CN115133895B - Heterogeneous integrated suspension line high-pass filter - Google Patents
Heterogeneous integrated suspension line high-pass filter Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
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Abstract
The invention relates to the technical field of microwave electronic components and discloses a heterogeneous integrated suspension line high-pass filter, which comprises a ceramic substrate, a first glass cover body connected to the upper surface of the ceramic substrate and a second glass cover body connected to the lower surface of the ceramic substrate, wherein the first glass cover body comprises a first cavity, the second glass cover body comprises a second cavity, the upper surface of the ceramic substrate abuts against an opening of the first cavity to form a cavity, and the lower surface of the ceramic substrate abuts against an opening of the second cavity to form a cavity. The invention solves the problems of larger volume, low high-density integration level, poor out-of-band inhibition performance of the near end and the like in the prior art.
Description
Technical Field
The invention relates to the technical field of microwave electronic components, in particular to a heterogeneous integrated suspension line high-pass filter.
Background
The microwave filter plays a role in signal filtering in the microwave integrated circuit, and compared with the LC high-pass filter, the suspension line high-pass filter has the advantages of high Q value, low loss, good temperature characteristic and the like.
The structure of a conventional suspended line high-pass filter is shown in fig. 1, and has three layers of media: an upper air layer, a dielectric layer and a lower air layer. The heights of the upper air layer and the lower air layer are H1 and H2 respectively, the middle part is a dielectric substrate with the thickness H and the relative dielectric constant epsilon r, and W represents the width of the effective air cavity. The conventional suspended strip line high-pass filter is realized by printing a conductor on a dielectric plate, realizing the series capacitance of the high-pass filter by adopting metal patterns with double-sided overlapped layout, realizing the parallel inductance by using a ground high-impedance line and then embedding a dielectric substrate in a metal shell. The disadvantages of this structure are evident: due to the metal cavity, a fastening structure is generally required to be designed, the miniaturization of the volume is difficult to realize, and taking a traditional suspension line high-pass filter of 6 to 18GHz as an example, the typical volume of the traditional suspension line high-pass filter reaches 47mm multiplied by 20mm multiplied by 8.6mm, so that the high-density integration application requirement is difficult to meet.
Although the high-pass filter realized by adopting the chip technology has a small volume, the near-end out-of-band rejection is difficult to meet the use requirement in a broadband radio frequency communication system, and the rejection is within 10dB at a position deviated from 1GHz (the rejection is usually required to be more than 35dBc at the position deviated from 1GHz of the sideband).
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a heterogeneous integrated suspension line high-pass filter, which solves the problems of large volume, low high-density integration level, poor near-end out-of-band rejection performance and the like in the prior art.
The technical scheme adopted by the invention for solving the problems is as follows:
the utility model provides a heterogeneous integrated suspension line high pass filter, includes ceramic substrate, connect in the first glass lid of ceramic substrate upper surface, connect in the second glass lid of ceramic substrate lower surface, first glass lid includes first cavity, the second glass lid includes the second cavity, the ceramic substrate upper surface keeps out the opening of first cavity constitutes a cavity, the ceramic substrate lower surface keeps out the opening of second cavity constitutes a cavity.
As a preferred technical solution, the first glass cover further includes a first upper bonding bump, a first lower bonding bump, a first glass enclosure frame disposed above the ceramic substrate, and a first glass cover plate disposed above the first glass enclosure frame, wherein a lower surface of the first glass cover plate is connected to an upper surface of the first glass enclosure frame through the first upper bonding bump, an upper surface of the ceramic substrate is connected to a lower surface of the first glass enclosure frame through the first lower bonding bump, and the first cavity is disposed between the lower surface of the first glass cover plate and the upper surface of the ceramic substrate; the second glass cover body further comprises a second upper bonding bump, a second lower bonding bump, a second glass surrounding frame and a second glass cover plate, the second glass surrounding frame is arranged below the ceramic substrate, the second glass cover plate is arranged below the second glass surrounding frame, the lower surface of the ceramic substrate is connected with the upper surface of the second glass surrounding frame through the second upper bonding bump, the lower surface of the second glass surrounding frame is connected with the second glass cover plate through the second lower bonding bump, and the second cavity is formed between the lower surface of the ceramic substrate and the second glass cover plate.
As a preferred technical solution, the first upper bonding bump, the first lower bonding bump, the second upper bonding bump, and the second lower bonding bump are all ball structures made of gold.
As a preferred technical solution, the first glass cover plate includes a first cover plate glass body, a first cover plate upper whole metal layer connected to an upper surface of the first cover plate glass body, and a first cover plate lower whole metal layer connected to a lower surface of the first cover plate glass body, the first cover plate glass body includes a first cover plate TGV metalized through hole, the first cover plate upper whole metal layer and the first cover plate lower whole metal layer are respectively connected to two ends of the first cover plate TGV metalized through hole, and two side edges of the first glass cover plate are respectively provided with a first notch and a second notch.
As a preferred technical scheme, first glass encloses the frame include first enclose the frame glass body, connect in first enclose frame glass body upper surface first enclose frame go up whole metal level, connect in first enclose frame glass body lower surface first enclose whole metal level under the frame, first enclose the frame glass body include first enclose frame TGV metallized through hole, first enclose frame go up whole metal level first enclose under the frame whole metal level connect respectively in first both ends of enclosing frame TGV metallized through hole, first glass encloses frame both sides edge and is equipped with third breach, fourth breach respectively.
As a preferable technical solution, the second glass cover plate includes a second cover plate glass body, a second cover plate upper whole metal layer connected to an upper surface of the second cover plate glass body, and a second cover plate lower whole metal layer connected to a lower surface of the second cover plate glass body, the second cover plate glass body includes a second cover plate TGV metalized through hole, and the second cover plate upper whole metal layer and the second cover plate lower whole metal layer are respectively connected to two ends of the second cover plate TGV metalized through hole.
As a preferred technical scheme, the second glass encloses the frame and includes that the second encloses the frame glass body, connect in the second of frame glass body upper surface encloses the whole metal level on the frame, connect in the second of frame glass body lower surface encloses whole metal level under the frame, the second encloses the frame glass body and includes that the second encloses frame TGV metallized through hole, the second encloses whole metal level on the frame, the second encloses whole metal level under the frame and connect respectively in the second encloses the both ends of frame TGV metallized through hole.
As a preferable technical scheme, a TCV metalized through hole is arranged on the ceramic substrate, and the bonding positions of the first lower bonding bump and the second upper bonding bump are distributed on the outer side of the TCV metalized through hole.
As a preferred technical solution, the diameters of the first upper bonding bump, the first lower bonding bump, the second upper bonding bump and the second lower bonding bump are 70um to 80um, and the heights of the first upper bonding bump, the first lower bonding bump, the second upper bonding bump and the second lower bonding bump are 25um to 30um.
As a preferred technical solution, a front metal circuit is disposed on the upper surface of the ceramic substrate, and a back metal circuit is disposed on the lower surface of the ceramic substrate; the front metal circuit is provided with a broadside coupling area and a high-impedance line, and the back metal circuit is provided with a broadside coupling area and a high-impedance line; a 50-ohm impedance microstrip line and a gradual change transition structure for realizing impedance matching are arranged in the front metal circuit, and a defect ground structure is arranged at the lower part of the gradual change transition structure; the TCV metalized through hole is located within 40um of the high impedance line ground point.
Compared with the prior art, the invention has the following beneficial effects:
the invention realizes the suspended strip line structure by gold plating on the surface of the glass. The TGV technology is used in the glass to realize the continuity of grounding, and the gold bump ultrasonic hot pressing technology is used for integrating the glass and the dielectric substrate in a heterogeneous mode. Compared with a suspended stripline filter with a traditional structure, the micro suspended filter with the structure has the advantages of equivalent performance, and greatly reduced size and weight. Compared with a mechanical installation mode of a traditional structure, the ultrasonic hot-pressing technology used by the structure is higher in alignment precision, and the consistency of the filter is better. The invention simultaneously considers the application requirements of smaller volume, high density integration and high near-end out-of-band inhibition performance.
Drawings
FIG. 1 is a schematic diagram of a conventional suspended line high-pass filter;
FIG. 2 is a cross-sectional view of a micro-suspended high pass filter according to the present invention;
FIG. 3 is a schematic structural diagram of a first glass cover plate;
FIG. 4 is a side view of FIG. 3;
FIG. 5 is a schematic structural diagram of a first glass frame structure;
FIG. 6 is a side view of FIG. 5;
FIG. 7 is a schematic structural view of a second glass frame;
FIG. 8 is a side view of FIG. 7;
FIG. 9 is a schematic structural view of a second glass cover plate;
FIG. 10 is a side view of FIG. 9;
FIG. 11 is a plan view of a double-sided wiring ceramic substrate;
FIG. 12 is a bottom view of a double-sided wiring ceramic substrate;
FIG. 13 is a top-down perspective view of a double-sided wiring ceramic substrate;
FIG. 14 is a topological circuit diagram of a suspended line high pass filter in accordance with the present invention;
FIG. 15 is a schematic front view of a suspended line high pass filter according to the present invention;
FIG. 16 is a schematic diagram of the reverse profile of a suspended line high pass filter according to the present invention;
FIG. 17 is a schematic side view of a suspended line high pass filter according to the present invention;
fig. 18 is a frequency response curve of a suspended line high pass filter according to the present invention.
Reference numbers and corresponding part names in the drawings: 10-heterogeneous integrated suspension line high-pass filter 101-first cavity, 102-second cavity, 110-first glass cover body, 111-first glass cover plate, 112-first upper bonding bump, 113-first glass enclosure frame, 114-first lower bonding bump, 120-ceramic substrate, 123-TCV metalized through hole, 124-gradual transition structure, 125-broadside coupling region, 126-high impedance line, 127-50 ohm impedance microstrip line, 130-second glass cover body, 131-second glass cover plate, 132-second upper bonding bump, 133-second glass enclosure frame, 134-second lower bonding bump, 1110-first cover plate glass body, 1111-first cover plate upper whole metal layer, 1112-first cover plate lower whole metal layer, 1113-first cover TGV metalized through hole, 1114-first gap, 1115-second gap, 1130-first enclosure glass, 1131-first enclosure upper full metal layer, 1132-first enclosure lower full metal layer, 1133-first inner wall metal layer, 1134-first enclosure TGV metalized through hole, 1135-third gap, 1136-fourth gap, 1310-second cover glass, 1311-second cover upper full metal layer, 1312-second cover lower full metal layer, 1313-second cover TGV metalized through hole, 1330-second enclosure glass, 1331-second enclosure upper full metal layer, 1332-second enclosure lower full metal layer, 3-second inner wall metal layer, tg1334-second enclosure TGV metalized through hole.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
Example 1
As shown in fig. 1 to 18, a heterogeneous integrated suspended line high pass filter includes a ceramic substrate 120, a first glass cover 110 connected to an upper surface of the ceramic substrate 120, and a second glass cover 130 connected to a lower surface of the ceramic substrate 120, where the first glass cover 110 includes a first cavity 101, the second glass cover 130 includes a second cavity 102, an opening of the upper surface of the ceramic substrate 120, which abuts against the first cavity 101, forms a cavity, and an opening of the lower surface of the ceramic substrate 120, which abuts against the second cavity 102, forms a cavity.
As a preferred technical solution, the first glass cover 110 further includes a first upper bonding bump 112, a first lower bonding bump 114, a first glass surrounding frame 113 disposed above the ceramic substrate 120, and a first glass cover plate 111 disposed above the first glass surrounding frame 113, wherein the lower surface of the first glass cover plate 111 is connected to the upper surface of the first glass surrounding frame 113 through the first upper bonding bump 112, the upper surface of the ceramic substrate 120 is connected to the lower surface of the first glass surrounding frame 113 through the first lower bonding bump 114, and the first cavity 101 is disposed between the lower surface of the first glass cover plate 111 and the upper surface of the ceramic substrate 120; the second glass cover 130 further includes a second upper bonding bump 132, a second lower bonding bump 134, a second glass surrounding frame 133 disposed below the ceramic substrate 120, and a second glass cover plate 131 disposed below the second glass surrounding frame 133, wherein the lower surface of the ceramic substrate 120 is connected to the upper surface of the second glass surrounding frame 133 through the second upper bonding bump 132, the lower surface of the second glass surrounding frame 133 is connected to the second glass cover plate 131 through the second lower bonding bump 134, and the second cavity 102 is disposed between the lower surface of the ceramic substrate 120 and the second glass cover plate 131.
As a preferred technical solution, the first upper bonding bump 112, the first lower bonding bump 114, the second upper bonding bump 132, and the second lower bonding bump 134 are all ball structures made of gold.
As a preferred technical solution, the first glass cover plate 111 includes a first cover plate glass body 1110, a first cover plate upper whole metal layer 1111 connected to the upper surface of the first cover plate glass body 1110, and a first cover plate lower whole metal layer 1112 connected to the lower surface of the first cover plate glass body 1110, the first cover plate glass body 1110 includes a first cover plate TGV metalized through hole 1113, the first cover plate upper whole metal layer 1111 and the first cover plate lower whole metal layer 1112 are respectively connected to two ends of the first cover plate TGV metalized through hole 1113, and two sides of the first glass cover plate 111 are respectively provided with a first notch 1114 and a second notch 1115.
As a preferred technical solution, the first glass enclosure frame 113 includes a first enclosure frame glass body 1130, a first enclosure frame upper whole metal layer 1131 connected to an upper surface of the first enclosure frame glass body 1130, and a first enclosure frame lower whole metal layer 1132 connected to a lower surface of the first enclosure frame glass body 1130, where the first enclosure frame glass body 1130 includes a first enclosure frame TGV metalized through hole 1134, the first enclosure frame upper whole metal layer 1131 and the first enclosure frame lower whole metal layer 1132 are respectively connected to two ends of the first enclosure frame TGV metalized through hole 1134, and both sides of the first glass enclosure frame 113 are respectively provided with a third gap 1135 and a fourth gap 1136.
As a preferable technical solution, the second glass cover 131 includes a second cover glass 1310, a second cover upper whole metal layer 1311 connected to an upper surface of the second cover glass 1310, and a second cover lower whole metal layer 1312 connected to a lower surface of the second cover glass 1310, the second cover glass 1310 includes a second cover TGV metalized via 1313, and the second cover upper whole metal layer 1311 and the second cover lower whole metal layer 1312 are respectively connected to two ends of the second cover TGV metalized via 1313.
As a preferable technical solution, the second glass surrounding frame 133 includes a second surrounding frame glass body 1330, a second surrounding frame upper whole metal layer 1331 connected to an upper surface of the second surrounding frame glass body 1330, and a second surrounding frame lower whole metal layer 1332 connected to a lower surface of the second surrounding frame glass body 1330, the second surrounding frame glass body 1330 includes a second surrounding frame TGV metalized through hole 1334, and the second surrounding frame upper whole metal layer 1331 and the second surrounding frame lower whole metal layer 1332 are respectively connected to two ends of the second surrounding frame TGV metalized through hole 1334.
As a preferable technical solution, the ceramic substrate 120 is provided with a TCV metalized through hole 123, and the bonding positions of the first lower bonding bump 114 and the second upper bonding bump 132 are distributed outside the TCV metalized through hole 123.
As a preferred technical solution, the diameters of the first upper bonding bump 112, the first lower bonding bump 114, the second upper bonding bump 132, and the second lower bonding bump 134 are 70um to 80um, and the heights of the first upper bonding bump 112, the first lower bonding bump 114, the second upper bonding bump 132, and the second lower bonding bump 134 are 25um to 30um.
As a preferable technical solution, a front metal circuit 121 is disposed on the upper surface of the ceramic substrate 120, and a back metal circuit 122 is disposed on the lower surface of the ceramic substrate 120; a broadside coupling region 125 and a high-impedance line 126 are arranged on the front metal circuit 121, and a broadside coupling region 125 and a high-impedance line 126 are arranged on the back metal circuit 122; a 50-ohm impedance microstrip line 127 and a gradual change transition structure 124 for realizing impedance matching are arranged in the front metal circuit 121, and a defect ground structure is arranged at the lower part of the gradual change transition structure 124; the TCV metalized via 123 is located within 40um of the ground point of the high impedance line 126.
The invention realizes the suspended strip line structure by gold plating on the surface of the glass. The inside of the glass realizes the grounding continuity by using a TGV technology, and the glass and the dielectric substrate are integrated in a heterogeneous mode by using a gold bump ultrasonic hot-pressing technology. Compared with a suspended stripline filter with a traditional structure, the micro suspended filter with the structure has the advantages of equivalent performance, and greatly reduced size and weight. Compared with a mechanical installation mode of a traditional structure, the ultrasonic hot-pressing technology used by the structure is higher in alignment precision, and the consistency of the filter is better. The invention simultaneously meets the application requirements of smaller volume, high density integration and high near-end out-of-band inhibition performance.
Example 2
As shown in fig. 1 to fig. 18, as a further optimization of embodiment 1, on the basis of embodiment 1, the present embodiment further includes the following technical features:
the invention aims to solve the problems of large size and weight of a suspended strip line filter with a traditional structure and realize a miniaturized high-suppression distributed high-pass filter.
The micro-suspension high-pass filter based on TGV realizes a suspension strip line structure by gold plating the surface of glass, and achieves the effect of reducing the volume of the suspension strip line filter.
Fig. 2 shows a cross-sectional view of a TGV-based micro-suspended high-pass filter proposed by the present invention. The present invention achieves the electromagnetic shielding effect achievable with conventional metal chambers by gold plating the glass surface and using TGV technology to strengthen the grounding of the glass surface.
The heterogeneous integrated suspension line high-pass filter 10 is a glass cavity sandwich structure and is composed of a first glass cover body 110, a first cavity 101, a second glass cover body 130, a second cavity 102 and a double-sided wiring ceramic substrate 120 positioned between the first cavity and the second cavity. The double-sided wiring ceramic substrate 120 is supported and suspended between the first cavity 101 and the second cavity 102 by gold bonding balls (a first upper bonding bump 112 and a second upper bonding bump 132) arranged around the substrate. The first glass cover 110 and the upper surface of the ceramic substrate 120 form a first cavity 101, the second glass cover 130 and the lower surface of the ceramic substrate 120 form a second cavity 102, and the first cavity 101, the second cavity 102 and the double-sided ceramic substrate 120 realize a suspension structure.
Further, the first glass cover 110 is composed of a first glass cover 111, a first glass frame 113 and a gold bonding ball (a first upper bonding bump 112), as shown in fig. 3 to 6, the diameter range of the gold bonding ball is 70 to 80um, the height of the gold bonding ball is 25 to 30um, and the distance between the gold bonding balls is smaller than one fourth of the wavelength of the filter and is as small as possible, so as to ensure the electromagnetic shielding effect. The first glass cover plate 111 is composed of a glass body 1110, an upper whole metal layer 1111 and a lower whole metal layer 1112, the upper whole metal layer 1111 and the lower whole metal layer 1112 are interconnected through a first cover plate TGV metalized through hole 1113, the hole diameter range of the TGV through hole is 100um +/-10 um, under the condition of good contact, the resistance between the upper whole metal layer 1111 and the lower whole metal layer 1112 should be in the magnitude level of a few ohms at zero or even smaller, and the guarantee of good electrical connectivity is the basis for realizing a good-function first cavity 101. The TGV via 1113 is arranged around the glass body 1110, the hole diameter is 100um + -10 um, the TGV via 1113 and the upper and lower metal layers (the upper whole metal layer 1111 and the lower whole metal layer 1112) can be obtained by laser induced punching, corrosion punching, sputtering metallization and other processes. Notches 1114 and 1115 are formed on both sides of the first cover glass 111 for exposing input/output ports of the double-sided wiring substrate for bonding with gold wires during use.
Further, the first glass enclosure 113 is composed of a glass body 1130, an upper entire surface metal layer 1131, a lower entire surface metal layer 1132, and a first inner wall metal layer 1133, the upper entire surface metal layer 1131 and the lower entire surface metal layer 1132 are electrically connected through TGV through holes 1134, the first inner wall metal layer 1133 is electrically connected with the upper entire surface metal layer 1131 and the lower entire surface metal layer 1132 through continuous metal layers, and the resistance between the upper entire surface metal layer, the inner wall metal layer, and the lower entire surface metal layer should be in the magnitude order of several ohms or even smaller, so as to ensure good electrical connectivity, which is the basis for realizing a good function of the first cavity 101. The implementation process of the TGV through holes and the metal layer is the same as the first glass cover plate 111. The first glass frame 113 has a third gap 1135 and a fourth gap 1136 on two sides thereof for exposing the input/output ports of the double-sided wiring substrate (the ceramic substrate 120) for bonding with gold wires during integration.
Further, the second glass cover 130 is integrated by the second glass cover plate 131, the second glass frame 133 and the second lower bonding bumps 134 through an ultrasonic thermocompression bonding technique. As shown in fig. 7 to 10, the second glass cover plate 131 is composed of a glass body 1310, an upper entire metal layer 1311, and a lower entire metal layer 1312. The upper full-face metal layer 1311 and the lower full-face metal layer 1312 are electrically interconnected through the second cover plate TGV metalized through hole 1313, the resistance between the upper full-face metal layer, the inner wall metal layer and the lower full-face metal layer should be in the magnitude order of a few tenths of ohms or even smaller, and good electrical connectivity is guaranteed to be the basis for realizing the second cavity 102 with good functions. The implementation process of the TGV through holes and the metal layer is the same as that of the first glass cover plate 111.
Further, the second glass surrounding frame 133 is composed of a glass body 1330, an upper whole metal layer 1331, a lower whole metal layer 1332 and a second inner wall metal layer 1333, the upper whole metal layer 1331 and the lower whole metal layer 1332 are electrically connected through a second surrounding frame TGV metallization through hole 1334, the second inner wall metal layer 1333 is electrically connected with the upper whole metal layer 1331 and the lower whole metal layer 1332 through continuous metal layers, the resistance between the upper whole metal layer, the inner wall metal layer and the lower whole metal layer should be in the order of several ohms or even smaller, and it is the basis for realizing the second cavity 102 with good function to ensure good electrical connectivity. The implementation process of the TGV through holes and the metal layer is the same as the first glass cover plate 111.
Further, as shown in fig. 11 to 13, the double-sided wired ceramic substrate 120 has a front-side metal circuit 121 and a back-side metal circuit 122 on both sides. In order to realize the high-pass filtering function, capacitors and inductors are connected in series between the input and the output of the filter, and the topological circuit of the filter is shown in fig. 14. The parallel inductance in the circuit is realized by a high-impedance line 126 with one end grounded, the series capacitance in the circuit is realized by broadside coupling areas 125 of upper and lower layers of the dielectric substrate, metal around the front and back surfaces of the dielectric substrate is used as a reference ground of the filter, and the reference ground realizes the interconnection of the upper and lower layers of the ground through a metalized hole 123. The metallized holes 123 are designed to avoid bonding areas with the first and second glass covers 110, 130.
For practical use, there are other conventional suspended line filters that use connectors as input and output connectors. The micro-suspension high-pass filter does not totally close the air cavity, a 50-ohm impedance microstrip line and a 50-ohm impedance microstrip line 127 are exposed at the input and the output to be used as ports, the line width of the 50-ohm impedance microstrip line 127 is thinner due to the fact that the dielectric constants of a suspension strip line and the microstrip line are different, the gradual change transition structure 124 conducts transition among different line widths, and good matching is achieved. The back surface of the tapered transition structure 124 should not have a ground plane, and the back surface of the 50-ohm impedance microstrip line 127 should have a ground plane and be well connected to the surrounding ground plane. The lower portion of the over-graded structure 124 has a defected ground structure (i.e., no complete ground plane).
The first glass cover body 110, the second glass cover body 130 and the dielectric substrate (the ceramic substrate 120) are electrically connected and electromagnetically shielded through the gold balls (the first lower bonding bump 114 and the second upper bonding bump 132) by using ultrasonic hot pressing, so as to form a whole microsuspension high-pass filter. After bonding is completed, the resistance between the upper and lower surfaces of the high pass filter is measured and should be in the order of a few tenths of ohms or even less. The final finished micro-suspension filter profile is shown in fig. 15-17.
In the invention, the distance between two adjacent salient points is smaller than a quarter wavelength corresponding to the center frequency of the filter.
The invention realizes the suspended strip line structure by gold plating on the surface of the glass. The inside of the glass realizes the grounding continuity by using a TGV technology, and the glass and the dielectric substrate are integrated in a heterogeneous mode by using a gold bump ultrasonic hot-pressing technology. Compared with the suspended strip line filter with the traditional structure, the micro suspended filter realized by the structure has equivalent performance, and the size and the weight can be greatly reduced. Compared with a mechanical installation mode of a traditional structure, the ultrasonic hot-pressing technology used by the structure is higher in alignment precision, and the consistency of the filter is better. The invention simultaneously meets the application requirements of smaller volume, high density integration and high near-end out-of-band inhibition performance.
By adopting the micro-suspension high-pass filter structure provided by the invention, a topological circuit shown in figure 14 is used for designing a micro-suspension high-pass filter with the frequency of 6GHz to 18GHz. The dielectric substrate of the filter is made of alumina ceramic having a relative dielectric constant of 9.9 and a thickness of 0.127mm, and the pattern is designed as shown in fig. 13. The finally realized micro-suspension high-pass filter has the size of 8.5mm multiplied by 5mm multiplied by 1.6mm, the frequency response curve is shown in fig. 18, the in-band insertion loss of the filter is smaller than 1dB and the out-of-band rejection of more than 35dB at the position of 5GHz as can be seen by the transmission coefficient S (2, 1) curve of the frequency response, and the reflection coefficient in the pass band of the filter is less than-17 dB as can be seen by the reflection coefficient S (1, 1) curve of the frequency response.
The invention can also be applied to miniaturization application of band-pass and band-stop filters.
As described above, the present invention can be preferably realized.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are merely for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element may be in an orientation as much as possible.
All features disclosed in all embodiments in this specification, or all methods or process steps implicitly disclosed, may be combined and/or expanded, or substituted, in any way, except for mutually exclusive features and/or steps.
The foregoing is only a preferred embodiment of the present invention, and the present invention is not limited thereto in any way, and any simple modification, equivalent replacement and improvement made to the above embodiment within the spirit and principle of the present invention still fall within the protection scope of the present invention.
Claims (9)
1. The heterogeneous integrated suspension line high-pass filter is characterized by comprising a ceramic substrate (120), a first glass cover body (110) connected to the upper surface of the ceramic substrate (120), and a second glass cover body (130) connected to the lower surface of the ceramic substrate (120), wherein the first glass cover body (110) comprises a first cavity (101), the second glass cover body (130) comprises a second cavity (102), the upper surface of the ceramic substrate (120) abuts against an opening of the first cavity (101) to form a cavity, and the lower surface of the ceramic substrate (120) abuts against an opening of the second cavity (102) to form a cavity;
the first glass cover body (110) further comprises a first upper bonding bump (112), a first lower bonding bump (114), a first glass surrounding frame (113) arranged above the ceramic substrate (120), and a first glass cover plate (111) arranged above the first glass surrounding frame (113), wherein the lower surface of the first glass cover plate (111) is connected with the upper surface of the first glass surrounding frame (113) through the first upper bonding bump (112), the upper surface of the ceramic substrate (120) is connected with the lower surface of the first glass surrounding frame (113) through the first lower bonding bump (114), and the first cavity (101) is arranged between the lower surface of the first glass cover plate (111) and the upper surface of the ceramic substrate (120); the second glass cover body (130) further comprises a second upper bonding bump (132), a second lower bonding bump (134), a second glass surrounding frame (133) arranged below the ceramic substrate (120) and a second glass cover plate (131) arranged below the second glass surrounding frame (133), the lower surface of the ceramic substrate (120) is connected with the upper surface of the second glass surrounding frame (133) through the second upper bonding bump (132), the lower surface of the second glass surrounding frame (133) is connected with the second glass cover plate (131) through the second lower bonding bump (134), and the second cavity (102) is formed between the lower surface of the ceramic substrate (120) and the second glass cover plate (131).
2. The hetero-integrated suspended line high pass filter of claim 1, wherein the first upper bonding bump (112), the first lower bonding bump (114), the second upper bonding bump (132), and the second lower bonding bump (134) are all spherical structures made of gold.
3. The heterogeneous integrated suspension line high pass filter according to claim 2, wherein the first glass cover plate (111) comprises a first cover plate glass body (1110), a first cover plate upper full-surface metal layer (1111) connected to the upper surface of the first cover plate glass body (1110), and a first cover plate lower full-surface metal layer (1112) connected to the lower surface of the first cover plate glass body (1110), the first cover plate glass body (1110) comprises a first cover plate TGV metalized via (1113), the first cover plate upper full-surface metal layer (1111) and the first cover plate lower full-surface metal layer (1112) are respectively connected to two ends of the first cover plate TGV metalized via (1113), and a first notch (1114) and a second notch (1115) are respectively arranged on two sides of the first glass cover plate (111).
4. The heterogeneous integrated suspension line high-pass filter according to claim 3, wherein the first glass frame (113) comprises a first frame glass body (1130), a first frame upper whole metal layer (1131) connected to the upper surface of the first frame glass body (1130), and a first frame lower whole metal layer (1132) connected to the lower surface of the first frame glass body (1130), the first frame glass body (1130) comprises first frame TGV metalized through holes (1134), the first frame upper whole metal layer (1131) and the first frame lower whole metal layer (1132) are respectively connected to two ends of the first frame TGV metalized through holes (1134), and both sides of the first glass frame (113) are respectively provided with a third gap (1135) and a fourth gap (1136).
5. The heterogeneous integrated suspension line high pass filter according to claim 4, wherein the second glass cover plate (131) comprises a second cover plate glass body (1310), a second cover plate upper full metal layer (1311) connected to the upper surface of the second cover plate glass body (1310), and a second cover plate lower full metal layer (1312) connected to the lower surface of the second cover plate glass body (1310), the second cover plate glass body (1310) comprises a second cover plate TGV metalized via (1313), and the second cover plate upper full metal layer (1311) and the second cover plate lower full metal layer (1312) are respectively connected to both ends of the second cover plate TGV metalized via (1313).
6. The isomerically integrated suspended line high pass filter of claim 5, wherein a second glass enclosure frame (133) comprises a second enclosure frame glass body (1330), a second enclosure frame upper full metal layer (1331) connected to an upper surface of the second enclosure frame glass body (1330), a second enclosure frame lower full metal layer (1332) connected to a lower surface of the second enclosure frame glass body (1330), the second enclosure frame glass body (1330) comprising second enclosure frame TGV metalized via holes (1334), the second enclosure frame upper full metal layer (1331), the second enclosure frame lower full metal layer (1332) being connected to both ends of the second enclosure frame TGV metalized via holes (1334), respectively.
7. The isomerically integrated suspended line high pass filter of claim 6, wherein the ceramic substrate (120) is provided with a TCV metalized via (123), and bonding locations of the first lower bonding bump (114) and the second upper bonding bump (132) are distributed outside the TCV metalized via (123).
8. The suspension line high-pass filter of claim 7, wherein the diameters of the first upper bonding bump (112), the first lower bonding bump (114), the second upper bonding bump (132) and the second lower bonding bump (134) are 70um to 80um, and the heights of the first upper bonding bump (112), the first lower bonding bump (114), the second upper bonding bump (132) and the second lower bonding bump (134) are 25um to 30um.
9. The heterogeneous integrated suspended line high pass filter according to any of claims 1 to 8, wherein the upper surface of the ceramic substrate (120) is provided with a front metal circuit (121), and the lower surface of the ceramic substrate (120) is provided with a back metal circuit (122); a broadside coupling region (125) and a high-impedance line (126) are arranged on the front metal circuit (121), and a broadside coupling region (125) and a high-impedance line (126) are arranged on the back metal circuit (122); a 50-ohm impedance microstrip line (127) and a gradual change transition structure (124) for realizing impedance matching are arranged in the front metal circuit (121), and a defect ground structure is arranged at the lower part of the gradual change transition structure (124); the TCV metalized via (123) is located within 40um of the high impedance line (126) ground point.
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| CN101784889A (en) * | 2007-05-18 | 2010-07-21 | 生命安全销售股份公司 | The thermally insulating ceramic substrates that is used for gas sensor |
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| WO2007042336A2 (en) * | 2005-10-14 | 2007-04-19 | Stmicroelectronics S.R.L. | Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device |
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| CN101784889A (en) * | 2007-05-18 | 2010-07-21 | 生命安全销售股份公司 | The thermally insulating ceramic substrates that is used for gas sensor |
| CN112340694A (en) * | 2020-11-03 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
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