CN114864831A - Photoelectric film, microfluid chip and preparation method of photoelectric film - Google Patents
Photoelectric film, microfluid chip and preparation method of photoelectric film Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000011787 zinc oxide Substances 0.000 claims abstract description 55
- 238000004528 spin coating Methods 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 48
- 239000012296 anti-solvent Substances 0.000 claims description 35
- 239000004809 Teflon Substances 0.000 claims description 24
- 229920006362 Teflon® Polymers 0.000 claims description 24
- 230000005693 optoelectronics Effects 0.000 claims description 20
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 11
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 210000000438 stratum basale Anatomy 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000003595 spectral effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 33
- 239000010409 thin film Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004720 dielectrophoresis Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- -1 amine methyl iodide Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012576 optical tweezer Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81B2201/05—Microfluidics
- B81B2201/051—Micromixers, microreactors
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Abstract
The embodiment of the application provides a preparation method of photoelectric film, microfluid chip and photoelectric film, photoelectric film includes electrically conductive stratum basale, perovskite layer and zinc oxide layer, the perovskite layer the zinc oxide layer stack gradually set up in the surface on electrically conductive stratum basale, the thickness scope on perovskite layer is 1000nm-2000nm, the thickness scope on zinc oxide layer is 20nm-100 nm. The photoelectric film obtained by the embodiment of the application has higher photoelectric conversion efficiency, response speed, and brightness ratio and spectral response range of conductivity.
Description
Technical Field
The application belongs to the technical field of photoelectric thin film materials, and particularly relates to a photoelectric thin film, a microfluid chip and a preparation method of the photoelectric thin film.
Background
The photoelectric tweezers are a novel manipulation technology combining the optical tweezers and dielectrophoresis, based on the principle of dielectrophoresis manipulation, the traditional metal evaporation electrodes are replaced by the optical electrodes, the projection equipment is used for projecting optical patterns on the photoconductive film layer to form dynamic optical virtual electrodes, the non-uniform electric field is further induced to realize the manipulation of micro-nano objects, and a large number of micro objects, such as micro-particles of cells, viruses, macromolecules and the like, can be flexibly manipulated through the variable optical patterns. The cost is reduced by the optical control system of the photoelectric tweezers, the original limitation is broken through, and the application range is widened. One of the core technologies of the photoelectric tweezers technology is the preparation of a photoconductive thin film. The photoconductive materials widely used at present are hydrogenated amorphous silicon materials, phthalocyanine compounds and the like.
However, the photoelectric response efficiency of the currently prepared photoelectric layer is slow, the light-dark ratio of the conductivity is low, and the sensitivity of the product level cannot be achieved. Meanwhile, the photoelectric material layer has a complex processing process flow, and cannot achieve lower production cost and more universal process conditions.
Disclosure of Invention
An object of the embodiments of the present application is to provide a new technical solution for a method for preparing an optoelectronic film, a microfluidic chip and an optoelectronic film.
According to a first aspect of embodiments of the present application, there is provided an optoelectronic film, including:
the conductive coating comprises a conductive base layer, a perovskite layer and a zinc oxide layer, wherein the perovskite layer and the zinc oxide layer are sequentially stacked on the surface of the conductive base layer;
the thickness range of the perovskite layer is 1000nm-2000nm, and the thickness range of the zinc oxide layer is 20nm-100 nm.
Optionally, the perovskite layer has a thickness in the range of 1500nm to 1600nm and the zinc oxide layer has a thickness in the range of 50nm to 60 m.
Optionally, the coating further comprises a teflon layer, and the teflon layer is arranged on one side, far away from the perovskite layer, of the zinc oxide layer.
Optionally, the perovskite layer is disposed on the conductive substrate layer by an anti-solvent spin coating process;
the anti-solvent in the anti-solvent spin coating process comprises at least one of diethyl ether, dichloromethane and acetone.
Optionally, in the spin-coating parameters of the antisolvent spin-coating process, the spin-coating rotation speed range is 3000rpm-5000rpm, and the spin-coating time range is 10s-30 s.
Optionally, the spin-coating liquid of the anti-solvent spin-coating process comprises lead iodide, methyl amine iodide, a normal solvent and the anti-solvent;
the positive solvent includes at least one of N, N-dimethylformamide and dimethylsulfoxide.
Optionally, the anti-solvent is added to the spin-on liquid during spin-coating.
Optionally, after the perovskite layer is disposed on the conductive substrate layer by an anti-solvent spin coating process, the annealing process is further performed on the perovskite layer.
Optionally, the zinc oxide layer is disposed on the perovskite layer by a magnetron sputtering process;
in the sputtering parameters of the magnetron sputtering process, the sputtering gas is argon, the flow range of the argon is 10sccm-30sccm, and the temperature range of the substrate is 20-30 ℃; the sputtering power range is 100W-150W, and the sputtering time range is 20min-60 min.
Optionally, the teflon layer is disposed on the zinc oxide layer by a spin coating process.
According to a second aspect of embodiments of the present application, there is provided a microfluidic chip for an optoelectronic tweezers device, comprising an optoelectronic film as described in the first aspect.
According to a third aspect of embodiments of the present application, there is provided a method for preparing an optoelectronic thin film, including:
arranging a perovskite layer on the conductive substrate layer through an anti-solvent spin coating process;
performing magnetron sputtering on the perovskite layer to form a zinc oxide layer;
and coating a Teflon layer on the zinc oxide layer.
One technical effect of the application lies in:
the embodiment of the application provides a photoelectric film, photoelectric film includes electrically conductive stratum basale, perovskite layer and zinc oxide layer, the perovskite layer the zinc oxide layer with teflon layer stacks gradually set up in the surface on electrically conductive stratum basale, the thickness scope on perovskite layer is 1000nm-2000nm, the thickness scope on zinc oxide layer is 20nm-100 nm. The zinc oxide layer and the perovskite layer are combined to form the composite photoelectric film, so that the photoelectric response efficiency and the brightness-dark ratio of the conductivity of the photoelectric film are improved, and the stability and the sensitivity of the photoelectric film are ensured.
Further features of the present application and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the application and together with the description, serve to explain the principles of the application.
Fig. 1 is a schematic view of an optoelectronic film provided in an embodiment of the present application;
fig. 2 is a flowchart of a method for manufacturing a photovoltaic thin film according to an embodiment of the present disclosure.
Wherein: 1. a conductive base layer; 2. a perovskite layer; 3. a zinc oxide layer; 4. a Teflon layer.
Detailed Description
Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Referring to fig. 1, embodiments of the present application provide an optoelectronic film that can be used for preparation of a microfluidic chip in an optoelectronic tweezers device, the optoelectronic film comprising:
the conductive substrate layer 1, the perovskite layer 2 and the zinc oxide layer 3 are sequentially arranged on the surface of the conductive substrate layer 1 in a stacking mode, namely, the perovskite layer 2 is arranged between the conductive substrate layer 1 and the zinc oxide layer 3, and the perovskite layer 2 and the zinc oxide layer 3 are tightly attached.
The thickness range of the perovskite layer 2 is 1000nm to 2000 nm. The perovskite material has not only excellent light absorption characteristics but also bipolar carrier transport characteristics. In an inorganic lead halide perovskite CsPbX 3 In the (X ═ Cl, Br or I) system, Pm3m cubic phase CsPbI 3 Having an appropriate band gap (1.73eV), it is very suitable for use as a light absorbing layer. The absorption cutoff wavelength of the perovskite layer 2 material is about 700nm, the visible light wave band is basically covered, and the corresponding theoretical photoelectric conversion efficiency can reach 28%. The perovskite layer 2 has good weak light performance and low temperature coefficient, the thickness range of the perovskite layer 2 is preferably 1500nm-1600nm, and a photoelectric film with high photoelectric response efficiency and high brightness-to-dark ratio of electric conductivity can be formed under a thinner size.
However, the perovskite layered material has poor stability in air, and the perovskite layered material is gradually decomposed in a high-humidity environment without encapsulation. The specific formula is as follows:
the thickness range of the zinc oxide layer 3 is 20nm-100 nm. The perovskite layer 2 and the zinc oxide layer 3 are sequentially arranged on the surface of the conductive substrate layer 1 in a stacked mode, namely the zinc oxide layer 3 is arranged on the outer side of the perovskite layer 2, and the zinc oxide layer 3 can achieve effective protection on the photoelectric thin film under the condition of being thin in thickness by means of structural stability of the zinc oxide layer 3. The thickness range of the zinc oxide layer 3 is preferably 50nm-60nm, and the zinc oxide layer 3 and the perovskite layer 2 are combined to form a composite photoelectric thin film, so that the photoelectric thin film has an interface effect of a composite film, the spectral response range of the photoelectric thin film is widened, the photoelectric response efficiency and the brightness-dark ratio of the electric conductivity of the photoelectric thin film are improved, namely, the absorption efficiency and the photoelectric conversion efficiency of light energy on the photoelectric thin film are improved, and the stability and the sensitivity of the photoelectric thin film are ensured.
In addition, the conductive substrate layer 1 may include a glass substrate and an indium tin oxide base layer disposed on one side surface of the glass substrate, and the perovskite layer 2 is disposed on a side of the indium tin oxide base layer away from the glass substrate. The conductive substrate layer 1 may be a substrate layer with a surface of a glass substrate coated with Indium Tin Oxide (ITO), and when the perovskite layer 2 is located on a side of the indium tin oxide substrate layer away from the glass substrate, that is, the indium tin oxide substrate layer is located between the perovskite layer 2 and the glass substrate.
Before the perovskite layer 2 is disposed, the conductive substrate layer 1 may be respectively cleaned with absolute ethanol and deionized water in an ultrasonic cleaning instrument for 15 min. And (2) placing the cleaned conductive substrate layer 1 into a plasma instrument, and carrying out ion bombardment treatment on the surface of the conductive substrate layer 1, wherein the treatment power is 90W, and the treatment time is 25s, so as to ensure the adhesion strength of the perovskite layer 2 on the conductive substrate layer 1.
The photoelectric film provided by the embodiment of the application comprises a conductive substrate layer 1, a perovskite layer 2 and oxygenAnd the zinc oxide layer 3, the perovskite layer 2 and the zinc oxide layer 3 are sequentially arranged on the surface of the conductive substrate layer 1 in a laminated manner, the thickness range of the perovskite layer 2 is 1000nm-2000nm, and the thickness range of the zinc oxide layer 3 is 20nm-100 nm. The zinc oxide layer 3 and the perovskite layer 2 are combined to form the composite photoelectric film, so that the photoelectric response efficiency and the brightness-dark ratio of the conductivity of the photoelectric film are improved, and the stability and the sensitivity of the photoelectric film are ensured. For example, the conductivity of the photoelectric film can reach a light-dark ratio (light-dark conductivity ratio) of 10 3 At the device level.
Optionally, referring to fig. 1, the photovoltaic film further includes a teflon layer 4, and the teflon layer 4 is disposed on a side of the zinc oxide layer 3 away from the perovskite layer 2.
Specifically, the contact angle between the teflon and the water is 118 degrees, and the teflon layer 4 can effectively isolate the erosion of water vapor to the photoelectric film. And after the packaging, the stability of the photoelectric film can be further improved. And the teflon layer 4 is coated on the surface of the zinc oxide layer 3 in a spin mode, so that particles can be prevented from being adhered to the surface of the photoelectric film in photoelectric operation on the basis of water resistance.
Optionally, the perovskite layer 2 is disposed on the conductive substrate layer 1 by an anti-solvent spin coating process;
the anti-solvent in the anti-solvent spin coating process comprises at least one of diethyl ether, dichloromethane and acetone.
Specifically, when the perovskite layer 2 is disposed on the conductive base layer 1 by an anti-solvent spin coating process, the substrate including the conductive base layer 1 with a processed surface may be placed on a spin coating machine, the perovskite solution is dropped onto the substrate, and the perovskite is spin-coated on the conductive base layer 1 by an anti-solvent spin coating method to obtain the perovskite layer 2. The perovskite layer 2 having a relatively large density and a relatively uniform thickness can be obtained by a spin coating process.
Optionally, in the spin coating parameters of the antisolvent spin coating process, the spin coating speed ranges from 3000rpm to 5000rpm, preferably from 4000rpm to 4200rpm, and the spin coating time ranges from 10s to 30s, preferably from 20s to 25 s.
Specifically, the perovskite layer 2 having a relatively large density and a relatively uniform thickness can be obtained by using the spin coating parameters. After the perovskite layer 2 is arranged on the conductive substrate layer 1 through an anti-solvent spin coating process, annealing and curing can be performed on the perovskite layer 2 by using drying equipment such as a thermal oven, and the curing condition can be that the perovskite layer is cured at the temperature of 60 ℃ for 1min and then cured at the temperature of 100 ℃ for 5min, so that the dimensional stability of the perovskite layer 2 is ensured.
Optionally, the spin-coating liquid of the anti-solvent spin-coating process comprises lead iodide, methyl amine iodide, a normal solvent and the anti-solvent;
the positive solvent includes at least one of N, N-dimethylformamide and dimethylsulfoxide.
Specifically, the lead iodide and the methyl amine iodide in the spin-on liquid can be used as main components for forming the perovskite layer 2, and the dimethyl formamide and the dimethyl sulfoxide can enable the lead iodide and the methyl amine iodide in the spin-on liquid to be uniformly mixed, so that the uniformity of the perovskite layer 2 is ensured.
Optionally, the anti-solvent is added dropwise to the spin-on liquid during spin-coating.
Specifically, after the lead iodide and the amine methyl iodide in the spin-coating solution are uniformly mixed, the anti-solvent may be added during the spin-coating process to facilitate the adhesion of the perovskite layer 2 on the conductive substrate layer 1, and the anti-solvent may reduce the solubility of the main component forming the perovskite layer 2 in the spin-coating solution, and further precipitate and deposit on the conductive substrate layer 1, thereby improving the adhesion strength between the perovskite layer 2 and the conductive substrate layer 1.
In one specific implementation, the spin-coating solution of the antisolvent spin-coating process comprises 461mgPbI 2 、159mgCH 3 NH 3 I. 662 mu.L of DMF and 78 mu.L of DMSO, in particular 61mg of PbI 2 And 159mgCH 3 NH 3 I was added to 662. mu.L DMF (N, N-dimethylformamide) and 78. mu.L DMSO (dimethyl sulfoxide) and stirred at 25 ℃ for 1 hour at room temperature to give a clear perovskiteAnd (3) solution.
In the anti-solvent spin coating process, the conductive substrate layer 1 is placed on an object stage of a spin coating instrument, and 50 mu L of perovskite solution is dripped on the conductive substrate layer 1. Spin coating was started by setting the spin coater rotation speed to 4000rpm for 20 seconds. At the 8 th second after the start of the spin coating step, 250. mu.L of diethyl ether was sucked up with a pipette and dropped on the conductive substrate layer 1. And after the spin coating is finished, placing the obtained film on a hot table, annealing and curing at 60 ℃ for 1min, and then annealing and curing at 100 ℃ for 5min to obtain a film precursor of the perovskite layer 2 attached to the conductive substrate layer 1.
Optionally, the zinc oxide layer 3 is disposed on the perovskite layer 2 by a magnetron sputtering process;
in the sputtering parameters of the magnetron sputtering process, the sputtering gas is argon, the flow range of the argon is 10sccm-30sccm, and the temperature range of the substrate is 20-30 ℃; the sputtering power range is 100W-150W, and the sputtering time range is 20min-60 min.
Specifically, when the zinc oxide layer 3 is provided on the perovskite layer 2 by a magnetron sputtering process, the zinc oxide layer 3 can be efficiently provided on the perovskite layer 2 in a short time, and the adhesion of the zinc oxide layer 3 on the perovskite layer 2 can be ensured. In addition, the photoelectric film provided by the embodiment of the application is combined with a sputtering control process through a spin coating process, so that the cost and time of the process are effectively reduced.
In one specific implementation, when the zinc oxide layer 3 is disposed on the perovskite layer 2 by a magnetron sputtering process, a magnetron sputtering apparatus uses zinc oxide (purity 99.99%) as a target, argon gas with purity 99.99% is used as a sputtering gas, and background vacuum is 6.010 -4 Pa, argon flow of 20sccm and substrate temperature of 24 ℃; the sputtering power is 120W, and the sputtering time is 30 min.
Optionally, the teflon layer 4 is disposed on the zinc oxide layer 3 by a spin coating process.
Specifically, when the teflon layer 4 is disposed on the zinc oxide layer 3 by a spin coating process, the substrate with the surface treated and including the zinc oxide layer 3 may be specifically placed on a spin coater, the teflon solution is dropped onto the substrate, and the teflon layer 4 is obtained after the teflon solution is spin-coated on the zinc oxide layer 3 by a spin coating method. The teflon layer 4 with higher density and more uniform thickness can be obtained by adopting a spin coating process. In addition, the spin-coating rotation speed range in the spin-coating process of the Teflon layer 4 is 4000rpm-5000rpm, and the spin-coating time range is 40s-60 s.
The embodiment of the application also provides a microfluidic chip for the photoelectric tweezers device, and the microfluidic chip comprises the photoelectric film.
Particularly, the microfluidic chip can be used in an optoelectronic tweezers device, and the microfluidic chip manufactured by the optoelectronic film has excellent optoelectronic performance and can obtain a larger difference of optical dark conductance under a smaller light intensity, so that the optoelectronic tweezers obtain a larger control force.
Referring to fig. 2, an embodiment of the present application further provides a preparation method of the photovoltaic thin film, where the preparation method includes:
s101, arranging a perovskite layer on the conductive substrate layer through an anti-solvent spin coating process;
s102, performing magnetron sputtering on a zinc oxide layer on the perovskite layer;
and S103, coating a Teflon layer on the zinc oxide layer.
Wherein, the technological parameters of the antisolvent spin coating and the magnetron sputtering adopt the process of the photoelectric film.
According to the preparation method of the photoelectric thin film, the binding force of the perovskite layer and the conductive substrate layer is improved through ultrasonic cleaning and plasma treatment of the conductive substrate layer of the ITO substrate, the perovskite layer with high density and uniform thickness can be obtained through an anti-solvent spin coating process, the zinc oxide layer and the Teflon layer can effectively achieve structural protection and waterproof protection of the perovskite layer, and the stability of the photoelectric thin film is improved. The microfluid chip manufactured by the photoelectric film can obtain larger difference of light dark conductance under smaller light intensity, so that the photoelectric tweezers obtain larger control force.
Although some specific embodiments of the present application have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present application. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the present application. The scope of the application is defined by the appended claims.
Claims (12)
1. An optoelectronic film for use in an optoelectronic tweezers device, comprising:
the conductive coating comprises a conductive base layer (1), a perovskite layer (2) and a zinc oxide layer (3), wherein the perovskite layer (2) and the zinc oxide layer (3) are sequentially stacked on the surface of the conductive base layer (1);
the thickness range of the perovskite layer (2) is 1000nm-2000nm, and the thickness range of the zinc oxide layer (3) is 20nm-100 nm.
2. Photovoltaic film according to claim 1, characterized in that the thickness of the perovskite layer (2) ranges from 1500nm to 1600nm and the thickness of the zinc oxide layer (3) ranges from 50nm to 60 m.
3. The photovoltaic film according to claim 1, further comprising a teflon layer (4), wherein the teflon layer (4) is disposed on a side of the zinc oxide layer (3) away from the perovskite layer (2).
4. The optoelectronic film of claim 1, wherein the perovskite layer (2) is disposed on the conductive substrate layer (1) by an anti-solvent spin coating process;
the anti-solvent in the anti-solvent spin coating process comprises at least one of diethyl ether, dichloromethane and acetone.
5. The photovoltaic film of claim 4, wherein the spin-coating parameters of the antisolvent spin-coating process include a spin-coating speed ranging from 3000rpm to 5000rpm and a spin-coating time ranging from 10s to 30 s.
6. The photovoltaic film according to claim 4, wherein the spin coating liquid of the antisolvent spin coating process comprises lead iodide, methyl amine iodide, a normal solvent and the antisolvent;
the positive solvent includes at least one of N, N-dimethylformamide and dimethylsulfoxide.
7. The photovoltaic film of claim 6, wherein the anti-solvent is added to the spin-on solution during spin-coating.
8. The photovoltaic film according to claim 4, wherein the perovskite layer (2) is disposed on the conductive substrate layer (1) by an anti-solvent spin coating process, and the annealing of the perovskite layer (2) is further included.
9. Photovoltaic film according to claim 1, characterized in that said zinc oxide layer (3) is provided on said perovskite layer (2) by means of a magnetron sputtering process;
in the sputtering parameters of the magnetron sputtering process, the sputtering gas is argon, the flow range of the argon is 10sccm-30sccm, and the temperature range of the substrate is 20-30 ℃; the sputtering power range is 100W-150W, and the sputtering time range is 20min-60 min.
10. The photovoltaic film of claim 3, wherein the Teflon layer (4) is disposed on the zinc oxide layer (3) by a spin coating process.
11. A microfluidic chip for an optoelectronic tweezers device, comprising an optoelectronic film according to any of claims 1 to 10.
12. A method of making an optoelectronic film according to any one of claims 1 to 10, comprising:
arranging a perovskite layer on the conductive substrate layer through an anti-solvent spin coating process;
performing magnetron sputtering on the perovskite layer to form a zinc oxide layer;
and coating a Teflon layer on the zinc oxide layer.
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