CN115084334A - An LED chip structure and its manufacturing method, and electronic equipment - Google Patents

Abstract

The invention proposes an LED chip structure, a manufacturing method thereof, and an electronic device. On the basis of the conventional LED chip structure, the edge of the back metal plate is shrunk toward the center, that is, the part of the back metal plate containing the irregular crystal phase is removed. Material. The invention processes the irregular crystal phase in the conventional initial LED chip structure, effectively improves the surface flatness of the LED chip structure, improves the fit between the LED chip structure and the package body, and reduces the void rate after solid crystals. It is easy to volatilize organic pollutants in the packaging process and improve the packaging effect of the LED chip structure.

Description

An LED chip structure and its manufacturing method, and electronic equipment

technical field

The present application relates to the field of LED chip fabrication, and in particular, to an LED chip structure, a fabrication method thereof, and an electronic device.

Background technique

In the production process of LED chips, the chips are not independent one by one, but many LED chips are connected together as a whole. It is not until most of the manufacturing processes are completed that the laser cutting operation is performed to obtain individual LED chips, as shown in Figure 1. The laser is focused and irradiated onto the material, causing the surface temperature of the material to be cut to rise rapidly. The laser-heated material begins to melt, forms a liquid phase and partially vaporizes, forming a high-pressure vapor, which is ejected at extremely high speeds. At the same time, the high-concentration gas moves the liquid-phase processing material to the edge of the molten pool, forming a depression in the center of the molten pool, and the ablation effect is deepened. Since the laser cutting process is a high-temperature, high-heat, and high-speed process, irregular melting back is easy to occur after liquid phase cooling, and irregular crystal phases are easily formed at the edge of the chip, as shown in Figure 2. The existence of irregular crystal phases will cause the LED chip to not be fully attached to the package body during the packaging process, which will affect the packaging effect.

SUMMARY OF THE INVENTION

In order to solve one of the above technical problems, the present invention provides an LED chip structure, a manufacturing method thereof, and an electronic device.

A first aspect of the embodiments of the present invention provides an LED chip structure, including:

a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer,

A first conductive layer that forms ohmic contact with the first semiconductor layer, a reflective layer that forms electrical connection with the first conductive layer, a second conductive layer that forms electrical connection with the reflective layer, and an electrical connection to the second conductive layer connected electrodes, the first conductive layer, the reflective layer, the second conductive layer and the electrodes together form a first electrical connection layer,

penetrates through the first semiconductor layer and the active layer, and extends to the recess inside the second semiconductor layer,

a first insulating layer partially in contact with the surface of the first semiconductor layer and partially exposed to the outside of the second semiconductor layer, a second insulating layer covering the sidewall of the recess and the side of the first electrical connection layer, a third conductive layer partially in contact with the surface of the second insulating layer and electrically connected to the second semiconductor layer, and a substrate in contact with the third conductive layer,

the back metal plate covering the surface of the substrate,

The edge of the back metal plate shrinks toward the center, and there is no crystal phase on the surface of the back metal plate.

Preferably, the longitudinal section of the back metal plate is a trapezoid, and the lower bottom of the back metal plate is attached to the base plate.

Preferably, the back metal plate is a multi-layer metal structure.

Preferably, the back metal plate includes a first back metal layer and a second back metal layer, and the second back metal layer is wrapped on the surface of the first back metal layer.

Preferably, the first conductive layer, the second conductive layer, the third conductive layer and the electrodes are all multi-layer metal structures.

Preferably, when the substrate is a non-conductive material, the third conductive layer is a second electrical connection layer; when the substrate is conductive, the third conductive layer and the substrate together form an electrical connection layer.

A second aspect of the embodiments of the present invention provides a method for fabricating an LED chip structure. The method is applied to the fabrication of an independent initial LED chip structure obtained by cutting an LED chip board. The edge of the back metal plate of the initial LED chip structure is The surface is formed with a crystal phase protruding from the surface of the back metal plate;

The method includes:

The edge of the back metal plate in the initial LED chip structure contains the part of the material that protrudes from the surface of the back metal plate to obtain the final LED chip structure in which the edge of the back metal plate shrinks toward the center and there is no crystal phase on the surface of the back metal plate .

A third aspect of the embodiments of the present invention provides an electronic device, where the electronic device includes the LED chip structure described in the first aspect of the embodiments of the present invention.

The beneficial effects of the present invention are as follows: the LED chip structure and the manufacturing method thereof proposed by the present invention can process the irregular crystal phase in the conventional initial LED chip structure, effectively improve the surface flatness of the LED chip structure, and improve the LED chip structure. The adhesion between the structure and the package body reduces the void rate after die bonding, facilitates the volatilization of organic pollutants during the packaging process, and improves the packaging effect of the LED chip structure.

Description of drawings

The drawings described herein are used to provide further understanding of the present application and constitute a part of the present application. The schematic embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation of the present application. In the attached image:

Figure 1 is a schematic diagram of the LED chip board cutting process;

2 is a schematic structural diagram of an existing LED chip structure;

3 is a schematic structural diagram of the LED chip structure according to Embodiment 1 of the present invention;

FIG. 4 is another schematic structural diagram of the LED chip structure according to Embodiment 1 of the present invention.

Reference number:

1. The first semiconductor layer, 2, the second semiconductor layer, 3, the active layer, 4, the first conductive layer, 5, the reflective layer, 6, the second conductive layer, 7, the electrode, 8, the depression, 9, the first An insulating layer, 10, a second insulating layer, 11, a third conductive layer, 12, a substrate, 13, a back metal plate, 14, a crystal phase;

13-1, the first backside metal layer, 13-2, the second backside metal layer.

Detailed ways

In order to make the technical solutions and advantages of the embodiments of the present application more clear, the exemplary embodiments of the present application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, and Not all embodiments are exhaustive. It should be noted that the embodiments in the present application and the features of the embodiments may be combined with each other in the case of no conflict.

Example 1

Figure 2 shows an LED chip structure, the LED chip structure specifically includes:

a first semiconductor layer 1, a second semiconductor layer 2, an active layer 3 located between the first semiconductor layer 1 and the second semiconductor layer 2,

A first conductive layer 4 that forms ohmic contact with the first semiconductor layer 1 , a reflective layer 5 that forms electrical connection with the first conductive layer 4 , a second conductive layer 6 that forms electrical connection with the reflective layer 5 , and the The second conductive layer 6 forms an electrode 7 that is electrically connected, and the first conductive layer 4, the reflective layer 5, the second conductive layer 6 and the electrode 7 together form a first electrical connection layer,

penetrating through the first semiconductor layer 1 and the active layer 3 and extending to the recess 8 inside the second semiconductor layer 2,

A first insulating layer 9 partially in contact with the surface of the first semiconductor layer 1 and partially exposed to the outside of the second semiconductor layer 2 , a first insulating layer 9 covering the sidewall of the recess 8 and the side of the first electrical connection layer. Two insulating layers 10, a third conductive layer 11 partially in contact with the surface of the second insulating layer 10 and electrically connected with the second semiconductor layer 2, and a substrate 12 in contact with the third conductive layer 11,

The back metal plate 13 covering the surface of the substrate 12,

The first conductive layer 4 , the second conductive layer 6 , the third conductive layer 11 and the electrode 7 are all multi-layer metal structures. When the substrate 12 is made of non-conductive material, the third conductive layer 11 is the second electrical connection layer; when the substrate 12 is conductive, the third conductive layer 11 and the substrate 12 together form an electrical connection layer.

The above-mentioned LED chip structure is a conventional structure of the existing LED chip structure. In the conventional structure of the LED chip structure, due to the influence of high temperature, high heat and other factors during the laser cutting process, an irregular crystal phase 14 will be formed on the edge of the back metal plate 13 . Therefore, in this embodiment, the back metal plate 13 is processed on the basis of the conventional LED chip structure. Specifically, the edge of the back metal plate 13 is shrunk toward the center, that is, a part of the material containing the irregular crystal phase 14 at the edge of the back metal plate 13 is removed, as shown in FIG. 3 . Thereby, the surface flatness of the back metal plate 13 is improved, the adhesion between the back metal plate 13 and the package body is improved, the void rate after die bonding is reduced, the volatilization of organic pollutants during the packaging process is easy, and the packaging of the LED chip structure is improved. Effect.

In this embodiment, the back metal plate 13 may be covered on the substrate 12 by evaporation. The longitudinal section of the back metal plate 13 is a trapezoid, and the long lower bottom of the back metal plate 13 is attached to the base plate 12 . Due to the height difference between the middle area and the edge area of the back metal plate 13 of this structure, during the packaging process, it is helpful for the volatilization of organic pollutants in the middle area during die bonding.

Further, in this embodiment, the back metal plate 13 may be a multi-layer metal structure. This embodiment provides a back metal plate 13 with a double-layer metal structure as an example, as shown in FIG. 4 . The back metal plate 13 includes a first back metal layer 13-1 and a second back metal layer 13-2. When there is only the first back metal layer 13-1, the surface area of the first back metal layer 13-1 is small. The surface of the backside metal layer 13-1 wraps the second backside metal layer 13-2 to increase the effective area of die bonding, which can further improve the packaging effect of the LED chip structure.

Example 2

This embodiment proposes a method for fabricating an LED chip structure. For the LED chip structure, reference may be made to the content described in Embodiment 1, which will not be repeated in this embodiment. The method proposed in this embodiment is applied to the fabrication of an independent initial LED chip structure obtained by cutting an LED chip board. A crystal phase 14 protruding from the surface of the back metal plate 13 is formed on the edge surface of the back metal plate 13 of the initial LED chip structure. ;

The method includes:

The edge of the back metal plate 13 in the initial LED chip structure contains the part of the material that protrudes from the crystal phase 14 on the surface of the back metal plate 13, so that the edge of the back metal plate 13 shrinks toward the center, and there is no crystal phase on the surface of the back metal plate 13. 14. Final LED chip structure.

Specifically, in this embodiment, since the back metal plate 13 and the substrate 12 are made of two different materials, the adhesion of the bonding surface of the back metal plate 13 and the substrate 12 is relatively weak. Therefore, under the action of external mechanical force, the edge of the back metal plate 13 can be easily removed, thereby removing the crystal phase 14 on the surface of the back metal plate 13 . Of course, this embodiment does not specifically limit how to remove the material of the edge portion of the back metal plate 13, as long as the LED chip structure finally obtained in this embodiment can be realized.

Example 3

This embodiment provides an electronic device, and the electronic device includes the LED chip structure described in Embodiment 1, and details are not described herein again.

Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims (8)

1. An LED chip structure comprising:

a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer,

the first conductive layer forms ohmic contact with the first semiconductor layer, the first conductive layer forms an electrically connected reflection layer with the first conductive layer, the second conductive layer forms an electrically connected reflection layer with the reflection layer, the electrode forms an electrically connected electrode with the second conductive layer, the first conductive layer, the reflection layer, the second conductive layer and the electrode jointly form a first electrically connected layer,

a recess penetrating the first semiconductor layer and the active layer and extending into the second semiconductor layer,

a first insulating layer partially contacting the surface of the first semiconductor layer and partially exposed to the outside of the second semiconductor layer, a second insulating layer covering the side wall of the recess and one side of the first electrical connection layer, a third conductive layer partially contacting the surface of the second insulating layer and forming electrical connection with the second semiconductor layer, and a substrate contacting the third conductive layer,

a back metal plate covering the surface of the substrate,

wherein the edge of the back metal plate is shrunk toward the center, and no crystal phase exists on the surface of the back metal plate.

2. The LED chip structure of claim 1, wherein the back metal plate has a trapezoidal longitudinal cross section, and a bottom of the back metal plate is attached to the substrate.

3. The LED chip structure of claim 1, wherein said back metal plate is a multilayer metal structure.

4. The LED chip structure of claim 3, wherein the back metal plate comprises a first back metal layer and a second back metal layer, and the second back metal layer is wrapped on the surface of the first back metal layer.

5. The LED chip structure of claim 1, wherein the first, second, third and electrode layers are all multilayer metal structures.

6. The LED chip structure of claim 1, wherein when the substrate is a non-conductive material, the third conductive layer is a second electrical connection layer; when the substrate is conductive, the third conductive layer and the substrate jointly form an electric connection layer.

7. A method for manufacturing the LED chip structure according to any one of claims 1 to 6, wherein the method is applied to manufacture of an independent initial LED chip structure obtained by cutting an LED chip plate, and the edge surface of the back metal plate of the initial LED chip structure is formed with a crystalline phase protruding out of the surface of the back metal plate;

the method comprises the following steps:

and removing part of materials which are contained in the edge of the back metal plate and protrude out of the crystal phase on the surface of the back metal plate in the initial LED chip structure to obtain the final LED chip structure, wherein the edge of the back metal plate shrinks towards the center, and the crystal phase does not exist on the surface of the back metal plate.

8. An electronic device characterized in that the electronic device comprises the LED chip structure of any one of claims 1 to 6.

Images