CN115225054A - Elastic wave device and module including the same - Google Patents
Elastic wave device and module including the same Download PDFInfo
- Publication number
- CN115225054A CN115225054A CN202111345135.8A CN202111345135A CN115225054A CN 115225054 A CN115225054 A CN 115225054A CN 202111345135 A CN202111345135 A CN 202111345135A CN 115225054 A CN115225054 A CN 115225054A
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- Prior art keywords
- heat dissipation
- wave device
- elastic wave
- pattern
- dissipation pattern
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000007789 sealing Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011029 spinel Substances 0.000 claims description 5
- 229910052596 spinel Inorganic materials 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
An elastic wave device includes a wiring substrate, a first heat dissipation pattern formed on the wiring substrate, a base joined to the wiring substrate via a plurality of bumps, a plurality of series resonators formed on the base, and a wiring pattern formed on the base and electrically connected to the series resonators and including a plurality of bump pads, the bump pads including heat dissipation bump pads, the heat dissipation bump pads being joined to the first heat dissipation pattern via the bumps. Therefore, the elastic wave device capable of improving the heat dissipation performance and the module comprising the elastic wave device are provided.
Description
Technical Field
The present disclosure relates to an elastic wave device and a module including the elastic wave device.
Background
Patent document 1 (japanese patent laid-open publication No. 2017-157922) exemplifies an elastic wave device. The elastic wave device dissipates heat through heat dissipation paths such as through holes.
However, the heat capacity of the heat dissipation path of the elastic wave device described in patent document 1 is not sufficient. Therefore, there is not sufficient heat dissipation.
Disclosure of Invention
The present disclosure is directed to solving the above problems, and an object of the present disclosure is to provide an acoustic wave device capable of improving heat dissipation, and a module including the acoustic wave device.
[ means for solving the problems ]
The elastic wave device of the present disclosure includes a wiring substrate, a first heat dissipation pattern formed on the wiring substrate, a base joined to the wiring substrate by a plurality of bumps, a plurality of series resonators formed on the base, and a wiring pattern formed on the base, electrically connected to the series resonators, and including a plurality of bump pads, the bump pads including heat dissipation bump pads, the heat dissipation bump pads being joined to the first heat dissipation pattern through the bumps.
In one aspect of the present disclosure, the first heat dissipation pattern is formed of a metal.
In one aspect of the present disclosure, the first heat dissipation pattern is not grounded.
In one aspect of the present disclosure, the first heat dissipation pattern is not directly connected to a wiring pattern through which an electric signal passes.
In one aspect of the present invention, the first heat dissipation pattern is not bonded to a metal other than the bump.
In one aspect of the present invention, the wiring substrate has a heat dissipating through hole and a second heat dissipating pattern, and the first heat dissipating pattern is joined to the second heat dissipating pattern through the heat dissipating through hole.
In one aspect of the present disclosure, the elastic wave device further includes a sealing portion that seals the base together with the wiring substrate, and the sealing portion is joined to the first heat dissipation pattern.
In one aspect of the present disclosure, at least a part of a region where the first heat dissipation pattern is joined to the sealing portion is roughened.
In one aspect of the present disclosure, the substrate is a substrate formed of lithium tantalate, lithium niobate, crystal, or piezoelectric ceramic.
In one aspect of the present disclosure, the substrate is bonded to a support substrate made of sapphire, silicon, alumina, spinel, crystal, or glass.
In one aspect of the present disclosure, the elastic wave device further includes a ladder filter having a plurality of parallel resonators.
In one aspect of the present disclosure, a module including the elastic wave device is provided.
The invention has the beneficial effects that: according to the present disclosure, an acoustic wave device capable of improving heat dissipation and a module including the acoustic wave device can be provided.
Drawings
Fig. 1 is a schematic view of an elastic wave device of a first embodiment.
Fig. 2 is an oblique view and a partially enlarged view of the elastic wave device of the first embodiment.
Fig. 3 is a plan view of the elastic wave device of the first embodiment.
Fig. 4 is a schematic view of an elastic wave assembly of the elastic wave device of the first embodiment.
Fig. 5 is a schematic view of the elastic wave device of the first embodiment in which the elastic wave component is an acoustic thin film resonator.
Fig. 6 is a schematic diagram of a module to which the elastic wave device is applied according to a second embodiment.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that like or similar parts are designated with the same reference numerals throughout the figures. The similar or identical parts will be simplified or omitted from the repetitive description.
(first embodiment)
Fig. 1 is a cross-sectional view of an elastic wave device 1 according to a first embodiment. Fig. 2 is a perspective view of elastic wave device 1 according to the first embodiment.
Fig. 1 and 2 are examples of elastic wave device 1 as a duplexer.
As shown in fig. 1, elastic wave device 1 includes wiring substrate 3, first heat dissipation pattern 6, a plurality of bumps 15, device chip 5, and sealing portion 17.
The wiring substrate 3 is, for example, a multilayer substrate made of resin. The wiring substrate 3 is, for example, a Low Temperature Co-fired ceramic (LTCC) multilayer substrate formed of a plurality of dielectric layers.
The first heat dissipation pattern 6 is formed on the wiring substrate 3. For example, the first heat dissipation pattern 6 is formed of metal.
The bump 15 is electrically connected to the wiring substrate 3. For example, the bumps 15 are gold bumps. For example, the height of the bump 15 is 20 μm to 50 μm. The bumps 15 are electrically connected to the wiring pattern of the main surface 5a of the device chip 5.
The device chip 5 is bonded to the wiring substrate 3 through the bump 15.
The device chip 5 is a base body formed of a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz, for example. The device chip 5 is a base body formed of piezoelectric ceramics, for example. For example, the device chip 5 is a base body formed by bonding a piezoelectric substrate and a support substrate. For example, the support substrate is a matrix formed of sapphire, silicon, alumina, spinel, crystal, or glass.
The device chip 5 is a base body forming a functional component. For example, a receiving filter and a transmitting filter are formed on the main surface 5a of the device chip 5 (the lower surface of the device chip 5 in fig. 1).
The receiving filter is capable of passing an electrical signal of a desired frequency band. For example, the reception filter is provided with a ladder filter formed of a plurality of series resonators and a plurality of parallel resonators.
The transmission filter passes an electric signal of a desired frequency band. For example, the transmission filter is provided with a ladder filter formed of a plurality of series resonators and a plurality of parallel resonators.
The sealing portion 17 covers the device chip 5 and seals the device chip 5 together with the wiring substrate 3. The sealing portion 17 is formed of an insulator such as a synthetic resin, for example. The seal portion 17 is formed of metal, for example. For example, the sealing portion 17 is formed of a resin layer and a metal layer.
In the case where the sealing portion 17 is formed of a synthetic resin, an epoxy resin, a polyimide, or the like may be used as the synthetic resin. Preferably, the sealing portion 17 is formed of an epoxy resin by a low-temperature hardening process.
The sealing portion 17 is joined to the first heat dissipation pattern 6.
Next, the structure of the elastic wave device 1 will be described with reference to fig. 3.
Fig. 3 is a plan view of elastic wave device 1 of the first embodiment.
As shown in fig. 3, a plurality of elastic wave modules 52 and wiring patterns 54 are formed on the main surface 5a of the device chip 5.
The series resonators S1, S2, S3, S4, S5 and the parallel resonators P1, P2, P3, P4 are formed in such a manner as to obtain the function of a transmission filter. The other series resonators and the other parallel resonators are formed in such a manner as to obtain the function of the reception filter.
For example, the wiring pattern 54 may be formed of an appropriate metal or alloy of silver, aluminum, copper, titanium, palladium, or the like. For example, the wiring pattern 54 has a multilayer metal structure in which a plurality of metal layers are stacked. For example, the wiring pattern 54 has a thickness of 1500nm to 4500nm.
The wiring pattern 54 includes an antenna pad ANT, a transmission pad Tx, a reception pad Rx, four ground pads GND, and a heat dissipation bump pad HR. The wiring pattern 54 is electrically connected to the elastic wave element 52.
In the present disclosure, the heat dissipation bump pad HR is not grounded. The heat dissipation bump pads HR are provided at positions corresponding to the first heat dissipation patterns 6. The heat dissipation bump pad HR is bonded to the first heat dissipation pattern 6 via the bump 15.
Although not shown in the drawings, the first heat dissipation pattern 6 is not grounded. The first heat dissipation pattern 6 is not directly connected to the wiring pattern 54 through which an electric signal passes. The first heat dissipation pattern 6 is not bonded to the metal other than the bump 15. At least a part of the region where the first heat dissipation pattern 6 is joined to the sealing portion 17 is roughened.
Next, an example of the elastic wave element 52 will be described with reference to fig. 4.
Fig. 4 is a schematic view of elastic wave assembly 52 of elastic wave device 1 according to the first embodiment.
As shown in fig. 4, an IDT (inter driver) 52a and a pair of reflectors 52b are formed on the main surface 5a of the device chip 5. The IDT52a and the reflectors 52b are provided so as to excite a surface acoustic wave.
For example, the IDT52a and the reflectors 52b are formed of an alloy of aluminum and copper. For example, the IDT52a and the reflectors 52b are formed of a suitable metal such as titanium, palladium, or silver, or an alloy thereof. For example, the IDT52a and the reflectors 52b may have a multilayer metal structure in which a plurality of metal layers are laminated. For example, the IDT52a and the reflectors 52b have a thickness of 150nm to 400nm.
The IDT52a has a pair of comb electrodes 52c. The comb electrodes 52c are opposed to each other. The comb electrodes 52c each have a plurality of electrode fingers 52d and bus bars 52e. The electrode fingers 52d extend in the longitudinal direction. The bus bar 52e connects the electrode fingers 52d.
One of the reflectors 52b is adjacent to one of the sides of the IDT52 a. The other of the reflectors 52b is adjacent to the other side of the IDT52 a.
Next, an example in which the acoustic wave device 52 is an acoustic thin film resonator will be described with reference to fig. 5. Fig. 5 is a schematic diagram of acoustic wave device 1 according to the first embodiment in which elastic wave module 52 is an acoustic thin film resonator.
In fig. 5, the chip substrate 60 has the function of the device chip 5. The chip substrate 60 is, for example, a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass.
A piezoelectric film 62 is disposed on the chip substrate 60. The piezoelectric film 62 is made of, for example, aluminum nitride.
The lower electrode 64 and the upper electrode 66 sandwich the piezoelectric film 62 therebetween. For example, the lower electrode 64 and the upper electrode 66 are made of metal such as ruthenium.
A gap 68 is formed between the lower electrode 64 and the chip substrate 60.
In the acoustic thin film resonator, the lower electrode 64 and the upper electrode 66 excite an elastic wave in a thickness longitudinal vibration mode in the piezoelectric film 62.
According to the first embodiment described above, the heat dissipation bump pads HR are joined to the first heat dissipation patterns 6 through the bumps 15. Therefore, the heat dissipation performance of acoustic wave device 1 can be improved. Therefore, the electric resistance of the acoustic wave device 1 can be improved.
The first heat dissipation pattern 6 is made of metal. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
Further, the first heat dissipation pattern 6 is not grounded. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
The first heat dissipation pattern 6 is not directly connected to the wiring pattern 54 through which an electric signal passes. Therefore, the heat dissipation performance of the acoustic wave device 1 can be reliably improved.
Further, the first heat dissipation pattern 6 is not bonded to the metal other than the bump 15. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
The wiring board 3 further includes a heat dissipating through hole and a second heat dissipating pattern (not shown), and the first heat dissipating pattern 6 can be joined to the second heat dissipating pattern through the heat dissipating through hole. In this case, the heat dissipation performance of acoustic wave device 1 can be improved reliably.
Further, the sealing portion 17 is joined to the first heat dissipation pattern 6. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
At least a part of the region where the first heat dissipation pattern 6 is joined to the sealing portion 17 is roughened. Therefore, the heat dissipation performance of the acoustic wave device 1 can be reliably improved.
Further, the device chip 5 is a substrate formed of lithium tantalate, lithium niobate, crystal, or piezoelectric ceramics. Therefore, the heat dissipation performance of the acoustic wave device 1 can be reliably improved.
The device chip 5 is bonded to a support base made of sapphire, silicon, alumina, spinel, crystal, or glass. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
Further, elastic wave device 1 includes a ladder filter further including a plurality of parallel resonators. Therefore, the heat dissipation of elastic wave device 1 including the ladder filter can be reliably improved.
(second embodiment)
Fig. 6 is a sectional view of a module 100 using the elastic wave device 1 of the second embodiment. Note that portions similar or identical to those of the first embodiment are given the same reference numerals. The description of the similar or identical parts will be omitted.
In fig. 6, module 100 includes wiring board 130, integrated circuit module IC, acoustic wave device 1, inductor 111, and sealing portion 117.
The wiring substrate 130 is the same as the wiring substrate 3 in the first embodiment.
Although not shown in the drawings, the integrated circuit assembly IC is mounted inside the wiring substrate 130. The integrated circuit assembly IC comprises a switching circuit and a low noise amplifier.
The acoustic wave device 1 is mounted on a main surface of the wiring board 130.
The inductor 111 is mounted on a main surface of the wiring substrate 130. The inductor 111 is installed for impedance matching. For example, the inductor 111 is an Integrated Passive Device (IPD).
The sealing portion 117 seals a plurality of electronic components including the acoustic wave device 1.
According to the second embodiment described above, the module 100 includes the elastic wave device 1. Therefore, the heat dissipation of the module 100 can be improved. As a result, the power durability of the module 100 can be improved.
While at least one embodiment has been described above, it is to be understood that various changes, modifications or improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of the invention.
It is to be understood that the aspects of the method or apparatus described herein are not limited in their application to the details of construction and the arrangements of the components set forth in the above description or illustrated in the drawings. The methods and apparatus may be practiced in other embodiments or with other embodiments.
The examples are given by way of illustration only and not by way of limitation.
The description or words used in this disclosure are words of description rather than limitation. The use of "including," "comprising," "having," "containing," and variations thereof herein, is meant to encompass the items listed thereafter and equivalents thereof as well as additional items.
The use of the term "or any other term in the description using the term" or "may be interpreted to mean one, more than one, or all of the recited term.
Front, back, left, right, top, bottom, up, down, and horizontal and vertical references are for convenience of description and do not limit the position and spatial configuration of any of the components of the present invention. Accordingly, the foregoing description and drawings are by way of example only.
Claims (12)
1. An elastic wave device characterized by: the elastic wave device includes a wiring board, a first heat dissipation pattern formed on the wiring board, a base joined to the wiring board by a plurality of bumps, a plurality of series resonators formed on the base, and a wiring pattern formed on the base, electrically connected to the series resonators, and including a plurality of bump pads, the bump pads including heat dissipation bump pads, the heat dissipation bump pads being joined to the first heat dissipation pattern by the bumps.
2. The elastic wave device according to claim 1, wherein: the first heat dissipation pattern is formed of a metal.
3. The elastic wave device according to claim 1, wherein: the first heat dissipation pattern is not grounded.
4. The elastic wave device according to claim 1, wherein: the first heat dissipation pattern is not directly connected to a wiring pattern through which an electric signal passes.
5. The elastic wave device according to claim 1, wherein: the first heat dissipation pattern is not bonded to the metal other than the bump.
6. The elastic wave device according to claim 1, wherein: the wiring substrate has a heat dissipation through-hole and a second heat dissipation pattern, and the first heat dissipation pattern is joined to the second heat dissipation pattern through the heat dissipation through-hole.
7. The elastic wave device according to claim 1, wherein: the elastic wave device further includes a sealing portion that seals the base together with the wiring substrate, and the sealing portion is bonded to the first heat dissipation pattern.
8. The elastic wave device according to claim 1, wherein: at least a part of a region where the first heat dissipation pattern is joined to the sealing portion is roughened.
9. The elastic wave device according to claim 1, wherein: the substrate is formed by lithium tantalate, lithium niobate, crystal or piezoelectric ceramics.
10. The elastic wave device according to claim 1, wherein: the substrate is bonded to a supporting substrate formed of sapphire, silicon, alumina, spinel, crystal, or glass.
11. The elastic wave device according to claim 1, wherein: the elastic wave device further includes a ladder filter having a plurality of parallel resonators.
12. A module comprising the elastic wave device according to any one of claims 1 to 11.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-070677 | 2021-04-19 | ||
| JP2021070677A JP7282343B2 (en) | 2021-04-19 | 2021-04-19 | Acoustic wave device and module comprising the acoustic wave device |
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| Publication Number | Publication Date |
|---|---|
| CN115225054A true CN115225054A (en) | 2022-10-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111345135.8A Pending CN115225054A (en) | 2021-04-19 | 2021-11-15 | Elastic wave device and module including the same |
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| Country | Link |
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| JP (2) | JP7282343B2 (en) |
| CN (1) | CN115225054A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024116986A1 (en) * | 2022-11-28 | 2024-06-06 | 京セラ株式会社 | Elastic wave device and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3886033B2 (en) | 2001-09-25 | 2007-02-28 | Ｔｄｋ株式会社 | Surface acoustic wave device |
| JP4758197B2 (en) | 2005-10-24 | 2011-08-24 | 京セラ株式会社 | Surface acoustic wave device and communication device |
| JP2013131711A (en) | 2011-12-22 | 2013-07-04 | Taiyo Yuden Co Ltd | Electronic component |
| JP6106404B2 (en) | 2012-10-30 | 2017-03-29 | 太陽誘電株式会社 | Electronic component module |
| JP6170349B2 (en) | 2013-06-18 | 2017-07-26 | 太陽誘電株式会社 | Elastic wave device |
| CN105409121B (en) | 2013-08-02 | 2017-10-17 | 株式会社村田制作所 | Wave splitter device |
| JP7117828B2 (en) | 2017-06-13 | 2022-08-15 | 太陽誘電株式会社 | elastic wave device |
| JP7426196B2 (en) | 2019-03-15 | 2024-02-01 | 太陽誘電株式会社 | Acoustic wave devices and their manufacturing methods, filters and multiplexers |
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2021
- 2021-04-19 JP JP2021070677A patent/JP7282343B2/en active Active
- 2021-11-15 CN CN202111345135.8A patent/CN115225054A/en active Pending
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| Publication number | Publication date |
|---|---|
| JP2022165332A (en) | 2022-10-31 |
| JP2023067933A (en) | 2023-05-16 |
| JP7282343B2 (en) | 2023-05-29 |
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