CN115172246B - Device transfer substrate, preparation method thereof and device transfer method - Google Patents
Device transfer substrate, preparation method thereof and device transfer methodInfo
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- CN115172246B CN115172246B CN202210161282.8A CN202210161282A CN115172246B CN 115172246 B CN115172246 B CN 115172246B CN 202210161282 A CN202210161282 A CN 202210161282A CN 115172246 B CN115172246 B CN 115172246B
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- H10P72/74—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
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- H10P72/0442—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
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- H10P72/7414—
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Abstract
本申请提供了一种器件转移基板及其制备方法、器件转移方法，所述器件转移基板中，多个支撑单元间隔设置于所述第一衬底基板上方；其中，每个支撑单元包括支撑柱和设置于所述支撑柱远离所述第一衬底基板的一侧的连接部，以及与所述连接部连接的延伸部；多个元器件设置于所述延伸部远离所述第一衬底基板的一侧。在之后的器件转移过程中，在所述第三衬底基板和所述器件转移基板进行对位压合时，所述支撑单元的悬空部分(即上述延伸部)在所述元器件的压合作用下会发生断裂，与对应的所述连接部相断开，从而将所述元器件转移至所述第三衬底基板上。无需不成熟的激光加工，通过基板之间的压合作用就可以实现元器件的转移，可以大大提升工艺良率。
The present application provides a device transfer substrate and a preparation method thereof, as well as a device transfer method, wherein in the device transfer substrate, a plurality of support units are arranged at intervals above the first base substrate; wherein each support unit includes a support column and a connecting portion arranged on the side of the support column away from the first base substrate, and an extension portion connected to the connecting portion; a plurality of components are arranged on the side of the extension portion away from the first base substrate. In the subsequent device transfer process, when the third base substrate and the device transfer substrate are aligned and pressed together, the suspended portion of the support unit (i.e., the above-mentioned extension portion) will break under the pressing action of the component and be disconnected from the corresponding connecting portion, thereby transferring the component to the third base substrate. Without the need for immature laser processing, the transfer of components can be achieved through the pressing action between substrates, which can greatly improve the process yield.
Description
Technical Field
The application relates to the technical field of display, in particular to a device transfer substrate, a preparation method thereof and a device transfer method.
Background
With the continuous development of display technology, a light emitting Diode (LIGHT EMITTING Diode, abbreviated as LED) display technology has become one of the hot spots of research as a new display technology, wherein Micro LIGHT EMITTING Diode (Micro LED) and sub-millimeter light emitting Diode (MINI LIGHT EMITTING Diode, mini LED) with smaller sizes are increasingly used in large-size backlights due to their small sizes and thin backlight thicknesses. The Micro-LED and mini-LED technologies are used for respectively shrinking the sizes of the existing LEDs to be below 100 mu m and between 100 and 300 mu m.
However, the preparation process of Mini-LEDs and Micro-LEDs has a plurality of difficulties and complex technology, and particularly the key technology is a huge transfer technology. In the huge transfer technology of large-size display panels, the chips on the growth substrates are required to be transferred to small substrates, and then the chips on the small substrates are required to be transferred to large-size substrates or transferred to target substrates in a seal mode, but in the processes of 'small-to-large' and seal pick-up, the transfer yield is lower due to the immaturity of laser processes and equipment, and the performance of the chips is influenced by the heating step in the laser processes, so that the transfer yield is further reduced.
Disclosure of Invention
Aiming at the problems, the application provides a device transfer substrate, a preparation method thereof and a device transfer method, which can solve the technical problem of low transfer yield of a Micro/mini-LED display panel in the prior art.
In a first aspect, the present application provides a device transfer substrate comprising:
A first substrate base plate;
a plurality of support units arranged above the first substrate base plate at intervals; each support unit comprises a support column, a connecting part and an extending part, wherein the connecting part is arranged on one side, far away from the first substrate, of the support column, and the extending part is connected with the connecting part;
The plurality of components are arranged on one side of the extending part far away from the first substrate.
In some embodiments, the minimum width of the gap between the front projection of the component on the first substrate and the front projection of the corresponding support column on the first substrate is larger than the minimum width of the gap between the front projection of the component on the first substrate and the front projection of the corresponding extension part on the side edge far away from the connecting part on the first substrate.
The area ratio of the orthographic projection of the support column on the first substrate in the support unit to the orthographic projection of the support unit on the first substrate is 12.5% -15%.
In some embodiments, in the above device transfer substrate, the support columns have the same dimension on a side surface closer to the first substrate as on a side surface farther from the first substrate, or,
The dimension of the side surface of the support column, which is close to the first substrate, is larger than the dimension of the side surface of the support column, which is far away from the first substrate.
In some embodiments, in the device transfer substrate, a thickness of the extension portion in the support unit is greater than or equal to a height of the support column in a direction perpendicular to a surface of the first substrate adjacent to the support unit.
In some embodiments, in the device transfer substrate, the component is adhered to a side of the extension portion away from the first substrate through a first adhesive layer.
In some embodiments, in the device transfer substrate, the thickness of the first adhesive layer is smaller than the thickness of the component in a direction perpendicular to a surface of the first substrate, which is close to the supporting unit.
In some embodiments, in the device transfer substrate, an electrode pad is disposed on a side of the component close to the first substrate.
In a second aspect, the present application provides a method for preparing a device transfer substrate, comprising:
Providing a first substrate base plate;
Forming a plurality of support units arranged at intervals above the first substrate, wherein each support unit comprises a support column, a connecting part arranged on one side of the support column away from the first substrate, and an extending part connected with the connecting part, wherein the orthographic projection of the extending part on the first substrate does not cover the orthographic projection of the support column on the first substrate, and the extending part does not contact the first substrate;
And arranging a plurality of components on one side of the extension part far away from the first substrate.
In some embodiments, in the method for manufacturing a device transfer substrate, a plurality of support units are formed above the first substrate and are arranged at intervals, including the following steps:
forming a mask layer over the first substrate base plate;
forming a plurality of openings penetrating through the mask layer on the mask layer;
forming a supporting layer which covers the mask layer and is filled in the opening, wherein the thickness of the supporting layer is larger than or equal to that of the mask layer;
And patterning the support layer to form a plurality of support units which are arranged at intervals, wherein the support columns of the support units are positioned in the openings, and orthographic projection of the extension parts on the first substrate covers orthographic projection of part of the mask layer on the first substrate.
In some embodiments, in the method for manufacturing a device transfer substrate, the method for manufacturing a device transfer substrate includes the steps of:
Providing a second substrate, wherein the second substrate comprises a second base and a plurality of components formed on the second base;
Aligning the second substrate with the first substrate with the supporting unit formed thereon, and removing the second base in the second substrate to transfer the component to the side of the extension portion away from the first substrate;
and removing the residual mask layer on the first substrate.
In some embodiments, in the method for manufacturing a device transfer substrate, before the step of aligning the second substrate with the first substrate formed with the supporting unit, the method further includes:
A first adhesive layer is formed on a side of the extension portion remote from the first substrate.
In a third aspect, the present application provides a device transfer method, comprising:
Providing a device transfer substrate as described in any one of the first aspects or a device transfer substrate prepared by the preparation method as described in any one of the second aspects;
Providing a third substrate, wherein a second bonding layer is arranged on one side of the third substrate;
The third substrate base plate and the device transfer base plate are subjected to counterpoint lamination, so that the third substrate base plate is bonded with one side, far away from the first substrate base plate, of the component in the device transfer base plate through the second bonding layer, and the extending part of the supporting unit is disconnected with the corresponding connecting part under the lamination effect of the component;
And removing the first substrate and the supporting unit in the device transfer substrate to transfer the component onto the third substrate.
In some embodiments, in the device transferring method, in the transferring substrate, the component is adhered to a side of the extension portion away from the first substrate through a first adhesive layer;
removing the first substrate and the supporting unit from the device transfer substrate to transfer the component onto the third substrate, comprising the steps of:
removing the first substrate of the device transfer substrate, and the support columns and the connection parts of the support units to transfer the components onto the third substrate;
and removing the first bonding layer and the extension part bonded with the component.
In some embodiments, in the device transfer method described above, the second adhesive layer is a different material than the first adhesive layer.
In some embodiments, in the device transferring method, the thickness of the second adhesive layer is smaller than the thickness of the component along a direction perpendicular to a surface of the third substrate for aligning with the device transferring substrate.
By adopting the technical scheme, at least the following technical effects can be achieved:
The application provides a device transfer substrate, a preparation method thereof and a device transfer method, wherein a plurality of support units are arranged above a first substrate at intervals in the device transfer substrate, each support unit comprises a support column, a connecting part arranged on one side of the support column away from the first substrate, and an extending part connected with the connecting part, and a plurality of components are arranged on one side of the extending part away from the first substrate. In the subsequent device transferring process, when the third substrate and the device transferring substrate are aligned and pressed, the suspended part (i.e. the extending part) of the supporting unit will break under the pressing action of the components and parts, and disconnect from the corresponding connecting part, so as to transfer the components and parts onto the third substrate. In the device transfer method, immature laser processing is not needed, the transfer of components can be realized through the lamination effect between the substrates, and the process yield can be greatly improved.
Drawings
The accompanying drawings are included to provide a further understanding of the application, and are incorporated in and constitute a part of this specification, illustrate the application and together with the description serve to explain, without limitation, the application. In the drawings:
fig. 1 is a schematic cross-sectional structure of a device transfer substrate according to an exemplary embodiment of the present application;
fig. 2 is a schematic cross-sectional structure of another device transfer substrate according to an exemplary embodiment of the present application;
Fig. 3 is a flow chart illustrating a method for manufacturing a device transfer substrate according to an exemplary embodiment of the present application;
Fig. 4 is a schematic cross-sectional view of a first intermediate structure formed by the relevant steps of a method for manufacturing a device transfer substrate according to an exemplary embodiment of the present application;
Fig. 5 is a schematic cross-sectional view of a second intermediate structure formed by the relevant steps of a method for manufacturing a device transfer substrate according to an exemplary embodiment of the present application;
fig. 6 is a schematic cross-sectional view of a third intermediate structure formed by the relevant steps of a method for manufacturing a device transfer substrate according to an exemplary embodiment of the present application;
Fig. 7 is a schematic cross-sectional structure of a second substrate base plate according to an exemplary embodiment of the present application;
fig. 8 is a schematic cross-sectional view of a fourth intermediate structure formed by the relevant steps of a method for manufacturing a device transfer substrate according to an exemplary embodiment of the present application;
Fig. 9 is a schematic cross-sectional view of a fifth intermediate structure formed by the relevant steps of a method for manufacturing a device transfer substrate according to an exemplary embodiment of the present application;
Fig. 10 is a schematic cross-sectional view of a sixth intermediate structure formed by the relevant steps of a method for manufacturing a device transfer substrate according to an exemplary embodiment of the present application;
FIG. 11 is a flow chart of a device transfer method according to an exemplary embodiment of the application;
fig. 12 is a schematic cross-sectional structure of a third substrate base plate according to an exemplary embodiment of the present application;
FIG. 13 is a schematic cross-sectional view of a first intermediate structure formed by relevant steps of a device transfer method according to an exemplary embodiment of the present application;
FIG. 14 is a schematic cross-sectional view of a second intermediate structure formed by relevant steps of a device transfer method according to an exemplary embodiment of the present application;
Fig. 15 is a schematic cross-sectional view of a third intermediate structure formed by the relevant steps of a device transfer method according to an exemplary embodiment of the present application;
FIG. 16 is a schematic cross-sectional view of a product structure obtained by a device transfer method according to an exemplary embodiment of the present application;
in the drawings, wherein like parts are designated by like reference numerals throughout, the drawings are not to scale;
The reference numerals are:
10-device transfer substrate, 11-first substrate, 12-support unit, 121-support column, 122-connection part, 123-extension part, 13-device, 13 a-electrode pad, 14-first adhesive layer, 15-mask layer, 15 a-opening, 16-second substrate, 161-second substrate;
20-a third substrate base plate 21-a second adhesive layer;
X-distance between two adjacent supporting units, a-distance between orthographic projection of the component on the first substrate and orthographic projection of the corresponding supporting column on the first substrate, b-distance between orthographic projection of the component on the first substrate and orthographic projection of one side edge, far away from the connecting part, of the corresponding extending part on the first substrate, d 1-height of the supporting unit, and d 2-thickness of the extending part.
Detailed Description
The following will describe embodiments of the present application in detail with reference to the drawings and examples, thereby solving the technical problems by applying technical means to the present application, and realizing the corresponding technical effects can be fully understood and implemented accordingly. The embodiment of the application and the characteristics in the embodiment can be mutually combined on the premise of no conflict, and the formed technical scheme is within the protection scope of the application. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that, although the terms "first," "second," "third," etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for the purpose of providing a thorough understanding of the present application, detailed structures and steps are presented in order to illustrate the technical solution presented by the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other embodiments in addition to these detailed descriptions.
In a huge transfer technology of the large size of Mini-LEDs and Micro-LEDs, chips on a growth substrate are required to be transferred to a small substrate, and then the chips of the small substrate are required to be transferred to a large-size substrate or transferred to a target substrate in a seal mode, but release is completed in a laser mode by using dissociated materials in the processes of small-to-large and seal picking, and correspondingly, a close-packed device and a laser release device of small-to-large are required to carry out. However, the current laser process and equipment for dissociating materials are still immature, the transfer yield is low, and the heating step in the laser process can influence the performance of the chip, so that the transfer yield is reduced.
Accordingly, the present application provides a device transfer substrate 10, as shown in fig. 1, the device transfer substrate 10 including a first substrate 11, a plurality of support units 12, and a plurality of components 13.
The support units 12 are arranged above the first substrate 11 at intervals, each support unit 12 comprises a support column 121, a connecting portion 122 arranged on one side, far away from the first substrate 11, of the support column 121, and an extending portion 123 connected with the connecting portion 122, the orthographic projection of the extending portion 123 on the first substrate 11 does not cover the orthographic projection of the support column 121 on the first substrate 11, and the extending portion 123 does not contact the first substrate 11. I.e. the extension 123 is a suspended part in the support unit 12.
The plurality of components 13 are disposed on a side of the extension 123 away from the first substrate 11.
In this structure, in the subsequent device transfer process, when the target substrate and the device transfer substrate 10 are aligned and pressed, the suspended portion (i.e., the extending portion 123) of the supporting unit 12 will break under the pressing action of the component 13, and disconnect from the corresponding connecting portion 122, so as to transfer the component 13 onto the target substrate. In the device transfer method, the transfer of the components 13 can be realized through the lamination action between the substrates without immature laser processing, the heating process is reduced, and the process yield can be greatly improved. And the requirements on materials and equipment are reduced, the process window is larger, the reliability is higher, and the manufacturing of the large-size display device is facilitated.
In some embodiments, the minimum width (a) of the gap between the orthographic projection of the component 13 on the first substrate 11 and the orthographic projection of the corresponding support post 121 on the first substrate 11 is greater than the minimum width (b) of the gap between the orthographic projection of the component 13 on the first substrate 11 and the orthographic projection of the corresponding edge of the extension 123 on the side away from the connection 122 on the first substrate 11, i.e., a is greater than b.
It can be understood that, in order to facilitate the alignment and lamination between the target substrate and the device transfer substrate 10 in the subsequent device transfer process, the extension portion 123 of the supporting unit 12 and the corresponding connection portion 122 are easy to break under the influence of the shearing force under the lamination action of the component 13, and the minimum width (a) of the gap between the front projection of the component 13 on the first substrate 11 and the front projection of the corresponding support column 121 on the first substrate 11 can be greater than the minimum width (b) of the gap between the front projection of the component 13 on the first substrate 11 and the front projection of the corresponding extension portion 123 away from the connection portion 122 on the first substrate 11, that is, a is greater than b, so that the extension portion 123 and the corresponding connection portion 122 are easy to break under the influence of the shearing force under the lamination action of the component 13.
In some embodiments, as shown in fig. 1, the dimension of the side surface (i.e., the lower surface) of the support column 121 near the first substrate 11 is the same as the dimension of the side surface (i.e., the upper surface) of the support column 121 far from the first substrate 11. It is understood that the cross-sectional shape of the support columns 121 includes a rectangle in a plane perpendicular to the first substrate base plate 11.
In some embodiments, as shown in fig. 2, the dimension of the side surface (i.e., the lower surface) of the support column 121 near the first substrate 11 is larger than the dimension of the side surface (i.e., the upper surface) of the support column 121 far from the first substrate 11. It is understood that the cross-sectional shape of the support column 121 includes a regular trapezoid (trapezoid with a small upper part and a large lower part) in a plane perpendicular to the first substrate 11. With this structure, the extension 123 can be disconnected from the corresponding connection 122 under the pressing action of the component 13.
In some embodiments, the dimension of the side surface (i.e., the lower surface) of the support column 121 near the first substrate 11 may also be smaller than the dimension of the side surface (i.e., the upper surface) of the support column 121 far from the first substrate 11. It is understood that the cross-sectional shape of the support column 121 includes an inverted trapezoid (trapezoid having a large upper side and a small lower side) in a plane perpendicular to the first substrate 11. With this structure, the extension 123 can be disconnected from the corresponding connection 122 under the pressing action of the component 13.
In some embodiments, the area ratio of the orthographic projection of the support columns 121 in the support unit 12 onto the first substrate 11 to the orthographic projection of the support unit 12 onto the first substrate 11 is 12.5% -15%.
It will be appreciated that, in order to make the support columns 121 better support the support units 12, there may be enough areas to form the extensions 123, the area ratio of the orthographic projection of the support columns 121 on the first substrate 11 in the support units 12 to the orthographic projection of the support units 12 on the first substrate 11 is 12.5% -15%.
The size of the support unit 12, in particular the size of the extension 123, is related to the size of the component 13, the larger the size of the extension 123.
In some embodiments, the components 13 and the supporting units 12 may be in a one-to-one correspondence, and one component 13 is disposed on the extension 123 of one supporting unit 12.
Correspondingly, when the components 13 and the supporting units 12 may have a one-to-one correspondence, the spacing between two adjacent supporting units 12 depends on the spacing of the components 13 on the initial growth substrate or the spacing on the target substrate at the end.
In some embodiments, the spacing X between two adjacent support units 12 is 5 μm or more.
In some embodiments, the thickness d2 of the extension 123 in the support unit 12 is greater than or equal to the height d1 of the support column 121 in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the support unit 12.
It can be understood that the supporting unit 12 is formed by patterning the same film layer, so that the thickness d2 of the extending portion 123 may be greater than or equal to the height d1 of the supporting column 121 in order to connect the supporting column 121 and the extending portion 123 through the connecting portion 122 so that the supporting column 121 can support the extending portion 123.
In some embodiments, the height d1 of the support columns 121 is 1 μm to 3 μm in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the support unit 12. Further, the height d1 of the support column 121 may be 2 μm.
In some embodiments the dimension of the support columns 121 in a direction parallel to the surface of the first substrate 11 near the support unit 12 (i.e. the lateral dimension of the support columns 121) is larger than the dimension of the support columns 121 in a direction perpendicular to the surface of the first substrate 11 near the support unit 12 (i.e. the longitudinal height d1 of the support columns 121) to ensure that the support columns 121 are well connected with the first substrate 11 for a good support of the support columns 121.
In some embodiments, the dimension of the support columns 121 in a direction parallel to the surface of the first substrate base plate 11 near the support unit 12 (i.e., the lateral dimension of the support columns 121) is 3 μm to 10 μm. Further, the lateral dimension of the support column 121 may be 5 μm.
In some embodiments, the component 13 is adhered to the side of the extension 123 away from the first substrate 11 by the first adhesive layer 14, so as to avoid the component 13 moving during the transferring process, which results in a change of the position of the component 13.
In some embodiments, the thickness of the first adhesive layer 14 is smaller than the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the supporting unit 12. The material of the first adhesive layer 14 may be an adhesive organic material, and in the lamination process of the target substrate and the device transfer substrate 10, the component 13 may be sunk into the first adhesive layer 14 under the lamination effect, so in order to avoid that the component 13 is completely sunk into the first adhesive layer 14, and the thickness of the first adhesive layer 14 may be smaller than the thickness of the component 13, so as to affect the performance of the device.
Further, the thickness of the first adhesive layer 14 is one third or less of the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the supporting unit 12.
In some embodiments, the thickness of the first adhesive layer 14 may be 1 μm to 5 μm in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the supporting unit 12. Further, the thickness of the first adhesive layer 14 may be 2 μm.
In some embodiments, the component 13 is provided with an electrode pad 13a on a side close to the first substrate 11.
In some embodiments, component 13 may be a light emitting device. It will be appreciated that the device transfer substrate 10 provided by the present application is suitable for use in light emitting device transfer techniques.
In some embodiments, when the component 13 is a light emitting device, the component 13 may be a mini LED or a micro LED. Correspondingly, the electrode pads 13a of the component 13 include anode pads and cathode pads.
Wherein the mini LED has a cross-sectional dimension (length, width or diagonal or diameter, etc.) of between about 100 μm and about 300 μm. The cross-sectional dimensions (parameters such as length, width or diagonal or diameter) of the micro LED are below about 100 μm. In some embodiments, the thickness of the micro LED is 6 μm to 8 μm in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate base 11 near the supporting unit 12.
Correspondingly, the component 13 includes an anode layer, a light-emitting layer, and a cathode layer sequentially stacked in a direction perpendicular to a surface (and an upper surface shown in the drawing) of the first substrate 11 near the supporting unit 12. The anode bonding pad and the cathode bonding pad are respectively and electrically connected with the anode layer and the cathode layer and are respectively used for leading out the anode layer and the cathode layer.
In some embodiments, the material of the anode is a P-type GaN layer.
In some embodiments, the material of the cathode is an N-type GaN layer.
In some embodiments, the material of the light emitting layer is an InGaN multi-quantum well active layer.
In some embodiments, the light emitting side of the component 13 is disposed opposite to the electrode pad 13a, and correspondingly, in the above transfer substrate, the electrode pad 13a of the component 13 is located on a side of the component 13 close to the first substrate 11, and the light emitting side of the component 13 is located on a side of the component 13 away from the first substrate 11.
In some embodiments, the material of the first substrate 11 includes glass, quartz, sapphire, or the like.
In some embodiments, the material of the support unit 12 includes brittle nonmetallic materials such as silicon dioxide, silicon nitride, or metallic materials such as titanium, copper, or a laminate structure of the above materials.
The device transfer substrate 10 provided by the embodiment of the application, wherein a plurality of support units 12 are arranged above a first substrate 11 at intervals, each support unit 12 comprises a support column 121, a connecting part 122 arranged on one side of the support column 121 far away from the first substrate 11, and an extension part 123 connected with the connecting part 122, and a plurality of components 13 are arranged on one side of the extension part 123 far away from the first substrate 11. In the subsequent device transferring process, when the target substrate and the device transferring substrate 10 are aligned and pressed, the suspended portion (i.e. the extending portion 123) of the supporting unit 12 will break under the pressing action of the component 13, and disconnect from the corresponding connecting portion 122, so as to transfer the component 13. In the subsequent device transfer process, the transfer of the components 13 can be realized through the lamination effect between the substrates without immature laser processing, and the process yield can be greatly improved.
The present application provides a method for preparing a device transfer substrate 10, which is referred to as "patterning" hereinafter as comprising the steps of photoresist coating, mask exposure, development, etching, and photoresist stripping. Among them, the "patterning" process for patterning the photoresist, including the processes of coating the photoresist, mask exposure, development, etc., has no etching step and no step of stripping the photoresist. The "deposition" may be selected from any one or more of sputtering, evaporation and chemical vapor deposition, and the etching may be selected from any one or more of dry etching and wet etching.
Referring to fig. 3, a method for preparing a device transfer substrate 10 (e.g., the device transfer substrate 10 shown in fig. 1) according to an embodiment of the present application includes the following steps:
step S110 provides the first substrate base plate 11.
In some embodiments, the material of the first substrate 11 includes glass, quartz, sapphire, or the like.
Step S120, a plurality of support units 12 are formed above the first substrate 11 at intervals, wherein each support unit 12 comprises a support column 121 and a connecting part 122 arranged on one side of the support column 121 away from the first substrate 11, and an extension part 123 connected with the connecting part 122, and the front projection of the extension part 123 on the first substrate 11 does not cover the front projection of the support column 121 on the first substrate 11, and the extension part 123 does not contact the first substrate 11.
The extension 123 is a suspended portion in the support unit 12.
In some embodiments, the cross-sectional shape of the support columns 121 in a plane perpendicular to the first substrate base plate 11 includes a rectangle or trapezoid.
In some embodiments, the area ratio of the orthographic projection of the support columns 121 in the support unit 12 onto the first substrate 11 to the orthographic projection of the support unit 12 onto the first substrate 11 is 12.5% -15%.
It will be appreciated that, in order to make the support columns 121 better support the support units 12, there may be enough areas to form the extensions 123, the area ratio of the orthographic projection of the support columns 121 on the first substrate 11 in the support units 12 to the orthographic projection of the support units 12 on the first substrate 11 is 12.5% -15%.
In some embodiments, the thickness d2 of the extension 123 in the support unit 12 is greater than or equal to the height d1 of the support column 121 in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the support unit 12.
In some embodiments, the height d1 of the support columns 121 is 1 μm to 3 μm in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the support unit 12. Further, the height d1 of the support column 121 may be 2 μm.
In some embodiments, the dimension of the support columns 121 in a direction parallel to the surface of the first substrate 11 near the support unit 12 (i.e., the lateral dimension of the support columns 121) is greater than the dimension of the support columns 121 in a direction perpendicular to the surface of the first substrate 11 near the support unit 12 (i.e., the longitudinal height d1 of the support columns 121) to ensure that the support columns 121 are well connected with the first substrate 11 for good support of the support columns 121.
In some embodiments, the dimension of the support columns 121 in a direction parallel to the surface of the first substrate base plate 11 near the support unit 12 (i.e., the lateral dimension of the support columns 121) is 3 μm to 10 μm. Preferably, the lateral dimension of the support column 121 may be 5 μm.
In some embodiments, step S120 includes the steps of:
S122, forming a mask layer 15 above the first substrate 11;
s124, as shown in FIG. 4, forming a plurality of openings 15a penetrating the mask layer 15 on the mask layer 15;
s126, forming a supporting layer which covers the mask layer 15 and is filled in the opening 15a, wherein the thickness of the supporting layer is larger than or equal to that of the mask layer 15;
and S128, patterning the support layer to form a plurality of support units 12 arranged at intervals, wherein the support columns 121 of the support units 12 are positioned in the openings 15a, and the orthographic projection of the extension parts 123 on the first substrate 11 covers the orthographic projection of part of the mask layer 15 on the first substrate 11.
The support column 121 of the support unit 12 is located in the opening 15a, and the shape and size of the support column 121 are consistent with those of the opening 15 a.
In some embodiments, the material of mask layer 15 includes photoresist.
The thickness of the supporting layer is greater than or equal to the thickness of the mask layer 15, so that the extending portion 123 and the supporting column 121 in the supporting unit 12 can be connected by the connecting portion 122, and the supporting column 121 can support the extending portion 123.
It can be understood that since the support unit 12 is formed by forming the support layer on the first substrate 11 and then patterning, the intermolecular binding force between the support columns 121 of the support unit 12 and the first substrate 11 is strong, and the support columns 121 can achieve a strong supporting effect.
In some embodiments, the material of the support layer includes brittle nonmetallic materials such as silicon dioxide, silicon nitride, or metallic materials such as titanium, copper, or a laminated structure of the above materials.
In step S130, the plurality of components 13 are disposed on the side of the extension 123 away from the first substrate 11.
The size of the support unit 12, in particular the size of the extension 123, is related to the size of the component 13, the larger the size of the extension 123.
In some embodiments, the components 13 and the supporting units 12 may be in a one-to-one correspondence, and one component 13 is disposed on the extension 123 of one supporting unit 12.
Correspondingly, when the components 13 and the supporting units 12 may have a one-to-one correspondence, the spacing between two adjacent supporting units 12 depends on the spacing of the components 13 on the initial growth substrate or the spacing on the target substrate at the end.
In some embodiments, the spacing between adjacent two support units 12 is 5 μm or more.
In some embodiments, in the resulting transfer substrate, the minimum width (a) of the gap between the front projection of the component 13 on the first substrate 11 and the front projection of the corresponding support column 121 on the first substrate 11 is greater than the minimum width (b) of the gap between the front projection of the component 13 on the first substrate 11 and the front projection of the corresponding edge of the extension 123 away from the connection portion 122 on the first substrate 11, i.e. a is greater than b, so that the extension 123 and the corresponding connection portion 122 are prone to break under the influence of the shearing force under the pressing action of the component 13.
In some embodiments, step S130 includes the steps of:
providing a second substrate 16 as shown in fig. 7, wherein the second substrate 16 comprises a second base 161 and a plurality of components 13 formed on the second base 161;
s134, as shown in fig. 8, aligning the second substrate 16 with the first substrate 11 formed with the supporting unit 12, and removing the second base 161 in the second substrate 16 to transfer the component 13 to the side of the extension 123 away from the first substrate 11, as shown in fig. 9;
And S136, removing the residual mask layer 15 on the first substrate 11.
The device transfer substrate 10 as shown in fig. 1 is finally obtained.
In some embodiments, in the second substrate 16, the electrode pads 13a of the component 13 are located at a side away from the second base 161, so that after the component 13 is transferred onto the first substrate 11, the electrode pads 13a of the component 13 are located at a side close to the first substrate 11.
The second substrate 161 is an initial growth substrate of the component 13. When the component 13 is a light emitting device, the light emitting side of the component 13 is positioned at a side close to the second substrate 161, and separation between the second substrate 161 and the component 13 may be performed by laser lift-off, polishing, etching, or the like.
In some embodiments, the conditions for alignment bonding between the second substrate 16 and the first substrate 11 with the support unit 12 formed thereon may be 80-200 ℃, 0.3-1.5 mpa, and vacuum of KPa.
Preferably, the contraposition pressing condition is that the temperature is 150 ℃, the pressure is 0.5MPa, and the vacuum is-100 KPa.
In some embodiments, before aligning the second substrate 16 with the first substrate 11 formed with the supporting unit 12 in step S134, the method may further include:
as shown in fig. 6, the first adhesive layer 14 is formed on a side of the extension 123 remote from the first substrate 11.
In the process of aligning and pressing the second substrate 16 and the first substrate 11 formed with the supporting unit 12, the side of the component 13 far away from the second substrate 16 is bonded with the side of the extending portion 123 of the supporting unit 12 far away from the first substrate 11 through the first bonding layer 14, so as to avoid the movement of the component 13 in the transferring process, resulting in the change of the position of the component 13.
In some embodiments, the first adhesive layer 14 may be coated entirely on the first substrate base 11, and then after the step of removing the second base 161 in the second substrate base 16 in step S134, the first adhesive layer 14 portion other than the orthographic projection on which the component 13 falls may be etched away by dry etching, and the orthographic projection on which the component 13 falls on the first adhesive layer 14 may be made to partially coincide with the remaining first adhesive layer 14. A first adhesive layer 14 pattern as shown in fig. 10 is obtained.
In some embodiments, the thickness of the first adhesive layer 14 is smaller than the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the supporting unit 12. The material of the first adhesive layer 14 may be an adhesive organic material, and in the lamination process of the target substrate and the device transfer substrate 10, the component 13 may be sunk into the first adhesive layer 14 under the lamination effect, so in order to avoid that the component 13 is completely sunk into the first adhesive layer 14, and the thickness of the first adhesive layer 14 may be smaller than the thickness of the component 13, so as to affect the performance of the device.
Further, the thickness of the first adhesive layer 14 is one third or less of the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the supporting unit 12.
In some embodiments, when the material of the mask layer 15 is photoresist, the remaining photoresist may be removed in a wet etching manner in step S136.
According to the preparation method of the device transfer substrate 10 provided by the embodiment of the application, the plurality of support units 12 are formed on the first substrate 11, then the components 13 are arranged on one side, far away from the first substrate 11, of the extension parts 123 of the support units 12, and when the formed device transfer substrate 10 is subjected to para-position pressing with the target substrate and the device transfer substrate 10 in the subsequent device transfer process, the suspended parts (namely the extension parts 123) of the support units 12 are broken under the pressing action of the components 13, and are disconnected with the corresponding connection parts 122, so that the components 13 are transferred. In the subsequent device transfer process, the transfer of the components 13 can be realized through the lamination effect between the substrates without immature laser processing, and the process yield can be greatly improved.
On the basis of the above device transfer substrate 10, referring to fig. 11, a device transfer method according to an embodiment of the present application includes the following steps:
Step S210, providing the device transfer substrate 10 according to any one of the above or the device transfer substrate 10 prepared by the preparation method according to any one of the above.
Step S220 as shown in fig. 12, a third substrate 20 is provided, wherein a second adhesive layer 21 is provided on one side of the third substrate 20.
In step S230, as shown in fig. 13, the third substrate 20 and the device transfer substrate 10 are aligned and pressed, so that the third substrate 20 is bonded to a side of the device transfer substrate 10, which is far away from the first substrate 11, of the component 13 through the second bonding layer 21, and the extension 123 of the supporting unit 12 is disconnected from the corresponding connection portion 122 under the pressing action of the component 13, as shown in fig. 14.
Step S240, removing the first substrate 11 and the supporting unit 12 from the device transfer substrate 10 to transfer the component 13 onto the third substrate 20.
In some embodiments, when the electrode pad 13a of the component 13 is located on the side close to the first substrate 11 in the transfer substrate, the electrode pad 13a of the component 13 is located on the side far from the third substrate 20 after the component 13 is transferred onto the third substrate 20.
That is, due to the special structural design of the supporting unit 12 in the device transferring substrate 10, when the third substrate 20 and the device transferring substrate 10 are aligned and pressed, the suspended portion (i.e. the extending portion 123) of the supporting unit 12 is pressed and broken by the component 13, so that the component 13 is separated from the first substrate 11, and the transfer of the component 13 is realized.
Therefore, in the device transfer method, the transfer of the components 13 can be realized through the lamination effect between the substrates without immature laser processing, and the process yield can be greatly improved.
In some embodiments, in the structure obtained after step S240, the thickness of the second adhesive layer 21 is smaller than the thickness of the component 13 in a direction perpendicular to the surface of the third base substrate 20 for alignment with the device transfer substrate 10. The material of the second adhesive layer 21 may be an adhesive organic material, and in the lamination process of the third substrate 20 and the device transfer substrate 10, the component 13 may be sunk into the second adhesive layer 21 under the lamination effect, so in order to avoid that the component 13 is completely sunk into the second adhesive layer 21, and the thickness of the second adhesive layer 21 may be smaller than the thickness of the component 13, which affects the performance of the device.
Further, the thickness of the second adhesive layer 21 is one third or less of the thickness of the component 13 in a direction perpendicular to the surface of the third base substrate 20 for alignment with the device transfer substrate 10.
It should be noted that, since the supporting unit 12 is directly formed on the first substrate 11, the intermolecular binding force between the supporting columns 121 of the supporting unit 12 and the first substrate 11 is relatively strong, and when the suspended portion (i.e., the extending portion 123) of the supporting unit 12 breaks, the supporting columns 121 of the supporting unit 12 can be strongly supported.
In contrast, in the case of the alignment bonding between the third substrate 20 and the device transfer substrate 10, the blocking action of the first substrate 11 causes the bonding to be completed after the extension 123 breaks until the extension 123 comes into contact with the first substrate 11, and at this time, there is no intermolecular bonding force between the extension 123 and the first substrate 11, which is a simple contact relationship. At this time, the first substrate base plate 11 and the support columns 121 and the connection parts 122 of the support units 12 thereon can be directly removed.
In some embodiments, when the component 13 is fixedly connected to the extension 123, the extension 123 may be removed by etching or the like.
In some embodiments, in the transfer substrate, the component 13 is bonded to the side of the extension 123 remote from the first substrate 11 by the first adhesive layer 14. Correspondingly, step S240 includes the steps of:
S242, as shown in fig. 15, removing the first substrate 11 of the device transfer substrate 10, and the support columns 121 and the connection parts 122 of the support units 12 to transfer the components 13 onto the third substrate 20;
as shown in fig. 16, the first adhesive layer 14 and the extension 123 adhered to the component 13 are removed S244.
In some embodiments, the extension 123 and the first adhesive layer 14 attached to the component 13 may be removed by cleaning the first adhesive layer 14 with a special chemical agent to clean the first adhesive layer 14, so that the extension 123 may be separated from the component 13, thereby completing the transfer of the component 13.
In some embodiments, to avoid affecting the second adhesive layer 21 during the cleaning of the first adhesive layer 14, and causing the component 13 to be detached from the third substrate 20, the second adhesive layer 21 may be protected by a protective layer during the cleaning of the first adhesive layer 14.
In some embodiments, different tacky materials may also be used to prepare the first adhesive layer 14 and the second adhesive layer 21, i.e., the second adhesive layer 21 is a different material than the first adhesive layer 14, and then the first adhesive layer 14 is removed using a solvent that dissolves the first adhesive layer 14 but does not dissolve the second adhesive layer 21.
In some embodiments, the second adhesive layer 21 and the first adhesive layer 14 may be dissolved in different solvents by adding different additives to the same substrate, such that the second adhesive layer 21 and the first adhesive layer 14 are dissolved in different solvents.
The adhesive material used for the second adhesive layer 21 and the first adhesive layer 14 may include an epoxy resin-based, an acrylic-based or a polymer-based organic material.
Further, the entire substrate obtained after step S242 may be placed in a solvent that can dissolve the first adhesive layer 14 but does not dissolve the second adhesive layer 21, and after the first adhesive layer 14 is dissolved, the extension 123 may be separated from the component 13, thereby completing the transfer of the component 13.
According to the device transferring method provided by the embodiment of the application, the third substrate 20 and the device transferring substrate 10 are subjected to counterpoint lamination, so that the third substrate 20 is bonded with one side of the device transferring substrate 10, which is far away from the first substrate 11, of the component 13 through the second bonding layer 21, and meanwhile, the suspended part (namely the extending part 123) of the supporting unit 12 is disconnected with the corresponding connecting part 122 under the lamination action of the component 13, so that the transfer is realized. In the device transfer method, the transfer of the components 13 can be realized through the lamination action between the substrates without immature laser processing, and the process yield can be greatly improved.
The embodiment of the application also provides a display panel which is prepared by adopting the device transfer method of any one of the above.
The above is only a preferred embodiment of the present application, and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application. Although the embodiments of the present application are disclosed above, the present application is not limited to the embodiments which are used for the convenience of understanding the present application. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is still subject to the scope of the present disclosure as defined by the appended claims.
Claims (15)
1. A device transfer substrate, comprising:
A first substrate base plate;
a plurality of support units arranged above the first substrate base plate at intervals; each support unit comprises a support column, a connecting part and an extending part, wherein the connecting part is arranged on one side, far away from the first substrate, of the support column, and the extending part is connected with the connecting part;
the plurality of components are arranged on one side of the extending part far away from the first substrate base plate;
The extending part of the supporting unit is disconnected with the corresponding connecting part under the pressing action of the components.
2. The device transfer substrate of claim 1, wherein a minimum width of a gap between an orthographic projection of the component on the first substrate and an orthographic projection of the corresponding support post on the first substrate is greater than a minimum width of a gap between an orthographic projection of the component on the first substrate and an orthographic projection of the corresponding extension portion on a side edge of the first substrate remote from the connection portion;
the area ratio of the orthographic projection of the support column on the first substrate in the support unit to the orthographic projection of the support unit on the first substrate is 12.5% -15%.
3. The device transfer substrate of claim 2, wherein a dimension of a side surface of the support column near the first substrate is the same as a dimension of a side surface of the support column away from the first substrate, or,
The dimension of the side surface of the support column, which is close to the first substrate, is larger than the dimension of the side surface of the support column, which is far away from the first substrate.
4. The device transfer substrate according to claim 1, wherein a thickness of the extension portion in the support unit is equal to or greater than a height of the support column in a direction perpendicular to a surface of the first substrate near the support unit.
5. The device transfer substrate of claim 1, wherein the component is bonded to a side of the extension away from the first substrate by a first adhesive layer.
6. The device transfer substrate according to claim 5, wherein a thickness of the first adhesive layer is smaller than a thickness of the component in a direction perpendicular to a surface of the first substrate close to the supporting unit.
7. The device transfer substrate of claim 1, wherein an electrode pad is disposed on a side of the component adjacent to the first substrate.
8. A method of making a device transfer substrate, comprising:
Providing a first substrate base plate;
Forming a plurality of support units arranged at intervals above the first substrate, wherein each support unit comprises a support column, a connecting part arranged on one side of the support column away from the first substrate, and an extending part connected with the connecting part, wherein the orthographic projection of the extending part on the first substrate does not cover the orthographic projection of the support column on the first substrate, and the extending part does not contact the first substrate;
arranging a plurality of components on one side of the extending part far away from the first substrate base plate;
The extending part of the supporting unit is disconnected with the corresponding connecting part under the pressing action of the components.
9. The method of manufacturing according to claim 8, wherein forming a plurality of support units disposed at intervals over the first substrate base plate, comprises the steps of:
forming a mask layer over the first substrate base plate;
forming a plurality of openings penetrating through the mask layer on the mask layer;
forming a supporting layer which covers the mask layer and is filled in the opening, wherein the thickness of the supporting layer is larger than or equal to that of the mask layer;
And patterning the support layer to form a plurality of support units which are arranged at intervals, wherein the support columns of the support units are positioned in the openings, and orthographic projection of the extension parts on the first substrate covers orthographic projection of part of the mask layer on the first substrate.
10. The method of manufacturing according to claim 9, wherein disposing a plurality of components on a side of the extension portion away from the first substrate includes:
Providing a second substrate, wherein the second substrate comprises a second base and a plurality of components formed on the second base;
Aligning the second substrate with the first substrate with the supporting unit formed thereon, and removing the second base in the second substrate to transfer the component to the side of the extension portion away from the first substrate;
and removing the residual mask layer on the first substrate.
11. The method of manufacturing according to claim 10, wherein before the step of aligning the second substrate with the first substrate formed with the supporting unit, the method further comprises:
A first adhesive layer is formed on a side of the extension portion remote from the first substrate.
12. A device transfer method, comprising:
Providing a device transfer substrate according to any one of claims 1 to 7 or a device transfer substrate prepared by a preparation method according to any one of claims 8 to 11;
Providing a third substrate, wherein a second bonding layer is arranged on one side of the third substrate;
The third substrate base plate and the device transfer base plate are subjected to counterpoint lamination, so that the third substrate base plate is bonded with one side, far away from the first substrate base plate, of the component in the device transfer base plate through the second bonding layer, and the extending part of the supporting unit is disconnected with the corresponding connecting part under the lamination effect of the component;
And removing the first substrate and the supporting unit in the device transfer substrate to transfer the component onto the third substrate.
13. The device transfer method according to claim 12, wherein in the transfer substrate, the component is bonded to a side of the extension portion remote from the first substrate via a first adhesive layer;
removing the first substrate and the supporting unit from the device transfer substrate to transfer the component onto the third substrate, comprising the steps of:
removing the first substrate of the device transfer substrate, and the support columns and the connection parts of the support units to transfer the components onto the third substrate;
and removing the first bonding layer and the extension part bonded with the component.
14. The device transfer method of claim 13, wherein the second adhesive layer is a different material than the first adhesive layer.
15. The device transfer method of claim 12, wherein a thickness of the second adhesive layer is smaller than a thickness of the component in a direction perpendicular to a surface of the third substrate for alignment with the device transfer substrate.
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