CN114899268B - Silicon photomultiplier tube and photoelectric devices - Google Patents

Abstract

The present invention provides a silicon photomultiplier tube, which can be used in the field of photoelectric detection technology. The silicon photomultiplier tube includes: a substrate, which is composed of P-type low-resistance silicon; an epitaxial layer, which is formed on the surface of the substrate, and the epitaxial layer is composed of p-type high-resistance silicon; a plurality of N ⁺⁺ doped regions and a plurality of P ⁺⁺ doped regions, which are regularly distributed in the epitaxial layer, each N ⁺⁺ doped region and the epitaxial layer form a PN junction, and the N ⁺⁺ doped region and the P ⁺⁺ doped region are in a columnar structure along the direction perpendicular to the substrate; a positive electrode, which is formed in each P ⁺⁺ doped region; a negative electrode, which is formed in each N ⁺⁺ doped region; an anti-reflection layer, which is formed on the surface of the epitaxial layer, wherein the anti-reflection layer is not formed in the region corresponding to the positive electrode and the negative electrode; a quenching resistor, which is formed on the surface of the anti-reflection layer and connected to the negative electrode. The photomultiplier tube can increase the volume of the depletion region, thereby improving the detection efficiency of photons without increasing the operating voltage. The problem that the efficiency and voltage of traditional silicon photomultiplier tubes cannot be taken into account at the same time is solved.

Description

Silicon photomultiplier tube and photoelectric devices

Technical Field

The present disclosure relates to the technical field of photoelectric detectors, and in particular to a silicon photomultiplier tube and a photoelectric device.

Background technique

Silicon photomultiplier tube (SiPM) is a single-photon detector with photon number resolution capability. It is composed of a series of avalanche photodiode (APD) micro-units working in Geiger mode in parallel. Compared with traditional photomultiplier tube (PMT), SiPM works in a non-vacuum environment and is therefore not easily damaged. SiPM is small in size, unaffected by magnetic fields, has low power consumption, and has strong single-photon resolution capability. These advantages have made SiPM gradually replace PMT and become a single-photon detector with broad development prospects. It has been widely used in astrophysics, high-energy physics, lidar, nuclear medicine imaging, etc.

However, since silicon is an indirect bandgap material, it absorbs light weakly, especially near-infrared light, which makes the photon detection efficiency of SiPM low. To improve the photon detection efficiency of SiPM, a thicker absorption layer is required, which inevitably increases the operating voltage and usage cost.

Summary of the invention

In view of the above technical problems, the present disclosure provides a silicon photomultiplier tube on one hand, including: a substrate, composed of P-type low-resistance silicon; an epitaxial layer, formed on the surface of the substrate, the epitaxial layer is composed of p-type high-resistance silicon; a plurality of N ⁺⁺ doped regions and a plurality of P ⁺⁺ doped regions, regularly distributed in the epitaxial layer, each N ⁺⁺ doped region and the epitaxial layer form a PN junction, and along the direction perpendicular to the substrate, the N ⁺⁺ doped region and the P ⁺⁺ doped region are in a columnar structure; a positive electrode, formed in each P ⁺⁺ doped region; a negative electrode, formed in each N ⁺⁺ doped region; an anti-reflection layer, formed on the surface of the epitaxial layer, wherein the anti-reflection layer is not formed in the region corresponding to the positive electrode and the negative electrode; a quenching resistor, formed on the surface of the anti-reflection layer and connected to the negative electrode.

According to an embodiment of the present disclosure, the P ⁺⁺ doped regions are periodically distributed in the epitaxial layer in a polygonal honeycomb shape, and the N ⁺⁺ doped region is located at the center of the polygon.

According to an embodiment of the present disclosure, the N ⁺⁺ doped regions are periodically distributed in the epitaxial layer in a polygonal honeycomb shape, and the P ⁺⁺ doped region is located at the center of the polygon.

According to an embodiment of the present disclosure, the polygon is a regular hexagon.

According to an embodiment of the present disclosure, the N ⁺⁺ doping region and the P ⁺⁺ doping region have a depth of 6-46 μm and a diameter of 2-10 μm.

According to an embodiment of the present disclosure, the distance between the N ⁺⁺ doping region and the P ⁺⁺ doping region is 8-20 μm.

According to an embodiment of the present disclosure, the doping concentration of the N ⁺⁺ doping region and the P ⁺⁺ doping region is in the range of 10 ¹⁶ -10 ²⁰ cm ^-3 .

According to an embodiment of the present disclosure, the number of PN junctions is 10 ² -10 ⁶ .

According to an embodiment of the present disclosure, along a direction perpendicular to the substrate, the positive electrode and the negative electrode have a columnar structure.

According to an embodiment of the present disclosure, the positive electrode is located at the center of the P ⁺⁺ doping region, and the negative electrode is located at the center of the N ⁺⁺ doping region.

According to an embodiment of the present disclosure, the silicon photomultiplier tube also includes a bias common electrode, a branch electrode and a ground common electrode; all positive electrodes are connected together through the branch electrodes and then connected to the bias common electrode, and the negative electrodes of each column are connected together through the branch electrodes and then connected to the quenching resistor, and the quenching resistor is connected to the ground common electrode.

According to an embodiment of the present disclosure, the positive electrode and the negative electrode have a diameter of 1-2 μm and a depth of 5-45 μm, the branch electrode has a width of 1-3 μm, and the bias common electrode and the ground common electrode have a width of 100-300 μm.

According to an embodiment of the present disclosure, the substrate is a heavily doped P-type low-resistance silicon substrate, and the epitaxial layer is a lightly doped P-type high-resistance silicon epitaxial layer.

According to an embodiment of the present disclosure, the resistivity of the substrate is 0.001-10Ω.cm, and the resistivity of the epitaxial layer is 10-1000Ω.cm.

According to an embodiment of the present disclosure, the thickness of the substrate is 0.1-1 mm, and the thickness of the epitaxial layer is 10-50 μm.

According to an embodiment of the present disclosure, the material of the anti-reflection layer is silicon oxide, and the thickness is 100-200 nm.

Another aspect of the present disclosure provides an optoelectronic device, including the above-mentioned silicon photomultiplier tube, wherein the silicon photomultiplier tube is used to detect photons, and the optoelectronic device is applied to near-infrared laser radar and near-infrared brain function imaging.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

FIG1 schematically shows a cross-sectional view of a silicon photomultiplier tube structure according to an embodiment of the present disclosure.

FIG. 2 schematically shows a top view of a silicon photomultiplier tube structure according to another embodiment of the present disclosure.

FIG. 3 schematically shows a top view of a silicon photomultiplier tube structure according to yet another embodiment of the present disclosure.

FIG. 4 schematically shows a flow chart of a method for preparing a silicon photomultiplier tube according to an embodiment of the present disclosure.

FIG. 5 schematically shows a structural diagram corresponding to each process step in the method for preparing a silicon photomultiplier tube according to an embodiment of the present disclosure.

FIG. 6 schematically shows a working principle diagram of a silicon photomultiplier tube according to an embodiment of the present disclosure.

FIG. 7 schematically shows a cross-sectional view of a single vertical columnar PN junction of a silicon photomultiplier tube according to an embodiment of the present disclosure.

[Description of Reference Numerals]

1-substrate, 2-epitaxial layer, 3-N ⁺⁺ doped region, 4-P ⁺⁺ doped region, 5-positive electrode, 6-negative electrode, 7-reflective layer, 8-quenching resistor, 9-bias common electrode, 10-branch electrode, 11-ground common electrode.

Detailed ways

In order to make the purpose, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present disclosure.

The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "include", "comprising", etc. used herein indicate the existence of the features, steps, operations and/or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

In the description of the present disclosure, it should be understood that the terms "longitudinal", "length", "circumferential", "front", "rear", "left", "right", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the subsystem or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.

Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present disclosure. The shapes, sizes, and positional relationships of the components in the drawings do not reflect the actual size, proportion, and actual positional relationship. In addition, in the present disclosure, any reference symbol between brackets should not be constructed as a limitation to the present disclosure.

Similarly, in order to simplify the present disclosure and help understand one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present disclosure, the various features of the present disclosure are sometimes grouped together into a single embodiment, figure, or description thereof. The description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the feature. In the description of the present disclosure, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

In view of the low photon detection efficiency of existing SiPMs, especially the low efficiency in the near-infrared band, the present disclosure provides a silicon photomultiplier tube, which is based on a PN junction with a vertical columnar structure and can achieve high photon detection efficiency at a low operating voltage. The following is a detailed introduction with reference to the accompanying drawings.

FIG1 schematically shows a cross-sectional view of a silicon photomultiplier tube structure according to an embodiment of the present disclosure.

As shown in FIG. 1 , the silicon photomultiplier tube may include, for example:

The substrate 1 may be made of P-type low-resistance silicon, wherein the substrate 1 may be, for example, a heavily doped P-type low-resistance silicon substrate.

The epitaxial layer 2 is formed on the surface of the substrate 1. The epitaxial layer 2 may be composed of p-type high-resistance silicon. The epitaxial layer 2 may be, for example, a lightly doped p-type high-resistance silicon epitaxial layer.

Multiple N ⁺⁺ doped regions 3 and multiple P ⁺⁺ doped regions 4 are regularly distributed in the epitaxial layer 2. Each N ⁺⁺ doped region 3 and the epitaxial layer 2 can form a PN junction, and then multiple N ⁺⁺ doped regions 3 and the epitaxial layer 2 can form multiple PN junctions. Along the direction perpendicular to the substrate 1 (the vertical direction shown in Figure 1), the N ⁺⁺ doped region 3 and the P ⁺⁺ doped region 4 can be in a columnar structure.

The positive electrode 5 is formed in each P ⁺⁺ doping region 4 , that is, one positive electrode 5 is disposed in each P ⁺⁺ doping region 4 .

The negative electrode 6 is formed in each N ⁺⁺ doping region 3 , that is, one negative electrode 6 is disposed in each N ⁺⁺ doping region 3 .

The anti-reflection layer 7 is formed on the surface of the epitaxial layer 2 , wherein the anti-reflection layer 7 is not formed in the region corresponding to the positive electrode 5 and the negative electrode 6 .

The quenching resistor 8 is formed on the surface of the anti-reflection layer 7 and connected to the negative electrode 6 .

According to the silicon photomultiplier tube provided in this embodiment, by introducing a vertical columnar PN junction composed of a vertically structured N ⁺⁺ doped region and an epitaxial layer in the epitaxial layer, a three-dimensional depletion region is formed at the P-/N++ interface under the action of reverse bias, which increases the volume of the depletion region compared to the traditional planar structure PN junction, thereby improving the detection efficiency of photons without increasing the operating voltage. The problem that the efficiency and voltage of traditional silicon photomultiplier tubes cannot be taken into account at the same time is solved. Furthermore, by setting an anti-reflection layer to reduce the reflection of incident light, the detection efficiency of photons is further improved.

FIG. 2 schematically shows a top view of a silicon photomultiplier tube structure according to another embodiment of the present disclosure.

As shown in FIG2 , the silicon photomultiplier tube of this embodiment further designs the structures of the N ⁺⁺ doping region 3 and the P++ doping region 4 on the basis of the silicon photomultiplier tube shown in FIG1 . The distribution of the N ⁺⁺ doping region 3 and the P ⁺⁺ doping region 4 of this embodiment can be, for example, that the P ⁺⁺ doping region 4 is periodically distributed in the epitaxial layer 2 in a polygonal honeycomb shape, and ^{the N++ doping} region 3 is located at the center of the polygon.

FIG. 3 schematically shows a top view of a silicon photomultiplier tube structure according to yet another embodiment of the present disclosure.

As shown in FIG3 , the distribution of the N ⁺⁺ doping region 3 and the P ⁺⁺ doping region 4 of the present embodiment is different from the distribution of the N ⁺⁺ doping region 3 and the P ⁺⁺ doping region 4 shown in FIG2 in that the relative positions of the N ⁺⁺ doping region 3 and the P ⁺⁺ doping region 4 can be swapped. For example, the N ⁺⁺ doping region 3 can be periodically distributed in the epitaxial layer 2 in a polygonal honeycomb shape, and the P ⁺⁺ doping region 4 is located at the center of the polygon.

Preferably, the polygon may be a regular polygon, for example, an equilateral triangle, a square, a regular pentagon, a regular hexagon, etc. An embodiment of the present disclosure is set to a regular hexagon.

The polygonal honeycomb-shaped periodically arranged N ⁺⁺ doping regions 3 and P ⁺⁺ doping regions 4 provided in the embodiment of the present disclosure can further enhance the absorption of incident light by the PN junction, thereby improving the detection efficiency of photons.

1 to 3 , in another embodiment of the present disclosure, the silicon photomultiplier tube may further include a bias common electrode 9 , branch electrodes 10 and a ground common electrode 11 .

All positive electrodes 5 are connected together through branch electrodes 10 and then connected to the bias common electrode 9 . The negative electrodes 6 in each column are connected together through branch electrodes 10 and then connected to the quenching resistor 8 . The quenching resistor 8 is connected to the ground common electrode 11 .

Based on this electrode structure, the quenching resistor 8 and all negative electrodes 6 can be directly grounded to GND through the ground common electrode 11 , and a bias voltage V can be applied to all positive electrodes 5 through the bias common electrode 9 .

Further, in another embodiment of the present disclosure, the shape of the electrode can be consistent with the shape of the doped region, that is, the positive electrode 5 and the negative electrode 6 are in a columnar structure along the direction perpendicular to the substrate 1. The positive electrode 5 is located at the center of the P ⁺⁺ doped region 4, and the negative electrode 6 is located at the center of the N ⁺⁺ doped region 3.

According to the embodiments of the present disclosure, the electrode is arranged in a columnar structure and is arranged at the center of the doping region, which can improve the detection efficiency of the silicon photomultiplier tube and the detection speed.

Furthermore, in yet another embodiment of the present disclosure, the material type, dimensional parameters or physical parameters of each structure of the silicon photomultiplier tube described in the aforementioned embodiments are reasonably designed.

Preferably, the depth of the N ⁺⁺ doping region 3 and the P ⁺⁺ doping region 4 may be, for example, 6-46 μm, and the diameter may be, for example, 2-10 μm. The distance between the N ⁺⁺ doping region 3 and the P ⁺⁺ doping region 4 may be, for example, 8-20 μm. The doping concentration of the N ⁺⁺ doping region 3 and the P ⁺⁺ doping region 4 ranges from 10 ¹⁶ to ^{10 20} cm ^-3 .

Preferably, the number of PN junctions may be, for example, 10 ² -10 ⁶ .

Preferably, the positive electrode 5 and the negative electrode 6 may have a diameter of 1-2 μm and a depth of 5-45 μm, the branch electrode 10 may have a width of 1-3 μm, and the bias common electrode 9 and the ground common electrode 11 may have a width of 100-300 μm.

Preferably, the thickness of the substrate 1 may be, for example, 0.1-1 mm, and the thickness of the epitaxial layer 2 may be, for example, 10-50 μm.

Preferably, the material of the anti-reflection layer 7 may be, for example, silicon oxide, and the thickness may be, for example, 100-200 nm.

It should be noted that the material type, size parameters or physical parameters of each structure are not set arbitrarily, but are optimized designs based on the structure. The detection efficiency of the silicon photomultiplier tube is further improved by optimizing the material, structural parameters or physical parameters of each structure.

Based on the silicon photomultiplier tube described in the above embodiments, the present disclosure also provides an optoelectronic device, which includes the silicon photomultiplier tube described in any of the above embodiments. The optoelectronic device can be applied to near-infrared laser radar and near-infrared brain function imaging.

In yet another embodiment of the present disclosure, a preparation method is provided for preparing the silicon photomultiplier tube described in the above embodiment.

Fig. 4 schematically shows a flow chart of a method for preparing a silicon photomultiplier tube according to an embodiment of the present disclosure. Fig. 5 schematically shows a structural diagram corresponding to each process step in a method for preparing a silicon photomultiplier tube according to an embodiment of the present disclosure.

As shown in FIG. 4 and FIG. 5 , the preparation method may include, for example, operations S401 to S411 .

In operation S401 , an epitaxial layer is epitaxially grown on a substrate.

In this embodiment, the material of the substrate 1 may be, for example, P ⁺⁺ silicon, and P-doped silicon may be epitaxially grown as the epitaxial layer 2, and the prepared structure is shown in a of FIG5 . The resistivity of the substrate 1 is, for example, 0.001Ω.cm, and the resistivity of the epitaxial layer 2 is, for example, 100Ω.cm.

In operation S402 , an anti-reflection layer is grown on the epitaxial layer.

In this embodiment, the anti-reflection layer 7 can be obtained by growing silicon oxide on the epitaxial layer 2. The prepared structure is shown in b of Figure 5. The thickness of the anti-reflection layer 7 can be, for example, 160 nm, and the growth method can be, for example, plasma enhanced chemical vapor deposition (PECVD).

In operation S403 , a portion of the anti-reflection layer and the epitaxial layer are etched away.

In this embodiment, a photolithography or etching process can be used to etch away part of the anti-reflection layer 7 and the epitaxial layer 2 to form a first deep groove pointing from the anti-reflection layer 7 to the epitaxial layer 2. The first deep groove can be columnar, and the number can be multiple, and the first deep groove can be regularly distributed in the anti-reflection layer 7 and the epitaxial layer 2. The prepared structure is shown in c in Figure 5. The depth of the first deep groove etching can be, for example, 26 μm, and the diameter can be, for example, 3 μm.

In operation S404 , an N ⁺⁺ doped region is formed in the first deep trench.

In this embodiment, the N++ doped region 3 can be formed in the first deep trench of the epitaxial layer by thermal diffusion. The prepared structure is shown in d of FIG5 .

In operation S405 , a silicon oxide layer is deposited in the first deep trench.

In this embodiment, the silicon oxide layer in the first deep trench is used to protect the N ⁺⁺ doped region 3 in the subsequent preparation process. The prepared structure is shown in FIG5e.

In operation S406 , a portion of the anti-reflection layer and the epitaxial layer are etched away.

In this embodiment, a photolithography or etching process can be used to etch away part of the anti-reflection layer 7 and the epitaxial layer 2 to form a second deep groove pointing along the anti-reflection layer 7 to the epitaxial layer 2. The second deep groove can be columnar, and the number can be multiple, regularly distributed in the anti-reflection layer 7 and the epitaxial layer 2 and honeycomb distributed around the first groove. The prepared structure is shown in f in Figure 5. The depth of the second deep groove etching can be, for example, 26μm, and the diameter can be, for example, 3μm. The number of the first groove can be, for example, 100 rows, 100 in each row, and the distance between the first groove and the second groove can be, for example, 10μm.

In operation S407 , an N ⁺⁺ doped region is formed in the second deep trench.

In this embodiment, a P ⁺⁺ doped region 4 may be formed in the second deep trench of the epitaxial layer by thermal diffusion. The prepared structure is shown in g of FIG5 .

In operation S408, the silicon oxide layer in the first deep trench is etched.

In this embodiment, the prepared structure is shown in h of FIG. 5 .

In operation S409 , metal is deposited in all the first grooves and the second grooves and annealed to form ohmic contacts, thereby obtaining positive electrodes and negative electrodes.

In this embodiment, the positive electrode 5 is formed in the P ⁺⁺ doping region 4, and the negative electrode 6 is formed in the N ⁺⁺ doping region 3. The prepared structure is shown in FIG5 i.

In operation S410, a quenching resistor is prepared on a surface of the anti-reflection layer.

In this embodiment, a polysilicon quenching resistor can be prepared, and the quenching resistor 8 can be connected to the negative electrode 6. The prepared structure is shown in j in Figure 5. The resistance of the quenching resistor 8 can be, for example, 400 kΩ.

In operation S411, a bias common electrode, branch electrodes, and a ground common electrode are prepared.

In this embodiment, all positive electrodes 5 can be connected together through branch electrodes 10 and then connected to the bias common electrode 9, and each row of negative electrodes 6 can be connected together through branch electrodes 10 and then connected to the quenching resistor 8, and the quenching resistor 8 is connected to the ground common electrode 11. The prepared structure is shown in k in Figure 5.

This completes the preparation of the photomultiplier tube.

Fig. 6 schematically shows a working principle diagram of a silicon photomultiplier tube according to an embodiment of the present disclosure. Fig. 7 schematically shows a cross-sectional view of a single vertical columnar PN junction of a silicon photomultiplier tube according to an embodiment of the present disclosure.

As shown in Figures 6 and 7, SiPM includes multiple units, each unit has a common positive electrode (anode) and a negative electrode (cathode), and each unit includes a vertical columnar (three-dimensional) PN junction and a quenching resistor. Under the action of reverse bias, a three-dimensional depletion region will be formed at the P-/N++ interface. Compared with the traditional planar structure PN junction, this three-dimensional vertical columnar PN junction increases the volume of the depletion region, thereby improving the photon detection efficiency without increasing the operating voltage. The results show that this three-dimensional structure PN junction can increase the photon detection efficiency by more than 3 times compared with the planar structure PN junction.

In summary, the photomultiplier tube of the embodiment of the present disclosure increases the volume of the depletion region under the action of reverse bias by introducing a vertical columnar PN to increase the absorption of incident light, thereby improving the photon detection efficiency, while not increasing the operating voltage, solving the problem that the efficiency and voltage of the planar structure PN junction cannot be taken into account at the same time. Furthermore, by setting the N ⁺⁺ doping area 3 and the P ⁺⁺ doping area 4 to be arranged periodically in a polygonal honeycomb shape, the absorption of the incident light by the PN junction can be improved, thereby improving the detection efficiency of photons. Setting the electrode in a columnar structure and setting it at the center of the doping area can improve the detection efficiency of the silicon photomultiplier tube to be higher and the detection speed to be faster. Furthermore, by setting an anti-reflection layer to reduce the reflection of the incident light, the detection efficiency of the photons is further improved. In addition, by reasonably designing the material type, dimensional parameters or physical parameters of each structure of the silicon photomultiplier tube, the detection efficiency of the silicon photomultiplier tube can be further improved.

The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above description is only a specific embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims (17)

1. A silicon photomultiplier tube, comprising: A substrate (1) composed of P-type low-resistance silicon; An epitaxial layer (2) is formed on the surface of the substrate (1), and the epitaxial layer (2) is composed of p-type high-resistance silicon; A plurality of N ⁺⁺ doped regions (3) and a plurality of P ⁺⁺ doped regions (4) are regularly distributed in the epitaxial layer (2), each N ⁺⁺ doped region (3) and the epitaxial layer (2) forming a PN junction, and along a direction perpendicular to the substrate (1), the N ⁺⁺ doped regions (3) and the P ⁺⁺ doped regions (4) present a columnar structure; wherein the P ⁺⁺ doped regions (4) are periodically distributed in the epitaxial layer (2) in a polygonal honeycomb shape, or the N ⁺⁺ doped regions (3) are periodically distributed in the epitaxial layer (2) in a polygonal honeycomb shape; A positive electrode (5) formed in each of the P ⁺⁺ doped regions (4); A negative electrode (6) formed in each of the N ⁺⁺ doped regions (3); an anti-reflection layer (7) formed on the surface of the epitaxial layer (2), wherein the anti-reflection layer (7) is not formed in the region corresponding to the positive electrode (5) and the negative electrode (6); A quenching resistor (8) is formed on the surface of the anti-reflection layer (7) and is connected to the negative electrode (6). 2. The silicon photomultiplier tube according to claim 1, characterized in that, when the P ⁺⁺ doped region (4) is periodically distributed in the epitaxial layer (2) in a polygonal honeycomb shape, the N ⁺⁺ doped region (3) is located at the center of the polygon. 3. The silicon photomultiplier tube according to claim 1, characterized in that, when the N ⁺⁺ doped region (3) is periodically distributed in the epitaxial layer (2) in a polygonal honeycomb shape, the P ⁺⁺ doped region (4) is located at the center of the polygon. 4 . The silicon photomultiplier tube according to claim 2 , wherein the polygon is a regular hexagon. 5. The silicon photomultiplier tube according to any one of claims 1 to 3, characterized in that the N ⁺⁺ doped region (3) and the P ⁺⁺ doped region (4) have a depth of 6-46 μm and a diameter of 2-10 μm. 6. The silicon photomultiplier tube according to any one of claims 1 to 3, characterized in that the distance between the N ⁺⁺ doped region (3) and the P ⁺⁺ doped region (4) is 8-20 μm. 7. The silicon photomultiplier tube according to any one of claims 1 to 3, characterized in that the doping concentration of the N ⁺⁺ doping region (3) and the P ⁺⁺ doping region (4) is in ^the range of ^1016-1020 cm ^-3 . 8 . The silicon photomultiplier tube according to claim 1 , wherein the number of the PN junctions is 10 ² -10 ⁶ . 9. The silicon photomultiplier tube according to claim 1, characterized in that, along a direction perpendicular to the substrate (1), the positive electrode (5) and the negative electrode (6) are in a columnar structure. 10. The silicon photomultiplier tube according to claim 9, characterized in that the positive electrode (5) is located at the center of the P ⁺⁺ doped region (4), and the negative electrode (6) is located at the center of the N ⁺⁺ doped region (3). 11. The silicon photomultiplier tube according to claim 9, characterized in that the silicon photomultiplier tube further comprises a bias common electrode (9), a branch electrode (10) and a ground common electrode (11); All the positive electrodes (5) are connected together through branch electrodes (10) and then connected to the bias common electrode (9); the negative electrodes (6) in each column are connected together through branch electrodes (10) and then connected to the quenching resistor (8); and the quenching resistor (8) is connected to the ground common electrode (11). 12. The silicon photomultiplier tube according to claim 11, characterized in that the diameter of the positive electrode (5) and the negative electrode (6) is 1-2 μm, the depth is 5-45 μm, the width of the branch electrode (10) is 1-3 μm, and the width of the bias common electrode (9) and the ground common electrode (11) is 100-300 μm. 13. The silicon photomultiplier tube according to claim 1, characterized in that the substrate (1) is a heavily doped P-type low-resistance silicon substrate, and the epitaxial layer (2) is a lightly doped p-type high-resistance silicon epitaxial layer. 14. The silicon photomultiplier tube according to claim 1, characterized in that the resistivity of the substrate (1) is 0.001-10Ω.cm, and the resistivity of the epitaxial layer (2) is 10-1000Ω.cm. 15. The silicon photomultiplier tube according to claim 1, characterized in that the thickness of the substrate (1) is 0.1-1 mm, and the thickness of the epitaxial layer (2) is 10-50 μm. 16. The silicon photomultiplier tube according to claim 1, characterized in that the anti-reflection layer (7) is made of silicon oxide and has a thickness of 100-200 nm. 17. An optoelectronic device, comprising the silicon photomultiplier tube according to any one of claims 1 to 16, wherein the silicon photomultiplier tube is used to detect photons, and the optoelectronic device is applied to near-infrared laser radar and near-infrared brain function imaging.