CN115074697B - Shielding plate and chemical vapor deposition device - Google Patents
Shielding plate and chemical vapor deposition device Download PDFInfo
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- CN115074697B CN115074697B CN202210756985.5A CN202210756985A CN115074697B CN 115074697 B CN115074697 B CN 115074697B CN 202210756985 A CN202210756985 A CN 202210756985A CN 115074697 B CN115074697 B CN 115074697B
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 49
- 230000007704 transition Effects 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims description 28
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 46
- 239000007789 gas Substances 0.000 description 63
- 239000006227 byproduct Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application discloses a shielding plate and a chemical vapor deposition device; the shielding plate comprises a first shielding section, a second shielding section and a transition section, wherein the first shielding section and the second shielding section are vertically arranged, the transition section is connected with the end parts of the first shielding section and the second shielding section respectively, the first shielding section, the second shielding section and the transition section are surrounded to form an opening, the first shielding section comprises a first side edge far away from the center of the shielding plate, the second shielding section comprises a second side edge far away from the center of the shielding plate, the transition section comprises a third side edge connected with the first side edge and the second side edge, and the third side edge is arranged at an included angle with the first side edge and the second side edge; according to the application, the third side edge of the shielding plate, the first side edge and the second side edge are arranged at an included angle, so that the area of the transition section is reduced, the gap between the transition section of the shielding plate and the cavity is increased, the air flow at the transition section is increased, the density of cleaning gas at the transition section is increased, the self-cleaning speed is accelerated, and the self-cleaning time is shortened.
Description
Technical Field
The present application relates to the field of semiconductor technology, and in particular, to a shielding plate and a chemical vapor deposition apparatus.
Background
Chemical vapor deposition (Chemical VaporDeposition, abbreviated as CVD) apparatuses are widely used in the semiconductor industry for depositing various films such as silicon nitride films, amorphous silicon films, and the like.
The chemical vapor deposition device comprises a process chamber, wherein an upper electrode and a lower electrode are arranged in the process chamber, the upper electrode is connected with a power supply, the lower electrode is grounded, and a workpiece to be processed is positioned on the lower electrode. During operation, process gas (such as SiH4, NH3 and the like) enters the process chamber, is ionized, dissociated or excited into film components to be deposited under the action of an electric field, then is deposited into a film on a substrate to be processed, and finally process byproducts are pumped away to finish film coating on the substrate. Byproducts can accumulate on the side wall, the upper electrode, the lower electrode and the shielding plate of the chamber of the chemical vapor deposition device, and the byproducts accumulate too much and can be stripped at any time to fall on the substrate, so that the film forming quality of a workpiece is affected. Therefore, the chamber needs to be self-cleaned periodically. The chamber is typically cleaned with a special nitrogen fluoride gas, which is expensive and requires minimal use. Meanwhile, the self-cleaning time is too long, so that the production takt is severely restricted. Therefore, how to shorten the self-cleaning time under the premise of ensuring the cleaning effect is one of the technical problems to be solved by the technicians in the field.
Disclosure of Invention
The application provides a shielding plate and a chemical vapor deposition device, which are used for shortening the self-cleaning time of the chemical vapor deposition device.
In order to solve the above problems, the technical scheme provided by the application is as follows:
the application provides a shielding plate, which is applied to a chemical vapor deposition device, and comprises:
the first shielding section, the second shielding section and the transition section are vertically arranged, and the transition section is respectively connected with the end parts of the first shielding section and the second shielding section;
the first shielding section, the second shielding section and the transition section are surrounded to form an opening, the first shielding section comprises a first side edge far away from the center of the shielding plate, the second shielding section comprises a second side edge far away from the center of the shielding plate, the transition section comprises a third side edge connected with the first side edge and the second side edge, and the third side edge is arranged at an included angle with the first side edge and the second side edge.
In the shielding plate of the present application, the third side is a straight line, and a first angle between the third side and the first side toward the center of the shielding plate is greater than or equal to a second angle between the third side and the second side toward the center of the shielding plate.
In the shielding plate, the third side edge is arc-shaped, and the circle center of the arc-shaped is coincident with the geometric center of the shielding plate.
In the shielding plate, the edges of the opening are respectively parallel to the first side edge and the second side edge, round holes are formed in corners of the opening, and the circle centers of the round holes coincide with the vertexes of the opening.
The application also provides a chemical vapor deposition device, which comprises the shielding plate, and the chemical vapor deposition device further comprises:
a body portion including a chamber;
the lower electrode is arranged in the cavity and is used for bearing a target substrate to be formed into a film;
the shielding plate is arranged on the lower electrode, the opening is used for accommodating the target substrate, and a gap is formed between the shielding plate and the inner wall of the chamber.
In the chemical vapor deposition apparatus of the present application, the thickness of the shielding plate is less than or equal to the thickness of the target substrate in a direction perpendicular to the upper surface of the lower electrode.
In the chemical vapor deposition apparatus of the present application, an outer contour of the lower electrode is located inside the shielding plate in a plan view direction of the lower electrode.
In the chemical vapor deposition apparatus of the present application, the chemical vapor deposition apparatus further includes:
the air inlet is arranged on the upper surface of the cavity;
the air outlet is arranged on the lower surface of the cavity;
the gas entering from the gas inlet flows to the gas outlet through the gap between the shielding plate and the cavity.
In the chemical vapor deposition device, the chemical vapor deposition device further comprises a baffle plate arranged on one side of the air inlet close to the lower electrode, wherein the baffle plate is separated from the air inlet and is arranged opposite to the air inlet.
In the chemical vapor deposition device, the chemical vapor deposition device further comprises a diffusion plate arranged on one side of the baffle plate, which is close to the lower electrode, and small holes for gas to pass through are formed in the diffusion plate.
The beneficial effects are that: the application discloses a shielding plate and a chemical vapor deposition device; the shielding plate comprises a first shielding section, a second shielding section and a transition section, wherein the first shielding section and the second shielding section are vertically arranged, the transition section is respectively connected with the ends of the first shielding section and the second shielding section, the first shielding section, the second shielding section and the transition section are encircled to form an opening, the first shielding section comprises a first side edge far away from the center of the shielding plate, the second shielding section comprises a second side edge far away from the center of the shielding plate, the transition section comprises a third side edge connected with the first side edge and the second side edge, and the third side edge is arranged at an included angle with the first side edge and the second side edge; according to the application, the third side edge of the shielding plate, the first side edge and the second side edge are arranged at an included angle, so that the area of the transition section is reduced, the gap between the transition section and the cavity of the shielding plate is increased, the air flow at the transition section is increased, the density of cleaning gas at the transition section is increased, the self-cleaning speed is accelerated, and the self-cleaning time is shortened.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a top view of a first type of shield plate of the present application;
FIG. 2 is a top view of a second type of shield plate according to the present application;
FIG. 3 is a cross-sectional view of a chemical vapor deposition apparatus according to the present application.
Reference numerals illustrate:
the shielding plate 100, the first shielding section 110, the second shielding section 120, the transition section 130, the opening 140, the first side 111, the second side 121, the third side 131, the first included angle α, the second included angle β, the lower electrode 210, the target substrate 211, the chamber 212, the gas inlet 213, the gas outlet 214, the baffle 215, the diffusion plate 216, the aperture 217.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and description only, and is not intended to limit the application. In the present application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and specifically the orientation of the drawing figures; while "inner" and "outer" are for the outline of the device.
In the field of semiconductors, chemical vapor deposition devices are widely used, each chemical vapor deposition device comprises a chamber, an upper electrode and a lower electrode are arranged in the chamber, the upper electrode is connected with a power supply, the lower electrode is grounded, and a workpiece to be processed is positioned on the lower electrode. During operation, process gas (such as SiH4, NH3 and the like) enters the process chamber, is ionized, dissociated or excited into film components to be deposited under the action of an electric field, then is deposited into a film on a substrate to be processed, and finally process byproducts are pumped away to finish film coating on the substrate. Byproducts can accumulate on the side wall, the upper electrode, the lower electrode and the shielding plate of the chamber of the chemical vapor deposition device, and the byproducts accumulate too much and can be stripped at any time to fall on the substrate, so that the film forming quality of a workpiece is affected. Therefore, the chamber needs to be self-cleaned periodically.
The chamber is usually cleaned by nitrogen fluoride special gas in the industry, the nitrogen fluoride gas is introduced into the chamber from an air inlet at a constant air flow rate and reacts with byproducts attached to the shielding plate and the side wall of the chamber in the chamber, and the reacted products are pumped out from an air outlet. During the reaction of nitrogen fluoride with the by-product, it is possible to observe whether the reaction is completed through the glass window of the chamber. Since nitrogen fluoride gas is expensive, the amount of this gas to be used needs to be reduced as much as possible. Meanwhile, the self-cleaning time is too long, so that the production takt is severely restricted. The inventors of the present application have found in long-term observation and practice that the reaction time of the by-products located at the corners of the shielding plate in the chamber with the cleaning gas is long, and even if the by-products at other positions in the chamber have already reacted, the by-products remain there, so that the cleaning time is prolonged, affecting the production progress. Therefore, how to shorten the self-cleaning time under the premise of ensuring the cleaning effect is one of the technical problems to be solved by the technicians in the field. The application provides the following scheme based on the technical problems.
The application provides a shielding plate 100, which is applied to a chemical vapor deposition device, wherein the shielding plate 100 comprises:
a first shielding section 110, a second shielding section 120 and a transition section 130, wherein the first shielding section 110 and the second shielding section 120 are vertically arranged, and the transition section 130 is respectively connected with the ends of the first shielding section 110 and the second shielding section 120; the first shielding section 110, the second shielding section 120 and the transition section 130 enclose an opening 140, the first shielding section 110 includes a first side 111 far away from the center of the shielding plate 100, the second shielding section 120 includes a second side 121 far away from the center of the shielding plate 100, the transition section 130 includes a third side 131 connecting the first side 111 and the second side 121, and the third side 131 is disposed at an angle with the first side 111 and the second side 121.
In the application, the third side 131 of the shielding plate 100 is arranged at an included angle with the first side 111 and the second side 121, so that the area of the transition section 130 is reduced, the gap between the transition section 130 and the cavity 212 of the shielding plate 100 is increased, the air flow at the transition section 130 is increased, the density of cleaning gas at the transition section 130 is increased, the self-cleaning speed is increased, and the self-cleaning time is shortened.
In this embodiment, referring to fig. 1 and 2, the shielding plate 100 includes a first shielding section 110 disposed in parallel, a second shielding section 120 disposed in parallel, and a transition section 130 connecting the first shielding section 110 and the second shielding section 120, and the first shielding section 110, the second shielding section 120 and the transition section 130 enclose an opening 140. Typically, the opening 140 is a square opening. The third side 131 of the transition section 130 connects the first side 111 of the first shielding section 110 and the second side 121 of the second shielding section 120, and the third side 131 is not collinear with either the first side 111 or the second side 121, that is, the angle α of the third side 131 to either the first side 111 or the second side 121 is not 0 degrees or 180 degrees.
In this embodiment, the third side 131 may be a straight line or a curved line. Referring to fig. 1, when the third side 131 is a straight line, the angle α between the third side 131 and the first side 111 is an obtuse angle. Referring to fig. 2, when the third side 131 is curved, an included angle α between a tangent line passing through an end point of the curve of the third side 131 and the first side 111 is an obtuse angle.
In this embodiment, the third side 131 may be any other pattern, and it is only necessary that the third side 131 is located in a rectangle surrounded by the extension lines of the first side 111 and the second side 121.
In the present embodiment, the opening 140 is used to accommodate the target substrate 211 to be film-formed, and the shape of the opening 140 may be adjusted according to the shape of the target substrate 211, and generally, the shape of the opening 140 is rectangular. The shape of the opening 140 may be other shapes, and the present application is not limited thereto.
The technical scheme of the present application will now be described with reference to specific embodiments.
During self-cleaning of the chemical vapor deposition apparatus, the special gas for cleaning passes through the gap between the shielding plate 100 and the inner wall of the chamber 212 and is then drawn out by the gas outlet 214, and during self-cleaning, the density of the cleaning gas at the transition section 130 of the shielding plate 100 is small, so that the cleaning of the transition section 130 takes a long time.
In the shielding plate 100 of the present application, the third side 131 is a straight line, and a first angle α between the third side 131 and the first side 111 toward the center of the shielding plate is greater than or equal to a second angle β between the third side 131 and the second side 121 toward the center of the shielding plate.
In the present embodiment, referring to fig. 1, the length of the first side 111 is greater than the length of the second side 121. A first included angle α formed by the third side 131 and the first side 111 and facing the center direction of the shielding plate 100, and a second included angle β formed by the third side 131 and the second side 121 and facing the center direction of the shielding plate, wherein the first included angle α is greater than or equal to the second included angle β.
In this embodiment, referring to fig. 1, the first angle α may also be smaller than the second angle β. By adjusting the relationship between the first included angle α and the second included angle β, the cleaning time of the first shielding section 110 and the second shielding section 120 can be adjusted, so that the cleaning time of the first shielding section 110 and the second shielding section 120 is close to each other, and the self-cleaning time of the shielding plate 100 is shortened.
In this embodiment, the first side 111 is set to be greater than the second side 121, and the angle of the first included angle α formed by the first side 111 and the third side 131 is greater than or equal to the angle of the second included angle β formed by the second side 121 and the third side 131, so that the area of the junction between the transition section 130 and the first side 111 is smaller than the area of the junction between the transition section 130 and the second side 121, and the density of the gas at the junction between the transition section 130 and the first side 111 is greater than the density of the gas at the junction between the transition section 130 and the third side 131, so that the cleaning time at the junction between the transition section 130 and the first side 111 and the third side 131 is similar, and the self-cleaning speed is increased, and the self-cleaning time is shortened.
In the shielding plate 100 of the present application, the third side 131 is an arc, and the center of the arc coincides with the geometric center of the shielding plate 100.
In this embodiment, referring to fig. 2, the third side 131 may be an arc, and the center of the arc coincides with the geometric center of the shielding plate 100. When the third side 131 is curved, the first angle α between the third side 131 and the first side 111 is an obtuse angle between a tangent passing through the end point of the curve and facing the middle of the curve and the first side 111. Similarly, the tangential angle between the third side 131 and the end point of the second side 121 is the second angle β. When the third side is arc-shaped, the first included angle alpha is smaller than the second included angle beta.
In this embodiment, the third side 131 is set to be an arc, and the center of the arc coincides with the geometric center of the shielding plate 100, so that the distance from any point on the third side 131 to the center of the circle is equal, the distance from the cleaning gas to any point on the third side 131 is the same, the density of the cleaning gas on the third side 131 is the same, and the cleaning of the transition section 130 can be synchronously completed, so that the self-cleaning time is shortened.
In the shielding plate 100 of the present application, the sides of the opening 140 are parallel to the first side 111 and the second side 121, respectively, and a circular hole is provided at a corner of the opening 140, and a center of the circular hole coincides with an apex of the opening 140.
In this embodiment, the opening 140 of the shielding plate 100 may be a rectangle, and a circular hole is provided at the vertex of the rectangle, and the center of the circular hole coincides with the vertex of the rectangle.
In this embodiment, by arranging the round hole at the top of the opening 140, the center of the round hole coincides with the top of the opening 140, so that when the cleaning gas flows to the transition section 130, the gas flow can be guided to flow to the middle position of the transition section 130, so that the gas distribution is more uniform, the self-cleaning speed is increased, and the self-cleaning time is shortened.
The application also provides a chemical vapor deposition device, which comprises the shielding plate 100 and a main body part, wherein the main body part comprises a cavity 212, the chemical vapor deposition device also comprises a lower electrode 210 arranged in the cavity 212, and the lower electrode 210 is used for bearing a target substrate 211 to be film-formed; the shielding plate 100 is disposed on the lower electrode 210, the opening 140 is configured to accommodate the target substrate 211, and a gap is formed between the shielding plate 100 and an inner wall of the chamber 212.
In the present embodiment, a lower electrode 210 is disposed in the chamber 212, the lower electrode 210 is used for carrying a target substrate 211 to be film-formed, the shielding plate 100 is disposed on the lower electrode 210, and the target substrate 211 is placed in the opening 140 of the shielding plate 100. During cleaning, the target substrate 211 and the shielding plate 100 are jointly covered on the lower electrode 210, and the upper surface of the lower electrode 210 is shielded so as to prevent the lower electrode 210 from being damaged due to the influence of the reaction gas.
In the chemical vapor deposition apparatus of the present application, the thickness of the shielding plate 100 is less than or equal to the thickness of the target substrate 211 in a direction perpendicular to the upper surface of the lower electrode 210.
In this embodiment, referring to fig. 3, the thickness of the shielding plate 100 is less than or equal to the thickness of the target substrate 211 to be film-formed, and when the gas in the gas inlet 213 is conducted into the chamber 212, the gas is diffused from the upper portion of the chamber 212 to the lower portion and from the middle portion of the chamber 212 to the edge region. In the process of flowing the gas from the middle of the substrate to the edge on the plane close to the target substrate 211, the thickness of the shielding plate 100 is smaller than that of the target substrate 211, so that the gas cannot be blocked by the shielding plate 100, the gas flow is smoother, the distribution uniformity of the cleaning gas in the chamber 212 is accelerated, the density of the cleaning gas in the edge area of the shielding plate 100 is further improved, the self-cleaning speed is accelerated, and the self-cleaning time is shortened.
In the chemical vapor deposition apparatus of the present application, the outer contour of the lower electrode 210 is located inside the shielding plate 100 in a top view direction of the lower electrode 210.
In this embodiment, referring to fig. 3, the outer contour of the lower electrode 210 is smaller than the outer contour of the shielding plate 100, i.e., the upper surface of the lower electrode 210 is completely shielded by the shielding plate 100 and the target substrate 211 together, that is, the shielding plate 100 is used to cover the region of the upper surface of the lower electrode 210 that is not covered by the target substrate 211. With the above arrangement, the upper surface of the lower electrode 210 can be completely shielded by the shielding plate 100 and the target substrate 211, and damage to the upper surface of the lower electrode 210 by the cleaning gas in the chamber 212 can be prevented.
In the chemical vapor deposition apparatus of the present application, the chemical vapor deposition apparatus further includes an air inlet 213 provided at an upper surface of the chamber 212, and an air outlet 214 provided at a lower surface of the chamber 212; wherein the gas entering from the gas inlet 213 flows to the gas outlet 214 through the gap between the shielding plate 100 and the chamber 212.
In this embodiment, the chemical vapor deposition apparatus further includes an air inlet 213 and an air outlet 214, and during the cleaning process, the gas introduced through the air inlet 213 reacts with the byproducts in the chamber 212 and is pumped out through the air outlet 214. A gap is provided between the shielding plate 100 and the inner wall of the chamber 212, through which gas flows to the gas outlet 214.
In the chemical vapor deposition apparatus of the present application, the chemical vapor deposition apparatus further includes a baffle plate 215 disposed at a side of the gas inlet 213 near the lower electrode 210, and the baffle plate 215 is separated from the gas inlet 213 and disposed opposite to the gas inlet 213.
In this embodiment, the chemical vapor deposition apparatus further includes a baffle 215, and the baffle 215 is disposed below the gas inlet 213, for blocking the gas entering the gas inlet 213 and dispersing the gas to the edge of the baffle 215. Since the area of the baffle 215 is larger than the area of the inlet channel of the inlet 213, the area of the gas entering the chamber 212 can be increased after the gas diffuses from the edge of the baffle 215, thereby making the distribution of the gas in the chamber 212 more uniform.
In this embodiment, the baffle 215 is disposed separately from and opposite to the gas inlet 213, that is, the baffle 215 is not in contact with the gas inlet 213, and the center of the baffle 215 coincides with the center of the gas inlet 213, so that the gas entering the gas inlet 213 is dispersed by the baffle 215, thereby making the gas distribution in the chamber 212 more uniform.
In the chemical vapor deposition apparatus of the present application, the chemical vapor deposition apparatus further includes a diffusion plate 216 disposed on a side of the baffle plate 215 near the lower electrode 210, and small holes 217 for passing gas are disposed on the diffusion plate 216.
In this embodiment, the chemical vapor deposition apparatus further includes a diffusion plate 216 disposed below the baffle 215, wherein an edge of the diffusion plate 216 is connected to an edge of the chamber 212, and a plurality of uniformly distributed small holes 217 are disposed on the diffusion plate 216, and the gas can diffuse downward through the small holes 217.
In this embodiment, the diffusion plate 216 is disposed in the chamber 212, and the diffusion plate 216 is uniformly provided with a plurality of small holes 217, so that the gas is diffused downwards through the small holes 217, and the gas diffused by the baffle 215 is further dispersed, so that the gas reaching the chamber 212 is more uniformly distributed.
The application discloses a shielding plate and a chemical vapor deposition device; the shielding plate comprises a first shielding section, a second shielding section and a transition section, wherein the first shielding section and the second shielding section are vertically arranged, the transition section is respectively connected with the ends of the first shielding section and the second shielding section, the first shielding section, the second shielding section and the transition section are encircled to form an opening, the first shielding section comprises a first side edge far away from the center of the shielding plate, the second shielding section comprises a second side edge far away from the center of the shielding plate, the transition section comprises a third side edge connected with the first side edge and the second side edge, and the third side edge is arranged at an included angle with the first side edge and the second side edge; according to the application, the third side edge of the shielding plate, the first side edge and the second side edge are arranged at an included angle, so that the area of the transition section is reduced, the gap between the transition section and the cavity of the shielding plate is increased, the air flow at the transition section is increased, the density of cleaning gas at the transition section is increased, the self-cleaning speed is accelerated, and the self-cleaning time is shortened.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The display panel and the mobile terminal provided by the embodiments of the present application are described in detail, and specific examples are applied to illustrate the principles and the implementation of the present application, and the description of the above embodiments is only used to help understand the technical solution and the core idea of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (9)
1. A shield plate for use in a chemical vapor deposition apparatus, comprising:
the first shielding section, the second shielding section and the transition section are vertically arranged, and the transition section is respectively connected with the end parts of the first shielding section and the second shielding section;
the first shielding section, the second shielding section and the transition section are surrounded to form an opening, the first shielding section comprises a first side edge far away from the center of the shielding plate, the second shielding section comprises a second side edge far away from the center of the shielding plate, the transition section comprises a third side edge connected with the first side edge and the second side edge, the third side edge is arranged at an included angle with the first side edge and the second side edge, and the included angle is not 0 degree or 180 degrees; the edges of the opening are respectively parallel to the first side edge and the second side edge, round holes are formed in corners of the opening, and the circle centers of the round holes coincide with the vertexes of the opening.
2. The shield according to claim 1, wherein the third side is a straight line, and a first angle between the third side and the first side toward the center of the shield is greater than or equal to a second angle between the third side and the second side toward the center of the shield.
3. The shield according to claim 1, wherein the third side is arcuate, the center of the arc coinciding with the geometric center of the shield.
4. A chemical vapor deposition apparatus comprising the shield plate according to any one of claims 1 to 3, the chemical vapor deposition apparatus further comprising:
a body portion including a chamber;
the lower electrode is arranged in the cavity and is used for bearing a target substrate to be formed into a film;
the shielding plate is arranged on the lower electrode, the opening is used for accommodating the target substrate, and a gap is formed between the shielding plate and the inner wall of the chamber.
5. The chemical vapor deposition apparatus according to claim 4, wherein a thickness of the shielding plate is less than or equal to a thickness of the target substrate in a direction perpendicular to an upper surface of the lower electrode.
6. The chemical vapor deposition apparatus according to claim 4, wherein an outer contour of the lower electrode is located inside the shielding plate in a top view direction of the lower electrode.
7. The vapor deposition apparatus of claim 4, further comprising:
the air inlet is arranged on the upper surface of the cavity;
the air outlet is arranged on the lower surface of the cavity;
the gas entering from the gas inlet flows to the gas outlet through the gap between the shielding plate and the cavity.
8. The chemical vapor deposition apparatus of claim 7 further comprising a baffle plate disposed on a side of the gas inlet adjacent to the lower electrode, the baffle plate being spaced apart from and disposed opposite the gas inlet.
9. The chemical vapor deposition apparatus according to claim 8, further comprising a diffusion plate provided on a side of the baffle plate near the lower electrode, the diffusion plate being provided with small holes for passage of gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210756985.5A CN115074697B (en) | 2022-06-29 | 2022-06-29 | Shielding plate and chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210756985.5A CN115074697B (en) | 2022-06-29 | 2022-06-29 | Shielding plate and chemical vapor deposition device |
Publications (2)
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| WO2013021947A1 (en) * | 2011-08-05 | 2013-02-14 | 昭和電工株式会社 | Epitaxial wafer manufacturing device and manufacturing method |
| CN107435141A (en) * | 2017-08-04 | 2017-12-05 | 武汉华星光电技术有限公司 | Chemical vapor depsotition equipment |
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| CN111074236A (en) * | 2019-12-27 | 2020-04-28 | 重庆康佳光电技术研究院有限公司 | Chemical vapor deposition device |
| WO2020083917A1 (en) * | 2018-10-25 | 2020-04-30 | Aixtron Se | Shield plate for a cvd reactor |
| CN112695303A (en) * | 2019-10-23 | 2021-04-23 | 长鑫存储技术有限公司 | Film deposition device and film deposition method |
| TWM620965U (en) * | 2021-06-29 | 2021-12-11 | 天虹科技股份有限公司 | Depositing device with split-type shielding member |
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2022
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| JPH03183758A (en) * | 1989-12-11 | 1991-08-09 | Canon Inc | Masking member |
| US5270085A (en) * | 1990-04-26 | 1993-12-14 | Nagoya Oilchemical Co., Ltd. | Masking member |
| WO2013021947A1 (en) * | 2011-08-05 | 2013-02-14 | 昭和電工株式会社 | Epitaxial wafer manufacturing device and manufacturing method |
| CN107435141A (en) * | 2017-08-04 | 2017-12-05 | 武汉华星光电技术有限公司 | Chemical vapor depsotition equipment |
| CN110468454A (en) * | 2018-05-11 | 2019-11-19 | 昭和电工株式会社 | Shading member and the single-crystal growing apparatus for having the shading member |
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| CN112695303A (en) * | 2019-10-23 | 2021-04-23 | 长鑫存储技术有限公司 | Film deposition device and film deposition method |
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| TWM620965U (en) * | 2021-06-29 | 2021-12-11 | 天虹科技股份有限公司 | Depositing device with split-type shielding member |
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| CN115074697A (en) | 2022-09-20 |
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