CN115117137A - Electroluminescent device, display panel and display device - Google Patents

Abstract

Embodiments of the present application provide an electroluminescent device, a display panel, and a display device. The electroluminescent device includes: at least two stacked light-emitting layers; a charge generation layer, located between two adjacent light-emitting layers, including stacked hole-generating layers and electron-generating layers; wherein, the host and guest of the hole-generating layers are doped The impurity ratio is the first doping ratio, the host-guest doping ratio of the electron generating layer is the second doping ratio, and the ratio between the first doping ratio and the second doping ratio is not less than 3:1 and not more than 20: 1. In the embodiment of the present application, by optimizing the doping ratio of the charge generating layer in the stacked electroluminescent device, specifically, controlling the host-guest doping ratio of the hole-generating layer to be greater than the host-guest doping ratio of the electron generating layer, it is beneficial to better The driving voltage of each pixel in the light-emitting layer is matched, and the phenomenon of pixel crosstalk is alleviated.

Description

Electroluminescent device, display panel and display device

technical field

The present application relates to the field of display technology, and in particular, the present application relates to an electroluminescent device, a display panel and a display device.

Background technique

Organic light-emitting diodes, or OLEDs, are considered to be an ideal next-generation display technology to replace liquid crystal technology due to their inherent advantages, such as self-luminescence, high brightness, fast response, wide color gamut, and the ability to make flexible display devices.

Limited by the characteristics of existing luminescent materials, existing single-layer electroluminescent devices cannot meet customer demands. pregnancy.

However, the stacked electroluminescent device is prone to the phenomenon of pixel crosstalk, which affects the display effect.

SUMMARY OF THE INVENTION

Aiming at the shortcomings of the prior art, the present application proposes an electroluminescent device, a display panel and a display device to solve the technical problem that the layered electroluminescent device is prone to pixel crosstalk in the prior art.

In a first aspect, an embodiment of the present application provides an electroluminescent device, comprising: at least two stacked light-emitting layers;

The charge generation layer, located between two adjacent light-emitting layers, includes a stacked hole generation layer and an electron generation layer;

The host-guest doping ratio of the hole generating layer is the first doping ratio, the host-guest doping ratio of the electron generating layer is the second doping ratio, and the ratio between the first doping ratio and the second doping ratio Not less than 3:1 and not more than 20:1.

Optionally, the host material of the hole generating layer includes at least one of the following compounds:

Optionally, the guest material of the hole-generating layer includes at least one of the following compounds:

Optionally, the host material of the electron generating layer includes at least one of the following compounds:

Optionally, the light-emitting layer includes: a first sub-pixel and a second sub-pixel;

The hole generation layer includes: a first hole generation substructure corresponding to the first subpixel, and a second hole generation substructure corresponding to the second subpixel;

The driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first hole-generating substructure is higher than that of the second hole-generating substructure.

Optionally, the host-guest doping ratio of the first hole-generating substructure is greater than the host-guest doping ratio of the second hole-generating substructure;

And/or, there is a first separation between the first hole-generating substructure and the second hole-generating substructure.

Optionally, the first interval is not less than 2 microns.

Optionally, the light-emitting layer includes: a first sub-pixel and a second sub-pixel;

The electron generating layer includes: a first electron generating substructure corresponding to the first subpixel, and a second electron generating substructure corresponding to the second subpixel;

Wherein, the driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first electron generating sub-structure is higher than that of the second electron generating sub-structure.

Optionally, the host-guest doping ratio of the first electron generating substructure is greater than the host-guest doping ratio of the second electron generating substructure;

And/or, there is a second space between the first electron generating substructure and the second electron generating substructure.

Optionally, the second interval is not less than 2 microns.

Optionally, the light-emitting layer includes: a first sub-pixel, a second sub-pixel and a third sub-pixel;

The driving voltage of the first sub-pixel is respectively higher than the driving voltage of the second sub-pixel and the driving voltage of the third sub-pixel;

There is a third interval between the first subpixel and the second subpixel, and a fourth interval between the first subpixel and the third subpixel.

Optionally, at least one of the third interval and the fourth interval is not less than 2 microns.

In a second aspect, an embodiment of the present application provides a display panel, including: the electroluminescent device provided in the first aspect above.

In a third aspect, an embodiment of the present application provides a display device, including: the display panel provided in the above-mentioned second aspect.

The beneficial technical effects brought by the technical solutions provided in the embodiments of the present application include: by optimizing the doping ratio of the charge generating layer in the stacked electroluminescent device, specifically, controlling the host-guest doping ratio of the hole generating layer to be greater than that of the electron generating layer The host-guest doping ratio of the layer is controlled, and the ratio between the two host-guest doping ratios is controlled to be no less than 3:1 and no greater than 20:1, which is conducive to better matching the driving voltage of each pixel in the light-emitting layer and reducing the pixel. crosstalk phenomenon.

Additional aspects and advantages of the present application will be set forth in part in the following description, which will become apparent from the following description, or may be learned by practice of the present application.

Description of drawings

The above and/or additional aspects and advantages of the present application will become apparent and readily understood from the following description of embodiments taken in conjunction with the accompanying drawings, wherein:

FIG. 1 is a schematic cross-sectional structure diagram of Embodiment 1 of an electroluminescent device provided in the embodiment of the present application;

FIG. 2 is a schematic cross-sectional structure diagram of Embodiment 2 of an electroluminescent device provided in the embodiment of the present application;

FIG. 3 is a schematic cross-sectional structure diagram of Embodiment 3 of an electroluminescent device provided in the embodiment of the present application;

FIG. 4 is a schematic cross-sectional structure diagram of Embodiment 4 of an electroluminescent device provided in the embodiment of the present application;

FIG. 5 is a schematic cross-sectional structure diagram of Embodiment 5 of an electroluminescent device provided by the embodiment of the present application;

FIG. 6 is a schematic top-view structural diagram of Embodiment 5 of an electroluminescent device provided in the embodiment of the present application.

In the picture:

100-electroluminescent device;

110-light-emitting layer; 111-first sub-pixel; 112-second sub-pixel; 113-third sub-pixel;

120-charge-generating layer; 121-hole-generating layer; 121a-first hole-generating substructure; 121b-second hole-generating substructure; 122-electron-generating layer; 122a-first electron-generating substructure; 122b- the second electron generating substructure;

130-anode layer; 140-cathode layer; 150-hole transport layer; 160-electron transport layer;

10-first interval; 20-third interval; 30-fourth interval.

Detailed ways

Embodiments of the present application are described below with reference to the accompanying drawings in the present application. It should be understood that the embodiments described below in conjunction with the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of the present application, and do not limit the technical solutions of the embodiments of the present application.

It will be understood by those skilled in the art that the singular forms "a", "an", "the" and "the" as used herein can include the plural forms as well, unless expressly stated otherwise. It should be further understood that the word "comprising" used in the description of the present application means the presence of the stated features, integers, elements and/or components, but does not preclude the implementation of other features, information, data, elements supported by the technical field , components and/or combinations thereof, etc. It will be understood that when we refer to an element as being "connected" or "coupled" to another element, the one element can be directly connected or coupled to the other element, or the one element and the other element may be intervening through intervening elements Establish a connection relationship. Furthermore, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein refers to at least one of the items defined by the term, eg "A and/or B" can be implemented as "A", or as "B", or as "A and B" ".

In order to make the objectives, technical solutions and advantages of the present application clearer, the embodiments of the present application will be further described in detail below with reference to the accompanying drawings.

The research and development ideas of the present application include: in a stacked electroluminescent device, two adjacent light-emitting layers can be connected by a charge generating layer, that is, a single-layer device can be connected by a charge generating layer to obtain a stacked electroluminescent device. light-emitting device.

The charge-generating layer can be divided into a hole-generating layer (PCGL) and an electron-generating layer (NCGL), and its doping concentration has a decisive influence on the characteristics of the product. It has been proved by experiments that optimizing the doping concentration in the charge generation layer can perfectly solve the problems of high device voltage and poor product life. However, material energy level matching and charge generation layers have different effects on light-emitting devices of different colors, which leads to a decrease in voltage during device optimization, and a significant increase in crosstalk between pixels.

Specifically, the driving voltage of the blue sub-pixel that emits blue light in the three basic colors of red, green and blue is relatively high, which causes the color ratio of the stacked device to be unbalanced, and the image quality display is abnormal. PMIC (Power Management IC, power management integrated circuit) The driving voltage is insufficient, and the reserved amount of product voltage is not enough. In addition, it is customary for the charge generation layers (PCGL & NCGL) in the stacked device to be of the same material and shared by three RGB color sub-pixels. The guest can be made of metallic active metal materials, such as: I, II main group and lanthanide metal materials. In order to maximize the voltage gain of the stacked OLED display device, the guest concentration of the hole-generating layer or the electron-generating layer can be increased, but the guest material of the hole-generating layer and the electron material of the electron-generating layer are disordered under the effect of the electric field Therefore, as the high-voltage pixel is turned on, the low-voltage pixel will be turned on, resulting in a phenomenon of crosstalk between pixels.

Therefore, when the device structure of the charge generation layer is optimized, the voltage and electroluminescence efficiency of the three colors of RGB will change in different amplitudes, which makes the power consumption gain and crosstalk effect of such a scheme unsatisfactory.

The electroluminescent device, display panel and display device provided by the present application aim to solve the above technical problems in the prior art.

The technical solutions of the present application and how the technical solutions of the present application solve the above-mentioned technical problems will be described in detail below with specific examples. It should be noted that the following embodiments may refer to, learn from, or combine with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be described repeatedly.

The embodiment of the present application provides an electroluminescent device 100 , and a schematic structural diagram of the electroluminescent device 100 is shown in FIG. The charge generation layer 120 .

The charge generation layer 120 includes a stacked hole generation layer 121 and an electron generation layer 122 .

The host-guest doping ratio of the hole generating layer 121 is the first doping ratio, the host-guest doping ratio of the electron generating layer 122 is the second doping ratio, and the difference between the first doping ratio and the second doping ratio is The ratio is not less than 3:1 and not more than 20:1.

In this embodiment, the doping concentration of the P-type charge generating layer 120 (PCGL) and the doping concentration of the N-type charge generating layer 120 (NCGL) in the charge generating layer 120 in the stacked electroluminescent device 100 are set differently, Specifically, the host-guest doping ratio of the hole-generating layer 121 is controlled to be greater than the host-guest doping ratio of the electron-generating layer 122, and the difference between the two host-guest doping ratios (ie, the first doping ratio and the second doping ratio) is controlled. The ratio is not less than 3:1 and not more than 20:1, which is conducive to better matching the driving voltage of each pixel in the light emitting layer 110 and reducing the phenomenon of pixel crosstalk.

The host-guest doping ratio refers to the content ratio of the host material to the guest material.

In some possible embodiments, the electroluminescent device 100 further includes a stacked anode layer 130 and a cathode layer 140, and a hole transport layer 150 located on the side of the anode layer 130 close to the cathode layer 140, and a hole transport layer 150 located on the cathode layer 140 close to the anode layer For the electron transport layer 160 on the side of 130 , all the light-emitting layers 110 are sequentially stacked between the hole transport layer 150 and the electron transport layer 160 . The hole generation layer 121 in each charge generation layer 120 is closer to the cathode layer 140 than the electron generation layer 122 . Similarly, the electron generation layer 122 in each charge generation layer 120 is closer to the hole generation layer 121 than the hole generation layer 121 . close to the anode layer 130 .

In some possible embodiments, the host material of the hole generation layer 121 includes at least one of the following compounds:

In some possible embodiments, the guest material of the hole-generating layer 121 includes at least one of the following compounds:

In some possible embodiments, the host material of the electron generating layer 122 includes at least one of the following compounds:

The research and development ideas of the present application further include that the charge generation layer 120 can be configured differently for sub-pixels with different driving voltage requirements in the light-emitting layer 110 , which is beneficial to match the energy levels of each sub-pixel of the light-emitting layer 110 . To this end, the present application provides the following two possible implementations for the electroluminescent device 100:

In a first possible implementation manner, as shown in FIG. 2 , the light-emitting layer 110 includes: a first sub-pixel 111 and a second sub-pixel 112 .

The hole-generating layer 121 includes: a first hole-generating substructure 121 a corresponding to the first sub-pixel 111 , and a second hole-generating sub-structure 121 b corresponding to the second sub-pixel 112 .

The driving voltage of the first sub-pixel 111 is higher than the driving voltage of the second sub-pixel 112, and the conductivity of the first hole-generating substructure 121a is higher than that of the second hole-generating substructure 121b.

In this embodiment, the first subpixel 111 and the second subpixel 112 are relatively speaking, the first subpixel 111 is a high driving voltage pixel, and the second subpixel 112 is a low driving voltage pixel. In the electroluminescent device 100 provided in this embodiment, the hole-generating layers 121 (ie, the P-type charge-generating layers 120 ) in the charge-generating layer 120 corresponding to the first sub-pixel 111 and the second sub-pixel 112 , respectively, are set differently. Specifically, the first hole-generating substructure 121a with higher conductivity corresponds to a high driving voltage pixel, and the second hole-generating substructure 121b with a relatively low conductivity corresponds to a low driving voltage pixel, so as to better match the light-emitting layer 110 Energy levels of sub-pixels with different driving voltages, optimizing product characteristics and power consumption benefits.

In one example, the first subpixel 111 is a blue subpixel, and the second subpixel 112 is a red subpixel or a green subpixel.

Based on the above-mentioned first possible implementation manner, in order to realize that the conductivity of the first hole generating substructure 121a is higher than that of the second hole generating substructure 121b, specifically: The host-guest doping ratio is greater than the host-guest doping ratio of the second hole-generating substructure 121b.

In this embodiment, by controlling the host-guest doping ratios in the first hole-generating substructure 121a and the second hole-generating substructure 121b, the first hole-generating substructure 121a and the second hole-generating substructure 121a are generated The conductive properties of the substructures 121b are differentiated.

Based on the above-mentioned first possible implementation manner, as shown in FIG. 4 , there is a first space 10 between the first hole generating substructure 121a and the second hole generating substructure 121b.

In this embodiment, the first spacer 10 facilitates the disconnection of the first hole-generating substructure 121a and the second hole-generating substructure 121b, which can effectively reduce the occurrence probability of crosstalk caused by the overlap of hole materials.

In some examples, the first spacing 10 is not less than 2 microns. to ensure adequate insulation.

In some examples, the first space 10 between the first hole-generating substructure 121a and the second hole-generating substructure 121b can be fabricated by shrinking the first hole-generating substructure 121a or the second hole-generating substructure The size of the opening of the mask plate 121b is formed; it can also be formed by etching after the first hole generating substructure 121a and the second hole generating substructure 121b are prepared.

It should be noted that, the light emitting layer 110 may further include a third sub-pixel 113, the driving voltage of the third sub-pixel 113 is also lower than the driving voltage of the first sub-pixel 111, and the second hole-generating substructure 121b may correspond to the third sub-pixel 113 at the same time. The second sub-pixel 112 and the third sub-pixel 113 , that is, the second sub-pixel 112 and the third sub-pixel 113 share the second hole-generating sub-structure 121 b.

In a second possible implementation manner, as shown in FIG. 3 , the light-emitting layer 110 includes: a first sub-pixel 111 and a second sub-pixel 112 .

The electron generation layer 122 includes: a first electron generation substructure 122 a corresponding to the first subpixel 111 , and a second electron generation substructure 122 b corresponding to the second subpixel 112 .

The driving voltage of the first sub-pixel 111 is higher than the driving voltage of the second sub-pixel 112, and the conductivity of the first electron generating sub-structure 122a is higher than that of the second electron generating sub-structure 122b.

In this embodiment, the first subpixel 111 and the second subpixel 112 are relatively speaking, the first subpixel 111 is a high driving voltage pixel, and the second subpixel 112 is a low driving voltage pixel. In the electroluminescent device 100 provided in this embodiment, the electron generating layers 122 (ie, the N-type charge generating layers 120 ) in the charge generating layer 120 corresponding to the first sub-pixel 111 and the second sub-pixel 112 respectively are set differently, Specifically, the first electron generating substructure 122a with higher conductivity corresponds to a high driving voltage pixel, and the second electron generating substructure 122b with a relatively low conductivity corresponds to a low driving voltage pixel, so as to better match the different driving voltages of the light emitting layer 110 Energy levels of sub-pixels, optimizing product characteristics and power consumption benefits.

In one example, the first subpixel 111 is a blue subpixel, and the second subpixel 112 is a red subpixel or a green subpixel.

Based on the above-mentioned second possible embodiment, the host-guest doping ratio of the first electron generating substructure 122a is greater than the host-guest doping ratio of the second electron generating substructure 122b.

In the present embodiment, by controlling the host-guest doping ratios in the first electron generating substructure 122a and the second electron generating substructure 122b, conduction is achieved for the first electron generating substructure 122a and the second electron generating substructure 122b Performance differentiation.

Based on the above-mentioned second possible implementation manner, as shown in FIG. 4 , there is a second space between the first electron generating substructure 122a and the second electron generating substructure 122b (not shown in the figure, please refer to the first space 10 ).

In the present embodiment, the second interval facilitates the disconnection of the first electron generating substructure 122a and the second electron generating substructure 122b, and can also effectively reduce the occurrence probability of crosstalk caused by overlapping of electronic materials.

In some examples, the second separation is not less than 2 microns. to ensure adequate insulation.

In some examples, the second space between the first electron generating substructure 122a and the second electron generating substructure 122b can be reduced by reducing the mask for preparing the first electron generating substructure 122a or the second electron generating substructure 122b The size of the opening is formed; it can also be formed by etching after the first electron generating substructure 122a and the second electron generating substructure 122b are prepared.

It should be noted that the light-emitting layer 110 may further include a third sub-pixel 113, and the driving voltage of the third sub-pixel 113 is also lower than the driving voltage of the first sub-pixel 111, and the second electron generating sub-structure 122b may simultaneously correspond to the second sub-pixel 113. The sub-pixel 112 and the third sub-pixel 113, that is, the second sub-pixel 112 and the third sub-pixel 113 share the second electron generating sub-structure 122b.

Based on at least one of the first possible implementation manner and the second possible implementation manner, the light emitting layer 110 includes: a first subpixel 111 , a second subpixel 112 and a third subpixel 113 .

The driving voltage of the first sub-pixel 111 is higher than the driving voltage of the second sub-pixel 112 and the driving voltage of the third sub-pixel 113, respectively.

As shown in FIG. 5 and FIG. 6 , there is a third interval 20 between the first subpixel 111 and the second subpixel 112 , and a fourth interval 30 between the first subpixel 111 and the third subpixel 113 .

In this embodiment, the first sub-pixel 111 , the second sub-pixel 112 and the third sub-pixel 113 may be blue sub-pixels, green sub-pixels and red sub-pixels respectively, and the configuration of the three basic colors is beneficial to the realization of the light-emitting layer 110 Full color lighting effect.

Relatively speaking, the first sub-pixel 111, the second sub-pixel 112 and the third sub-pixel 113 have a high driving voltage pixel, and both the second sub-pixel 112 and the third sub-pixel 113 have a low driving voltage. pixel.

In the electroluminescent device 100 provided in this embodiment, the second interval facilitates the disconnection between the first subpixel 111 and the second subpixel 112 , and the third interval 20 facilitates the disconnection between the first subpixel 111 and the third subpixel 113 , which can effectively reduce the probability of occurrence of crosstalk caused by overlapping of pixel materials.

In some examples, the third spacing 20 is not less than 2 microns.

In some examples, the fourth spacing 30 is not less than 2 microns.

In some examples, both the third spacing 20 and the fourth spacing 30 are not less than 2 microns.

Based on the same inventive concept, an embodiment of the present application provides a display panel, and the display panel includes: any one of the electroluminescent devices 100 provided in the foregoing embodiments.

In this embodiment, since the display panel includes any of the electroluminescent devices 100 provided in the foregoing embodiments, the implementation principles and beneficial effects thereof are similar, and will not be repeated here.

In some examples, the display panel may be a flexible panel, a curved panel, or the like.

Based on the same inventive concept, an embodiment of the present application provides a display device, and the display device includes: any one of the display panels provided in the above-mentioned embodiments.

In this embodiment, since the display device includes any one of the display panels provided in the foregoing embodiments, the implementation principles and beneficial effects thereof are similar, and are not repeated here.

In some examples, the display device may include a cell phone, a tablet computer, a mobile terminal, an electronic book, an electronic photo frame, and the like.

By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

1. In the stacked electroluminescent device 100, the doping concentration of the charge generation layer 120 of the P-type charge generation layer 120 (PCGL) and the doping concentration of the N-type charge generation layer 120 (NCGL) are set differently. The host-guest doping ratio of the hole-generating layer 121 is greater than the host-guest doping ratio of the electron-generating layer 122, and the ratio between the two host-guest doping ratios (ie, the first doping ratio and the second doping ratio) is controlled to be not less than The ratio of 3:1 and not more than 20:1 is beneficial to better match the driving voltage of each pixel in the light emitting layer 110 and reduce the phenomenon of pixel crosstalk.

2. The hole-generating layers 121 (ie, the P-type charge-generating layers 120 ) in the charge-generating layer 120 corresponding to the first sub-pixel 111 and the second sub-pixel 112 respectively are set differently, specifically, the first sub-pixel with higher conductivity. A hole-generating substructure 121a corresponds to a high driving voltage pixel, and a second hole-generating substructure 121b with relatively low conductivity corresponds to a low driving voltage pixel, so as to better match the energy levels of the light-emitting layer 110 with different driving voltage sub-pixels. Optimize product features and power benefits.

3. By controlling the host-guest doping ratios in the first hole-generating substructure 121a and the second hole-generating substructure 121b, conduction is achieved for the first hole-generating substructure 121a and the second hole-generating substructure 121b Performance differentiation.

4. The first spacer 10 facilitates the disconnection of the first hole-generating substructure 121a from the second hole-generating substructure 121b, which can effectively reduce the occurrence probability of crosstalk caused by the overlap of hole materials.

5. The electron generating layers 122 (ie the N-type charge generating layers 120 ) in the charge generating layer 120 corresponding to the first sub-pixel 111 and the second sub-pixel 112 respectively are set differently, specifically, the first and second sub-pixels 111 with higher conductivity are differentiated. The electron generating substructure 122a corresponds to a high driving voltage pixel, and the second electron generating substructure 122b with relatively low conductivity corresponds to a low driving voltage pixel, so as to better match the energy levels of the sub-pixels with different driving voltages of the light-emitting layer 110 and optimize product characteristics and power gains.

6. By controlling the host-guest doping ratios in the first electron generating substructure 122a and the second electron generating substructure 122b, the conductive properties of the first electron generating substructure 122a and the second electron generating substructure 122b are differentiated.

7. The second interval facilitates the disconnection of the first electron generating substructure 122a from the second electron generating substructure 122b, and can also effectively reduce the occurrence probability of crosstalk caused by overlapping of electronic materials.

8. The second interval facilitates the disconnection of the first sub-pixel 111 and the second sub-pixel 112, and the third interval 20 facilitates the disconnection of the first sub-pixel 111 and the third sub-pixel 113, which can effectively reduce the factor of pixel material overlap The probability of occurrence of crosstalk phenomenon caused.

Those skilled in the art can understand that in the description of this application, the words "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal" "," "top", "bottom", "inside", "outside", etc. indicate the direction or positional relationship, which is based on the exemplary direction or positional relationship shown in the accompanying drawings, and is for the convenience of description or simplified description of the present application Examples, rather than indicating or implying that the device or component referred to must have a particular orientation, be constructed and operate in a particular orientation, should not be construed as a limitation of the present application.

The terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first", "second" may expressly or implicitly include one or more of that feature. In the description of this application, unless stated otherwise, "plurality" means two or more.

In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood in specific situations.

In the description of this specification, the particular features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The above are only some embodiments of the present application. It should be pointed out that for those skilled in the art, other similar implementation means based on the technical idea of the present application can be adopted without departing from the technical idea of the solution of the present application. , which also belong to the protection category of the embodiments of the present application.

Claims (14)

1. An electroluminescent device, characterized in that, comprising: at least two stacked light-emitting layers; A charge generation layer, located between two adjacent light-emitting layers, includes a stacked hole generation layer and an electron generation layer; The host-guest doping ratio of the hole generating layer is a first doping ratio, the host-guest doping ratio of the electron generating layer is a second doping ratio, and the first doping ratio is the same as the first doping ratio. The ratio between the two doping ratios is not less than 3:1 and not more than 20:1. 2. The electroluminescent device according to claim 1, wherein the host material of the hole generating layer comprises at least one of the following compounds:

3. The electroluminescent device according to claim 1, wherein the guest material of the hole generating layer comprises at least one of the following compounds:

4. The electroluminescent device according to claim 1, wherein the host material of the electron generating layer comprises at least one of the following compounds:

5. The electroluminescent device according to any one of claims 1-4, wherein the light-emitting layer comprises: a first sub-pixel and a second sub-pixel; The hole generation layer includes: a first hole generation substructure corresponding to the first subpixel, and a second hole generation substructure corresponding to the second subpixel; Wherein, the driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first hole-generating substructure is higher than that of the second hole-generating substructure. 6 . The electroluminescent device according to claim 5 , wherein the host-guest doping ratio of the first hole-generating substructure is greater than the host-guest doping ratio of the second hole-generating substructure. 7 . hybrid ratio; And/or, there is a first space between the first hole-generating substructure and the second hole-generating substructure. 7. The electroluminescent device according to claim 6, wherein the first interval is not less than 2 microns. 8. The electroluminescent device according to any one of claims 1-4, wherein the light-emitting layer comprises: a first sub-pixel and a second sub-pixel; The electron generating layer includes: a first electron generating substructure corresponding to the first subpixel, and a second electron generating substructure corresponding to the second subpixel; Wherein, the driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first electron generating sub-structure is higher than that of the second electron generating sub-structure. 9 . The electroluminescent device according to claim 8 , wherein the host-guest doping ratio of the first electron generating substructure is greater than the host-guest doping ratio of the second electron generating substructure; 10 . And/or, there is a second space between the first electron generating substructure and the second electron generating substructure. 10. The electroluminescent device according to claim 9, wherein the second interval is not less than 2 microns. 11. The electroluminescent device according to any one of claims 1-4, wherein the light-emitting layer comprises: a first sub-pixel, a second sub-pixel and a third sub-pixel; The driving voltage of the first sub-pixel is respectively higher than the driving voltage of the second sub-pixel and the driving voltage of the third sub-pixel; There is a third interval between the first subpixel and the second subpixel, and a fourth interval between the first subpixel and the third subpixel. 12. The electroluminescent device of claim 11, wherein at least one of the third interval and the fourth interval is not less than 2 microns. 13. A display panel, characterized by comprising: the electroluminescent device according to any one of the preceding claims 1-12. 14. A display device, comprising: the display panel according to claim 13.

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