CN115016225B

CN115016225B - Mask base plate, mask plate and photoetching equipment

Info

Publication number: CN115016225B
Application number: CN202210934134.5A
Authority: CN
Inventors: 林岳明; 季明华; 黄早红
Original assignee: Shanghai Chuanxin Semiconductor Co ltd
Current assignee: Shanghai Chuanxin Semiconductor Co ltd
Priority date: 2022-08-04
Filing date: 2022-08-04
Publication date: 2022-11-15
Anticipated expiration: 2042-08-04
Also published as: CN115016225A

Abstract

The invention relates to a mask base plate, a mask plate and photoetching equipment. The mask master includes: the light-emitting device comprises a substrate, and a first double-color shading layer and a second double-color shading layer which are respectively arranged on two sides of the substrate; the first bicolor shading layer is used for transmitting the first exposure light beam and shading the second exposure light beam; the second double-color shading layer is used for transmitting the second exposure light beam and shading the first exposure light beam; wherein the wavelength of the first exposure beam is a first wavelength; the wavelength of the second exposure light beam is a second wavelength; the first wavelength is different from the second wavelength. The mask base plate, the mask plate and the photoetching equipment provided by the invention can reduce the total number of the mask plates required in the preparation process of a semiconductor device, thereby reducing the production cost.

Description

Mask base plate, mask plate and photoetching equipment

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a mask base plate, a mask plate and photoetching equipment.

Background

With the development of innovative technologies such as Artificial Intelligence (AI), fifth Generation Mobile Communication Technology (5G), big data, artificial Intelligence Internet of Things (AIoT), and auto-driving, the reduction of device feature sizes in microprocessors (CPUs) and Dynamic Random Access Memories (DRAMs) has shown a trend of accelerating and deviating from moore's law, which also increases the difficulty in manufacturing semiconductor devices.

At present, the most complicated and difficult step in a semiconductor manufacturing process is photolithography, which can account for, for example, 1/3 of the total production process, and the photolithography equipment is therefore one of the most important semiconductor manufacturing equipments.

However, as semiconductor devices are increasingly integrated and device feature sizes are reduced, the number of reticles required for semiconductor device fabrication is increasing, for example eighty more reticles are required to complete a chip at a 10nm process node. Furthermore, as the size of process nodes decreases, the cost of reticles also continues to increase. Resulting in high production costs of the semiconductor device.

Disclosure of Invention

Accordingly, the embodiment of the invention provides a mask base plate, a mask plate and a photoetching device, which can form mask patterns on two sides of a substrate. Therefore, mask patterns in the shading layers on the two sides of the substrate can be flexibly designed according to requirements, the total number of masks required in the preparation process of the semiconductor device is reduced, and the production cost can be effectively reduced.

In one aspect, an embodiment of the present invention provides a mask substrate, including: the light-emitting device comprises a substrate, and a first bicolor shading layer and a second bicolor shading layer which are respectively arranged on two sides of the substrate. The first dual-color shading layer is used for transmitting the first exposure light beam and shading the second exposure light beam (when the mask is manufactured, the first dual-color shading layer is patterned, and then a second mask pattern can be formed). The second double-color shading layer is used for transmitting the second exposure light beam and shading the first exposure light beam (when a mask is manufactured, the second double-color shading layer is patterned, and a first mask pattern can be formed). Wherein the wavelength of the first exposure beam is a first wavelength; the wavelength of the second exposure light beam is a second wavelength; the first wavelength is different from the second wavelength.

In the embodiment of the disclosure, the first bicolor shading layer and the second bicolor shading layer are respectively arranged on two sides of the substrate, and after the bicolor shading layers are respectively etched to form masks based on the filtering functions of the first bicolor shading layer and the second bicolor shading layer, corresponding mask patterns can be respectively formed on the wafer aiming at exposure beams with different wavelengths, so that two sides of the substrate can be effectively utilized. Therefore, the mask patterns in the shading layers on the two sides of the substrate can be flexibly designed according to requirements, so that the total number of masks required in the preparation process of the semiconductor device is reduced, and the production cost is effectively reduced.

In some embodiments, the first bi-color light-shielding layer comprises: and the first light-shielding film and the first antireflection film are stacked along the direction away from the substrate. The first antireflection film is positioned on a first exposure light beam incidence side and a second exposure light beam emergence side of the first light shielding film, and the first antireflection film is used for reducing reflection of the first exposure light beam. The first light shielding film is used for shielding the second exposure light beam and transmitting the first exposure light beam.

In some embodiments, the first light blocking film comprises: a film highly reflective of light of the second wavelength.

In some embodiments, the second dichroic light shielding layer comprises: and a second light-shielding film and a second antireflection film which are stacked in a direction away from the substrate. The second antireflection film is positioned on a second exposure light beam incidence side and a first exposure light beam emergence side of the second light shielding film and used for reducing reflection of the second exposure light beam; the second shading film is used for shading the first exposure light beam and transmitting the second exposure light beam.

In some embodiments, the second light blocking film comprises: a film highly reflective of light of the first wavelength.

In some embodiments, the first wavelength and the second wavelength are wavelengths of any two different wavelengths of visible light, ultraviolet light, and deep ultraviolet light, respectively.

In some embodiments, the mask template further comprises: the first photoresist layer is located on one side, away from the substrate, of the first bicolor shading layer, and the second photoresist layer is located on one side, away from the substrate, of the second bicolor shading layer.

In another aspect, an embodiment of the present invention provides a reticle, including: the light-emitting device comprises a substrate, and a first bicolor shading layer and a second bicolor shading layer which are respectively arranged on two sides of the substrate. The first bicolor shading layer is provided with a second mask pattern and is used for transmitting a first exposure light beam in the whole area and transmitting a second exposure light beam according to a light transmitting area of the second mask pattern. The second dichroic light shielding layer has a first mask pattern for transmitting the second exposure beam in a full area and transmitting the first exposure beam according to a light transmitting area of the first mask pattern. Wherein the wavelength of the first exposure beam is a first wavelength; the wavelength of the second exposure light beam is a second wavelength; the first wavelength is different from the second wavelength.

In the embodiment of the disclosure, the first and second dichroic light-shielding layers are respectively disposed on two sides of the substrate, so that the first dichroic light-shielding layer has the second mask pattern, and the second dichroic light-shielding layer has the first mask pattern, thereby ensuring that both sides of the substrate can be effectively utilized. And based on different filtering functions of the first bicolor shading layer and the second bicolor shading layer, photoetching of corresponding mask patterns can be realized respectively aiming at exposure beams with different wavelengths. Therefore, the mask patterns in the shading layers on the two sides of the substrate can be flexibly designed according to requirements, so that the total number of masks required in the preparation process of the semiconductor device is reduced, and the production cost is effectively reduced.

In some embodiments, the first bi-color light-shielding layer comprises: a first light-shielding film and a first antireflection film which are stacked in a direction away from the substrate; the first antireflection film is positioned on a first exposure light beam incidence side and a second exposure light beam emergence side of the first light shielding film, and the first antireflection film is used for reducing reflection of the second exposure light beam; the first light shielding film is used for partially shielding the second exposure light beam and transmitting the first exposure light beam.

In some embodiments, the first light blocking film comprises: a film highly reflective of light of a second wavelength.

In some embodiments, the second dichroic light shielding layer comprises: a second light-shielding film and a second antireflection film which are stacked in a direction away from the substrate; the second antireflection film is positioned on a second exposure light beam incidence side and a first exposure light beam emergent side of the second light shielding film, and the second antireflection film is used for reducing reflection of the first exposure light beam; the second light shielding film is used for partially shielding the first exposure light beam and transmitting the second exposure light beam.

In some embodiments, the first wavelength and the second wavelength are wavelengths of light of any two different wavelengths of visible light, ultraviolet light, and deep ultraviolet light, respectively.

In some embodiments, the first mask pattern and the second mask pattern are different in pattern.

In a further aspect, an embodiment of the invention provides a lithographic apparatus comprising: an exposure machine, and a reticle as described in some embodiments above. The exposure machine is used for irradiating the first exposure beam from the first side of the mask plate and/or irradiating the second exposure beam from the second side of the mask plate.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is apparent that the drawings in the description below are only some embodiments of the present disclosure, and it is obvious for those skilled in the art that other drawings may be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic diagram of a mask blank according to one embodiment;

FIG. 2 is a schematic diagram of another mask blank according to an embodiment;

FIG. 3 is a schematic diagram of a structure of yet another mask blank provided in an embodiment;

FIG. 4 is a schematic diagram of a structure of yet another mask blank provided in an embodiment;

FIG. 5 is a schematic representation of a structure of yet another reticle provided in an embodiment;

FIG. 6 is a schematic representation of a structure of yet another reticle provided in an embodiment;

FIG. 7 is a schematic representation of a structure of yet another reticle provided in an embodiment;

FIG. 8 is a schematic representation of a structure of yet another reticle provided in an embodiment;

FIG. 9 is a schematic representation of a structure of yet another reticle provided in an embodiment;

FIGS. 10 and 11 are schematic views of a lithographic apparatus according to an embodiment, respectively.

Description of the reference numerals:

11-a substrate, 12-a first dichroic light-shielding layer, 13-a second dichroic light-shielding layer,

14-a first photoresist layer, 15-a second photoresist layer,

121-a first light shielding film, 122-a first antireflection film, 131-a second light shielding film; 132-a second antireflective film;

m1-a first mask pattern, M2-a second mask pattern; s1-a first side, S2-a second side;

1-mask plate, 2-exposure machine, 3-sample to be etched; 21-first light source, 22-second light source.

Detailed Description

To facilitate an understanding of the invention, the invention will now be described more fully hereinafter with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

In describing positional relationships, unless otherwise specified, when an element such as a layer, film or substrate is referred to as being "on one side" of another layer, it can be directly on the other layer or intervening layers may also be present. It will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

Where the terms "comprising," "having," and "including" are used herein, another component may be added unless a specific limiting term is used, such as "only," "consisting of 8230; \8230composition," etc. Unless mentioned to the contrary, terms in the singular may include the plural and are not to be construed as being one in number.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention.

It will also be understood that when interpreting elements, although not explicitly described, the elements are to be interpreted as including a range of errors which are within the acceptable range of deviation of the particular values as determined by those skilled in the art. For example, "about", "approximately" or "substantially" may mean within one or more standard deviations, and is not limited thereto.

Moreover, embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present disclosure, such that variations from the shapes shown are to be expected due to, for example, manufacturing techniques and/or tolerances. Thus, embodiments of the present disclosure should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques. The regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present disclosure. And, the drawings are not 1:1, and the relative sizes of the various elements in the drawings are drawn for illustration only and not necessarily to true scale.

Currently, with the higher integration of semiconductor devices and the smaller feature sizes of the devices, the number of reticles required for manufacturing semiconductor devices is also increasing, for example, eighty reticles are required for completing the manufacturing of one chip under a 10nm process node. Furthermore, as the size of process nodes decreases, the cost of reticles also continues to increase. Resulting in high production costs of the semiconductor device.

Accordingly, embodiments of the present disclosure provide a mask substrate, a reticle and a lithographic apparatus, which can form mask patterns on both sides of a substrate. Therefore, mask patterns on two sides of the substrate can be flexibly designed according to requirements, so that the total number of masks required in the preparation process of the semiconductor device is reduced, and the production cost can be effectively reduced.

Referring to fig. 1, some embodiments of the present disclosure provide a mask substrate, including: a substrate 11, and a first and a second dichroic

light shielding layer

12 and 13 respectively disposed on both sides of the substrate 11. The first dichroic light shielding layer 12 is used for transmitting the first exposure light beam and shielding the second exposure light beam. The second dichroic shielding layer 13 is used for transmitting the second exposure beam and shielding the first exposure beam. Wherein the wavelength of the first exposure light beam is a first wavelength; the wavelength of the second exposure light beam is a second wavelength; the first wavelength is different from the second wavelength.

Alternatively, the base 11 includes a light-transmitting substrate, such as a quartz glass substrate, a soda glass substrate, or a resin substrate.

It is understood that the "bicolor light-shielding layer" refers to: the film layer has a light filtering function, can transmit light with wavelength in a certain specific range and can shield light with wavelength in another specific range.

In the embodiment of the disclosure, the first and second dichroic light-shielding

layers

12 and 13 are respectively disposed on two sides of the substrate 11, and the first dichroic light-shielding layer is patterned to form the second mask pattern and the second dichroic light-shielding layer is patterned to form the first mask pattern when the mask is manufactured based on the filtering functions of the first and second dichroic light-shielding

layers

12 and 13. After the two-color shading layers in the mask base plate are respectively etched to form the mask plate, the exposure light beams with different wavelengths can form respective corresponding mask patterns on the wafer, so that both sides of the substrate 11 can be effectively utilized. Therefore, mask patterns in the bicolor shading layers on the two sides of the substrate 11 can be flexibly designed according to requirements, so that the total number of masks required in the preparation process of the semiconductor device is reduced, and the production cost is effectively reduced.

The first and second dichroic light-shielding

layers

12 and 13 may be selectively arranged according to actual requirements so as to achieve corresponding functions. The examples of the present disclosure are exemplary given of some possible implementations of the first and second dichroic light-shielding

layers

12 and 13 in the mask substrate, but are not limited thereto.

In some embodiments, referring to fig. 2, the first dichroic light shielding layer 12 includes: a first light-shielding film 121 and a first antireflection film 122 are stacked in a direction away from the substrate 11. The first antireflection film 122 is located on the first exposure light beam incident side and the second exposure light beam emergent side of the first light shielding film 121, and the first antireflection film 122 is used for reducing reflection of the first exposure light beam. The first light shielding film 121 is used for shielding the second exposure beam and transmitting the first exposure beam.

Here, the first antireflection film 122 is located on the first exposure light incident side of the first light shielding film 121, and means: the first antireflection film 122 is located on a side of the first light shielding film 121 close to a first light source for emitting a first exposure light beam. The first antireflection film 122 is located on the second exposure light beam outgoing side of the first light shielding film 121, and means: the first antireflection film 122 is located on a side of the first light shielding film 121 facing away from a second light source for emitting a second exposure light beam.

Optionally, the first antireflection film 122 includes: an Anti-Reflection (AR) film for a first wavelength light; this may reduce reflection of light of the first wavelength (i.e., the first exposure beam) while increasing transmission of light of the first wavelength. The first light shielding film 121 includes: a High-Reflection (HR) film for the second wavelength light; this can reflect the second wavelength light with high efficiency to reduce the transmittance of the second wavelength light, that is: the second wavelength light can be shielded.

Moreover, as can be understood from the functions of the first dichroic shading layer 12 in the foregoing embodiments, the first antireflection film 122, although being an antireflection film for the first wavelength light, may also transmit the second wavelength light, that is, does not shade the second wavelength light. Similarly, the first light shielding film 121 is a highly reflective film for the second wavelength light, but can transmit the first wavelength light, that is, does not shield the first wavelength light.

In addition, materials of the first light-shielding film 121 and the first antireflection film 122 may be selectively provided as required. For example, the first light-shielding film 121 and the first antireflection film 122 may be formed using a combination material of fluoride and oxide; further, the specific composition and ratio of the fluoride and the oxide can be adjusted to match the requirements of the first light-shielding film 121 and the first antireflection film 122. The embodiments of the present disclosure do not limit this.

In some embodiments, with continued reference to fig. 2, the second dichroic light-shielding layer 13 includes: a second light-shielding film 131 and a second antireflection film 132 are laminated in a direction away from the mask substrate 11. The second antireflection film 132 is located on the second exposure light beam incident side and the first exposure light beam emergent side of the second light shielding film 131, and the second antireflection film 132 is used for reducing reflection of the second exposure light beam. The second light shielding film 131 is for shielding the first exposure light beam and transmitting the second exposure light beam.

Here, the second antireflection film 132 is located on the second exposure light beam incident side of the second light shielding film 131, and means: the second antireflection film 132 is disposed on a side of the second light shielding film 131 close to a second light source for emitting a second exposure light beam. The second antireflection film 132 is located on the first exposure light beam exit side of the second light-shielding film 131, and means: the second anti-reflection film 132 is disposed on a side of the second light-shielding film 131 away from a first light source, which is used for emitting a first exposure light beam.

Optionally, the second antireflection film 132 includes: an Anti-Reflection (AR) film for the second wavelength light; this may reduce reflection of light at the second wavelength (i.e., the second exposure beam) while increasing transmission of light at the second wavelength. The second light-shielding film 131 includes: a High-Reflection (HR) film for light of a first wavelength; therefore, the first wavelength light can be efficiently reflected to reduce the transmissivity of the first wavelength light, and the first wavelength light can be shielded.

Moreover, as can be understood from the functions of the second dichroic light shielding layer 13 in the foregoing embodiments, the second antireflection film 132, although being an antireflection film for the second wavelength light, can also transmit the first wavelength light, that is, does not shield the first wavelength light. Similarly, the second light-shielding film 131 is a highly reflective film for the first wavelength light, but can transmit the second wavelength light, i.e., does not shield the second wavelength light.

In addition, the materials of the second light-shielding film 131 and the second antireflection film 132 may be selectively set as required. For example, the second light-shielding film 131 and the second antireflection film 132 may be formed using a combination material of fluoride and oxide; further, the specific composition and ratio of the fluoride and the oxide can be adjusted to match the requirements of the second light-shielding film 131 and the second antireflection film 132. The embodiments of the present disclosure do not limit this.

In some embodiments, the first wavelength and the second wavelength are wavelengths of two different wavelengths of visible light, ultraviolet (UV) light and Deep ultraviolet (Deep Ultra Violet, DUV) light, respectively.

Illustratively, the wavelength range of visible light is: 400nm to 760nm. The visible light may be, for example, g-line light, the wavelength of which is, for example, 436nm.

Illustratively, the wavelength of the ultraviolet light ranges from: 300nm to 400nm. The ultraviolet light may be, for example, i-line light having a wavelength of, for example, 365nm.

Illustratively, the wavelength of the deep ultraviolet light ranges from: 100nm to 300nm. The deep ultraviolet light may be, for example, krypton fluoride (KrF) excimer laser, having a wavelength of, for example, 248nm. Alternatively, the deep ultraviolet light may be, for example, an argon fluoride (ArF) excimer laser having a wavelength of, for example, 193 nm.

In the embodiment of the present disclosure, the first wavelength and the second wavelength may be wavelengths of any two wavelengths. The following exemplary provides several possible embodiments, but is not limited thereto.

Illustratively, the first wavelength is 147nm and the second wavelength is 248nm. Accordingly, the first light-shielding film 121 may be a 248nm light HR film, and the first antireflection film 122 may be a 147nm light AR film. The second light-shielding film 131 is a 147nm light HR film, and the second antireflection film 132 is a 248nm light AR film.

Illustratively, the first wavelength is 193nm and the second wavelength is 248nm. Accordingly, the first light-shielding film 121 is a 248nm HR film, and the first antireflection film 122 is a 193nm AR film. The second light-shielding film 131 is a 193nm light HR film, and the second antireflection film 132 is a 248nm light AR film.

Illustratively, the first wavelength is 248nm and the second wavelength is 365nm. Accordingly, the first light-shielding film 121 is a 365nm light HR film, and the first antireflection film 122 is a 248nm light AR film. The second light-shielding film 131 is a 248nm light HR film, and the second antireflection film 132 is a 365nm light AR film.

Illustratively, the first wavelength is 193nm and the second wavelength is 365nm. Accordingly, the first light-shielding film 121 is a 365nm light HR film, and the first antireflection film 122 is a 193nm light AR film. The second light-shielding film 131 is a 193nm light HR film, and the second antireflection film 132 is a 365nm light AR film.

It is worth mentioning that the mask substrate in the embodiment of the present disclosure is a blank mask substrate (i.e., a mask substrate on which a mask pattern is not formed yet).

In some embodiments, referring to fig. 3, the mask blank further comprises: a first photoresist layer 14 on the side of the first dichroic light-shielding layer 12 facing away from the substrate 11, and a second photoresist layer 15 on the side of the second dichroic light-shielding layer 13 facing away from the substrate 11.

In addition, referring to fig. 4, in an example where the first dichroic light shielding layer 12 includes a first light shielding film 121 and a first anti-reflection film 122, the first photoresist layer 14 is formed on a surface of the first anti-reflection film 122 away from the first light shielding film 121. In an example where the second dichroic light shielding layer 13 includes a second light shielding film 131 and a second antireflection film 132, a second photoresist layer 15 is formed on a surface of the second antireflection film 132 facing away from the second light shielding film 131.

The first photoresist layer 14 is located on a side of the first dichroic light shielding layer 12 away from the substrate 11, and can be used to form a second mask pattern, so as to transfer the second mask pattern into the first dichroic light shielding layer 12. The second photoresist layer 15 is located on a side of the second dichroic light shielding layer 13 away from the substrate 11, and can be used to form a first mask pattern, so as to transfer the first mask pattern into the second dichroic light shielding layer 13. Thereby obtaining a working mask master. The first photoresist layer 14 and the second photoresist layer 15 can be selectively disposed according to actual requirements, for example, a positive photoresist layer or a negative photoresist layer is selected.

It should be added that after the second mask pattern is formed in the first dichroic light shielding layer 12 by using the first photoresist layer 14, the first photoresist layer 14 can be stripped and removed. After the first mask pattern is formed in the second bichromal light shielding layer 13 using the second photoresist layer 15, the second photoresist layer 15 may be stripped off.

Based on the same inventive concept, referring to fig. 5, some embodiments of the present disclosure further provide a reticle, including: a substrate 11, and a first and a second dichroic

light shielding layer

12 and 13 respectively disposed on both sides of the substrate 11. The first dichroic light shielding layer 12 has a second mask pattern M2 for transmitting the first exposure beam throughout the entire region and transmitting the second exposure beam according to the transmissive region of the second mask pattern M2. The second dichroic light shielding layer 13 has a first mask pattern M1 for transmitting the second exposure beam throughout the entire region and transmitting the first exposure beam according to the transmissive region of the first mask pattern M1. Wherein the wavelength of the first exposure light beam is a first wavelength; the wavelength of the second exposure beam is a second wavelength; the first wavelength is different from the second wavelength.

It is understood that the "bicolor light-shielding layer" refers to: the film layer has a light filtering function, can transmit the light with a certain specific range and can shield the light with another specific range. The above "full-area transmission" means: the area of the corresponding film layer can be transmitted without being shielded.

In the embodiment of the disclosure, the first and second dichroic light shielding layers 12 and 13 are respectively disposed on two sides of the substrate 11, so that the first dichroic light shielding layer 12 has the second mask pattern M2, and the second dichroic light shielding layer 13 has the first mask pattern M1, thereby ensuring that both sides of the substrate 11 can be effectively utilized. Further, based on the different filter functions of the first and second dichroic light shielding layers 12 and 13, photolithography corresponding to mask patterns can be performed for exposure light beams of different wavelengths, respectively. Therefore, the mask patterns in the shading layers on the two sides of the substrate can be flexibly designed according to requirements, so that the total number of masks required in the preparation process of the semiconductor device is reduced, and the production cost is effectively reduced.

The first and second dichroic shielding layers 12 and 13 may be selectively arranged according to actual requirements so as to implement corresponding functions. In addition, in the use process of the mask, if the first mask pattern M1 is needed for photolithography, a first exposure light beam can be emitted from the side of the first dichroic light shielding layer 12 to the mask by using a first light source; if the second mask pattern M2 is needed for photolithography, the mask blank may be turned over, and a second exposure beam may be emitted from the side of the second dichroic light shielding layer 13 to the mask blank by using a second light source. Therefore, the structure of related facilities such as a related exposure machine and the like is not changed, and the corresponding photoetching of two mask patterns is realized in a mode of turning over the mask, so that the operation is convenient, and the production efficiency is improved.

The embodiments of the disclosure exemplarily show some possible implementations of the first and second dichroic shielding layers 12 and 13 in the reticle, but are not limited thereto.

In some embodiments, referring to fig. 6 and 7, the first dichroic light shielding layer 12 includes: a first light-shielding film 121 and a first antireflection film 122 are stacked in a direction away from the substrate 11. The first antireflection film 122 is located on the first exposure light beam incident side and the second exposure light beam emergent side of the first light shielding film 121, and the first antireflection film 122 is used for reducing reflection of the first exposure light beam. The first light shielding film 121 is used to partially shield the second exposure light beam and transmit the first exposure light beam.

In some embodiments, with continued reference to fig. 6 and 7, the second dichroic shielding layer 13 includes: a second light-shielding film 131 and a second antireflection film 132 are laminated in a direction away from the mask substrate 11. The second antireflection film 132 is located on the second exposure light beam incident side and the first exposure light beam emergent side of the second light shielding film 131, and the second antireflection film 132 is used for reducing reflection of the second exposure light beam. The second light shielding film 131 is for partially shielding the first exposure light beam and transmitting the second exposure light beam.

In an example where the first dichroic light-shielding layer 12 includes the first light-shielding film 121 and the first anti-reflection film 122, the second mask pattern M2 may be formed only in the first light-shielding film 121 (for example, as shown in fig. 6) or may be formed in both the first light-shielding film 121 and the first anti-reflection film 122 (for example, as shown in fig. 7). In an example in which the second dichroic light shielding layer 13 includes the second light shielding film 131 and the second anti-reflection film 132, the first mask pattern M1 may be formed only in the second light shielding film 131 (e.g., shown in fig. 6) or may be simultaneously formed in the second light shielding film 131 and the second anti-reflection film 132 (e.g., shown in fig. 7).

It should be added that in the example where the second mask pattern M2 is formed only on the first light shielding film 121, alternatively, the second mask pattern M2 may be only a pattern opening, and may also be filled with a light transmissive material therein. Similarly, in the example where the first mask pattern M1 is formed only in the second light-shielding film 131, the first mask pattern M1 may alternatively be only a pattern opening, or may be filled with a light-transmitting material therein.

In addition, the patterns of the first mask pattern M1 and the second mask pattern M2 may be selectively arranged according to actual requirements, which is not limited in the embodiment of the present disclosure.

Alternatively, referring to fig. 8 and 9, the first mask pattern M1 and the second mask pattern M2 have different patterns.

Optionally, the pattern of the first mask pattern M1 matches the first wavelength setting of the first exposure beam. The pattern of the second mask pattern M2 matches the second wavelength setting of the second exposure beam. For example, if the first wavelength of the first exposure beam is smaller than the second wavelength of the second exposure beam, the first exposure beam may have a higher lithographic resolution, and the process size of the first mask pattern M1 may be correspondingly smaller than the process size of the second mask pattern M2.

Alternatively, the orthographic projection of the first mask pattern M1 on the substrate 11 is within the orthographic projection of the second mask pattern M2 on the substrate 11, for example, as shown in fig. 5 to 7. Alternatively, the orthographic projection of the first mask pattern M1 on the substrate 11 and the orthographic projection of the second mask pattern M2 on the substrate 11 do not overlap, as shown in fig. 8 and 9, for example. However, it is also allowable that the first mask pattern M1 and the second mask pattern M2 partially overlap with each other in the orthographic projection on the substrate 11.

Referring to fig. 10 and 11, some embodiments of the present disclosure also provide a lithographic apparatus comprising: an exposure machine 2, and a reticle 1 as described in some embodiments above. The exposure machine 2 is used to irradiate an exposure beam to the reticle 1.

Alternatively, the exposure machine 2 is configured to irradiate the first exposure beam L1 from the first side S1 of the reticle 1 and/or the second exposure beam L2 from the second side S2 of the reticle 1.

Here, the exposure machine 2 for irradiating the first exposure light beam L1 and the second exposure light beam L2 may be the same exposure machine or different exposure machines. The first side S1 and the second side S2 of the mask 1 are disposed opposite to each other, the first side S1 is the side of the mask 1 where the first dichroic light shielding layer 12 is located, and the second side S2 is the side of the mask 1 where the second dichroic light shielding layer 13 is located.

In addition, referring to fig. 10, the exposure machine 2 includes a first light source 21, and the first light source 21 is used for emitting a first exposure light beam L1. The first light source 21 is located on the light incident side of the reticle 1. The sample 3 to be etched is positioned on the light-emitting side of the mask 1. In this way, the sample 3 to be etched may be subjected to photolithography based on the first light source 21 and the first mask pattern M1 in the reticle 1 to form a first etching pattern in the sample 3 to be etched.

Referring to fig. 11, the exposure machine 2 includes a second light source 22, and the second light source 22 is used for emitting a second exposure light beam L2. The second light source 22 is located on the light incident side of the reticle 1. The sample 3 to be etched is positioned on the light-emitting side of the mask 1. In this way, the sample 3 to be etched may be subjected to photolithography based on the second light source 22 and the second mask pattern M2 in the reticle 1 to form a second etching pattern in the sample 3 to be etched.

Alternatively, the first light source 21 and the second light source 22 are different light sources, or may be the same light source capable of emitting light signals with at least two different ranges of wavelengths in a time-sharing manner.

In view of the above, the reticle 1 of some of the embodiments described above is advantageous as well as the lithographic apparatus, and will not be described in detail here.

In some embodiments, the exposure machine 2 comprises an ultraviolet exposure machine. The ultraviolet exposure machine emits ultraviolet light as an exposure light beam, and for example, emits ultraviolet light having a wavelength of 300nm to 400nm as an exposure light beam. However, the exposure apparatus 2 is not limited to this, and may be, for example, a deep ultraviolet exposure apparatus.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent should be subject to the appended claims.

Claims

1. A mask template, comprising: the light source comprises a substrate, a first bicolor shading layer and a second bicolor shading layer, wherein the first bicolor shading layer and the second bicolor shading layer are respectively arranged on two sides of the substrate;

the first bicolor shading layer is used for transmitting the first exposure light beam and shading the second exposure light beam;

the second double-color shading layer is used for transmitting the second exposure light beam and shading the first exposure light beam;

wherein the wavelength of the first exposure light beam is a first wavelength; the wavelength of the second exposure light beam is a second wavelength; the first wavelength is different from the second wavelength;

the first dichroic light-shielding layer includes: a first light-shielding film and a first antireflection film which are laminated in a direction away from the substrate; the first antireflection film is positioned on a first exposure light beam incidence side and a second exposure light beam emergence side of the first light shielding film, and the first antireflection film is used for reducing reflection of the first exposure light beam; the first light shielding film is used for shielding the second exposure light beam and transmitting the first exposure light beam; the first light blocking film includes: a second wavelength light high reflection film;

the second dichroic light-shielding layer includes: a second light-shielding film and a second antireflection film which are stacked in a direction away from the substrate; the second antireflection film is positioned on a second exposure light beam incidence side and a first exposure light beam emergent side of the second light shielding film, and the second antireflection film is used for reducing reflection of the second exposure light beam; the second light shielding film is used for shielding the first exposure light beam and transmitting the second exposure light beam; the second light-shielding film includes: a film highly reflective of light of a first wavelength.

2. The mask template of claim 1, wherein the first wavelength and the second wavelength are wavelengths of any two different wavelengths of visible light, ultraviolet light, and deep ultraviolet light, respectively.

3. The mask substrate according to claim 1, further comprising: the first photoresist layer is located on one side, away from the substrate, of the first bicolor shading layer, and the second photoresist layer is located on one side, away from the substrate, of the second bicolor shading layer.

4. A reticle, comprising: the light source comprises a substrate, a first bicolor shading layer and a second bicolor shading layer, wherein the first bicolor shading layer and the second bicolor shading layer are respectively arranged on two sides of the substrate;

the first double-color shading layer is provided with a second mask pattern and is used for transmitting a first exposure light beam in the whole area and transmitting a second exposure light beam according to a light transmission area of the second mask pattern; the light shielding area of the second mask pattern is used for shielding the second exposure beam;

the second bicolor shading layer is provided with a first mask pattern and is used for transmitting the second exposure light beam in the whole area and transmitting the first exposure light beam according to a light transmission area of the first mask pattern; the light shielding region of the first mask pattern is used for shielding the first exposure light beam;

wherein the wavelength of the first exposure beam is a first wavelength; the wavelength of the second exposure light beam is a second wavelength; the first wavelength is different from the second wavelength;

the first dichroic light-shielding layer includes: a first light-shielding film and a first antireflection film which are laminated in a direction away from the substrate; the first antireflection film is positioned on a first exposure light beam incidence side and a second exposure light beam emergence side of the first light shielding film, and the first antireflection film is used for reducing reflection of the first exposure light beam; the first light shielding film is used for partially shielding the second exposure light beam and transmitting the first exposure light beam; the first light blocking film includes: a high reflection film for light of the second wavelength;

the second dichroic light-shielding layer includes: a second light-shielding film and a second antireflection film which are stacked in a direction away from the substrate; the second antireflection film is positioned on a second exposure light beam incidence side and a first exposure light beam emergent side of the second light shielding film, and the second antireflection film is used for reducing reflection of the second exposure light beam; the second light shielding film is used for partially shielding the first exposure light beam and transmitting the second exposure light beam; the second light-shielding film includes: a film highly reflective of light of a first wavelength.

5. The reticle of claim 4, wherein the first wavelength and the second wavelength are wavelengths of any two different wavelengths of visible light, ultraviolet light, and deep ultraviolet light, respectively.

6. The reticle of claim 4, wherein the first mask pattern and the second mask pattern are different in pattern.

7. A lithographic apparatus, comprising: an exposure machine and the mask blank according to any one of claims 4 to 6; the exposure machine is used for irradiating the first exposure beam from the first side of the mask plate and/or irradiating the second exposure beam from the second side of the mask plate.