CN115064601B - Photoelectric device and method for manufacturing the same - Google Patents
Photoelectric device and method for manufacturing the same Download PDFInfo
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- CN115064601B CN115064601B CN202210770504.6A CN202210770504A CN115064601B CN 115064601 B CN115064601 B CN 115064601B CN 202210770504 A CN202210770504 A CN 202210770504A CN 115064601 B CN115064601 B CN 115064601B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1433—Quantum dots
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
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Abstract
本发明提供一种光电器件及其制造方法。所述光电器件包括衬底、重掺杂区、量子点薄膜及透明导电膜层。所述衬底具有相对的第一表面和第二表面。所述重掺杂区设于所述衬底中并自所述衬底的第一表面外露，所述重掺杂区的材料为第一导电类型材料。所述量子点薄膜设于所述衬底的第二表面，所述量子点薄膜的材料为第二导电类型材料。所述透明导电膜层，设于所述量子点薄膜背离所述衬底的一侧。上述光电器件在衬底的第二表面设置量子点薄膜，使得量子点薄膜与重掺杂区之间形成异质结，基于量子点薄膜可设置为能吸收更大波长的光，使得该设置量子点薄膜的光电器件能够探测更大波长范围的光，提高光电器件的探测效果。
The present invention provides a photoelectric device and a method for manufacturing the same. The photoelectric device includes a substrate, a heavily doped region, a quantum dot film and a transparent conductive film layer. The substrate has a first surface and a second surface opposite to each other. The heavily doped region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material. The quantum dot film is arranged on the second surface of the substrate, and the material of the quantum dot film is a second conductive type material. The transparent conductive film layer is arranged on the side of the quantum dot film away from the substrate. The above-mentioned photoelectric device is provided with a quantum dot film on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region. Based on the fact that the quantum dot film can be arranged to absorb light of a larger wavelength, the photoelectric device provided with the quantum dot film can detect light of a larger wavelength range, thereby improving the detection effect of the photoelectric device.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a photoelectric device and a manufacturing method thereof.
Background
Single Photon Avalanche Diode (SPAD) is an important photoelectric device capable of detecting single photons. With the high-speed development of the silicon-based integrated circuit industry, single photon avalanche diodes are gradually manufactured by a silicon-based integrated circuit process in recent years, so that photoelectric devices capable of detecting single photons are formed. However, due to the silicon-based material properties, the wavelength that can be detected is generally less than 1.1 μm, and longer wavelength detection is not easily achieved.
Disclosure of Invention
According to a first aspect of an embodiment of the present invention, there is provided an optoelectronic device comprising:
a substrate having opposed first and second surfaces;
the heavy doping region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavy doping region is a first conductive type material;
the quantum dot film is arranged on the second surface of the substrate, and the material of the quantum dot film is a second conductive type material;
and the transparent conductive film layer is arranged on one side of the quantum dot film, which is away from the substrate.
In some embodiments, the optoelectronic device includes a plurality of heavily doped regions arranged in an array.
In some embodiments, the optoelectronic device includes an isolation barrier disposed in the substrate, the isolation barrier being disposed at a periphery of the heavily doped region.
In some embodiments, the insulated retaining wall comprises:
The first isolation retaining wall is arranged on the inner side of the first surface of the substrate and is positioned on the periphery of the heavily doped region;
the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
In some embodiments, the optoelectronic device includes a diffusion protection zone located at a periphery of the heavily doped zone.
In some embodiments, the material of the quantum dot film includes one or more of lead sulfide, lead selenide, lead telluride, mercury telluride, and mercury cadmium telluride.
In some embodiments, the optoelectronic device is a single photon avalanche diode.
According to a second aspect of an embodiment of the present invention, there is provided a method of manufacturing an optoelectronic device, the method comprising:
Providing a substrate having opposed first and second surfaces;
Forming a heavily doped region in the substrate, wherein the heavily doped region is exposed from the first surface of the substrate, and the heavily doped region is made of a first conductive type material;
forming a quantum dot film on the second surface of the substrate, wherein the material of the quantum dot film is a second conductive type material;
and forming a transparent conductive film layer on one side of the quantum dot film, which is away from the substrate.
In some embodiments, after providing a substrate, before forming a heavily doped region in the substrate, the method includes:
Forming first isolation retaining walls, wherein the first isolation retaining walls are positioned on the inner side of the first surface of the substrate, and a diffusion protection zone is formed between two adjacent first isolation retaining walls at the periphery of the heavily doped zone;
forming a heavily doped region in the substrate includes:
and forming a heavily doped region at the diffusion protection region, wherein the diffusion protection region is positioned at the periphery of the heavily doped region.
In some embodiments, after forming a heavily doped region in the substrate, before forming a quantum dot film on the second surface of the substrate, the method includes:
and forming a second isolation retaining wall in the substrate, wherein the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
In some embodiments, prior to the providing the substrate, the method comprises:
Providing a substrate;
The providing a substrate includes:
The substrate is formed on the substrate base plate.
In some embodiments, after forming a heavily doped region in the substrate, before forming a second isolation barrier in the substrate, the method comprises:
And thinning the substrate base plate to expose the substrate.
Based on the technical scheme, the quantum dot film is arranged on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region, the quantum dot film can be arranged to absorb light with larger wavelength, the photoelectric device provided with the quantum dot film can detect light with larger wavelength range, and the detection effect of the photoelectric device is improved.
Drawings
FIG. 1 is a cross-sectional view of an optoelectronic device according to an embodiment of the present invention;
Fig. 2 is a schematic diagram illustrating an operation principle of an optoelectronic device according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of another optoelectronic device according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method for fabricating an optoelectronic device according to an embodiment of the present invention;
fig. 5 to 13 are process diagrams of a manufacturing process of an optoelectronic device according to an embodiment of the present invention;
Fig. 14 to 20 are process diagrams of another photoelectric device according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Embodiments of the present invention are described in detail below with reference to fig. 1-20.
An embodiment of the present invention provides an optoelectronic device including:
a substrate having opposed first and second surfaces;
the heavy doping region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavy doping region is a first conductive type material;
the quantum dot film is arranged on the second surface of the substrate, and the material of the quantum dot film is a second conductive type material;
and the transparent conductive film layer is arranged on one side of the quantum dot film, which is away from the substrate.
According to the photoelectric device, the quantum dot film is arranged on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region, the quantum dot film can be arranged to absorb light with larger wavelength, the photoelectric device provided with the quantum dot film can detect light with larger wavelength range, and the detection effect of the photoelectric device is improved.
The photovoltaic device according to the application may be a Single Photon Avalanche Diode (SPAD) or a device with such a Single Photon Avalanche Diode (SPAD), such as a photodetector. The photovoltaic device of the present application may be a back-illuminated photovoltaic device.
The following describes in detail the optoelectronic device provided by the present application with reference to fig. 1 to 3.
Referring to fig. 1, in some embodiments, an optoelectronic device 100 includes a substrate 11, a heavily doped region 40, a quantum dot thin film 60, and a transparent conductive film layer 70. The substrate 11 has opposing first and second surfaces 1001, 1002. The heavily doped region 40 is disposed in the substrate 11 and exposed from the first surface 1001 of the substrate 11, and the material of the heavily doped region 40 is a material of the first conductivity type. The quantum dot film 60 is disposed on the second surface 1002 of the substrate 11, and the material of the quantum dot film 60 is a second conductive type material. The transparent conductive film layer 70 is provided on the side of the quantum dot film 60 facing away from the substrate 11.
In this embodiment, the substrate 11 is a silicon-based substrate, and includes a silicon material. The material of the substrate 11 here may be a first conductivity type material.
The first conductivity type is N type and the second conductivity type is P type. The first conductive type material is an N-type material, and the second conductive type material is a P-type material. Accordingly, the substrate 11 is an N-type substrate. Heavily doped region 40 is an N-type doped region. Heavily doped region 40 may be formed by implanting N-type dopant material. Wherein the doping concentration of the N-type doping material of the heavily doped region 40 is higher than the doping concentration of the N-type doping material in the substrate 11.
In some embodiments, the material of the quantum dot film 60 is a combination of one or more of lead sulfide PbS, lead selenide PbSe, lead telluride PbTe, mercury telluride HgTe, and mercury cadmium telluride HgCdTe. The quantum dot film 60 may set the quantum dot film 60 to a preset thickness according to circumstances, so as to be capable of absorbing light having a wavelength of >1.1 um.
Here the quantum dot film 60 may cover the entire second surface of the substrate 11.
It should be noted that, since the doping concentration in the substrate is generally low, the overall photoelectric performance of the photoelectric device in which the material of the substrate is the second conductivity type material and the material of the substrate 11 is the first conductivity type material is not greatly affected. Thus, in other embodiments, the material of the substrate 11 is a second conductivity type material.
The material of the transparent conductive film layer 70 may be indium-doped tin oxide (ITO) or other similar materials.
The heavily doped region 40 serves here as a cathode for the positive electrode of the power supply during operation of the optoelectronic device 100. The heavily doped region 40 may be connected to a connection lead from a side facing away from the substrate 11 to connect to the positive pole of the power supply. The transparent conductive film layer 70 serves as an anode for connecting to a negative electrode of a power supply in the operation of the optoelectronic device 100. Alternatively, the transparent conductive film layer 70 may be connected to a structure such as a connection lead from a side facing away from the substrate 11 to connect to a negative electrode connection of a power supply.
In some embodiments, the optoelectronic device 100 has a plurality of photodiode cells (such as single photon avalanche diode cells). The plurality of photodiode cells are arranged in an array. Accordingly, the optoelectronic device 100 includes a plurality of heavily doped regions 40. Each heavily doped region 40 forms a respective photodiode cell with a corresponding substrate portion, a corresponding quantum dot film 60 portion, and the like. The plurality of heavily doped regions 40 are arranged in an array.
Of course, in other embodiments, the optoelectronic device may also include a heavily doped region.
In some embodiments, the optoelectronic device 100 includes an isolation barrier disposed in the substrate 11, and the isolation barrier is disposed on the periphery of the heavily doped region.
For example, as shown in fig. 1, the isolation barrier includes a first isolation barrier 20 and a second isolation barrier 50. The first isolation barrier 20 is disposed inside the first surface 1001 of the substrate 11 and is located at the periphery of the heavily doped region 40. The second isolation retaining wall 50 is disposed on the inner side of the second surface of the substrate 11 and opposite to the first isolation retaining wall 20.
Here first isolation barrier 20 is exposed from first surface 1001 of substrate 11. The second isolation barrier 50 is exposed from the second surface 1002 of the substrate 11. Of course, the isolation retaining wall can be not exposed. The first isolation retaining wall is integrally arranged closer to the first surface of the substrate, and the second isolation retaining wall is arranged closer to the second surface of the substrate.
In this embodiment, the first isolation barrier 20 is a Shallow Trench Isolation (STI) structure. The second isolation barrier 50 adopts a Deep Trench Isolation (DTI) structure. Opposite ends of the first and second isolation barriers 20 and 50 are spaced apart. First isolation barrier 20 is located in substrate 11 and exposed from first surface 1001. The first isolation barrier 20 extends inward a predetermined depth from the substrate first surface 1001. The second isolation barrier 50 extends a predetermined depth from the second surface 1002 of the substrate 11.
Of course, in other embodiments, the specific structures of the first isolation retaining wall and the second isolation retaining wall are not limited. For example, first isolation barrier 20 and second isolation barrier 50 may be integrally connected to form an isolation barrier extending through first surface 1001 and second surface 1002 of substrate 11.
It should be noted that, for the optoelectronic device 100 including the plurality of heavily doped regions 40 arranged in an array, the isolation barrier is further located between two adjacent heavily doped regions 40 to isolate the optoelectronic device 100 into a plurality of photodiode units arranged in an array. For the photoelectric device comprising a heavily doped region, the isolation retaining wall, the heavily doped region on the inner side of the isolation retaining wall and other structures correspondingly form a photodiode unit.
It should be noted that only 3 heavily doped regions are illustrated in fig. 1, and three corresponding photodiode cells may be formed. Indeed the optoelectronic device may comprise any other plurality of heavily doped regions, such as 2,4, 5. The application does not limit the number of the heavily doped regions and the corresponding photodiode units in the photoelectric device, and can be set according to specific situations.
In some embodiments, the optoelectronic device 100 includes a diffusion protection zone 30, the diffusion protection zone 30 being located at the periphery of the heavily doped zone 40, such as the diffusion protection zone 30 shown in fig. 1 being located at the peripheral periphery of the doped zone 40.
The diffusion protection zone 30 is located at the periphery of the heavily doped zone 40 is understood herein to mean that the diffusion protection zone 30 is located at the periphery of the heavily doped zone 40. The peripheral side wall of heavily doped region 40 may be understood herein as the outer surface region except for the side of heavily doped region 40 facing toward quantum dot film 60 and the side facing away from quantum dot film 60.
Of course, in other embodiments, the diffusion protection zone may cover part or all of the area of the heavily doped region facing the side of the quantum dot film, in addition to being located at the periphery of the doped region 40.
The material of the diffusion protection zone 30 may be a first conductivity type material. The doping concentration of the diffusion protection zone 30 may be lower than that of the heavily doped zone 40 and higher than that of the substrate 11, so as to protect the periphery of the heavily doped zone 40 and prevent the heavily doped zone 40 from being adversely affected due to the drift of more photo-generated electrons on the periphery of the heavily doped zone 40.
In the photovoltaic device 100, in order to make the photo-generated electrons generated in the quantum dot film 60 smoothly transfer to silicon and eventually trigger avalanche, the substrate 11 is not provided with another heavily doped region (P-type doped region) having the second conductivity type material, which is matched with the heavily doped region 40, near the second surface 1002.
As shown in fig. 2, based on the above description of the optoelectronic device 100, the heavily doped region 40 of the optoelectronic device 100 forms a heterojunction with the corresponding portion of the substrate 11 and the quantum dot film 60. The area indicated by the dashed box is a depletion region, and the directional straight arrow in the area is the direction of the built-in electric field. When the optoelectronic device 100 is in operation, photons penetrate from the transparent conductive film layer 70 into the quantum dot film 60, and are absorbed by the quantum dot film 60 to generate photo-generated electrons and holes. The photo-generated carriers are subjected to a built-in electric field in the depletion region, and photo-generated electrons drift toward the side of the substrate 11 and enter an avalanche region near the heavily doped region 40, generating photon counts. The holes are moved in the opposite direction to the photo-generated electrons, and the holes drift toward the neutral region of the quantum dot film 60 (i.e., the region of the quantum dot film 60 near the transparent conductive film layer 70) and are finally recombined or collected by the transparent conductive film 60. Photons that are not absorbed by quantum dot film 60 continue into substrate 11 to be absorbed by substrate 11, producing a corresponding photon count.
Since the quantum dot film 60 may be set to absorb the cutoff wavelength greater than 1.1um. Photons having a wavelength greater than 1.1um can be detected by the optoelectronic device 100. Of course, photons having a wavelength less than or equal to 1.1 μm may be detected by the substrate 11. Compared with a photoelectric device only adopting a silicon substrate, the photoelectric device 100 has wider detection wavelength range and is beneficial to improving the detection effect of the photoelectric device.
Referring to fig. 3, an embodiment of the invention further provides an optoelectronic device 200. The structure of the optoelectronic device 200 is substantially the same as that of the optoelectronic device 100 described above, and the same or similar points are referred to the related description and are not repeated here. In addition to coating the periphery of the doped region 40, the diffusion protection zone 30 of the optoelectronic device 200 may also coat the side of the heavily doped region 40 facing the quantum dot film. As shown in fig. 3, the diffusion protection zone 30 here encloses the entire area of the heavily doped region 40 except for the side facing away from the quantum dot film 60.
Referring to fig. 4, an embodiment of the present invention provides a method for manufacturing an optoelectronic device, including steps S101 to S107:
in step S101, providing a substrate having opposite first and second surfaces;
in step S103, a heavily doped region is formed in the substrate, the heavily doped region is exposed from the first surface of the substrate, and the heavily doped region is made of a material of a first conductivity type;
in step S105, forming a quantum dot film on the second surface of the substrate, where the material of the quantum dot film is a second conductive type material;
In step S107, a transparent conductive film layer is formed on a side of the quantum dot thin film facing away from the substrate.
Referring to fig. 5 to 13, fig. 5 to 13 are process diagrams of manufacturing the optoelectronic device 100.
In step S101, a substrate 11 is provided.
In some embodiments, prior to step S101, the method includes the following step S1011:
in step S1011, a substrate base is provided.
Referring to fig. 5, a substrate base 10 is provided. The substrate base plate 10 has a first surface 101 and a second surface 102 facing away from each other. The substrate base plate 10 may be a structural layer doped with a material of a first conductivity type. For example, silicon may be doped.
Accordingly, step S101 may be specifically implemented by the following step S1012:
In step S1012, the substrate is formed on the substrate base plate.
As shown in fig. 6, a substrate 11 is formed on a substrate base 10. The substrate 11 may have the same conductivity type as the substrate base 10. I.e. the material of the substrate 11 may also be a material of the first conductivity type. The same doping material, such as doped silicon, may also be doped to form a silicon-based substrate. Alternatively, the doping concentration of the substrate 11 may be smaller than the doping concentration of the substrate base plate 10.
In some embodiments, after step S101, before step S103, the method includes the following step S1021:
In step S1021, a first isolation retaining wall 20 is formed, and the first isolation retaining wall is located inside the first surface of the substrate and is located at the periphery of the heavily doped region 40.
As shown in fig. 7, the first isolation barrier 20 may be exposed from the first surface 1001 of the substrate 11.
The first isolation barrier 20 may be a shallow trench isolation structure. Specifically, the first isolation barrier 20 may be formed by first providing the corresponding trench 21 in the substrate 11, and then filling the trench 21 with a dielectric material (e.g., an oxide (e.g., silicon oxide), a nitride (e.g., silicon nitride or silicon oxynitride), a low-k dielectric, and/or another suitable dielectric material).
After step S1021, the method includes the following step S1022:
In step S1022, the diffusion protection zone 30 is formed between two adjacent first isolation barriers 20, as shown in fig. 8.
The material of the diffusion protection zone 30 may be a first conductivity type material.
Accordingly, as shown in fig. 9, in step S103, specifically, forming a heavily doped region 40 at the diffusion protection zone 30, the diffusion protection zone 30 being located at the periphery of the heavily doped region.
After the heavily doped region 40 is formed here, the diffusion protection zone 30 is located at the periphery of the heavily doped region 40. I.e., diffusion protection zone 30 is located at the periphery of the peripheral sidewall of heavily doped zone 40. The peripheral side wall of heavily doped region 40 may be understood herein as the outer surface region except for the side of heavily doped region 40 facing quantum dot film 60 and the side of quantum dot film 60 facing away from substrate 11.
The material of the diffusion protection zone 30 may be a first conductivity type material. The doping concentration of the diffusion protection zone 30 may be lower than that of the heavily doped zone 40 and higher than that of the substrate 11, so as to protect the periphery of the heavily doped zone 40 and prevent the heavily doped zone 40 from being adversely affected due to the drift of more photo-generated electrons on the periphery of the heavily doped zone 40.
In some embodiments, after step S103, before step S105, the method includes the following step S104:
in step S104, a second isolation retaining wall 50 is formed in the substrate 11, and the second isolation retaining wall 50 is disposed opposite to the first isolation retaining wall 20.
As shown in fig. 11, the second isolation barrier 50 may be a deep trench isolation structure, and the second isolation barrier 50 is located in the substrate 11. Specifically, the corresponding trench 51 may be formed in the substrate 11, and then the trench 51 may be filled with a dielectric material (e.g., an oxide (e.g., silicon oxide), a nitride (e.g., silicon nitride or silicon oxynitride), a low-k dielectric, and/or another suitable dielectric material), etc., to form the second isolation barrier 50.
The specific structures of the first isolation retaining wall 20 and the second isolation retaining wall 50 may be referred to the above related descriptions, and will not be repeated here.
In some embodiments, after step S103, before forming a second isolation retaining wall in the substrate, the method includes step S1040:
In step S1040, the substrate is thinned, and the substrate is exposed.
As shown in fig. 10, the substrate 10 is thinned to expose the substrate 11. The substrate 10 may be thinned by mechanical polishing or mechanical peeling. The surface of the substrate 11 exposed after thinning on the side is the second surface of the substrate 11.
It should be noted that, in the thinning process, only the substrate 10 may be thinned and removed, or the portion of the substrate 11 near one side of the substrate may be removed together, so that the substrate 11 meets the thickness requirement. The substrate base plate 10 alone or the substrate 11 together with the thinning is specifically required to be removed by thinning, and can be adaptively selected according to the specific circumstances.
In step S105, a quantum dot film 60 is formed on the second surface 1002 of the substrate 11, as shown in fig. 12. The material of the quantum dot film 60 is a second conductivity type material.
In some embodiments, the material of the quantum dot film 60 is a combination of one or more of lead sulfide PbS, lead selenide PbSe, lead telluride PbTe, mercury telluride HgTe, and mercury cadmium telluride HgCdTe. The quantum dot film 60 may set the quantum dot film 60 to a preset thickness according to circumstances, so as to be capable of absorbing light having a wavelength of >1.1 um.
The quantum dot film 60 may be formed by spin coating, ink jet printing, knife coating, and the like. Here the quantum dot film 60 may cover the entire second surface 1002 of the substrate 11. The specific thickness of the quantum dot film 60 may be set according to the specific material, wavelength to be absorbed, and the like.
The first conductivity type is N-type, and the second conductivity type is P-type. The first conductive type material is an N-type material, and the second conductive type material is a P-type material. Accordingly, the substrate 11 is an N-type substrate. Heavily doped region 40 is an N-type doped region. Heavily doped region 40 may be formed by implanting N-type dopant material. Wherein the doping concentration of the N-type doping material of the heavily doped region 40 is higher than the doping concentration of the N-type doping material in the substrate 11.
As shown in fig. 13, in step S107, a transparent conductive film layer 70 is formed on a side of the quantum dot thin film 60 facing away from the substrate 11.
The transparent conductive film layer 70 is formed by depositing a transparent conductive film 70 on the surface of the quantum dot film 60 by magnetron sputtering or the like. The material of the transparent conductive film layer 70 may be indium doped tin oxide (ITO) or other similar materials.
Referring to fig. 14 to 20, fig. 14 to 20 are process diagrams of the manufacturing process of the optoelectronic device 100'. The optoelectronic device 100' is substantially identical to the fabrication process of the optoelectronic device 100 of fig. 5-13 described above, and the same and similar features are described with reference to the above-described related descriptions. Except that the substrate 11' is provided directly in the optoelectronic device 100' and is operated directly in the substrate 10' without the support of the substrate base substrate. Accordingly, subsequent thinning processes without providing a substrate base plate, after forming the heavily doped region 40 in the substrate 10', may proceed directly to a corresponding step of providing the second isolation barrier 50. The substrate 11' may be similar to the substrate 11 described above.
In the present application, the structural embodiments and the method embodiments may complement each other without collision.
Those skilled in the art will appreciate that the drawing is merely a schematic representation of one preferred embodiment and that the modules or processes in the drawing are not necessarily required to practice the invention. The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily appreciate variations or alternatives within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (11)
1. An optoelectronic device, the optoelectronic device comprising:
The substrate is a silicon-based substrate, the material of the substrate is a first conductive type material, and the first conductive type material is an N-type material;
The photoelectric device comprises a substrate, a heavily doped region, a cathode and an anode, wherein the heavily doped region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;
The quantum dot thin film is arranged on the second surface of the substrate and is in contact with the second surface of the substrate, the material of the quantum dot thin film is a second conductive type material, and the second conductive type material is a P type material;
the transparent conductive film layer is used as an anode and is used for connecting with a negative electrode of a power supply in the working engineering of the photoelectric device;
The photoelectric device is a single photon avalanche diode;
The photoelectric device comprises a diffusion protection zone, wherein the diffusion protection zone is at least positioned at the periphery of the heavy doping zone, the diffusion protection zone is made of a first conductive type material, and the doping concentration of the diffusion protection zone is lower than that of the heavy doping zone and higher than that of the substrate.
2. The optoelectronic device of claim 1, wherein the optoelectronic device comprises a plurality of heavily doped regions arranged in an array.
3. The optoelectronic device of claim 1, wherein the optoelectronic device comprises an isolation barrier disposed in the substrate, the isolation barrier disposed at a periphery of the heavily doped region.
4. The optoelectronic device of claim 3, wherein the isolation barrier comprises:
The first isolation retaining wall is arranged on the inner side of the first surface of the substrate and is positioned on the periphery of the heavily doped region;
the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
5. The optoelectronic device of claim 1, wherein the material of the quantum dot film comprises one or more of lead sulfide, lead selenide, lead telluride, mercury telluride, and mercury cadmium telluride.
6. A method of manufacturing an optoelectronic device, the method comprising:
the method comprises the steps of providing a substrate, wherein the substrate is provided with a first surface and a second surface which are opposite, the substrate is a silicon-based substrate, the material of the substrate is a first conductive type material, and the first conductive type material is an N-type material;
Forming a heavily doped region in the substrate, wherein the heavily doped region is exposed from the first surface of the substrate, the heavily doped region is made of a first conductive material, the heavily doped region is used as a cathode, and is used for connecting with an anode of a power supply in the working process of the photoelectric device,
Forming a quantum dot film on the second surface of the substrate and contacting the second surface of the substrate, wherein the material of the quantum dot film is a second conductive type material, and the second conductive type material is a P type material;
forming a transparent conductive film layer on one side of the quantum dot film, which is far away from the substrate, wherein the transparent conductive film layer is used as an anode and is used for connecting with a negative electrode of a power supply in the working engineering of the photoelectric device;
The photoelectric device is a single photon avalanche diode;
after providing the substrate, before forming the heavily doped region in the substrate, the method further comprises:
And forming a diffusion protection zone, wherein the diffusion protection zone is at least positioned at the periphery of the heavy doping zone, the diffusion protection zone is made of a first conductive type material, and the doping concentration of the diffusion protection zone is lower than that of the heavy doping zone and higher than that of the substrate.
7. The method of manufacturing an optoelectronic device according to claim 6, wherein after providing a substrate, before forming a heavily doped region in the substrate, the method comprises:
And forming a first isolation retaining wall, wherein the first isolation retaining wall is positioned on the inner side of the first surface of the substrate and positioned on the periphery of the heavily doped region.
8. The method of fabricating an optoelectronic device according to claim 7, wherein after forming the first isolation barrier, the method comprises
Forming a diffusion protection zone between two adjacent first isolation retaining walls;
forming a heavily doped region in the substrate includes:
and forming a heavily doped region at the diffusion protection region, wherein the diffusion protection region is positioned at the periphery of the heavily doped region.
9. A method of fabricating an optoelectronic device according to claim 7 or 8, wherein after forming the heavily doped region in the substrate, before forming the quantum dot film on the second surface of the substrate, the method comprises:
and forming a second isolation retaining wall in the substrate, wherein the second isolation retaining wall is arranged on the inner side of the second surface of the substrate and is opposite to the first isolation retaining wall.
10. A method of fabricating an optoelectronic device according to claim 9, wherein prior to said providing a substrate, the method comprises:
Providing a substrate;
The providing a substrate includes:
The substrate is formed on the substrate base plate.
11. The method of fabricating an optoelectronic device according to claim 10, wherein after forming a heavily doped region in the substrate, before forming a second isolation barrier in the substrate, the method comprises:
And thinning the substrate base plate to expose the substrate.
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| CN106601857A (en) * | 2016-11-22 | 2017-04-26 | 浙江大学 | Photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and preparation method thereof |
| CN114556570A (en) * | 2019-06-28 | 2022-05-27 | 苹果公司 | Stacked electromagnetic radiation sensor for visible image sensing and infrared depth sensing, or for visible image sensing and infrared image sensing |
| CN114664965A (en) * | 2020-12-22 | 2022-06-24 | 上海禾赛科技有限公司 | Single-photon avalanche diode, forming method, driving method and laser radar |
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| KR100459894B1 (en) * | 2002-02-09 | 2004-12-04 | 삼성전자주식회사 | Silicon photo-detecting device |
| WO2012167282A1 (en) * | 2011-06-02 | 2012-12-06 | Brown University | High-efficiency silicon-compatible photodetectors based on ge quantumdots and ge/si hetero-nanowires |
| US8981207B1 (en) * | 2012-01-05 | 2015-03-17 | Magnolia Solar, Inc. | High efficiency quantum dot sensitized thin film solar cell with absorber layer |
| CN108281554B (en) * | 2018-01-26 | 2020-03-17 | 电子科技大学 | Photoelectric detector with quantum dot structure and preparation method thereof |
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| CN106601857A (en) * | 2016-11-22 | 2017-04-26 | 浙江大学 | Photoconductive detector based on boron-doped silicon quantum dot/graphene/silicon dioxide and preparation method thereof |
| CN114556570A (en) * | 2019-06-28 | 2022-05-27 | 苹果公司 | Stacked electromagnetic radiation sensor for visible image sensing and infrared depth sensing, or for visible image sensing and infrared image sensing |
| CN114664965A (en) * | 2020-12-22 | 2022-06-24 | 上海禾赛科技有限公司 | Single-photon avalanche diode, forming method, driving method and laser radar |
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