CN114975077B - SiC epitaxial wafer processing equipment and method thereof - Google Patents
SiC epitaxial wafer processing equipment and method thereof Download PDFInfo
- Publication number
- CN114975077B CN114975077B CN202110889054.8A CN202110889054A CN114975077B CN 114975077 B CN114975077 B CN 114975077B CN 202110889054 A CN202110889054 A CN 202110889054A CN 114975077 B CN114975077 B CN 114975077B
- Authority
- CN
- China
- Prior art keywords
- plate
- epitaxial wafer
- sic epitaxial
- sic
- workbench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application relates to the technical field of SiC epitaxial wafer processing, which is used for solving the problem of error in cutting size caused by unstable position fixation during SiC epitaxial wafer cutting, in particular to SiC epitaxial wafer processing equipment and a method thereof, and comprises a workbench and a cutting tool apron, wherein the cutting tool apron is arranged at the middle position of the upper surface of the workbench, a fixing mechanism is arranged at the middle position of the upper surface of the workbench, the fixing mechanism comprises a connecting plate, and a fixing plate is connected at the middle position of one side of the outer side wall of the connecting plate; according to the SiC epitaxial wafer positioning device, the SiC epitaxial wafers in different shapes can be stably fixed through the positioning movable rods on the workbench, the adjusting plate and the fixing plate, the accuracy of cutting size cannot be affected due to shaking, the SiC powder generated by cutting can be settled and prevented from being diffused by the atomizing nozzle, and the SiC powder is driven to flow into the recovery box to be recycled through settlement of atomizing spray and flow of water flow.
Description
Technical Field
The application relates to the technical field of SiC epitaxial wafer processing, in particular to SiC epitaxial wafer processing equipment and a method thereof.
Background
When the SiC epitaxial wafer is cut, the fixing equipment is used for fixing the position of the SiC epitaxial wafer due to various differences in the shape of the surface of the SiC epitaxial wafer, and the SiC epitaxial wafer is unstable in fixing due to the small contact surface between the surface of the SiC epitaxial wafer and the fixing equipment, so that the SiC epitaxial wafer is easy to shake in the cutting process, and the dimensional accuracy of a cut product is inaccurate;
the patent with the application number of CN2020217410343 specifically relates to an epitaxial wafer cutting device of a detector chip, wherein the position of an epitaxial wafer is fixed through the pressing operation of an epitaxial wafer by a pressing part on a third cross rod connected with a second cross rod through a spring, and the movement range of the epitaxial wafer is limited through four corner frames fixed on a base;
the patent also has the following problems:
when the SiC epitaxial wafer with more abrupt surfaces is cut, the compression part extruded by the spring is easy to shake when the spring is acted by external force, so that the cutting knife can cut the SiC epitaxial wafer in error, the accuracy of a cut SiC product is inaccurate, and the cut product is easy to discard;
the application provides a solution to the technical problem.
Disclosure of Invention
The application aims to solve the problem of cutting dimension errors caused by unstable position fixation during SiC epitaxial wafer cutting, and provides SiC epitaxial wafer processing equipment and a method thereof.
The aim of the application can be achieved by the following technical scheme:
the processing equipment of the SiC epitaxial wafer comprises a workbench and a cutting tool apron, wherein the cutting tool apron is arranged at the middle position of the upper surface of the workbench, and a fixing mechanism is arranged at the middle position of the upper surface of the workbench and below the cutting tool apron;
the fixing mechanism comprises a connecting plate, a fixing plate is connected to the middle position of the front surface of the connecting plate, two sides of the fixing plate are rotatably connected with adjusting plates through rotating seats, the front surface of each adjusting plate is connected with a plurality of uniformly distributed positioning movable rods, and an adjusting telescopic rod is rotatably connected to the middle position of one side of each adjusting plate, which is close to the connecting plate;
the locating movable rod upper end is connected with the rubber sleeve, the fixed plate upper surface corresponds locating movable rod position department is connected with the sealing ring, the fixed plate lower surface corresponds adjacently locating movable rod intermediate position department is connected with the mounting panel, the mounting panel lateral wall is close to locating movable rod one side corresponds locating movable rod position department is connected with the electro-magnet, the fixed plate lower surface is close to locating movable rod below is connected with the backup pad, the backup pad upper surface corresponds locating movable rod lower surface intermediate position department is connected with the gag lever post, the backup pad upper surface corresponds the gag lever post outside is connected with the second spring.
As a preferred embodiment of the application, the two sides of the outer side wall of the cutter seat are provided with dustproof mechanisms;
the dustproof mechanism comprises a connecting frame, slots are formed in the positions, corresponding to the positions of the connecting frame, of the outer side walls of the cutter holder, fixed scraping plates are connected to the inner side walls of the slots in a sliding mode, three movable rods are connected to the positions, close to the positions of the connecting frame, of the outer side walls of the movable rods, first springs are connected to the inner sides of the connecting frame, and atomizing nozzles are connected to the positions, close to the positions of the connecting frame, of the outer side walls of the cutter holder through extension plates.
As a preferred embodiment of the application, a recovery mechanism is arranged behind the upper surface of the workbench through a pipeline;
the recycling mechanism comprises a recycling box, a driving motor is connected to the middle position of the upper surface of the recycling box, a stirring blade is connected to the lower end of the output end of the driving motor through a rotating shaft, a filter plate is connected to the inner side wall of the recycling box, which is close to the lower part of the stirring blade, a filter cloth is connected to the upper surface of the filter plate, pushing telescopic rods are connected to the two sides of the rear side of the inner side wall of the recycling box, which correspond to the positions of the filter plate, and a movable scraper is connected to the front end of each pushing telescopic rod;
four corner positions of the upper surface inside the recovery tank are connected with lifting telescopic rods, the lower ends of the lifting telescopic rods are connected with scraping frames, the position, away from the driving motor, of the upper surface inside the recovery tank is connected with a supporting rod, and the lower side of the outer side wall of the recovery tank is connected with a liquid level meter.
As a preferred implementation mode of the application, two sides of the upper surface of the workbench, which correspond to the lower surface of the connecting plate, are connected with position adjusting rods, the length of the adjusting plates is smaller than that of the fixing plates, the width of the adjusting plates is the same as that of the fixing plates, and two ends of each adjusting telescopic rod are connected with rotating seats and are respectively connected with the connecting plate and the adjusting plates.
As a preferred implementation mode of the application, a sliding groove is formed at the lower end of the positioning movable rod corresponding to the position of the limiting rod, the upper end of the limiting rod is inserted into the sliding groove, one end of the limiting rod inserted into the sliding groove is connected with a limiting plate, and the width of the limiting plate is larger than the width of the opening at the lower end of the sliding groove.
As a preferred embodiment of the application, a guide groove is arranged at the middle position of the upper surface of the workbench, the length and the width of the guide groove are both larger than those of a plurality of uniformly distributed positioning movable rod forming areas on the workbench, and the guide groove is designed as an inclined angle.
As a preferred embodiment of the application, one end of the fixed scraper, which is close to the cutting blade at the inner side of the cutter holder, is designed to be inclined, the slots are obliquely distributed on the outer side wall of the cutter holder, and the atomizing nozzles and the cutting blade at the inner side of the cutter holder are obliquely distributed.
As a preferable implementation mode of the application, the lifting telescopic rod and the outer side wall of the pushing telescopic rod are respectively sleeved with a telescopic hose, and the length of the movable scraping plate is equal to that of the filter plate.
In a preferred embodiment of the present application, the scraping frame is rectangular, the outer side of the frame structure has the same length as the inner space of the recovery tank, the outer side of the frame structure has the same width as the inner space of the recovery tank, and the lower end of the scraping frame is designed with an inclined angle.
The application method of the processing equipment of the SiC epitaxial wafer comprises the following steps:
step one: placing the SiC epitaxial wafer to be processed at the middle position of the upper surface of the workbench, enabling the SiC epitaxial wafer to press a plurality of uniformly distributed positioning movable rods on the workbench to move downwards under the action of pressing by a worker, enabling the positioning movable rods to move under the limit of a limiting rod on a supporting plate in the moving process, enabling a second spring sleeved outside the limiting rod to cause extrusion shrinkage, stopping pressing when the SiC epitaxial wafer does not act on other positioning movable rods around the SiC epitaxial wafer, and controlling an electromagnet connected to a mounting plate to adsorb and fix the positioning movable rods at corresponding positions through external control equipment;
step two: the height of the placing position of the SiC epitaxial wafer after pressing is adjusted through a position adjusting rod, so that the adjusting plate on the connecting plate, the lower surface of the fixing plate and the upper end of the positioning movable rod on the workbench are kept horizontal, the telescopic length of the telescopic rod is adjusted according to the size of the SiC epitaxial wafer, the adjusting plate rotates around the rotating seat as a center through the support of the rotating seat connected with the fixing plate, the SiC epitaxial wafer can be clamped and fixed at the position of the SiC epitaxial wafer through the tight fitting of one end of the positioning movable rod on the adjusting plate and the fixing plate and the SiC epitaxial wafer, and then the SiC epitaxial wafer is cut;
step three: in the cutting process, an atomizing nozzle connected with external water supply equipment through a pipeline can spray the cutting position of a cutting blade under the support of an inclined extension plate, a fixed scraping plate connected to the inner side of a slot is limited by three movable rods inserted on a connecting frame and does not deviate in position, and is tightly attached to the cutting blade at any time under the action of the resilience force of a first spring on the outer side wall of the movable rod, so that SiC powder adhered to the blade in the cutting process can be scraped and slide along the lower side of the inclined surface of the fixed scraping plate;
step four: after cutting, a worker needs to carry out water leaching impurity removal operation on the SiC epitaxial wafer, so that SiC powder remained on the surface of the SiC epitaxial wafer is removed, and the removed SiC powder and SiC powder sliding downwards along the inclined surface of the fixed scraping plate freely fall into a guide chute on the surface of the workbench and flow along the inclined surface of the guide chute towards the position of a recovery box behind the workbench under the drive of water flow;
step five: the rivers and the SiC powder that flow into the collection box inside receive the filtration of filter plate and filter cloth, make the SiC powder remain at the filter cloth upper surface, in the filtration, drive stirring leaf with external power supply electric connection's driving motor rotates and stirs mixed rivers, movable scraper blade is under the effect of promotion telescopic link, drive filter cloth upper surface through promoting the telescopic link and carry out back-and-forth movement, the liquid level meter detects the inside liquid level data of collection box under the support of bracing piece and is less than the setting value, through the rotation of control equipment stop stirring leaf, make the SiC powder free precipitation in the rivers, the liquid level meter detects the inside liquid level of collection box and reaches the minimum of settlement, promote through control equipment control lift telescopic link and scrape the material frame and hug closely the collection box inner wall and move downwards, clear up the SiC powder that adheres to on the collection box inner wall.
Compared with the prior art, the application has the beneficial effects that:
when the position of the SiC epitaxial wafer to be cut is fixed, the SiC epitaxial wafer is adaptively clamped through a plurality of uniformly distributed positioning movable rods on a workbench, an adjusting plate and a fixing plate under the limitation of a limiting rod and the support of a second spring along with abrupt height change of the surface of the SiC epitaxial wafer, and the SiC epitaxial wafer is clamped by the plurality of positioning movable rods from four directions respectively, so that the SiC epitaxial wafer is not easy to shake in position in the cutting process, and the cutting precision is not adversely affected;
in the cutting process, the atomizing nozzle can spray the cutting position of the cutting blade under the support of the inclined extension plate, so that SiC powder generated by cutting is not easy to spread everywhere, pollution to peripheral equipment is prevented, normal respiration of workers and collection and recycling of the SiC powder are influenced, the SiC powder adhered to the blade can be scraped under the action of a fixed scraping plate tightly attached to the cutting blade due to the fact that the cutting blade is wet, and the cutting blade can be cooled under the action of atomizing spraying;
after the water drenching operation, the water flow and the SiC powder flowing into the recovery tank are filtered by the filter plate and the filter cloth, the SiC powder is enabled to remain on the upper surface of the filter cloth, the driving motor drives the stirring blade to rotate to stir the mixed water flow, the filter cloth is prevented from being blocked by excessive SiC powder precipitation, the movable scraping plate moves back and forth on the upper surface of the filter cloth in a reciprocating manner under the pushing of the pushing telescopic rod, the precipitated SiC powder is pushed to move to one side and is accumulated in one place in a concentrated manner, the influence on the water flow of the filter cloth is prevented, when the liquid level in the recovery tank is detected by the liquid level meter, the lifting telescopic rod is controlled by the control equipment to push the scraping frame to be tightly attached to the inner wall of the recovery tank to move downwards, and the SiC powder attached to the inner wall of the recovery tank is cleaned.
Drawings
The present application is further described below with reference to the accompanying drawings for the convenience of understanding by those skilled in the art.
Fig. 1 is a main structural view of the present application.
Fig. 2 is a structural view of the connection plate of the present application.
Fig. 3 is a structural view of a fixing plate of the present application.
Fig. 4 is a structural view of a dust-proof mechanism of the present application.
Fig. 5 is a structural view of the recovery mechanism of the present application.
In the figure: 1. a work table; 2. a dust-proof mechanism; 21. a connection frame; 22. a movable rod; 23. a fixed scraper; 24. a slot; 25. an atomizing nozzle; 26. a first spring; 3. a cutter holder; 4. a recovery mechanism; 41. a driving motor; 42. a recovery box; 43. a support rod; 44. lifting the telescopic rod; 45. a liquid level gauge; 46. a filter plate; 47. stirring the leaves; 48. a filter cloth; 49. a movable scraper; 410. pushing the telescopic rod; 411. a scraping frame; 5. a fixing mechanism; 51. a connecting plate; 52. adjusting the telescopic rod; 53. an adjusting plate; 54. positioning the movable rod; 55. a fixing plate; 56. a rotating seat; 57. a rubber sleeve; 58. a seal ring; 59. a mounting plate; 510. a limit rod; 511. a second spring; 512. an electromagnet; 513. and a support plate.
Description of the embodiments
The technical solutions of the present application will be clearly and completely described in connection with the embodiments, and it is obvious that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Example 1:
referring to fig. 1-3, the SiC epitaxial wafer processing device includes a workbench 1 and a cutter holder 3, the cutter holder 3 is disposed at the middle position of the upper surface of the workbench 1, a fixing mechanism 5 is disposed at the middle position of the upper surface of the workbench 1, the fixing mechanism 5 includes a connecting plate 51, two sides of a fixing plate 55 connected at the middle position of one side of the outer side wall of the connecting plate 51 are rotatably connected with an adjusting plate 53 through a rotating seat 56, the adjusting plate 53 is connected with the connecting plate 51 through an adjusting expansion rod 52, the rotating seat 56 connected with two ends of the adjusting expansion rod 52 can adjust the angle change between the connecting plate 51 and the adjusting plate 53 in the adjusting process, a rubber sleeve 57 connected with the upper end of a positioning movable rod 54 can increase the friction force between the positioning movable rod 54 and the SiC epitaxial wafer, so that the SiC epitaxial wafer is not easy to slide after being placed, a sealing ring 58 connected with the upper surface of the fixing plate 55 corresponding to the position of the positioning movable rod 54 can prevent water flow and powder from flowing into the lower part from the gap, causing dirt and affecting the normal operation of the lower device;
the lower surface of the fixed plate 55 corresponds to the outer side wall of the mounting plate 59 connected with the middle position of the adjacent positioning movable rod 54, an electromagnet 512 is connected with one side of the positioning movable rod 54, which corresponds to the position of the positioning movable rod 54, and the electromagnet 512 can adsorb the positioning movable rod 54 after being electrified, so that the exposed length of the positioning movable rod 54 is fixed, the difference surface formed by the positioning movable rods 54 with difference in exposed length is tightly attached to the surface of the SiC epitaxial wafer, and the position limitation of the SiC epitaxial wafer is more stable;
the middle position on the workbench 1, the middle position on the two adjusting plates 53 and the middle position on the fixed plate 55 have the same structure, and the middle position on the two adjusting plates 53 and the middle position on the fixed plate 55 are not provided with a positioning movable rod 54 corresponding to the position of the rotating seat 56;
the SiC epitaxial wafer to be processed is placed at the middle position of the upper surface of the workbench 1, the SiC epitaxial wafer is pressed by a worker to move downwards through a plurality of uniformly distributed positioning movable rods 54 on the workbench 1, in the moving process, the positioning movable rods 54 move under the limit of a limiting rod 510 on a supporting plate 513, the second springs 511 sleeved outside the limiting rods 510 are extruded and contracted, the pressing is stopped when the SiC epitaxial wafer is moved to the condition that the SiC epitaxial wafer does not act on other positioning movable rods 54 on the periphery, the electromagnet 512 connected to a mounting plate 59 is controlled by an external control device to adsorb and fix the positioning movable rods 54 at the corresponding position, the height of the position of the SiC epitaxial wafer after being pressed is adjusted through a position adjusting rod, the upper ends of the positioning movable rods 54 on the connecting plate 51 and the lower surface of a fixed plate 55 are kept horizontal, the telescopic length of the adjusting plate 53 is adjusted according to the size of the SiC epitaxial wafer, the supporting seat 56 connected with the fixed plate 55 is used for surrounding the rotating seat 56, the SiC epitaxial wafer is tightly clamped by the rotating seat 56, and the SiC epitaxial wafer is tightly clamped with the SiC epitaxial wafer 55.
Example 2:
the powdered SiC particles generated in the cutting process of the SiC epitaxial wafer are smaller and are easy to scatter around under the drive of a cutting knife rotating at a high speed, so that the powdered SiC particles are scattered in the air around processing equipment to cause dirt of peripheral equipment, and workers easily inhale more SiC powder in the working process to cause adverse effects on the health of the workers and influence the recovery and the utilization of the SiC powder;
referring to fig. 1 and 4, dust-proof mechanisms 2 are disposed on two sides of an outer side wall of a cutter holder 3, the dust-proof mechanisms 2 include a connection frame 21, one end of a fixed scraper 23 slidably connected in a slot 24 formed on two sides of the outer side wall of the cutter holder 3 and corresponding to the connection frame 21 is closely attached to the cutter under the action of a first spring 26, siC powder adhered to the surface of the cutter due to atomized water vapor sprayed from an atomizing nozzle 25 is scraped, and three movable rods 22 connected to the outer side wall of the fixed scraper 23 near the connection frame 21 can limit the movable range of the fixed scraper 23;
in the cutting process, the atomizing nozzle 25 connected with external water supply equipment through a pipeline can carry out spraying operation at the cutting position of the cutting blade under the support of the inclined extension plate, so that SiC powder generated by cutting is settled and is not easy to diffuse into air, siC powder adhered to the surface of the cutting blade due to wetting of the cutting blade is scraped through the fixed scraping plate 23, the fixed scraping plate 23 is limited by the three movable rods 22 inserted on the connecting frame 21 and is not easy to deviate in position, the inclined surface is closely attached to the cutting blade at any time under the resilience force of the first spring 26 on the outer side wall of the movable rod 22, the inclined surface of the fixed scraping plate 23 slides at the lower side after scraping, and the wet SiC powder thrown by the cutting blade rotating at high speed is collected by the collecting equipment at the rear.
Example 3:
after being wetted by atomized water mist sprayed by the atomizing nozzle 25, the SiC powder generated by cutting is not easy to diffuse into the air, but the wetted SiC powder scattered on the workbench 1 influences the attractiveness of the workbench 1, and influences the normal movement of the positioning movable rod 54, so that the position fixing of the SiC epitaxial wafer is influenced;
referring to fig. 1 and 5, a recovery mechanism 4 is disposed behind the upper surface of the workbench 1 through a pipeline, the recovery mechanism 4 includes a recovery box 42, a driving motor 41 connected to the middle position of the upper surface of the recovery box 42 drives a stirring blade 47 to rotate through a rotating shaft, a filter plate 46 can support a filter cloth 48 connected to the upper surface, a movable scraper 49 can conveniently clean SiC powder on the filter cloth 48 under the action of a pushing telescopic rod 410, the SiC powder is prevented from blocking the filter cloth 48 to affect the discharge of water flow in the recovery box 42, and lifting telescopic rods 44 connected to four corner positions of the upper surface in the recovery box 42 can push a scraping frame 411 to clean the SiC powder remained on the inner wall of the recovery box 42, so that the SiC powder is intensively recovered;
after cutting, workers need to carry out water leaching impurity removal operation on the SiC epitaxial wafer, siC powder remained on the surface of the SiC epitaxial wafer is removed, the removed SiC powder and SiC powder sliding down along the inclined surface of the fixed scraping plate 23 fall into the guide groove on the surface of the workbench 1 freely, and flow along the position of the recycling bin 42 behind the workbench along the inclined surface of the guide groove under the drive of water flow, the water flow and the SiC powder flowing into the recycling bin 42 are filtered by the filter plate 46 and the filter cloth 48, the SiC powder remains on the upper surface of the filter cloth 48, in the filtering process, a driving motor 41 electrically connected with an external power supply drives a stirring blade 47 to rotate to stir the mixed water flow, a movable scraping plate 49 drives the upper surface of the filter cloth 48 to reciprocate back and forth under the action of pushing the telescopic rod 410, when the liquid level data inside the recycling bin 42 is detected to be smaller than a set value under the support of the supporting rod 43, the control device stops rotation of the stirring blade 47, the SiC powder in the water flow freely precipitates, and when the liquid level meter 45 detects the liquid level 411 inside the recycling bin 42, the liquid level meter reaches a set minimum value, the control device is used for controlling the lifting device to drive the stirring blade 47 to rotate to stir the mixed water flow, and the mixed water flow on the upper surface of the filter cloth 48, and the SiC powder is adhered to the inner wall of the recycling bin 42 by the telescopic scraping frame.
When the application is used, the pressure action of the SiC epitaxial wafer on the plurality of uniformly distributed positioning movable rods 54 is utilized to enable the positioning movable rods 54 which are tightly attached to the surface of the SiC epitaxial wafer to generate different displacement sizes due to the shape of the surface of the SiC epitaxial wafer, the SiC epitaxial wafer stops pressing when the SiC epitaxial wafer does not act on other positioning movable rods 54 around the periphery, the electromagnet 512 connected to the mounting plate 59 is controlled by external control equipment to adsorb and fix the positioning movable rods 54 at corresponding positions, the height of the connecting plate 51 is regulated by the position regulating rod, the telescopic length of the telescopic rod 52 is regulated according to the size of the SiC epitaxial wafer, the regulating plate 53 rotates around the rotating seat 56 as a center through the support of the rotating seat 56 connected with the fixing plate 55, the SiC epitaxial wafer can be tightly attached to one end of the positioning movable rod 54 on the adjusting plate 53 and the fixing plate 55 to clamp and fix the position of the SiC epitaxial wafer, so that the SiC epitaxial wafer is convenient to cut, siC powder generated in the cutting process can be settled under the action of the atomizing nozzle 25, the SiC powder adhered to the surface of the cutting blade is scraped by the fixing scraper 23 due to wetting of the cutting blade, after the cutting is finished, workers need to carry out water leaching impurity removing operation on the SiC epitaxial wafer, the SiC powder remained on the surface of the SiC epitaxial wafer is removed, the removed SiC powder and the SiC powder sliding down along the inclined surface of the fixing scraper 23 fall into the guide groove on the surface of the workbench 1 freely, and flow into the recovery box 42 along the inclined surface of the guide groove to be filtered by the filter plate 46 and the filter cloth 48 under the driving of the driving motor 41 electrically connected with the external power supply in the filtering process to drive the stirring blade 47 to rotate to stir mixed water flow, the movable scraping plate 49 scrapes the SiC powder on the filter cloth 48 under the action of the pushing telescopic rod 410 to prevent blockage, and the lifting telescopic rod 44 pushes the scraping frame 411 to be clung to the inner wall of the recovery box 42 to move downwards so as to clean the SiC powder attached to the inner wall of the recovery box 42.
The preferred embodiments of the application disclosed above are intended only to assist in the explanation of the application. The preferred embodiments are not intended to be exhaustive or to limit the application to the precise form disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, to thereby enable others skilled in the art to best understand and utilize the application. The application is limited only by the claims and the full scope and equivalents thereof.
Claims (7)
- The processing equipment of the SiC epitaxial wafer comprises a workbench (1) and a cutter holder (3), wherein the cutter holder (3) is arranged at the middle position of the upper surface of the workbench (1), and the processing equipment is characterized in that a fixing mechanism (5) is arranged at the middle position of the upper surface of the workbench (1) and below the cutter holder (3);the fixing mechanism (5) comprises a connecting plate (51) vertically placed facing the SiC epitaxial wafer, a fixing plate (55) is connected to the middle position of the surface of one side of the connecting plate (51) facing the SiC epitaxial wafer, two sides of the fixing plate (55) are rotatably connected with adjusting plates (53) through rotating seats (56), a plurality of uniformly distributed positioning movable rods (54) are connected to the surfaces of the fixing plate (55) and the adjusting plates (53) facing the SiC epitaxial wafer, and an adjusting telescopic rod (52) is rotatably connected to the middle position of one side of the adjusting plates (53) close to the connecting plate (51);the positioning movable rod (54) is connected with a rubber sleeve (57) at one end facing the SiC epitaxial wafer, the surface of the fixing plate (55) and the surface of the adjusting plate (53) facing the SiC epitaxial wafer are correspondingly connected with a sealing ring (58) at the position of the positioning movable rod (54), the surface of the fixing plate (55) and the surface of the adjusting plate (53) facing away from the SiC epitaxial wafer are correspondingly adjacent, a mounting plate (59) is connected at the middle position of the positioning movable rod (54), the outer side wall of the mounting plate (59) is close to the position of the positioning movable rod (54), corresponding to the position of the positioning movable rod (54), an electromagnet (512) can absorb the positioning movable rod (54) after being electrified, the exposed length of the positioning movable rod (54) is fixed, one side of the fixing plate (55) and the adjusting plate (53) facing away from the SiC epitaxial wafer is connected with a supporting plate (513), one side of the supporting plate (513) facing the positioning movable rod (54) is correspondingly connected with a middle position of the positioning movable rod (54), and the other side of the supporting plate (513) faces towards the second side of the positioning movable rod (54), corresponding to the spring (510);the fixing mechanism (5) further comprises a part positioned on the upper surface of the workbench (1), and the fixing mechanism is provided with the same structure as the fixing plate (55) and the adjusting plate (53) and is used for supporting the bottom surface of the SiC epitaxial wafer, and the fixing plate (55) and the adjusting plate (53) are used for clamping and fixing the SiC epitaxial wafer;the two sides of the upper surface of the workbench (1) corresponding to the lower surface of the connecting plate (51) are connected with position adjusting rods, the length of the adjusting plate (53) is smaller than that of the fixing plate (55), the width of the adjusting plate (53) is the same as that of the fixing plate (55), and two ends of the adjusting telescopic rod (52) are connected with rotating seats (56) and are respectively connected with the connecting plate (51) and the adjusting plate (53);a sliding groove is formed in the position, opposite to the SiC epitaxial wafer, of one end of the positioning movable rod (54) corresponding to the limiting rod (510), the upper end of the limiting rod (510) is inserted into the sliding groove, one end, inserted into the sliding groove, of the limiting rod (510) is connected with a limiting plate, and the width of the limiting plate is larger than that of an opening at the lower end of the sliding groove;the guide chute is arranged at the middle position of the upper surface of the workbench (1), the length and the width of the guide chute are both larger than those of a forming area of a plurality of uniformly distributed positioning movable rods (54) on the workbench (1), and the guide chute is of an inclined angle design.
- 2. The processing equipment of the SiC epitaxial wafer according to claim 1, wherein dust-proof mechanisms (2) are arranged on two sides of the outer side wall of the cutter holder (3);dustproof mechanism (2) are including connecting frame (21), cutting blade holder (3) lateral wall both sides correspond connecting frame (21) position department has seted up slot (24), slot (24) inside wall sliding connection has fixed scraper blade (23), fixed scraper blade (23) lateral wall is close to connecting frame (21) position department is connected with three movable rod (22), movable rod (22) lateral wall is close to connecting frame (21) inboard is connected with first spring (26), cutting blade holder (3) lateral wall both sides are close to connecting frame (21) position department is connected with atomizing nozzle (25) through the extension board.
- 3. The SiC epitaxial wafer processing apparatus according to claim 1, wherein a recovery mechanism (4) is provided through a pipe behind the upper surface of the table (1);the recycling mechanism (4) comprises a recycling bin (42), a driving motor (41) is connected to the middle position of the upper surface of the recycling bin (42), a stirring blade (47) is connected to the lower end of the output end of the driving motor (41) through a rotating shaft, a filter plate (46) is connected to the inner side wall of the recycling bin (42) close to the lower portion of the stirring blade (47), a filter cloth (48) is connected to the upper surface of the filter plate (46), a pushing telescopic rod (410) is connected to the two sides of the rear of the inner side wall of the recycling bin (42) corresponding to the position of the filter plate (46), and a movable scraper (49) is connected to the front end of the pushing telescopic rod (410);four corner positions of the upper surface inside the recovery box (42) are connected with lifting telescopic rods (44), the lower ends of the lifting telescopic rods (44) are connected with scraping frames (411), the position, away from the driving motor (41), of the upper surface inside the recovery box (42) is connected with supporting rods (43), and a liquid level meter (45) is connected below the outer side wall of the recovery box (42).
- 4. The SiC epitaxial wafer processing apparatus according to claim 2, wherein one end of the fixed scraper (23) close to the inner side cutting blade of the cutter holder (3) is designed with an inclined angle, the slots (24) are obliquely distributed on the outer side wall of the cutter holder (3), and the atomizing nozzles (25) and the inner side cutting blade of the cutter holder (3) are obliquely distributed.
- 5. A processing apparatus for SiC epitaxial wafers according to claim 3, characterized in that the lifting telescopic rod (44) and the pushing telescopic rod (410) are respectively provided with telescopic hoses, and the length of the movable scraper (49) is equal to the length of the filter plate (46).
- 6. A processing apparatus for SiC epitaxial wafers according to claim 3, characterized in that the shape of the scraping frame (411) is a rectangular frame shape, the outer side length of the frame-like structure is the same as the length of the inner space of the recovery tank (42), the outer side width of the frame-like structure is the same as the width of the inner space of the recovery tank (42), and the lower end of the scraping frame (411) is of an inclined angle design.
- 7. A method of using the SiC epitaxial wafer processing apparatus of claim 1, comprising the steps of:step one: placing the SiC epitaxial wafer to be processed at the middle position of the upper surface of the workbench (1), enabling the SiC epitaxial wafer to press a plurality of uniformly distributed positioning movable rods (54) on the workbench (1) to move downwards under the action of pressing by a worker, enabling the positioning movable rods (54) to move under the limit of a limiting rod (510) on a supporting plate (513) in the moving process, enabling a second spring (511) sleeved outside the limiting rod (510) to cause extrusion shrinkage, stopping pressing when the SiC epitaxial wafer does not act on other positioning movable rods (54) around, and controlling an electromagnet (512) connected to a mounting plate (59) to adsorb and fix the positioning movable rods (54) at the corresponding positions through external control equipment;step two: the height of the placing position of the SiC epitaxial wafer is adjusted through a position adjusting rod after pressing, the height of the connecting plate (51) is adjusted, the lower surfaces of an adjusting plate (53) and a fixing plate (55) on the connecting plate (51) and the upper end of a positioning movable rod (54) on a workbench (1) are kept horizontal, the telescopic length of the telescopic rod (52) is adjusted according to the size of the SiC epitaxial wafer, the adjusting plate (53) rotates around the rotating seat (56) serving as the center through the support of a rotating seat (56) connected with the fixing plate (55), one end of the positioning movable rod (54) on the adjusting plate (53) and the SiC epitaxial wafer are tightly attached to each other for clamping and fixing the position of the SiC epitaxial wafer, and then the SiC epitaxial wafer is cut;step three: in the cutting process, an atomizing nozzle (25) connected with external water supply equipment through a pipeline can spray the cutting position of a cutting blade under the support of an inclined extension plate, a fixed scraping plate (23) connected to the inner side of a slot (24) is limited by three movable rods (22) inserted on a connecting frame (21) and does not deviate in position, and is tightly attached to the cutting blade at any time under the action of the resilience force of a first spring (26) on the outer side wall of the movable rods (22), so that SiC powder adhered to the blade in the cutting process can be scraped and slide along the lower side of the inclined surface of the fixed scraping plate (23);step four: after cutting, workers need to carry out water leaching impurity removal operation on the SiC epitaxial wafer, so that SiC powder remained on the surface of the SiC epitaxial wafer is removed, the removed SiC powder and SiC powder sliding downwards along the inclined surface of the fixed scraper (23) both freely fall into a guide groove on the surface of the workbench (1), and flow along the inclined surface of the guide groove towards the position of a recovery box (42) behind the workbench under the drive of water flow;step five: the water flow and SiC powder flowing into the recycling bin (42) are filtered by the filter plate (46) and the filter cloth (48), siC powder is remained on the upper surface of the filter cloth (48), in the filtering process, a driving motor (41) electrically connected with an external power supply drives a stirring blade (47) to rotate so as to stir mixed water flow, a movable scraping plate (49) drives the upper surface of the filter cloth (48) to reciprocate back and forth under the action of pushing a telescopic rod (410), a liquid level meter (45) detects that liquid level data in the recycling bin (42) is smaller than a set value under the support of a supporting rod (43), the stirring blade (47) is stopped to enable the SiC powder in the water flow to be precipitated freely through a control device, and when the liquid level meter (45) detects that the liquid level in the recycling bin (42) reaches the set minimum value, the control device controls the lifting telescopic rod (44) to push a scraping frame (411) to be tightly adhered to the inner wall of the recycling bin (42) to move downwards so as to clean the SiC powder adhered to the inner wall of the recycling bin (42).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110889054.8A CN114975077B (en) | 2021-08-04 | 2021-08-04 | SiC epitaxial wafer processing equipment and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110889054.8A CN114975077B (en) | 2021-08-04 | 2021-08-04 | SiC epitaxial wafer processing equipment and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114975077A CN114975077A (en) | 2022-08-30 |
| CN114975077B true CN114975077B (en) | 2023-09-19 |
Family
ID=82973264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110889054.8A Active CN114975077B (en) | 2021-08-04 | 2021-08-04 | SiC epitaxial wafer processing equipment and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114975077B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050112860A (en) * | 2004-05-28 | 2005-12-01 | 동부아남반도체 주식회사 | Strip method for resist of the semiconductor device |
| CN1855416A (en) * | 2005-04-26 | 2006-11-01 | 大日本网目版制造株式会社 | Substrate processing device |
| CN108058276A (en) * | 2018-01-17 | 2018-05-22 | 江苏金旸太阳能电力科技股份有限公司 | A kind of polysilicon cutting machine with fixing-stable |
| CN108701592A (en) * | 2016-03-22 | 2018-10-23 | Ev 集团 E·索尔纳有限责任公司 | Apparatus and method for bonding of substrates |
| CN111775358A (en) * | 2020-08-25 | 2020-10-16 | 张诗颖 | Diamond wire cutting machine for silicon crystal bar slicing |
| KR102192926B1 (en) * | 2020-05-08 | 2020-12-21 | 주식회사 지에스피컴퍼니 | Film cutting equipment |
| CN112185884A (en) * | 2020-09-29 | 2021-01-05 | 中国船舶重工集团公司第七二四研究所 | Position multi-dimensional high-adaptation bonding tool and use method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6818351B2 (en) * | 2017-04-14 | 2021-01-20 | サムコ株式会社 | Wafer processing equipment |
-
2021
- 2021-08-04 CN CN202110889054.8A patent/CN114975077B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050112860A (en) * | 2004-05-28 | 2005-12-01 | 동부아남반도체 주식회사 | Strip method for resist of the semiconductor device |
| CN1855416A (en) * | 2005-04-26 | 2006-11-01 | 大日本网目版制造株式会社 | Substrate processing device |
| CN108701592A (en) * | 2016-03-22 | 2018-10-23 | Ev 集团 E·索尔纳有限责任公司 | Apparatus and method for bonding of substrates |
| CN108058276A (en) * | 2018-01-17 | 2018-05-22 | 江苏金旸太阳能电力科技股份有限公司 | A kind of polysilicon cutting machine with fixing-stable |
| KR102192926B1 (en) * | 2020-05-08 | 2020-12-21 | 주식회사 지에스피컴퍼니 | Film cutting equipment |
| CN111775358A (en) * | 2020-08-25 | 2020-10-16 | 张诗颖 | Diamond wire cutting machine for silicon crystal bar slicing |
| CN112185884A (en) * | 2020-09-29 | 2021-01-05 | 中国船舶重工集团公司第七二四研究所 | Position multi-dimensional high-adaptation bonding tool and use method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114975077A (en) | 2022-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN210959324U (en) | Chip mounter circulation dust collector | |
| CN114975077B (en) | SiC epitaxial wafer processing equipment and method thereof | |
| CN118438302B (en) | An infrared template grinding and dust removal device | |
| CN118418042B (en) | New energy automobile gear processing adsorption type grinding oil filter equipment | |
| CN218690366U (en) | TPE granule processing dust exhaust apparatus | |
| CN215787484U (en) | Automatic rotary marking device | |
| CN109622551A (en) | A kind of burring machine waste material automatic cleaning apparatus | |
| CN213995209U (en) | Drying furnace waste gas high-efficiency processing device | |
| CN212330490U (en) | Filtering mechanism and machine tool with same | |
| CN217707666U (en) | Self-cleaning device of conveyor | |
| CN221604022U (en) | Edging machine with chip collecting function | |
| CN219334701U (en) | Paint spraying device with dust control mechanism | |
| CN222609196U (en) | Polishing dust collector that can clear up fast | |
| CN116619582B (en) | Automatic cutout machine suitable for building brick production | |
| CN222155148U (en) | Automatic grind quick-witted abrasive dust cleaning device | |
| CN212421533U (en) | Dust removal device for paper cutter | |
| CN222385921U (en) | A metal powder 3D printing laser sintering device | |
| CN221371636U (en) | Matching component of neck strap cutting machine | |
| CN221621861U (en) | Wafer grinding device for processing electronic chip | |
| CN219580083U (en) | Pulse type cloth bag dust collector | |
| CN220718701U (en) | Flange polishing dust collector | |
| CN220548020U (en) | Dustproof equipment of polishing in ground | |
| CN221417043U (en) | Chip cleaning device for cutting machine | |
| CN219945616U (en) | Gear surface grinding device | |
| CN220782152U (en) | Sand mixing and dust removing mechanism |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |