CN114878028A

CN114878028A - Temperature error detection method, device, equipment and storage medium

Info

Publication number: CN114878028A
Application number: CN202210730139.6A
Authority: CN
Inventors: 不公告发明人
Original assignee: Shanghai Biren Intelligent Technology Co Ltd
Current assignee: Shanghai Biren Intelligent Technology Co Ltd
Priority date: 2022-06-24
Filing date: 2022-06-24
Publication date: 2022-08-09

Abstract

A temperature error detection method, device, equipment and storage medium of a temperature sensor based on a band-gap reference circuit. The temperature error detection method comprises the following steps: acquiring a temperature sensing circuit model parameter; obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters; obtaining a first parameter and a second parameter from the temperature coefficient simulation curve; obtaining a first-order standard curve based on the first parameter and the second parameter; and obtaining the temperature error based on the temperature coefficient simulation curve and the first-order standard curve. The temperature error detection method obtains a first-order standard curve based on a temperature coefficient simulation curve obtained by simulating the temperature sensing circuit, and does not need to perform complex multi-order calculation, thereby reducing the calculation complexity, saving the calculation cost and improving the calculation efficiency.

Description

Temperature error detection method, device, equipment and storage medium

Technical Field

Embodiments of the present disclosure relate to a temperature error detection method, apparatus, device, and storage medium.

Background

The temperature sensor is widely applied to the fields of modern industry, medical treatment, traffic, intelligent home and the like. An integrated CMOS (Complementary Metal Oxide Semiconductor) temperature sensor is widely used in application scenarios such as various systems on chip (SoC), industrial internet of things, and wireless sensor networks. The circuit of the temperature sensor may comprise a bandgap reference circuit. Since the bandgap reference circuit is insensitive to external environmental factors, it can be used to reduce or prevent abnormal operation of the circuit of the temperature sensor and ensure its reliability.

Disclosure of Invention

At least one embodiment of the present disclosure provides a temperature error detection method for a temperature sensor based on a bandgap reference circuit. The temperature error detection method comprises the following steps: acquiring the temperature sensing circuit model parameters; obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters; obtaining a first parameter and a second parameter from the temperature coefficient simulation curve; obtaining a first order standard curve based on the first parameter and the second parameter; and obtaining a temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the obtaining a first parameter and a second parameter from the temperature coefficient simulation curve includes: performing first processing on the temperature coefficient simulation curve to obtain the first parameter; and carrying out second processing on the temperature coefficient simulation curve to obtain the second parameter.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the performing a first process on the temperature coefficient simulation curve to obtain the first parameter includes: deriving the temperature coefficient simulation curve to obtain a slope waveform of the temperature coefficient simulation curve; third processing is performed on the slope waveform to obtain the first parameter.

For example, in a temperature error detection method provided by at least one embodiment of the present disclosure, the third processing on the slope waveform to obtain the first parameter includes: acquiring a first threshold and a second threshold of the slope waveform; a weighted sum of a first threshold of the slope waveform and a second threshold of the slope waveform is taken to obtain the first parameter.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the performing a second process on the temperature coefficient simulation curve to obtain the second parameter includes: obtaining a first intercept based on the first parameter and the temperature coefficient simulation curve; obtaining a second intercept based on the first parameter and the temperature coefficient simulation curve; a weighted sum of the first and second intercepts is taken to obtain the second parameter.

For example, in a temperature error detection method provided by at least one embodiment of the present disclosure, the obtaining a first intercept based on the first parameter and the temperature coefficient simulation curve includes: obtaining a first straight line tangent to the temperature coefficient simulation curve based on the first parameter and the temperature coefficient simulation curve; and obtaining the first intercept based on the intersection point of the first straight line and the ordinate axis of the temperature coefficient simulation curve.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the obtaining a second intercept based on the first parameter and the temperature coefficient simulation curve includes: acquiring a first threshold value and a second threshold value of the temperature coefficient simulation curve; obtaining a second straight line intersecting the first threshold value of the temperature coefficient simulation curve based on the first parameter and the first threshold value of the temperature coefficient simulation curve; obtaining a third intercept based on an intersection point of the second straight line and the ordinate axis of the temperature coefficient simulation curve; obtaining a third straight line intersecting the second threshold value of the temperature coefficient simulation curve based on the first parameter and the second threshold value of the temperature coefficient simulation curve; obtaining a fourth intercept based on an intersection point of the third straight line and the ordinate axis of the temperature coefficient simulation curve; comparing the third intercept and the fourth intercept to obtain the second intercept.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the temperature coefficient simulation curve is a convex function, and the comparing the third intercept and the fourth intercept to obtain the second intercept includes: in response to the third intercept being less than the fourth intercept, the second intercept is the third intercept; the second intercept is the fourth intercept in response to the fourth intercept being less than the third intercept.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the temperature coefficient simulation curve is a concave function, and the comparing the third intercept and the fourth intercept to obtain the second intercept includes: in response to the third intercept being greater than the fourth intercept, the second intercept is the third intercept; the second intercept is the fourth intercept in response to the fourth intercept being greater than the third intercept. For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the obtaining a first parameter and a second parameter from the temperature coefficient simulation curve includes: measuring to obtain a first temperature coefficient of the temperature sensing circuit; obtaining the corrected second parameter based on the first parameter and the first temperature coefficient.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the obtaining a first parameter and a second parameter from the temperature coefficient simulation curve includes: measuring a first temperature coefficient of the temperature sensing circuit and a second temperature coefficient different from the first temperature coefficient; obtaining the corrected first parameter and the corrected second parameter based on the first temperature coefficient and the second temperature coefficient.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the obtaining a temperature error based on the temperature coefficient simulation curve and the first-order standard curve includes: reading a first temperature; obtaining a simulated temperature coefficient based on the first temperature and the temperature coefficient simulation curve; obtaining a first standard temperature coefficient based on the first temperature and the first order standard curve; obtaining the temperature error based on the simulated temperature coefficient, the first standard temperature coefficient, and the first parameter.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameter includes: obtaining a reference voltage and a positive temperature coefficient voltage based on the temperature sensing circuit model; performing at least one first simulation by using the reference voltage and the positive temperature coefficient voltage to obtain at least one first temperature coefficient simulation curve; and obtaining the temperature coefficient simulation curve based on the at least one first temperature coefficient simulation curve.

For example, in a temperature error detection method provided in at least one embodiment of the present disclosure, the obtaining a reference voltage and a positive temperature coefficient voltage based on the temperature sensing circuit model includes: enabling the temperature sensing circuit model to generate positive temperature coefficient current and corresponding first positive temperature coefficient voltage; causing the temperature sensing circuit model to generate the reference voltage based on the positive temperature coefficient current; and enabling the temperature sensing circuit model to generate the positive temperature coefficient voltage which is scaled relative to the first positive temperature coefficient voltage based on the positive temperature coefficient current.

At least one embodiment of the present disclosure provides a temperature error detection apparatus of a temperature sensor based on a bandgap reference circuit. The temperature error detection device includes: the acquisition module is configured to acquire temperature sensing circuit model parameters; the simulation module is configured to obtain a temperature coefficient simulation curve based on the temperature sensing circuit model parameters; a processing module configured to obtain a first parameter and a second parameter from the temperature coefficient simulation curve, and obtain a first order standard curve based on the first parameter and the second parameter, and obtain a temperature error based on the temperature coefficient simulation curve and the first order standard curve.

For example, in the temperature error detection apparatus provided in at least one embodiment of the present disclosure, the processing module is further configured to perform a first processing on the temperature coefficient simulation curve to obtain the first parameter, and perform a second processing on the temperature coefficient simulation curve to obtain the second parameter.

For example, the temperature error detection apparatus provided by at least one embodiment of the present disclosure further includes a measurement module configured to measure and obtain a first temperature coefficient of the temperature sensing circuit, and measure and obtain a second temperature coefficient of the temperature sensing circuit different from the first temperature coefficient, wherein the processing module is further configured to obtain the modified second parameter based on the first parameter and the first temperature coefficient, or obtain the modified first parameter and the modified second parameter based on the first temperature coefficient and the second temperature coefficient.

At least one embodiment of the present disclosure also provides a temperature error detection apparatus of a temperature sensor based on a bandgap reference circuit. The temperature error detection apparatus includes: a processor; a memory including one or more computer program modules; wherein the one or more computer program modules are stored in the memory and configured to be executed by the processor, the one or more computer program modules comprising instructions for implementing the methods provided by any of the embodiments of the present disclosure.

At least one embodiment of the present disclosure also provides a storage medium for storing non-transitory computer-readable instructions that, when executed by a computer, may implement the method provided by any one of the embodiments of the present disclosure.

Drawings

To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description only relate to some embodiments of the present disclosure and do not limit the present disclosure.

FIG. 1A is a circuit diagram of an exemplary circuit for generating a positive temperature coefficient voltage;

FIG. 1B is a schematic structural diagram of a temperature sensor;

FIG. 1C is a graph of temperature coefficient versus temperature generated by a temperature sensing circuit;

fig. 2 is a schematic diagram of a bandgap reference circuit provided in at least one embodiment of the present disclosure;

fig. 3 is an exemplary circuit diagram of a bandgap reference circuit provided in at least one embodiment of the present disclosure;

fig. 4 is a schematic diagram of a temperature sensing circuit provided in at least one embodiment of the present disclosure;

FIG. 5 is a graph of an example temperature coefficient versus temperature generated by a temperature sensing circuit according to at least one embodiment of the present disclosure;

fig. 6 is an exemplary flowchart of a temperature error detection method of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure;

FIG. 7 is an exemplary flowchart of one example of step S20 in FIG. 6;

FIG. 8 is an exemplary flowchart of one example of step S30 in FIG. 6;

FIG. 9A is a schematic view showing an example of steps S30-S40 in FIG. 6;

FIG. 9B is a schematic view showing another example of steps S30-S40 in FIG. 6;

FIG. 10 is an exemplary flowchart of one example of step S50 in FIG. 6;

FIG. 11 is a schematic view of one example of FIG. 10;

FIG. 12 is another exemplary flowchart of step S30 of FIG. 6;

FIG. 13 is yet another exemplary flowchart of step S30 of FIG. 6;

fig. 14 is a schematic diagram illustrating an example of a method for detecting a temperature error of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure;

fig. 15 is a schematic diagram illustrating another example of a temperature error detection method of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure;

fig. 16 is a schematic block diagram of a temperature error detection apparatus of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure;

fig. 17 is a schematic block diagram of a temperature error detection apparatus of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure;

fig. 18 is a schematic block diagram of another temperature error detection apparatus for a bandgap reference circuit based temperature sensor provided in at least one embodiment of the present disclosure; and

fig. 19 is a schematic diagram of a storage medium according to at least one embodiment of the disclosure.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.

Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a," "an," or "the" and similar referents do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.

The present disclosure is illustrated by the following specific examples. Detailed descriptions of known functions and known components may be omitted in order to keep the following description of the embodiments of the present disclosure clear and concise. When any component of an embodiment of the present disclosure appears in more than one drawing, that component is identified in each drawing by the same or similar reference numeral.

The circuitry of the temperature sensor may operate based on a reference voltage provided by an external power source or any other circuitry, the reference voltage typically being invariant with respect to external factors such as temperature. For example, the circuit of the temperature sensor may include a bandgap reference circuit. A Bandgap Reference circuit, also known as a Bandgap Reference (Bandgap Reference), provides a Reference voltage insensitive to variations in process corner-supply voltage-temperature (PVT) on the one hand, and a positive temperature coefficient voltage positively correlated to temperature on the other hand.

In general, the base-emitter voltage (V) of a bipolar transistor (triode) _BE ) Has a negative temperature coefficient. However, when the two transistors have different gains, the current density is proportional (e.g., doubled)Numerical relationship), their respective base-emitter voltages are different by a difference (Δ V) _BE ) Will have a positive temperature coefficient in a positive variation relationship with absolute temperature.

FIG. 1A is a circuit diagram of an exemplary circuit for generating a positive temperature coefficient voltage. As shown in FIG. 1A, circuit 10 includes a bipolar transistor Q ₁ And Q ₂ . In some examples, a bipolar transistor Q ₂ May be implemented by a plurality of bipolar transistors connected in parallel. When the bipolar transistor Q ₁ Has a current density of I _s Bipolar transistor Q ₂ Current density of nI _s (n is a constant), their base-emitter voltage difference Δ V _BE Can be expressed by the following formula (1):

wherein, V _BE And V _BE2 Are bipolar transistors Q respectively ₁ And Q ₂ A base-emitter voltage of; thermal voltage V _T kT/q (k is boltzmann's constant, q is the amount of electron charge, and T is the thermodynamic temperature); n is the ratio of the gain of transistor Q2 to the gain of transistor Q1. Thus, the bipolar transistor Q ₁ And Q ₂ Of the base-emitter voltage difference Δ V _BE May be in a positive temperature variation relationship, i.e., have a positive temperature coefficient.

By applying the above-described positive temperature coefficient voltage (e.g., difference Δ V between base-emitter voltages of bipolar transistors Q1 and Q2) _BE ) With a voltage having a negative temperature coefficient (e.g., the base-emitter voltage of bipolar transistor Q1) separately weighted by an appropriate weight/coefficient (α) and superimposed, the positive and negative temperature coefficients can cancel each other out, thereby obtaining a reference voltage that is not temperature sensitive.

Fig. 1B is a schematic structural diagram of a temperature sensor. For example, as shown in fig. 1B, the temperature sensor includes a bandgap reference circuit, an Analog-to-Digital Converter (ADC) and a scaling circuit. For example, in a bandgap reference circuit, the current I is measured ₁ 、pI ₁ And I ₂ Are respectively injected into the bipolar transistor rA _E 、A _E And A ₂ Emitter of, a bipolar transistor rA _E 、A _E And A ₂ Respectively generate negative temperature coefficient voltage V _BE1 、V’ _BE1 And V _BE2 。V _BE1 And V' _BE1 Difference of delta V _BE Is a positive temperature coefficient voltage. The voltage with positive temperature coefficient is output by an operational amplifier to obtain alpha times of delta V _BE Voltage V of positive temperature coefficient _PTAT ，V _PTAT Can be expressed by the following formula (2):

V _PTAT ＝αΔV _BE (2)

for example, a bipolar transistor A ₂ Upper generated negative temperature coefficient voltage V _BE2 And positive temperature coefficient voltage V _PTAT By additive combination, a reference voltage V which is relatively insensitive to temperature can be obtained _REF E.g. V _REF Can be expressed by the following formula (3):

V _REF ＝V _BE2 +αΔV _BE (3)

for example, a reference voltage V generated by a bandgap reference circuit _REF And positive temperature coefficient voltage V _PTAT When the temperature coefficient mu is input into an ADC which is designed properly, the temperature coefficient mu with positive variation relation with absolute temperature can be obtained. In combination with equation (2) and equation (3), the temperature coefficient μ can be expressed by the following equation (4):

then, the temperature in centigrade value can be obtained by linearizing μ, as shown in the following equation (5):

T _out ＝Aμ+B (5)

for example, by subjecting the temperature coefficient μ to scaling processing or the like such as that shown in fig. 1B, a desired output value Dout (e.g., a celsius temperature value Tout) can be obtained.

FIG. 1C is a graph of temperature coefficient versus temperature generated by a temperature sensing circuit. For example, as shown in fig. 1C, the axis of abscissa in fig. 1C represents the celsius temperature value T, and the axis of ordinate represents the temperature coefficient μ generated by the circuit of the temperature sensor, for example, corresponding to the above formula (5), when μ is taken from 0 to 1, the corresponding temperature range is about 0K to 600K, so to obtain the celsius temperature value, a ≈ 600 ℃/K and B ≈ 273 ℃ are required, and at this time, the μ value may not be well matched with the input dynamic range of the ADC.

As shown in fig. 1C, the temperature coefficient μ is proportional to the celsius value T. For example, a reference voltage (V) _REF ) Taking typical value of 1.2V, base-emitter voltage (V) of triode _BE ) The temperature coefficient of (a) is typically-1.5 mV/deg.C. In this case, as shown in fig. 1C, the temperature coefficient μ is about 0.39 when the celsius value T is-40℃, and the temperature coefficient μ is about 0.66 when the celsius value T is 125℃. Ideally, however, it is desirable that the dynamic range of the temperature coefficient μ should vary linearly from 0 to 1 as the celsius value varies linearly from-40 c to 125 c. Therefore, as shown in fig. 1C, in the temperature sensor of fig. 1B, for example, the temperature coefficient μ is used as an input of the ADC to a subsequent module (e.g., scaling module), and only less than 30% of the dynamic range is used, so that the number of significant bits of the ADC is directly lost, limiting the measurement accuracy.

Fig. 2 is a schematic diagram of a bandgap reference circuit according to at least one embodiment of the present disclosure.

For example, as shown in fig. 2, the bandgap reference circuit 100 includes a ptc current generating module 110, a reference voltage generating module 120 and a ptc voltage scaling module 130.

The ptc current generating module 110 is configured to generate a ptc current and a corresponding first ptc voltage. For example, the positive temperature coefficient current is a Proportional To Absolute Temperature (PTAT) current, and the first positive temperature coefficient voltage is a voltage positively correlated with temperature.

The reference voltage generation module 120 is configured to generate a reference voltage based on the positive temperature coefficient current. For example, the reference voltage generation module 120 may generate a reference voltage insensitive to absolute temperature based on the positive temperature coefficient current and the negative temperature coefficient voltage generated by the internal transistor.

The ptc voltage scaling module 130 is configured to generate a second ptc voltage that is scaled relative to the first ptc voltage based on the ptc current. For example, the second positive temperature coefficient voltage is a voltage which has a positive variation with temperature after amplifying the first positive temperature coefficient voltage.

Fig. 3 is an exemplary circuit diagram of a bandgap reference circuit provided in at least one embodiment of the present disclosure.

For example, as shown in fig. 3, the bandgap reference circuit 100 includes a ptc current generating module 110, a reference voltage generating module 120 and a ptc voltage scaling module 130.

For example, the ptc current generating module 100 includes a first transistor Q1, a second transistor Q2, and a first resistor R1. The emitter of the first transistor Q1 is electrically connected to the first node N1, and the base and the collector of the first transistor Q1 are connected to a first common voltage, for example, electrically connected to a first common voltage terminal, for example, the first common voltage is a ground voltage (GND), and accordingly, the first common voltage terminal is a ground voltage terminal. The base and collector of the second transistor Q2 are coupled to a first common voltage (GND), e.g., electrically coupled to a first common voltage terminal. A first end of the first resistor R1 is electrically connected to the second node N2, and a second end of the first resistor R1 is electrically connected to an emitter of the second transistor Q2.

For example, in the embodiment shown in fig. 3, the first transistor Q1 and the second transistor Q2 are both PNP transistors; alternatively, the first transistor Q1 and the second transistor Q2 may be NPN transistors, which is not limited in this disclosure.

For example, as shown in fig. 3, the ptc current generating module 100 may further include a clamp sub-module 110. The clamping circuit sub-module 110 is connected to a second common voltage, e.g., electrically connected to a second common voltage terminal (V) _dd ) And the clamp sub-module 110 is also electrically connected to the first node N1 and the second node N2. The second common voltage terminal is configured to receive a second common voltage, such as a supply voltage V _dd . Clamping electricityThe way sub-module 110 adjusts the potentials of the first node N1 and the second node N2 with respect to the first common voltage (GND) to be equal.

For example, there are multiple implementations of the clamp circuit sub-module 110, and in the illustrated example, the clamp circuit sub-module 110 includes a first switching transistor M1, a second switching transistor M2, and a comparison circuit. The first input (-) of the comparator circuit is electrically connected to the first node N1, the second input (+) of the comparator circuit is electrically connected to the second node N2, and the output of the comparator circuit is electrically connected to the fifth node N5. The first switching transistor M1 is electrically connected to the second common voltage terminal (V) _dd ) And a first node N1, and a second switching transistor M2 is electrically connected to a second common voltage terminal (V) _dd ) And a second node N2. The gates of the first and second switching transistors M1 and M1 are electrically connected directly and to the fifth node N5.

For example, the comparison circuit compares the high and low of the two input voltages inputted from the first input terminal (-) and the second input terminal (+) and thereby changes the output voltage outputted from the output terminal, which can control the states of the first switching transistor M1, the second switching transistor M2, for example, on and off thereof, thereby controlling the respective voltages of the first node N1 and the second node N2, so that the first switching transistor M1, the second switching transistor M2, and the comparison circuit constitute a negative feedback circuit, adjusting the potentials of the first node N1 and the second node N2 with respect to the first common voltage (GND) to be equal. For example, the comparison circuit may be, for example, the operational amplifier in fig. 3, or may be other electronic components capable of implementing a voltage clamping function, which is not limited in this respect by the embodiments of the present disclosure.

For example, the base-emitter voltage V of the first transistor Q1 _BE1 And the base-emitter voltage V of the second transistor Q2 _BE2 Respectively, have a negative temperature coefficient. For example, the first transistor Q1 and the second transistor Q2 have different gains and operate at a proportional current density, V _BE1 And V _BE2 Difference value Δ V of _BE With positive variation of absolute temperature, i.e. first positive-temperature-coefficient voltage Δ V having a positive temperature coefficient _BE . Due to the first node N1 and the second nodeThe potential of the point N2 is set to be equal to the first common voltage (GND), and the voltage across the first resistor R1 is V _BE1 And V _BE2 I.e. the first positive temperature coefficient voltage deltav _BE . Therefore, a positive temperature coefficient current I is generated on the first resistor R1 _ptat ，I _ptat Can be expressed by the following equation (6):

I _ptat ＝ΔV _BE /R1 (6)

for example, as shown in fig. 3, the reference voltage generating module 120 includes a first mirror circuit module 121 and a first voltage generating module 122. The first mirror circuit module 121 is configured to copy the ptc current I according to a first ratio _ptat Obtaining a first replica current I ₁ . The first voltage generation module 122 is configured to generate the first replica current I ₁ Generating a reference voltage V _ref 。

For example, there are various implementations of the first mirror circuit block 121, and as in the example shown in fig. 3, the first mirror circuit block 121 includes a third switching transistor M3, and the third switching transistor M3 may be used for current replication, such as mirror replication. The gate of the third switching transistor M3 is electrically connected to the fifth node N5, and the third switching transistor M3 is electrically connected to the second common voltage terminal (V) _dd ) And a third node N3.

For example, since the gate of the third switching transistor M3 and the gate of the second switching transistor M2 are electrically connected through the fifth node N5, the state of the third switching transistor M3 is also controlled by the voltage of the fifth node N5 (i.e., the output voltage of the comparison circuit). The third switching transistor M3 may replicate the ptc current I on the second switching transistor M2 in a first ratio _ptat To obtain a first replica current I ₁ . For example, the first ratio depends on the width-to-length ratios of the third switching transistor M3 and the second switching transistor M2. For example, when the width-to-length ratios of the third switching transistor M3 and the second switching transistor M2 are the same, the first ratio is 1, i.e., I ₁ ＝I _ptat 。

For example, as shown in fig. 3, the first voltage generating module 122 includes a second resistor R2 and a third transistor Q3, a first end of the second resistor R2 is electrically connected to the third node N3, a second end of the second resistor R2 is electrically connected to an emitter of the third transistor Q3, and a base and a collector of the third transistor Q3 are connected to the first common voltage (GND). For example, the third transistor Q3 is of the same type as the first transistor Q1, for example, both are PNP transistors as shown in fig. 3, or both may be NPN transistors, which is not limited in this embodiment of the disclosure.

For example, the first replica current I has a positive temperature variation ₁ Flows through the second resistor R2 to generate a voltage delta V 'in the positive variation relation with the temperature on the second resistor R2' _BE ，ΔV’ _BE ＝I ₁ XR 2. Due to the base-emitter voltage V of the third transistor Q3 _BE3 With negative temperature coefficient, the third node N3 generates a reference voltage V insensitive to absolute temperature _ref . For example, when the first ratio is 1, I ₁ ＝I _ptat In combination with the formula (6), V _ref Can be expressed by the following formula (7):

V _ref ＝V _BE3 +ΔV _B ′ _E ＝V _BE3 +I _ptat ×R2＝V _BE +ΔV _BE ×R2/R1 (7)

for example, as shown in fig. 3, the ptc voltage scaling module 130 includes a second mirror circuit module 131 and a second voltage generation module 132. The second mirror module 131 is configured to replicate the PTC current I at a second ratio _ptat To obtain a second replica current I ₂ . The second voltage generation module 132 is configured to generate a second replica current I ₂ Generating a voltage Δ V with respect to a first positive temperature coefficient _BE The scaled second positive temperature coefficient voltage V _ PTAT.

For example, as shown in fig. 3, the second mirror circuit block 131 includes a fourth switching transistor M4, and the fourth switching transistor M4 may be used for current copying, such as mirror copying. A gate of the fourth switching transistor M4 is electrically connected to the fifth node N5, and the fourth switching transistor M4 is electrically connected to the second common voltage terminal (V) _dd ) And a fourth node N4 for copying the positive temperature coefficient current in a second proportion to obtain a second copied current.

For example, due to the fourth switching transistorThe gate of M4 and the gate of the second switching transistor M2 are electrically connected through the fifth node N5, whereby the state of the fourth switching transistor M4 is also controlled by the voltage of the fifth node N5 (i.e., the output voltage of the comparison circuit). The fourth switching transistor M4 may replicate the positive temperature coefficient current I on the second switching transistor M2 in a second ratio _ptat To obtain a second replica current I ₂ . For example, the second ratio depends on the width-to-length ratio of the fourth switching transistor M4 and the second switching transistor M2. For example, when the width-to-length ratios of the fourth switching transistor M4 and the second switching transistor M2 are the same, the second ratio is 1, i.e., I ₂ ＝I _ptat 。

For example, as shown in fig. 3, the second voltage generating module 132 includes a third resistor R3. The first end of the third resistor R3 is electrically connected to the fourth node N4, and the second end of the third resistor R3 is connected to the first common voltage (GND).

For example, the second replica current I has a positive temperature variation ₂ The second positive temperature coefficient voltage V _ PTAT ═ I flowing through the third resistor R3 and having a positive temperature coefficient relationship with temperature is generated at the third resistor R3 ₂ XR 3. For example, when the second ratio is 1, I ₂ ＝I _ptat In conjunction with equation (6), V _ PTAT can be represented by equation (8) as follows:

for example, when R3 is greater than R1, the second positive temperature coefficient voltage V _ PTAT is equivalent to the first positive temperature coefficient voltage Δ V _BE By multiplying by a factor greater than 1, i.e. effecting a first positive temperature coefficient voltage Δ V _BE Amplification of (1); conversely, if desired, when R3 is less than R1, the second positive temperature coefficient voltage V _ PTAT is equivalent to the first positive temperature coefficient voltage Δ V _BE By multiplying by a factor less than 1, i.e. effecting a first positive temperature coefficient voltage Δ V _BE The reduction in (2). Also, in this circuit, the resistance value of R3 is a selectively settable term without being limited to other factors. In addition, the second positive temperature coefficient voltage V _ PTAT which is generated on the third resistor R3 and has positive variation relation with the temperatureTo be further processed, for example further amplified by an amplifying circuit.

Fig. 4 is a schematic diagram of a temperature sensing circuit according to at least one embodiment of the present disclosure.

For example, as shown in fig. 4, the temperature sensing circuit 200 includes a bandgap reference circuit 100, such as shown in fig. 2 or 3, and a calculation module 210. In embodiments such as that of FIG. 3, the bandgap reference circuit 100 outputs a reference voltage V that is insensitive to temperature variations _ref And a voltage Δ V with respect to a positive temperature coefficient _BE The amplified second positive temperature coefficient voltage V _ PTAT. The calculation module 210 is configured to receive a reference voltage V _ref And a second positive temperature coefficient voltage V _ PTAT based on the reference voltage V _ref And the second positive temperature coefficient voltage V _ PTAT outputs a sensing result related to the temperature T to be measured.

For example, the calculation module 210 may be an ADC. The sensing result output by the ADC and related to the temperature T to be measured can be a temperature coefficient μ in a positive variation relationship with absolute temperature. For example, in combination with equation (4), equation (6), equation (7), and equation (8), the temperature coefficient μmay be expressed by equation (9) as follows:

fig. 5 is a graph of an example temperature coefficient versus temperature generated by a temperature sensing circuit according to at least one embodiment of the present disclosure.

For example, as shown in fig. 5, the axis of abscissa in fig. 5 represents the celsius temperature value T, and the axis of ordinate represents the temperature coefficient μ. The conventional curve is, for example, a curve of a relationship between the temperature coefficient μ and the celsius temperature value T in fig. 1C, and the expanded curve is, for example, a curve of a relationship between the temperature coefficient μ and the celsius temperature value T generated by the temperature sensing circuit in fig. 4. For example, the reference voltage is typically 1.2V, and the temperature coefficient of the base-emitter voltage of the triode is typically-1.5 mV/deg.C. In this case, as shown in fig. 5, when the celsius temperature value is linearly changed from-40 ℃ to 125 ℃, the dynamic range of the temperature coefficient μ of the conventional curve is only less than 30% and the dynamic range of the temperature coefficient μ of the expanded curve is expanded to 40% relative to the dynamic range of the temperature coefficient μ e [0,1] in the ideal case.

In at least one embodiment of the present disclosure, a temperature sensing circuit model for PVT simulation can be obtained by a temperature sensing circuit as shown in fig. 4. The PVT simulation of the temperature sensing circuit model can obtain a simulation curve of the relationship between the voltage V (for example, the voltage V corresponds to the temperature coefficient μ and has a positive variation relationship with the absolute temperature) and the temperature T. Comparing the simulated curve with a standard curve (e.g., a standard curve with zero temperature error in an ideal case), the temperature error of the simulated curve in the whole temperature range (e.g., -40 to 125 ℃) can be obtained. Therefore, by selecting a most appropriate calibration curve, temperature error over the entire PVT range can be minimized.

For example, since a transistor (e.g., BJT) itself is affected by various non-ideal factors, the non-linearity error of the voltage generated thereon is large. Therefore, in order to obtain the most suitable standard curve, a multi-order formula calculation is usually required, so that the calculation complexity is increased, and the calculation efficiency is reduced.

At least one embodiment of the present disclosure provides a temperature error detection method for a temperature sensor based on a bandgap reference circuit. The temperature error detection method comprises the following steps: acquiring a temperature sensing circuit model parameter; obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters; obtaining a first parameter and a second parameter from the temperature coefficient simulation curve; obtaining a first-order standard curve based on the first parameter and the second parameter; and obtaining the temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

Embodiments of the present disclosure also provide an apparatus, device, or storage medium corresponding to performing the above temperature error detection method.

According to the temperature error detection method, the temperature error detection device, the temperature error detection equipment and the storage medium, the first-order standard curve is obtained based on the temperature coefficient simulation curve obtained by simulating the temperature sensing circuit, complex multi-order calculation is not needed, and therefore the temperature error can be calculated by a linearization method, calculation complexity is reduced, calculation cost is saved, and calculation efficiency is improved.

At least one embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the same reference numerals in different figures will be used to refer to the same elements that have been described.

Fig. 6 is an exemplary flowchart of a temperature error detection method of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure.

For example, as shown in fig. 6, a temperature error detection method provided by at least one embodiment of the present disclosure is based on a temperature sensor of a bandgap reference circuit, such as shown in fig. 2 or fig. 3. For example, the temperature error detection method includes the following steps S10 to S50.

Step S10: acquiring a temperature sensing circuit model parameter;

step S20: obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters;

step S30: obtaining a first parameter and a second parameter from the temperature coefficient simulation curve;

step S40: obtaining a first-order standard curve based on the first parameter and the second parameter;

step S50: and obtaining the temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

For example, in step S10, the temperature sensing circuit model parameters are obtained by a temperature sensing circuit such as that shown in fig. 4, which includes a bandgap reference circuit such as that shown in fig. 2 or 3.

For example, in step S20, a temperature sensing circuit model is built based on the obtained temperature sensing circuit model parameters to perform one or more PVT simulations, thereby obtaining a temperature coefficient simulation curve. For example, the temperature coefficient simulation curve may be a simulation curve of a voltage V (for example, the voltage V corresponds to the temperature coefficient μ and has a positive variation with absolute temperature) versus a temperature T.

For example, in step S30, the first parameter and the second parameter are obtained from the temperature coefficient simulation curve to obtain a first order standard curve based on the first parameter and the second parameter in step S40. For example, the first parameter and the second parameter may be a slope and an intercept of the first-order standard curve, respectively, or may be other parameters capable of obtaining the first-order standard curve, which is not limited in this respect by the embodiments of the present disclosure.

For example, in step S50, a temperature error is obtained based on the temperature coefficient simulation curve and the first-order standard curve. And comparing the temperature coefficient simulation curve with the first-order standard curve to obtain the temperature error of the temperature coefficient simulation curve in the whole target temperature range (such as-40-125 ℃).

Fig. 7 is an exemplary flowchart of an example of step S20 in fig. 6.

For example, based on the temperature sensing circuit model parameters obtained in step S10, a temperature coefficient simulation curve may be obtained. For example, as shown in fig. 7, step S20 in the temperature error detection method shown in fig. 6 includes the following steps S210 to S230.

Step S210: obtaining a reference voltage and a positive temperature coefficient voltage based on a temperature sensing circuit model;

step S220: carrying out at least one first simulation by using a reference voltage and a positive temperature coefficient voltage to obtain at least one first temperature coefficient simulation curve;

step S230: and obtaining a temperature coefficient simulation curve based on the at least one first temperature coefficient simulation curve.

For example, a temperature sensing circuit model for PVT simulation can be obtained by a temperature sensing circuit such as that shown in fig. 4. In step S210, a reference voltage and a positive temperature coefficient voltage may be obtained based on the temperature sensing circuit model. For example, the reference voltage may be a reference voltage V insensitive to temperature variations, such as the output of the bandgap reference circuit of FIG. 3 _ref The PTC voltage may be, for example, the relative PTC voltage Δ V output by the bandgap reference circuit of FIG. 3 _BE The amplified second positive temperature coefficient voltage V _ PTAT.

For example, in step S220, the reference voltage V is used _ref And carrying out at least one first simulation on the positive temperature coefficient voltage V _ PTAT to obtain at least one first temperature coefficient simulation curve.For example, the first temperature coefficient analog curve may be an analog curve of the relationship between the voltage V and the temperature T. For example, in combination with equation (9), the voltage V corresponds to the temperature coefficient μ and has a positive variation with the absolute temperature.

For example, in step S230, at least one first temperature coefficient simulation curve is averaged to obtain a temperature coefficient simulation curve. For example, the temperature coefficient analog curve is an analog curve of a relationship between a voltage V and a temperature T, and the voltage V corresponds to the temperature coefficient μ and has a positive variation relationship with the temperature T. For example, the temperature coefficient simulation curve may be a convex function or a concave function, and ideally may be a straight line having a slope greater than 0. For example, in the temperature coefficient simulation curve, the temperature T is in the range of-40 to 125 ℃.

Fig. 8 is an exemplary flowchart of an example of step S30 in fig. 6.

For example, based on the temperature coefficient simulation curve obtained in step S20 in fig. 6, the first parameter and the second parameter may be obtained for obtaining the first-order standard curve in step S40. For example, as shown in fig. 8, step S30 in the temperature error detection method shown in fig. 6 includes the following steps S310 to S320.

Step S310: performing first processing on the temperature coefficient simulation curve to obtain a first parameter;

step S320: and carrying out second processing on the temperature coefficient simulation curve to obtain a second parameter.

For example, the first parameter is, for example, the slope of a first order standard curve, and the second parameter is, for example, the intercept of the first order standard curve. For example, the first order standard curve is obtained through step S40 and is used for comparison with the temperature coefficient simulation curve to obtain the temperature error.

For example, in step S310, performing the first process on the temperature coefficient simulation curve obtained by, for example, steps S210 to S230 in fig. 7 to obtain the first parameter includes: deriving the temperature coefficient simulation curve to obtain a slope waveform of the temperature coefficient simulation curve; the slope waveform is subjected to a third process to obtain a first parameter.

For example, the slope waveform is subjected to a third process to obtain a first parameter packetComprises the following steps: acquiring a first threshold and a second threshold of a slope waveform; for example, a first threshold of the slope waveform and a second threshold of the slope waveform are averaged to obtain the first parameter. For example, the first threshold may be a maximum value k of the slope waveform _max The second threshold may be a minimum value k of the slope waveform _min When the first parameter is the maximum value k of the slope waveform _max And the minimum value k _min The first parameter k may be represented by the following equation (10):

in the above-described embodiments of the present disclosure, the first parameter is not limited to being the maximum value k of the slope waveform _max And the minimum value k _min The average value k of (2) may be, for example, a maximum value k _max And the minimum value k _min Other weighted sums (the average values correspond to respective weights equal to 1/2).

For example, in step S320, performing the second processing on the temperature coefficient simulation curve obtained through, for example, steps S210 to S230 in fig. 7 to obtain the second parameter includes: obtaining a first intercept based on the first parameter and the temperature coefficient simulation curve; obtaining a second intercept based on the first parameter and the temperature coefficient simulation curve; the first intercept and the second intercept are averaged to obtain a second parameter.

For example, when the temperature coefficient simulation curve is a convex function, the first intercept may be a maximum intercept b obtained based on the first parameter and the temperature coefficient simulation curve _max The second intercept may be a minimum intercept b obtained based on the first parameter and the temperature coefficient simulation curve _min (ii) a When the temperature coefficient simulation curve is a concave function, the first intercept may be a minimum intercept b obtained based on the first parameter and the temperature coefficient simulation curve _min The second intercept may be a maximum intercept b obtained based on the first parameter and the temperature coefficient simulation curve _max . For example, the second parameter may be the maximum intercept b _max And minimum intercept b _min The second parameter b can be expressed by the following formula (11):

in the above-described embodiments of the present disclosure, the second parameter is not limited to be the maximum intercept b _max And minimum intercept b _min The average value b of (b) may be, for example, a maximum value k _max And the minimum value k _min Other weighted sums (the average values correspond to respective weights equal to 1/2).

For example, in step S40, the first-order standard curve obtained based on the first parameter and the second parameter may be represented by the following formula (12):

V′(T)＝kT+b (12)

for example, when the ratio of the voltage V' (T) to its corresponding temperature coefficient μ is 1, the temperature T can be obtained by combining equation (5) and equation (12), and can be expressed by equation (13) as follows:

FIG. 9A is a schematic diagram illustrating an example of steps S30-S40 in FIG. 6.

For example, as shown in fig. 9A, the temperature coefficient simulation curve obtained by, for example, steps S210 to S230 in fig. 7 is a convex function. For example, in order to obtain the first parameter by, for example, step S310 in fig. 8, the temperature coefficient simulation curve may be differentiated to obtain a slope waveform of the temperature coefficient simulation curve; obtaining the maximum value k of the slope waveform _max And the minimum value k _min (ii) a The maximum value k of the slope waveform is obtained by combining equation (10) _max And the minimum value k _min To obtain the first parameter k.

For example, in order to obtain the second parameter by, for example, step S320 in fig. 8, the first intercept b1 and the second intercept b2 may be obtained based on the first parameter and the temperature coefficient simulation curve, and then the first intercept b1 and the second intercept b2 are averaged to obtain the second parameter b.

For example, as shown in FIG. 9A, to obtainA first intercept b1, wherein a first straight line tangent to the temperature coefficient simulation curve can be obtained based on the first parameter k and the temperature coefficient simulation curve; the first intercept b1 can be obtained based on the intersection of the first straight line with the ordinate axis of the temperature coefficient simulation curve. Since the temperature coefficient simulation curve shown in FIG. 9A is a convex function, the first intercept b1 is the maximum intercept b _max 。

For example, as shown in fig. 9A, in order to obtain the second intercept b2, first, the first threshold and the second threshold of the temperature coefficient simulation curve may be acquired. For example, the first threshold is the highest point of the temperature coefficient simulation curve (e.g., N1 in fig. 9A), and the second threshold is the lowest point of the temperature coefficient simulation curve (e.g., N2 in fig. 9A). For example, as shown in fig. 9A, a second straight line intersecting the first threshold N1 may be obtained based on the first parameter k and the first threshold N1, that is, the slope of the second straight line is k and the second straight line passes through N1; the third intercept b3 can be obtained based on the intersection of the second straight line with the ordinate axis of the temperature coefficient simulation curve. For example, as shown in fig. 9A, a third straight line intersecting the second threshold N2 may be obtained based on the first parameter k and the second threshold N2, that is, the slope of the third straight line is k and the third straight line passes through N2; the fourth intercept b4 can be obtained based on the intersection of the third straight line with the ordinate axis of the temperature coefficient simulation curve.

For example, the second intercept b2 may be obtained by comparing the third intercept b3 and the fourth intercept b 4. For example, when the temperature coefficient simulation curve is a convex function, the second intercept b2 is the third intercept b3 in response to the third intercept b3 being less than the fourth intercept b 4; the second intercept b2 is the fourth intercept b4 in response to the fourth intercept b4 being less than the third intercept b 3. For example, as shown in fig. 9A, the fourth intercept b4 is smaller than the third intercept b3, i.e., the second intercept b2 is the fourth intercept b 4. The second intercept b2 is the minimum intercept b obtained based on the first parameter and the temperature coefficient simulation curve _min 。

For example, the average of the first intercept b1 and the second intercept b2 obtained by combining equation (11) is the second parameter b. For example, in step S40, based on the first parameter k and the second parameter b in combination with equation (12), a first-order standard curve with a slope k and an intercept b may be obtained.

FIG. 9B is a schematic diagram illustrating another example of steps S30-S40 in FIG. 6

For example, as shown in fig. 9B, the temperature coefficient simulation curve obtained by, for example, steps S210 to S230 in fig. 7 is a concave function. For example, in order to obtain the first parameter by, for example, step S310 in fig. 8, the temperature coefficient simulation curve may be differentiated to obtain a slope waveform of the temperature coefficient simulation curve; obtaining the maximum value k of the slope waveform _max And the minimum value k _min (ii) a The maximum value k of the slope waveform is obtained by combining equation (10) _max And the minimum value k _min To obtain the first parameter k.

For example, in order to obtain the second parameter by, for example, step S320 in fig. 8, the first intercept b1 and the second intercept b2 may be obtained based on the first parameter and the temperature coefficient simulation curve, and then the first intercept b1 and the second intercept b2 may be averaged to obtain the second parameter b.

For example, as shown in fig. 9B, in order to obtain the first intercept B1, a first straight line tangent to the temperature coefficient simulation curve may be obtained based on the first parameter k and the temperature coefficient simulation curve; the first intercept b1 can be obtained based on the intersection of the first straight line with the ordinate axis of the temperature coefficient simulation curve. Since the temperature coefficient simulation curve shown in FIG. 9A is a concave function, the first intercept b1 is the minimum intercept b _min 。

For example, as shown in fig. 9B, in order to obtain the second intercept B2, first, a first threshold and a second threshold of the temperature coefficient simulation curve may be obtained. For example, the first threshold value is the highest point of the temperature coefficient simulation curve (e.g., N1 'in fig. 9B), and the second threshold value is the lowest point of the temperature coefficient simulation curve (e.g., N2' in fig. 9B). For example, as shown in fig. 9B, based on the first parameter k and the first threshold N1 ', a second straight line intersecting the first threshold N1 ' may be obtained, that is, the slope of the second straight line is k and the second straight line passes through N1 '; the third intercept b3 can be obtained based on the intersection of the second straight line with the ordinate axis of the temperature coefficient simulation curve. For example, as shown in fig. 9B, a third straight line intersecting the second threshold N2 ' may be obtained based on the first parameter k and the second threshold N2 ', that is, the slope of the third straight line is k and the third straight line passes through N2 '; the fourth intercept b4 can be obtained based on the intersection of the third straight line with the ordinate axis of the temperature coefficient simulation curve.

For example, the second intercept b2 may be obtained by comparing the third intercept b3 and the fourth intercept b 4. For example, when the temperature coefficient simulation curve is a concave function, the second intercept b2 is the third intercept b3 in response to the third intercept b3 being greater than the fourth intercept b 4; the second intercept b2 is the fourth intercept b4 in response to the fourth intercept b4 being greater than the third intercept b 3. For example, as shown in fig. 9B, the third intercept B3 is greater than the fourth intercept B4, i.e., the second intercept B2 is the third intercept B3. The second intercept b2 is the maximum intercept b obtained based on the first parameter and the temperature coefficient simulation curve _max 。

FIG. 10 is an exemplary flowchart of one example of step S50 in FIG. 6; fig. 11 is a schematic view of an example of fig. 10.

For example, based on the temperature coefficient simulation curve obtained in step S20 in fig. 6 and the first-order standard curve obtained in step S40, a temperature error may be obtained. For example, as shown in fig. 10, step S50 in the temperature error detection method shown in fig. 6 includes the following steps S510 to S540.

Step S510: reading a first temperature;

step S520: obtaining a simulated temperature coefficient based on the first temperature and the temperature coefficient simulation curve;

step S530: obtaining a first standard temperature coefficient based on the first temperature and the first-order standard curve;

step S540: a temperature error is obtained based on the simulated temperature coefficient, the first standard temperature coefficient, and the first parameter.

For example, an example of a specific process of calculating the temperature error in fig. 10 is shown in fig. 11. For example, as shown in fig. 11, in step S510, a first temperature T1 is read; in step S520, a simulated temperature coefficient V (T1) is obtained based on the first temperature T1 and a temperature coefficient simulation curve, i.e., the simulated temperature coefficient V (T1) is a voltage value of an ordinate on the temperature coefficient simulation curve corresponding to the first temperature T1, for example, the temperature coefficient simulation curve obtained by the steps shown in fig. 7; in step S530, a first standard temperature coefficient V '(T1) is obtained based on the first temperature T1 and a first-order standard curve, for example, a first-order standard curve obtained based on the first parameter k and the second parameter b shown in fig. 8, that is, the first standard temperature coefficient V' (T1) is a voltage value of the ordinate on the first-order standard curve corresponding to the first temperature T1; in step S540, a temperature error is obtained based on the simulated temperature coefficient V (T1), the first standard temperature coefficient V' (T1), and the first parameter k.

For example, as shown in fig. 11, in step S540, the simulated temperature coefficient V (T1) corresponds to the second standard temperature coefficient V '(T2) on the first-order standard curve, and V (T1) ═ V' (T2). For example, the abscissa temperature value on the first-order standard curve corresponding to the second standard temperature coefficient V' (T2) is the second temperature T2, and the difference between the second temperature T2 and the first temperature T1 is the temperature error. For example, in conjunction with equation (12), the temperature error can be expressed by equation (14) as follows:

for example, in step S540, it can be seen from the equation (14) that, when the first temperature T1 is an arbitrary temperature value T, the temperature error can be obtained based on the simulated temperature coefficient V (T), the first standard temperature coefficient V' (T), and the first parameter k. For example, in combination with equation (12) and equation (14), the temperature error of any temperature value T can be expressed by the following equation (15):

in at least one embodiment of the present disclosure, for example, the exemplary temperature error detection method shown in fig. 6 to 11 obtains a first-order standard curve based on a temperature coefficient simulation curve obtained by simulating a temperature sensing circuit, and does not need to perform complex multi-order calculation, so that a temperature error can be calculated by a linearization method, thereby reducing the calculation complexity, saving the calculation cost, and improving the calculation efficiency.

Fig. 12 is another exemplary flowchart of step S30 in fig. 6.

For example, in some examples, in the temperature error detection method shown in fig. 6, a voltage value V (T1) corresponding to one temperature value T1 may also be actually measured in, for example, the temperature sensing circuit shown in fig. 4, so as to calibrate the first-order standard curve. For example, the above method is referred to as one-point calibration; correspondingly, the method shown in, for example, fig. 9A or 9B is referred to as calibration-less, which does not require actual measurement of the temperature sensing circuit. For example, in one-point calibration, the process of obtaining the first parameter k from the temperature coefficient simulation curve is the same as that in step S310 in fig. 8; the process of obtaining the second parameter b from the temperature coefficient simulation curve needs to use the voltage value V (T1) corresponding to the actually measured temperature value T1.

For example, as shown in fig. 12, in the one-point calibration, in order to obtain the second parameter b, step S30 in the temperature error detection method shown in fig. 6 further includes the following steps S331 to S332.

Step S331: measuring to obtain a first temperature coefficient of the temperature sensing circuit;

step S332: a modified second parameter is obtained based on the first parameter and the first temperature coefficient.

For example, in step S331, a first temperature coefficient, that is, a voltage value V corresponding to an actually measured temperature value T1 is obtained by actually measuring a temperature sensing circuit shown in fig. 4, for example (T1).

For example, in step S332, the corrected second parameter b' may be obtained based on the first parameter k and the first temperature coefficient V (T1). For example, the slope of the first order standard curve is k, and the first order standard curve passes through the actual measurement point (T1, V (T1)). In conjunction with equation (12), the modified second parameter b ═ V (T1) -kV1 can be obtained, and a one-point calibrated first-order standard curve can be obtained. The first order calibration curve for this point calibration can be expressed by the following equation (16):

V′(T)＝kT+[V(T1)-kT1] (16)

for example, when the ratio of the voltage V' (T) to its corresponding temperature coefficient μ is 1, the temperature T, which can be expressed by the following equation (17), can be obtained by combining equation (5) and equation (16):

for example, the temperature error corresponding to the first-order standard curve calibrated at one point can be obtained based on the method shown in fig. 10 or fig. 11. Combining equation (15) and equation (16), the temperature error corresponding to the first-order calibration curve of the point calibration can be expressed by the following equation (18):

in at least one embodiment of the present disclosure, for example, the exemplary temperature error detection method shown in fig. 12 performs a one-point calibration on a first-order standard curve obtained from a temperature coefficient simulation curve obtained by simulating a temperature sensing circuit, so as to improve the accuracy of the first-order standard curve, and thus improve the accuracy of the obtained temperature error.

Fig. 13 is still another exemplary flowchart of step S30 in fig. 6.

For example, in some examples, in the temperature error detection method shown in fig. 6, voltage values V (T1) and V (T2) corresponding to two temperature values T1 and T2 may also be actually measured in, for example, the temperature sensing circuit shown in fig. 4, so as to calibrate the first-order standard curve. For example, the above method is referred to as two-point calibration; correspondingly, the method shown in, for example, fig. 9A or 9B is referred to as calibration-less, which does not require actual measurement of the temperature sensing circuit. For example, in the two-point calibration, the process of obtaining the first parameter k and the second parameter b from the temperature coefficient simulation curve needs to use the voltage value V (T1) corresponding to the actually measured temperature value T1 and the voltage value V (T2) corresponding to the temperature value T2.

For example, as shown in fig. 13, in the two-point calibration, in order to obtain the first parameter k and the second parameter b, step S30 in the temperature error detection method shown in fig. 6 further includes the following steps S341 to S342.

Step S341: measuring a first temperature coefficient of the temperature sensing circuit and a second temperature coefficient different from the first temperature coefficient;

step S342: a modified first parameter and a modified second parameter are obtained based on the first temperature coefficient and the second temperature coefficient.

For example, in step S341, a first temperature coefficient, that is, a voltage value V (T1) corresponding to the actually measured temperature value T1, and a second temperature coefficient, that is, a voltage value V (T2) corresponding to the actually measured temperature value T2 are obtained by actually measuring, for example, a temperature sensing circuit shown in fig. 4.

For example, in step S342, the corrected first parameter k ″ and the corrected second parameter b ″ may be obtained based on the first temperature coefficient V (T1) and the first temperature coefficient V (T2). For example, a first order calibration curve passes through the actual measurement point (T1, V (T1)) and the actual measurement point (T2, V (T2)). In combination with equation (12), a modified first parameter may be obtained

Modified second parameter

And a first order standard curve for a two point calibration can be obtained. The first order standard curve of the two-point calibration can be expressed by the following equation (19):

for example, when the ratio of the voltage V' (T) to its corresponding temperature coefficient μ is 1, the temperature T can be obtained by combining equation (5) and equation (19), and can be expressed by equation (20) as follows:

for example, the temperature error corresponding to the first-order standard curve of the two-point calibration can be obtained based on the method shown in fig. 10 or fig. 11. Combining equation (15) and equation (19), the temperature error corresponding to the first-order calibration curve of the two-point calibration can be represented by the following equation (21):

in at least one embodiment of the present disclosure, for example, the exemplary temperature error detection method shown in fig. 13 performs two-point calibration on a first-order standard curve obtained from a temperature coefficient simulation curve obtained by simulating a temperature sensing circuit, so as to further improve the accuracy of the first-order standard curve, thereby improving the accuracy of the obtained temperature error.

Fig. 14 is a schematic diagram of an example of a temperature error detection method of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure.

For example, as shown in fig. 14, it is achieved by a bandgap reference circuit such as that of fig. 2 or 3 that the pair of first positive temperature coefficient voltages Δ V _BE Thereby increasing the dynamic range of the temperature coefficient μ; a first-order standard curve can be obtained by adopting a method of no calibration, one-point calibration and two-point calibration respectively; based on the first-order standard curve and the temperature coefficient simulation curve obtained in step S20 in fig. 6, temperature errors corresponding to no calibration, one-point calibration, and two-point calibration, respectively, can be obtained.

for example, as shown in fig. 15, the temperature error detection method provided by at least one embodiment of the present disclosure may be divided into three parts.

For example, as shown in FIG. 15, the first part is to expand the dynamic range, i.e., to scale the first positive temperature coefficient voltage Δ V _BE By applying a first positive temperature coefficient voltage Δ V _BE Converted into positive temperature coefficient current I _ptat Based on the positive temperature coefficient current I _ptat Generating a voltage Δ V with respect to a first positive temperature coefficient _BE A scaled second positive temperature coefficient voltage V _ PTAT, which enables avbe multiplied by a coefficient greater than 1, thereby increasing the dynamic range of the temperature coefficient μ;

for example, as shown in fig. 15, the second part is a reference standard line, for example, an optimal standard line is found, that is, a most suitable first-order standard curve is selected as a measuring scale to be compared with the temperature coefficient simulation curve obtained in step S20 in fig. 6. The first parameter (e.g., slope k) and the second parameter (e.g., intercept b) are obtained in combination with no calibration, one point calibration, two point calibration to obtain the most appropriate first order calibration curve to minimize temperature error over the entire PVT range.

For example, in the second part, the first parameter k and the second parameter B may be determined by a method such as that shown in fig. 9A or 9B (simply referred to as an averaging method), and the method is referred to as no calibration. For example, as shown in fig. 9A, if the temperature coefficient simulation curve is a convex function, the maximum value b of b is obtained by a first straight line with a slope k and tangent to the temperature coefficient simulation curve _max (ii) a Respectively making two straight lines with the slope of k through the highest point and the lowest point of the temperature coefficient simulation curve, wherein the smaller value of the two straight lines and the two intersection points of the temperature coefficient simulation curve ordinate axis is the minimum value b of b _min . For example, as shown in fig. 9B, if the temperature coefficient simulation curve is a concave function, the minimum value B of B is obtained by a first straight line with a slope k and tangent to the temperature coefficient simulation curve _min (ii) a Respectively making two straight lines with the slope of k through the highest point and the lowest point of the temperature coefficient simulation curve, wherein the larger value of the two straight lines and two intersection points of the two straight lines and the vertical axis of the temperature coefficient simulation curve is bMaximum value of b _max . For example, a first-order standard curve without calibration may be obtained based on the first parameter k and the second parameter b obtained by the above-described procedure.

For example, in the second section, the first parameter k may also be determined by a method such as that shown in fig. 9A or 9B (simply referred to as an averaging method), the second parameter B may also be determined by a method such as that shown in fig. 12, and this method may be referred to as one-point calibration. For example, a voltage value V (T1) corresponding to the temperature value T1 is obtained by actually measuring a temperature sensing circuit such as that shown in fig. 4, and a straight line having a slope k and passing through an actually measured point (T1, V (T1)) is a first-order standard curve calibrated at one point.

For example, in the second part, the first parameter k and the second parameter b may also be determined by a method such as that shown in fig. 13, and the method is referred to as two-point calibration. For example, a voltage value V (T1) and a voltage value V (T2) corresponding to the temperature value T1 and the temperature value T2, respectively, are obtained by actually measuring the temperature sensing circuit shown in fig. 4, and a straight line passing through the actual measurement point (T1, V (T1)) and the actual measurement point (T2, V (T2)) is a first-order standard curve calibrated at two points.

For example, as shown in FIG. 15, the third section calculates the temperature error for linearization. By comparing the first-order standard curve obtained in the second section with the temperature coefficient simulation curve in combination with equation (15) by a method such as that shown in fig. 10 or fig. 11, temperature errors corresponding to no calibration, one-point calibration, and two-point calibration, respectively, can be obtained in combination with the linearization equation (15).

At least one embodiment of the present disclosure provides a temperature error detection method, such as that shown in fig. 6, fig. 14 or fig. 15, on one hand, the dynamic range of the temperature coefficient μ is increased by a bandgap reference circuit, such as that in fig. 2 or fig. 3; on the other hand, a first-order standard curve is obtained based on a temperature coefficient simulation curve obtained by simulating the temperature sensing circuit, and complex multi-order calculation is not needed, so that the calculation complexity is reduced, the calculation cost is saved, and the calculation efficiency is improved; in addition, one-point calibration or two-point calibration can be selectively used to improve the accuracy of the first-order standard curve, thereby improving the accuracy of the obtained temperature error.

Fig. 16 is a schematic block diagram of a temperature error detection apparatus of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure.

For example, at least one embodiment of the present disclosure provides a temperature error detection device of a temperature sensor based on a bandgap reference circuit. As shown in fig. 16, the temperature error detection apparatus 300 includes an acquisition module 310, a simulation module 320, a processing module 330, and a measurement module 340.

For example, the obtaining module 310 is configured to obtain the temperature sensing circuit model parameters, i.e., the obtaining module 310 may be configured to perform step S10 shown in fig. 6, for example.

For example, the simulation module 320 is configured to obtain a temperature coefficient simulation curve based on the temperature sensing circuit model parameters, i.e., the simulation module 320 may be configured to perform step S20 shown in fig. 6, for example.

For example, the processing module 330 is configured to obtain a first parameter and a second parameter from the temperature coefficient simulation curve, and obtain a first order standard curve based on the first parameter and the second parameter, and obtain a temperature error based on the temperature coefficient simulation curve and the first order standard curve; that is, the processing module 330 may be configured to perform, for example, steps S30-S50 shown in FIG. 6. For example, in the process of executing step S30, the processing module 330 is further configured to perform a first process on the temperature coefficient simulation curve to obtain a first parameter, and perform a second process on the temperature coefficient simulation curve to obtain a second parameter.

For example, the measurement module 340 is configured to measure a first temperature coefficient of the temperature sensing circuit and measure a second temperature coefficient of the temperature sensing circuit different from the first temperature coefficient. That is, the measurement module 340 may be configured to execute, for example, step S331 shown in fig. 12, so as to obtain, in a point calibration, a first temperature coefficient (for example, a voltage value V (T1) corresponding to a temperature value T1) by performing actual measurement on, for example, the temperature sensing circuit shown in fig. 4, at this time, the processing module 330 is further configured to obtain a corrected second parameter based on the first parameter and the first temperature coefficient; the measurement module 340 may be further configured to execute, for example, step S341 shown in fig. 13, so as to obtain the first temperature coefficient and the second temperature coefficient (for example, the voltage value V (T1) corresponding to the temperature value T1 and the voltage value V (T2) corresponding to the temperature value T2) by performing actual measurement on, for example, the temperature sensing circuit shown in fig. 4 in the two-point calibration, at this time, the processing module 330 is further configured to obtain the corrected first parameter and the corrected second parameter based on the first temperature coefficient and the second temperature coefficient. Since details of the operation of the temperature error detection apparatus 300 have been introduced in the above description of the temperature error detection method, such as that shown in fig. 6, the details are not repeated here for brevity, and the related details can refer to the above description of fig. 1 to 15.

It should be noted that the modules in the temperature error detection apparatus 300 shown in fig. 16 may be respectively configured as software, hardware, firmware or any combination of the above for executing specific functions. For example, the modules may correspond to an application specific integrated circuit, to pure software code, or to a combination of software and hardware. By way of example, and not limitation, the device described with reference to fig. 16 may be a PC computer, tablet device, personal digital assistant, smart phone, web application, or other device capable of executing program instructions.

In addition, although the temperature error detection apparatus 300 is described above as being divided into modules for respectively performing the corresponding processes, it is apparent to those skilled in the art that the processes performed by the respective modules may be performed without any specific division of the modules in the apparatus or without explicit demarcation between the modules. Furthermore, the temperature error detection apparatus 300 described above with reference to fig. 16 is not limited to include the above-described modules, but some other modules (e.g., a storage module, a data processing module, etc.) may be added as needed, or the above modules may be combined.

At least one embodiment of the present disclosure also provides a temperature error detecting apparatus of a temperature sensor based on a bandgap reference circuit, the temperature error detecting apparatus including a processor and a memory; the memory includes one or more computer program modules; one or more computer program modules are stored in the memory and configured to be executed by the processor, the one or more computer program modules comprising instructions for implementing the temperature error detection methods provided by the embodiments of the present disclosure described above.

Fig. 17 is a schematic block diagram of a temperature error detection apparatus of a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure.

For example, as shown in fig. 17, the temperature error detection device 400 includes a processor 410 and a memory 420. For example, memory 420 is used to store non-transitory computer-readable instructions (e.g., one or more computer program modules). The processor 410 is configured to execute non-transitory computer readable instructions that, when executed by the processor 410, may perform one or more steps according to the temperature error detection method described above. The memory 420 and the processor 410 may be interconnected by a bus system and/or other form of connection mechanism (not shown).

For example, the processor 410 may be a Central Processing Unit (CPU), a Digital Signal Processor (DSP), or other form of processing unit having data processing capabilities and/or program execution capabilities, such as a Field Programmable Gate Array (FPGA), or the like; for example, the Central Processing Unit (CPU) may be an X86 or ARM architecture or the like. The processor 410 may be a general purpose processor or a special purpose processor that may control other components in the adaptive voltage and frequency adjustment device 400 to perform desired functions.

For example, memory 420 may include any combination of one or more computer program products, which may include various forms of computer-readable storage media, such as volatile memory and/or non-volatile memory. Volatile memory can include, for example, Random Access Memory (RAM), cache memory (or the like). The non-volatile memory may include, for example, Read Only Memory (ROM), a hard disk, an Erasable Programmable Read Only Memory (EPROM), a portable compact disc read only memory (CD-ROM), USB memory, flash memory, and the like. One or more computer program modules may be stored on the computer-readable storage medium and executed by processor 410 to implement the various functions of device 400. Various applications and various data, as well as various data used and/or generated by the applications, etc., may also be stored in the computer-readable storage medium.

It should be noted that, in the embodiments of the present disclosure, reference may be made to the above description of the temperature error detection method provided in at least one embodiment of the present disclosure for specific functions and technical effects of the temperature error detection apparatus 400, and details are not described herein again.

Fig. 18 is a schematic block diagram of another temperature error detection apparatus for a temperature sensor based on a bandgap reference circuit according to at least one embodiment of the present disclosure.

For example, as shown in fig. 18, the temperature error detection apparatus 500 is, for example, suitable for implementing the temperature error detection method provided by the embodiment of the present disclosure. It should be noted that the temperature error detection device 500 shown in fig. 18 is only one example, and does not bring any limitation to the functions and the use range of the embodiment of the present disclosure.

For example, as shown in fig. 18, the temperature error detection apparatus 500 may include a processing device (e.g., a central processing unit, a graphic processor, etc.) 51, the processing device 51 including, for example, a temperature error detection device according to any of the embodiments of the present disclosure, and it may perform various appropriate actions and processes according to a program stored in a Read Only Memory (ROM)52 or a program loaded from a storage device 48 into a Random Access Memory (RAM) 53. In the RAM 53, various programs and data necessary for the operation of the temperature error detection apparatus 500 are also stored. The processing device 51, the ROM 52, and the RAM 53 are connected to each other via a bus 54. An input/output (I/O) interface 55 is also connected to bus 54. Generally, the following devices may be connected to the I/O interface 55: input devices 56 including, for example, a touch screen, touch pad, keyboard, mouse, camera, microphone, accelerometer, gyroscope, etc.; an output device 57 including, for example, a Liquid Crystal Display (LCD), a speaker, a vibrator, and the like; storage devices 58 including, for example, magnetic tape, hard disk, etc.; and a communication device 59. The communication means 59 may allow the temperature error detecting device 500 to communicate with other electronic devices wirelessly or by wire to exchange data.

While fig. 18 illustrates the temperature error detection apparatus 500 having various means, it is to be understood that not all of the illustrated means are required to be implemented or provided, and that the temperature error detection apparatus 500 may alternatively be implemented or provided with more or fewer means.

For detailed description and technical effects of the temperature error detection apparatus 500, reference may be made to the above description related to the temperature error detection method, and details are not repeated here.

For example, as shown in FIG. 19, a storage medium 600 is used to store non-transitory computer readable instructions 610. For example, the non-transitory computer readable instructions 610, when executed by a computer, may perform one or more steps according to the temperature error detection method described above.

For example, the storage medium 600 may be applied to the temperature error detection apparatus 400 described above. For example, the storage medium 600 may be the memory 420 in the temperature error detection apparatus 400 shown in fig. 17. For example, the relevant description about the storage medium 600 can refer to the corresponding description of the memory 420 in the temperature error detection device 400 shown in fig. 17, and is not repeated here.

For the present disclosure, there are the following points to be explained:

(1) in the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are referred to, and other structures may refer to general designs.

(2) Features of the disclosure in the same embodiment and in different embodiments may be combined with each other without conflict.

The above is only a specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present disclosure, and shall be covered by the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A temperature error detection method of a temperature sensor based on a band-gap reference circuit comprises the following steps:

acquiring a temperature sensing circuit model parameter;

obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters;

obtaining a first parameter and a second parameter from the temperature coefficient simulation curve;

obtaining a first order standard curve based on the first parameter and the second parameter;

and obtaining a temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

2. The temperature error detection method of claim 1, wherein the obtaining a first parameter and a second parameter from the temperature coefficient simulation curve comprises:

performing first processing on the temperature coefficient simulation curve to obtain the first parameter;

and carrying out second processing on the temperature coefficient simulation curve to obtain the second parameter.

3. The temperature error detection method according to claim 2, wherein the first processing the temperature coefficient simulation curve to obtain the first parameter includes:

deriving the temperature coefficient simulation curve to obtain a slope waveform of the temperature coefficient simulation curve;

third processing is performed on the slope waveform to obtain the first parameter.

4. The temperature error detection method of claim 3, wherein the third processing of the slope waveform to obtain the first parameter comprises:

acquiring a first threshold and a second threshold of the slope waveform;

a weighted sum of a first threshold of the slope waveform and a second threshold of the slope waveform is taken to obtain the first parameter.

5. The temperature error detection method according to claim 2, wherein the second processing the temperature coefficient simulation curve to obtain the second parameter includes:

obtaining a first intercept based on the first parameter and the temperature coefficient simulation curve;

obtaining a second intercept based on the first parameter and the temperature coefficient simulation curve;

a weighted sum of the first and second intercepts is taken to obtain the second parameter.

6. The temperature error detection method of claim 5, wherein the obtaining a first intercept based on the first parameter and the temperature coefficient simulation curve comprises:

obtaining a first straight line tangent to the temperature coefficient simulation curve based on the first parameter and the temperature coefficient simulation curve;

and obtaining the first intercept based on the intersection point of the first straight line and the ordinate axis of the temperature coefficient simulation curve.

7. The temperature error detection method of claim 5, wherein the obtaining a second intercept based on the first parameter and the temperature coefficient simulation curve comprises:

acquiring a first threshold value and a second threshold value of the temperature coefficient simulation curve;

obtaining a second straight line intersecting the first threshold value of the temperature coefficient simulation curve based on the first parameter and the first threshold value of the temperature coefficient simulation curve;

obtaining a third intercept based on an intersection point of the second straight line and the ordinate axis of the temperature coefficient simulation curve;

obtaining a third straight line intersecting the second threshold value of the temperature coefficient simulation curve based on the first parameter and the second threshold value of the temperature coefficient simulation curve;

obtaining a fourth intercept based on an intersection point of the third straight line and the ordinate axis of the temperature coefficient simulation curve;

comparing the third intercept and the fourth intercept to obtain the second intercept.

8. The temperature error detection method according to claim 7, wherein the temperature coefficient simulation curve is a convex function,

the comparing the third intercept and the fourth intercept to obtain the second intercept comprises:

in response to the third intercept being less than the fourth intercept, the second intercept is the third intercept;

the second intercept is the fourth intercept in response to the fourth intercept being less than the third intercept.

9. The temperature error detection method according to claim 7, wherein the temperature coefficient simulation curve is a concave function,

in response to the third intercept being greater than the fourth intercept, the second intercept is the third intercept;

the second intercept is the fourth intercept in response to the fourth intercept being greater than the third intercept.

10. The temperature error detection method of claim 1, wherein the obtaining a first parameter and a second parameter from the temperature coefficient simulation curve comprises:

measuring to obtain a first temperature coefficient of the temperature sensing circuit;

obtaining the corrected second parameter based on the first parameter and the first temperature coefficient.

11. The temperature error detection method of claim 1, wherein the obtaining a first parameter and a second parameter from the temperature coefficient simulation curve comprises:

measuring and obtaining a first temperature coefficient of the temperature sensing circuit and a second temperature coefficient different from the first temperature coefficient;

obtaining the corrected first parameter and the corrected second parameter based on the first temperature coefficient and the second temperature coefficient.

12. The temperature error detection method according to claim 1, wherein the obtaining a temperature error based on the temperature coefficient simulation curve and the first-order standard curve includes:

reading a first temperature;

obtaining a simulated temperature coefficient based on the first temperature and the temperature coefficient simulation curve;

obtaining a first standard temperature coefficient based on the first temperature and the first order standard curve;

obtaining the temperature error based on the simulated temperature coefficient, the first standard temperature coefficient, and the first parameter.

13. The temperature error detection method of claim 1, wherein the obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters comprises:

obtaining a reference voltage and a positive temperature coefficient voltage based on the temperature sensing circuit model;

performing at least one first simulation by using the reference voltage and the positive temperature coefficient voltage to obtain at least one first temperature coefficient simulation curve;

and obtaining the temperature coefficient simulation curve based on the at least one first temperature coefficient simulation curve.

14. The temperature error detection method of claim 13, wherein the obtaining a reference voltage and a positive temperature coefficient voltage based on the temperature sensing circuit model comprises:

enabling the temperature sensing circuit model to generate positive temperature coefficient current and corresponding first positive temperature coefficient voltage;

causing the temperature sensing circuit model to generate the reference voltage based on the positive temperature coefficient current;

and enabling the temperature sensing circuit model to generate the positive temperature coefficient voltage which is scaled relative to the first positive temperature coefficient voltage based on the positive temperature coefficient current.

15. A temperature error detection device of a temperature sensor based on a band gap reference circuit comprises:

the acquisition module is configured to acquire temperature sensing circuit model parameters;

the simulation module is configured to obtain a temperature coefficient simulation curve based on the temperature sensing circuit model parameters;

a processing module configured to obtain a first parameter and a second parameter from the temperature coefficient simulation curve, and obtain a first order standard curve based on the first parameter and the second parameter, and obtain a temperature error based on the temperature coefficient simulation curve and the first order standard curve.

16. The temperature error detection device of claim 15, wherein the processing module is further configured to perform a first processing on the temperature coefficient simulation curve to obtain the first parameter and a second processing on the temperature coefficient simulation curve to obtain the second parameter.

17. The temperature error detection device of claim 15, further comprising a measurement module configured to measure a first temperature coefficient of the temperature sensing circuit and to measure a second temperature coefficient of the temperature sensing circuit different from the first temperature coefficient, wherein the processing module is further configured to obtain the modified second parameter based on the first parameter and the first temperature coefficient or obtain the modified first parameter and the modified second parameter based on the first temperature coefficient and the second temperature coefficient.

18. A temperature error detecting apparatus of a temperature sensor based on a bandgap reference circuit, comprising:

a processor;

a memory including one or more computer program modules;

wherein the one or more computer program modules are stored in the memory and configured to be executed by the processor, the one or more computer program modules comprising instructions for implementing the method of any of claims 1-14.

19. A storage medium storing non-transitory computer readable instructions which, when executed by a computer, implement the method of any of claims 1-14.