CN115181935A - Processing technology, equipment and fastener of film sensor based on metal substrate - Google Patents

Abstract

The invention belongs to the technical field of thin film sensors, and in particular relates to a processing technology, equipment and fasteners of a thin film sensor based on a metal substrate, comprising the following steps: Step 1: forming a piezoelectric layer and insulating protection layer by layer on the end face of the metal substrate layer; step 2: setting a ring-shaped mask on the surface of the insulating protective layer; step 3: preparing molten metal, and immersing the surface to be welded in the molten metal with the metal substrate facing the surface to be welded; step 4: The metal base is taken out from the molten metal, the metal brazing filler metal used for preparing the electrode layer is placed on the surface to be welded, the metal brazing filler metal is heated to a molten state and kept for a set time, and then cooled so that the surface to be welded is cooled. The electrode layer is formed to obtain a thin film sensor. The processing technology of the invention solves the problems of poor reliability and low processing efficiency of the outer electrode of the thin film sensor.

Description

A processing technology, equipment and fastener for thin film sensor based on metal substrate

technical field

The invention belongs to the technical field of thin film sensors, and in particular relates to a processing technology, equipment and fasteners of a thin film sensor based on a metal substrate.

Background technique

With the development of the country and the advancement of science and technology, there are more and more large-scale infrastructure constructions and faster and faster. Fasteners are widely used in high-speed rail, ships, heavy industry, petrochemicals, aviation, wind power and amusement facilities as the rice of industry. At the same time, fasteners face various environmental influences. Once the fasteners reach a certain level, they are prone to deformation and loosening. If the loose fasteners in key parts are not found in time, it will lead to structural failure at light, and catastrophic consequences at worst. The traditional measurement methods include torque wrench method, resistance strain gauge method, photomechanical method and magnetoresistance method. At present, technical products with pre-tightening force indication on the market include bolts with color-changing liquid pockets, with detection rotors, with detection rings, pointer detection rings, detection pins and detection pads. In response to the current needs, we have independently developed the in-situ growth technology of ultrasonic transducer sensors based on thin-film piezoelectric materials, and completed trial production on various substrate materials such as high-strength steel and titanium alloys, as well as various fasteners. However, the thin film electrodes grown in situ based on physical vapor deposition have low density, low work efficiency, long time and high cost.

In order to solve the problem of insufficient monitoring of bolt pre-tightening force in key parts of key structures during railway operation, the patent application published in China with the number CN105258836A adopts intelligent bolts installed with piezoelectric ceramic devices to detect the pre-tightening force. However, the piezoelectric ceramic device and the bolt are pasted by couplant glue, which does not have high firmness and reliability. Therefore, there are major problems in the service life of the product technology and the adaptation to the environment.

The Chinese Patent Application Publication No. CN206234223U proposes a special fastener device to solve the problem that the bolts that are necessary for fixing many large-scale equipment such as fan bases and elevated iron towers may loosen and cause serious accidents to occur in large-scale equipment. The piezoelectric sensing module with the piezoelectric ceramic sheet and the piezoelectric crystal sheet as the core is fixed on the exposed end of the bolt, and the bolt load is measured by the acoustic signal. This technology also has the problem of unreliable connection between the core piezoelectric component and the bolt, which affects the consistency of the signal on the one hand, and the overall service environment and life on the other hand.

None of the above thin film sensor manufacturing methods solves the problems of low reliability and low processing efficiency of the outer electrode in the thin film sensor

The present invention has been made in view of this.

SUMMARY OF THE INVENTION

The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a processing technology, equipment and fasteners for a thin film sensor based on a metal substrate, which are used to solve the problems of poor reliability and low processing efficiency of the outer electrode of the thin film sensor. question.

In order to solve the above technical problems, the first aspect of the present invention proposes a processing technology of a thin film sensor based on a metal substrate, which includes the following steps:

Step 1: forming a piezoelectric layer and an insulating protective layer layer by layer on the end face of the metal substrate;

Step 2: an annular mask is arranged on the surface of the insulating protective layer, and the insulating protective layer located in the annular mask and the insulating protective layer located outside the annular mask form a surface to be soldered;

Step 3: preparing molten metal, and immersing the surface to be welded into the molten metal with the surface of the metal substrate facing the molten metal;

Step 4: take out the metal base from the molten metal, place the metal brazing filler metal used for preparing the electrode layer on the surface to be welded, heat the metal brazing filler metal to a molten state, and keep the temperature for a set time, Then, it is cooled to form an electrode layer on the to-be-welded surface to obtain the thin film sensor.

A second aspect of the present invention provides a processing technique for a thin film sensor based on a metal substrate, the processing technique comprising the following steps:

Step 1: forming a piezoelectric layer, an insulating protective layer and a transition layer layer by layer on the end face of the metal substrate;

Step 2: an annular mask is arranged on the surface of the transition layer, and the transition layer located in the annular mask and the transition layer located outside the annular mask form a surface to be welded;

Step 3: preparing molten metal, and immersing the surface to be welded in the molten metal with the surface of the metal substrate facing the molten metal;

Step 4: take out the metal base from the molten metal, place the metal brazing filler metal used for preparing the electrode layer on the surface to be welded, heat the metal brazing filler metal to a molten state, and keep the temperature for a set time, Then, it is cooled to form an electrode layer on the to-be-welded surface to obtain the thin film sensor.

On the basis of the processing technology of the first aspect or the second aspect of the present invention, further optionally, in the third step, the preparation of the molten metal is heating the metal of the same material as the electrode layer to a molten state.

Based on the processing technology of the first aspect or the second aspect of the present invention, further optionally, in the third step, the to-be-welded surface is also subjected to ultrasonic treatment during the process of immersing the to-be-welded surface in the molten metal.

On the basis of the processing technology of the first aspect or the second aspect of the present invention, further optionally, in the fourth step, the metal brazing filler metal is placed in the to-be-soldered form in the form of paste, powder or sheet face.

On the basis of the processing technology of the first aspect or the second aspect of the present invention, further optionally, the material of the electrode layer is any one of tin, aluminum and alloys thereof;

And/or, the material of the piezoelectric layer is any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide, and titanium oxide;

And/or, the material of the insulating protective layer is any one of MgO, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond.

On the basis of the processing technology of the first aspect or the second aspect of the present invention, further optionally, the material of the transition layer is any one of titanium, nickel, zirconium and alloys thereof.

The metal substrate-based thin film sensor prepared by the process method of the present invention includes piezoelectric layer, insulating protective layer, transition layer and electrode layer in sequence from inside to outside. For example, if active elements such as Ti, Zr, Hf, V, etc. are added to the material of the outer electrode, the transition layer may not be added. If the outer electrode is a metal material such as elemental Sn, Al, a transition layer needs to be sputtered to Improve wettability. The piezoelectric layer is a functional layer structure for the mutual conversion of acoustic signals and electrical signals, and the insulating protective layer is to protect the piezoelectric layer, reduce the impact of various complex service environments on the piezoelectric layer, and improve the service life of the sensor. The transition layer is mainly used to strengthen the connection between the protective layer and the outer layer electrode metal, and the outer layer metal electrode has the function of sending and receiving electrical signals. The material and size of the metal base can be designed with different shapes and materials according to different application scenarios, preferably a bolt base. The annular mask set on the insulating protective layer of the present invention separates the inner and outer electrodes of the electrode layer to prevent the inner and outer electrodes from conducting.

The material of the metal base of the present invention can be any one of stainless steel, titanium alloy, high temperature alloy, and aluminum alloy; the material of the piezoelectric layer can be selected from zinc oxide, aluminum nitride, cadmium sulfide, any one of zinc sulfide, titanium oxide, lithium niobate, lead titanate and polyvinylidene fluoride, the thickness of the film formed by the material of the piezoelectric layer is 0.1 μm-30 μm; the material of the electrode layer is tin , any one of aluminum and its alloys, the thickness of the thin film formed by the material of the electrode layer is 0.1 μm-50 μm. The insulating protective layer is made of wear-resistant and corrosion-resistant high-resistance insulating materials. The design of the insulating protective layer can not only protect the piezoelectric layer material, reduce the influence of the external environment on the performance of the piezoelectric layer material, but also play a role in protecting the piezoelectric layer material. to the effect of electrical isolation. The material of the insulating protective layer can be any one of chromium oxide, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond, and the material of the insulating protective layer is formed The thickness of the film is 0μm-50μm (not 0). The material of the transition layer is any one of Sn, Ag, and Ti, and the thickness of the transition layer is 2 μm-3 μm.

The present invention is aimed at the large surface energy of the insulating protective layer, such as chromium oxide, and the poor wetting and spreading property of the brazing material, resulting in poor weldability between the insulating protective layer and the surface metal electrode. A transition layer is sputtered to improve wettability, expand the application space of electrodes, and achieve reliable surface connection for different metal electrodes under different service conditions.

In the processing technology proposed by the present invention, in step 1, the piezoelectric layer and the insulating protective layer grow each functional layer sequentially on the end face of the metal substrate, between the piezoelectric layer and the metal substrate, between the piezoelectric layer and the insulating protective layer, and the insulating Both the protective layer and the transition layer are bonded at the atomic level, and the atomic bonding is metal bonding. For example, the piezoelectric layer and the insulating protective layer are produced on the end face of the metal substrate by using the magnetron sputtering processing technology, and the electron beam physical gas phase is used. The deposition method (EB-PVD) deposits an insulating protective layer with a certain thickness of 2μm-3μm on the surface of the insulating protective layer. Depending on the composition of the outer electrode, the transition layer may not be required. If a transition layer is formed on the insulating protective layer, an organic solution is also used to clean the insulating protective layer before the transition layer is formed on the insulating protective layer, and the organic solution may be an acetone solution.

In step 2, when a transition layer is provided, a gluing machine is used to prepare an annular mask on the surface of the transition layer, and the transition layer in the inner ring of the annular mask and the outer transition layer in the outer ring of the annular mask form the surface to be welded. When no transition layer is provided, a gluing machine is used to prepare an annular mask on the surface of the insulating protective layer, and the insulating protective layer in the inner ring of the annular mask and the insulating protective layer outside the outer ring of the annular mask form the surface to be welded. The annular mask is used to distinguish the inner electrode from the outer electrode. The size of the annular mask depends on the size of the bolt, and the annular mask can be optionally a circular shape.

In step 3, the metal that helps to combine the electrode layer and the surface to be welded is heated to a temperature above the melting point, for example, heated to 20°C above the melting point temperature, so that the metal is in a molten state to form a molten metal, and then the surface to be welded is immersed in the metal. In the molten metal, the surface to be welded adheres to the molten metal. In order to obtain a better bonding effect between the molten metal and the surface to be welded, it is preferable to ultrasonically treat the surface to be welded when the surface to be welded is immersed in the molten metal. The treatment time depends on the time the surface to be welded is immersed in the molten metal. The molten metal is preferably obtained by heating a metal of the same material as the electrode layer to a molten state.

In step 4, take out the bolts that have been hot-dipped in the molten metal, place the paste, powder or sheet metal brazing filler metal used for preparing the electrode layer on the surface to be welded, and then put the metal base into the vacuum furnace. , or directly placed in the atmospheric environment or vacuum environment according to the surface electrode material, and then the brazing material is heated to a molten state, for example, an induction coil is used to heat the brazing material, so that the electrode metal is distributed in the annular mask. In the inner ring and the outer ring, the inner electrode and the outer electrode are formed, and the heat preservation time is set, such as 3min-5min, so that the metal of the electrode layer can fully diffuse with the protective layer, and then it can be cooled.

A third aspect of the present invention provides a processing device for realizing the processing technology proposed in the first or second aspect of the present invention, the processing device comprising:

A storage device for containing molten metal;

Clamping device for clamping metal substrates;

A control device, used for controlling the clamping device to clamp the metal substrate in a posture with the surface to be welded facing the molten metal, and controlling the clamping device to move toward the molten metal to make the surface to be welded face the molten metal The welding surface is immersed in the molten metal.

Further optionally, an ultrasonic device is also included for performing ultrasonic treatment on the to-be-welded surface during the process of immersing the to-be-welded surface in the molten metal.

The processing equipment of the present invention includes a base, a material storage device is arranged on the base, and an accommodation cavity is arranged in the discharge device, and the accommodation cavity is used for accommodating a molten metal liquid which is helpful for the combination of the surface to be welded and the metal electrode. A heating device is provided, and the heating device is used to heat the metal in the storage device to form molten metal. Preferably, an ultrasonic device, such as an ultrasonic generator, is also provided, which promotes the connection between the molten metal and the surface to be welded by emitting ultrasonic waves of a natural frequency. The clamping device is a manipulator-like structure that clamps the metal substrate, and controls the movement of the clamping mechanism through the control device. After the clamping mechanism clamps the metal substrate, the control mechanism controls the movement of the clamping mechanism to invert the metal substrate to make The surface to be welded faces the molten metal, and then continues to move downward by controlling the clamping mechanism until the surface to be welded is in contact with the molten metal, so that the molten metal adheres to the surface to be welded. The functional layer is located outside the molten metal.

The fourth aspect of the present invention provides a thin film sensor, which is prepared by using the processing technology proposed in the first or second aspect of the present invention, or by using the processing equipment proposed in the third aspect of the present invention.

After adopting the above-mentioned technical scheme, the present invention has the following beneficial effects compared with the prior art:

(1) The present invention improves the reliability of the outer layer electrode by brazing the outer layer metal electrode to achieve atomic-level bonding between the insulating protective layer and the electrode layer, or between the transition layer and the electrode layer.

(2) Compared with physical vapor deposition, the method of brazing is used to process the outer layer electrode in the present invention, and the outer layer electrode has higher density and shorter processing time, which improves the efficiency and reduces the time cost.

(3) The processing technology of the present invention can be carried out in the atmospheric environment, which greatly reduces the requirements of the process environment and makes the processing technology simpler.

(4) The metal electrode layer made of tin, aluminum and their alloys in the present invention has strong corrosion resistance, enhances the service life of the sensor, and at the same time expands the application space of the sensor.

The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.

Description of drawings

The accompanying drawings, as a part of the present invention, are used to provide further understanding of the present invention, and the exemplary embodiments of the present invention and their descriptions are used to explain the present invention, but do not constitute an improper limitation of the present invention. Obviously, the drawings in the following description are only some embodiments, and for those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort. In the attached image:

FIG. 1 is a process flow diagram of the processing technology of the first embodiment of the present invention.

FIG. 2 is a process flow diagram of the processing technology of the second embodiment of the present invention.

FIG. 3 is a structural diagram of the processing equipment according to the third embodiment of the present invention.

FIG. 4 is a structural diagram of a thin film sensor based on a metal substrate according to Embodiment 4 of the present invention.

FIG. 5 is a top view of FIG. 4 .

Among them: 1-electrode layer; 2-transition layer; 3-insulation protection layer; 4-piezoelectric layer; 5-metal base; 6-ring mask; 8-heating device; 9-ultrasonic generating device; 10-metal melting liquid; 11-base.

It should be noted that these drawings and written descriptions are not intended to limit the scope of the present invention in any way, but to illustrate the concept of the present invention to those skilled in the art by referring to specific embodiments.

Detailed ways

In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "inside", "outside", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, It is not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention.

In the description of the present invention, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected", "connected", "contacted" and "connected" should be understood in a broad sense, for example, it may be The fixed connection can also be a detachable connection or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood in specific situations.

The thin film sensor in the prior art has the problems of poor reliability of the outer layer electrode and low processing efficiency. Processing technology, equipment and control method.

Example 1

With reference to the process flow chart of FIG. 1 , the thin film sensor based on the metal substrate 5 of this embodiment includes the following steps:

Step 1: forming the piezoelectric layer 4 and the insulating protective layer 3 layer by layer on the end face of the metal substrate 5; using the magnetron sputtering processing technology to form the piezoelectric layer 4 and the insulating protective layer 3 layer by layer on the end face of the metal substrate 5;

Step 2: An annular mask 6 is arranged on the surface of the insulating protective layer 3, and the insulating protective layer 3 located in the annular mask 6 and the insulating protective layer 3 located outside the annular mask 6 are formed The surface to be welded; use a glue applicator to make an annular mask 6 between the inner electrode and the outer electrode on the surface of the insulating protective layer 3;

Step 3: Prepare a molten metal 10, immerse the surface to be welded in the molten metal 10 with the surface to be welded facing the molten metal 10 of the metal base 5; The molten metal 10 is prepared from the same metal brazing material. Preferably, the surface to be welded is ultrasonically treated when the surface to be welded is immersed in the molten metal 10, that is, the molten metal 10 and the protective layer are promoted by applying a natural frequency ultrasound to the surface to be welded. In this step, the piezoelectric layer 4 and the insulating protective layer 3 may be located outside the molten metal 10 or immersed in the molten metal 10 . Optionally, the molten metal 10 is prepared from the brazing filler metal for preparing the electrode layer 1 .

Step 4: Take the metal base 5 out of the molten metal 10, place the metal brazing filler metal used for preparing the electrode layer 1 on the surface to be welded, heat the metal brazing filler metal to a molten state, and then heat the brazing filler metal. After a certain period of time, it is cooled so that the electrode layer 1 is formed on the surface to be welded, that is, the thin film sensor is obtained. The metal brazing filler metal used for preparing the electrode layer 1 is placed on the surface to be welded in paste, powder or sheet form, the sample is placed in a vacuum environment or an atmospheric environment, and the metal brazing filler metal is heated to a molten state and kept for 3 min- 5min, then cooled.

In this embodiment, the material of the metal base 5 is any one of stainless steel, titanium alloy, high temperature alloy, and aluminum alloy; the material of the piezoelectric layer 4 is zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide, tannin oxide, Any one of lithium niobate, lead titanate and polyvinylidene fluoride; the material of the electrode layer 1 is any one of tin, aluminum and their alloys. The material of the insulating protective layer 3 is any one of chromium oxide, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond.

Embodiment 2

With reference to the process flow chart of FIG. 2 , the thin film sensor based on the metal substrate 5 of this embodiment includes the following steps:

Step 1: The piezoelectric layer 4, the insulating protective layer 3 and the transition layer 2 are formed layer by layer on the end face of the metal base 5; Protective layer 3, preferably adopts acetone solution to clean the surface of insulating protective layer 3, adopts electron beam physical vapor deposition method to generate transition layer 2 on the surface of insulating layer;

Step 2: An annular mask 6 is arranged on the surface of the transition layer 2, and the transition layer 2 located in the annular mask 6 and the transition layer 2 located outside the annular mask 6 form a surface to be welded ; Use a glue applicator to make an annular mask 6 between the inner electrode and the outer electrode on the surface of the transition layer 2;

Step 3: Prepare the molten metal 10, immerse the surface to be welded in the molten metal 10 with the surface to be welded facing the molten metal 10 of the metal base 5; the material will be the same as that of the electrode layer 1 The molten metal 10 is prepared from the metal brazing filler metal. Preferably, the surface to be welded is ultrasonically treated when the surface to be welded is immersed in the molten metal 10, that is, by applying a natural frequency ultrasound to the surface to be welded to promote the gap between the molten metal 10 and the protective layer. In this step, the piezoelectric layer 4 , the insulating protective layer 3 and the transition layer 2 can be located outside the molten metal 10 or immersed in the molten metal 10 . Optionally, the molten metal 10 is prepared from the brazing filler metal for preparing the electrode layer 1 .

Step 4: Take the metal base 5 out of the molten metal 10, place the metal brazing filler metal used for preparing the electrode layer 1 on the surface to be welded, heat the metal brazing filler metal to a molten state, and then heat the brazing filler metal. After a certain period of time, it is cooled so that the electrode layer 1 is formed on the surface to be welded, that is, the thin film sensor is obtained. The metal brazing filler metal used for preparing the electrode layer 1 is placed on the surface to be welded in paste, powder or sheet shape, the sample is placed in a vacuum environment or an atmospheric environment, and the metal brazing filler metal is heated to a molten state and kept for 3 minutes. -5min, then cool down

In this embodiment, the material of the metal base 5 is any one of stainless steel, titanium alloy, high temperature alloy, and aluminum alloy; the material of the piezoelectric layer 4 is zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide, tannin oxide, Any one of lithium niobate, lead titanate and polyvinylidene fluoride; the material of the electrode layer 1 is any one of tin, aluminum and their alloys. The material of the insulating protective layer 3 is any one of chromium oxide, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond. The material of the transition layer 2 is any one of Sn, Ag, and Ti.

Embodiment 3

This embodiment is a structural diagram of a processing equipment used to realize the processing techniques of the first and second embodiments. Combined with the structural diagram of the processing equipment in FIG. 3 , the processing equipment of this embodiment includes a base 11 , and a material storage device is arranged on the base 11 . , the storage device is provided with a accommodating cavity, and the accommodating cavity is filled with the molten metal 10 of the electrode layer 1 brazing material. The base 11 is also provided with a heating device 8, and the heating device 8 heats the solder of the electrode layer 1 in the accommodating cavity to a molten state. The heating device 8 is preferably a high-frequency induction coil arranged on the outer periphery of the accommodating cavity. The processing equipment of this embodiment also includes a clamping device (not shown in the figure) and a control device (not shown in the figure). The clamping device is a structure similar to a manipulator, and the clamping mechanism clamps the metal substrate 5 and passes the The control device controls the movement of the clamping mechanism. After the clamping mechanism clamps the metal base 5, the control mechanism controls the movement of the clamping mechanism to invert the metal base 5 so that the surface to be welded faces the molten metal 10, and then clamps the metal base 5 by controlling the movement. The mechanism continues to move downward until the surface to be welded is in contact with the molten metal 10 , so that the molten metal 10 adheres to the surface to be welded.

The processing equipment in this embodiment also includes an ultrasonic generator 9, which generates a fixed frequency ultrasonic wave to the storage device, and the base 11 transmits the natural frequency ultrasonic wave to the gap between the molten metal 10 and the surface to be welded for ultrasonic treatment. Facilitates the connection between the solder and the surface to be soldered.

Embodiment 4

This embodiment is a thin film sensor based on a metal substrate 5 that includes the processing technology of Embodiment 1 or Embodiment 2, or the processing equipment of Embodiment 3. As shown in FIG. 4 and FIG. 5, the metal substrate 5 can be Bolt fasteners are selected, and the thin film sensor includes a piezoelectric layer 4 , an insulating protective layer 3 , a transition layer 2 and an electrode layer 1 from the inside to the outside on the end face of the metal base 5 . Depending on the material composition of the outer electrode layer 1 , the transition layer 2 can be omitted. When the transition layer 2 is provided, a ring-shaped mask 6 is formed on the transition layer 2; when the transition layer 2 is not provided, a ring-shaped mask 6 is formed on the insulating protective layer 3, and the electrode layer 1 is located on the ring-shaped mask 6. Inside the inner ring and outside the outer ring. The material of the piezoelectric layer is any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide, and titanium oxide; the material of the insulating protective layer is dimethyl oxide, aluminum oxide, aluminum nitride, silicon oxide, nitride Any of silicon, silicon carbide, diamond and doped diamond; the material of the transition layer is any of titanium, nickel, zirconium and their alloys; the material of the electrode layer is any of tin, aluminum and their alloys kind.

Comparative ratio

The thin film sensor of the same material as the first embodiment and the second embodiment is prepared by using the physical vapor deposition method to prepare the thin film sensor of the outer layer electrode.

Test example

The thin film sensors based on metal substrates are prepared by the methods of Example 1 and Example 2, and the entire process takes less than 1 hour.

In the comparative example, the whole process of preparing the thin film sensor with the outer layer electrode by the physical vapor deposition method takes more than 10h.

It can be seen that the production efficiency of the thin film sensor based on the metal substrate can be significantly improved by using the method of this embodiment.

The above descriptions are only preferred embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with the technology of this patent Within the scope of the technical solution of the present invention, personnel can make some changes or modifications to equivalent examples of equivalent changes by using the above-mentioned technical content, but any content that does not depart from the technical solution of the present invention is based on the technical solution of the present invention. Substantially any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the solutions of the present invention.

Claims (10)

1. A processing technology of a thin film sensor based on a metal substrate is characterized by comprising the following steps:

the method comprises the following steps: forming a piezoelectric layer and an insulating protection layer on the end face of the metal substrate layer by layer;

step two: arranging an annular mask on the surface of the insulating protection layer, wherein the insulating protection layer positioned in the annular mask and the insulating protection layer positioned outside the annular mask form a surface to be welded;

step three: preparing a molten metal, and immersing the surface to be welded into the molten metal with the metal substrate in a posture that the surface to be welded faces the molten metal;

step four: and taking the metal substrate out of the molten metal, placing the metal solder for preparing the electrode layer on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer on the surface to be welded, thereby obtaining the film sensor.

2. A processing technology of a thin film sensor based on a metal substrate is characterized by comprising the following steps:

the method comprises the following steps: forming a piezoelectric layer, an insulating protection layer and a transition layer on the end face of the metal substrate layer by layer;

step two: arranging an annular mask on the surface of the transition layer, wherein the transition layer positioned in the annular mask and the transition layer positioned outside the annular mask form a surface to be welded;

step three: preparing a molten metal, and immersing the surface to be welded into the molten metal with the surface to be welded facing the molten metal;

step four: and taking the metal substrate out of the molten metal, placing the metal solder for preparing the electrode layer on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer on the surface to be welded, thereby obtaining the film sensor.

3. The process according to claim 1 or 2, wherein in the third step, the preparing of the metal melt is heating the metal of the same material as the electrode layer to a molten state.

4. The process for manufacturing a metal substrate-based thin film sensor according to claim 1 or 2, wherein in the third step, the surface to be welded is further subjected to ultrasonic treatment while being immersed in the molten metal.

5. The process for manufacturing a metal substrate-based thin film sensor according to claim 1 or 2, wherein in the fourth step, the metal solder is placed on the surface to be welded in the form of paste, powder or sheet.

6. The process for manufacturing a metal substrate-based thin film sensor according to claim 1 or 2, wherein the material of the electrode layer is any one of tin, aluminum and alloys thereof;

and/or the piezoelectric layer is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide and oxidized tan;

and/or the insulating protection layer is made of any one of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond.

7. The process for manufacturing a metal substrate-based thin film sensor according to claim 2, wherein the material of the transition layer is any one of titanium, nickel, zirconium and alloys thereof.

8. A processing apparatus for carrying out the process of any one of claims 1 to 7, comprising:

the storage device is used for containing molten metal;

the clamping device is used for clamping the metal substrate;

a control device for controlling the holding device to hold the metal substrate in a posture in which the surface to be welded faces the molten metal, and controlling the holding device to move in the molten metal direction so that the surface to be welded is immersed in the molten metal.

9. The processing apparatus according to claim 8, further comprising an ultrasonic device for ultrasonically treating the surface to be welded while the surface to be welded is immersed in the molten metal.

10. A thin film sensor made using the process of any one of claims 1 to 7, or the process equipment of any one of claims 8 to 9;

the thin film sensor comprises a piezoelectric layer, an insulating protection layer, a transition layer and an electrode layer; alternatively, the thin film sensor comprises a piezoelectric layer, an insulating protective layer and an electrode layer;

the piezoelectric layer is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide and oxidized tan;

the insulating protective layer is made of any one of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond;

the transition layer is made of any one of titanium, nickel, zirconium and alloy thereof;

the electrode layer is made of any one of tin, aluminum and alloy thereof.

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