CN114864796A - Ultraviolet device packaging structure and manufacturing method - Google Patents

Abstract

The invention discloses an ultraviolet device packaging structure, comprising a chip, a lens and a substrate. The chip is arranged in a concentrating accommodating hole of the lens, the chip can be connected to external elements by using a first conducting element, and the substrate is blocked and accommodated. The chip is packaged in the package cavity, and the package cavity is filled with protective gas. The protective gas can be selected from inert gas such as nitrogen to prevent the chip from being affected by the atmosphere, thereby increasing the radiant energy of the deep ultraviolet light emitting diode and enhancing the efficiency of the deep ultraviolet light emitting diode. Sterilization and disinfection effect. At the same time, the present invention also provides a method for manufacturing the above-mentioned ultraviolet device packaging structure, which uses an eutectic furnace to introduce a protective gas between the substrate and the lens, and enables the first conducting element and the lens to achieve eutectic welding, and the chip and the lens are eutectic. The protective gas is encapsulated in the encapsulation cavity, thereby effectively avoiding the influence of the atmosphere on the chip and improving the performance of the deep ultraviolet light emitting diode.

Description

A kind of UV device packaging structure and manufacturing method

technical field

The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure and a manufacturing method of an ultraviolet device.

Background technique

Deep ultraviolet light emitting diode (UVC LED) is a high power deep ultraviolet light emitting diode with a wavelength between 220nm and 350nm. The deep ultraviolet light emitting diode has high reliability, long life, fast response, low power consumption, environmental protection, no pollution, small size, etc. Advantages, it is widely used in the fields of sterilization, water purification, medical treatment, high-density optical recording, high color rendering LED lighting and high-speed decomposition and treatment of pollution substances.

It is worth noting that due to the material and structure of the deep ultraviolet light emitting diode chip, the current TE output of the deep ultraviolet light emitting diode chip is weaker than the side TM light radiant energy. After the deep ultraviolet light emitting diode LED chip is packaged, it is widely used in water sterilization and disinfection. , air sterilization, surface sterilization and other fields. In the prior art, the package of the deep ultraviolet light emitting diode chip is affected by the atmosphere, resulting in performance degradation, and cannot output higher deep ultraviolet radiation energy, thereby reducing the sterilization and disinfection effect.

Therefore, how to change the current situation in the prior art that the performance of the deep ultraviolet light emitting diode chip is degraded due to the influence of the atmosphere, and the difficulty in packaging and extracting the TM light-emitting radiation energy from the side of the chip has become an urgent problem to be solved by those skilled in the art.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide an ultraviolet device packaging structure and a manufacturing method, so as to solve the above-mentioned problems in the prior art, avoid the chip being affected by the atmosphere, and improve the radiation energy of the deep ultraviolet light emitting diode.

In order to achieve the above purpose, the present invention provides the following solutions: the present invention provides a UV device packaging structure, comprising:

chip;

a lens, the lens has an accommodating hole, and the chip is arranged in the accommodating hole;

A substrate, on which a first conduction element is arranged, the first conduction element is connected to the chip, the chip can be connected to an external element by the first conduction element, and the substrate uses all the The first conducting element is sealedly connected to the lens, the substrate blocks the accommodating hole to form a sealed package cavity, and the package cavity is filled with protective gas.

Preferably, the first conducting element has a split structure, the first conducting element includes a conducting plate and a connecting plate, the number of the conducting plates is two, and the two conducting plates are respectively connected to The chips are connected, and there is a gap between the two conducting plates, the conducting plates are made of conductive material, and the connecting plates are connected to the substrate and the lens.

Preferably, the connecting plate is an annular structure, and the lens has a boss adapted to the connecting plate, the boss extending into the hollow part of the connecting plate and abutting against the base plate.

Preferably, the lens has a connection structure layer, the connection structure layer is annular, the connection structure layer is arranged around the boss, and the connection structure layer is connected to the connection plate by welding.

Preferably, the substrate is further connected with a second conducting element, the substrate is located between the first conducting element and the second conducting element, and the second conducting element is made of a conductive material, The number of the second conducting elements is two groups, the second conducting elements are connected with the conducting plates and correspond one-to-one, and there is a gap between the two groups of the second conducting elements.

Preferably, the second conducting element is connected to the conducting plate by connecting posts, the substrate has through holes, and the connecting posts pass through the through holes to connect the conducting plate and the second conducting plate pass element.

Preferably, the second conduction element is connected with pads, the number of the pads is two groups, the pads are in one-to-one correspondence with the second conduction element, and there are two groups of the pads between the two groups. gap.

Preferably, one end of the lens away from the substrate is a spherical structure, the accommodating hole is a truncated truncated structure, the bottom surface of the accommodating hole is an incident surface, and the opening diameter of the accommodating hole is larger than that of the incident surface The diameter of the accommodating hole is small, and the tapered side wall of the accommodating hole is a light-gathering surface.

Preferably, the light-collecting surface is provided with a high-reflection film coating for ultraviolet light.

The present invention also provides a method for fabricating the above-mentioned UV device packaging structure. The substrate is put into the eutectic furnace, the eutectic furnace is evacuated, and then the protective gas is filled into the eutectic furnace, and the protective gas enters the accommodating hole to control the eutectic the temperature of the furnace, the lens and the substrate are eutectic welded through the first conducting element, the substrate and the lens are connected to block the accommodating hole and form the packaging cavity, so The chip and the protective gas are encapsulated in the encapsulation cavity.

Compared with the prior art, the present invention achieves the following technical effects: the UV device packaging structure of the present invention includes a chip, a lens and a substrate, the lens has an accommodating hole, and the chip is arranged in the accommodating hole; the substrate is provided with a first conducting element , the first conducting element is connected to the chip, the chip can be conducted with external elements by the first conducting element, and the substrate is sealed and connected to the lens by the first conducting element, and the substrate seals the accommodating hole to form a sealed package cavity, The encapsulation cavity is filled with protective gas.

In the UV device packaging structure of the present invention, the chip is arranged in the accommodating hole of the lens, and the radiant energy light emitted from the side TM of the chip of the deep ultraviolet light emitting diode is reflected to the accommodating hole through the condensing surface of the sidewall of the inner cone of the accommodating hole. The incident surface of the bottom surface further irradiates the deep ultraviolet light through the spherical structure of the lens, thereby improving the utilization rate of the light emitting radiation energy of the TM on the side of the deep ultraviolet light emitting diode chip. Specifically, the chip is arranged in the accommodating hole of the lens, and the chip can conduct conduction with the external elements by using the first conducting element, the substrate blocks the accommodating hole, and the chip is packaged in the package cavity, and the package cavity is filled with protective gas , The protective gas can choose inert gas such as nitrogen to avoid the chip from being affected by the atmosphere, thereby increasing the radiant energy of the deep ultraviolet light emitting diode and enhancing the sterilization and disinfection effect of the deep ultraviolet light emitting diode.

At the same time, the present invention also provides a method for manufacturing the above-mentioned ultraviolet device packaging structure, which comprises placing the chip into the accommodating hole, abutting the lens and the substrate, placing the chip, the lens and the substrate into a eutectic furnace, and aligning the eutectic The furnace is evacuated, and then the protective gas is filled into the eutectic furnace, the protective gas enters the accommodating hole, the temperature of the eutectic furnace is controlled, the lens and the substrate are eutectic welding through the first conducting element, and the substrate and the lens are connected. The accommodating hole is then blocked to form a package cavity, and the chip and the protective gas are packaged in the package cavity. The invention utilizes the eutectic furnace to enter the protective gas between the substrate and the lens, enables the first conducting element and the lens to realize eutectic welding, and encapsulates the chip and the protective gas in the packaging cavity, thereby effectively avoiding the influence of the atmosphere on the chip. Improve the performance of deep ultraviolet light-emitting diodes.

Description of drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings required in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some of the present invention. In the embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

Fig. 1 is the structural representation of the ultraviolet device packaging structure of the present invention;

2 is a schematic structural diagram of the UV device packaging structure of the present invention from other angles;

Fig. 3 is the cutaway structure schematic diagram of the ultraviolet device packaging structure of the present invention;

4 is a schematic structural diagram of a lens of the UV device packaging structure of the present invention;

5 is a schematic structural diagram of the lens of the ultraviolet device packaging structure of the present invention from other angles;

6 is a schematic diagram of a cutaway structure of a lens of the UV device packaging structure of the present invention;

FIG. 7 is a schematic view of the disassembled structure of the UV device packaging structure of the present invention.

Among them, 100 is the packaging structure of the ultraviolet device;

1 is the chip, 2 is the lens, 201 is the accommodating hole, 202 is the boss, 203 is the connection structure layer, 204 is the incident surface, 205 is the condensing surface, 3 is the substrate, 301 is the through hole, and 4 is the first guide 401 is a conducting plate, 402 is a connecting plate, 5 is a package cavity, 6 is a second conducting element, 7 is a connecting post, and 8 is a pad.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

The purpose of the present invention is to provide an ultraviolet device packaging structure and a manufacturing method, so as to solve the above-mentioned problems in the prior art, avoid the chip being affected by the atmosphere, and improve the radiation energy of the deep ultraviolet light emitting diode.

In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

Please refer to FIG. 1 to FIG. 7, wherein, FIG. 1 is a schematic structural diagram of the UV device packaging structure of the present invention, FIG. 2 is a structural schematic diagram of the UV device packaging structure of the present invention from other angles, and FIG. 3 is the UV device packaging structure of the present invention. Figure 4 is a schematic structural diagram of the lens of the UV device packaging structure of the present invention, Figure 5 is a schematic structural diagram of the lens of the UV device packaging structure of the present invention from other angles, and Figure 6 is the UV device of the present invention. Fig. 7 is a schematic diagram of the disassembled structure of the package structure of the ultraviolet device of the present invention.

The present invention provides an ultraviolet device packaging structure 100, including a chip 1, a lens 2 and a substrate 3. The lens 2 has an accommodating hole 201, and the chip 1 is arranged in the accommodating hole 201; the substrate 3 is provided with a first conducting element 4, The first conduction element 4 is connected to the chip 1, and the chip 1 can conduct conduction with the external elements by using the first conduction element 4 (it needs to be explained here that "conduction" means the realization of electrical connection, which belongs to those skilled in the art. Common knowledge), and the substrate 3 is sealed and connected to the lens 2 by using the first conductive element 4, the substrate 3 blocks the accommodating hole 201 to form a sealed package cavity 5, and the package cavity 5 is filled with protective gas.

In the UV device packaging structure 100 of the present invention, the chip 1 is disposed in the accommodating hole 201 of the lens 2 , the chip 1 can be connected to external elements by the first conducting element 4 , the substrate 3 blocks the accommodating hole 201 , and the chip 1 is The package is packaged in the package cavity 5, and the package cavity 5 is filled with a protective gas. The protective gas can be selected from an inert gas such as nitrogen, so as to prevent the chip 1 from being affected by the atmosphere, thereby increasing the radiation energy of the deep ultraviolet light emitting diode and enhancing the improvement of the deep ultraviolet light emitting diode. sterilization and disinfection effect.

Specifically, the first conduction element 4 is a split structure, the first conduction element 4 includes a conduction plate 401 and a connection plate 402 , the number of the conduction plates 401 is two, and the two conduction plates 401 are respectively connected to the chip 1 . The positive and negative electrodes are connected, and there is a gap between the two conducting plates 401 to avoid short circuits. The substrate 3 is made of ceramic material, the conducting plate 401 is made of conductive material, and the connecting plate 402 connects the substrate 3 and the lens 2, so that The substrate 3 can block the accommodating hole 201 to ensure the sealing of the package cavity 5 .

In this specific embodiment, the connecting plate 402 is a ring-shaped structure, and the lens 2 has a boss 202 adapted to the connecting plate 402. The boss 202 extends into the hollow part of the connecting plate 402 and abuts against the base plate 3, which is convenient for installation and positioning , the conducting plate 401 is a semi-circular plate-like structure, which can extend into the accommodating hole 201 to improve the connection convenience between the conducting plate 401 and the chip 1 .

It should also be noted that the lens 2 has a connection structure layer 203, the connection structure layer 203 is annular, the connection structure layer 203 is arranged around the boss 202, and the connection structure layer 203 is connected to the connection plate 402 by welding. The connection structure layer 203 is made of gold-tin alloy, and the connection board 402 is made of copper material. In practical applications, the connection board 402 and the connection structure layer 203 can be made by plating.

More specifically, the substrate 3 is also connected with a second conducting element 6, the substrate 3 is located between the first conducting element 4 and the second conducting element 6, the second conducting element 6 is made of a conductive material, and the second conducting element 6 is The number of the pass elements 6 is two groups, the second pass elements 6 are connected with the pass plate 401 and correspond one-to-one, there is a gap between the two groups of the second pass elements 6, and the second pass elements 6 are arranged to facilitate the use of the chip 1 The conducting plate 401 is connected to the external elements, and the second conducting element 6 can be made of copper material.

The second conducting element 6 is connected to the conducting plate 401 by the connecting column 7 , the substrate 3 has a through hole 301 , and the connecting column 7 passes through the through hole 301 to connect the conducting plate 401 and the second conducting element 6 , and the connecting column 7 It is also made of copper material, and the conduction plate 401 and the second conduction element 6 are connected to each other by using the connecting column 7 . In practical applications, the connection column 7 may be formed by electroplating copper filling at the through hole 301 .

It should also be noted that the second conducting element 6 is connected with pads 8, the number of pads 8 is two groups, the pads 8 correspond to the second conducting element 6 one-to-one, and there is a gap between the two groups of pads 8 , the setting of the pads 8 facilitates the use and fixation of the package structure and improves the adaptability of the package structure.

Further, the end of the lens 2 away from the substrate 3 is a spherical structure, the accommodating hole 201 is a truncated truncated structure, the bottom surface of the accommodating hole 201 is the incident surface 204, and the opening diameter of the accommodating hole 201 is smaller than the diameter of the incident surface 204, The sidewall of the conical surface of the hole 201 is the condensing surface 205, the ultraviolet light emitted by the chip 1 directly illuminates the incident surface 204, and the ultraviolet light emitted from the side of the chip 1 is reflected to the incident surface 204 through the condensing surface 205, thereby improving the ultraviolet light of the chip 1. utilization rate.

At the same time, the light-converging surface 205 is provided with a high-reflection film coating of ultraviolet light, and the high-reflection film coating of ultraviolet light can make the light-converging surface 205 form a high-reflection light-converging surface 205, thereby further improving the utilization rate of ultraviolet light.

The present invention also provides a method for manufacturing the above-mentioned UV device packaging structure 100 . The chip 1 is put into the accommodating hole 201 , the lens 2 is abutted against the substrate 3 , and the chip 1 , the lens 2 and the substrate 3 are placed in the eutectic furnace. In the eutectic furnace, the eutectic furnace is evacuated, and then the protective gas is filled into the eutectic furnace, and the protective gas enters the accommodating hole 201 to control the temperature of the eutectic furnace. The lens 2 and the substrate 3 are eutectic welded. After the substrate 3 and the lens 2 are connected, the accommodating hole 201 is blocked to form a package cavity 5 . The chip 1 and the protective gas are packaged in the package cavity 5 .

By filling the encapsulation cavity 5 with nitrogen as a protective gas, the present invention protects the performance of the chip 1 from being affected by the atmosphere while the chip 1 emits ultraviolet light, thereby improving the stability of the deep-ultraviolet light-emitting diode chip 1 and enhancing the Sterilization and disinfection effect of light-emitting diodes.

In the present invention, specific examples are used to illustrate the principles and implementations of the present invention, and the descriptions of the above embodiments are only used to help understand the method and the core idea of the present invention; There will be changes in the specific implementation manner and application scope of the idea of the invention. In conclusion, the contents of this specification should not be construed as limiting the present invention.

Claims (10)

1. an ultraviolet device packaging structure, is characterized in that, comprises: chip; a lens, the lens has an accommodating hole, and the chip is arranged in the accommodating hole; A substrate, on which a first conduction element is arranged, the first conduction element is connected to the chip, the chip can be connected to an external element by the first conduction element, and the substrate uses all the The first conducting element is sealedly connected to the lens, the substrate blocks the accommodating hole to form a sealed package cavity, and the package cavity is filled with protective gas. 2 . The UV device packaging structure according to claim 1 , wherein the first conducting element is a split structure, the first conducting element comprises a conducting plate and a connecting plate, and the conducting plate There are two pieces of the conducting plate, the two conducting plates are respectively connected with the chip, and there is a gap between the two conducting plates, the conducting plates are made of conductive material, and the connecting plates are connected to the chip. the substrate and the lens. 3. The UV device packaging structure according to claim 2, wherein the connecting plate is a ring-shaped structure, the lens has a boss adapted to the connecting plate, and the boss extends into the The hollow part of the connecting plate is in contact with the base plate. 4 . The package structure of an ultraviolet device according to claim 3 , wherein the lens has a connection structure layer, the connection structure layer is annular, and the connection structure layer is arranged around the boss, and the connection structure layer is annular. 5 . The structural layer is connected to the connecting plate by welding. 5 . The UV device packaging structure according to claim 2 , wherein the substrate is further connected with a second conducting element, and the substrate is located between the first conducting element and the second conducting element. 6 . During the period, the second conducting element is made of conductive material, the number of the second conducting element is two groups, the second conducting element is connected with the conducting plate and corresponds one-to-one, and the two groups are There is a gap between the second conducting elements. 6 . The package structure of an ultraviolet device according to claim 5 , wherein the second conducting element is connected to the conducting plate by connecting posts, the substrate has through holes, and the connecting posts pass through the connecting posts. 7 . The through hole connects the conducting plate and the second conducting element. 7 . The package structure of an ultraviolet device according to claim 5 , wherein the second conductive element is connected with a pad, the number of the pads is two groups, and the pad and the second conductive pad are connected to two groups. 8 . The pass elements are in one-to-one correspondence, and there is a gap between the two groups of the pads. 8 . The UV device packaging structure according to claim 1 , wherein one end of the lens away from the substrate is a spherical structure, the accommodating hole is a truncated truncated structure, and the bottom surface of the accommodating hole is an incident The diameter of the opening of the accommodating hole is smaller than the diameter of the incident surface, and the sidewall of the tapered surface of the accommodating hole is a light-converging surface. 9 . The packaging structure of an ultraviolet device according to claim 8 , wherein the light-converging surface is provided with a high-reflection film coating for ultraviolet light. 10 . 10. A method for manufacturing an ultraviolet device packaging structure according to any one of claims 1-9, wherein the chip is put into the accommodating hole, and the lens is abutted against the substrate , put the chip, the lens and the substrate into the eutectic furnace, evacuate the eutectic furnace, and then fill the protective gas into the eutectic furnace, and the protective gas enters the eutectic furnace In the accommodating hole, the temperature of the eutectic furnace is controlled, and the lens and the substrate are eutectic welded through the first conducting element, and the substrate and the lens are connected to block the A hole is accommodated and the package cavity is formed, and the chip and the protective gas are packaged in the package cavity.

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