CN115148434A - Resistor structure and manufacturing method thereof - Google Patents
Resistor structure and manufacturing method thereof Download PDFInfo
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- CN115148434A CN115148434A CN202210887588.1A CN202210887588A CN115148434A CN 115148434 A CN115148434 A CN 115148434A CN 202210887588 A CN202210887588 A CN 202210887588A CN 115148434 A CN115148434 A CN 115148434A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C10/00—Adjustable resistors
- H01C10/16—Adjustable resistors including plural resistive elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
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Abstract
The invention provides a resistor structure and a manufacturing method thereof, wherein the resistor structure comprises: a substrate; the metal layer is arranged on the substrate, and an electrode area, a non-electrode area and an isolation area are arranged on the metal layer; a resistance value adjusting layer is arranged on the non-electrode area and used for adjusting the resistivity of the resistance structure; an electrode layer is arranged in the electrode area; a first insulating layer is arranged in the isolation region; and a second insulating layer is arranged on the resistance value adjusting layer. According to the invention, the resistance value adjusting layer is arranged on the metal layer to adjust the overall resistivity of the resistor interface, so that the resistance value of the resistor structure is adjusted, and the resistance value of the adjusted resistor meets the use requirement under the condition of determining the size of the resistor.
Description
Technical Field
The invention relates to the technical field of electronic elements, in particular to a resistor structure and a manufacturing method thereof.
Background
With the rapid development of science and technology, devices in various systems are increasingly miniaturized and portable. The volume of the electronic components which are responded and form various devices is smaller and smaller, and the trend is also the current development trend. For the resistance component, adjusting the resistance value of the resistance element can be realized by changing the resistance area, length, material and the like, or changing the whole volume of the resistance component.
In the application process of the resistor element, there is usually a certain relationship between the size information such as the thickness and the area of the surface resistor and the resistance value of the resistor. The resistance value of the resistor is usually a fixed value without changing the specific structure of the resistor. Under the condition that the size information of the resistor is required, the resistance value of the resistor cannot be adjusted and cannot meet the current use requirement. For example, the minimum size of the current resistor is 01005, and the resistance value (minimum) at this size may still not meet the requirement of the use scenario.
The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.
Disclosure of Invention
The invention mainly aims to provide a resistor structure and a manufacturing method thereof, and aims to solve the technical problem that the resistance value of a resistor cannot meet the use requirement under the condition of determining the size of the resistor in the prior art.
In order to achieve the above object, the present invention provides a resistor structure, including:
a substrate;
the metal layer is arranged on the substrate, and an electrode area, a non-electrode area and an isolation area arranged between the electrode area and the non-electrode area are arranged on the metal layer;
a resistance value adjusting layer is arranged on the non-electrode area and used for adjusting the resistivity of the resistance structure;
an electrode layer is arranged in the electrode area;
a first insulating layer is arranged in the isolation region;
and a second insulating layer is arranged on the resistance value adjusting layer.
Optionally, when the resistance value of the resistance structure needs to be reduced, the resistivity of the resistance value adjusting layer is smaller than or equal to the resistivity of the metal layer.
Optionally, when the resistance of the resistor structure needs to be increased, the resistivity of the resistance adjusting layer is greater than the resistivity of the metal layer.
Optionally, the resistive structure further comprises a contact layer disposed on the substrate, and the metal layer is disposed on the contact layer.
Optionally, the first insulating layer and the second insulating layer are composed of an organic material, an inorganic material, or a combination material of an organic material and an inorganic material.
Optionally, the electrode layer comprises: the first rack plating metal area and the second rack plating metal area;
the electrode regions comprise a first electrode region and a second electrode region which are respectively arranged at two ends of the metal layer;
the first rack plating metal area is arranged in the first electrode area, and the second rack plating metal area is arranged in the second electrode area.
Optionally, the first rack plating metal area and the second rack plating metal area each include: a copper layer of a first predetermined thickness;
a nickel layer with a second preset thickness arranged on the copper layer;
and a tin layer with a third preset thickness is arranged on the nickel layer.
In order to achieve the above object, the present invention further provides a method for manufacturing a resistor structure, where the method for manufacturing a resistor structure includes:
obtaining a substrate;
disposing a metal layer on the substrate;
arranging a first insulating layer in the isolation region on the metal layer, and arranging a resistance value adjusting layer in the non-electrode region;
a second insulating layer is arranged on the resistance value adjusting layer;
and hanging and plating an electrode layer in the electrode area on the metal layer.
Optionally, the step of providing a resistance adjusting layer in the non-electrode region includes:
determining the resistance value adjusting requirement of the resistance structure and the resistivity of the metal layer;
selecting a resistance value adjusting layer material according to the resistance value adjusting requirement and the resistivity of the metal layer;
and arranging a resistance value adjusting layer in the non-electrode area on the metal layer by using the selected resistance value adjusting layer material.
Optionally, the step of selecting a resistance adjustment layer material according to the resistance adjustment requirement and the metal layer material includes;
when the resistance value adjusting requirement is to reduce the resistance value of the resistance structure, selecting a material with the resistivity less than or equal to that of the metal layer as a resistance value adjusting layer material;
and when the resistance value adjustment requirement is to improve the resistance value of the resistance structure, selecting a material with the resistivity larger than that of the metal layer as a resistance value adjustment layer material.
The invention provides a resistor structure and a manufacturing method thereof, wherein the resistor structure comprises: a substrate; the metal layer is arranged on the substrate, and an electrode area and a non-electrode area are arranged on the metal layer; a resistance value adjusting layer is arranged on the non-electrode area and used for adjusting the resistivity of the resistance structure; an electrode layer is arranged in the electrode area, a first insulating layer is arranged in the isolation area, and a second insulating layer is arranged on the resistance value adjusting layer. According to the invention, the resistance value adjusting layer is arranged on the metal layer to adjust the overall resistivity of the resistor interface, so that the resistance value of the resistor structure is adjusted, and the resistance value of the adjusted resistor meets the use requirement under the condition of determining the size of the resistor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a first embodiment of a resistor structure according to the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of a resistor structure according to the present invention;
fig. 3 is a top view of a second embodiment of a resistor structure according to the present invention;
fig. 4 is a schematic structural diagram of a third embodiment of a resistor structure according to the present invention;
FIG. 5 is a schematic flow chart of a first embodiment of a method for fabricating a resistor structure according to the present invention;
fig. 6 is a schematic flow chart of a resistor structure manufacturing method according to a second embodiment of the invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name(s) | |
| 1 | Substrate | 2 | |
|
| 3 | |
4 | Resistance value adjusting |
|
| 5 | Electrode layer | 7 | A second insulating layer | |
| 6 | A first insulating layer | Sn | Tin layer | |
| Cu | Copper layer | | Nickel layer | |
| 8 | Insulating layer |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and back \8230;) in the embodiments of the present invention are only used to explain the relative positional relationship between the components, the motion situation, etc. in a specific posture (as shown in the attached drawings), and if the specific posture is changed, the directional indicators are changed accordingly.
In addition, the descriptions relating to "first", "second", etc. in the present invention are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should be considered to be absent and not within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a first embodiment of a resistor structure according to the present invention. A first embodiment of the resistor structure of the present invention is provided based on fig. 1.
In this embodiment, the resistor structure includes: a substrate 1;
the metal layer 3 is arranged on the substrate 1, and an electrode region, a non-electrode region and an isolation region arranged between the electrode region and the non-electrode region are arranged on the metal layer 3;
a resistance value adjusting layer 4 is arranged on the non-electrode area and used for adjusting the resistivity of the resistance structure;
an electrode layer 5 is arranged in the electrode area;
a first insulating layer 6 is arranged in the isolation region;
and a second insulating layer 7 is arranged on the resistance value adjusting layer.
It will be appreciated that the substrate 1 is the bottom for carrying the entire resistive structure. The substrate 1 may be composed of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, such as a ceramic substrate, a glass fiber plate, or the like.
It will be appreciated that the resistive structure further comprises a contact layer 2 disposed on the substrate 1, the metal layer 3 being disposed on the contact layer 2. The contact layer 2 can be used for fixing the metal layer 3 on the substrate 1, and under the condition that the contact layer 2 is not arranged, the metal layer 3 may not be directly arranged on the substrate 1 due to poor bonding force between the composition material of the substrate 1 and the composition material of the metal layer 3, and at the moment, the contact layer 2 can be arranged between the substrate 1 and the metal layer 3, so that the adhesion between the substrate 1 and the metal layer 3 is improved. For example, when it is desired to place metal on a glass sheet, a certain amount of glue can be used, which is the contact layer between the metal and the glass sheet. The contact layer 2 may be made of epoxy or acryl materials, which may allow the metal layer 3 to be more preferably adhered to the substrate 1. The metal layer 3 is a conductive structure layer, and the specific resistance value of the resistance structure is directly related to the size and the constituent material of the metal layer 3. The material constituting the metal layer 3 has a certain resistivity so that the resistive structure exhibits resistivity. The metal layer 3 may be composed of a pure metal or a metal alloy, such as a pure metal material of copper, silver, gold, etc., or an alloy including copper, silver, manganese, tin, etc.
The resistance value adjusting layer 4 is a structure for adjusting the resistance value of the resistor structure. The resistance value adjusting layer 4 may be a structure composed of a material having a resistivity different from that of the metal layer 3. The specific material used for the resistance value adjusting layer 4 needs to be determined according to how the resistance value of the resistor structure is adjusted. In the case where the resistance value needs to be reduced, the resistance value adjusting layer 4 needs to be formed by selecting a material having a resistivity equal to or lower than that of the material of the metal layer 3. Under the condition that the resistivity of the resistance value adjusting layer 4 is lower, the overall resistivity of the conductive structure metal layer 3 and the resistance value adjusting layer 4 in the resistor structure is reduced, so that the resistance value of the resistor structure is reduced. In addition, when the same material is used for the resistance value adjusting layer 4 and the metal layer 3, the cross-sectional area of the whole conductive structure formed by the metal layer 3 and the resistance value adjusting layer 4 is increased, and at this time, the resistance value of the resistor structure can be reduced. Under the condition that the resistance value of the resistance structure needs to be improved, the resistance value adjusting layer 4 can be made of a material with higher resistivity, and the resistivity of the resistance value adjusting layer 4 is larger than that of the material of the metal layer 3, such as an ITO material. In addition, when the specific resistance value is adjusted, the adjustable resistance value can be determined according to the conductivity of the material of the resistance value adjusting layer 4 and the corresponding size information of the resistance value adjusting layer 4. The resistance value adjusting layer 4 and the electrode layer 5 need to be arranged at a certain distance, and in specific arrangement, the distance area can be in the range of 20-50 micrometers.
It is understood that the electrode layer 5 is a structure for connecting the metal layer 3 with an external element. The electrode layer 5 can be arranged in the electrode area by means of rack plating. The electrode layer 5 may be composed of a pure metal material or an alloy material, and the composition material of the electrode layer 5 may be the same as that of the metal layer 3. The electrode area can be divided into two parts which are respectively arranged at two ends of the metal layer 3, and two ends of the metal layer 3 are respectively led out through different electrode layers 5. In addition, in this embodiment, a plurality of electrode layers, for example, two electrode layers, may be disposed in the electrode region of the metal layer 3 to form a four-electrode structure.
In this embodiment, a first insulating layer 6 is further disposed on the metal layer 3, and the first insulating layer 6 is located in a space between the resistance value adjusting layer 4 and the electrode layer 5.
It should be understood that, in the process of setting the resistor structure, the material of the resistance adjusting layer 4 is a conductive material, and if there is contact between the resistance adjusting layer 4 and the electrode layer 5, the current flowing through the resistor structure can flow out through the resistance adjusting layer 4 and the electrode layer 5 which are in contact with each other, at this time, the resistance adjusting layer 4 and the electrode layer 5 can be defaulted to be a resistor lead, thereby affecting the resistance of the whole resistor structure. Therefore, the first insulating layer 6 is provided in the spacer between the resistance value adjusting layer 4 and the electrode layer 5 in the resistance structure. The first insulating layer 6 is only used to isolate the resistance adjusting layer 4 from the electrode layer 5, so the first insulating layer 6 may be made of an insulating material.
In addition, in order to prevent the resistance value of the resistor structure from changing due to the influence of the gas in the external environment on the material of the resistance value adjusting layer 4, a second insulating layer 7 needs to be provided on the upper surface of the resistance value adjusting layer 4. The second insulating layer 7 can be effectual keep apart metal level 3 and resistance regulating layer 4 and external environment spare to avoid metal level 3 and resistance regulating layer 4 to receive external environment influence, protect metal level 3 and resistance regulating layer 4. The first insulating layer 6 and the second insulating layer 7 may be made of an organic material, an inorganic material, or a mixture of an organic material and an inorganic material, where the organic material may be solder mask ink, the inorganic material may be silicon dioxide, gallium nitride, aluminum nitride, or the like, and the mixture may be an organic material and an inorganic material stacked together, for example, a layer of silicon dioxide is disposed on the solder mask ink, or a layer of solder mask ink is disposed on the silicon dioxide. In the specific arrangement, the second insulating layer 7 should cover the resistance adjusting layer 4 and all exposed regions on the metal layer 3, including the upper region of the isolation region. When the resistance adjusting layer 4 is made of a material having a high resistance to water and oxygen, such as an ITO material, the second insulating layer 7 may be omitted, and finally, a related protection structure may be provided on the entire structure. When the resistance adjusting layer 4 is made of a material with a relatively low resistivity, in order to avoid the subsequent process of rack-plating the electrode layer 5 from affecting the resistivity of the resistance adjusting layer 4, the second insulating layer 7 should be disposed to cover the resistance adjusting layer 4 and all exposed areas on the metal layer 3 before the rack-plating of the electrode layer 5.
Because the material of resistance adjustment layer 4 has certain resistivity, need protect resistance adjustment layer 4 when rack-plating electrode layer 5, consequently in resistance structure manufacture process, need rack-plating electrode layer 5 after setting up first insulating layer 6 and second insulating layer 7, set up first insulating layer 6 in the isolation region, then set up resistance adjustment layer 4, after 4 settings are accomplished in the resistance, set up second insulating layer 7 on resistance adjustment layer 4. Of course, after the position of the non-electrode region of the resistance value adjusting layer 4 is determined, the resistance value adjusting layer 4 may be disposed in the fixed position of the non-electrode region, then the second insulating layer 7 and the first insulating layer 6 are disposed, and finally the electrode layer 5 is rack-plated.
The present embodiment provides a resistor structure, including: a substrate; the metal layer is arranged on the substrate, and an electrode area and a non-electrode area are arranged on the metal layer; a resistance value adjusting layer is arranged on the non-electrode area and used for adjusting the resistivity of the resistance structure; an electrode layer is arranged in the electrode area, and a first insulating layer is arranged in the isolation area; and a second insulating layer is arranged on the resistance value adjusting layer. In this embodiment, the resistance value of the resistor interface is adjusted by setting the resistance value adjusting layer on the metal layer, so that the resistance value of the resistor structure is adjusted, and the resistance value of the adjusted resistor meets the use requirement under the condition that the size of the resistor is determined.
Referring to fig. 2 and 3, fig. 2 is a schematic structural diagram of a second embodiment of the resistor structure according to the present invention;
fig. 3 is a top view of a second embodiment of a resistor structure according to the present invention. A second embodiment of the resistor structure of the present invention is proposed based on the first embodiment of the resistor structure described above.
In the present embodiment, the electrode layer 5 includes: the first rack plating metal area and the second rack plating metal area;
the electrode regions comprise a first electrode region and a second electrode region which are respectively arranged at two ends of the metal layer;
the first rack plating metal area is arranged in the first electrode area, and the second rack plating metal area is arranged in the second electrode area.
It should be understood that, in the process of setting the resistor structure, two electrode leads are required to be respectively arranged to connect two ends of the resistor with an external device. Therefore, when the rack plating electrode layer 5 is provided, two rack plating metal layers need to be provided, that is, the electrode layer includes two rack plating metal layers. The rack plating metal layer is a metal layer arranged in the electrode area of the metal layer 3 in a rack plating mode. The rack plating metal layer can be connected with other components through wires. Similarly, the metal layer 3 should also include two electrode regions, i.e., a first electrode region and a second electrode region, where a rack plating metal layer may be rack-plated in both the first electrode region and the second electrode region.
The first electrode region and the second electrode region are respectively arranged at two ends of the metal layer 3, so that the electrode layer 5 in the electrode region can be prevented from contacting the resistance value adjusting region 3, the resistivity of the whole metal layer 3 can be acquired, and the resistance value of the resistor structure can be prevented from being detected by mistake. The resistance value acquired by the electrode layer 5 is the resistance value on the metal layer 3 between the two electrode layers, and in the case where the electrode layers 5 are not located at both ends of the metal layer 3, the detected resistance value is not the actual resistance value of the entire metal layer 3.
In addition, in this embodiment, the thickness of the electrode layer 5 is larger than the thicknesses of the resistance value adjusting layer 4 and the second insulating layer 7.
It will be appreciated that during the placement of the resistive structure, the electrode layer 5 needs to be brought out in order to establish a connection of the resistive structure to other components. Therefore, the thickness of the electrode layer 5 provided on the metal layer 3 should be appropriately larger than the sum of the thicknesses of the resistance adjusting layer 4 and the second insulating layer 7 so that the electrode layer 5 is protrudingly provided on the resistance structure.
In this embodiment, the first rack plating metal layer and the second rack plating metal layer each include: a copper layer Cu with a first preset thickness;
a nickel layer Ni with a second preset thickness is arranged on the copper layer Cu;
and a tin layer Sn with a third preset thickness is arranged on the nickel layer Ni.
It should be understood that since copper has good conductivity, a copper layer Cu having a large thickness may be provided when a current passing through the metal layer 3 is drawn. The first predetermined thickness is a predetermined thickness of the copper layer Cu, and the thickness of the copper layer Cu may be the same as the thickness of the resistance adjusting layer 4. The tin layer Sn is a material layer arranged on the uppermost layer of the rack plating metal layer. Because the tin material has certain oxidation resistance, the tin layer Sn is directly exposed in the external environment, and the external environment can not influence the structure of the plating metal layer. Wherein, the third thickness of predetermineeing is the thickness that sets up tin layer Sn in advance, and when specifically setting up, tin layer Sn's thickness only need satisfy the demand of wearing and tearing can, therefore tin layer Sn's third thickness of predetermineeing can be less than copper layer Cu's first thickness of predetermineeing far away.
It should be noted that, in this embodiment, the tin layer Sn may also be directly disposed on the copper layer Cu, and since the material difference between tin and copper is large and the adhesion between tin and copper is poor, the detection of the resistance value according to the resistance structure may not be accurate, and the problem of the resistance power coefficient may also be caused. Therefore, in practical application, a nickel layer Ni can be arranged between the copper layer Cu and the tin layer Sn, the nickel layer Ni can better adhere the copper layer Cu and the tin layer Sn together, and the problem of the resistance power coefficient generated in the metal rack plating layer can be avoided.
It is understood that the second predetermined thickness is a predetermined thickness of the nickel layer Ni, and since the nickel layer Ni plays a role of better adhesion between the copper layer Cu and the tin layer Sn, a thicker nickel layer Ni is not required, and the second predetermined thickness of the nickel layer Ni may be smaller than the third predetermined thickness of the tin layer Sn. For example, the thickness of each of the copper layer Cu and the resistance adjusting layer 4 may be set to 80 μm, the thickness of the nickel layer Ni may be set to 5 μm, and the thickness of the tin layer Sn may be set to 10 μm.
Further, the thickness of the resistance adjusting layer 4 may be the same as that of the copper layer Cu. The thickness of the second insulating layer 7 may be the same as the sum of the thicknesses of the tin layer Sn and the nickel layer Ni. In the process of manufacturing the resistor structure, the electrode layer 5, the resistance adjusting layer 4, the first insulating layer 6 and the second insulating layer 7 are all necessary structures. Wherein, the electrode layer 5 is arranged in the electrode area on the metal layer 3, and the resistance adjusting layer 4 and the second insulating layer 7 are arranged in the non-electrode area of the metal layer 3 in sequence. The sum of the thicknesses of the resistance value adjusting layer 4 and the second insulating layer 7 is equal to the thickness of the electrode layer 5, so that the thickness of the resistor structure can be reduced, and other performances of the resistor structure can be improved. For example, when the thickness of the electrode layer 5 is greater than the sum of the resistance value adjusting layer 4 and the second insulating layer 7, the thickness of the second insulating layer 7 can be increased, so that the protection of the metal layer 3 and the resistance value adjusting layer 4 is further enhanced without changing the overall thickness of the resistor structure; and under the condition that the thickness of the electrode layer 5 is less than the sum of the thicknesses of the resistance value adjusting layer 4 and the second insulating layer 7, the thickness of the copper layer Cu in the electrode layer 5 can be properly adjusted, and the stability of the resistance structure during measurement is improved.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a third embodiment of the resistor structure according to the present invention. A fourth embodiment of the resistor structure of the present invention is proposed based on the above-described third embodiment.
In this embodiment, when the resistance value of the resistor needs to be reduced, the second insulating layer 7 and the first insulating layer 6 may be disposed on the resistance value adjusting layer 4 and in the isolation region at the same time.
It should be understood that, when the resistance value of the resistor needs to be reduced, the material of the resistance value adjusting layer 4 mainly adopts a material with a lower resistance value than that of the metal layer 3, and the rack-plated electrode layer 5 is also a material with a lower resistance value, which may cause a part of the material of the electrode layer 5 to be rack-plated onto the resistance value adjusting layer 4 during the rack-plating process of the electrode layer 5, thereby affecting the overall resistance value of the resistor structure. Of course, the first insulating layer 6 may be made of the same material as the second insulating layer 7, and both may be provided as a single unit during the process to form a complete insulating layer 8.
In the manufacturing process of the resistor structure, the second insulating layer 7 and the first insulating layer 6 need to be correspondingly arranged on the resistance value adjusting layer 4 and in the isolation region respectively, and after the resistance value adjusting layer 4 is completely protected, the electrode layer 5 is plated in the electrode region on the metal layer 3. For example, when the resistor structure is manufactured, a complete insulating layer 8 can be directly arranged in the isolation region and on the resistance value adjusting layer 4 by using solder mask ink, then the electrode layer 5 is hung and plated in the electrode region on the metal layer 3, and due to the protection of the insulating layer 8, the material of the electrode layer 5 can not be hung and plated on the resistance value adjusting layer 4 in the process of hanging and plating the electrode layer 5, so that the influence of the hanging and plating of the electrode layer 5 on the resistance value adjusting layer 4 is effectively avoided.
In addition, in order to achieve the above object, the present invention further provides a method for manufacturing a resistor structure, and referring to fig. 4, fig. 4 is a schematic flow diagram of a first embodiment of the method for manufacturing a resistor structure according to the present invention. A first embodiment of the method for fabricating a resistor structure according to the present invention is provided based on fig. 4.
In this embodiment, the method for manufacturing the resistor structure includes:
step S10: a substrate is obtained.
It will be appreciated that the substrate is the bottom for carrying the entire resistive structure. The substrate may be composed of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, such as a ceramic substrate, a glass fiber board, or the like.
Step S20: a metal layer is disposed on the substrate.
It should be noted that the metal layer is a conductive structure layer, and the specific resistance value of the resistance structure is directly related to the size and the constituent material of the metal layer. The material comprising the metal layer has a resistivity such that the resistive structure is resistive. The metal layer may be composed of a pure metal or a metal alloy, such as a pure metal material of copper, silver, or an alloy including copper, silver, manganese, tin, or the like.
It should be noted that the contact layer may be used to fix the metal layer on the substrate, and in a case where the contact layer is not provided, the metal layer may not be directly provided on the substrate due to a poor bonding force between the constituent material of the substrate and the constituent material of the metal layer, and at this time, the contact layer may be provided between the substrate and the metal layer, so as to improve adhesion between the substrate and the metal layer. For example, when it is desired to place metal on a glass sheet, a certain amount of glue can be used, which is the contact layer between the metal and the glass sheet. The contact layer can be made of epoxy or acrylic materials, so that the metal layer can be better adhered to the substrate.
In a specific implementation, in consideration of the adhesion between the substrate and the metal layer and the power coefficient of resistance, after the substrate is disposed, a connection layer may be disposed on the substrate, and then a corresponding metal layer may be disposed on the connection layer.
Step S30: and arranging a first insulating layer in the isolation region on the metal layer, and arranging a resistance value adjusting layer in the non-electrode region.
It is understood that the resistance value adjusting layer is a structure for adjusting the resistance value of the resistance structure. The resistance value adjusting layer may be a structure composed of a material having a resistivity different from that of the metal layer material. The specific material used for the resistance value adjusting layer needs to be determined according to how the resistance value of the resistor structure is adjusted. In the case of reducing the resistance value, it is necessary to select a material having a resistivity less than or equal to that of the metal layer material to form the resistance value adjusting layer, and for example, a metal material or an alloy having good conductivity and low resistivity, such as copper, silver, or gold, may be selected. Under the condition that the resistivity of the resistance value adjusting layer is lower, the overall resistivity of the conductive structure metal layer and the resistance value adjusting layer in the resistor structure is reduced, and therefore the resistance value of the resistor structure is reduced.
In addition, when the resistance value adjusting layer and the metal layer are made of the same material, the cross-sectional area of the whole conductive structure formed by the metal layer and the resistance value adjusting layer is increased, and at the moment, the resistance value of the resistor structure can be reduced. Under the condition that the resistance value of the resistance structure needs to be improved, a material with higher resistivity can be selected to manufacture the resistance value adjusting layer, and the resistivity of the resistance value adjusting layer is larger than that of a metal layer material, such as an ITO material. In addition, when the specific resistance value adjusting degree is aimed at, the adjustable resistance value can be determined according to the conductivity of the material of the resistance value adjusting layer and the corresponding size information of the resistance value adjusting layer.
It should be noted that, when the first insulating layer and the resistance adjusting layer are disposed on the metal layer, the first insulating layer may be disposed in the isolation region, and then the resistance adjusting layer may be disposed in a rack plating or sputtering manner on the non-electrode region isolated by the first insulating layer. When the resistance value adjusting layer is made of a metal material or an alloy material with lower resistivity, the resistance value adjusting layer can be arranged on the metal layer in a rack plating mode; when the resistance value adjusting layer is made of an ITO material with higher resistivity, the resistance value adjusting layer can be arranged on the metal layer in a sputtering mode. In addition, when the resistance value adjusting layer is made of a metal material or an alloy material with lower resistivity, the resistance value adjusting layer can be arranged on the metal layer in an evaporation mode. Certainly, when the specific position of the resistance value adjusting layer is determined, the resistance value adjusting layer can be directly arranged at the determined position, namely in the non-electrode area, so that the material of the resistance value adjusting layer is prevented from being attached to the electrode area or the isolation area, and then the first insulating layer is arranged in the isolation area.
Step S40: and arranging a second insulating layer on the resistance value adjusting layer.
It can be understood that, in order to prevent the resistance value of the resistance structure from changing due to the influence of the gas in the external environment on the structure of the metal layer, a second insulating layer is further required to be disposed on the upper surface of the non-electrode region on the resistance value adjusting layer. The second insulating layer can effectually keep apart resistance regulating layer and external environment spare to avoid the resistance regulating layer to receive external environment to influence, protect the resistance regulating layer. The second insulating layer may be made of an organic material, an inorganic material, or a mixture of an organic material and an inorganic material, such as solder resist ink. When the second insulating layer is provided, the first insulating layer may be provided at the same time.
Step S50: and hanging and plating an electrode layer in the electrode area on the metal layer.
It should be understood that the electrode layer is a wiring layer for connecting the metal layer with an external element. The electrode layer can be arranged in the electrode area in a rack plating mode. The electrode layer may be composed of a pure metal material or an alloy material, and the electrode layer may be composed of the same material as that of the metal layer. The electrode layer may include a copper layer, a nickel layer, and a tin layer.
In a specific setting process, the electrode layer can be arranged in the electrode area on the metal layer in a rack plating mode. For example, a copper layer with a first preset thickness can be rack-plated on the electrode region, then a nickel layer with a second preset thickness is rack-plated on the copper layer, and finally a tin layer with a third preset thickness is rack-plated on the nickel layer to complete rack-plating of the whole electrode layer.
The embodiment provides a method for manufacturing a resistor structure, which comprises the following steps: obtaining a substrate; disposing a metal layer on the substrate; arranging a resistance value adjusting layer in the non-electrode area on the metal layer; an electrode layer is hung in the electrode area on the metal layer; and arranging a second insulating layer on the resistance value adjusting layer. In this embodiment, the overall resistivity of the resistor interface is adjusted by arranging the resistance adjusting layer on the metal layer, so that the resistance of the resistor structure is adjusted, and the resistance of the adjusted resistor meets the use requirement under the condition that the size of the resistor is determined.
Referring to fig. 5, fig. 5 is a flow chart illustrating a manufacturing method of a resistor structure according to a second embodiment of the invention. The second embodiment of the method for fabricating a resistor structure according to the present invention is provided based on the first embodiment of the method for fabricating a resistor structure.
In this embodiment, the step of providing the resistance adjusting layer in the non-metal region in step S30 may include:
step S301: and determining the resistance value adjusting requirement of the resistance structure and the resistivity of the metal layer.
It should be understood that the requirement of resistance adjustment is the requirement of adjusting the resistance value in the current application scenario. The resistance value adjusting requirement comprises a resistance value requirement of reducing the resistance value of the resistance structure and a resistance value requirement of improving the resistance value of the resistance structure. Before the resistance value adjusting layer in the resistor structure is arranged, a resistance value adjusting layer material needs to be selected. The resistance value of the resistor structure needs to be adjusted based on the resistivity of the metal layer material. Therefore, before the resistance value adjusting layer is arranged, the resistance value adjusting requirement in the current application scene and the resistivity of the metal layer in the resistance structure need to be determined.
Step S302: selecting a resistance value adjusting layer material according to the resistance value adjusting requirement and the resistivity of the metal layer.
It should be noted that, under the condition that the resistance value adjustment requirement and the resistivity of the metal layer are determined, the resistivity of the metal layer is used as a selection standard, and the resistance value adjustment layer material is selected according to the resistance value adjustment requirement. When the resistance value adjustment requirement is to reduce the resistance value of the resistance structure, selecting a material with the resistivity less than or equal to that of the metal layer as a resistance value adjustment layer material, such as copper, gold, silver and other materials; and when the resistance value adjustment requirement is to improve the resistance value of the resistance structure, selecting a material with the resistivity larger than that of the metal layer as a resistance value adjustment layer material, such as an ITO material.
Step S303: and arranging a resistance value adjusting layer in the non-electrode area on the metal layer by using the selected resistance value adjusting layer material.
It will be appreciated that where the resistance tuning layer material is defined, a certain amount of the resistance tuning layer material may be provided directly in the non-electrode area on the metal layer. When the resistance adjusting layer is specifically arranged, the arrangement mode can be selected according to the specific material of the resistance adjusting layer, for example, when the material of the resistance adjusting layer is copper, gold, silver and the like, the resistance adjusting layer can be directly arranged in the non-electrode area on the metal layer in a sputtering or rack plating mode; when the resistance value adjusting layer is made of an ITO material, the ITO material can be arranged in the non-electrode area of the metal layer in a sputtering mode. In addition, when the resistance value adjusting layer is made of copper, gold, silver and the like, the situation that the resistance value adjusting layer is made of the same material as the electrode layer may exist, and at the moment, in the manufacturing process of the resistor structure, the electrode layer and the resistance value adjusting layer can be simultaneously plated at the corresponding positions in a hanging mode, so that repeated operation is avoided.
In addition, in this embodiment, before the second insulating layer is disposed, a first insulating layer needs to be disposed in the isolation region between the resistance value adjusting layer and the electrode layer, and during the specific implementation process, the isolation region may be determined first, then the first insulating layer is disposed in the isolation region, then the second insulating layer is disposed on the first insulating layer and the resistance value adjusting layer, and finally the electrode layer is rack-plated in the electrode region of the metal layer.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent structures or equivalent processes performed by the present invention or directly or indirectly applied to other related technical fields are also included in the scope of the present invention.
Claims (10)
1. A resistive structure, comprising:
a substrate;
the metal layer is arranged on the substrate, and an electrode region, a non-electrode region and an isolation region arranged between the electrode region and the non-electrode region are arranged on the metal layer;
a resistance value adjusting layer is arranged on the non-electrode area and used for adjusting the resistivity of the resistance structure;
an electrode layer is arranged in the electrode area;
a first insulating layer is arranged in the isolation region;
and a second insulating layer is arranged on the resistance value adjusting layer.
2. The resistor structure according to claim 1, wherein when the resistance of the resistor structure needs to be reduced, the resistivity of the resistance adjusting layer is less than or equal to the resistivity of the metal layer.
3. The resistor structure according to claim 1, wherein the resistivity of the resistance adjusting layer is greater than the resistivity of the metal layer when the resistance of the resistor structure needs to be increased.
4. The resistive structure of claim 1, further comprising a contact layer disposed on the substrate, the metal layer disposed on the contact layer.
5. The resistive structure of claim 1, wherein the first and second insulating layers are comprised of an organic material, an inorganic material, or a combination of organic and inorganic materials.
6. The resistive structure of claim 5, wherein the electrode layer comprises: the first rack plating metal area and the second rack plating metal area;
the electrode regions comprise a first electrode region and a second electrode region which are respectively arranged at two ends of the metal layer;
the first rack plating metal area is arranged in the first electrode area, and the second rack plating metal area is arranged in the second electrode area.
7. The resistive structure of claim 6, wherein the first and second rack plated metal regions each comprise: a copper layer of a first predetermined thickness;
a nickel layer of a second predetermined thickness disposed on the copper layer;
and a tin layer with a third preset thickness arranged on the nickel layer.
8. A method for fabricating a resistor structure according to any one of claims 1 to 7, wherein the method for fabricating a resistor structure comprises:
obtaining a substrate;
providing a metal layer on the substrate;
arranging a first insulating layer in the isolation region on the metal layer, and arranging a resistance value adjusting layer in the non-electrode region;
a second insulating layer is arranged on the resistance value adjusting layer;
and hanging and plating an electrode layer in the electrode area on the metal layer.
9. The method for fabricating a resistor structure according to claim 8, wherein the step of providing a resistance adjusting layer in the non-electrode region includes:
determining the resistance value adjusting requirement of the resistance structure and the resistivity of the metal layer;
selecting a resistance value adjusting layer material according to the resistance value adjusting requirement and the resistivity of the metal layer;
and arranging a resistance value adjusting layer in the non-electrode area on the metal layer by using the selected resistance value adjusting layer material.
10. The method according to claim 9, wherein the step of selecting the resistance adjusting layer material according to the resistance adjusting requirement and the metal layer material comprises;
when the resistance value adjusting requirement is to reduce the resistance value of the resistance structure, selecting a material with the resistivity less than or equal to that of the metal layer as a resistance value adjusting layer material;
and when the resistance value adjustment requirement is to improve the resistance value of the resistance structure, selecting a material with the resistivity larger than that of the metal layer as a resistance value adjustment layer material.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200625349A (en) * | 2005-01-10 | 2006-07-16 | Prosperity Dielectrics Co Ltd | High power chip resistor structure with double-layer resistor layer |
| CN1945764A (en) * | 2005-10-07 | 2007-04-11 | E.I.内穆尔杜邦公司 | Trimmable resistor and method of manufacture thereof |
| JP2013089655A (en) * | 2011-10-14 | 2013-05-13 | Panasonic Corp | Method for manufacturing chip resistor |
| CN113113199A (en) * | 2021-04-14 | 2021-07-13 | 南京萨特科技发展有限公司 | High-power alloy foil resistor and manufacturing method thereof |
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2022
- 2022-07-26 CN CN202210887588.1A patent/CN115148434B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200625349A (en) * | 2005-01-10 | 2006-07-16 | Prosperity Dielectrics Co Ltd | High power chip resistor structure with double-layer resistor layer |
| CN1945764A (en) * | 2005-10-07 | 2007-04-11 | E.I.内穆尔杜邦公司 | Trimmable resistor and method of manufacture thereof |
| JP2013089655A (en) * | 2011-10-14 | 2013-05-13 | Panasonic Corp | Method for manufacturing chip resistor |
| CN113113199A (en) * | 2021-04-14 | 2021-07-13 | 南京萨特科技发展有限公司 | High-power alloy foil resistor and manufacturing method thereof |
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