CN115247026A - Sapphire polishing solution and preparation method thereof - Google Patents
Sapphire polishing solution and preparation method thereof Download PDFInfo
- Publication number
- CN115247026A CN115247026A CN202110890629.8A CN202110890629A CN115247026A CN 115247026 A CN115247026 A CN 115247026A CN 202110890629 A CN202110890629 A CN 202110890629A CN 115247026 A CN115247026 A CN 115247026A
- Authority
- CN
- China
- Prior art keywords
- polishing solution
- abrasive
- sapphire
- sapphire polishing
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a sapphire polishing solution and a preparation method thereof, wherein mechanical removal capacity is provided by virtue of high hardness of alumina abrasive particles, and auxiliary abrasives which react with alumina more softly are added in proper amounts for multiple times under proper KOH concentration, such as silicon oxide, cerium oxide and the like, so that chemical removal can be further enhanced without causing excessive consumption of the alumina abrasives, the effect of improving the overall removal rate in the polishing process is realized, and the service life of the sapphire polishing solution is prolonged.
Description
Technical Field
The invention relates to the technical field of sapphire processing technology, in particular to a sapphire polishing solution and a preparation method thereof.
Background
The sapphire integrates excellent optical, physical and chemical properties, has the same optical property, mechanical property, thermal property, electrical property and dielectric property as natural sapphire, has stable chemical property and corrosion resistance, and has Mohs hardness of 9 grade which is only second to the hardness of diamond. Sapphire itself has been widely used in the fields of national defense, scientific research, industry, etc. due to its excellent properties, and in many applications, sapphire has a small lattice constant mismatch with GaN, so that sapphire is one of the most important GaN thin film epitaxial substrates at present. Since GaN is known as the third generation semiconductor material, it has a wide application, but GaN is difficult to make bulk material, and it is necessary to grow GaN thin film on other substrate material. Sapphire has proven to be the most suitable substrate material for GaN growth in practice among many substrate materials. GaN thin films have been epitaxially grown on sapphire substrates, and GaN-based blue light emitting diodes and laser diodes have been developed.
To epitaxially grow high quality GaN thin films, the substrate material must be polished to obtain a clean surface that is flat, bright and lattice-complete. The quality of the substrate surface directly affects the quality of the epitaxial layer, the performance parameters of the device and the yield of the product. The sapphire substrate material used for manufacturing production must be polished to be applied to actual production. The polishing method of sapphire is generally mechanical, chemical and mechanochemical. The mechanical polishing is to polish a wafer by using a hard abrasive, but the Mohs hardness of sapphire is 9 which is second to that of diamond, so that the surface of the sapphire is difficult to polish by mechanical grinding, and the processing method by mechanical polishing causes low quality of the surface of the substrate and deep subsurface damage, thereby reducing the product performance and the processing yield; chemical polishing has a low polishing rate and the precision of the polished surface topography is reduced; the chemical mechanical polishing combines the advantages of mechanical polishing and chemical polishing, and obviously improves the polishing speed, the polishing precision and the surface damage. The above sapphire polishing methods have their respective characteristics, but the sapphire wafer having a deep scratch on the cut surface has a low polishing efficiency, a long time is required for obtaining a good surface quality, and the problems of corrosion pits, micro cracks on a sub-surface layer and the like are caused on the polished surface. These problems are very closely related to the polishing liquid used in the polishing process.
In the prior art (CN 102343547A), a single polishing abrasive silica sol is used as the polishing liquid, and the mohs hardness of the silica sol is lower than that of sapphire, so the mechanical grinding effect during polishing is reduced, and the efficiency of sapphire substrate polishing is not very high. In summary, although the conventional polishing methods and polishing solutions can reduce the surface roughness of the sapphire substrate material well and achieve good flatness, these polishing methods generally require several steps, and have complicated polishing processes and inconvenient operations. And the polishing solution adopts a single abrasive, so that scratches or subsurface cracks can be generated on the sapphire surface in the polishing process when the diamond with higher hardness is used as the abrasive, and the polishing rate is reduced when the silica sol with lower hardness is used, so that the whole processing efficiency is reduced.
Disclosure of Invention
The invention aims to provide a sapphire polishing solution and a preparation method thereof aiming at the technical analysis and problems, the method provides mechanical removal capacity by means of high hardness of alumina abrasive particles, and under the condition of proper KOH concentration, auxiliary abrasives (silicon oxide, cerium oxide and the like) which react with alumina more softly are added in proper amount for multiple times, so that the chemical removal can be further enhanced, the excessive consumption of the alumina abrasives is avoided, and the effect of improving the integral removal rate in the polishing process is realized.
The technical scheme of the invention is as follows:
the utility model provides a sapphire polishing solution, includes main abrasive, auxiliary abrasive, suspending agent, pH regulator and solvent, main abrasive is the alumina granule, auxiliary abrasive is an oxide, the oxide satisfies under the same temperature condition, and gibbs free energy that takes place chemical reaction with alumina is less than gibbs free energy that alumina and KOH take place the reaction.
In one embodiment of the present invention, the auxiliary abrasive is silicon oxide, cerium oxide, iron oxide or magnesium oxide.
In an embodiment of the present invention, the auxiliary abrasive is less than 0.5% by mass.
In another embodiment of the invention, the auxiliary abrasive is zinc oxide and silicon oxide, the mass percent of the zinc oxide is less than 0.5%, and the mass percent of the silicon oxide is less than 0.5%.
In an embodiment of the invention, the pH regulator is KOH, the pH of the polishing solution is 10 to 13, an alkaline processing environment is provided for the alumina polishing solution, and a basic chemical removal capability is provided for the polishing process.
In an embodiment of the present invention, the suspending agent is potassium salicylate, potassium nitrate, imidazoline, potassium stearate, polyalkylsiloxane, potassium acetate, amino acid, polyallyl potassium and organic colloid, and in order to achieve a better suspending effect of the suspending agent in an actual production process, an auxiliary agent may be further added, where the auxiliary agent includes: sodium silicate, propylene glycol methyl ether acetate, dodecyl alcohol ester, methyl acrylate, cross-linked sodium carboxymethyl cellulose and an emulsifier.
In an embodiment of the present invention, the solvent is deionized water.
In another aspect of the present invention, a method for preparing a sapphire polishing solution is provided, which comprises the following steps:
s1, adding a main abrasive, a suspending agent and a pH regulator into a solvent, and stirring to obtain a uniformly mixed liquid.
S2, adding auxiliary abrasive materials into the liquid in the S1 for multiple times at preset dosage at preset time intervals in the sapphire polishing process; the preset time is 0-2h, the preset dosage is that the mass percentage of the auxiliary abrasive is more than 4ppm, and the multiple times are more than 2 times in each polishing process.
And S3, repeating the step S2 until the polishing is finished.
The technical scheme of the invention comprises the following steps: in a conventional sapphire polishing solution, a main abrasive is usually single and generally is alumina particles, an alumina abrasive mainly relies on KOH to provide a chemical action, and the chemical reaction between KOH and alumina is too severe, so that not only is the chemical removal rate of sapphire improved, but also the severe chemical reaction occurs with the alumina abrasive, and thus the mechanical removal capability of the abrasive is rapidly reduced, and the service life of the polishing solution is influenced.
The technical scheme of the invention always keeps the concentration of KOH at a lower level, and ensures that the consumption of the grinding material is slower. In order to maintain a faster chemical removal capability, an oxide is required to be added as an auxiliary abrasive, the auxiliary abrasive can accelerate the chemical removal capability, the reaction of the auxiliary abrasive as a solid and the main abrasive is slowed, the chemical reaction is relatively gentle, and in addition, a small amount of adding manner for multiple times in the polishing process ensures that the added abrasive always exists and is maintained at a preset concentration, so that the problem of reduction of the removal rate caused by over-violent reaction of the polishing solution due to one-time addition of the auxiliary abrasive is solved.
In actual production, the addition amount of the auxiliary abrasive is slightly different according to parameters such as specific polishing speed, polishing temperature, polishing pressure, concentration of the main abrasive, the size of main abrasive particles, a surface treatment mode of the main abrasive particles and the like, and the addition amount of the auxiliary abrasive takes the effect that the removal rate of the auxiliary abrasive to a processed workpiece is greater than the effect that the mechanical removal capacity is reduced due to catalysis of the auxiliary abrasive to the main abrasive, so that the effect of improving the removal rate of the main abrasive is achieved.
In summary, the sapphire polishing solution and the preparation method thereof have the following beneficial effects:
1. the grain diameter D50 of the polishing solution product is less than 7um, the roughness of the surface of the polished sapphire substrate is less than 0.5nm, the surface of the substrate is smooth and free of defects, and the subsequent processing requirements of an epitaxial or patterned substrate can be fully met;
2. by the aid of chemical catalysis of the auxiliary abrasive, polishing efficiency is improved, service life of the polishing solution is prolonged, average polishing removal rate is improved by 15% -35%, and service life of the polishing solution is prolonged by 10% -50%.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
a sapphire polishing solution, wherein: 3 parts of main abrasive alumina particles, 1 part of sodium salicylate as a suspending agent, 3 parts of potassium nitrate, 2 parts of imidazoline, 4 parts of sodium stearate, 2 parts of polydimethylsiloxane, 3 parts of potassium acetate, 2 parts of methionine, 1 part of polyaluminum potassium and 1 part of organic colloid, wherein the solvent is 240 parts of deionized water in the embodiment, the main abrasive and the suspending agent are poured into the solvent, ground and stirred for 2.5 hours, heated for 1 hour by using a water bath with the temperature of 80 to 85 ℃, added with KOH after cooled to room temperature, and the pH value of the solution is adjusted to be within the range of 12 to 14. And then introducing the mixed liquid into a slurry barrel to start the polishing operation of the sapphire, and adding 1ppm of cerium oxide auxiliary abrasive at intervals of 15min to assist in improving the polishing efficiency in the operation process until the polishing operation is finished.
After the polishing solution product is polished, the roughness of the surface of the substrate is less than 0.5nm, the substrate is smooth and free of defects, and meanwhile, the polishing efficiency and the service life of the polishing solution are improved through the chemical catalysis effect of the auxiliary abrasive.
Example 2
A sapphire polishing solution, wherein:
the main grinding material liquid preparation method comprises the following steps: 3 parts of alumina particles, 1 part of sodium salicylate, 3 parts of potassium nitrate, 2 parts of imidazoline, 4 parts of sodium stearate, 2 parts of polydimethylsiloxane, 3 parts of potassium acetate, 2 parts of methionine, 1 part of polyaluminum potassium and 1 part of organic colloid. In order to achieve a better suspension effect of the suspending agent, an auxiliary agent may be further added, and the auxiliary agent in this embodiment comprises 1 part of sodium silicate, 3 parts of propylene glycol methyl ether acetate, 2 parts of dodecyl alcohol ester, 2 parts of methyl acrylate, 2 parts of croscarmellose sodium and 4 parts of an emulsifier. In the embodiment, the solvent is 240 parts of deionized water, the main abrasive, the suspending agent and the auxiliary agent are poured into the solvent, the mixture is ground and stirred for 2.5 hours, the mixture is heated for 1 hour by using a water bath with the temperature of 80-85 ℃, KOH is added after the mixture is cooled to the room temperature, and the pH value of the solution is adjusted to be within the range of 12-14.
The auxiliary grinding material liquid preparation method comprises the following steps: 1 part of cerium oxide particles, 1 part of sodium salicylate as a suspending agent, 3 parts of potassium nitrate, 2 parts of imidazoline, 4 parts of sodium stearate, 2 parts of polydimethylsiloxane, 3 parts of potassium acetate and 2 parts of methionine, and 4 parts of an auxiliary agent is added, wherein the auxiliary agent comprises the following components: 1 part of sodium silicate, 3 parts of propylene glycol methyl ether acetate, 2 parts of dodecyl alcohol ester, 2 parts of methyl acrylate, 2 parts of cross-linked sodium carboxymethyl cellulose and 4 parts of an emulsifier. In the embodiment, the solvent is 240 parts of deionized water, the mixture is ground and stirred for 2.5 hours, the mixture is heated for 1 hour by using a water bath with the temperature of 80 to 85 ℃, and the cerium oxide polishing solution can be obtained after the mixture is cooled to the room temperature.
In the polishing process, the auxiliary abrasive preparation liquid is slowly dripped into the main abrasive preparation liquid barrel in a dripping pumping mode until the polishing operation is completed in the current round, the roughness of the surface of the substrate of the polishing liquid product is less than 0.5nm after the polishing is completed, the polishing liquid product is smooth and free of defects, and meanwhile, the polishing efficiency and the service life of the polishing liquid are improved through the chemical catalysis of the auxiliary abrasive.
Example 3
A sapphire polishing solution, wherein: 3 parts of main abrasive alumina particles, 1 part of sodium salicylate, 3 parts of potassium nitrate, 2 parts of imidazoline, 4 parts of sodium stearate, 2 parts of polydimethylsiloxane, 3 parts of potassium acetate, 2 parts of methionine, 1 part of polyaluminum potassium and 1 part of organic colloid. In order to achieve a better suspension effect of the suspending agent, an auxiliary agent may be further added, and the auxiliary agent in this embodiment comprises 1 part of sodium silicate, 3 parts of propylene glycol methyl ether acetate, 2 parts of dodecyl alcohol ester, 2 parts of methyl acrylate, 2 parts of croscarmellose sodium and 4 parts of an emulsifier. In the embodiment, the solvent is 240 parts of deionized water, the main abrasive, the suspending agent and the auxiliary agent are poured into the solvent, the mixture is ground and stirred for 2.5 hours, the mixture is heated for 1 hour by using a water bath with the temperature of 80-85 ℃, KOH is added after the mixture is cooled to the room temperature, and the pH value of the solution is adjusted to be within the range of 12-14.
And then introducing the mixed liquid into a slurry barrel to start the polishing operation of the sapphire, and adding 1ppm of iron oxide auxiliary abrasive at intervals of 15min to assist in improving the polishing efficiency in the operation process until the polishing operation is finished. After the polishing solution product is polished, the roughness of the surface of the substrate is less than 0.5nm, the substrate is smooth and free of defects, and meanwhile, the polishing efficiency and the service life of the polishing solution are improved through the chemical catalysis effect of the auxiliary abrasive.
Example 4
A sapphire polishing solution, wherein: 3 parts of main abrasive alumina particles, 1 part of sodium salicylate as a suspending agent, 3 parts of potassium nitrate, 2 parts of imidazoline, 4 parts of sodium stearate, 2 parts of polydimethylsiloxane, 3 parts of potassium acetate, 2 parts of methionine, 1 part of polyaluminum potassium and 1 part of organic colloid. In order to achieve a better suspension effect of the suspending agent, an auxiliary agent may be further added, and the auxiliary agent in this embodiment comprises 1 part of sodium silicate, 3 parts of propylene glycol methyl ether acetate, 2 parts of dodecyl alcohol ester, 2 parts of methyl acrylate, 2 parts of croscarmellose sodium and 4 parts of an emulsifier. In the embodiment, the solvent is 240 parts of deionized water, the main abrasive, the suspending agent and the auxiliary agent are poured into the solvent, the mixture is ground and stirred for 2.5 hours, the mixture is heated for 1 hour by using a water bath with the temperature of 80-85 ℃, KOH is added after the mixture is cooled to the room temperature, and the pH value of the solution is adjusted to be within the range of 12-14.
And then introducing the mixed liquid into a slurry barrel to start the polishing operation of the sapphire, and adding 1ppm of magnesium oxide auxiliary abrasive at intervals of 15min to assist in improving the polishing efficiency in the operation process until the polishing operation is finished. After the polishing solution product is polished, the roughness of the surface of the substrate is less than 0.5nm, the substrate is smooth and free of defects, and meanwhile, the polishing efficiency and the service life of the polishing solution are improved through the chemical catalysis effect of the auxiliary abrasive.
Claims (11)
1. The sapphire polishing solution is characterized by comprising a main abrasive, an auxiliary abrasive, a suspending agent, a pH regulator and a solvent, wherein the main abrasive is alumina particles, the auxiliary abrasive is an oxide, and the gibbs free energy of the oxide, which is chemically reacted with alumina, is less than that of the alumina and KOH under the same temperature condition.
2. The sapphire polishing solution according to claim 1, wherein the auxiliary abrasive is silicon oxide, cerium oxide, iron oxide or magnesium oxide.
3. The sapphire polishing solution according to claim 1, wherein the auxiliary abrasive is zinc oxide or silicon oxide.
4. The sapphire polishing solution as set forth in claim 1, wherein the main abrasive is greater than 1% by mass.
5. The sapphire polishing solution as set forth in claim 2, wherein the auxiliary abrasive is less than 0.5% by mass.
6. The sapphire polishing solution according to claim 3, wherein the mass percent of zinc oxide is less than 0.5%, and the mass percent of silicon oxide is less than 0.5%.
7. The sapphire polishing solution of claim 1, wherein the pH adjusting agent is KOH.
8. The sapphire polishing solution as claimed in claim 1, wherein the pH value of the polishing solution is 10 to 13.
9. The sapphire polishing solution according to claim 1, wherein the suspending agent is potassium salicylate, potassium nitrate, imidazoline, potassium stearate, polyalkylsiloxane, potassium acetate, amino acid, polyallyl potassium, or an organic colloid.
10. The sapphire polishing solution as set forth in claim 1, wherein the solvent is deionized water.
11. The sapphire polishing solution as set forth in any one of claims 1 to 10, wherein the preparation method comprises the following steps:
s1, adding a main grinding material, a suspending agent and a PH regulator into a solvent, and stirring to obtain uniformly mixed liquid;
s2, adding auxiliary abrasive materials into the liquid in the S1 for multiple times at preset dosage at preset time intervals in the sapphire polishing process; the preset time is 0 to 2h, the preset dosage is that the mass percentage of the auxiliary abrasive is more than 4ppm, and the times are more than 2 times in each polishing process;
and S3, repeating the step S2 until the polishing is finished.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110456034 | 2021-04-26 | ||
| CN2021104560341 | 2021-04-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115247026A true CN115247026A (en) | 2022-10-28 |
Family
ID=83696576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110890629.8A Pending CN115247026A (en) | 2021-04-26 | 2021-08-04 | Sapphire polishing solution and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115247026A (en) |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US6117220A (en) * | 1998-11-17 | 2000-09-12 | Fujimi Incorporated | Polishing composition and rinsing composition |
| US6440187B1 (en) * | 1998-01-08 | 2002-08-27 | Nissan Chemical Industries, Ltd. | Alumina powder, process for producing the same and polishing composition |
| US20040092103A1 (en) * | 2000-07-19 | 2004-05-13 | Shigeo Fujii | Polishing fluid composition |
| WO2008011796A1 (en) * | 2006-07-21 | 2008-01-31 | Anji Microelectronics (Shanghai) Co., Ltd | Polishing slurry for low dielectric material |
| JP2009297818A (en) * | 2008-06-11 | 2009-12-24 | Yamaguchi Seiken Kogyo Kk | Polishing solution composition for sapphire substrate and method of polishing sapphire substrate |
| CN102343547A (en) * | 2011-10-20 | 2012-02-08 | 天津理工大学 | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution |
| US20130037515A1 (en) * | 2010-04-28 | 2013-02-14 | Baikowski Japan Co., Ltd. | Sapphire polishing slurry and sapphire polishing method |
| US20140051250A1 (en) * | 2011-01-25 | 2014-02-20 | Hitachi Chemical Company, Ltd. | Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material |
| CN103881586A (en) * | 2014-04-18 | 2014-06-25 | 苏州纳迪微电子有限公司 | Preparation method of sapphire polishing solution |
| US20140308879A1 (en) * | 2011-12-27 | 2014-10-16 | Asahi Glass Company, Limited | Additive for polishing agent, and polishing method |
| CN104130714A (en) * | 2014-07-01 | 2014-11-05 | 蚌埠市高华电子有限公司 | Abrasive-containing mixed polishing solution for metals and preparation method thereof |
| US20150315442A1 (en) * | 2012-12-28 | 2015-11-05 | Albemarle Europe Sprl | Production Method of a Novel Polishing Alumina |
| US20160221146A1 (en) * | 2013-09-25 | 2016-08-04 | 3M Innovative Properties Company | Composite ceramic abrasive polishing solution |
| CN106700943A (en) * | 2016-11-22 | 2017-05-24 | 启东市惠鹤蔬果农地股份专业合作社 | Sapphire polishing solution |
| JP2017190363A (en) * | 2016-04-11 | 2017-10-19 | 花王株式会社 | Polishing liquid composition for sapphire plate |
| CN107955545A (en) * | 2017-12-21 | 2018-04-24 | 山东银丰纳米新材料有限公司 | A kind of A is to sapphire polishing agent and preparation method thereof |
| US20180258319A1 (en) * | 2015-09-09 | 2018-09-13 | Hitachi Chemical Company, Ltd. | Polishing liquid, polishing liquid set, and substrate polishing method |
| CN110669439A (en) * | 2019-09-12 | 2020-01-10 | 江苏吉星新材料有限公司 | Coarse grinding fluid for sapphire grinding |
| US20200032106A1 (en) * | 2017-03-27 | 2020-01-30 | Hitachi Chemical Company, Ltd. | Polishing liquid, polishing liquid set, and polishing method |
-
2021
- 2021-08-04 CN CN202110890629.8A patent/CN115247026A/en active Pending
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US6440187B1 (en) * | 1998-01-08 | 2002-08-27 | Nissan Chemical Industries, Ltd. | Alumina powder, process for producing the same and polishing composition |
| US6117220A (en) * | 1998-11-17 | 2000-09-12 | Fujimi Incorporated | Polishing composition and rinsing composition |
| US20040092103A1 (en) * | 2000-07-19 | 2004-05-13 | Shigeo Fujii | Polishing fluid composition |
| WO2008011796A1 (en) * | 2006-07-21 | 2008-01-31 | Anji Microelectronics (Shanghai) Co., Ltd | Polishing slurry for low dielectric material |
| JP2009297818A (en) * | 2008-06-11 | 2009-12-24 | Yamaguchi Seiken Kogyo Kk | Polishing solution composition for sapphire substrate and method of polishing sapphire substrate |
| US20130037515A1 (en) * | 2010-04-28 | 2013-02-14 | Baikowski Japan Co., Ltd. | Sapphire polishing slurry and sapphire polishing method |
| US20140051250A1 (en) * | 2011-01-25 | 2014-02-20 | Hitachi Chemical Company, Ltd. | Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material |
| CN102343547A (en) * | 2011-10-20 | 2012-02-08 | 天津理工大学 | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution |
| US20140308879A1 (en) * | 2011-12-27 | 2014-10-16 | Asahi Glass Company, Limited | Additive for polishing agent, and polishing method |
| US20150315442A1 (en) * | 2012-12-28 | 2015-11-05 | Albemarle Europe Sprl | Production Method of a Novel Polishing Alumina |
| US20160221146A1 (en) * | 2013-09-25 | 2016-08-04 | 3M Innovative Properties Company | Composite ceramic abrasive polishing solution |
| CN103881586A (en) * | 2014-04-18 | 2014-06-25 | 苏州纳迪微电子有限公司 | Preparation method of sapphire polishing solution |
| CN104130714A (en) * | 2014-07-01 | 2014-11-05 | 蚌埠市高华电子有限公司 | Abrasive-containing mixed polishing solution for metals and preparation method thereof |
| US20180258319A1 (en) * | 2015-09-09 | 2018-09-13 | Hitachi Chemical Company, Ltd. | Polishing liquid, polishing liquid set, and substrate polishing method |
| JP2017190363A (en) * | 2016-04-11 | 2017-10-19 | 花王株式会社 | Polishing liquid composition for sapphire plate |
| CN106700943A (en) * | 2016-11-22 | 2017-05-24 | 启东市惠鹤蔬果农地股份专业合作社 | Sapphire polishing solution |
| US20200032106A1 (en) * | 2017-03-27 | 2020-01-30 | Hitachi Chemical Company, Ltd. | Polishing liquid, polishing liquid set, and polishing method |
| CN107955545A (en) * | 2017-12-21 | 2018-04-24 | 山东银丰纳米新材料有限公司 | A kind of A is to sapphire polishing agent and preparation method thereof |
| CN110669439A (en) * | 2019-09-12 | 2020-01-10 | 江苏吉星新材料有限公司 | Coarse grinding fluid for sapphire grinding |
Non-Patent Citations (1)
| Title |
|---|
| 卓志国;周海;徐晓明;臧跃;: "LED用蓝宝石衬底抛光技术进展" * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100465356C (en) | GaN wafer with high surface quality and production method thereof | |
| JP3810588B2 (en) | Polishing composition | |
| KR100628019B1 (en) | Edge polishing composition | |
| WO2019119816A1 (en) | Cmp polishing solution, preparation method therefor and application thereof | |
| US20060288929A1 (en) | Polar surface preparation of nitride substrates | |
| WO2009111001A2 (en) | Silicon carbide polishing method utilizing water-soluble oxidizers | |
| CN110076682A (en) | A kind of Sapphire Substrate cmp method | |
| CN105313234A (en) | Processing method for double-sided polished sapphire wafers | |
| KR20150024275A (en) | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same | |
| JP2021503170A (en) | Single crystal silicon carbide substrate with high flatness and low damage and large diameter and its manufacturing method | |
| JP2004203638A (en) | Peanut-like twin colloidal silica particles and method for producing the same | |
| KR100567962B1 (en) | Polishing composition and surface treating composition | |
| CN115247026A (en) | Sapphire polishing solution and preparation method thereof | |
| JPWO2019043890A1 (en) | Method for manufacturing semiconductor wafer | |
| CN113621375B (en) | Quartz wafer etching additive and preparation method thereof | |
| WO2019207926A1 (en) | Polishing agent for synthetic quartz glass substrates, method for producing same, and method for polishing synthetic quartz glass substrate | |
| CN101407429B (en) | High-precision planarization method for lithium aluminate crystal material | |
| CN107541145B (en) | Green environment-friendly polishing silica sol and preparation method thereof | |
| CN114525108A (en) | Silica sol active abrasive particles for chemical mechanical polishing and preparation method thereof | |
| CN115723027B (en) | A processing technology for subsurface damage-free gallium nitride wafer | |
| CN113462491A (en) | Chemical mechanical polishing cleaning solution and use method thereof | |
| JP2013201176A (en) | Polishing slurry and method for manufacturing group 13 nitride substrate | |
| CN108007982B (en) | Method for prolonging service life of A-surface sapphire window polishing solution | |
| CN113652200B (en) | Self-assembled nano silicon dioxide abrasive, polishing solution containing abrasive and application | |
| CN113755099B (en) | Sapphire chemical mechanical polishing solution and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20221028 |