CN114883198B - Multi-layer stacked star-type parallel current-sharing connection structure and connection method thereof - Google Patents
Multi-layer stacked star-type parallel current-sharing connection structure and connection method thereof Download PDFInfo
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Abstract
本发明公开了多层堆叠式星型并联的均流连接结构及其连接方法，多层堆叠式星型并联的均流连接方法包括步骤S1：第一导热铝板和第二导热铝板相对平行设置并且在第一导热铝板和第二导热铝板之间固定安装有反向并联的第一晶闸管和第二晶闸管，以使得第一导热铝板、第二导热铝板、第一晶闸管和第二晶闸管构成晶闸管支路部件。本发明公开的多层堆叠式星型并联的均流连接结构及其连接方法，其电流经过的铜排路径完全一致，即回路的阻抗完全相等，为整体均流减少了一个不均等因素，大大降低了均流的难度，并且采用垂直方向的多层堆叠结构，可实现更大的电流容量。
The present invention discloses a multi-layer stacked star-type parallel current-sharing connection structure and a connection method thereof, and the multi-layer stacked star-type parallel current-sharing connection method comprises step S1: a first heat-conducting aluminum plate and a second heat-conducting aluminum plate are arranged relatively parallel, and a first thyristor and a second thyristor connected in reverse parallel are fixedly installed between the first heat-conducting aluminum plate and the second heat-conducting aluminum plate, so that the first heat-conducting aluminum plate, the second heat-conducting aluminum plate, the first thyristor and the second thyristor constitute a thyristor branch component. The multi-layer stacked star-type parallel current-sharing connection structure and the connection method thereof disclosed by the present invention have completely consistent copper busbar paths through which current passes, that is, the impedance of the loop is completely equal, which reduces an unequal factor for overall current balancing, greatly reduces the difficulty of current balancing, and adopts a multi-layer stacking structure in a vertical direction, which can achieve a larger current capacity.
Description
技术领域Technical Field
本发明属于晶闸管并联均流技术领域，具体涉及一种多层堆叠式星型并联的均流连接结构和一种多层堆叠式星型并联的均流连接方法。The invention belongs to the technical field of thyristor parallel current sharing, and specifically relates to a multi-layer stacked star-shaped parallel current sharing connection structure and a multi-layer stacked star-shaped parallel current sharing connection method.
背景技术Background Art
晶闸管作为大功率电力电子器件，广泛应用于交流电的整流、投切角控制等场景。然而，受电力电子器件工艺和制造技术的限制，单只晶闸管的容量远不能满足工业大电流的使用环境需求。多个晶闸管并联是提升设备承载及通断大电流能力的有效方法，不仅可以扩展设备的应用范围，也有助于系统的冗余量设计。电流分布是否均衡直接影响设备的运行性能。As a high-power power electronic device, thyristor is widely used in AC rectification, switching angle control and other scenarios. However, due to the limitations of power electronic device process and manufacturing technology, the capacity of a single thyristor is far from meeting the requirements of industrial high current use environment. Connecting multiple thyristors in parallel is an effective way to improve the equipment's ability to carry and switch high currents. It can not only expand the application range of the equipment, but also help the redundancy design of the system. Whether the current distribution is balanced directly affects the operating performance of the equipment.
改善均流的方法主要有挑选性能差异小的器件、缩短触发信号的上升时间、减小母线配置不均等。随着制作工艺和检测精度的提高，晶闸管和配套元器件性能一致性已有明显改善。另外，通过改进触发电路设计，触发信号的上升时间也能够实现缩短。母线配置不均已成为晶闸管并联电路不均流的主要因素。目前较为常用的晶闸管并联方式为平行排布，然后在上下铜排的1/3处引出输入输出铜排。即各并联支路之间为平行关系，汇接点位于支路垂线的1/3处，如图4所示。The main methods to improve current sharing include selecting devices with small performance differences, shortening the rise time of the trigger signal, and reducing the uneven busbar configuration. With the improvement of manufacturing technology and detection accuracy, the performance consistency of thyristors and supporting components has been significantly improved. In addition, by improving the design of the trigger circuit, the rise time of the trigger signal can also be shortened. Uneven busbar configuration has become the main factor for uneven current in thyristor parallel circuits. At present, the more commonly used thyristor parallel connection method is parallel arrangement, and then the input and output copper bars are led out at 1/3 of the upper and lower copper bars. That is, the parallel branches are in parallel relationship, and the junction point is located at 1/3 of the vertical line of the branch, as shown in Figure 4.
但是，此布局方案存在三个缺点：However, this layout scheme has three disadvantages:
(1)这样的平行排布，只能稍微减小每个晶闸管回路的阻抗差异，在电流很大时，还是会出现较严重的不均流问题。。(1) Such a parallel arrangement can only slightly reduce the impedance difference of each thyristor circuit. When the current is large, a serious uneven current problem will still occur.
(2)大电流场景下，需要并联组数很多时，横向尺寸会很大，设备占地面积大，不能充分利用垂直方向的空间。(2) In high current scenarios, when a large number of parallel groups are required, the lateral dimensions will be very large, the equipment will occupy a large area, and the vertical space cannot be fully utilized.
(3)散热结构不对称，中间部分的晶闸管及铜排流经的电流大，整体温升会更大，而温升会带来晶闸管特性的变化，造成流过每个晶闸管通路的电流随着温度变化，不利于整体的均流控制。(3) The heat dissipation structure is asymmetric. The current flowing through the thyristor and copper busbar in the middle is large, and the overall temperature rise will be greater. The temperature rise will bring about changes in the thyristor characteristics, causing the current flowing through each thyristor path to change with temperature, which is not conducive to overall current equalization control.
因此，针对上述问题，予以进一步改进。Therefore, further improvements are made to the above problems.
发明内容Summary of the invention
本发明的主要目的在于提供多层堆叠式星型并联的均流连接结构及其连接方法，其电流经过的铜排路径完全一致，即回路的阻抗完全相等，为整体均流减少了一个不均等因素，大大降低了均流的难度，并且采用垂直方向的多层堆叠结构，在相同的占地面积上进一步提高了可并联组数，可实现更大的电流容量。The main purpose of the present invention is to provide a multi-layer stacked star-shaped parallel current-sharing connection structure and a connection method thereof, in which the copper busbar paths through which the current passes are completely consistent, that is, the impedance of the loop is completely equal, which reduces an unequal factor for the overall current sharing and greatly reduces the difficulty of current sharing. In addition, a multi-layer stacking structure in a vertical direction is adopted, which further increases the number of parallel groups on the same floor space and can achieve a larger current capacity.
为达到以上目的，本发明提供一种多层堆叠式星型并联的均流连接方法，用于实现晶闸管的均流，包括以下步骤：To achieve the above objectives, the present invention provides a multi-layer stacked star-type parallel current sharing connection method for realizing current sharing of thyristors, comprising the following steps:
步骤S1：第一导热铝板和第二导热铝板相对平行设置并且在第一导热铝板和第二导热铝板之间固定安装有反向并联的第一晶闸管和第二晶闸管，以使得第一导热铝板、第二导热铝板、第一晶闸管和第二晶闸管构成晶闸管支路部件；Step S1: a first heat-conducting aluminum plate and a second heat-conducting aluminum plate are arranged relatively parallel to each other, and a first thyristor and a second thyristor connected in reverse parallel are fixedly installed between the first heat-conducting aluminum plate and the second heat-conducting aluminum plate, so that the first heat-conducting aluminum plate, the second heat-conducting aluminum plate, the first thyristor and the second thyristor constitute a thyristor branch component;
步骤S2：晶闸管支路部件的第一导热铝板与第一转接铜排的一转接口连接并且第一转接铜排的中心处设有第一铜母排，晶闸管支路部件的第二导热铝板与第二转接铜排的一转接口连接并且第二转接铜排的中心处设有第二铜母排，第一转接铜排和第二转接铜排均设有预设数量的转接口并且通过转接口与对应数量的晶闸管支路部件连接，从而分别连接到第一铜母排和第二铜母排，以形成一个星型组件层；Step S2: the first heat-conducting aluminum plate of the thyristor branch component is connected to an adapter interface of the first adapter copper bar, and a first copper busbar is provided at the center of the first adapter copper bar; the second heat-conducting aluminum plate of the thyristor branch component is connected to an adapter interface of the second adapter copper bar, and a second copper busbar is provided at the center of the second adapter copper bar; the first adapter copper bar and the second adapter copper bar are both provided with a preset number of adapter interfaces and are connected to a corresponding number of thyristor branch components through the adapter interfaces, thereby being respectively connected to the first copper busbar and the second copper busbar to form a star-shaped component layer;
步骤S3：若干数量的星型组件层在垂直于地面方向进行堆叠，第一连接铜排根据二分连接法将相邻两个星型组件层的对应的铜母排进行连接，并且第二连接铜排根据二分连接法将间隔的两个第一连接铜排进行连接，以使得在第二连接铜排的中心位置引出作为整体的输入输出铜排。Step S3: A number of star-shaped component layers are stacked in a direction perpendicular to the ground, and the first connecting copper busbar connects the corresponding copper busbars of two adjacent star-shaped component layers according to the binary connection method, and the second connecting copper busbar connects the two spaced first connecting copper buses according to the binary connection method, so that the input and output copper busbar as a whole is led out at the center position of the second connecting copper busbar.
作为上述技术方案的进一步优选的技术方案，步骤S3具体实施为一下步骤：As a further preferred technical solution of the above technical solution, step S3 is specifically implemented as follows:
步骤S3.1：第一连接铜排的第一支架连接星型组件层的第一铜母排并且第一连接铜排的第二支架连接相邻星型组件层的第一铜母排，以使得第一连接铜排的第一支架和第二支架的连接中间处作为与第二连接铜排的连接点，并且第二连接铜排采用二分连接法将间隔的两个第一连接铜排(均连接星型组件层的第一铜母排)进行连接，进而在第二连接铜排的中心位置引出作为整体的输入输出铜排；Step S3.1: The first bracket of the first connecting copper bar is connected to the first copper busbar of the star-shaped component layer and the second bracket of the first connecting copper bar is connected to the first copper busbar of the adjacent star-shaped component layer, so that the middle of the connection between the first bracket and the second bracket of the first connecting copper bar is used as the connection point with the second connecting copper bar, and the second connecting copper bar adopts a binary connection method to connect the two spaced first connecting copper bars (both connected to the first copper busbar of the star-shaped component layer), and then the input and output copper bars as a whole are led out at the center position of the second connecting copper bar;
步骤S3.2：相邻第一连接铜排(与步骤S3.1的第一连接铜排相邻)第一支架连接星型组件层的第二铜母排并且相邻第一连接铜排的第二支架连接相邻星型组件层的第二铜母排，以使得相邻第一连接铜排的第一支架和第二支架的连接中间处作为与第二连接铜排的连接点，并且第二连接铜排采用二分连接法将间隔的两个相邻第一连接铜排(均连接星型组件层的第二铜母排)进行连接，进而在第二连接铜排的中心位置引出作为整体的输入输出铜排(输入输出是相对的，如果步骤S3.1中的为输入铜排，则此处为输出铜排)；Step S3.2: The first bracket of the adjacent first connecting copper bar (adjacent to the first connecting copper bar in step S3.1) is connected to the second copper busbar of the star-shaped component layer, and the second bracket of the adjacent first connecting copper bar is connected to the second copper busbar of the adjacent star-shaped component layer, so that the middle of the connection between the first bracket and the second bracket of the adjacent first connecting copper bar is used as the connection point with the second connecting copper bar, and the second connecting copper bar adopts a binary connection method to connect the two adjacent first connecting copper bars (both connected to the second copper busbar of the star-shaped component layer), and then the input and output copper bars as a whole are led out at the center position of the second connecting copper bar (the input and output are relative, if the input copper bar in step S3.1, then the output copper bar here);
步骤S3.3：通过若干第一连接铜排和若干第二连接铜排使得若干星型组件层在垂直于地面方向进行堆叠，以使得实现晶闸管的均流的提高电流的通断能力。Step S3.3: A plurality of star-shaped component layers are stacked in a direction perpendicular to the ground through a plurality of first connecting copper bars and a plurality of second connecting copper bars, so as to achieve current sharing of the thyristors and improve the current switching capability.
作为上述技术方案的进一步优选的技术方案，步骤S3之后还包括步骤S4：相邻星型组件层之间均安装有绝缘隔板，以增加相邻星型组件层之间的绝缘性能并且防止相邻星型组件层之间由于同向电流的互相吸引力从而进行相互吸引。As a further preferred technical solution of the above technical solution, step S4 is also included after step S3: insulating partitions are installed between adjacent star-shaped component layers to increase the insulation performance between adjacent star-shaped component layers and prevent adjacent star-shaped component layers from attracting each other due to the mutual attraction of unidirectional currents.
作为上述技术方案的进一步优选的技术方案，步骤S2中，星型组件层的晶闸管均采用星型连接，以使得每一个晶闸管回路均完全对称相等，以保证回路阻抗的一致性；As a further preferred technical solution of the above technical solution, in step S2, the thyristors of the star-shaped component layer are all connected in a star shape, so that each thyristor loop is completely symmetrical and equal, so as to ensure the consistency of loop impedance;
步骤S3中，第一连接铜排的第一支架到(第一或者第二)铜母排的距离与第一连接铜排的第二支架到相邻(第一或者第二)铜母排的距离相等，以保证连接铜排的阻抗一致性。In step S3, the distance from the first bracket of the first connecting copper bar to the (first or second) copper busbar is equal to the distance from the second bracket of the first connecting copper bar to the adjacent (first or second) copper busbar, so as to ensure the impedance consistency of the connecting copper bar.
为达到以上目的，本发明还提供一种多层堆叠式星型并联的均流连接结构，应用于所述的一种多层堆叠式星型并联的均流连接方法。In order to achieve the above objectives, the present invention also provides a multi-layer stacked star-type parallel current-sharing connection structure, which is applied to the multi-layer stacked star-type parallel current-sharing connection method.
本发明的有益效果在于：The beneficial effects of the present invention are:
1、电流流经的铜排长度完全一致，理论上由铜排带来的回路阻抗完全相等，为实现晶闸管的均流提供了有利的保障。而图4所示的连接方法，只能在一定程度上减少铜排回路的不均等。1. The length of the copper busbar through which the current flows is completely consistent. In theory, the loop impedance brought by the copper busbar is completely equal, which provides a favorable guarantee for achieving the current equalization of the thyristor. However, the connection method shown in Figure 4 can only reduce the inequality of the copper busbar loop to a certain extent.
2、散热结构完全对称，可最大程度的保证每个晶闸管有相同的温升，减少由温升带来的晶闸管特性变化造成的不均流问题。2. The heat dissipation structure is completely symmetrical, which can ensure that each thyristor has the same temperature rise to the greatest extent, reducing the uneven current problem caused by the change of thyristor characteristics caused by temperature rise.
3、充分利用了垂直方向的空间，在相同的占地面积上可实现更多组数晶闸管的并联，实现更高的电流通断能力。3. The vertical space is fully utilized, and more groups of thyristors can be connected in parallel on the same floor space to achieve higher current switching capacity.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是本发明的多层堆叠式星型并联的均流连接结构及其连接方法的结构示意图。FIG1 is a schematic structural diagram of a multi-layer stacked star-type parallel current-sharing connection structure and a connection method thereof according to the present invention.
图2是本发明的多层堆叠式星型并联的均流连接结构及其连接方法的结构示意图。FIG. 2 is a schematic structural diagram of a multi-layer stacked star-type parallel current-sharing connection structure and a connection method thereof according to the present invention.
图3是本发明的多层堆叠式星型并联的均流连接结构及其连接方法的晶闸管支路部件的结构示意图。FIG3 is a schematic structural diagram of the thyristor branch components of the multi-layer stacked star-type parallel current-sharing connection structure and the connection method thereof of the present invention.
图4是传统的晶闸管多组并联结构示意图。FIG. 4 is a schematic diagram of a conventional structure of multiple groups of thyristors connected in parallel.
附图标记包括：100、星型组件层；110、晶闸管支路部件；111、第一导热铝板；112、第二导热铝板；113、第一晶闸管；114、第二晶闸管；120、第一转接铜排；130、第二转接铜排；140、第一铜母排；150、第二铜母排；160、绝缘隔板；200、第一转接铜排；210、第一支架；220、第二支架；300、第二转接铜排；400、输入输出铜排。The reference numerals include: 100, star-shaped component layer; 110, thyristor branch component; 111, first thermally conductive aluminum plate; 112, second thermally conductive aluminum plate; 113, first thyristor; 114, second thyristor; 120, first transfer copper busbar; 130, second transfer copper busbar; 140, first copper busbar; 150, second copper busbar; 160, insulating partition; 200, first transfer copper busbar; 210, first bracket; 220, second bracket; 300, second transfer copper busbar; 400, input and output copper busbar.
具体实施方式DETAILED DESCRIPTION
以下描述用于揭露本发明以使本领域技术人员能够实现本发明。以下描述中的优选实施例只作为举例，本领域技术人员可以想到其他显而易见的变型。在以下描述中界定的本发明的基本原理可以应用于其他实施方案、变形方案、改进方案、等同方案以及没有背离本发明的精神和范围的其他技术方案。The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art can think of other obvious variations. The basic principles of the present invention defined in the following description can be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not deviate from the spirit and scope of the present invention.
在本发明的优选实施例中，本领域技术人员应注意，本发明所涉及的晶闸管等可被视为现有技术。In the preferred embodiments of the present invention, those skilled in the art should note that the thyristor and the like involved in the present invention may be regarded as prior art.
优选实施例。Preferred embodiments.
本发明公开了一种多层堆叠式星型并联的均流连接方法，用于实现晶闸管的均流，包括以下步骤：The present invention discloses a multi-layer stacked star-type parallel current sharing connection method for realizing current sharing of thyristors, comprising the following steps:
步骤S1：第一导热铝板111和第二导热铝板112相对平行设置并且在第一导热铝板111和第二导热铝板112之间固定安装有反向并联的第一晶闸管113和第二晶闸管114，以使得第一导热铝板111、第二导热铝板112、第一晶闸管113和第二晶闸管114构成晶闸管支路部件110；Step S1: the first heat-conducting aluminum plate 111 and the second heat-conducting aluminum plate 112 are arranged relatively parallel, and the first thyristor 113 and the second thyristor 114 connected in reverse parallel are fixedly installed between the first heat-conducting aluminum plate 111 and the second heat-conducting aluminum plate 112, so that the first heat-conducting aluminum plate 111, the second heat-conducting aluminum plate 112, the first thyristor 113 and the second thyristor 114 constitute a thyristor branch component 110;
步骤S2：晶闸管支路部件110的第一导热铝板111与第一转接铜排120的一转接口连接并且第一转接铜排120的中心处设有第一铜母排140，晶闸管支路部件110的第二导热铝板112与第二转接铜排130的一转接口连接并且第二转接铜排130的中心处设有第二铜母排150，第一转接铜排130和第二转接铜排140均设有预设数量的转接口并且通过转接口与对应数量的晶闸管支路部件110连接，从而分别连接到第一铜母排140和第二铜母排150，以形成一个星型组件层100；Step S2: the first heat-conducting aluminum plate 111 of the thyristor branch component 110 is connected to an adapter interface of the first adapter copper bar 120, and a first copper busbar 140 is provided at the center of the first adapter copper bar 120; the second heat-conducting aluminum plate 112 of the thyristor branch component 110 is connected to an adapter interface of the second adapter copper bar 130, and a second copper busbar 150 is provided at the center of the second adapter copper bar 130; the first adapter copper bar 130 and the second adapter copper bar 140 are both provided with a preset number of adapter interfaces and are connected to a corresponding number of thyristor branch components 110 through the adapter interfaces, thereby being respectively connected to the first copper busbar 140 and the second copper busbar 150, so as to form a star-shaped component layer 100;
步骤S3：若干数量的星型组件层100在垂直于地面方向进行堆叠，第一连接铜排200根据二分连接法将相邻两个星型组件层100的对应的铜母排进行连接，并且第二连接铜排300根据二分连接法将间隔的两个第一连接铜排200进行连接，以使得在第二连接铜排300的中心位置引出作为整体的输入输出铜排400。Step S3: A number of star-shaped component layers 100 are stacked in a direction perpendicular to the ground, and the first connecting copper busbar 200 connects the corresponding copper busbars of two adjacent star-shaped component layers 100 according to the binary connection method, and the second connecting copper busbar 300 connects the two spaced first connecting copper buses 200 according to the binary connection method, so that the input and output copper busbar 400 as a whole is led out at the center position of the second connecting copper busbar 300.
具体的是，步骤S3具体实施为一下步骤：Specifically, step S3 is implemented as follows:
步骤S3.1：第一连接铜排200的第一支架210连接星型组件层100的第一铜母排140并且第一连接铜排200的第二支架220连接相邻星型组件层100的第一铜母排140，以使得第一连接铜排200的第一支架210和第二支架220的连接中间处作为与第二连接铜排300的连接点，并且第二连接铜排300采用二分连接法将间隔的两个第一连接铜排200(均连接星型组件层的第一铜母排)进行连接，进而在第二连接铜排300的中心位置引出作为整体的输入输出铜排400；Step S3.1: The first bracket 210 of the first connecting copper bar 200 is connected to the first copper busbar 140 of the star-shaped component layer 100, and the second bracket 220 of the first connecting copper bar 200 is connected to the first copper busbar 140 of the adjacent star-shaped component layer 100, so that the middle of the connection between the first bracket 210 and the second bracket 220 of the first connecting copper bar 200 is used as the connection point with the second connecting copper bar 300, and the second connecting copper bar 300 adopts a binary connection method to connect the two spaced first connecting copper bars 200 (both connected to the first copper busbar of the star-shaped component layer), and then the input and output copper bar 400 as a whole is led out at the center position of the second connecting copper bar 300;
步骤S3.2：相邻第一连接铜排200(与步骤S3.1的第一连接铜排相邻)第一支架210连接星型组件层100的第二铜母排150并且相邻第一连接铜排200的第二支架210连接相邻星型组件层100的第二铜母排150，以使得相邻第一连接铜排200的第一支架210和第二支架220的连接中间处作为与第二连接铜排300的连接点，并且第二连接铜排300采用二分连接法将间隔的两个相邻第一连接铜排200(均连接星型组件层的第二铜母排)进行连接，进而在第二连接铜排300的中心位置引出作为整体的输入输出铜排400(输入输出是相对的，如果步骤S3.1中的为输入铜排，则此处为输出铜排)；Step S3.2: The first bracket 210 of the adjacent first connecting copper bar 200 (adjacent to the first connecting copper bar in step S3.1) is connected to the second copper busbar 150 of the star-shaped component layer 100, and the second bracket 210 of the adjacent first connecting copper bar 200 is connected to the second copper busbar 150 of the adjacent star-shaped component layer 100, so that the middle of the connection between the first bracket 210 and the second bracket 220 of the adjacent first connecting copper bar 200 is used as the connection point with the second connecting copper bar 300, and the second connecting copper bar 300 adopts a binary connection method to connect the two adjacent first connecting copper bars 200 (both connected to the second copper busbar of the star-shaped component layer), and then the input and output copper bar 400 as a whole is led out at the center position of the second connecting copper bar 300 (the input and output are relative, if the input copper bar in step S3.1, then the output copper bar here);
步骤S3.3：通过若干第一连接铜排和若干第二连接铜排使得若干星型组件层在垂直于地面方向进行堆叠，以使得实现晶闸管的均流的提高电流的通断能力。Step S3.3: A plurality of star-shaped component layers are stacked in a direction perpendicular to the ground through a plurality of first connecting copper bars and a plurality of second connecting copper bars, so as to achieve current sharing of the thyristors and improve the current switching capability.
更具体的是，步骤S3之后还包括步骤S4：相邻星型组件层100之间均安装有绝缘隔板160，以增加相邻星型组件层之间的绝缘性能并且防止相邻星型组件层之间由于同向电流的互相吸引力从而进行相互吸引。More specifically, step S3 further includes step S4: insulating partitions 160 are installed between adjacent star-shaped component layers 100 to increase the insulation performance between adjacent star-shaped component layers and prevent adjacent star-shaped component layers from attracting each other due to the mutual attraction of currents in the same direction.
进一步的是，步骤S2中，星型组件层100的晶闸管均采用星型连接，以使得每一个晶闸管回路均完全对称相等，以保证回路阻抗的一致性；Furthermore, in step S2, the thyristors of the star-shaped component layer 100 are all connected in a star shape, so that each thyristor loop is completely symmetrical and equal, so as to ensure the consistency of the loop impedance;
步骤S3中，第一连接铜排200的第一支架210到(第一或者第二)铜母排的距离与第一连接铜排200的第二支架220到相邻(第一或者第二)铜母排的距离相等，以保证连接铜排的阻抗一致性。In step S3, the distance from the first bracket 210 of the first connecting copper bar 200 to the (first or second) copper busbar is equal to the distance from the second bracket 220 of the first connecting copper bar 200 to the adjacent (first or second) copper busbar to ensure impedance consistency of the connecting copper bars.
本发明还公开了一种多层堆叠式星型并联的均流连接结构，应用于所述的一种多层堆叠式星型并联的均流连接方法。The present invention also discloses a multi-layer stacked star-shaped parallel current-sharing connection structure, which is applied to the multi-layer stacked star-shaped parallel current-sharing connection method.
优选地，在使用晶闸管作为通断开关的大电流应用中，多组晶闸管并联时，每个并联回路的铜排长度不一致即每个回路的铜排阻抗不一致，会导致不均流问题的加剧。针对此现象，本发明提出了多层堆叠式星型的并联结构及其连接方法。理论上电流经过的铜排路径完全一致，即回路的阻抗完全相等，为整体均流减少了一个不均等因素，大大降低了均流的难度。且采用垂直方向的多层堆叠结构，在相同的占地面积上进一步提高了可并联组数，可实现更大的电流容量。Preferably, in a high current application using thyristors as on-off switches, when multiple groups of thyristors are connected in parallel, the copper busbar lengths of each parallel loop are inconsistent, i.e., the copper busbar impedances of each loop are inconsistent, which can lead to an aggravation of the uneven current problem. In view of this phenomenon, the present invention proposes a multi-layer stacked star-shaped parallel structure and a connection method thereof. In theory, the copper busbar paths through which the current passes are completely consistent, i.e., the impedances of the loops are completely equal, which reduces an unequal factor for overall current sharing and greatly reduces the difficulty of current sharing. And by adopting a multi-layer stacked structure in a vertical direction, the number of parallel groups is further increased on the same floor space, and a larger current capacity can be achieved.
本发明提出的均流连接方法的结构，以最上层为例，第一导热铝板和第二导热铝板中间安装有两颗反向并联的晶闸管，这四个零件由铝板两端的各两颗螺栓螺母锁紧，组成一组晶闸管支路部件。每一组的上下铝板通过各一块转接铜排与上下两块圆形(或多边形)铜母排连接，由螺栓螺母锁紧固定，由此，完成了一个导电支路的组装。每一圆形(或多边形)铜母排与该层上的支路连接，形成一个星型组件层。The structure of the current-sharing connection method proposed in the present invention, taking the top layer as an example, two reverse-parallel thyristors are installed between the first heat-conducting aluminum plate and the second heat-conducting aluminum plate. These four parts are locked by two bolts and nuts at both ends of the aluminum plate to form a group of thyristor branch components. The upper and lower aluminum plates of each group are connected to the upper and lower circular (or polygonal) copper busbars through a transfer copper busbar, which are locked and fixed by bolts and nuts, thereby completing the assembly of a conductive branch. Each circular (or polygonal) copper busbar is connected to the branch on this layer to form a star-shaped component layer.
本发明的整体结构由垂直于地面方向堆叠起来的四个星型组件层构成，并采用二分连接法，通过第一转接铜排把相邻两个星型组件层连接后，再次采用二分连接法，通过第二转接铜排连接上下两个组件，并在连接铜排的中心位置引出母排，作为整体的输入输出铜排。每一层组件之间用绝缘隔板隔开，该隔板有两个作用，一为增加两层组件之间的绝缘性能，二是防止两层组件之间因同向电流的互相吸引力吸引到一起而发生意外。采用上述连接方法，保证电流经过的铜排路径长度完全一致，理论上由铜排带来的回路阻抗完全相等，为整体的均流提供了有力保证。The overall structure of the present invention is composed of four star-shaped component layers stacked vertically to the ground, and adopts a two-way connection method. After connecting two adjacent star-shaped component layers through the first transfer copper busbar, the two-way connection method is adopted again to connect the upper and lower components through the second transfer copper busbar, and the busbar is led out at the center of the connecting copper busbar as the overall input and output copper busbar. Each layer of components is separated by an insulating partition. The partition has two functions: one is to increase the insulation performance between the two layers of components, and the other is to prevent accidents caused by the mutual attraction of the same-direction current between the two layers of components. The above connection method is adopted to ensure that the copper busbar path length through which the current passes is completely consistent. In theory, the loop impedance brought by the copper busbar is completely equal, which provides a strong guarantee for the overall current sharing.
优选地，本发明的优点在于：Preferably, the advantages of the present invention are:
1、每一层的晶闸管采用星型连接，每一个晶闸管回路都完全对称相等，保证回路阻抗的一致性。1. The thyristors on each layer are star-connected, and each thyristor circuit is completely symmetrical and equal to ensure the consistency of circuit impedance.
2、层与层之间采用二分法连接，到每一层的连接铜排的长度也完全相等，保证连接铜排的阻抗一致。2. The layers are connected by binary method, and the length of the connecting copper busbar to each layer is exactly equal to ensure the consistent impedance of the connecting copper busbar.
3、层与层之间采用垂直堆叠方式安装，充分利用垂直方向的空间，大大提高设备的空间利用率。3. The layers are installed in a vertical stacking manner to make full use of the vertical space and greatly improve the space utilization rate of the equipment.
值得一提的是，本发明专利申请涉及的晶闸管等技术特征应被视为现有技术，这些技术特征的具体结构、工作原理以及可能涉及到的控制方式、空间布置方式采用本领域的常规选择即可，不应被视为本发明专利的发明点所在，本发明专利不做进一步具体展开详述。It is worth mentioning that the technical features such as thyristors involved in the patent application of this invention should be regarded as prior art. The specific structure, working principle and possible control method and spatial layout method of these technical features can be selected by conventional methods in the field, and should not be regarded as the inventive point of the patent of this invention. The patent of this invention will not be further elaborated.
对于本领域的技术人员而言，依然可以对前述各实施例所记载的技术方案进行修改，或对其中部分技术特征进行等同替换，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围。For those skilled in the art, it is still possible to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
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| CN110350803A (en) * | 2019-07-10 | 2019-10-18 | 陕西高科电力电子有限责任公司 | A kind of main circuit structure can solve multiple power electronic devices parallel current-sharing problems |
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