CN115003016B - Extra thin copper foil with carrier for electronic circuit - Google Patents
Extra thin copper foil with carrier for electronic circuit Download PDFInfo
- Publication number
- CN115003016B CN115003016B CN202210551066.4A CN202210551066A CN115003016B CN 115003016 B CN115003016 B CN 115003016B CN 202210551066 A CN202210551066 A CN 202210551066A CN 115003016 B CN115003016 B CN 115003016B
- Authority
- CN
- China
- Prior art keywords
- layer
- carbon
- copper foil
- thin copper
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 239000011889 copper foil Substances 0.000 title claims abstract description 60
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 52
- 239000010949 copper Substances 0.000 claims abstract description 52
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 229910001339 C alloy Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 119
- MEOSMFUUJVIIKB-UHFFFAOYSA-N [W].[C] Chemical compound [W].[C] MEOSMFUUJVIIKB-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 25
- 238000009713 electroplating Methods 0.000 claims description 22
- 238000007747 plating Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000002335 surface treatment layer Substances 0.000 claims description 9
- 230000008719 thickening Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- VMWYVTOHEQQZHQ-UHFFFAOYSA-N methylidynenickel Chemical compound [Ni]#[C] VMWYVTOHEQQZHQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- 238000004380 ashing Methods 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 3
- XACAZEWCMFHVBX-UHFFFAOYSA-N [C].[Mo] Chemical compound [C].[Mo] XACAZEWCMFHVBX-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- FXNGWBDIVIGISM-UHFFFAOYSA-N methylidynechromium Chemical compound [Cr]#[C] FXNGWBDIVIGISM-UHFFFAOYSA-N 0.000 claims description 2
- 229920006254 polymer film Polymers 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 description 23
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 18
- 229910052721 tungsten Inorganic materials 0.000 description 18
- 239000010937 tungsten Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- UORVBXAKMKSXIW-UHFFFAOYSA-N [W].[C].[C] Chemical compound [W].[C].[C] UORVBXAKMKSXIW-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention relates to an extra-thin copper foil with a carrier for an electronic circuit, which consists of a carrier layer, a composite stripping layer and an ultra-thin copper layer; wherein the structure of the composite stripping layer is a carbon alloy layer-carbon alloy layer. The composite stripping layer can realize stable stripping between the ultrathin copper foil and the attached carrier layer by controlling the weight ratio of carbon to metal and controlling the binding force between the carrier layer and the ultrathin copper layer within a certain range.
Description
Technical Field
The invention belongs to the field of extra thin copper foil, and particularly relates to an extra thin copper foil with a carrier for an electronic circuit.
Background
The extra thin copper foil is a raw material which is necessary for the fields of ultra-fine circuits, IC packaging and the like, and is an important condition for lightening and thinning electronic products and highly integrating the electronic products, so the extra thin copper foil has important position and huge market in the industrial chain of high-end electronic products. However, the current manufacturing technology of the extra thin copper foil is only mastered in the enterprises of very few japan and korea, and meanwhile, the current production technology has the problems of low qualification rate, complex production process, extremely strict process control and the like, so the extra thin copper foil has extremely high price and is technically limited.
At present, the manufacturing of the extra thin copper foil is generally realized by a carrier-attached mode, namely the extra thin copper foil with the carrier. The carrier layer introduced by the carrier-attached extra-thin copper foil solves the problems of poor strength and weak support of the extra-thin copper foil, so that the extra-thin copper foil can be subjected to a series of surface treatment processing processes through the surface treatment line. The introduction of the carrier layer must be accompanied by the introduction of a release layer, i.e. the carrier layer must be successfully released from the surface of the extremely thin copper layer after pressing, so that the release force control of the release layer is extremely critical.
There are two general classes of release layer materials: the organic small molecules such as Benzotriazole (BTA) and Mercaptobenzothiazole (MBT) can be adsorbed on the surface of the carrier layer, and meanwhile, the extremely thin thickness can not cause obvious change of the conductivity of the surface of the carrier layer, so that the subsequent electroplating of the extremely thin copper layer is not influenced. The technology is mainly mastered in the hands of Japanese enterprises, and meanwhile, the technology has the problems that small molecules are easy to thermally decompose, bubbling is formed, the quality of the extra thin copper foil is seriously affected, and the like; the other type is metals (or alloys) such as chromium, titanium, molybdenum and the like and derivatives thereof, the stripping layer materials can be prepared by an electroplating method, the equipment requirement is not high, the bonding force is often greatly influenced by temperature, the situation that local adhesion cannot be stripped and the like possibly exists after a high-temperature hot pressing plate is adopted, and the metals or alloys are electroplated, which often have the characteristic of unstable components of electroplating solution, the stripping layer components are unstable in continuous production, so that the quality stability is influenced, and therefore, the method is adopted to require extremely severe solution component control and continuous process and quality monitoring, and has high cost. Thus, there is currently no good method to obtain a stable, simple and controllable release layer.
Disclosure of Invention
The invention aims to solve the technical problem of providing an ultrathin copper foil with a carrier for an electronic circuit, wherein the composite stripping layer can be controlled in a certain range by regulating the weight ratio of carbon to metal, and the bonding force between the carrier layer and the ultrathin copper layer can be controlled, so that stable stripping between the ultrathin copper foil and the attached carrier layer can be realized. The stripping effect is shown in fig. 2.
The invention provides an extra-thin copper foil with a carrier for an electronic circuit, which consists of a carrier layer, a composite stripping layer and an ultra-thin copper layer; wherein the structure of the composite stripping layer is a carbon alloy layer-carbon alloy layer.
The carrier layer is a metal foil such as copper foil, aluminum foil, nickel foil or one of polymer films such as PTFE, PI, etc., and the thickness is 12-70 μm.
The carbon alloy comprises one or more of carbon nickel, carbon molybdenum, carbon tantalum, carbon tungsten and carbon chromium.
The main component of the carbon alloy is metal, the weight ratio of the carbon alloy is not less than 70%, and the weight ratio of the carbon alloy is not more than 30%; the carbon is elemental carbon or a carbon alloy containing metal, wherein the metal content is not higher than 10%.
The thickness of the composite stripping layer is 10-1000 nm.
The composite stripping layer is prepared by adopting a vacuum coating technology, including but not limited to one or more of evaporation plating, sputtering plating, ion source auxiliary coating, chemical Vapor Deposition (CVD) and the like, and preferably adopts a magnetron sputtering coating technology.
The ultrathin copper layer consists of a vacuum copper plating layer, an electroplating thickening layer and a surface treatment layer.
The thickness of the vacuum copper plating layer is 10-1000 nm.
The electroplating thickening layer adopts acid method electroplating or alkali method electroplating, the total thickness of the electroplating thickening layer, the vacuum copper plating layer and the surface treatment layer is the set thickness of an ultrathin copper foil product, and the set thickness of the ultrathin copper foil product is 0.8-6 mu m.
The treatment method of the surface treatment layer comprises roughening, curing, blackening, ashing, passivation and silane coupling agent coating. Wherein the roughening and curing are to electroplate copper buds with controllable size on the surface of the copper foil; blackening is electroplating nickel or nickel-cobalt alloy; ashing is electroplating of zinc metal; passivation is electroplating of metal chromium, and the above process can realize physical properties of binding force, oxidation resistance and the like of the copper foil in the application of the electronic circuit field.
The preparation process of the surface treatment layer also comprises the processes of acid washing, water washing, squeezing, drying, purging, cooling and the like which are involved before and after various metal electroplating. The thickness of the surface treatment layer is 0.1 g-10 g/m 2 。
The whole structure of the extra thin copper foil is shown in figure 1.
Advantageous effects
(1) The composite stripping layer can realize stable stripping between the ultrathin copper foil and the attached carrier layer by controlling the weight ratio of carbon to metal and controlling the binding force between the carrier layer and the ultrathin copper layer within a certain range.
(2) The invention adopts vacuum coating technology, has even thickness and compact and continuous film layer, and the produced extra-thin copper foil with carrier has stable and continuous quality; the preparation process of the stripping layer has no pollution process and is a green preparation process.
Drawings
FIG. 1 is a cross-sectional view of an extra thin copper foil with carrier according to the present invention;
FIG. 2 is a cross-sectional view of the structure of the carrier-attached extra thin copper foil composite release layer when peeled;
wherein: 1 is a carrier layer, 2 is a carbon alloy layer, 3 is a carbon layer, 4 is a carbon alloy layer, 5 is a vacuum copper plating layer, 6 is an electroplating thickening layer, and 7 is a surface treatment layer.
Detailed Description
The invention will be further illustrated with reference to specific examples. It is to be understood that these examples are illustrative of the present invention and are not intended to limit the scope of the present invention. Further, it is understood that various changes and modifications may be made by those skilled in the art after reading the teachings of the present invention, and such equivalents are intended to fall within the scope of the claims appended hereto.
Example 1 (copper foil, carbon tungsten alloy-carbon tungsten alloy-copper)
The copper foil with the width of 1000mm and the thickness of 18 μm is sequentially passed through a pickling tank, a rinsing tank, a pure water spraying tank and an oven to obtain a pretreated sample. Transferring the sample into a magnetron sputtering coating cavity, vacuumizing until the background vacuum is 6.0 multiplied by 10 -3 Pa, ar is introduced, the vacuum degree is regulated to be 0.1-0.6 Pa, ar plasma treatment is performed, the power is 1KW, and a carbon tungsten alloy layer 50nm, a carbon layer 20nm, a carbon tungsten alloy layer 30nm and a copper layer 30nm are sequentially sputtered and deposited, wherein the carbon tungsten alloy comprises 80% of tungsten by weight and 20% of carbon by weight. Obtaining the carbon tungsten alloy-carbon tungsten alloy layer-copper layer composite film layer structure. And (3) transferring the sample into a plating bath, sequentially passing through an alkaline copper plating solution and an acid copper plating solution to obtain an ultrathin copper foil with the thickness of 3 mu m, sequentially passing through a Cu, ni, zn, cr salt solution, electrodepositing a dissimilar metal layer, finally coating a silane coupling agent on the surface, and drying to obtain the ultrathin copper foil with the carrier. Pressing with prepreg at 240 deg.C for 4 hr, and according to GB/T29847-2013 formulaThe separation force of the carrier layer was measured by the method.
Example 2 (PI, carbon tungsten alloy-carbon tungsten alloy-copper)
Polyimide film with a width of 900mm and a thickness of 15 μm was transferred to a magnetron sputtering coating chamber and pretreated before PVD coating in accordance with example 1. And sequentially sputtering and depositing a carbon-tungsten alloy layer of 50nm, a carbon layer of 20nm, a carbon-tungsten alloy layer of 30nm and a copper layer of 30nm, wherein the composition of the carbon-tungsten alloy is 80% by weight and the carbon weight is 20% by weight, so as to obtain the carbon-tungsten alloy-copper layer composite film structure. And then transposed to an electroplating treatment line, and the electroplating thickening and surface treatment process is the same as that of the embodiment 1, so as to obtain an extra-thin copper foil product with an attached carrier. And (3) pressing the carrier layer and the prepreg at a high temperature at 240 ℃ for 4 hours, and testing the separating force of the carrier layer according to the GB/T29847-2013 method.
Example 3 (copper foil, carbon Nickel alloy-copper)
Example 3 the procedure was the same as in example 1, except that the alloy used was a carbon-nickel alloy having a composition of 80% nickel by weight and 20% carbon by weight.
Example 4 (copper foil, carbon tantalum alloy-carbon tantalum alloy-copper)
Example 4 the procedure was the same as in example 1, except that the alloy used was a carbon-tantalum alloy having a composition of 80% by weight tantalum and 20% by weight carbon.
Comparative example 1 (copper foil, carbon tungsten alloy-carbon-copper)
Comparative example 1 was identical to example 1 except that there was no carbon tungsten alloy layer between the carbon layer and the vacuum copper plating layer.
Comparative example 2 (copper foil, carbon tungsten alloy-copper)
Comparative example 2 was the same as example 1 except that there was no carbon layer between the two carbon tungsten alloy layers.
Comparative example 3 (copper foil, carbon-carbon tungsten alloy-copper)
Comparative example 3 is the same as example 1 except that there is no carbon tungsten alloy layer between the support layer and the carbon layer.
Comparative example 4 (copper foil, carbon tungsten alloy-carbon tungsten alloy)
Comparative example 4 was the same as example 1 except that no vacuum copper plating was used.
TABLE 1 binding force between the support layer and the ultra-thin copper layer in examples 1 to 4 and comparative examples 1 to 4
1. From comparative examples 1 and 3, the carbon layer is used as a stripping layer, has small bonding force with the interface of the copper layer, is easy to form large-area stripping, and cannot meet the requirement of the subsequent electroplating thickening experiment.
2. Experimental data of example 1 and comparative example 2 show that the carbon layer can realize stable stripping performance, and the bonding force between the carbon-tungsten alloy and copper is large.
3. In comparison of experimental data of example 1 and comparative example 4, copper layer thickness unevenness easily occurs in the copper layer directly electroplated on the carbon tungsten alloy layer, and abnormal conditions such as tearing occur in the ultra-thin copper foil in the peeling process are caused.
4. The carbon alloy-carbon alloy-copper can be stably peeled off by adopting a vacuum coating technology, and the peeling strength is small. Vacuum copper plating, compact and uniform copper layer. The ultra-thin copper layer which is thickened through electroplating is compact in copper layer, good in uniformity and capable of meeting the requirements of subsequent production and transportation.
Examples 5 to 10 below were conducted in order to investigate the influence of the difference in carbon and metal contents in the composite release layer on the separating force between the carrier layer and the ultra-thin copper layer.
Example 5 (copper foil, carbon tungsten alloy-carbon tungsten alloy-copper)
Example 5 corresponds to the procedure of example 1, with the sole difference that the carbon content of the carbon-tungsten alloy layer is 10% and the tungsten content is 90%.
Example 6 (copper foil, carbon tungsten alloy-carbon tungsten alloy-copper)
Example 6 corresponds to the procedure of example 1, with the sole difference that the carbon content in the carbon-tungsten alloy layer is 30% and the tungsten content is 70%.
Example 7 (copper foil, carbon tungsten alloy-carbon tungsten alloy-copper)
Example 7 corresponds to the procedure of example 1, with the sole difference that the carbon content in the carbon-tungsten alloy layer is 40% and the tungsten content is 60%.
Example 8 (copper foil, carbon tungsten alloy-carbon tungsten alloy layer (carbon 95%, tungsten 5%) -carbon tungsten alloy-copper)
Example 8 corresponds to the procedure of example 1, the only difference being that the carbon layer has 5% tungsten doping.
Example 9 (copper foil, carbon tungsten alloy-carbon tungsten alloy layer (carbon 90%, tungsten 10%) -carbon tungsten alloy-copper)
Example 9 corresponds to the procedure of example 1, the only difference being that the carbon layer has 10% tungsten doping.
Example 10 (copper foil, carbon tungsten alloy-carbon tungsten alloy layer (carbon 85%, tungsten 15%) -carbon tungsten alloy-copper)
Example 10 corresponds to the procedure of example 1, the only difference being that the carbon layer has 15% tungsten doping.
TABLE 2 bonding force between the support layer and the ultra-thin copper layer in examples 5 to 10
1. The content ratio of carbon to metal elements in the carbon-tungsten alloy layer is regulated, and the binding force of the carbon and the carbon alloy interface layer can be regulated. The carbon content in the carbon-tungsten alloy is increased, and the binding force is gradually increased; when the carbon content in the carbon-tungsten alloy is more than 30%, the binding force is larger, and the carbon-tungsten alloy is difficult to completely strip.
2. The carbon layer is doped with metal elements to influence the binding force of the carbon alloy layer and the carbon layer. The higher the metal content of the carbon layer doping, the greater the binding force. When the metal content in the carbon layer is more than 10%, the ultrathin copper foil is difficult to peel, and the ultrathin copper foil is easy to tear.
To sum up:
the invention adopts vacuum coating deposition technology to deposit the carbon alloy-carbon alloy film layer structure of the composite stripping layer, and realizes that the separating force of the carrier layer is adjustable within a certain range by controlling the content ratio of carbon to metal. According to the structural design and principle in the invention, the extra-thin copper foil with the carrier can be produced with different carrier separating forces, meets the requirements of various clients, and has great production practical value.
Claims (8)
1. An extra thin copper foil with carrier for electronic circuit, which is characterized in that: consists of a carrier layer, a composite stripping layer and an ultrathin copper layer; wherein the structure of the composite stripping layer is a carbon alloy layer-carbon alloy layer; the main component of the carbon alloy is metal, the weight ratio of the carbon alloy is not less than 70%, and the weight ratio of the carbon alloy is not more than 30%; the carbon is simple substance carbon or carbon alloy containing metal, wherein the metal content is not higher than 10%; the ultrathin copper layer consists of a vacuum copper plating layer, an electroplating thickening layer and a surface treatment layer.
2. The extra thin copper foil according to claim 1 wherein: the carrier layer is a metal foil or a polymer film, and the thickness is 12-70 mu m.
3. The extra thin copper foil according to claim 1 wherein: the carbon alloy comprises one or more of carbon nickel, carbon molybdenum, carbon tantalum, carbon tungsten and carbon chromium.
4. The extra thin copper foil according to claim 1 wherein: the thickness of the composite stripping layer is 10-1000 nm.
5. The extra thin copper foil according to claim 1 wherein: the composite stripping layer is prepared by adopting a vacuum coating technology.
6. The extra thin copper foil according to claim 1 wherein: the thickness of the vacuum copper plating layer is 10-1000 nm.
7. The extra thin copper foil according to claim 1 wherein: the electroplating thickening layer adopts acid method electroplating or alkali method electroplating, the total thickness of the electroplating thickening layer, the vacuum copper plating layer and the surface treatment layer is the set thickness of an ultrathin copper foil product, and the set thickness of the ultrathin copper foil product is 0.8-6 mu m.
8. The extra thin copper foil according to claim 1 wherein: the treatment method of the surface treatment layer comprises roughening, curing, blackening, ashing, passivation and silane coupling agent coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210551066.4A CN115003016B (en) | 2022-05-18 | 2022-05-18 | Extra thin copper foil with carrier for electronic circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210551066.4A CN115003016B (en) | 2022-05-18 | 2022-05-18 | Extra thin copper foil with carrier for electronic circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115003016A CN115003016A (en) | 2022-09-02 |
| CN115003016B true CN115003016B (en) | 2024-01-26 |
Family
ID=83027633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210551066.4A Active CN115003016B (en) | 2022-05-18 | 2022-05-18 | Extra thin copper foil with carrier for electronic circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115003016B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006207032A (en) * | 2002-10-31 | 2006-08-10 | Furukawa Circuit Foil Kk | Ultrathin copper foil with carrier and method for manufacturing the same, and printed wiring board using ultrathin copper foil with carrier |
| CN111629525A (en) * | 2019-02-28 | 2020-09-04 | 卢森堡电路箔片股份有限公司 | Composite copper foil and method for producing same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6955986B2 (en) * | 2003-03-27 | 2005-10-18 | Asm International N.V. | Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits |
| US7311946B2 (en) * | 2003-05-02 | 2007-12-25 | Air Products And Chemicals, Inc. | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes |
| TW200514861A (en) * | 2003-10-24 | 2005-05-01 | Jinn P Chu | Sputtered copper films containing tungsten carbide for improving electrical conductivity, thermal stability and hardness properties |
-
2022
- 2022-05-18 CN CN202210551066.4A patent/CN115003016B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006207032A (en) * | 2002-10-31 | 2006-08-10 | Furukawa Circuit Foil Kk | Ultrathin copper foil with carrier and method for manufacturing the same, and printed wiring board using ultrathin copper foil with carrier |
| CN111629525A (en) * | 2019-02-28 | 2020-09-04 | 卢森堡电路箔片股份有限公司 | Composite copper foil and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115003016A (en) | 2022-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI732471B (en) | Composite copper foil and method of fabricating the same | |
| US20100190029A1 (en) | Metal layer laminate having roughened metal surface layer and method for producing the same | |
| JP2003181970A (en) | Electrolytic copper foil with carrier foil, method of manufacturing the same, and copper-clad laminate using electrolytic copper foil with carrier foil | |
| TW200909203A (en) | Metal-laminated polyimide substrate, and method for production thereof | |
| CN112795964A (en) | Ultrathin strippable composite copper foil and preparation method thereof | |
| US5461203A (en) | Electronic package including lower water content polyimide film | |
| CN115233262A (en) | Preparation method of ultra-thin copper foil with carrier | |
| EP1680534A4 (en) | Support layer for thin copper foil | |
| CN115003016B (en) | Extra thin copper foil with carrier for electronic circuit | |
| JPH07197239A (en) | Production of metal-laminated polyimide film | |
| CN113584537B (en) | Ultra-thin copper foil with resin layer and extremely low roughness and manufacturing method thereof | |
| CN114900975A (en) | Ultrathin copper foil for electronic circuit and preparation method thereof | |
| CN111962035A (en) | Magnesium-based or aluminum-based filter cavity coating and preparation method thereof | |
| Huang et al. | Polyimide metallization using nickel nano-film as both catalyst and barrier layer of copper electroless deposition | |
| CN116641018A (en) | Extra thin copper foil with carrier and its preparing process | |
| WO2010074056A1 (en) | Flexible laminate and flexible electronic circuit substrate formed using the same | |
| Li et al. | Activation of non-metallic substrates for metal deposition using organic solutions | |
| TWI482878B (en) | Acidic electroless copper plating system and copper plating method using the same | |
| CN114672763B (en) | A method for improving the adhesion of AlCrN coating on cermet surface | |
| KR101203308B1 (en) | A two layer film, a method of manufacturing a two layer film, and a method of manufacturing a printed circuit board | |
| CN114318217B (en) | Preparation method of niobium diselenide film with ultralow friction and low electric noise under vacuum sliding electric contact condition | |
| CN100542374C (en) | 2 layers of flexible substrate and manufacture method thereof | |
| JP4762533B2 (en) | Copper metallized laminate and method for producing the same | |
| KR20150062557A (en) | Method of forming amorphous alloy film and printed wiring board obtained by said forming method | |
| CN118854396A (en) | A preparation method of peelable ultra-thin carrier copper foil and its product |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |