CN114975159A - Wet processing apparatus and wet processing method - Google Patents
Wet processing apparatus and wet processing method Download PDFInfo
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- CN114975159A CN114975159A CN202110198397.XA CN202110198397A CN114975159A CN 114975159 A CN114975159 A CN 114975159A CN 202110198397 A CN202110198397 A CN 202110198397A CN 114975159 A CN114975159 A CN 114975159A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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Abstract
一种湿式处理设备与湿式处理方法。此湿式处理设备包含承载盘、去离子水喷洒装置、多流体喷洒装置、以及干燥气体喷射装置。承载盘配置以承载物件。去离子水喷洒装置设于承载盘的上方,且配置以朝物件喷洒第一去离子水。多流体喷洒装置设于承载盘的上方,且配置以朝物件喷洒混合流体。此混合流体包含第二去离子水、水蒸汽、与挥发性流体。干燥气体喷射装置设于承载盘的上方,且配置以朝物件喷射干燥气体。水蒸汽小分子可提升清洗效果,挥发性流体的挥发可提供残留在物件上的处理液与微粒扩散与移动动能,借此可缩短清洗时间,并可减少湿式处理时去离子水的使用量,达到提升去除效率、降低产品缺陷、与提升良率的效果。
A wet processing equipment and a wet processing method. The wet processing equipment includes a carrier plate, a deionized water spray device, a multi-fluid spray device, and a drying gas spray device. The carrier tray is configured to carry the object. The deionized water spraying device is arranged above the carrier plate and configured to spray the first deionized water toward the object. The multi-fluid spraying device is disposed above the carrier plate and configured to spray the mixed fluid toward the object. The mixed fluid includes a second deionized water, water vapor, and a volatile fluid. The drying gas spraying device is arranged above the carrier plate, and is configured to spray drying gas toward the object. The small molecules of water vapor can improve the cleaning effect. The volatilization of the volatile fluid can provide the diffusion and movement kinetic energy of the treatment liquid and particles remaining on the object, thereby shortening the cleaning time and reducing the amount of deionized water used in wet processing. Achieve the effect of improving removal efficiency, reducing product defects, and improving yield.
Description
技术领域technical field
本揭露是有关于一种湿式处理技术,且特别是有关于一种湿式处理设备与湿式处理方法。The present disclosure relates to a wet processing technology, and more particularly, to a wet processing apparatus and a wet processing method.
背景技术Background technique
以液体对制造物件进行例如清洗与蚀刻等湿式处理已广泛地应用于电子制造产业中。举例而言,利用单晶圆旋转湿式蚀刻设备对晶圆进行蚀刻制程时,会经过单次或多次的酸性或碱性蚀刻液的蚀刻或清洗液的清洗。在湿式处理过程中,不同酸性或碱性处理液的转换之间通常以去离子(DI)水来去除将晶圆上残留的酸性或碱性处理液。此外,在完成所有酸性或碱性处理液的处理步骤后,亦需利用去离子水冲洗残留在晶圆上的酸性或碱性处理液。因此,每片晶圆在整个蚀刻制程所需的去离子水的使用量相当大。而且,在湿式处理期间,大部分的去离子水会因晶圆的高速旋转而迅速的被甩出晶圆,导致去离子水的清洗效果有限。Wet processing of manufactured objects with liquids, such as cleaning and etching, is widely used in the electronics manufacturing industry. For example, when the wafer is etched with a single-wafer spin wet etching equipment, it will undergo one or more times of etching with an acidic or alkaline etchant or cleaning with a cleaning solution. In the wet processing process, deionized (DI) water is usually used between the switching of different acidic or alkaline processing liquids to remove the remaining acidic or alkaline processing liquids on the wafer. In addition, after all the processing steps of the acidic or alkaline processing liquid are completed, the acid or alkaline processing liquid remaining on the wafer needs to be rinsed with deionized water. Therefore, the amount of deionized water required for each wafer in the entire etching process is quite large. Moreover, during wet processing, most of the deionized water will be quickly thrown out of the wafer due to the high-speed rotation of the wafer, resulting in limited cleaning effect of the deionized water.
在水资源有限的情况下,已迫使各大半导体厂积极进行去离子水的使用减量与回收再利用。因此,亟需一种可兼顾湿式处理效果的提升与去离子水的使用量的减少的湿式处理技术。In the case of limited water resources, major semiconductor factories have been forced to actively reduce and recycle deionized water. Therefore, there is an urgent need for a wet treatment technology that can improve the wet treatment effect and reduce the amount of deionized water used.
发明内容SUMMARY OF THE INVENTION
因此,本揭露的一目的就是在提供一种湿式处理设备与湿式处理方法,其可以轮流对物件喷洒去离子水,以及包含去离子水、水蒸汽、与挥发性流体的混合流体的雾状小分子。水蒸汽小分子可减少湿式处理时去离子水的使用量,并可提升清洗效果。此外,挥发性流体的挥发可提供残留在物件上的处理液与微粒扩散与移动动能,而可缩短清洗时间,进一步降低去离子水的使用量,并可提升去除效率,更可避免破坏物件,进而可降低产品缺陷,提升良率。Therefore, an object of the present disclosure is to provide a wet processing apparatus and a wet processing method, which can spray deionized water on an object in turn, and a mist-like mist containing a mixed fluid of deionized water, water vapor, and volatile fluid. molecular. The small molecules of water vapor can reduce the use of deionized water in wet processing and can improve the cleaning effect. In addition, the volatilization of the volatile fluid can provide the diffusion and movement kinetic energy of the processing liquid and particles remaining on the object, which can shorten the cleaning time, further reduce the use of deionized water, improve the removal efficiency, and avoid damage to the object. This can reduce product defects and improve yield.
本揭露的另一目的就是在提供一种湿式处理设备与湿式处理方法,其可以包含干燥氮气与挥发性溶液饱和蒸气的二流体来喷吹物件。挥发性溶液饱和蒸气的挥发可快速带走物件上残留的水分,借此可更快速的旋干物件,而可降低喷吹时间,进而可提升干燥效率,不仅可有效降低干燥氮气的使用量,更可提升产能。此外,物件上的水分被快速带走可降低水印(watermark)缺陷的形成机率,而可减少产品缺陷与提升良率。Another object of the present disclosure is to provide a wet processing apparatus and a wet processing method, which can spray objects with two fluids including dry nitrogen and saturated vapor of a volatile solution. The volatilization of the saturated vapor of the volatile solution can quickly take away the residual moisture on the object, so that the object can be spun faster, and the spraying time can be reduced, which can improve the drying efficiency, not only can effectively reduce the use of drying nitrogen, It can also increase productivity. In addition, the rapid removal of moisture on the object can reduce the probability of watermark defects, thereby reducing product defects and improving yield.
根据本揭露的上述目的,提出一种湿式处理设备。此湿式处理设备包含承载盘、去离子水喷洒装置、多流体喷洒装置、以及干燥气体喷射装置。承载盘配置以承载物件。去离子水喷洒装置设于承载盘的上方,且配置以朝物件喷洒第一去离子水。多流体喷洒装置设于承载盘的上方,且配置以朝物件喷洒混合流体。此混合流体包含第二去离子水、水蒸汽、与挥发性流体。干燥气体喷射装置设于承载盘的上方,且配置以朝物件喷射干燥气体。According to the above object of the present disclosure, a wet processing apparatus is proposed. The wet processing equipment includes a carrier plate, a deionized water spray device, a multi-fluid spray device, and a drying gas spray device. The carrier tray is configured to carry the object. The deionized water spraying device is arranged above the carrier plate and configured to spray the first deionized water toward the object. The multi-fluid spraying device is disposed above the carrier plate and configured to spray the mixed fluid toward the object. The mixed fluid includes a second deionized water, water vapor, and a volatile fluid. The drying gas spraying device is arranged above the carrier plate, and is configured to spray drying gas toward the object.
依据本揭露的一实施例,上述的湿式处理设备更包含多流体产生装置、挥发性流体供应装置、水蒸汽产生器、以及去离子水供应装置。多流体产生装置与多流体喷洒装置流体连通,且配置以产生混合流体与供应此混合流体给多流体喷洒装置。挥发性流体供应装置与多流体产生装置流体连通,且配置以供应挥发性流体给多流体产生装置。水蒸汽产生器与多流体产生装置流体连通,且配置以产生水蒸汽与供应水蒸汽给多流体产生装置。去离子水供应装置与多流体产生装置流体连通,且配置以供应第二去离子水给多流体产生装置。According to an embodiment of the present disclosure, the above-mentioned wet processing equipment further includes a multi-fluid generating device, a volatile fluid supplying device, a water vapor generator, and a deionized water supplying device. The multi-fluid generating device is in fluid communication with the multi-fluid spray device and is configured to generate a mixed fluid and supply the mixed fluid to the multi-fluid spray device. A volatile fluid supply device is in fluid communication with the multi-fluid generation device and is configured to supply volatile fluid to the multi-fluid generation device. A water vapor generator is in fluid communication with the multi-fluid generating device and is configured to generate and supply water vapor to the multi-fluid generating device. A deionized water supply is in fluid communication with the multi-fluid generation device and is configured to supply a second deionized water to the multi-fluid generation device.
依据本揭露的一实施例,上述的挥发性流体为挥发性溶液饱和蒸气。而且,挥发性流体供应装置包含挥发性溶液饱和蒸气产生器以及载气供应装置。挥发性溶液饱和蒸气产生器配置以产生挥发性溶液饱和蒸气。载气供应装置配置以提供氮气来将挥发性溶液饱和蒸气运载至多流体产生装置。According to an embodiment of the present disclosure, the above-mentioned volatile fluid is a saturated vapor of a volatile solution. Also, the volatile fluid supply device includes a volatile solution saturated vapor generator and a carrier gas supply device. The volatile solution saturated vapor generator is configured to generate volatile solution saturated vapor. The carrier gas supply is configured to provide nitrogen to carry the saturated vapor of the volatile solution to the multi-fluid generating device.
依据本揭露的一实施例,上述的载气供应装置更包含温度控制器,配置以控制氮气的温度。上述的去离子水供应装置更包含另一温度控制器,配置以控制第二去离子水的温度。According to an embodiment of the present disclosure, the above-mentioned carrier gas supply device further includes a temperature controller configured to control the temperature of the nitrogen gas. The above-mentioned deionized water supply device further includes another temperature controller configured to control the temperature of the second deionized water.
依据本揭露的一实施例,上述的干燥气体喷射装置为干燥氮气喷射装置。According to an embodiment of the present disclosure, the above-mentioned drying gas spraying device is a drying nitrogen spraying device.
依据本揭露的一实施例,上述的干燥气体喷射装置为干燥氮气二流体喷射装置。而且,湿式处理设备更包含挥发性溶液饱和蒸气产生器以及载气供应装置。挥发性溶液饱和蒸气产生器与干燥气体喷射装置流体连通,且配置以产生挥发性流体中的挥发性溶液饱和蒸气。载气供应装置配置以提供干燥氮气来将挥发性溶液饱和蒸气运载至干燥气体喷射装置。According to an embodiment of the present disclosure, the above-mentioned dry gas injection device is a dry nitrogen two-fluid injection device. Moreover, the wet processing equipment further includes a volatile solution saturated vapor generator and a carrier gas supply device. A volatile solution saturated vapor generator is in fluid communication with the drying gas injection device and is configured to generate volatile solution saturated vapor in the volatile fluid. The carrier gas supply is configured to provide dry nitrogen to carry the saturated vapor of the volatile solution to the dry gas injector.
依据本揭露的一实施例,上述的湿式处理设备更包含干燥氮气喷射装置,设于承载盘的上方,且配置以朝物件喷射另一干燥氮气。According to an embodiment of the present disclosure, the above-mentioned wet processing equipment further includes a dry nitrogen spray device disposed above the carrier plate and configured to spray another dry nitrogen gas toward the object.
依据本揭露的一实施例,上述的载气供应装置更包含温度控制器,配置以控制干燥氮气的温度。According to an embodiment of the present disclosure, the above-mentioned carrier gas supply device further includes a temperature controller configured to control the temperature of the drying nitrogen gas.
依据本揭露的一实施例,上述的湿式处理设备更包含蚀刻液喷洒装置,设于承载盘的上方,且配置以朝物件喷洒蚀刻液。According to an embodiment of the present disclosure, the above-mentioned wet processing equipment further includes an etching solution spraying device disposed above the carrier plate and configured to spray the etching solution toward the object.
依据本揭露的一实施例,上述的湿式处理设备更包含夹持装置、气浮装置、转轴、以及马达。夹持装置设于承载盘上,且配置以夹持固定物件。气浮装置设于承载盘上,且配置以抬升物件使物件与承载盘分隔开。转轴与承载盘连接,且配置以旋转承载盘。马达与转轴连接,且配置以驱动转轴。According to an embodiment of the present disclosure, the above-mentioned wet processing equipment further includes a clamping device, an air flotation device, a rotating shaft, and a motor. The clamping device is arranged on the carrier plate, and is configured to clamp and fix the object. The air flotation device is arranged on the carrying tray, and is configured to lift the object to separate the object from the carrying tray. The rotating shaft is connected with the carrying plate and is configured to rotate the carrying plate. The motor is connected with the rotating shaft and is configured to drive the rotating shaft.
根据本揭露的上述目的,另提出一种湿式处理方法。在此方法中,利用去离子水喷洒装置对物件喷洒第一去离子水。利用多流体喷洒装置对物件喷洒混合流体。此混合流体包含第二去离子水、水蒸汽、与挥发性流体。对物件喷射干燥气体,以吹干物件。According to the above objective of the present disclosure, another wet processing method is proposed. In this method, the object is sprayed with first deionized water using a deionized water spray device. Use a multi-fluid spray device to spray mixed fluids on objects. The mixed fluid includes a second deionized water, water vapor, and a volatile fluid. Spray drying gas on the object to dry the object.
依据本揭露的一实施例,上述对物件喷洒第一去离子水与对此物件喷洒混合流体以交替方式进行。According to an embodiment of the present disclosure, the spraying of the first deionized water on the object and the spraying of the mixed fluid on the object are performed in an alternate manner.
依据本揭露的一实施例,上述的挥发性流体包含挥发性溶液及/或挥发性溶液饱和蒸气。According to an embodiment of the present disclosure, the above-mentioned volatile fluid includes a volatile solution and/or a saturated vapor of the volatile solution.
依据本揭露的一实施例,上述喷洒混合流体更包含利用载气来运载挥发性溶液饱和蒸气。According to an embodiment of the present disclosure, the spraying mixed fluid further includes using a carrier gas to carry the saturated vapor of the volatile solution.
依据本揭露的一实施例,上述利用载气来运载挥发性溶液饱和蒸气包含控制载气的温度。According to an embodiment of the present disclosure, using the carrier gas to carry the saturated vapor of the volatile solution includes controlling the temperature of the carrier gas.
依据本揭露的一实施例,上述喷洒混合流体包含控制第二去离子水的温度。According to an embodiment of the present disclosure, the spraying of the mixed fluid includes controlling the temperature of the second deionized water.
依据本揭露的一实施例,上述对物件喷射干燥气体包含利用干燥氮气喷射装置对物件喷射干燥氮气。According to an embodiment of the present disclosure, the spraying of the drying gas to the object includes spraying dry nitrogen to the object using a drying nitrogen spraying device.
依据本揭露的一实施例,上述对物件喷射干燥气体更包含利用干燥氮气二流体喷射装置对物件喷射另一干燥氮气与挥发性溶液饱和蒸气。以交替方式利用干燥氮气喷射装置与干燥氮气二流体喷射装置。According to an embodiment of the present disclosure, the spraying of the drying gas to the object further comprises spraying another dry nitrogen gas and a saturated vapor of the volatile solution to the object by using a dry nitrogen two-fluid spraying device. Dry nitrogen sparging and dry nitrogen two-fluid sparging were used in an alternating fashion.
依据本揭露的一实施例,上述的方法更包含利用蚀刻液喷洒装置朝物件喷洒蚀刻液。According to an embodiment of the present disclosure, the above-mentioned method further includes spraying the etching solution on the object by using the etching solution spraying device.
依据本揭露的一实施例,上述喷洒蚀刻液、喷洒第一去离子、喷洒混合流体、与喷射干燥气体包含旋转物件。According to an embodiment of the present disclosure, the spraying of the etching solution, the spraying of the first deionization, the spraying of the mixed fluid, and the spraying of the drying gas include rotating objects.
附图说明Description of drawings
为让本揭露的上述和其他目的、特征、优点与实施例能更明显易懂,所附图式的说明如下:In order to make the above and other objects, features, advantages and embodiments of the present disclosure more clearly understood, the accompanying drawings are described as follows:
图1是绘示依照本揭露的一实施方式的一种湿式处理设备的装置示意图。FIG. 1 is an apparatus schematic diagram illustrating a wet processing apparatus according to an embodiment of the present disclosure.
图2是绘示依照本揭露的一实施方式的一种湿式处理设备的多流体供应系统的装置示意图。2 is a schematic diagram illustrating a multi-fluid supply system of a wet processing apparatus according to an embodiment of the present disclosure.
图3是绘示依照本揭露的一实施方式的一种湿式处理设备的干燥氮气二流体供应系统的装置示意图。FIG. 3 is a schematic diagram illustrating an apparatus of a dry nitrogen two-fluid supply system of a wet processing apparatus according to an embodiment of the present disclosure.
图4是绘示依照本揭露的一实施方式的移除残留在物件上的处理液与微粒的示意图。4 is a schematic diagram illustrating the removal of processing liquid and particles remaining on an object according to an embodiment of the present disclosure.
【主要元件符号说明】【Description of main component symbols】
100:湿式处理设备 110:承载盘100: Wet processing equipment 110: Carrier tray
112:承载面 120:去离子水喷洒装置112: Bearing surface 120: Deionized water spray device
130:多流体喷洒装置 140:干燥氮气喷射装置130: Multi-fluid spray device 140: Dry nitrogen spray device
150:干燥氮气二流体喷射装置 160:物件150: Dry nitrogen two-fluid spray device 160: Object
162:表面 164:图案结构162: Surface 164: Pattern Structure
170:夹持装置 180:气浮装置170: Clamping device 180: Air flotation device
190:转轴 200:马达190: shaft 200: motor
210:蚀刻液喷洒装置 300:多流体供应系统210: Etching liquid spray device 300: Multi-fluid supply system
310:多流体产生装置 320:挥发性流体供应装置310: Multi-fluid generation device 320: Volatile fluid supply device
322:挥发性溶液饱和蒸气产生器 324:载气供应装置322: Volatile solution saturated vapor generator 324: Carrier gas supply device
326:温度控制器 330:水蒸汽产生器326: Temperature Controller 330: Steam Generator
340:去离子水供应装置 342:温度控制器340: Deionized water supply device 342: Temperature controller
400:干燥氮气二流体供应系统 410:挥发性溶液饱和蒸气产生器400: dry nitrogen two-fluid supply system 410: volatile solution saturated steam generator
420:载气供应装置 422:温度控制器420: Carrier gas supply 422: Temperature controller
AR:箭头 MF:混合流体AR: Arrow MF: Mixed Fluid
PC:微粒 PF:处理液PC: Particulate PF: Treatment fluid
具体实施方式Detailed ways
本揭露所叙述的二元件之间的空间关系不仅适用于图式所绘示的方位,亦适用于图式所未呈现的方位,例如倒置的方位。此外,本揭露所称二个部件的「连接」或类似用语并非仅限制于此二者为直接的连接,亦可视需求而包含间接的连接。关于本文中所使用的「第一」、「第二」、…等,并非特别指次序或顺位的意思,其仅为了区别以相同技术用语描述的元件或操作。The spatial relationship between the two elements described in the present disclosure is not only applicable to the orientation shown in the drawings, but also applicable to orientations not shown in the drawings, such as an upside-down orientation. In addition, the term "connection" or similar terms of two components referred to in the present disclosure is not limited to direct connection between the two, and indirect connection may also be included as required. "First", "second", .
请参照图1,其是绘示依照本揭露的一实施方式的一种湿式处理设备的装置示意图。湿式处理设备100可应用在电子装置于制作过程中的湿式处理,例如清洗、蚀刻等等。举例而言,湿式处理设备100可为晶圆清洗设备、晶圆蚀刻设备、或晶圆蚀刻与清洗设备。在一些例子中,湿式处理设备100主要包含承载盘110、去离子水喷洒装置120、多流体喷洒装置130、以及干燥气体喷射装置。干燥气体喷射装置可例如为干燥氮气喷射装置140或干燥氮气二流体喷射装置150。在一些例子中,湿式处理设备100可包含干燥氮气喷射装置140、或干燥氮气二流体喷射装置150、或者干燥氮气喷射装置140与干燥氮气二流体喷射装置150。Please refer to FIG. 1 , which is a schematic diagram illustrating a wet processing apparatus according to an embodiment of the present disclosure. The
承载盘110可用以承载待进行湿式处理的物件160,例如晶圆。承载盘110具有承载面112,物件160设置在承载面112之上。在一些例子中,湿式处理设备100可包含夹持装置170。此夹持装置170可设于承载盘110的承载面112上,而可用以将物件160夹持固定在承载面112之上。举例而言,夹持装置170可为夹持梢。湿式处理设备100亦可具有不同固定装置来固定物件160。举例而言,可利用静电吸盘来将物件160固定在承载盘110的承载面112上。The
湿式处理设备100更可选择性地包含气浮装置180。此气浮装置180可设于承载盘110中,且气浮装置180可朝承载面112喷射气体,以抬升物件160,使物件160与承载盘110的承载面112分隔开,而不会直接接触承载面112。The
在一些例子中,湿式处理设备100为可旋转的处理设备。在这样的例子中,湿式处理设备100更可包含转轴190与马达200。转轴190与承载盘110连接,且可旋转承载盘110。马达200与转轴190连接,且可以驱动转轴190转动,进而带动承载盘110旋转。In some examples,
去离子水喷洒装置120设于承载盘110的承载面112的上方,且位于承载盘110所承载的物件160之上。去离子水喷洒装置120可朝此物件160的表面162喷洒第一去离子水,来清洗物件160。The deionized
多流体喷洒装置130同样设于承载盘110的承载面112的上方,且位于物件160之上。多流体喷洒装置130可例如邻近去离子水喷洒装置120。多流体喷洒装置130可朝物件160的表面162喷洒混合流体。此混合流体包含多种流体的混合。在一些例子中,此混合流体包含第二去离子水、水蒸汽、与挥发性流体。挥发性流体可包含挥发性溶液及/或挥发性溶液饱和蒸气。举例而言,挥发性溶液可为异丙醇(IPA)。去离子水喷洒装置120与多流体喷洒装置130可交替运转,以轮流朝物件160的表面162喷洒去离子水与混合流体。The
请先参照图4,其是绘示依照本揭露的一实施方式的移除残留在物件上的处理液与微粒的示意图。在一些例子中,物件160的表面162上设有许多元件的图案结构164。酸性或碱性的处理液PF与微粒PC残留在物件160的表面162上,且可能落在图案结构164之间。多流体喷洒装置130可喷出混合流体雾状小分子。混合流体MF中的水蒸汽的热效果可产生气穴现象。气穴现象是在混合常温纯水与高温水蒸气时,因热交换而产生具有某种程度的频率,例如10KHz至1MHz的振动。这样的振动可提供能量而将水分子分解为氢离子与氢氧离子,不稳定的氢离子与氢氧离子再次回到水分子时所产生的高能量可转换为机械性冲击,借此水分子可迅速与物件160的表面162上残留的酸性或碱性的处理液PF及微粒PC结合。多流体喷洒装置130喷出混合流体雾状小分子,不仅可减少去离子水的使用量,亦可提升清洗效果。Please refer first to FIG. 4 , which is a schematic diagram of removing the processing liquid and particles remaining on the object according to an embodiment of the present disclosure. In some examples, the
此外,多流体喷洒装置130所喷出的混合流体MF中的挥发性流体,例如挥发性溶液及/或挥发性溶液饱和蒸气,的挥发可提供残留的处理液PF与微粒PC额外的扩散与移动动能。图4的箭头AR表示混合流体MF中的挥发性溶液饱和蒸气的移动方向,挥发性溶液饱和蒸气在挥发的过程中提供移动与扩散动能给处理液PF与微粒PC。借此,残留在物件160上的处理液PF与微粒PC可随着混合流体MF而被迅速带走。因此,可进一步降低去离子水的使用量,并可提升残留处理液PF与微粒PC的去除效率。而由于残留的处理液PF与微粒PC的去除效果提升,因此多流体喷洒装置130可不需要使用太大的喷射力即可有效去除残留的处理液PF与微粒PC。故,可降低对物件160的表面162上的图案结构164的冲击,例如可降低对晶圆的元件图案结构的冲击,而可避免物件160受损,进而可降低物件160的缺陷,有效提升产品良率。In addition, the volatilization of the volatile fluid in the mixed fluid MF sprayed by the
请同时参照图1与图2,其中图2是绘示依照本揭露的一实施方式的一种湿式处理设备的多流体供应系统的装置示意图。在一些例子中,湿式处理设备100更可包含多流体供应系统300。多流体供应系统300可与多流体喷洒装置130流体连通,且可提供多种流体的混合流体给多流体喷洒装置130。在一些例子中,多流体供应系统300主要可包含多流体产生装置310、挥发性流体供应装置320、水蒸汽产生器330、以及去离子水供应装置340。Please refer to FIG. 1 and FIG. 2 at the same time, wherein FIG. 2 is a schematic diagram illustrating a multi-fluid supply system of a wet processing apparatus according to an embodiment of the present disclosure. In some examples, the
多流体产生装置310可与多流体喷洒装置130流体连通。多流体产生装置310可产生混合流体,并将所产生的混合流体供应给多流体喷洒装置130。多流体产生装置310可产生第二去离子水、挥发性流体、与水蒸汽的混合流体。The
挥发性流体供应装置320可与多流体产生装置310流体连通,而可供应挥发性流体给多流体产生装置310。在一些示范例子中,挥发性流体供应装置320所供应的挥发性流体为挥发性溶液饱和蒸气。如图2所示,在这样的例子中,挥发性流体供应装置320可例如包含挥发性溶液饱和蒸气产生器322以及载气供应装置324。挥发性溶液饱和蒸气产生器322可与多流体产生装置310流体连通。挥发性溶液饱和蒸气产生器322可产生挥发性溶液饱和蒸气,并将挥发性溶液饱和蒸气供应给多流体产生装置310。The volatile
载气供应装置324则可与挥发性溶液饱和蒸气产生器322流体连通。载气供应装置324可提供载气给挥发性溶液饱和蒸气产生器322,借以利用载气来将挥发性溶液饱和蒸气产生器322所产生的挥发性溶液饱和蒸气载送至多流体产生装置310。载气可例如为氮气。在一些示范例子中,载气供应装置324更可包含温度控制器326。温度控制器326配置以控制供应给挥发性溶液饱和蒸气产生器322的载气,例如氮气的温度。温度控制器326的配置可对载气进行各种温度的设定,而可扩展湿式处理设备100的应用性,例如高温制程的应用。The
在其他例子中,挥发性流体供应装置320所供应的挥发性流体为挥发性溶液。在这样的例子中,挥发性流体供应装置320所提供的挥发性溶液可直接经由管路流到多流体产生装置310中,因而无需载气供应装置324。挥发性流体供应装置320可选择性地配置温度控制器(未绘示),以控制所供应的挥发性溶液的温度。In other examples, the volatile fluid supplied by the volatile
水蒸汽产生器330同样可与多流体产生装置310流体连通。水蒸汽产生器330可产生水蒸汽,并将水蒸气供应给多流体产生装置310。The
去离子水供应装置340可与多流体产生装置310流体连通。借此,去离子水供应装置340可供应第二去离子水给多流体产生装置310。在一些示范例子中,去离子水供应装置340更可包含温度控制器342,以控制供应给多流体产生装置310的第二去离子水的温度,以利扩展湿式处理设备100的应用性。
在一些例子中,请继续参照图1,干燥气体喷射装置,例如干燥氮气喷射装置140及/或干燥氮气二流体喷射装置150,设于承载盘110的上方,且配置以朝承载面112上的物件160的表面162喷射干燥气体,来去除物件160上的残留液体,以干燥物件160。干燥氮气喷射装置140可朝物件160喷射干燥氮气。干燥氮气二流体喷射装置150则可朝物件160的表面162喷射干燥氮气与挥发性溶液饱和蒸气,即此时的干燥气体包含干燥氮气与挥发性溶液饱和蒸气。当湿式处理设备100同时包含干燥氮气喷射装置140与干燥氮气二流体喷射装置150时,干燥氮气喷射装置140与干燥氮气二流体喷射装置150可轮流对物件160的表面162喷射干燥气体。In some examples, please continue to refer to FIG. 1 , the drying gas spraying device, such as the drying
请同时参照图1与图3,其中图3是绘示依照本揭露的一实施方式的一种湿式处理设备的干燥氮气二流体供应系统的装置示意图。在湿式处理设备100至少包含有干燥氮气二流体喷射装置150的例子中,湿式处理设备100更可包含干燥氮气二流体供应系统400。干燥氮气二流体供应系统400可与干燥氮气二流体喷射装置150流体连通,且可提供二种干燥流体给干燥氮气二流体喷射装置150。在一些例子中,干燥氮气二流体供应系统400主要可包含挥发性溶液饱和蒸气产生器410以及载气供应装置420。Please refer to FIG. 1 and FIG. 3 at the same time, wherein FIG. 3 is a schematic diagram illustrating an apparatus of a dry nitrogen two-fluid supply system of a wet processing apparatus according to an embodiment of the present disclosure. In an example in which the
挥发性溶液饱和蒸气产生器410可与干燥氮气二流体喷射装置150流体连通。挥发性溶液饱和蒸气产生器410可产生挥发性溶液饱和蒸气,并将挥发性溶液饱和蒸气供应给干燥氮气二流体喷射装置150。The volatile solution saturated
载气供应装置420可与挥发性溶液饱和蒸气产生器410流体连通。载气供应装置420可提供载气给挥发性溶液饱和蒸气产生器410。借此,可利用载气将挥发性溶液饱和蒸气产生器410所产生的挥发性溶液饱和蒸气载送至干燥氮气二流体喷射装置150。载气可例如为干燥氮气。在一些示范例子中,载气供应装置420更可包含温度控制器422。温度控制器422配置以控制供应给挥发性溶液饱和蒸气产生器410的载气,例如干燥氮气的温度。The
干燥氮气二流体喷射装置150可喷出干燥氮气与挥发性溶液饱和蒸气。挥发性液体饱和蒸汽的挥发可将残留在物件160的表面162上的水分快速带走,因此可降低干燥制程的时间,而可降低干燥氮气的使用量。此外,由于干燥氮气与挥发性液体饱和蒸汽的二流体可更快速地旋干物件160的表面162上的水分,因此可大幅提升干燥效率,而可降低水印缺陷在物件160的表面162上的形成机率,进而可降低产品缺陷与提升良率,并可提高产量。The dry nitrogen two-
在一些例子中,如图1所示,湿式处理设备100可为湿式蚀刻处理设备,而更包含蚀刻液喷洒装置210。蚀刻液喷洒装置210同样设于承载盘110的承载面112的上方,且可朝物件160的表面162喷洒蚀刻液。蚀刻液可例如为酸性溶液或碱性溶液。在一些示范例子中,湿式处理设备100为单晶圆旋转湿式蚀刻设备。In some examples, as shown in FIG. 1 , the
在一些例子中,可利用湿式处理设备100对物件160湿式清洗处理。请参照图1,在这样的例子中,可利用去离子水喷洒装置120对物件160喷洒第一去离子水,且可利用多流体喷洒装置130对此物件160喷洒混合流体。混合流体可包含第二去离子水、水蒸汽、与挥发性流体。挥发性流体可例如包含挥发性溶液及/或挥发性溶液饱和蒸气。可以交替方式,利用去离子水喷洒装置120与多流体喷洒装置130来对物件160轮流喷洒第一去离子水与混合流体。对物件160喷洒第一去离子与混合流体时,可利用马达200来驱动转轴190,以带动承载盘110及其上的物件160旋转。In some examples, the
请一并参照图2,利用多流体喷洒装置130朝物件160的表面162喷洒混合流体时,可利用载气供应装置324提供载气,而以载气运载挥发性溶液饱和蒸气至多流体产生装置310。多流体产生装置310将挥发性溶液饱和蒸气、水蒸汽产生器330所产生的水蒸汽、与去离子水供应装置340供应的第二去离子水混合后,再将混合流体供应给多流体喷洒装置130。此外,更可根据清洗处理需求,利用载气供应装置324的温度控制器326来控制所提供的载气的温度,及/或利用去离子水供应装置340的温度控制器342来控制所提供的第二去离子水的温度,以提供所需温度的混合流体。2 , when the mixed fluid is sprayed on the
接着,可利用干燥气体喷射装置,例如干燥氮气喷射装置140及/或干燥氮气二流体喷射装置150,对物件160喷射干燥气体,以吹干物件160。干燥氮气喷射装置140所喷射的干燥气体为干燥氮气,干燥氮气二流体喷射装置150所喷射的干燥气体为干燥氮气与挥发性溶液饱和蒸气所组成的二流体。在湿式处理设备100同时包含干燥氮气喷射装置140与干燥氮气二流体喷射装置150的例子中,可以交替方式,利用干燥氮气喷射装置140与干燥氮气二流体喷射装置150来对物件160轮流喷射干燥氮气、以及干燥氮气与挥发性溶液饱和蒸气。对物件160喷射干燥气体时,可利用转轴190来带动承载盘110及其上的物件160旋转,而加速物件160的干燥。Next, a drying gas spraying device, such as the drying
请一并参照图3,利用干燥氮气二流体喷射装置150朝物件160的表面162喷射干燥氮气二流体时,可利用挥发性溶液饱和蒸气产生器410产生挥发性溶液饱和蒸气,并利用载气供应装置420提供干燥氮气作为载气,来将挥发性溶液饱和蒸气运送至干燥氮气二流体喷射装置150。同样可根据干燥处理需求,利用载气供应装置420的温度控制器422来控制所提供的载气的温度,以提供所需温度的二流体。Please also refer to FIG. 3 , when the dry nitrogen two-
在湿式处理设备100包含蚀刻液喷洒装置210的例子中,湿式处理设备100为湿式蚀刻处理设备。可利用蚀刻液喷洒装置210朝物件160的表面162喷洒蚀刻液,来蚀刻物件160的表面162。对物件160喷洒蚀刻液时,可利用转轴190来带动承载盘110及其上的物件160旋转。可在每道蚀刻制程后,利用湿式处理设备100对物件160进行清洗处理与后续的干燥处理。In an example in which the
以下利用一示范例子来说明湿式处理设备100对物件160的湿式蚀刻处理、清洗处理、与干燥处理。请再次参照图1,利用传送机构(未绘示)将物件160载送到承载盘110上时,夹持装置170打开,以承接传送机构所放下的物件160,而后夹持装置170关上以夹紧物件160,而将物件160固定在承载盘110的承载面112之上。接下来,可对物件160进行湿式蚀刻制程,以利用马达200带动转轴190转动,而进一步带动承载盘110及固定于其上的物件160旋转。接着,承载盘110可根据蚀刻液回收位置而升降至适当位置,再以蚀刻液喷洒装置210朝物件160的表面162喷洒蚀刻液来进行物件160的蚀刻。此时,蚀刻液因物件160旋转所产生的离心力而被甩出物件160,而落到承载盘110周围的蚀刻液回收装置中。在设定的蚀刻秒数后,停止喷洒蚀刻液,承载盘110再升降至清洗位置,以清除残留在物件160上的蚀刻液与微粒。The following uses an exemplary example to describe the wet etching process, cleaning process, and drying process of the
进行清洗处理时,可以交替方式,利用去离子水喷洒装置120与多流体喷洒装置130来轮流对物件160喷洒去离子水与混合流体。可视制程需求,来分别设定去离子水喷洒装置120与多流体喷洒装置130的喷洒时间。During the cleaning process, the deionized
待清洗处理结束,可根据制程需求,而单独利用干燥氮气喷射装置140或干燥氮气二流体喷射装置150,或利用干燥氮气喷射装置140与干燥氮气二流体喷射装置150来进行干燥处理。可以交替方式,利用干燥氮气喷射装置140与干燥氮气二流体喷射装置150来轮流对物件160喷射干燥氮气、及干燥氮气二流体。同样可视制程需求,来分别设定干燥氮气喷射装置140与干燥氮气二流体喷射装置150的喷射时间。After the cleaning process is completed, the dry
完成干燥处理后,承载盘110升降到传送位置后停止旋转。夹持装置170打开,传送装置将完成湿式处理的物件160取出,再放置下一片待湿式处理的物件160,然后重复上述步骤直至处理完所有物件160。After the drying process is completed, the
由上述的实施方式可知,本揭露的一优点就是因为本揭露可以轮流对物件喷洒去离子水,以及包含去离子水、水蒸汽、与挥发性流体的混合流体的雾状小分子。水蒸汽小分子可减少湿式处理时去离子水的使用量,并可提升清洗效果。此外,挥发性流体的挥发可提供残留在物件上的处理液与微粒扩散与移动动能,而可缩短清洗时间,进一步降低去离子水的使用量,并可提升去除效率,更可避免破坏物件,进而可降低产品缺陷,提升良率。As can be seen from the above-mentioned embodiments, one advantage of the present disclosure is that the present disclosure can spray deionized water and mist-like small molecules including deionized water, water vapor, and a mixed fluid of volatile fluids on objects in turn. The small molecules of water vapor can reduce the use of deionized water in wet processing and can improve the cleaning effect. In addition, the volatilization of the volatile fluid can provide the diffusion and movement kinetic energy of the processing liquid and particles remaining on the object, which can shorten the cleaning time, further reduce the use of deionized water, improve the removal efficiency, and avoid damage to the object. This can reduce product defects and improve yield.
本揭露的另一优点就是因为本揭露可以包含干燥氮气与挥发性溶液饱和蒸气的二流体来喷吹物件。挥发性溶液饱和蒸气的挥发可快速带走物件上残留的水分,借此可更快速的旋干物件,而可降低喷吹时间,进而可提升干燥效率,不仅可有效降低干燥氮气的使用量,更可提升产能。此外,物件上的水分被快速带走可降低水印缺陷的形成机率,而可减少产品缺陷与提升良率。Another advantage of the present disclosure is that the present disclosure can spray objects with two fluids including dry nitrogen and saturated vapor of a volatile solution. The volatilization of the saturated vapor of the volatile solution can quickly take away the residual moisture on the object, so that the object can be spun faster, and the spraying time can be reduced, which can improve the drying efficiency, not only can effectively reduce the use of drying nitrogen, It can also increase productivity. In addition, the moisture on the object is quickly taken away, which can reduce the formation probability of watermark defects, thereby reducing product defects and improving yield.
以上所述,仅是本发明的较佳实施例而已,并非对本发明做任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Technical personnel, within the scope of the technical solution of the present invention, can make some changes or modifications to equivalent examples of equivalent changes by using the technical content disclosed above, but any content that does not depart from the technical solution of the present invention, according to the present invention. Any simple modifications, equivalent changes and modifications made to the above embodiments by the technical essence of the invention still fall within the scope of the technical solutions of the present invention.
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