CN114959842B - Electroplating device and method for manufacturing packaging structure - Google Patents

Abstract

The present disclosure provides an electroplating apparatus and a method of manufacturing a package structure. According to some embodiments of the present disclosure, an electroplating apparatus includes a first bus; and a second bus, wherein an included angle is formed between the first bus and the second bus, the first bus comprises a first end portion close to the second bus and a first portion far away from the second bus, and a gap between cathodes of the first end portion of the first bus is larger than a gap between cathodes of the first portion.

Description

Electroplating device and method for manufacturing packaging structure

Technical Field

The present disclosure relates to an electroplating apparatus, and more particularly to a method of forming a package structure using the electroplating apparatus.

Background technique

In order to increase the yield, quadrilateral substrates and electroplating devices applied to quadrilateral substrates have begun to be widely used in various semiconductor manufacturing and/or packaging processes, such as electroplating processes. When performing an electroplating process on a square substrate, electrodes arranged in a corresponding substrate shape are used. Since charges are easily accumulated at the corners of the substrate, the electric field at the corners is greater than the electric field in other areas, causing the metal ion deposition rate at the corners to be greater than that in other areas, and the formed electroplating layer will have a problem of poor uniformity. Therefore, it is necessary to seek a new electroplating device and method to improve the above-mentioned problems.

Summary of the invention

According to some embodiments of the present disclosure, an electroplating device includes: a first bus line; and a second bus line, wherein the first bus line and the second bus line have an angle between them, the first bus line includes a first end close to the second bus line, and a first part away from the second bus line, wherein the cathode gap of the first end of the first bus line is larger than the cathode gap of the first part.

According to some embodiments of the present disclosure, a method for manufacturing a packaging structure includes: providing an electroplating device, which includes a first bus and a second bus, wherein the first bus and the second bus have an angle between them, and the electroplating device further includes a first block close to the angle and a second block away from the angle; and providing an electric field of the first bus located in the first block that is smaller than the electric field of the first bus located in the second block.

BRIEF DESCRIPTION OF THE DRAWINGS

When the following detailed description is read together with the accompanying drawings, various aspects of the present disclosure can be easily understood according to the following detailed description. It should be noted that various features may not be drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for the sake of clarity of discussion.

FIG. 1 is a cross-sectional view of a portion of an electroplating apparatus according to a comparative example of the present disclosure.

FIG. 2 is a bottom view of an electroplating apparatus according to a comparative example of the present disclosure.

FIG. 3 is a top view of an electroplating device and a substrate according to a comparative example of the present disclosure.

FIG. 4 is a schematic diagram showing metal concentrations in different regions of a substrate during an electroplating process.

FIG. 5 is a cross-sectional view of a package structure formed by using an electroplating device according to a comparative example.

FIG. 6 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 7 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 8 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 9 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 10 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 11 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 12 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 13 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 14 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 15 is a cross-sectional view of a package structure according to an embodiment of the present disclosure.

Throughout the drawings and detailed description, common reference numerals are used to indicate the same or similar components. The present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

Detailed ways

The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. The specific examples of components and arrangements are described below. Of course, these are only examples and are not intended to be restrictive. In the present disclosure, references to forming or arranging a first feature on or above a second feature may include embodiments in which the first feature and the second feature are formed or arranged to be in direct contact, and may also include embodiments in which additional features may be formed or arranged between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not itself indicate the relationship between the various embodiments and/or configurations discussed.

The following is a detailed discussion of embodiments of the present disclosure. However, it should be understood that the present disclosure provides many applicable concepts that can be embodied in a variety of specific environments. The specific embodiments discussed are merely illustrative and do not limit the scope of the present disclosure.

FIG. 1 is a cross-sectional view of a portion of an electroplating apparatus 10 ′ and a substrate 20 according to a comparative example of the present disclosure.

As shown in FIG. 1 , the electroplating device 10' may include a substrate carrier 11', an electrode fixing member 12' and a conductive layer 13'. The electroplating device 10' may be an electroplating device for performing, for example, an electroplating process. Specifically, the substrate 20 may be placed on the electroplating device 10' and placed in an electroplating tank (not shown) together with the electroplating device 10' to perform an electroplating process to form a circuit layer (or electroplating layer) on the surface of the substrate 20. In FIG. 1 , only some components of the electroplating device 10' are shown. The electroplating device 10' may have other components, such as a power supply, an anode and/or other components.

The substrate carrier 11 ′ can be used to carry the substrate 20 . The substrate carrier 11 ′ can have a groove (not shown) to accommodate the substrate 20 . The substrate carrier 11 ′ can have other components for fixing the substrate 20 .

The electrode fixing component 12' can be used to set or fix the conductive layer 13'. The electrode fixing component 12' can be connected to the substrate carrier 11'. For example, the electrode fixing component 12' can be set on the substrate carrier 11' and directly contact the substrate carrier 11'. The electrode fixing component 12' and the substrate carrier 11' can be formed as one piece. Alternatively, the electrode fixing component 12' and the substrate carrier 11' can be separated into two separate components by disassembly. The electrode fixing component 12' may not be connected to the substrate carrier 11'. For example, the electrode fixing component 12' can be mounted on the substrate carrier 11' via other components.

The conductive layer 13' may be disposed on the electrode fixing member 12'. The conductive layer 13' may include a connecting member 131' and a cathode 132'. The connecting member 131' may be used to electrically connect and/or fix a plurality of cathodes 132'. The cathode 132' may be used to contact the substrate 20 to provide current to the surface of the substrate 20. For example, the connecting member 131' may be connected to a power source, and when the cathode 132' contacts the substrate 20, current may be applied to the surface of the substrate 20 via the connecting member 131' and the cathode 132'.

The substrate 20 may be a glass substrate, a wafer and/or other suitable substrates. The surface of the substrate 20 may be used to form a circuit layer. The circuit layer may be used to electrically connect, for example, one or more electronic components, such as a chip or other suitable electronic components.

A mask layer 31 may be disposed on the substrate 20. The mask layer 31 may be an insulating material, such as a photoresist or other suitable components. The mask layer 31 may be used to define a plating pattern formed on the surface of the substrate 20. For example, the mask layer 31 may cover a first portion of the surface of the substrate 20 and expose a second portion of the surface of the substrate 20. A seed layer (not shown) may be formed on the second portion of the surface of the substrate 20, and a circuit layer may be formed on the second portion of the surface of the substrate 20 by an electroplating process.

The support member 32 can be used to separate the shielding layer 31 and the electrode fixing member 12 ′. The length of the support member 32 can be adjusted to adjust the relative position of the cathode 132 ′ and the substrate 20 .

Fig. 2 is a bottom view of an electroplating device 10' according to a comparative example of the present disclosure. For the sake of simplicity, the substrate carrier 11' is not shown.

As shown in FIG. 2 , the electrode fixing member 12 ′ may have a quadrilateral profile. The electrode fixing member 12 ′ may also have other suitable profiles, for example, a polygonal or other suitable profiles. The electrode fixing member 12 ′ may be an annular profile with a hollowed-out pattern in the central portion, or may have a profile without a hollowed-out pattern in the central portion. The electrode fixing member 12 ′ may cover the connecting member 131 ′ and/or the cathode 132 ′. The electrode fixing member 12 ′ may completely or partially cover the connecting member 131 ′ and/or the cathode 132 ′.

The connecting member 131' may have a quadrilateral profile. The connecting member 131' may also have other suitable profiles, for example, a polygonal or other suitable profiles. The connecting member 131' may be a ring profile with a hollowed-out pattern in the central portion. The conductive layer 13 or the connecting member 131' may have a bus line 13e1 and a bus line 13e2 adjacent to the bus line 13e1. The bus line 13e1 may extend in a first direction, and the bus line 13e2 may extend in a second direction. The first direction may be different from the second direction. The first direction may be substantially perpendicular to the second direction. The bus line 13e1 may be connected to the bus line 13e2. The bus line 13e1 may not be connected to the bus line 13e2. The angle 13c1 may be formed by the bus line 13e1 and the bus line 13e2.

The cathode 132' may be disposed on each side of the connecting member 131', such as the bus 13e1 and the bus 13e2. At least one cathode 132' is present on one side of the connecting member 131' (such as the bus 13e1) and is connected to the connecting member 131'. Each cathode 132' may extend from the side of the connecting member 131' (such as the bus 13e2 of the bus 13e1) toward the central portion of the connecting member 131' (such as the hollowed-out pattern defined by the connecting member 131'). Each cathode 132' may have a portion overlapping (or contacting) the connecting member 131' and a portion not overlapping (or contacting) the connecting member 131'.

As shown in FIG. 2 , the electrode fixing member 12 ′ may have a non-end R1 and an end R2 at the corresponding bus 13e1. When viewed from an upward or downward perspective, the non-end R1 and the end R2 may have the same area. The distance between the end R2 and the angle 13c1 may be different from the distance between the non-end R1 and the angle 13c1. The end R2 is closer to the angle 13c1 than the non-end R1. The non-end R1 and the end R2 are imaginary areas, which are used to calculate the area ratio of the cathode 132 ′ in a unit area. Specifically, the area ratio of the cathode 132 ′ in the non-end R1 can be defined as the area of the cathode 132 ′ overlapping with the non-end R1 in an upward or downward perspective; the area ratio of the cathode 132 ′ in the end R2 can be defined as the area of the cathode 132 ′ overlapping with the end R2 in an upward or upward perspective. As shown in FIG. 2 , in the comparative example, the area ratio of the cathode 132 ′ in the non-end portion R1 is the same as the area ratio of the cathode 132 ′ in the end portion R2 .

3 is a top view of the electroplating device 10' and the substrate 20 according to the comparative example of the present disclosure. To clearly show the positional relationship between the substrate 20 and the cathode 132', some components are omitted. In addition, the portion of the substrate 20 covered by the cathode 132' is indicated by a dotted line.

As shown in FIG. 3 , the substrate 20 may have a quadrilateral profile. The substrate 20 may also have other suitable profiles, such as a polygon or other suitable profiles. The substrate 20 and the cathode 132' have overlapping areas. The cathode 132' may have a portion in contact with the substrate 20. The area ratio of the cathode 132' in the non-end R1 is roughly proportional to the area of the cathode 132' in contact with the substrate 20 in the non-end R1 corresponding to the substrate 20, and the area ratio of the cathode 132' in the end R2 is roughly proportional to the area of the cathode 132' in contact with the substrate 20 in the end R2 corresponding to the substrate 20. In a unit area, the area of the cathode 132' in contact with or overlapping the substrate 20 affects the current density received by this unit area. For example, if the area of the cathode 132' in contact with or overlapping the substrate 20 per unit area is larger, the current density received by this unit area is larger. In the comparative example, since the area ratio of the cathode 132' in the non-end R1 is the same as the area ratio of the cathode 132' in the end R2, the current density applied by the electroplating device 10' at the non-end R1 of the substrate 20 is substantially the same as the current density applied at the end R2 of the substrate 20.

As shown in FIG3 , the substrate 20 has an angle corresponding to the angle of the conductive layer 13 ′. For example, the substrate 20 has an angle 20c1 corresponding to the angle 13c1, and an angle 20c2 corresponding to the angle 13c2. When the electroplating process is performed, the angles of the substrate 20 (such as the angle 20c1 and the angle 20c2) are prone to generate corona discharge, so when the electroplating process is performed, the angles 20c1 and the angle 20c2 are more likely to generate a relatively large electric field, which affects the thickness and uniformity of the electroplated layer. Specifically, if the same current density is given to both the position near the angle 20c1 (for example, corresponding to the end R2) and the position away from the angle 20c1 (for example, corresponding to the non-end R1) in the substrate 20, a relatively large electric field will be generated near the angle 20c1 (for example, corresponding to the end R2) in the substrate 20, and a relatively large electric field will be generated away from the angle 20c1 (for example, corresponding to the non-end R1), so that the thickness of the circuit layer near the angle and away from the angle are different.

Referring to FIG. 4 , FIG. 4 is a schematic diagram showing the concentration of metal ions M corresponding to different regions of the substrate 20 when performing an electroplating process in a comparative example.

When performing the electroplating process, the electroplating device 10' and the substrate 20 are placed in an electroplating tank (not shown), and the conductive layer 13' of the electroplating device 10' can be electrically connected to the cathode of a power source (not shown). An electric field is generated between the anode and cathode of the power source, so that the metal ions M in the electroplating solution are gathered to the cathode due to the electric field, and are reduced to metal and deposited on the substrate 20. As mentioned above, due to the tip discharge, if the same current density is applied to different areas of the substrate 20, a larger electric field can be generated near the angle 20c1 and near the angle 20c2 in the substrate 20, and a smaller electric field can be generated far from the angle 20c1 and far from the angle 20c2 in the substrate 20. Therefore, the metal ions M in the electroplating solution are more likely to gather near the angle 20c1 and the angle 20c2, and are less likely to gather far from the angle 20c1 and the angle 20c2, so that the concentration of the metal ions M near the angle 20c1 and the angle 20c2 is relatively large, and the concentration of the metal ions M far from the angle 20c1 and the angle 20c2 is relatively small. As a result, there is a relatively large thickness difference between the thickness of the circuit layer formed near the angle (for example, the angle 20c1 and the angle 20c2) and the thickness of the circuit layer formed far from the angle.

FIG. 5 is a cross-sectional view of a package structure 40 ′ formed by using the electroplating device 10 ′ of the comparative example.

After the electroplating process is performed, the circuit layer 31', the circuit layer 32' and the circuit layer 33' are formed on the substrate 20. The circuit layer 31', the circuit layer 32' and the circuit layer 33' may include metals, such as copper, silver, gold, aluminum, nickel, zinc, chromium or other suitable materials. Among them, the circuit layer 31' is arranged near the angle 20c1, the circuit layer 33' is arranged near the angle 20c2, and the circuit layer 32' is arranged away from the angle 20c1 and the angle 20c2. As previously described, due to the tip discharge, the thickness of the circuit layer 31' formed at the corresponding angle 20c1 will be greater than the thickness of the circuit layer 32', and the thickness of the circuit layer 33' formed at the corresponding angle 20c2 will be greater than the thickness of the circuit layer 32'. In the comparative example, the standard deviation of the uniformity of the thickness of the circuit layer is greater than 10%, which has a negative impact on the subsequent process (such as mounting electronic components on the circuit layer), thereby reducing the yield of the packaging structure 40'.

In order to further improve the yield of the electroplating process, the embodiments of the present disclosure pre-design the cathode pattern configuration of the electroplating device so that the cathodes in different areas have different areas and/or gaps, or control the different currents given to the cathodes in different areas to compensate for the electric field unevenness problem caused by the aforementioned tip cathode.

FIG. 6 is a top view of an electroplating device 10a and a substrate 20 according to an embodiment of the present disclosure. For simplicity, some components (such as a substrate carrier, an electrode fixing member) are not shown. The electroplating device 10a may be the same or similar to the electroplating device 10', one of the differences being the cathode 132a. The cathode 13 may include a connecting member 131 and a cathode 132a. The connecting member 131 may be the same as the connecting member 131'. The cathode 132a includes a cathode 1321 located in the non-end R1 and a cathode 1322 located in the end R2. In some embodiments, the first area ratio occupied by the cathode 1321 in the non-end R1 is different from the second area ratio occupied by the cathode 1322 in the end R2. In some embodiments, the first area ratio is greater than the second area ratio. In some embodiments, from the perspective of the top view, the area of each cathode 1321 is the same as the area of each cathode 1322, that is, the area of each cathode 1321 in contact with the substrate 20 is equal to the area of each cathode 1322 in contact with the substrate 20. In some embodiments, the number of cathodes 1321 in non-end portion R1 is greater than the number of cathodes 1322 in end portion R2. In some embodiments, the pitch of cathodes 1321 in non-end portion R1 is smaller than the pitch of cathodes 1322 in end portion R2.

In this embodiment, the area ratio of the cathode (e.g., cathode 1321 and cathode 1322) per unit area is changed to adjust the contact or overlap area of cathode 132a and substrate 20, thereby changing the current density applied to substrate 20. As shown in FIG6 , the second area ratio of cathode 1322 at end R2 near angle 13c1 is smaller than the first area ratio of cathode 1321 at non-end R1 far from angle 13c1, so that the current density obtained at corresponding end R2 of substrate 20 (or near angle 20c1) is smaller than the current density obtained at corresponding non-end R1 of substrate 20 (or far from angle 20c1). In this embodiment, a smaller current density is given to a relatively strong electric field in substrate 20, and a larger current density is given to a relatively weak electric field in substrate 20, so that the difference in electric field generated at the above two places becomes smaller. In this way, the uniformity of the thickness of the circuit layer formed on substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

FIG7 is a top view of an electroplating device 10b according to an embodiment of the present disclosure. The electroplating device 10b may be the same or similar to the electroplating device 10a, one of the differences being the arrangement of the cathode 132b. The connecting member 131 may have a bus 13e3, and the bus 13e3 may be adjacent to the bus 13e1 and face the bus 13e2. The angle 13c3 may be formed by the bus 13e1 and the bus 13e3. The electroplating device 10b may have an end R3. The end R2 and the end R3 are located on both sides of the bus 13e1. The non-end R1 is located between the end R2 and the end R3. Compared to the non-end R1, the end R3 may be closer to the angle 13c3. In some embodiments, the first area ratio occupied by the cathode 1321 in the non-end R1 is different from the third area ratio occupied by the cathode 1323 in the end R3. In some embodiments, the third area ratio occupied by the cathode 1323 at the end R3 near the angle 13c3 is less than the first area ratio occupied by the cathode 1321 at the non-end R1 away from the angle 13c1. In some embodiments, the third area ratio occupied by the cathode 1323 at the end R3 near the angle 13c3 is substantially equal to the second area ratio occupied by the cathode 1322 at the end R2 near the angle 13c1.

In this embodiment, the area ratio of the cathode (e.g., cathode 1321, cathode 1322, and cathode 1323) per unit area is changed to adjust the contact or overlapping area of cathode 132b and substrate 20, thereby changing the current density applied to substrate 20. As shown in FIG7 , the area ratio of the cathode 132b relative to non-end R1, end R2, and end R3 is changed to adjust the current density obtained at the non-end R1, end R2, and end R3 of substrate 20. In this embodiment, a smaller current density is given to a relatively strong electric field easily generated in the substrate 20, and a larger current density is given to a relatively weak electric field easily generated in the substrate 20, so that the difference in electric field generated in the above two places becomes smaller. In this way, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

FIG8 is a top view of an electroplating device 10c according to an embodiment of the present disclosure. The electroplating device 10c may be the same or similar to the electroplating device 10a, one of the differences being the cathode 132c. In some embodiments, the first area ratio occupied by the cathode 1321 in the non-end R1 is different from the second area ratio occupied by the cathode 1322 in the end R2. In some embodiments, the area of at least one of the plurality of cathodes 1321 located in the non-end R1 is different from the area of at least one of the plurality of cathodes 1322 located in the end R2. In some embodiments, the area of at least one of the plurality of cathodes 1321 located in the non-end R1 is greater than the area of at least one of the plurality of cathodes 1322 located in the end R2. In some embodiments, the gaps between the plurality of cathodes 1321 may be the same as the gaps between the plurality of cathodes 1322. In some embodiments, the gaps between the plurality of cathodes 1321 may be different from the gaps between the plurality of cathodes 1322.

In this embodiment, the area ratio of the cathode (e.g., cathode 1321 and cathode 1322) per unit area is changed to adjust the contact or overlapping area between the cathode and the substrate 20, thereby changing the current density applied to the substrate 20. In this way, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is increased.

FIG. 9 is a top view of an electroplating device 10d according to an embodiment of the present disclosure. The electroplating device 10d may be the same or similar to the electroplating device 10a, one of the differences being the cathode 132d. In some embodiments, the first area ratio occupied by 132d in the non-end R1 is different from the second area ratio occupied by the cathode 132d in the end R2. In some embodiments, the cathode 132d may extend continuously from the non-end R1 along a first direction (e.g., the extension direction of the bus 13e1) to the end R2. In some embodiments, the cathode 132d has a first length L1 in the non-end R1 along a second direction (e.g., the extension direction of the bus 13e2), and has a second length L2 in the end R2 along the second direction, and the first length L1 is different from the second length L2. In some embodiments, the first length L1 is greater than the second length L2. In other embodiments, the cathode 132d may extend discontinuously from the non-end R1 along the first direction to the end R2.

FIG. 10 is a top view of an electroplating device 10e according to an embodiment of the present disclosure. The electroplating device 10e may be the same or similar to the electroplating device 10a, one of the differences being the connecting member 131. In some embodiments, the connecting member 131 may include a bus 13e4 and a bus 13e5. In some embodiments, the bus 13e4 and the bus 13e5 may form a quadrilateral. In some embodiments, the bus 13e4 may be electrically connected to the same power source as the bus 13e5. In some embodiments, the bus 13e4 and the bus 13e5 are connected in parallel. In some embodiments, the bus 13e4 may be electrically connected to a different power source than the bus 13e5. The cathode 132e may include a cathode 1323 and a cathode 1324. The cathode 1323 may be electrically connected to the bus 13e4. The cathode 1324 may be electrically connected to the bus 13e5. When the bus 13e4 and the bus 13e5 are electrically connected to different power sources, the current density corresponding to different areas of the substrate 20 can be adjusted by applying different voltages to the bus 13e4 and the bus 13e5.

FIG. 11 is a top view of an electroplating apparatus 10 f according to an embodiment of the present disclosure.

In some embodiments, the electroplating device 10f may include a block (or portion) D1 and a block (or portion) D2. The bus 13e1 includes an end R2, an end R3, and a non-end R1. The bus 13e2 includes an end R4, an end R6, and a non-end R5. The end R2 is close to the angle 13c1, and the end R3 and the non-end R1 are far away from the angle 13c1. The end R4 is close to the angle 13c1, and the non-end R5 and the end R6 are far away from the angle 13c1. In some embodiments, the block D1 includes the end R2 of the bus 13e1 and the end R4 of the bus 13e2. The block D2 includes the end R3 and the non-end R1 of the bus 13e1 relative to the end R2. In the electroplating device 10f of some embodiments, the electric field of different blocks can be adjusted by pre-changing the pattern configuration of the cathode of the electroplating device so that the cathodes of different areas have different areas and/or gaps, or controlling the different currents given to the cathodes of different areas, for example, providing the electric field of the bus 13e1 located in the block D1 to be smaller than the electric field of the bus 13e1 located in the block D2. In this way, the sum of the electric field of the bus 13e1 and the bus 13e2 located in the block D1 will be substantially the same as the electric field of the bus 13e1 located in the block D2. That is, the electric field in the block D1 will be substantially the same as the electric field in the block D2. In some embodiments, the gap of the cathode 1322 of the block D1 of the electroplating device 10f is larger than the gap of the cathode 1323 of the block D2. In some embodiments, the gap of the cathode 1322 of the bus 13e1 of the electroplating device 10f is larger than the gap of the cathode 1323 of the bus 13e1. In some embodiments, the gap of the cathode 1326 at the end R6 of the electroplating device 10f is larger than the gap of the cathode 1324 at the end R4. In some embodiments, the gap of the cathode 1326 of the bus 13e2 of the electroplating device 10f is larger than the gap of the cathode 1324 of the bus 13e2. In some embodiments, the method of adjusting the electric field may include providing a current to the end R2 of the bus 13e1 and not providing a current to the end R4 of the bus 13e2, or providing a current to the end R4 of the bus 13e2 and not providing a current to the end R2 of the bus 13e1. In this embodiment, the bus 13e1 and the bus 13e2 are not (physically) connected. In some embodiments, the cathode 1321 of the bus 13e1 and the cathode 1324 of the bus 13e2 do not overlap each other.

In this embodiment, a smaller electric field is applied to the portion of the bus corresponding to the angle of the substrate 20, and a larger electric field is applied to the portion of the bus away from the angle, so that the electric field sum (or electric flux) of the two blocks is substantially the same. In this way, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is increased.

FIG. 12 is a top view of an electroplating apparatus 10g according to an embodiment of the present disclosure.

In some embodiments, the electroplating device 10f may include a block (or part) D1, a block (or part) D2, and a block (or part) D2'. Block D1 includes the end R2 of the bus 13e1 and the end R4 of the bus 13e2. Block D2 includes the non-end R1 of the bus 13e1. Block D2' includes the non-end R5 of the bus 13e2. In the electroplating device 10g of some embodiments, the electric field of different blocks can be adjusted by pre-changing the pattern configuration of the cathode of the electroplating device so that the cathodes in different areas have different areas and/or gaps, or controlling different currents given to the cathodes in different areas, for example, providing the electric field of the bus 13e1 located in the block D1 to be smaller than the electric field of the bus 13e1 located in the block D2; providing the electric field of the bus 13e1 located in the block D1 to be smaller than the electric field of the bus 13e2 located in the block D2'. In some embodiments, the gap of the cathode 1322 or 1324 of the block D1 of the electroplating apparatus 10g is larger than the gap of the cathode 1321 of the block D2. In some embodiments, the gap of the cathode 1322 or 1324 of the block D1 of the electroplating apparatus 10g is larger than the gap of the cathode 1325 of the block D2'. In some embodiments, the gap of the cathode 1322 of the end R2 of the electroplating apparatus 10g is larger than the gap of the cathode 1321 of the non-end R1. In some embodiments, the gap of the cathode 1323 of the end R3 of the electroplating apparatus 10g is larger than the gap of the cathode 1321 of the non-end R1. In some embodiments, the gap of the cathode 1324 of the end R4 of the electroplating apparatus 10g is larger than the gap of the cathode 1325 of the non-end R5. In some embodiments, the gap of the cathode 1326 of the end R6 of the electroplating apparatus 10g is larger than the gap of the cathode 1325 of the non-end R5. In some embodiments, the electric field adjustment method may include controlling the current of the end R2 and the end R3 of the bus 13e1 to be smaller than the current of the non-end R1, or controlling the current of the end R4 and the end R6 of the bus 13e2 to be smaller than the current of the non-end R5. In this embodiment, a smaller electric field is given to the portion of the bus corresponding to the angle of the substrate 20, and a larger electric field is given to the portion of the bus away from the angle, so that the electric field (or electric flux) of the two blocks is substantially the same. In this way, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

FIG. 13 is a top view of an electroplating apparatus 10 h according to an embodiment of the present disclosure.

In some embodiments, the end R2 of the bus 13e1 does not include a cathode. In this embodiment, a smaller current density is given to a location where a relatively strong electric field is easily generated in the substrate 20, and a larger current density is given to a location where a relatively weak electric field is easily generated in the substrate 20, so that the difference in the electric field generated in the above two locations becomes smaller. In this way, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

FIG. 14 is a top view of an electroplating apparatus 10i according to an embodiment of the present disclosure.

In some embodiments, the electroplating device 10i includes a bus 13e6, a bus 13e7, and a bus 13e8. In some embodiments, the bus 13e6, the bus 13e7, and the bus 13e8 may form a quadrilateral. The bus 13e6 may be located at the corresponding block D1. The bus 13e7 may be located at the corresponding block D2. The bus 13e8 may be located at the corresponding block D2'. In some embodiments, the bus 13e6, the bus 13e7, and the bus 13e8 are electrically connected to different power supplies. In some embodiments, the bus 13e6, the bus 13e7, and the bus 13e8 are not connected to each other. In some embodiments, the method for adjusting the electric field may include: controlling the current of the block D1 to be less than the current of the block D2 or the block D2'. For example, controlling the current of the bus 13e6 to be less than the current of the bus 13e7, or controlling the current of the bus 13e6 to be less than the current of the bus 13e8. When bus 13e6, bus 13e7, and bus 13e8 are electrically connected to different power sources, the current density (or electric flux) corresponding to different areas of the substrate 20 can be controlled by providing different currents to bus 13e6, bus 13e7, and bus 13e8.

FIG. 15 is a cross-sectional view of a package structure 40 according to an embodiment of the present disclosure.

The package structure 40 may be formed by performing an electroplating process using the electroplating device 10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h or 10i to form the circuit layers 31, 32 and 33. Compared with the circuit layers 31', 32' and 33' of the package structure 40', the circuit layers 31, 32 and 33 of the package structure 40 have a smaller thickness difference and thus have a smaller standard deviation of thickness. In some embodiments, the standard deviation of the thickness of the circuit layers 31, 32 and 33 of the package structure 40 may be between about 0 and about 5%.

Spatially relative terms such as "below," "under," "below," "above," "above," "lower," "upper," "left," "right," and the like as used herein may be used herein for ease of description to describe the relationship of one component or feature to another or more components or features as shown in the accompanying drawings. Spatially relative terms are intended to cover different orientations of the device when in use or in operation in addition to the orientation depicted in the accompanying drawings. The device may be oriented in other ways (rotated 80 degrees or in other orientations), and the spatially relative descriptors used herein may be interpreted accordingly. It should be understood that when a component is referred to as being "connected to" or "coupled to" another component, the component may be directly connected to or coupled to the other component, or there may be intermediate components.

As used herein, the terms "approximately", "substantially", "substantially" and "about" are used to describe and explain small changes. When used in conjunction with an event or situation, the term can refer to an instance where the event or situation occurs precisely and an instance where the event or situation is close to occurring. As used herein with respect to a given value or a given range, the term "approximately" generally means within ±10%, ±5%, ±1% or ±0.5% of a given value or range. The range can be expressed as one endpoint to another endpoint or between two endpoints herein. All ranges disclosed herein include endpoints unless otherwise specified. The term "substantially coplanar" can refer to a position difference of two surfaces positioned along the same plane within a few microns (μm), such as a position difference positioned along the same plane within 10 μm, within 5 μm, within 1 μm or within 0.5 μm. When a numerical value or characteristic is referred to as being "substantially" the same, the term can refer to a value within ±10%, ±5%, ±1% or ±0.5% of the average value of the value.

The foregoing summarizes the features of several embodiments and detailed aspects of the present disclosure. The embodiments described in the present disclosure can be easily used as a basis for designing or modifying other processes and structures to facilitate the implementation of the same or similar purposes and/or to achieve the same or similar advantages of the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present disclosure, and various changes, substitutions and modifications may be made without departing from the spirit and scope of the present disclosure.

Claims (20)

1. An electroplating apparatus comprising:

A substrate;

an electrode fixing member disposed on the substrate;

A conductive layer disposed on the substrate and connected to the electrode fixing member through a connecting member, the conductive layer including a first bus and a second bus; and

A plurality of cathodes disposed on the first bus and the second bus,

Wherein an included angle between the first bus and the second bus corresponds to an included angle of the substrate, the first bus includes a first end portion close to the second bus and a first portion far away from the second bus, and a gap between the plurality of cathodes on the first end portion of the first bus is larger than a gap between the plurality of cathodes on the first portion.

2. The electroplating device of claim 1, wherein the first portion is a second end of the first bus opposite the first end.

3. The electroplating apparatus of claim 1, wherein the second bus line comprises a third end portion proximate to the first bus line and a second portion distal from the first bus line, wherein gaps between the plurality of cathodes on the third end portion of the second bus line are less than gaps between the plurality of cathodes on the second portion.

4. The electroplating device of claim 1, wherein the first portion is a first non-end of the first bus, the first bus further comprising a second end opposite the first end, the gaps between the plurality of cathodes on the second end of the first bus being greater than the gaps between the plurality of cathodes on the first non-end.

5. The electroplating apparatus of claim 4, wherein the second bus comprises a third end proximate the first bus, a second non-end, and a fourth end opposite the third end, wherein a gap between the plurality of cathodes on the second non-end is less than a gap between the plurality of cathodes on the third end of the second bus, and a gap between the plurality of cathodes on the second non-end is less than a gap between the plurality of cathodes on the fourth end of the second bus.

6. The electroplating device of claim 3, wherein the second portion is a fourth end of the second bus opposite the third end.

7. The electroplating apparatus of claim 2, wherein the second bus includes a third end proximate to the first bus, the gaps between the plurality of cathodes on the third end being smaller than the gaps between the plurality of cathodes on the first end.

8. The electroplating apparatus of claim 1, wherein the first end of the first bus bar does not include a cathode.

9. The electroplating apparatus of claim 1, wherein the first bus is connected to the second bus.

10. A method of manufacturing a package structure, comprising:

Providing an electroplating apparatus, comprising:

A substrate;

an electrode fixing member disposed on the substrate;

A conductive layer disposed on the substrate and connected to the electrode fixing member through a connecting member, the conductive layer including a first bus and a second bus; and

A plurality of cathodes arranged on the first bus and the second bus, wherein an included angle between the first bus and the second bus corresponds to the included angle of the substrate, and the electroplating device further comprises a cathode arranged near to the first bus and the second bus

A first block of the included angle and a second block of the included angle; and

Providing that the electric field of the first bus line located in the first block is smaller than the electric field of the first bus line located in the second block.

11. The method of claim 10, wherein the first block comprises a first end of the first bus proximate the included angle and a second end of the second bus proximate the included angle, the second block comprises a first portion of the first bus distal the included angle or a second portion of the second bus distal the included angle, and an electric field within the first block is substantially the same as an electric field of the first bus within the second block or an electric field of the second bus within the second block.

12. The method of claim 11, wherein providing an electric field of the first bus line located within the first block that is smaller than an electric field of the first bus line located within the second block comprises: the electroplating device is provided with a gap between the plurality of cathodes in the first block being larger than a gap between the plurality of cathodes in the second block.

13. The method of claim 12, wherein the second block is a third end of the first bus relative to the first end or a fourth end of the second bus relative to the second end.

14. The method of claim 12, wherein the second block is a first non-end of the first bus or a second non-end of the second bus, and the first bus further comprises a third end opposite the first end, the second bus further comprising a fourth end opposite the second end, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: the electroplating device may be configured to provide a larger gap between the plurality of cathodes on the first end and the third end of the first bus than a gap between the plurality of cathodes on the first non-end, or the electroplating device may be configured to provide a larger gap between the plurality of cathodes on the second end and the fourth end of the second bus than a gap between the plurality of cathodes on the second non-end.

15. The method of claim 12, wherein providing an electric field of the first bus line located within the first block that is smaller than an electric field of the first bus line located within the second block comprises: the electroplating apparatus is provided with gaps between the plurality of cathodes on the second end of the second bus bar being smaller than gaps between the plurality of cathodes on a fourth end of the second bus bar opposite the second end.

16. The method of claim 11, wherein providing an electric field of the first bus line located within the first block that is smaller than an electric field of the first bus line located within the second block comprises: the current of the first block is controlled to be smaller than the current of the second block.

17. The method of claim 16, wherein the second block is a third end of the first bus relative to the first end or a fourth end of the second bus relative to the second end.

18. The method of claim 11, wherein the second block is a first non-end of the first bus or a second non-end of the second bus, and the first bus further comprises a third end opposite the first end, the second bus further comprising a fourth end opposite the second end, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: the current of the first end and the third end of the first bus is controlled to be smaller than the current of the first non-end, or the current of the second end and the fourth end of the second bus is controlled to be smaller than the current of the second non-end.

19. The method of claim 12, wherein the second bus comprises a fourth end opposite the second end, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: the electroplating apparatus is provided with gaps between the plurality of cathodes on the second end of the second bus being smaller than gaps between the plurality of cathodes on the fourth end of the second bus.

20. The method of claim 10, wherein the first block comprises a first end of the first bus proximate the included angle and a second end of the second bus proximate the included angle, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: providing current to the first end of the first bus and not providing current to the second end of the second bus, or providing current to the second end of the second bus and not providing current to the first end of the first bus.