CN114975719A - LED display panel wiring structure and manufacturing method thereof - Google Patents

Abstract

The present invention relates to the technical field of LED wiring devices, and provides an LED display panel wiring structure and a manufacturing method thereof, including a transparent substrate; a light-transmitting buffer layer covering the transparent substrate; the light-transmitting buffer layer is insulating The first conductive pad is arranged on the light-transmitting buffer layer; the second conductive pad is arranged on the light-transmitting buffer layer; the second conductive pad has a first conductive part; The light-transmitting insulating adhesive layer is laid on the light-transmitting buffer layer; the light-transmitting insulating adhesive layer has a predetermined bonding area covered on the first conductive part; the conductive layer is laid on the light-transmitting insulating layer on the adhesive layer; the conductive layer has a second conductive part covering the predetermined adhesive area; and a welding part, through which the laser passes through the transparent substrate and the light-transmitting buffer layer in sequence and welds the The first conductive part and the second conductive part are formed.

Description

LED display panel wiring structure and manufacturing method thereof

technical field

The invention belongs to the technical field of LED wiring devices, and more particularly, relates to a wiring structure of an LED display panel and a manufacturing method thereof.

Background technique

LED display has been applied to all aspects of people's life. LED chips usually need to be mounted on a drive substrate with metal lines, and the metal lines on the substrate supply power (or signal transmission) to the LED. Usually, the metal circuit layer on the substrate is made by physical deposition, evaporation, electroplating or printing, etc. However, these methods are difficult to make a thicker metal layer with a thickness of more than 50um, resulting in a higher resistance of the metal circuit itself and a higher manufacturing cost .

LED is a current-driven device, and the metal circuit needs to provide a large constant current to obtain a good display effect. However, with the increase of the length of the power supply trace, the metal line has a large voltage drop, which leads to the unevenness of the LED pixel light emission.

Therefore, a low-cost and low-resistance LED display panel wiring structure and a manufacturing method thereof are particularly important, especially in the application field of transparent LED display.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a wiring structure of an LED display panel to solve the technical problem in the prior art that a large voltage drop of the LED display panel affects the display uniformity.

In order to achieve the above purpose, the technical solution adopted in the present invention is to provide an LED display panel wiring structure including:

transparent substrate;

a light-transmitting buffer layer, a light-transmitting buffer layer covering the transparent substrate;

a first conductive pad, disposed on the light-transmitting buffer layer;

a second conductive pad, a second conductive pad disposed on the light-transmitting buffer layer; the second conductive pad has a first conductive portion;

a light-transmitting insulating adhesive layer, which is laid on the light-transmitting buffer layer; the light-transmitting insulating adhesive layer has a predetermined adhesive area covering the first conductive part;

a conductive layer, laid on the light-transmitting insulating adhesive layer; the conductive layer has a second conductive portion covering the predetermined adhesive area; and

For the welding part, the laser passes through the transparent substrate and the light-transmitting buffer layer in sequence and welds the first conductive part and the second conductive part.

Further, the transparent substrate is made of any one of glass, transparent PI, PEN, and PET.

Further, the light-transmitting buffer layer is made of any one of SiN, SiOx, and AlOx.

Further, the first conductive pad is made of any one of Cu, Ni, Au, ITO, Mo, and Ag; the second conductive pad is: Cu, Ni, Au, ITO, Mo, Ag is made of any material.

Further, the light-transmitting insulating adhesive layer is: a transparent polymer glue material.

Further, the conductive layer is: Cu foil or Al foil.

Further, the first conductive portion of the second conductive pad is provided with a plurality of light through holes.

Further, a plurality of the light passage holes are in a honeycomb shape.

Further, the conductive layer has a corner portion, and the corner portion has a chamfer.

The present invention also provides a manufacturing method of the wiring structure of the LED display panel, which is characterized by comprising:

S1: prepare a transparent substrate;

S2: covering a light-transmitting buffer layer on the transparent substrate;

S3: respectively setting a first conductive pad and a second conductive pad on the light-transmitting buffer layer;

S4: laying a light-transmitting insulating adhesive layer on the light-transmitting buffer layer, and the predetermined bonding area on the light-transmitting insulating adhesive layer covers the first conductive portion on the second conductive pad;

S5: laying a conductive layer on the light-transmitting insulating adhesive layer, and the second conductive portion on the conductive layer covers the predetermined bonding area;

S6: Passing through the transparent substrate and the light-transmitting buffer layer in sequence with a laser, and welding the first conductive portion and the second conductive portion.

The beneficial effect of the LED display panel wiring structure provided by the present invention is that compared with the prior art, in the LED display panel wiring structure provided by the present invention, the transparent substrate is covered with a light-transmitting buffer layer, and the light-transmitting buffer layer is arranged with spacers The first conductive pad and the second conductive pad are provided, and the LED chip can be powered (or signal transmitted) through the first conductive pad and the second conductive pad. The light-transmitting buffer layer can prevent the alkali metal ions na+, k+, etc. in the glass substrate from diffusing to other functional layers at high temperature, affecting the performance of the film, and can also prevent the penetration of water and oxygen in the flexible substrate (in addition, transparent The light buffer layer also avoids direct conduction between the first conductive pad and the second conductive pad). Part of the area on the second conductive pad is the first conductive part, the light-transmitting insulating adhesive layer is laid on the light-transmitting buffer layer, and part of the area on the light-transmitting insulating adhesive layer is the predetermined adhesive area, and the predetermined adhesive area covers The first conductive part, the conductive layer is laid and bonded on the light-transmitting insulating adhesive layer, a part of the area on the conductive layer is the second conductive part, and the second conductive part covers the predetermined bonding area, that is, the predetermined bonding area is located in the first conductive part. between the conductive part and the second conductive part, and the predetermined bonding area bonds the first conductive part and the second conductive part together; the laser passes through the transparent substrate and the light-transmitting buffer layer in turn and burns the first conductive part and the second conductive part. The second conductive part, the first conductive part and the second conductive part are melted and welded together under laser burning (in one embodiment, the predetermined bonding area is melted or vaporized during the welding process) to form a welded part; Direct welding between the first conductive part and the second conductive part makes it easy to maintain the stability of the voltage between the conductive layer and the second conductive pad, and the use of low-resistance metal foil for the conductive layer greatly reduces the voltage drop of the metal circuit layer and improves the The uniformity of light emission of LED display panel is improved. In addition, laser welding only heats locally, and it is not easy to cause large-area heating on the conductive layer to cause large-area melting and affect the reliability of conduction.

Description of drawings

In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only for the present invention. In some embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

1 is a schematic diagram of a front cross-sectional structure of a wiring structure of an LED display panel provided by an embodiment of the present invention;

2 is a schematic structural diagram of a transparent substrate, a light-transmitting buffer layer, a first conductive pad, and a second conductive pad according to an embodiment of the present invention;

3 is a schematic structural diagram of covering a light-transmitting insulating adhesive layer and a conductive layer provided by an embodiment of the present invention;

4 is a schematic structural diagram of an etched conductive layer provided by an embodiment of the present invention;

5 is a schematic structural diagram of an etched light-transmitting insulating adhesive layer according to an embodiment of the present invention;

6 is a schematic top-view structural diagram of an LED (ie, RBG in the figure) wiring structure provided by an embodiment of the present invention;

Fig. 7 is the enlarged schematic diagram one at A in Fig. 6;

Fig. 8 is the enlarged schematic diagram II at A in Fig. 6;

Fig. 9 is the enlarged schematic diagram three at A in Fig. 6;

10 is a schematic diagram of the arrangement of a wiring structure of an LED display panel provided by an embodiment of the present invention;

Fig. 11 is the enlarged schematic diagram at B in Fig. 10;

FIG. 12 is a schematic diagram of a TFT Mini-LED pixel wiring structure.

FIG. 13 is a schematic diagram of a manufacturing process of a wiring structure of an LED display panel according to an embodiment of the present invention.

Among them, each reference sign in the figure:

1-transparent substrate; 2-light-transmitting buffer layer; 31-first conductive pad; 32-second conductive pad; 321-first conductive part; 3211-light-through hole; 4-light-transmitting insulating adhesive layer 5-conductive layer; 51-second conductive part; 6-welding part; 7-pixel signal line; 8-LED chip; 9-TFT structure.

Detailed ways

In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

It should be noted that, in the description of the embodiments of the present application, unless otherwise stated, "/" means or means, for example, A/B can mean A or B; "and/or" in this document is only a kind of Describing the association relationship of associated objects, it means that there can be three kinds of relationships, for example, A and/or B, which can mean that A exists alone, A and B exist at the same time, and B exists alone. Among them, A and B can be singular or plural respectively.

It is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top" , "bottom", "inside", "outside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the indicated A device or element must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention.

In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, "plurality" means two or more, unless otherwise expressly and specifically defined.

Please refer to FIG. 1 to FIG. 11 together, and now the wiring structure of the LED display panel provided by the present invention will be described. The wiring structure of the LED display panel includes: a transparent substrate 1 , a light-transmitting buffer layer 2 covering the transparent substrate 1 , a first conductive pad 31 arranged on the light-transmitting buffer layer 2 , and a first conductive pad 31 arranged on the light-transmitting buffer layer 2 and has the second conductive pad 32 of the first conductive portion 321, the light-transmitting insulating adhesive layer 4 laid on the light-transmitting buffer layer 2 and having a predetermined bonding area covering the first conductive portion 321, and the light-transmitting insulating adhesive layer 4 laid on the transparent buffer layer 2 The conductive layer 5 on the optical insulating adhesive layer 4 and having the second conductive portion 51 covering the predetermined bonding area; and the first conductive portion 321 is welded through the transparent substrate 1 and the light-transmitting buffer layer 2 in sequence by laser light and the welding portion 6 formed by the second conductive portion 51 .

In this way, the transparent substrate 1 is covered with the light-transmitting buffer layer 2 , the first conductive pad 31 and the second conductive pad 32 are arranged at intervals on the light-transmitting buffer layer 2 , and the LED chip 8 can pass through the first conductive pad 31 and the second conductive pad 32 for power supply (or signal transmission). The light-transmitting buffer layer 2 can prevent the alkali metal ions na+, k+, etc. in the glass substrate (such as the transparent substrate 1) from diffusing to other functional layers at high temperature, which affects the performance of the film, and can also be prevented in the flexible substrate. Permeation of water and oxygen (in addition, the light-transmitting buffer layer 2 also prevents direct conduction between the first conductive pad 31 and the second conductive pad 32). A part of the area on the second conductive pad 32 is the first conductive part 321 , the light-transmitting insulating adhesive layer 4 is laid on the light-transmitting buffer layer 2 , and a part of the area on the light-transmitting insulating adhesive layer 4 is a predetermined bonding area, The predetermined bonding area covers the first conductive part 321, the conductive layer 5 is laid and bonded on the light-transmitting insulating adhesive layer 4, and a part of the area on the conductive layer 5 is the second conductive part 51, and the second conductive part 51 covers the predetermined bonding layer. The contact area, that is, the predetermined bonding area is located between the first conductive part 321 and the second conductive part 51, and the predetermined bonding area bonds the first conductive part 321 and the second conductive part 51 together; the laser passes through the transparent After the substrate 1 and the light-transmitting buffer layer 2 are fired, the first conductive portion 321 and the second conductive portion 51 are fused, and the first conductive portion 321 and the second conductive portion 51 are melted and welded together under laser firing (in one embodiment In the process of welding, the predetermined bonding area is melted or vaporized) to form the welding part 6; due to the direct welding between the first conductive part 321 and the second conductive part 51, it is easy to maintain the connection between the conductive layer 5 and the second conductive pad 32 The conductive layer 5 adopts low-resistance metal foil, which greatly reduces the voltage drop of the metal circuit layer, and improves the uniformity of light emission of the LED display panel. In addition, laser welding only heats locally, and it is not easy to cause large-area heating on the conductive layer 5 to cause large-area melting and affect the reliability of conduction.

In one embodiment, light transmission: can be light beams or natural light for a specific wavelength. In one embodiment, light transmittance: the transmittance of the predetermined light beam may exceed ninety percent.

In one embodiment, the transparent substrate 1 is a light-transmitting plate.

In one embodiment, the LED display panel is an LED display screen.

In one embodiment, the first conductive portion 321 and the second conductive portion 51 are directly welded, so that the conductive connection between the first conductive portion 321 and the second conductive portion 51 is more stable and reliable.

In one embodiment, the number of the first conductive pads 31 is multiple.

In one embodiment, the first conductive pad 31 is a conductive metal layer laid on the light-transmitting buffer layer 2 .

In one embodiment, the number of the second conductive pads 32 is plural.

In one embodiment, the second conductive pad 32 is a conductive metal layer laid on the light-transmitting buffer layer 2 .

In one embodiment, the light-transmitting buffer layer 2 is prepared by PECVD.

In one embodiment, the conductive layer 5 is a prefabricated Cu metal foil.

In one embodiment, the thickness of the Cu metal foil of the conductive layer 5 is 5um˜100um.

In one embodiment, the width of the Cu metal foil of the conductive layer 5 is greater than the thickness, which is convenient for etching.

In one embodiment, the first conductive pad 31 is prepared by PVD or vacuum sputtering. In one embodiment, the thickness of the first conductive pad 31 is 0.1 μm˜5 μm.

In one embodiment, the second conductive pad 32 is prepared by PVD or vacuum sputtering. In one embodiment, the thickness of the second conductive pad 32 is 0.1um˜5um.

In one embodiment, the conductive layer 5 is laid with a pattern without convex and concave, which facilitates the etching of the metal foil.

In one embodiment, the incident direction of the laser is perpendicular to the transparent substrate 1 .

In one embodiment, the welding portion 6 is located in the central area of the predetermined bonding area. In one embodiment, in the extending direction of the predetermined bonding area, the maximum width of the welding portion 6 is greater than the minimum width from the welding portion 6 to the edge of the predetermined bonding area.

In one embodiment, the contact position of the LED with the first conductive pad 31 is closer to the light-transmitting buffer layer 2 than the conductive layer 5 . In one embodiment, the contact position of the LED and the second conductive pad 32 is closer to the light-transmitting buffer layer 2 than the conductive layer 5 .

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the transparent substrate 1 is: glass, transparent PI (PI: polyimide), PEN (PEN : polyethylene naphthalate), PET (PET: polyethylene terephthalate) in any material. In this way, the light transmittance is good.

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the light-transmitting buffer layer 2 is: SiN, SiOx (silicon oxide), AlOx (aluminum oxide) Made of any material. In this way, the light transmittance is good.

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the first conductive pad 31 is: Cu, Ni, Au, ITO (ITO: tin-doped indium oxide) ), Mo, and Ag. The second conductive pad 32 is made of any one of Cu, Ni, Au, ITO (ITO: tin-doped indium oxide), Mo, and Ag.

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the light-transmitting insulating adhesive layer 4 is: a transparent polymer adhesive material. In this way, the light transmittance is good and the adhesiveness is good.

In one embodiment, the transparent polymer glue is silicone rubber or epoxy glue.

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the conductive layer 5 is: Cu foil or Al foil. In this way, the electrical conductivity is good.

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the first conductive portion 321 of the second conductive pad 32 is provided with a plurality of light through holes 3211 . In this way, it is convenient for the laser light to pass through, and in addition, it is also convenient for the edge of the light-passing hole 3211 to be welded with the conductive layer 5 to form the welding portion 6 .

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the plurality of light-passing holes 3211 are in a honeycomb shape. In this way, the transmission of the laser light is facilitated.

In one embodiment, the light spot of the laser covers at least two light-transmitting holes 3211 .

In one embodiment, the edge of the honeycomb-shaped light-passing hole 3211 is melted by laser and then welded with the conductive layer 5 to form a honeycomb-shaped welding portion 6, which is more firm and facilitates heat dissipation.

In one embodiment, the focal point of the laser is on the conductive layer 5 .

In one embodiment, each light-passing hole 3211 has a plurality of ribs with the same material as the first conductive portion 321, and one end of the plurality of ribs converges in the central area of the light-passing hole 3211, so that the laser can be simultaneously Solder the plurality of ribs in the light-through hole 3211 ; after the plurality of ribs are welded to the conductive layer 5 , the plurality of ribs can concentrate the stress on the central area of the light-through hole 3211 . In one embodiment, the light-transmitting holes 3211 are polygons (for example, hexagons), the number of ribs is the same as the number of corners of the polygons, each rib corresponds to a plurality of corners one-to-one, and the other ends of each rib are respectively Connect with the corresponding corner; in this way, the light-passing hole 3211 of the polygonal structure is relatively stable, and when the edges of the light-passing hole 3211 are pulled along their respective extending directions, the adjacent edges will not be directly pulled in the extending direction, and the ribs are connected to the polygonal The corners are not easily deformed, which improves the firmness and reliability of the rib connection. In one embodiment, one-third of the regions of any two adjacent hexagons are coincident, so that the stress can be shared between adjacent hexagons. In one embodiment, at least two sides of each hexagon are ribs in adjacent hexagons, and the side of one hexagon becomes ribs in adjacent hexagons, so that a hexagonal The stress on the sides of the polygon can be distributed to the corners and central areas of the adjacent hexagons, which improves the welding stability of the hexagonal structure.

In one embodiment, the light-passing hole 3211 is circular.

Further, please refer to FIG. 1 to FIG. 11 , as a specific embodiment of the wiring structure of the LED display panel provided by the present invention, the conductive layer 5 has a corner portion, and the corner portion has a chamfer. In this way, signal integrity problems caused by sudden changes in characteristic impedance at right-angle bends are avoided. .

In one embodiment, the chamfer radius r is not less than 1 pixel pitch.

In one embodiment, the unit module of the LED is 200*200pitch=1mm, assuming that a copper process is used as the power trace (ie, the conductive layer 5), the resistivity of copper ρ _Cu =1.75*10 ^-8 Ω·m; the LED transparent display Array design line width 100um, pixel current 0.2mA (corresponding to 5000nit display brightness); 5000nit, R→1500nit, G→3000nit, B→500nit; R light intensity 0.0016535cd→brightness 1653cd/m2→current 0.13mA; G light intensity 0.003cd→brightness 3005cd/m2→current 0.031mA; B light intensity 0.0005cd→brightness 506cd/m2→current 0.028mA; the total current is about 0.2mA.

In one embodiment, if the power supply trace adopts a common 300nm Cu process; then the 300nm Cu sheet resistance R1=ρ _Cu *10-3/(10-3*3* ^10-7 )≈0.06Ω; a single power supply line of the unit module The voltage drop of the line V _drop = (200+199+...+1)*0.2mA*(0.06Ω*1000/100)≈2.4V; the voltage drop of 2.4V will seriously affect the normal display of the transparent LED array.

In one embodiment, if the power trace adopts Cu foil with a thickness of 50um; then the Cu foil sheet resistance R2=ρ _Cu *10-3/(10-3*5* ^10-5 )≈3.5* ^10-4 Ω; The voltage drop of a single power supply trace of the unit module V _drop = (200+199+...+1)*0.2mA*(3.5*10 ^-4 Ω*1000/100)≈0.014V; the voltage drop of 0.014V hardly affects The transparent LED array is displayed normally.

In one embodiment, please refer to FIG. 12, the TFT Mini-LED pixel wiring structure adopts the wiring structure of the same principle as the above-mentioned LED display panel wiring structure, the pixel signal line 7 provides signals for the TFT structure 9, and the area C and the area D are respectively The structure is the same as that at A in Figure 6.

Referring to FIG. 13 , the present invention also provides a method for manufacturing a wiring structure of an LED display panel, including: S1: preparing a transparent substrate 1; S2: covering the transparent substrate 1 with a light-transmitting buffer layer 2; S3: covering the transparent substrate 1 The first conductive pads 31 and the second conductive pads 32 are respectively arranged on the light buffer layer 2; S4: A light-transmitting insulating adhesive layer 4 is laid on the light-transmitting buffer layer 2, and the light-transmitting insulating adhesive layer 4 is pre-bonded. The contact area covers the first conductive portion 321 on the second conductive pad 32; S5: The conductive layer 5 is laid on the light-transmitting insulating adhesive layer 4, and the second conductive portion 51 on the conductive layer 5 covers the predetermined bonding area; S6: The first conductive part 321 and the second conductive part 51 are welded by laser passing through the transparent substrate 1 and the light-transmitting buffer layer 2 in sequence. In this way, the transparent substrate 1 is covered with the light-transmitting buffer layer 2 , the first conductive pad 31 and the second conductive pad 32 are arranged at intervals on the light-transmitting buffer layer 2 , and the LED chip 8 can pass through the first conductive pad 31 and the second conductive pad 32 for power supply (or signal transmission). The light-transmitting buffer layer 2 can prevent the alkali metal ions na+, k+, etc. in the glass substrate (such as the transparent substrate 1) from diffusing to other functional layers at high temperature, which affects the performance of the film, and can also be prevented in the flexible substrate. Permeation of water and oxygen (in addition, the light-transmitting buffer layer 2 also prevents direct conduction between the first conductive pad 31 and the second conductive pad 32). A part of the area on the second conductive pad 32 is the first conductive part 321 , the light-transmitting insulating adhesive layer 4 is laid on the light-transmitting buffer layer 2 , and a part of the area on the light-transmitting insulating adhesive layer 4 is a predetermined bonding area, The predetermined bonding area covers the first conductive part 321, the conductive layer 5 is laid and bonded on the light-transmitting insulating adhesive layer 4, and a part of the area on the conductive layer 5 is the second conductive part 51, and the second conductive part 51 covers the predetermined bonding layer. The contact area, that is, the predetermined bonding area is located between the first conductive part 321 and the second conductive part 51, and the predetermined bonding area bonds the first conductive part 321 and the second conductive part 51 together; the laser passes through the transparent After the substrate 1 and the light-transmitting buffer layer 2 are fired, the first conductive portion 321 and the second conductive portion 51 are fused, and the first conductive portion 321 and the second conductive portion 51 are melted and welded together under laser firing (in one embodiment In the process of welding, the predetermined bonding area is melted or vaporized) to form the welding part 6; due to the direct welding between the first conductive part 321 and the second conductive part 51, it is easy to maintain the connection between the conductive layer 5 and the second conductive pad 32 The conductive layer 5 adopts low-resistance metal foil, which greatly reduces the voltage drop of the metal circuit layer, and improves the uniformity of light emission of the LED display panel. In addition, laser welding only heats locally, and it is not easy to cause large-area heating on the conductive layer 5 to cause large-area melting and affect the reliability of conduction.

In one embodiment, the method of removing part of the light-transmitting insulating adhesive layer 4 includes using acetone, NMP (NMP: N-methylpyrrolidone), DMAC (DMAC: dimethylacetamide), DMSO (DMSO: dimethylacetamide) In one embodiment, to remove part of the light-transmitting insulating adhesive layer 4, O2 plasma can be used to remove the adhesive layer material to expose the pad area.

The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the technical principle of the present invention, several improvements and replacements can be made. These improvements and replacements It should also be regarded as the protection scope of the present invention.

Claims (10)

1. An LED display panel wiring structure, comprising:

a transparent substrate;

the light-transmitting buffer layer covers the transparent substrate; the light-transmitting buffer layer is made of an insulating material;

the first conductive bonding pad is arranged on the light-transmitting buffer layer;

the second conductive bonding pad is arranged on the light-transmitting buffer layer; the second conductive pad has a first conductive portion;

the light-transmitting insulating bonding layer is laid on the light-transmitting buffer layer; the light-transmitting insulating adhesive layer has a predetermined adhesive region covering the first conductive portion;

the conducting layer is laid on the light-transmitting insulating bonding layer; the conductive layer has a second conductive portion overlying the predetermined adhesion region; and

and the welding part is formed by sequentially penetrating the transparent substrate and the light-transmitting buffer layer through laser and welding the first conductive part and the second conductive part.

2. The LED display panel wiring structure according to claim 1, wherein the transparent substrate is: any one of glass, transparent PI, PEN and PET.

3. The LED display panel wiring structure of claim 1, wherein the light-transmissive buffer layer is: SiN, SiOx, or AlOx.

4. The LED display panel wiring structure of claim 1, wherein the first conductive pad is: any one of Cu, Ni, Au, ITO, Mo and Ag; the second conductive pad is: any one of Cu, Ni, Au, ITO, Mo and Ag.

5. The LED display panel wiring structure according to claim 1, wherein the light-transmitting insulating adhesive layer is: transparent polymer glue.

6. The LED display panel wiring structure according to claim 1, wherein the conductive layer is: cu foil or Al foil.

7. The LED display panel wiring structure of claim 1, wherein the first conductive portion of the second conductive pad has a plurality of light holes formed therein.

8. The LED display panel wiring structure according to claim 7, wherein the plurality of the light passing holes are formed in a honeycomb shape.

9. The LED display panel wiring structure according to claim 1, wherein the conductive layer has corner portions, the corner portions having a chamfer.

10. A manufacturing method of a wiring structure of an LED display panel is characterized by comprising the following steps:

s1: preparing a transparent substrate;

s2: covering a light-transmitting buffer layer on the transparent substrate; the light-transmitting buffer layer is made of an insulating material;

s3: a first conductive bonding pad and a second conductive bonding pad are respectively arranged on the light-transmitting buffer layer;

s4: a light-transmitting insulating bonding layer is laid on the light-transmitting buffer layer, and a preset bonding area on the light-transmitting insulating bonding layer covers the first conductive part on the second conductive pad;

s5: laying a conducting layer on the light-transmitting insulating bonding layer, wherein a second conducting part on the conducting layer covers the preset bonding area;

s6: and laser sequentially penetrates through the transparent substrate and the light-transmitting buffer layer and is used for welding the first conductive part and the second conductive part.

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