CN114966362A - A method for evaluating the bump reliability of plastic packaged flip-chip chips - Google Patents
A method for evaluating the bump reliability of plastic packaged flip-chip chips Download PDFInfo
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Abstract
本发明公开了一种塑封倒装焊芯片凸点可靠性评估方法,包括:一、将封装好的倒装焊芯片进行电性能测试,测试完成后抽取样品进行超声波扫描检查;二、保留一定样品作为对照,对其余样品进行预处理;三、预处理完成后对样品进行超声波扫描检查;四、对样品进行电性能测试;五、将样品分为A、B、C三组,A组进行温度循环、B组进行UHAST、C组进行HAST试验;六、试验完成后对样品进行电性能测试;七、抽部分温度循环后的样品用3DXRAY观察指定凸点;八、对3DXRAY发现异常的凸点切片观察截面;九、结合3DXRAY的俯视图、侧视图和截面观察,判断凸点是空洞还是开裂,如果是空洞,在判据范围内是合格,如果是裂纹且有延伸趋势,则凸点不能保证长期应用的可靠性。
The invention discloses a method for evaluating the reliability of bumps of plastic-encapsulated flip-chip soldering chips, comprising: first, conducting electrical performance testing on the packaged flip-chip soldering chips, and extracting samples for ultrasonic scanning inspection after the test is completed; second, retaining certain samples As a control, the remaining samples were pretreated; 3. After the pretreatment, the samples were subjected to ultrasonic scanning inspection; 4. The samples were tested for electrical properties; Cycle, group B was subjected to UHAST, and group C was subjected to HAST test; 6. After the test was completed, the electrical properties of the samples were tested; 7. Part of the samples after temperature cycling were used to observe the specified bumps with 3DXRAY; 8. Abnormal bumps were found on 3DXRAY Slice and observe the section; 9. Combine the top view, side view and section observation of 3DXRAY to determine whether the bump is a cavity or a crack. If it is a cavity, it is qualified within the scope of the criterion. If it is a crack and has an extension trend, the bump cannot be guaranteed. Reliability for long-term applications.
Description
技术领域technical field
本发明涉及倒装焊工艺领域,具体涉及一种塑封倒装焊芯片凸点可靠性评估方法。The invention relates to the field of flip-chip welding technology, in particular to a method for evaluating the reliability of bumps of plastic-encapsulated flip-chip welding chips.
背景技术Background technique
倒装焊工艺是一种芯片正面向下的直接互连工艺,结构如图2,首先在芯片的金属焊盘上制作金属凸8,然后将芯片7的有源面朝下,使芯片上的凸点与基板6上的金属焊盘对准,通过加热或加压使芯片和基板形成稳定可靠的机械连接和电气连接,之后通过填充underfill 2和塑封料5完成整个封装。采用倒装焊工艺可以使二维互连密度达到最大,同时,由于金属焊盘可以放置在芯片的整个表面,因此在同样面积的芯片上,与常规引线键合工艺相比,金属焊盘的密度和数量可以得到极大的提高,并且由于大大缩短了信号传输路径,使得倒装焊具有优良的电性能和可靠性。The flip-chip welding process is a direct interconnection process with the front side of the chip facing down. The bumps are aligned with the metal pads on the
目前常见的倒装焊工艺有两种,一种为为含球下金属层(UBM)结构,如图1-1,另一种为不含UBM的2P1M封装形式,即第一介质层(PI)4+金属再布线层(Metal)+第二介质(PI/PBO)3,结构如图1-2。不论是哪种形式,在凸点下方都有介质层聚酰亚胺(PI)或者聚苯并噁唑(PBO)3,凸点周围为underfill和molding填充2,在连接到基板时还有基板绿油(SR)层1。不同的有机材料其热膨胀系数、弹性模量、玻璃转化温度(Tg)都不同,在一些温度变化频繁或者剧烈的应用环境中,这些有机材料会对凸点产生拉扯或挤压应力,一旦封装材料填充或者凸点布局不平衡时,这种作用力对凸点的长期作用是无法被忽视的,会造成凸点产生微裂纹,裂纹扩展会造成芯片和基板的电气连接阻值出现异常,影响芯片的可靠性,甚至导致器件失效。At present, there are two common flip-chip soldering processes, one is a metal-under-ball (UBM) structure, as shown in Figure 1-1, and the other is a 2P1M package without UBM, that is, the first dielectric layer (PI )4+metal redistribution layer (Metal)+second medium (PI/PBO)3, the structure is shown in Figure 1-2. Regardless of the form, there is a dielectric layer of polyimide (PI) or polybenzoxazole (PBO) 3 under the bump, underfill and molding fill 2 around the bump, and the substrate when connected to the substrate Green Oil (SR) Layer 1. Different organic materials have different thermal expansion coefficients, elastic modulus, and glass transition temperature (Tg). In some application environments with frequent or severe temperature changes, these organic materials will cause pulling or extrusion stress on the bumps. Once the packaging material When the filling or bump layout is unbalanced, the long-term effect of this force on the bump cannot be ignored, which will cause micro-cracks in the bump, and the crack expansion will cause abnormal electrical connection resistance between the chip and the substrate, affecting the chip. reliability, and even lead to device failure.
传统的塑封芯片封装可靠性考核方法包括以下几个步骤。第一步:预处理,并在预处理前后进行扫描声学检查和电性能测试;第二步:进行温度循环试验、HAST试验、uHAST试验;第三步:试验完成后进行电测试。可靠性评估结果仅依据最终电测试结果评判。The traditional reliability assessment method of plastic chip package includes the following steps. The first step: pretreatment, and scanning acoustic inspection and electrical performance test before and after the pretreatment; second step: temperature cycle test, HAST test, uHAST test; third step: after the test is completed, conduct electrical test. The reliability evaluation results are only judged based on the final electrical test results.
基于可靠性的考虑,塑封倒装焊芯片有凸点作为芯片和基板的电气连接,凸点若产生微裂纹,可能在电参数测试中无法明显体现,但对长期使用的可靠性带来隐患,裂纹扩张会显著影响器件电性能。也即,传统对塑封器件封装可靠性的考核方法中,缺乏对倒装焊凸点的可靠性评价内容,存在无法在早期识别封装风险的问题。Based on the consideration of reliability, the plastic-encapsulated flip-chip has bumps as the electrical connection between the chip and the substrate. If microcracks occur in the bumps, it may not be clearly reflected in the electrical parameter test, but it will bring hidden dangers to the reliability of long-term use. Crack propagation can significantly affect device electrical properties. That is, in the traditional assessment method for the packaging reliability of plastic packaged devices, there is a lack of reliability evaluation content for flip-chip solder bumps, and there is a problem that packaging risks cannot be identified at an early stage.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种塑封倒装焊芯片凸点可靠性评估方法,在器件出厂前提前预判和释放倒装焊凸点结构开裂的风险。The purpose of the present invention is to provide a method for evaluating the reliability of bumps of plastic-encapsulated flip-chip soldering chips, which can predict and release the risk of cracking of the flip-chip soldering bump structure in advance before the device leaves the factory.
为了达到上述的目的,本发明提供一种塑封倒装焊芯片凸点可靠性评估方法,包括:In order to achieve the above-mentioned purpose, the present invention provides a method for evaluating the bump reliability of a plastic package flip-chip chip, comprising:
步骤一、将封装好的倒装焊芯片进行电性能测试,测试完成后抽取用于鉴定的样品进行超声波扫描检查;Step 1. Test the electrical performance of the packaged flip-chip chip, and after the test is completed, extract samples for identification for ultrasonic scanning inspection;
步骤二、保留一定样品作为对照,对其余样品进行预处理;Step 2: Retain a certain sample as a control, and pretreat the rest of the samples;
步骤三、预处理完成后对样品进行超声波扫描检查;
步骤四、对样品进行电性能测试;The fourth step is to test the electrical properties of the sample;
步骤五、将样品分为A、B、C三组,A组进行温度循环、B组进行UHAST、C组进行HAST试验;
步骤六、试验完成后对样品进行电性能测试;
步骤七、抽部分温度循环后的样品用3DXRAY观察指定凸点;
步骤八、对3DXRAY发现异常的凸点切片观察截面;
步骤九、结合3DXRAY的俯视图、侧视图和截面观察,判断凸点是空洞还是开裂,如果是空洞,在判据范围内是合格,如果是裂纹且有延伸趋势,则凸点不能保证长期应用的可靠性。
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述步骤二中,预处理具体为:a、外观检查;b、温度循环:-40℃~60℃,5个循环;c、烘烤:125℃下烘烤24h;d、吸潮,条件为30℃/60%RH,192h;e、回流焊:3次。In the above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip chips, wherein, in the second step, the pretreatment is specifically: a, appearance inspection; b, temperature cycle: -40°C to 60°C, 5 cycles; c , Baking: Bake at 125°C for 24h; d. Moisture absorption, under the condition of 30°C/60%RH, 192h; e. Reflow soldering: 3 times.
回流焊条件如表1。Reflow soldering conditions are shown in Table 1.
表1回流焊条件Table 1 Reflow Soldering Conditions
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述步骤五中,温度循环试验条件包括:从热到冷或从冷到热的总转换时间不得超过1min,器件在15min内达到规定的温度。The above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip chips, wherein, in the
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述温度循环试验条件为:试验温度为-55℃~125℃,循环700-1000次。In the above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip chips, the temperature cycle test conditions are: the test temperature is -55°C to 125°C, and the cycle is performed 700-1000 times.
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述温度循环试验条件为:试验温度为-65℃~150℃,循环500次。In the above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip chips, the temperature cycle test conditions are as follows: the test temperature is -65°C to 150°C, and the cycle is performed 500 times.
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述步骤五中,UHAST试验条件包括:将芯片放置于温湿箱内,温湿度设置为130℃/85%RH,保持96h,此时芯片不施加偏置任何电压。In the above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip chips, wherein, in the fifth step, the UHAST test conditions include: placing the chip in a temperature and humidity box, setting the temperature and humidity to 130°C/85% RH, and maintaining it for 96 hours , the chip does not apply any bias voltage at this time.
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述步骤五中,HAST试验条件包括:将芯片放置于温湿箱内,温湿度设置为130℃/85%RH,保持96h,此时对芯片电源管脚施加1.1Vdd偏压,芯片使能管脚置于低电位,芯片处于不工作状态,地管脚接地,其余相邻IO管脚交错置于高电位和接地,若IO管脚和电源管脚相邻,则该IO管脚接地,若IO管脚和地管脚相邻,则该IO管脚置于高电位,若IO管脚同时和电源管脚和地管脚相邻,则做接地处理,保证芯片有尽可能多的相邻管脚有电压差。The above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip chips, wherein, in the fifth step, the HAST test conditions include: placing the chip in a temperature and humidity box, setting the temperature and humidity to 130°C/85% RH, and keeping it for 96 hours , at this time, apply a 1.1Vdd bias to the chip power pin, the chip enable pin is placed at a low potential, the chip is in a non-working state, the ground pin is grounded, and the other adjacent IO pins are alternately placed at high potential and ground. If the IO pin is adjacent to the power pin, the IO pin is grounded. If the IO pin is adjacent to the ground pin, the IO pin is placed at a high potential. If the IO pin is connected to the power pin and the ground pin at the same time If the pins are adjacent to each other, grounding is performed to ensure that the chip has as many adjacent pins as possible with a voltage difference.
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述步骤七中,凸点的选择包括:优先应力释放集中位置,如四边和四角的凸点;优先模拟电路区域流通电流较大的凸点,如电源凸点。In the above-mentioned method for evaluating the reliability of bumps of a plastic-encapsulated flip-chip chip, wherein, in the seventh step, the selection of bumps includes: prioritizing stress release concentrated locations, such as bumps on four sides and four corners; prioritizing the flow of current in the analog circuit area. Large bumps, such as power bumps.
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述3DXRAY观察时先观察凸点中间截面,如果有连续孔洞需要补充拍俯视图,结合俯视图和凸点多截面的X光照片判断异常空洞区域是否连续。In the above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip chips, the 3DXRAY first observes the middle section of the bump, and if there are continuous holes, a top view needs to be taken, and the top view and the multi-section X-ray photos of the bump are judged. Whether the anomalous void region is continuous.
上述一种塑封倒装焊芯片凸点可靠性评估方法,其中,所述步骤八中,切片观察截面具体为:研磨需要距离目标截面有一段距离,接近目标截面时使用离子束剖面研磨,直到暴露目标截面。In the above-mentioned method for evaluating the reliability of bumps of plastic-encapsulated flip-chip soldering chips, wherein, in the
与现有技术相比,本发明的技术有益效果是:Compared with the prior art, the technical beneficial effects of the present invention are:
现有的可靠性考核方法未针对塑封倒装焊凸点结构本身可靠性,而只通过电性能测试判定整个器件的可靠性,存在可靠性评估不充分的风险。本发明提出了在塑封器件可靠性流程考核中增加温度循环试验的条件选择,增加温度循环试验后通过3DXRAY观察指定凸点,以及凸点开裂的确认方法。The existing reliability assessment method does not aim at the reliability of the plastic package flip-chip bump structure itself, but only judges the reliability of the entire device through the electrical performance test, and there is a risk of insufficient reliability assessment. The invention proposes a condition selection for adding a temperature cycle test in the reliability process assessment of a plastic packaged device, observing a designated bump through 3DXRAY after adding the temperature cycle test, and a method for confirming the cracking of the bump.
本发明通过对塑封倒装焊器件施加凸点的敏感应力,除了通过电性能测试,增加了对凸点易损部位的检查,可以充分评估凸点的可靠性。By applying the sensitive stress of the bump to the plastic-encapsulated flip-chip soldering device, in addition to passing the electrical performance test, the invention increases the inspection of the vulnerable part of the bump, and can fully evaluate the reliability of the bump.
附图说明Description of drawings
本发明的一种塑封倒装焊芯片凸点可靠性评估方法由以下的实施例及附图给出。A method for evaluating the reliability of bumps of a plastic packaged flip-chip chip of the present invention is given by the following embodiments and accompanying drawings.
图1为常见的倒装焊工艺两种结构示意图;Figure 1 is a schematic diagram of two structures of a common flip-chip welding process;
图2为塑封倒装焊器件结构示意图;FIG. 2 is a schematic structural diagram of a plastic-encapsulated flip-chip device;
图3为塑封倒装焊器件凸点可靠性考核方法流程图;Figure 3 is a flowchart of a method for evaluating the reliability of bumps of plastic packaged flip-chip devices;
图4为凸点观察位置示意图。Figure 4 is a schematic diagram of the observation position of the bump.
其中,图1:1-基板绿油(SR)层、2-underfill和molding填充、3-第二介质(PI/PBO)、4-第一介质层(PI);Among them, Figure 1: 1-substrate green oil (SR) layer, 2-underfill and molding filling, 3-second medium (PI/PBO), 4-first medium layer (PI);
图2:2-underfill、5-塑封料、6-基板、7-芯片、8-金属凸点;Figure 2: 2-underfill, 5-plastic compound, 6-substrate, 7-chip, 8-metal bump;
图4:9、10、11、12、13为观察凸点截面。Figure 4: 9, 10, 11, 12, 13 are the cross-sections of the observed bumps.
具体实施方式Detailed ways
以下将结合附图对本发明的一种塑封倒装焊芯片凸点可靠性评估方法作进一步的详细描述。A method for evaluating the bump reliability of a plastic package flip-chip chip of the present invention will be described in further detail below with reference to the accompanying drawings.
步骤(1)、将封装好的倒装焊芯片按照产品手册或者详细规范进行电性能测试,测试完成后抽取用于鉴定的样品147只进行超声波扫描检查;Step (1), conduct the electrical performance test of the packaged flip-chip chip according to the product manual or detailed specification, and after the test is completed, 147 samples for identification are extracted for ultrasonic scanning inspection;
步骤(2)、保留3只样品作为对照,对其余144只样品进行预处理,预处理条件参考JESD22-A113设定;In step (2), 3 samples were retained as controls, and the remaining 144 samples were pretreated, and the pretreatment conditions were set with reference to JESD22-A113;
步骤(3)、预处理完成后对样品进行超声波扫描检查;Step (3), carry out ultrasonic scanning inspection to the sample after the pretreatment is completed;
步骤(4)、按照产品手册或者详细规范进行电性能测试;Step (4), conduct electrical performance test according to the product manual or detailed specification;
步骤(5)、将144只样品分为A、B、C三组,每组45+3只,A组进行温度循环、B组进行UHAST、C组进行HAST试验,试验条件如下:Step (5), divide 144 samples into three groups of A, B, and C, each group of 45+3, A group carries out temperature cycle, B group carries out UHAST, C group carries out HAST test, test conditions are as follows:
(5.1)温度循环:从热到冷或从冷到热的总转换时间不得超过1min,器件应在15min内达到规定的温度。试验温度为-55℃~125℃,循环700次,加严1000次(可选);也可选-65℃~150℃,循环500次。(5.1) Temperature cycle: The total conversion time from hot to cold or from cold to hot should not exceed 1min, and the device should reach the specified temperature within 15min. The test temperature is -55℃~125℃, cycle 700 times, and tighten 1000 times (optional); also can choose -65℃~150℃, cycle 500 times.
(5.2)UHAST:130℃/85%RH,96h。(5.2) UHAST: 130°C/85%RH, 96h.
(5.3)电源施加1.1Vdd偏压,使能管脚拉低,其余相邻IO管脚交错拉高拉低,130℃/85%RH,96h。(5.3) The power supply applies a 1.1Vdd bias voltage, the enable pin is pulled down, and the other adjacent IO pins are alternately pulled up and down, 130°C/85%RH, 96h.
步骤(6)、试验完成后按照产品手册或者详细规范进行电性能测试;Step (6), after the test is completed, conduct the electrical performance test according to the product manual or detailed specification;
步骤(7)、抽3只温度循环后的样品用3DXRAY观察指定凸点(图4),凸点的选择有如下原则:1.优先应力释放集中位置,如四边和四角的凸点9、10;2.优先模拟电路区域流通电流较大的凸点,如电源凸点;3.中间位置凸点11。3DXRAY观察时先观察凸点中间截面9,如果有连续孔洞需要补充拍俯视图,结合俯视图和凸点多截面的X光照片判断异常空洞区域是否连续。Step (7), take 3 samples after temperature cycle and observe the designated bumps with 3DXRAY (Fig. 4). The selection of bumps is based on the following principles: 1. Prioritize stress release concentration locations, such as bumps on four sides and four
步骤(8)、对3DXRAY发现异常的凸点切片观察截面,注意研磨需要距离目标截面(如12)有一段距离13,接近目标截面时使用离子束剖面研磨(CP),直到暴露目标截面12;Step (8), observe the cross-section of the abnormal bumps found in 3DXRAY, pay attention to the need for a
步骤(9)、结合3DXRAY的俯视图、侧视图和截面观察,判断凸点是空洞还是开裂,如果是空洞,在判据范围内是合格,如果是裂纹且有延伸趋势,则凸点不能保证长期应用的可靠性。Step (9), combined with the top view, side view and cross-sectional observation of 3DXRAY, determine whether the bump is a cavity or a crack. If it is a cavity, it is qualified within the scope of the criterion. If it is a crack and has an extension trend, the bump cannot guarantee long-term. Application reliability.
本发明的方法能有效激发因各封装材料热膨胀系数不匹配、模量不同所导致的凸点开裂,凸点开裂会影响产品使用寿命。The method of the invention can effectively stimulate the bump cracking caused by the mismatch of thermal expansion coefficients and the different moduli of the packaging materials, and the bump cracking will affect the service life of the product.
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