CN114895492A - Quantum dot diffusion plate and preparation method thereof - Google Patents
Quantum dot diffusion plate and preparation method thereof Download PDFInfo
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- CN114895492A CN114895492A CN202210164831.7A CN202210164831A CN114895492A CN 114895492 A CN114895492 A CN 114895492A CN 202210164831 A CN202210164831 A CN 202210164831A CN 114895492 A CN114895492 A CN 114895492A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 131
- 238000009792 diffusion process Methods 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 64
- 239000002994 raw material Substances 0.000 claims abstract description 59
- 239000011241 protective layer Substances 0.000 claims abstract description 38
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000004033 plastic Substances 0.000 claims abstract description 17
- 229920003023 plastic Polymers 0.000 claims abstract description 17
- 229910052500 inorganic mineral Inorganic materials 0.000 claims abstract description 11
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052919 magnesium silicate Inorganic materials 0.000 claims abstract description 11
- 235000019792 magnesium silicate Nutrition 0.000 claims abstract description 11
- 239000000391 magnesium silicate Substances 0.000 claims abstract description 11
- 239000011707 mineral Substances 0.000 claims abstract description 11
- 239000003921 oil Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000003381 stabilizer Substances 0.000 claims abstract description 11
- 229920003048 styrene butadiene rubber Polymers 0.000 claims abstract description 11
- 239000002270 dispersing agent Substances 0.000 claims abstract description 10
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 10
- 238000001125 extrusion Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 4
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- 235000010215 titanium dioxide Nutrition 0.000 description 17
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
- B29D11/00798—Producing diffusers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C08J5/18—Manufacture of films or sheets
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- G—PHYSICS
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- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
- G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
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- G—PHYSICS
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- G02B5/0268—Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- C08J2333/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
- C08J2333/06—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
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- C08J2425/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
- C08J2425/02—Homopolymers or copolymers of hydrocarbons
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
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Abstract
The invention discloses a quantum dot diffusion plate which comprises a quantum dot layer, wherein protective layers are covered on the upper surface and the lower surface of the quantum dot layer; the quantum dot layer comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer, 0.1-6% of magnesium silicate mineral, 0.01-1% of quantum dot and 0.2-5% of titanium dioxide; the protective layer comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer and 0.1-6% of magnesium silicate mineral. The invention provides a quantum dot diffusion plate which has a high-brightness effect and accordingly reduces the overall cost of a backlight module. The invention also provides a preparation method of the quantum dot diffusion plate.
Description
Technical Field
The invention relates to the technical field of light diffusion plates, in particular to a quantum dot diffusion plate and a preparation method thereof.
Background
The light diffusion plate is characterized in that through chemical or physical means, when light meets two media with different refractive indexes in the traveling path, the physical phenomena of refraction, reflection and scattering are generated, inorganic or organic light diffusants are added into base materials such as PMMA, PC, PS, PP and the like, or the light is artificially adjusted through array arrangement of micro-feature structures on the surface of the base materials, so that the light is refracted, reflected and scattered in different directions, the traveling path of the light is changed, the effect of optical diffusion is generated by filling and dispersing colors of incident light, and the light diffusion plate is widely applied to liquid crystal display, LED illumination and imaging display systems.
For a backlight module applied to a TV in the market at present, due to continuous improvement of the requirement of backlight uniformity in the industry, the haze of a diffusion plate is made higher, but the transmittance of the diffusion plate is reduced while high haze is realized, the diffused brightness is lost, and thus the backlight module needs to add more lamp beads or films to improve the brightness, and finally the overall cost of the backlight module is increased.
Disclosure of Invention
The invention aims to provide a quantum dot diffusion plate and a preparation method thereof, which have the effect of high brightness, so that the overall cost of a backlight module is reduced.
The invention discloses a quantum dot diffusion plate and a preparation method thereof, and the technical scheme is as follows:
a quantum dot diffusion plate is characterized by comprising a quantum dot layer, wherein protective layers are covered on the upper surface and the lower surface of the quantum dot layer;
the quantum dot layer comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer, 0.1-6% of magnesium silicate mineral, 0.01-1% of quantum dot and 0.2-5% of titanium dioxide;
the protective layer comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer and 0.1-6% of magnesium silicate mineral.
Preferably, the particle size of the quantum dots is 2-12 nm.
Preferably, the quantum dot layer number is at least one layer.
Preferably, the plastic raw materials of the quantum dot layer and the protective layer are one or more of ps, pc, pmma or ms.
As a preferred scheme, PS heat-resistant agents are added to the raw materials of the quantum dot layer and the protective layer, and the PS heat-resistant agents comprise the following components in percentage by mass: 0.1 to 3 percent.
A method for preparing a quantum dot diffusion plate according to claim 1, comprising the steps of:
preparing two parts of protective layer raw materials with the same components and one part of raw materials of the quantum dot layer;
respectively and uniformly mixing the protective layer raw material and the quantum dot layer raw material;
respectively adding the mixed raw materials of the protective layer and the quantum dot layer into screw extrusion equipment for heating to form a molten state;
and finally, extruding the materials through a die head of screw extrusion equipment, and extruding the protective layer raw material and the quantum dot layer raw material in a sheet-shaped mode, wherein the protective layer covers the surface of the quantum dot layer.
Preferably, the screw extrusion device comprises three sections of heating zones, wherein the first section temperature of the heating zone is 140-.
Preferably, the temperature control range of the die extrusion is 140-220 ℃.
As the preferred scheme, the screw extrusion equipment is provided with a plurality of feed inlets, and the screw extrusion equipment is suitable for putting various different raw materials into the screw extrusion equipment.
The quantum dot diffusion plate disclosed by the invention has the beneficial effects that: the upper surface and the lower surface of the quantum dot layer are covered with the protective layer, and the protective layer is also made of plastic raw materials, inorganic diffusant and other materials, so that the protective layer has the function of light diffusion, and meanwhile, the quantum dot layer can be protected, water and oxygen are prevented from entering the quantum dot layer, and the quantum dots in the quantum dot layer are prevented from losing efficacy; and quantum dot layer adopts quantum dot, titanium white powder and other materials are constituteed, through increasing titanium white powder, make the titanium element in the titanium white powder promote the diffusion effect of quantum dot diffuser plate, to the conversion of being strained partial light in original backlight, the utilization ratio of being shaded has been improved, and through the regulation to titanium and quantum dot raw materials component, can realize the change of the interior quantum dot spectrum of diffuser plate, thereby can match different backlight strip, the applicable flexibility ratio of quantum dot diffuser plate has been strengthened greatly, simultaneously through improving luminance, also reduce the holistic cost of backlight unit.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot diffusion plate according to the present invention.
FIG. 2 is a spectrum diagram of a conventional diffuser plate module.
FIG. 3 is a spectrum of a quantum dot diffuser module.
FIG. 4 is a spectrum diagram of an LCD.
FIG. 5 is a process flow diagram of the method for preparing a quantum dot diffusion plate according to the present invention.
Detailed Description
The invention will be further elucidated and described with reference to a specific embodiment and the drawings of the specification:
referring to fig. 1, a quantum dot diffusion plate includes a quantum dot layer 10, wherein the upper surface and the lower surface of the quantum dot layer 10 are covered with a protection layer 20.
The quantum dot layer 10 comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer, 0.1-6% of magnesium silicate mineral, 0.01-1% of quantum dot and 0.2-5% of titanium dioxide.
The protective layer 20 comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer and 0.1-6% of magnesium silicate mineral.
The upper and lower surfaces of the quantum dot layer 10 are covered with the protective layer 20, and the protective layer 20 is also made of plastic raw materials, inorganic diffusing agents and other materials, so that the protective layer 20 has a light diffusing function, and can protect the quantum dot layer 10, thereby preventing water and oxygen from entering the quantum dot layer 10 and avoiding the quantum dots in the quantum dot layer 10 from failing.
And quantum dot layer 10 adopts quantum dot, titanium white powder and other materials are constituteed, through increasing titanium white powder, make the titanium element in the titanium white powder promote the diffusion effect of quantum dot diffuser plate, to the conversion of being strained partial light in original backlight, the utilization ratio of being shaded has been improved, and through the regulation to titanium and quantum dot raw materials component, can realize the change of the interior quantum dot spectrum of diffuser plate, thereby can match different backlight lamp strips, the applicable flexibility ratio of quantum dot diffuser plate has been strengthened greatly, simultaneously through improving luminance, also reduce the holistic cost of backlight unit.
In the scheme, the particle size of the quantum dots is 2-12nm, and the quantum dots and the titanium dioxide can be uniformly mixed together by adopting the smaller quantum dots, so that the diffusion effect of the quantum dot diffusion plate is better improved. The quantum dot layer 10 is at least one layer, and in the actual production process, the quantum dot layer 10 can be increased according to the requirements of different specifications, or the quantum dot layer 10 can be combined with other functional layers for use.
The plastic materials of the quantum dot layer 10 and the protective layer 20 are one or more combinations of ps, pc, pma or ms. And PS heat-resistant agents are added into the raw materials of the quantum dot layer 10 and the protective layer 20, and the PS heat-resistant agents comprise the following components in percentage by mass: 0.1 to 3 percent. The heat resistance of the quantum dot diffusion plate main body is improved by adding the PS heat-resistant agent, and the phenomenon that the quantum dot diffusion plate is deformed due to overhigh temperature when the LED lamp irradiates in the using process is avoided.
In the quantum dot diffusion plate of example 1, the respective formulations of each layer are: the quantum dot layer comprises the following raw materials in percentage by mass: 90% of plastic raw material, 0.5% of stabilizer, 1% of organic silicon, 2% of inorganic diffusant, 1% of diffusion oil, 0.5% of styrene-butadiene copolymer, 2% of magnesium silicate mineral, 0.5% of quantum dot and 2.5% of titanium dioxide;
the protective layer comprises the following raw materials in percentage by mass: 93% of plastic raw material, 0.5% of stabilizing agent, 1% of organic silicon, 2% of inorganic dispersing agent, 1% of dispersing oil, 0.5% of styrene-butadiene copolymer and 2% of magnesium silicate mineral.
The existing common diffuser plate comprises the following components in percentage by mass: 93% of plastic raw material, 0.5% of stabilizing agent, 1% of organic silicon, 2% of inorganic dispersing agent, 1% of dispersing oil, 0.5% of styrene-butadiene copolymer and 2% of magnesium silicate mineral.
The quantum dot diffuser plate and the ordinary diffuser plate of embodiment 1 are all set up at the LED module: conditions of 55inch/1 × 24 lamps: correctly assembling and placing the backlight source, turning on a power switch, checking if no errors exist, preheating for 30min, placing the plate in a fixed test area which is arranged above the backlight source and in the center and below the BEF, measuring by using a corrected luminance meter, and recording luminance color coordinates (x, y) and luminance Lv data, wherein the measured values are as follows in the following table 1:
table 1: data table of five different positions of common diffusion plate and quantum dot diffusion plate
Table 2: quantum dot diffusion plate and common diffusion plate five-position numerical value improvement
| Position a/A | Position B/B | Position C/C | Position D/D | Position E/E | Average | |
| Color point X | 7%↑ | 7%↑ | 7%↑ | 8%↑ | 7%↑ | 7%↑ |
| Color point Y | 13%↑ | 13%↑ | 14%↑ | 13%↑ | 13%↑ | 13%↑ |
| |
10%↑ | 12%↑ | 11%↑ | 8%↑ | 10%↑ | 10%↑ |
| Color analyzer | 6%↑ | 6%↑ | 6%↑ | 6%↑ | 6%↑ | 6%↑ |
The five positions sampled by the quantum dot diffusion plate and the common diffusion plate are all located at the same position of the plate, namely four corners corresponding to the plate and focus positions of four corner cross connecting lines.
Referring to fig. 2, 3 and 4, fig. 2 is a spectrum diagram of a conventional diffuser plate, and fig. 3 is a spectrum diagram of a quantum dot diffuser plate, as is apparent from a comparison between fig. 2 and 3, in fig. 3, there are three peaks which are absorbed by quantum dots in a yellow region and converted into red light, thereby producing a better light emitting effect, while the spectrum of the conventional diffuser plate in the yellow region is absorbed, resulting in a low light utilization rate. And fig. 4 is a spectrogram of the quantum dot diffusion plate installed on the liquid crystal display screen, and in combination with fig. 3, it can be seen that the quantum dot diffusion plate can have better color performance on the liquid crystal display screen.
The backlight spectrum data of the quantum dot diffusion plate are as follows:
the blue light wave crest is 450nm, and the half-peak width is 430-450 nm, which is not much different from that of the common backlight;
the green light wave crest is 530nm, and the half-peak width is 520-550 nm;
the half-peak width of the red light peak at 630nm is 610-640 nm.
Therefore, the brightness LV of the quantum dot diffuser plate is improved by about 10% and the color gamut is improved by about 6% compared with the brightness LV of the common diffuser plate.
Referring to fig. 5, a method for manufacturing the quantum dot diffusion plate includes the following steps:
preparing two parts of protective layer raw materials with the same components and one part of raw materials of the quantum dot layer;
respectively and uniformly mixing the protective layer raw material and the quantum dot layer raw material;
respectively adding the mixed raw materials of the protective layer and the quantum dot layer into screw extrusion equipment for heating to form a molten state;
and finally, extruding the raw materials through a die head of screw extrusion equipment, extruding the raw materials of the protective layer and the quantum dot layer in a sheet mode, and covering the surface of the quantum dot layer with the protective layer.
By utilizing the characteristics of in-situ growth of the quantum dot material and combining the manufacturing method of quantum dot diffusion plate extrusion, the titanium dioxide is directly added into the raw materials, so that the titanium dioxide and the quantum dot layer can be uniformly mixed in the subsequent mixing and heating melting processes of the titanium dioxide, and the titanium element material in the titanium dioxide is added into the quantum dot diffusion plate without adding additional processes and increasing the production cost.
Compared with the traditional process of additionally attaching the quantum dot film to the surface, the manufacturing mode of in-situ co-extrusion can realize more uniform dispersion of quantum dot materials and improve the light conversion efficiency, and the technology does not add additional working procedures, except for the most basic raw material cost, does not increase more production cost, and can directly adopt one quantum dot diffusion plate to achieve various optical effects.
The screw extrusion equipment comprises three sections of heating areas, wherein the first section temperature of the heating area is 140-.
The raw materials of the protective layer and the quantum dot layer can be fully heated and mixed by adopting a sectional heating mode to form a molten state, the temperature control range of die head extrusion is 140-220 ℃, and the protective layer and the quantum dot layer are still in the molten state in the extrusion process to keep the smoothness of the die head.
Screw extrusion equipment is equipped with a plurality of feed inlet, and during screw extrusion equipment was put into to applicable multiple different raw materials, can add simultaneously the raw materials of multiple difference and extrude to realize the preparation of extruding of multiply wood, like the quantum dot layer of increase, can play the purpose of extruding in step through the raw materials on a set of quantum dot layer of synchronous increase.
The invention provides a quantum dot diffusion plate and a preparation method thereof.A protective layer covers the upper surface and the lower surface of a quantum dot layer, and is also made of plastic raw materials, inorganic diffusant and other materials, so that the protective layer has the function of light diffusion and can protect the quantum dot layer, prevent water and oxygen from entering the quantum dot layer and avoid the failure of quantum dots in the quantum dot layer; and quantum dot layer adopts quantum dot, titanium white powder and other materials are constituteed, through increasing titanium white powder, make the titanium element in the titanium white powder promote the diffusion effect of quantum dot diffuser plate, to the conversion of being strained partial light in original backlight, the utilization ratio of being shaded has been improved, and through the regulation to titanium and quantum dot raw materials component, can realize the change of the interior quantum dot spectrum of diffuser plate, thereby can match different backlight strip, the applicable flexibility ratio of quantum dot diffuser plate has been strengthened greatly, simultaneously through improving luminance, also reduce the holistic cost of backlight unit.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
1. A quantum dot diffusion plate is characterized by comprising a quantum dot layer, wherein protective layers are covered on the upper surface and the lower surface of the quantum dot layer;
the quantum dot layer comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer, 0.1-6% of magnesium silicate mineral, 0.01-1% of quantum dot and 0.2-5% of titanium dioxide;
the protective layer comprises the following raw materials in percentage by mass: 90-99% of plastic raw material, 0.01-1% of stabilizing agent, 0.1-3% of organic silicon, 0.1-3% of inorganic dispersing agent, 0.1-3% of dispersing oil, 0.1-2% of styrene-butadiene copolymer and 0.1-6% of magnesium silicate mineral.
2. The quantum dot diffusion plate according to claim 1, wherein the particle size of the quantum dots is 2 to 12 nm.
3. The quantum dot diffuser plate according to claim 1, wherein the number of quantum dot layers is at least one.
4. The quantum dot diffuser plate of claim 1, wherein the plastic materials of the quantum dot layer and the overcoat layer are one or more combinations of ps, pc, pmma, or ms.
5. The quantum dot diffusion plate according to claim 1, wherein PS heat-resistant agents are added to the raw materials of the quantum dot layer and the protective layer, and the PS heat-resistant agents comprise, by mass: 0.1 to 3 percent.
6. A method for preparing a quantum dot diffusion plate according to claim 1, comprising the steps of:
preparing two parts of protective layer raw materials with the same components and one part of raw materials of the quantum dot layer;
respectively and uniformly mixing the protective layer raw material and the quantum dot layer raw material;
respectively adding the mixed raw materials of the protective layer and the quantum dot layer into screw extrusion equipment for heating to form a molten state;
and finally, extruding the materials through a die head of screw extrusion equipment, and extruding the protective layer raw material and the quantum dot layer raw material in a sheet-shaped mode, wherein the protective layer covers the surface of the quantum dot layer.
7. The method as claimed in claim 7, wherein the screw extrusion device comprises three heating zones, the first temperature of the heating zone is 140-.
8. The method for preparing a quantum dot diffusion plate according to claim 7, wherein the temperature control range of the die head extrusion is 140-220 ℃.
9. The method of claim 7, wherein the screw extrusion device is provided with a plurality of inlets, and the method is suitable for feeding a plurality of different materials into the screw extrusion device.
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