CN114914336B - Light emitting device and method for manufacturing the same - Google Patents
Light emitting device and method for manufacturing the same Download PDFInfo
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- CN114914336B CN114914336B CN202110185360.3A CN202110185360A CN114914336B CN 114914336 B CN114914336 B CN 114914336B CN 202110185360 A CN202110185360 A CN 202110185360A CN 114914336 B CN114914336 B CN 114914336B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
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Abstract
本申请涉及半导体技术领域，具体公开了一种发光器件及其制造方法，该发光器件包括衬底以及以外延生长方式叠层形成于衬底上的多层外延层，在发光器件内设置有多个人工微坑，人工微坑以衬底和/或多层外延层中的至少一外延层为中止层，并延伸至后续形成于中止层上的后续外延层内，其中人工微坑在平行于衬底的第一参考平面上的第一横截面形状呈非正六边形或正六边形设置。通过上述方式，使人工微坑的形状和尺寸灵活可控，进而实现优化人工微坑的空穴注入效果。
The present application relates to the field of semiconductor technology, and specifically discloses a light-emitting device and a manufacturing method thereof, wherein the light-emitting device comprises a substrate and a plurality of epitaxial layers formed on the substrate by epitaxial growth, wherein a plurality of artificial micro-pits are arranged in the light-emitting device, wherein the artificial micro-pits use at least one epitaxial layer in the substrate and/or the plurality of epitaxial layers as a stop layer, and extend to a subsequent epitaxial layer subsequently formed on the stop layer, wherein the first cross-sectional shape of the artificial micro-pit on a first reference plane parallel to the substrate is a non-regular hexagon or a regular hexagon. By the above method, the shape and size of the artificial micro-pits are flexibly controllable, thereby achieving the optimization of the hole injection effect of the artificial micro-pits.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a light-emitting device and a manufacturing method thereof.
Background
Light Emitting Diodes (LEDs) are a type of optoelectronic device that converts electrical energy into light energy and are widely used in the fields of lighting, backlighting, display, and the like. At present, the electro-optic conversion efficiency (WPE) of the LED of the third-generation semiconductor nitride can still reach more than 60% at the level of dislocation density of 10 9/cm2. The main explanation for this phenomenon is that the Multiple Quantum Well (MQW) of the V-shaped pit (Pits) is thinner than the MQW thickness of the mesa region and has a lower In content therein, and thus has a wider forbidden band, and can form a potential barrier In the vicinity of the dislocation to prevent carriers from being trapped.
During the long-term development, the inventor of the present application found that the principle of the naturally formed V-shaped pits is that the superlattice growth layer has a lower temperature and the nitride (such as GaN) has a poorer lateral epitaxy capability, and the threading dislocation can form the V-shaped pits. The growth position of the naturally formed V-shaped pits is limited, and the growth mode of each V-shaped pit is limited to surround dislocation growth, so that the space positions of the V-shaped pits are determined by the dislocations and are basically randomly distributed, the optimization of the hole injection effect of the V-shaped pits cannot be realized under the condition of the influence of the dislocations, the control difficulty of the shape and the size of the V-shaped pits is high, the risk of leakage current is increased, and the reliability of the light emitting device is influenced.
Therefore, there is a need to design an artificial micro-pit with flexible and controllable shape and size.
Disclosure of Invention
The application aims to provide a light-emitting device and a manufacturing method thereof, which enable the shape and the size of an artificial micro-pit to be flexible and controllable, and further realize the optimization of the hole injection effect of the artificial micro-pit.
In one aspect, the application provides a light emitting device, the light emitting device includes a substrate and a plurality of epitaxial layers formed on the substrate in a stacked manner by epitaxial growth, a plurality of artificial micro-pits are provided in the light emitting device, the artificial micro-pits take at least one epitaxial layer of the substrate and/or the plurality of epitaxial layers as a stop layer and extend into a subsequent epitaxial layer formed on the stop layer, wherein the artificial micro-pits are arranged in a non-regular hexagon or a regular hexagon in a first cross-sectional shape on a first reference plane parallel to the substrate.
In another aspect, the application provides a method of fabricating a light emitting device, the method comprising providing a substrate, taking the substrate and/or at least one epitaxial layer on the substrate as a stop layer, and forming an initial micro-pit in the stop layer, and continuing to grow a subsequent epitaxial layer on the stop layer, such that the subsequent epitaxial layer epitaxially grows under the induction of the initial micro-pit to form an induced micro-pit in the subsequent epitaxial layer, wherein the initial micro-pit forms an opening on a surface of the stop layer facing the subsequent epitaxial layer, the opening having a non-regular hexagon or regular hexagon in a first cross-sectional shape parallel to a first reference plane of the substrate, and the opening being sized such that the cross-sectional shape of the induced micro-pit in the first reference plane parallel to the substrate coincides with the cross-sectional shape of the opening in the first reference plane parallel to the substrate.
In yet another aspect, the application provides a method of fabricating a light emitting device, the method comprising providing a substrate, stacking a plurality of epitaxial layers on the substrate in an epitaxial growth manner, taking at least one epitaxial layer of the substrate and/or the plurality of epitaxial layers as a stop layer, and etching the subsequent epitaxial layer from a side of the subsequent epitaxial layer formed on the stop layer away from the substrate to form a plurality of artificial micro-pits, wherein the artificial micro-pits are arranged in a non-regular hexagon or a regular hexagon in a first cross-sectional shape on a first reference plane parallel to the substrate.
The application has the beneficial effects that the artificial micro-pit is characterized in that at least one epitaxial layer in the substrate and/or the multi-layer epitaxial layers is taken as a stopping layer and extends into a subsequent epitaxial layer formed on the stopping layer, namely, the application can break through the limiting factor of the existing artificial V-shaped pit, and any substrate and/or epitaxial layer is selected as the stopping layer of the artificial micro-pit, therefore, the space position of the artificial micro-pit is not simply determined by dislocation, the shape of the first cross section of the artificial micro-pit extending into the subsequent epitaxial layer formed on the stopping layer on the first reference plane parallel to the substrate is a non-regular hexagon or a regular hexagon, namely, the shape of the artificial micro-pit is not limited to be a hexagonal pyramid, and the shape and the size of the artificial micro-pit are flexibly controllable, thereby realizing the hole injection effect of optimizing the artificial micro-pit.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:
fig. 1 is a schematic structural view of a light emitting device provided in a first embodiment of the present application;
Fig. 2 is a schematic structural view of a light emitting device according to a second embodiment of the present application;
fig. 3 is a schematic structural view of a light emitting device according to a third embodiment of the present application;
Fig. 4 is a schematic structural view of a light emitting device provided in a fourth embodiment of the present application;
Fig. 5 is a schematic structural view of a light emitting device provided in a fifth embodiment of the present application;
fig. 6 is a flowchart of a method for manufacturing a light emitting device according to a sixth embodiment of the present application;
fig. 7 is a flowchart of a method for manufacturing a light emitting device according to a seventh embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
As shown in fig. 1 to 5, an embodiment of the present application provides a light emitting device 100, the light emitting device 100 including a substrate 101 and a plurality of epitaxial layers. Wherein a plurality of epitaxial layers are stacked on the substrate 101 by epitaxial growth.
A plurality of artificial micro-pits are provided in the light emitting device 100, the artificial micro-pits take at least one epitaxial layer of the substrate 101 and/or the multi-layer epitaxial layer as a stop layer, and extend into a subsequent epitaxial layer subsequently formed on the stop layer, wherein the artificial micro-pits are provided in a non-regular hexagon or a regular hexagon in a first cross-sectional shape on a first reference plane parallel to the substrate 101.
Specifically, the material of the substrate 101 includes, but is not limited to, at least one of sapphire, si, siC, gaN, znO, inP, gaAs.
The multi-layered epitaxial layer may include a first conductive type semiconductor layer 103 (e.g., an N-type GaN layer 103), a quantum well active layer 105 (e.g., a multi-quantum well active (MQW) layer 105 or a superlattice quantum well active layer), and a second conductive type semiconductor layer 107 (e.g., a P-type GaN layer 107) sequentially stacked on the substrate 101.
Further, the material system of the quantum well active layer 105 includes Al x1Iny1Gaz1Nx2Py2Asz2, wherein 0.ltoreq.x1 or y1 or z1 or x2 or y2 or z 2.ltoreq.1, optionally x1+y1+z1=1, x2+y2+z2=1.
Further, the multi-layered epitaxial layer may include a buffer layer 102, a first conductive type semiconductor layer 103, a pre-well preparation layer 104, a quantum well active layer 105, an electron blocking layer 106, a second conductive type semiconductor layer 107, or a second conductive type heavily doped semiconductor layer, which are sequentially stacked on the substrate 101.
The artificial micro pits may take at least one of the first conductive type semiconductor layer 103, the quantum well active layer 105, and the second conductive type semiconductor layer 107 and/or the substrate 101 as a stop layer and extend into a subsequent epitaxial layer subsequently formed on the stop layer.
For example, the artificial micro pit uses the first conductive type semiconductor layer 103 as a stop layer and extends into the quantum well active layer 105 and the second conductive type semiconductor layer 107 which are subsequently formed on the first conductive type semiconductor layer 103.
For another example, the artificial micro pit uses the first conductive type semiconductor layer 103 as a stop layer and extends into the quantum well active layer 105 subsequently formed on the first conductive type semiconductor layer 103, and at this time, uses the quantum well active layer 105 as a stop layer and extends into the second conductive type semiconductor layer 107 subsequently formed on the quantum well active layer 105.
For another example, the artificial micro-pit uses the substrate 101 as a stop layer and extends into the first conductivity type semiconductor layer 103, the quantum well active layer 105, and the second conductivity type semiconductor layer 107 which are subsequently formed on the substrate 101.
For another example, the artificial micro pit uses the substrate 101 as a stop layer and extends into the first conductive type semiconductor layer 103 subsequently formed on the substrate 101, and uses the first conductive type semiconductor layer 103 as a stop layer and extends into the quantum well active layer 105 subsequently formed on the first conductive type semiconductor layer 103 and into the second conductive type semiconductor layer 107.
For another example, the artificial micro pit uses the substrate 101 as a stop layer and extends into the first conductive type semiconductor layer 103 subsequently formed on the substrate 101, uses the first conductive type semiconductor layer 103 as a stop layer and extends into the quantum well active layer 105 subsequently formed on the first conductive type semiconductor layer 103, uses the quantum well active layer 105 as a stop layer and extends into the second conductive type semiconductor layer 107 subsequently formed on the quantum well active layer 105.
Compared with the prior art, the artificial micro-pit takes at least one epitaxial layer in the substrate 101 and/or the multi-layer epitaxial layer as a stop layer and extends to the subsequent epitaxial layer formed on the stop layer, namely, the application can break through the limiting factor of the existing artificial V-shaped pit, and any substrate 101 and/or epitaxial layer is selected as the stop layer of the artificial micro-pit, therefore, the space position of the artificial micro-pit is not simply determined by dislocation, the first cross section of the artificial micro-pit extending to the subsequent epitaxial layer formed on the stop layer on the first reference plane parallel to the substrate 101 is in a non-regular hexagon or regular hexagon, namely, the shape of the artificial micro-pit is not limited to a six-pyramid shape, the shape and the size of the artificial micro-pit are flexible and controllable, and the hole injection effect of the artificial micro-pit is optimized. The first cross-sectional shape of the artificial micro-pit on the first reference plane parallel to the substrate 101 in the embodiment of the present application is annular, and may be specifically circular, elliptical or polygonal, and the first cross-sectional shape has asymmetry or symmetry with respect to the central axis. In other embodiments, the first cross-sectional shape of the artificial micro-pits in a first reference plane parallel to the substrate 101 may also be other custom patterns.
Further, the second cross-sectional shape of the artificial micro-pit on the second reference plane perpendicular to the substrate 101 according to the embodiment of the present application may include two sidewalls 12, 13 and a bottom wall 11, where the two sidewalls 12, 13 are disposed opposite to each other and the bottom wall 11 connects the two sidewalls 12, 13, and the second cross-sectional shape may be non-tapered. It should be noted that, the bottom wall 11 is located in the stop layer, the subsequent epitaxial layer further covers the two side walls 12, 13 and the bottom wall 11, and the holes injected by the two side walls 12, 13 can be transmitted to not only the quantum well active layer 105 grown in the platform area around the artificial micro-pit, but also the quantum well active layer 105 grown at the bottom wall 11, so as to realize electron-hole recombination luminescence of the quantum well active layer 105 at the bottom wall 11, and exert the function of lateral current injection of the two side walls 12, 13 to be larger, reduce the luminescence area loss, and enhance the light output.
It should be noted that, since the adsorption capacity of the side walls 12, 13 for the reactant is weaker than that of the bottom wall 11, the width of the bottom wall 11 is set such that the total film thickness of the subsequent epitaxial layer on the bottom wall 11 is greater than that of the subsequent epitaxial layer on the side walls 12, 13.
Further, the width of the bottom wall 11 is further set so that the ratio between the total film thickness of the subsequent epitaxial layer on the bottom wall 11 and the total film thickness of the subsequent epitaxial layer on the land area around the artificial micro-pit is 0.8-1. It can be understood that by controlling the ratio relationship between the two, a light emitting device with the thickness of the total film layer of the subsequent epitaxial layer on the bottom wall 11 consistent with or inconsistent with the thickness of the total film layer of the subsequent epitaxial layer on the land area of the periphery of the artificial micro-pit can be obtained.
In one embodiment, the artificial micropits are further divided into an initial micropit and an induced micropit, the initial micropit is artificially formed in the stop layer, and the induced micropit is formed in the subsequent epitaxial layer by the epitaxial growth of the subsequent epitaxial layer under the induction of the initial micropit. Wherein the starting micro-pit forms an opening on a surface of the stopping layer facing the subsequent epitaxial layer, the opening of the starting micro-pit is arranged in a non-regular or regular hexagonal shape in cross section on a first reference plane parallel to the substrate 101, and the opening of the starting micro-pit is sized such that the cross section of the induced micro-pit formed in the subsequent epitaxial layer during epitaxial growth on the first reference plane parallel to the substrate 101 is consistent with the cross section of the opening on the first reference plane parallel to the substrate 101.
In one embodiment, the artificial micro-pits are formed by etching the subsequent epitaxial layer from a side of the subsequent epitaxial layer facing away from the substrate 101.
Specifically, the initial pit is formed by performing an etching process on the subsequent epitaxial layer from the side of the subsequent epitaxial layer formed on the stop layer facing away from the substrate 101, and epitaxially growing an induced pit surrounding the initial pit under the induction action of the initial pit. Unlike V-shaped pits defined as inverted hexagonal pyramid-shaped pits in the prior art, the shape and size of the artificial micro pits in the embodiment of the present application are flexibly controllable, specifically, the cross-sectional shape of the induced micro pits on the first reference plane parallel to the substrate 101 and the cross-sectional shape of the opening on the first reference plane parallel to the substrate 101 may be non-regular hexagon or regular hexagon, and the cross-sectional shape of the induced micro pits on the first reference plane parallel to the substrate 101 and the cross-sectional shape of the opening on the first reference plane parallel to the substrate 101 are consistent.
As shown in fig. 1, the opening width w of the starting pit is the maximum distance in the line connecting any two points at the edge of the cross-sectional shape of the opening of the starting pit. The opening width w of the initial micro-pit is 1 nm-10 μm, alternatively, the opening width w of the initial micro-pit can be 1 nm-15 nm, 15 nm-100 nm, 100 nm-500 nm, 500 nm-1000 nm, 1 μm-5 μm, 5 μm-10 μm, for example, the opening width w of the initial micro-pit can be 1nm, 15nm, 20nm, 100nm, 500nm, 600nm, 750nm, 1000nm, 2 μm, 5 μm,10 μm.
As shown in fig. 1, the pit depth d of the starting pit is the vertical distance from a point on the starting pit at which the distance from the main surface of the substrate 101, which is remote from the epitaxial layer, is shortest to the main surface of the stopping layer, which is remote from the substrate 101. Wherein, the pit depth d of the initial micro-pit is 1 nm-10 μm, alternatively, the pit depth d of the initial micro-pit can be 1 nm-15 nm, 15 nm-100 nm, 100 nm-500 nm, 500 nm-1000 nm, 1 μm-5 μm, 5 μm-10 μm, for example, the pit depth d of the initial micro-pit can be 1nm, 15nm, 20nm, 100nm, 500nm, 600nm, 750nm, 1000nm, 2 μm, 5 μm, 10 μm.
Based on the growth principle of the naturally occurring V-shaped pit, the larger the pit depth of the naturally occurring V-shaped pit is, the larger the opening width thereof is required, i.e., the pit depth of the naturally occurring V-shaped pit is positively correlated with the opening width of the naturally occurring V-shaped pit, and therefore, the pit depth of the naturally occurring V-shaped pit is limited by the size of the light emitting device 100. Unlike the prior art, the pit depth d of the initial pit in the embodiment of the present application depends on the position of the stop layer and has no correlation with the opening width w of the initial pit. Optionally, the ratio between the pit depth d of the initial pit and the opening width w of the initial pit is 1:10-100:1, such as 1:10, 1:5, 1:1, 5:1, 10:1, 50:1, 100:1.
In an embodiment, the second cross-sectional shape of the artificial micro-pit on a second reference plane perpendicular to the substrate 101 has two sidewalls 12, 13 opposite to each other, the light emitting device 100 has a mesa region at the periphery of the artificial micro-pit, and the subsequent epitaxial layer is formed at least in the mesa region, wherein the film composition of the sidewalls 12, 13 on the side of the stop layer facing the subsequent epitaxial layer is different from the film composition of the subsequent epitaxial layer in the mesa region. The film layer composition of the side walls 12 and 13 on the side of the termination layer facing the subsequent epitaxial layer is different from that of the subsequent epitaxial layer in the platform region, so that the purpose of flexibly regulating and controlling the energy band structures of the side walls 12 and 13 is realized, the hole injection path is optimized, the hole injection barrier height is further reduced, the efficiency and uniformity of transverse current injection of the side walls 12 and 13 are improved, and the luminous efficiency is improved.
As shown in fig. 1, in an embodiment, the second cross-sectional shape of the artificial micro-pit on a second reference plane perpendicular to the substrate 101 has two sidewalls 12, 13 opposite to each other, and an intersection angle α between at least one sidewall 12, 13 and the substrate 101 is different from an intersection angle between a naturally grown crystal plane of a subsequent epitaxial layer and the substrate 101. Wherein the intersection angle alpha ranges from 15 degrees to 90 degrees.
Wherein the natural growth habit of the natural growth crystal plane is different from that of the subsequent epitaxial layer artificially grown in the embodiment of the present application, and therefore, the intersection angle α between the sidewalls 12, 13 associated with the subsequent epitaxial layer and the substrate 101 is different from that between the natural growth crystal plane of the subsequent epitaxial layer and the substrate 101.
By the method, the natural growth habit of the crystal is changed, the intersection angle between the side walls 12 and 13 of the second cross section shape of the artificial micro-pits on the second reference plane perpendicular to the substrate 101 and the substrate 101 is flexibly controllable, the second cross section shapes of different shapes are further obtained, the artificial micro-pits with smaller duty ratio can be obtained by increasing the angle value of the intersection angle alpha, the light emitting area loss of the epitaxial layer caused by forming the artificial micro-pits is reduced, and the light output is increased.
As shown in fig. 6, an embodiment of the present application also provides a method for manufacturing the light emitting device 100 of the above embodiment, the method including:
S101, providing a substrate 101.
Specifically, the material of the substrate 101 includes, but is not limited to, at least one of sapphire, si, siC, gaN, znO, inP, gaAs.
S102, taking the substrate 101 and/or at least one epitaxial layer on the substrate 101 as a stop layer, and forming an initial micro pit on the stop layer.
And S103, continuing to grow a subsequent epitaxial layer on the stopping layer so that an induced micro pit is formed in the subsequent epitaxial layer by epitaxial growth of the subsequent epitaxial layer under the induction action of the initial micro pit, wherein the initial micro pit forms an opening on the surface of one side of the stopping layer facing the subsequent epitaxial layer, the opening is arranged in a non-regular hexagon or a regular hexagon on a first cross section shape parallel to a first reference plane of the substrate 101, and the size of the opening is set so that the cross section shape of the induced micro pit on the first reference plane parallel to the substrate 101 is consistent with the cross section shape of the opening on the first reference plane parallel to the substrate 101.
Specifically, when the substrate 101 is used as a stop layer, an initial pit is prepared on the substrate 101 which is not subjected to epitaxial growth by an etching process, and the subsequent first conductivity type semiconductor layer 103, quantum well active layer 105 and second conductivity type semiconductor layer 107 are continuously grown on the substrate 101 on which the initial pit is formed, at this time, an induced pit is formed in the epitaxial layer along with epitaxial growth of the epitaxial layer under the induction action of the initial pit, and the opening of the initial pit and the cross-sectional shape of the induced pit on a first reference plane parallel to the substrate 101 are all arranged in a non-regular hexagon or a regular hexagon.
Or when the first conductive type semiconductor layer 103 is taken as a stop layer, after the first conductive type semiconductor layer 103 is epitaxially grown on the substrate 101, the epitaxy is interrupted, an initial micro pit is prepared on the first conductive type semiconductor layer 103 through an etching process, and the subsequent quantum well active layer 105 and the second conductive type semiconductor layer 107 are continuously grown on the first conductive type semiconductor layer 103 formed with the initial micro pit, at this time, an induced micro pit is formed in the quantum well active layer 105 and the second conductive type semiconductor layer 107 along with the epitaxial growth of the epitaxial layer under the induction action of the initial micro pit, and the opening of the initial micro pit and the cross-sectional shape of the induced micro pit on a first reference plane parallel to the substrate 101 are all arranged in a non-regular hexagon or a regular hexagon.
Or when the quantum well active layer 105 is taken as a stop layer, after the first conductive type semiconductor layer 103 and the quantum well active layer 105 are sequentially epitaxially grown on the substrate 101, the epitaxy is interrupted, an initial micro-pit is prepared on the quantum well active layer 105 through an etching process, and a subsequent second conductive type semiconductor layer 107 is continuously grown on the quantum well active layer 105 formed with the initial micro-pit, at this time, an induced micro-pit is formed in the second conductive type semiconductor layer 107 along with the epitaxial growth of the epitaxial layer under the induction action of the initial micro-pit, and the opening of the initial micro-pit and the cross section shape of the induced micro-pit on a first reference plane parallel to the substrate 101 are all arranged in a non-regular hexagon or a regular hexagon.
Or when the substrate 101 and the first conductive type semiconductor layer 103 are taken as stop layers, after the first conductive type semiconductor layer 103 is epitaxially grown on the substrate 101, the epitaxy is interrupted, an initial micro pit is prepared on the substrate 101 and the first conductive type semiconductor layer 103 through an etching process, and the subsequent quantum well active layer 105 and the second conductive type semiconductor layer 107 are continuously grown on the side of the first conductive type semiconductor layer 103, which is far away from the substrate 101, where the initial micro pit is formed, under the induction action of the initial micro pit, along with the epitaxial growth of the epitaxial layers, an induction micro pit is formed in the quantum well active layer 105 and the second conductive type semiconductor layer 107, and the opening of the initial micro pit and the cross section shape of the induction micro pit on a first reference plane parallel to the substrate 101 are both in a non-regular hexagon or are both in a regular hexagon.
Compared with the prior art, the artificial micro-pit manufactured by the manufacturing method provided by the application takes at least one epitaxial layer in the substrate 101 and/or the multi-layer epitaxial layer as a stop layer and extends into a subsequent epitaxial layer formed on the stop layer, namely, the application can break through the limiting factor of the existing artificial V-shaped pit, and any substrate 101 and/or epitaxial layer is selected as the stop layer of the artificial micro-pit, so that the space position of the artificial micro-pit is not simply determined by dislocation, and the shape of the first cross section of the artificial micro-pit extending into the subsequent epitaxial layer formed on the stop layer on a first reference plane parallel to the substrate 101 is in a non-regular hexagon or a regular hexagon, namely, the shape of the artificial micro-pit is not limited to a hexagonal pyramid any more, and the shape and the size of the artificial micro-pit are flexibly controllable, thereby realizing the hole injection effect of the optimized artificial micro-pit.
As shown in fig. 7, an embodiment of the present application also provides a method for manufacturing the light emitting device 100 of the above embodiment, the method including:
S201, a substrate 101 is provided.
Specifically, the material of the substrate 101 includes, but is not limited to, at least one of sapphire, si, siC, gaN, znO, inP, gaAs.
S202, a plurality of epitaxial layers are stacked and formed on the substrate 101 by epitaxial growth.
The first conductive type semiconductor layer 103 and the quantum well active layer 105 are stacked epitaxially on the substrate 101, or the first conductive type semiconductor layer 103, the quantum well active layer 105, and the second conductive type semiconductor layer 107 are stacked epitaxially on the substrate 101.
More specifically, a buffer layer 102, a first conductivity type semiconductor layer 103, a pre-well preparation layer 104, a quantum well active layer 105, and/or a superlattice quantum well active layer 105, an electron blocking layer 106, a second conductivity type semiconductor layer 107, and/or a second conductivity type heavily doped semiconductor layer are formed on a substrate 101 in an epitaxial growth manner. The stop layer may be at least two consecutive stacks of the buffer layer 102, the first conductivity type semiconductor layer 103, the pre-well preparation layer 104, the quantum well active layer 105, the superlattice quantum well active layer 105, the electron blocking layer 106, the second conductivity type semiconductor layer 107, and the second conductivity type heavily doped semiconductor layer.
And S203, taking the substrate 101 and/or at least one epitaxial layer in the plurality of epitaxial layers as a stop layer.
And S204, etching the subsequent epitaxial layer from the side, away from the substrate 101, of the subsequent epitaxial layer formed on the stopping layer to form a plurality of artificial micro pits, wherein the artificial micro pits are arranged in a non-regular hexagon or a regular hexagon in a first cross-sectional shape on a first reference plane parallel to the substrate 101.
Specifically, when the substrate 101 is used as a stop layer, the second conductivity-type semiconductor layer 107, the quantum well active layer 105, and the first conductivity-type semiconductor layer 103 are etched from a side of the second conductivity-type semiconductor layer 107 facing away from the substrate 101 to form a plurality of artificial micro pits, wherein the artificial micro pits are arranged in a non-regular hexagon or a regular hexagon in a first cross-sectional shape on a first reference plane parallel to the substrate 101.
Or when the first conductive type semiconductor layer 103 is used as a stop layer, etching the second conductive type semiconductor layer 107 and the quantum well active layer 105 from a side of the second conductive type semiconductor layer 107 facing away from the substrate 101 to form a plurality of artificial micro pits, wherein the artificial micro pits are arranged in a non-regular hexagon or a regular hexagon in a first cross-sectional shape on a first reference plane parallel to the substrate 101.
Or when the quantum well active layer 105 is used as a stop layer, the second conductive type semiconductor layer 107 is etched from a side of the second conductive type semiconductor layer 107 facing away from the substrate 101 to form a plurality of artificial micro-pits, wherein the artificial micro-pits are arranged in a non-regular hexagon or a regular hexagon in a first cross-sectional shape on a first reference plane parallel to the substrate 101.
Further, a mask layer may be deposited on the stop layer and patterned to obtain a mask pattern. The mask layer can be organic photoresist, non-metal compound such as SiO 2、Si3N4, or metal layer, and the deposition method includes but is not limited to chemical vapor deposition, physical vapor deposition, electrochemical deposition, and the patterning method includes but is not limited to dry etching, wet etching, and stripping. The non-mask region is etched using the mask pattern to form a plurality of artificial micro-pits. Wherein, the etching rate, angle, anisotropy and the like can be adjusted by changing the process parameters, and further the depth, the section shape and the angles of the side walls 12 and 13 of the artificial micro pits can be controlled.
Compared with the prior art, the artificial micro-pit manufactured by the manufacturing method provided by the application takes at least one epitaxial layer in the substrate 101 and/or the multi-layer epitaxial layer as a stop layer and extends into a subsequent epitaxial layer formed on the stop layer, namely, the application can break through the limiting factor of the existing artificial V-shaped pit, and any substrate 101 and/or epitaxial layer is selected as the stop layer of the artificial micro-pit, so that the space position of the artificial micro-pit is not simply determined by dislocation, the artificial micro-pit extending into the subsequent epitaxial layer formed on the stop layer is arranged in a non-regular hexagon or regular hexagon shape on a first cross section parallel to a first reference plane of the substrate 101, namely, the shape of the artificial micro-pit is not limited to a hexagonal cone, the shape and the size of the artificial micro-pit are flexible and controllable, and the hole injection effect of the artificial micro-pit is optimized.
Specific embodiments of the present application will be described in detail below with reference to the accompanying drawings and the technical scheme.
Example 1
As shown in fig. 1, the light emitting device 100 includes a substrate 101, a buffer layer 102 and an N-type GaN layer 103 sequentially stacked on the substrate 101 by epitaxial growth. An N-type GaN layer 103 is used as a stop layer, an initial micro-pit is formed on the N-type GaN layer 103 by using an etching process, a subsequent pre-well preparation layer 104, an MQW layer 105, an electron blocking layer 106 and a P-type GaN layer 107 are sequentially grown on the N-type GaN layer 103 formed with the initial micro-pit, an induced micro-pit formed in the subsequent epitaxial layer is epitaxially grown under the induction action of the initial micro-pit, and the cross-sectional shapes of the induced micro-pit and the opening of the initial micro-pit on a first reference plane parallel to the substrate 101 are consistent and may be non-regular hexagon. The initial micro-pits and the induced micro-pits constitute artificial micro-pits of the light emitting device 100, wherein the bottom wall 11 of the artificial micro-pits is located in the N-type GaN layer 103, and the bottom wall 11 of the artificial micro-pits is parallel to a main surface of the substrate 101 on a side close to the buffer layer 102.
Example 2
As shown in fig. 2, the light emitting device 100 includes a substrate 101, a buffer layer 102 and an N-type GaN layer 103 sequentially stacked on the substrate 101 by epitaxial growth. An N-type GaN layer 103 is used as a stop layer, an initial micro-pit is formed on the N-type GaN layer 103 by using an etching process, a subsequent pre-well preparation layer 104, an MQW layer 105, an electron blocking layer 106 and a P-type GaN layer 107 are sequentially grown on the N-type GaN layer 103 formed with the initial micro-pit, an induced micro-pit formed in the subsequent epitaxial layer is epitaxially grown under the induction action of the initial micro-pit, and the cross-sectional shapes of the induced micro-pit and the opening of the initial micro-pit on a first reference plane parallel to the substrate 101 are consistent and may be non-regular hexagon. The initial micro-pits and the induced micro-pits constitute artificial micro-pits of the light emitting device 100, wherein a bottom wall 11 of the artificial micro-pits is located within the N-type GaN layer 103, and the bottom wall 11 of the artificial micro-pits includes a first plane and a second plane that are angled to each other.
Example 3
As shown in fig. 3, the light emitting device 100 includes a substrate 101, a buffer layer 102 and an N-type GaN layer 103 sequentially stacked on the substrate 101 by epitaxial growth. An N-type GaN layer 103 is used as a stop layer, an initial micro-pit is formed on the N-type GaN layer 103 by using an etching process, a subsequent pre-well preparation layer 104, an MQW layer 105, an electron blocking layer 106 and a P-type GaN layer 107 are sequentially grown on the N-type GaN layer 103 formed with the initial micro-pit, an induced micro-pit formed in the subsequent epitaxial layer is epitaxially grown under the induction action of the initial micro-pit, and the cross-sectional shapes of the induced micro-pit and the opening of the initial micro-pit on a first reference plane parallel to the substrate 101 are consistent and may be non-regular hexagon. The initial pit and the induced pit constitute an artificial pit of the light emitting device 100, wherein a bottom wall 11 of the artificial pit is located in the N-type GaN layer 103, and the bottom wall 11 of the artificial pit is a curved surface.
Example 4
As shown in fig. 4, the light emitting device 100 includes a substrate 101, and a buffer layer 102, an N-type GaN layer 103, and a pre-well preparation layer 104, which are sequentially stacked on the substrate 101 by epitaxial growth. With the pre-well preparation layer 104 as an stopping layer, an initial micro-pit is formed on the pre-well preparation layer 104 by using an etching process, wherein a custom epitaxial layer 108 is formed on a side of the initial micro-pit away from the substrate 101, and the custom epitaxial layer 108 is made of a material with carrier transmission capability. Further, the subsequent MQW layer 105, the electron blocking layer 106, and the P-type GaN layer 107 are sequentially grown on the side of the pre-well preparation layer 104 and the custom epitaxial layer 108, which are far from the substrate 101, where the initial micro-pits are formed, and the subsequent epitaxial layer is epitaxially grown under the induction action of the initial micro-pits to form induced micro-pits in the subsequent epitaxial layer, and the cross-sectional shapes of the induced micro-pits and the openings of the initial micro-pits on the first reference plane parallel to the substrate 101 are uniform and may be non-regular hexagons. The initial micro-pits and the induced micro-pits constitute artificial micro-pits of the light emitting device 100, wherein the bottom wall 11 of the artificial micro-pits is located in the pre-well preparation layer 104, and the bottom wall 11 of the artificial micro-pits is parallel to the main surface of the substrate 101 on the side close to the buffer layer 102.
Example 5
As shown in fig. 5, the light emitting device 100 includes a substrate 101, and a buffer layer 102, an N-type GaN layer 103, a pre-well preparation layer 104, and a multiple quantum well active (MQW) layer 105 composed of a plurality of potential wells, which are sequentially stacked on the substrate 101 by epitaxial growth. With the MQW layer 105 as a stop layer, an initial micro-pit is formed on the MQW layer 105 by using an etching process, wherein a custom epitaxial layer 108 is formed on a side of the initial micro-pit away from the substrate 101, and the custom epitaxial layer 108 is made of a material with an electron transport capability. Further, the subsequent induced micro-pits formed in the subsequent epitaxial layer by the epitaxial growth of the remaining MQW layer 105, electron blocking layer 106, and P-type GaN layer 107 under the induction of the initial micro-pits continue to grow in sequence on the side of the substrate 101 remote from the MQW layer 105 and custom epitaxial layer 108 where the initial micro-pits are formed, and the cross-sectional shapes of the induced micro-pits and the openings of the initial micro-pits on the first reference plane parallel to the substrate 101 are uniform and may be non-regular hexagons. The initiation and induction micropits constitute artificial micropits of the light emitting device 100, wherein the bottom wall 11 of the artificial micropits is located within the MQW layer 105, the bottom wall 11 of the artificial micropits being parallel to the main surface of the substrate 101 on the side close to the buffer layer 102.
The artificial micro-pit of the application takes at least one epitaxial layer in the substrate and/or the multi-layer epitaxial layer as a stop layer and extends into a subsequent epitaxial layer formed on the stop layer, namely the application can break through the limiting factor of the existing artificial V-shaped pit and select any substrate and/or epitaxial layer as the stop layer of the artificial micro-pit, therefore, the space position of the artificial micro-pit is not simply determined by dislocation, the first cross section of the artificial micro-pit extending into the subsequent epitaxial layer formed on the stopping layer on the first reference plane parallel to the substrate is in a non-regular hexagon or regular hexagon, namely, the shape of the artificial micro-pit is not limited to a hexagonal pyramid, the shape and the size of the artificial micro-pit are flexible and controllable, and the hole injection effect of the artificial micro-pit is optimized.
The foregoing is only the embodiments of the present application, and therefore, the patent scope of the application is not limited thereto, and all equivalent structures or equivalent processes using the descriptions of the present application and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the application.
Claims (11)
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| CN107068818A (en) * | 2017-04-27 | 2017-08-18 | 南昌大学 | A kind of AlInGaN bases are green, Yellow light emitting diode epitaxial structure |
| CN209993614U (en) * | 2019-06-17 | 2020-01-24 | 南昌大学 | AlInGaN-based light emitting diode |
| CN112259650A (en) * | 2020-09-10 | 2021-01-22 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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| CN107068818A (en) * | 2017-04-27 | 2017-08-18 | 南昌大学 | A kind of AlInGaN bases are green, Yellow light emitting diode epitaxial structure |
| CN209993614U (en) * | 2019-06-17 | 2020-01-24 | 南昌大学 | AlInGaN-based light emitting diode |
| CN112259650A (en) * | 2020-09-10 | 2021-01-22 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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