CN114855126B - A device and method for surface modification of micro-nano powder - Google Patents
A device and method for surface modification of micro-nano powder Download PDFInfo
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- 230000004048 modification Effects 0.000 title claims abstract description 110
- 238000012986 modification Methods 0.000 title claims abstract description 110
- 239000011858 nanopowder Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000843 powder Substances 0.000 claims abstract description 283
- 238000001704 evaporation Methods 0.000 claims abstract description 37
- 230000008020 evaporation Effects 0.000 claims abstract description 36
- 238000003860 storage Methods 0.000 claims abstract description 35
- 239000000428 dust Substances 0.000 claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000007733 ion plating Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000000576 coating method Methods 0.000 abstract description 16
- 239000011248 coating agent Substances 0.000 abstract description 15
- 238000009700 powder processing Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 229910021389 graphene Inorganic materials 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- -1 oxides Chemical class 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000016507 interphase Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002843 nonmetals Chemical class 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 108010066057 cabin-1 Proteins 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
本发明公开了一种在微纳米粉体表面改性的装置,包括真空舱和振动翻料机构,振动翻料机构包括振动碗和挡尘板,振动碗中部安装有导料柱,振动碗下侧安装有振动器和支柱,真空舱上安装有对振动翻料机构内部粉体进行处理的蒸发源,本发明还提供了一种微纳米粉体表面改性的方法,将粉体放入振动翻料机构采用蒸发源进行改性。本发明通过振动翻料机构与蒸发源配合,使每个粉体表面充分暴露在等离子体下,确保粉体表面改性的高包覆率,通过结合真空送料组件和储料组件,在保证均匀性、致密性、纯度要求的前提下单次粉体处理量可达到公斤级,也实现不同微纳米粉体进行表面改性,具有广泛的应用前景,可用于工业化的大量生产。
The invention discloses a device for surface modification of micro-nano powder, which includes a vacuum chamber and a vibrating turning mechanism. The vibrating turning mechanism includes a vibrating bowl and a dust shield. A guide column is installed in the middle of the vibrating bowl. A vibrator and a pillar are installed on the side, and an evaporation source for processing the powder inside the vibrating turning mechanism is installed on the vacuum chamber. The invention also provides a method for surface modification of micro-nano powder, which puts the powder into the vibrating The turning mechanism is modified with an evaporation source. The invention cooperates with the evaporation source through a vibrating turning mechanism to fully expose the surface of each powder to plasma, ensuring a high coating rate of powder surface modification. By combining the vacuum feeding component and the storage component, the invention ensures uniformity Under the premise of the requirements of sex, compactness and purity, the single-time powder processing capacity can reach kilogram level, and surface modification of different micro-nano powders can also be realized. It has broad application prospects and can be used for industrial mass production.
Description
技术领域Technical field
本发明属于微纳米粉体表面改性技术领域,具体涉及一种在微纳米粉体表面改性的装置及方法。The invention belongs to the technical field of surface modification of micro-nano powders, and specifically relates to a device and method for surface modification of micro-nano powders.
背景技术Background technique
随着人们对高性能材料的不断需求,在粉体冶金技术的研发中遇到了各种困难,其中,影响材料性能的最重要的技术问题就是材料的界面结合,为了解决这个问题,研究者通过掺杂、机械合金化等方法来改善界面问题,但这些方法存在元素分布不均匀等问题。With people's continuous demand for high-performance materials, various difficulties have been encountered in the research and development of powder metallurgy technology. Among them, the most important technical issue affecting material performance is the interface bonding of materials. In order to solve this problem, researchers have Doping, mechanical alloying and other methods are used to improve interface problems, but these methods have problems such as uneven distribution of elements.
因此,为了得到优良的界面结合,研究者设想通过在粉体表面包覆改性膜的核壳结构的方法进行表面改性,随后通过烧结,进而提高界面结合力,然而要想得到优良的界面结合,就必须考虑满足相间热力学的共容性,满足相间热力学的共存性,包覆层与芯核间有较好的润湿性三方面的因素。Therefore, in order to obtain excellent interfacial bonding, researchers envision surface modification by coating the powder surface with a core-shell structure of a modified film, and then sintering to improve the interfacial bonding force. However, in order to obtain excellent interfacial bonding, , it is necessary to consider three factors: satisfying the compatibility of interphase thermodynamics, satisfying the coexistence of interphase thermodynamics, and having good wettability between the cladding layer and the core.
随着研究不断开展,研究者发现异质金属或陶瓷粉体在与金属基材料进行复合时,因固溶度差异较大,或价键的不匹配、或金属与陶瓷的不相容等问题,导致复合后的金属基材料与被复合的粉体之间连接无法达到紧密效果,实验值与理论预测值相差较大,其原因就是润湿性差,与金属基材料不相容,无法有效复合。解决方案是通过对异质金属粉体或陶瓷粉体表面进行改性,制备出与金属基材料相容的改性膜,增大润湿性,进而提高界面结合力。As research continues, researchers have discovered that when heterogeneous metal or ceramic powders are combined with metal-based materials, problems such as large differences in solid solubility, mismatch of valence bonds, or incompatibility between metals and ceramics , resulting in the inability to achieve a tight connection between the compounded metal-based material and the compounded powder, and there is a large difference between the experimental value and the theoretically predicted value. The reason is poor wettability, incompatibility with the metal-based material, and inability to effectively compound . The solution is to modify the surface of heterogeneous metal powder or ceramic powder to prepare a modified film that is compatible with metal-based materials to increase wettability and thereby improve interface bonding force.
粉体表面改性技术,主要有以下几种方法,化学镀、化学气相沉积、物理沉积、电镀、等离子体法等。其中,等离子体法作为一种高质量的表面改性的方法,也逐渐被应用于粉体表面改性。Powder surface modification technology mainly includes the following methods: chemical plating, chemical vapor deposition, physical deposition, electroplating, plasma method, etc. Among them, plasma method, as a high-quality surface modification method, has also been gradually applied to powder surface modification.
公开号为CN101798677A的专利公开了一种通过超声波振动表面镀膜的方法,公开号为CN101082120A的专利公开了一种通过锥形漏斗式螺旋翻动表面镀膜的方法,公开号为CN103160795A的专利公开了一种滚筒式表面镀膜的方法,这三种方法均采用等离子体法制备出表面改性的粉体,在保证均匀性、致密性、纯度要求的前提下,一次性制备粉体量少,只能满足微量的使用要求,目前市场上现有设备每次制备在5g~30g左右,无法满足复合材料制备对改性粉体的需求。The patent with the publication number CN101798677A discloses a method of surface coating by ultrasonic vibration, the patent with the publication number CN101082120A discloses a method of surface coating with a conical funnel spiral turning, and the patent with the publication number CN103160795A discloses a Drum surface coating method, these three methods all use plasma method to prepare surface-modified powder. On the premise of ensuring uniformity, density, and purity requirements, the amount of powder prepared at one time is small and can only meet the requirements of For micro-amount usage requirements, existing equipment on the market currently prepares around 5g~30g each time, which cannot meet the demand for modified powder in composite material preparation.
因此需要一种能够完成大量微纳米粉体表面改性的装置及方法。Therefore, there is a need for a device and method that can complete the surface modification of a large number of micro-nano powders.
发明内容Contents of the invention
本发明所要解决的技术问题在于针对上述现有技术的不足,提供一种在微纳米粉体表面改性的装置及方法。该装置通过一种特殊的振动翻料方式,结合真空送料装置和储料装置,完美的解决了在保证均匀性、致密性、纯度要求的前提下,粉体单次处理粉体量少的问题,且粉体该装置在现有设备的基础上,通过选择不同蒸发源,可实现金属、陶瓷和非金属等改性材料的制备。The technical problem to be solved by the present invention is to provide a device and method for surface modification of micro-nano powders in view of the above-mentioned deficiencies in the prior art. This device uses a special vibration turning method, combined with a vacuum feeding device and a storage device, to perfectly solve the problem of a small amount of powder processed at a time while ensuring uniformity, density, and purity requirements. , and the powder device can realize the preparation of modified materials such as metals, ceramics and non-metals based on existing equipment and by selecting different evaporation sources.
为解决上述技术问题,本发明采用的技术方案是:一种在微纳米粉体表面改性的装置,其特征在于,包括真空舱,所述真空舱中安装有振动翻料机构,所述振动翻料机构包括振动碗,所述振动碗上部安装有对振动碗打开或者关闭的挡尘板,所述振动碗中部安装有导料柱,所述振动碗下侧安装有振动器,所述振动碗下侧还安装有对振动碗进行支撑的支柱,所述真空舱上安装有对振动翻料机构内部粉体进行处理的蒸发源,所述振动碗下部开设有通过导料柱打开或者关闭的导料口。In order to solve the above technical problems, the technical solution adopted by the present invention is: a device for surface modification of micro-nano powder, which is characterized in that it includes a vacuum chamber, and a vibration turning mechanism is installed in the vacuum chamber. The vibration The material turning mechanism includes a vibrating bowl. The upper part of the vibrating bowl is equipped with a dust shield that opens or closes the vibrating bowl. The middle part of the vibrating bowl is equipped with a guide column. A vibrator is installed on the lower side of the vibrating bowl. A pillar is also installed on the lower side of the bowl to support the vibrating bowl. The vacuum chamber is equipped with an evaporation source for processing the powder inside the vibrating turning mechanism. The lower part of the vibrating bowl is provided with a valve that is opened or closed through a guide column. Material guide port.
上述的一种在微纳米粉体表面改性的装置,其特征在于,所述蒸发源为磁控溅射设备的磁控靶源,多弧离子镀设备的电弧装置或电弧源,气体等离子体化设备的电子枪或空心阴极。The above-mentioned device for modifying the surface of micro-nano powder is characterized in that the evaporation source is a magnetron target source of magnetron sputtering equipment, an arc device or arc source of multi-arc ion plating equipment, gas plasma Electron guns or hollow cathodes of chemical equipment.
上述的一种在微纳米粉体表面改性的装置,其特征在于,所述振动碗的底部为球形,所述导料柱和导料口均位于振动碗底部的中心,所述导料柱为圆台状,所述导料柱和振动碗底部通过卡槽连接;所述振动碗侧壁外部安装有多个用于将侧壁内部上粘贴的粉体脱落的振动块;所述振动碗连接有用于将振动碗中粉体带负电的偏压电源。The above-mentioned device for modifying the surface of micro-nano powder is characterized in that the bottom of the vibration bowl is spherical, the guide column and the guide port are located at the center of the bottom of the vibration bowl, and the guide column It is in the shape of a truncated cone, and the material guide column and the bottom of the vibrating bowl are connected through a slot; a plurality of vibrating blocks are installed on the outside of the side wall of the vibrating bowl for shedding the powder pasted on the inside of the side wall; the vibrating bowl is connected There is a bias power supply used to negatively charge the powder in the vibrating bowl.
上述的一种在微纳米粉体表面改性的装置,其特征在于,所述真空舱连接有用于将真空舱抽真空和充入保护气的真空组件,所述真空舱上开设有用于观察振动碗的观察窗。The above-mentioned device for modifying the surface of micro-nano powder is characterized in that the vacuum chamber is connected with a vacuum component for evacuating the vacuum chamber and filling it with protective gas, and the vacuum chamber is provided with a hole for observing vibrations. Bowl viewing window.
上述的一种在微纳米粉体表面改性的装置,其特征在于,所述真空舱外部安装有真空送料组件,所述真空送料组件包括真空室、粉体室和伸进或伸出振动碗的机械伸缩管,所述机械伸缩管将导料柱升起或落下。The above-mentioned device for surface modification of micro-nano powder is characterized in that a vacuum feeding assembly is installed outside the vacuum chamber, and the vacuum feeding assembly includes a vacuum chamber, a powder chamber and a vibration bowl extending into or out of the Mechanical telescopic tube, the mechanical telescopic tube raises or lowers the guide column.
上述的一种在微纳米粉体表面改性的装置,其特征在于,所述真空舱外部安装有储料组件,所述储料组件包括储料室和将储料室与导料口连接的导料管。The above-mentioned device for surface modification of micro-nano powder is characterized in that a material storage component is installed outside the vacuum chamber, and the material storage component includes a material storage chamber and a material storage chamber connected to the material guide port. Feed tube.
另外,本发明提供了一种微纳米粉体表面改性的方法,其特征在于,该方法包括以下步骤:In addition, the present invention provides a method for surface modification of micro-nano powder, which is characterized in that the method includes the following steps:
步骤一、将粉体装入振动碗内,关闭挡尘板,并在真空室和粉体室中装入相同的粉体,得到装有粉体的改性装置;Step 1: Put the powder into the vibrating bowl, close the dust shield, and put the same powder into the vacuum chamber and the powder chamber to obtain a modification device filled with powder;
步骤二、将步骤一中得到的装有粉体的改性装置的真空舱内抽真空后充入氩气,然后对振动碗内的粉体进行加热,并打开挡尘板,得到装有加热粉体的改性装置;Step 2: Evacuate the vacuum chamber of the modification device containing the powder obtained in Step 1 and fill it with argon gas, then heat the powder in the vibration bowl, and open the dust shield to obtain the heated Powder modification device;
步骤三、将步骤二中得到的装有加热粉体的改性装置的振动器和振动块打开,使粉体在振动碗内翻动,同时对振动碗加载偏压电源,得到装有待改性粉体的改性装置;Step 3: Open the vibrator and vibrating block of the modification device equipped with heated powder obtained in step 2, so that the powder is turned in the vibrating bowl, and at the same time, a bias power supply is loaded on the vibrating bowl to obtain the powder to be modified. body modification device;
步骤四、将步骤三中得到的装有待改性粉体的改性装置的蒸发源打开,对粉体进行改性,待振动碗中的粉体改性后关闭蒸发源,关闭挡尘板,移动导料柱,将改性粉体通过导料管进入储料室,得到改性粉体和改性装置;Step 4: Open the evaporation source of the modification device containing the powder to be modified obtained in step 3, and modify the powder. After the powder in the vibrating bowl is modified, close the evaporation source and close the dust shield. Move the guide column and put the modified powder into the storage room through the guide pipe to obtain the modified powder and modification device;
步骤五、将步骤四中得到的改性装置中真空室中的粉体送入振动碗内,将粉体室中粉体送入真空室,然后重复步骤二~步骤四,对振动碗内粉体进行改性,之后将真空室的粉体送入振动碗内,重复步骤二~步骤四,对振动碗内粉体进行改性,最后在储料室中得到改性粉体。Step 5: Send the powder in the vacuum chamber of the modification device obtained in step 4 into the vibrating bowl, send the powder in the powder chamber into the vacuum chamber, and then repeat steps 2 to 4 to clean the powder in the vibrating bowl. The body is modified, and then the powder in the vacuum chamber is sent into the vibration bowl, and steps 2 to 4 are repeated to modify the powder in the vibration bowl, and finally the modified powder is obtained in the storage chamber.
本发明通过将粉体分别装入振动碗、真空室和粉体室,先对振动碗中的粉体进行改性处理,在振动碗中的粉体改性并输出后,将真空室中的粉体送入振动碗进行改性处理然后输出,最后将粉体室中的粉体送入振动碗进行改性处理然后输出,在改性过程中可以源源不断的向粉体室中加入粉体,在不破坏真空舱内的真空条件的情况下持续的进行粉体改性与输出,循环改性;该方法实现在纯金属、合金、陶瓷等各类粉体表面改性,为后期材料性能的研究提供了无限可能。In the present invention, the powder is loaded into the vibrating bowl, the vacuum chamber and the powder chamber respectively, and the powder in the vibrating bowl is first modified. After the powder in the vibrating bowl is modified and output, the powder in the vacuum chamber is The powder is sent to the vibrating bowl for modification and then output. Finally, the powder in the powder chamber is sent to the vibrating bowl for modification and then output. During the modification process, powder can be continuously added to the powder chamber. , continuously carry out powder modification and output without destroying the vacuum conditions in the vacuum chamber, and perform cyclic modification; this method realizes surface modification of various types of powders such as pure metals, alloys, ceramics, etc., and improves the later material properties. research offers endless possibilities.
上述的方法,其特征在于,步骤一中所述粉体的质量为1g~2000g。本发明不仅适用于少量粉体进行改性,也适用于大量的粉体进行改性,并且均具有较高的包覆率,包覆率可达到90%以上。The above method is characterized in that the mass of the powder described in step one is 1g~2000g. The present invention is not only suitable for modification of a small amount of powder, but also suitable for modification of a large amount of powder, and has a high coating rate, and the coating rate can reach more than 90%.
上述的方法,其特征在于,步骤二中所述真空舱内的压力为1.0×10-4Pa~5.0×10-3Pa,所述加热为将粉体加热至50℃~400℃。本发明通过控制空舱内的压力保证改性的效果,本发明加热粉体的目的是增加粉体基材与所镀粉体的结合力,针对不同的粉体基材,选择的加热温度不一样,温度过高容易让粉体引燃,过低结合力不好。The above method is characterized in that the pressure in the vacuum chamber in step 2 is 1.0×10 -4 Pa~5.0×10 -3 Pa, and the heating is to heat the powder to 50°C~400°C. The present invention ensures the modification effect by controlling the pressure in the empty chamber. The purpose of heating the powder in the present invention is to increase the binding force between the powder base material and the plated powder. For different powder base materials, the selected heating temperature varies. Similarly, if the temperature is too high, the powder will easily ignite, and if the temperature is too low, the bonding force will be poor.
上述的方法,其特征在于,步骤三中所述振动器和振动块的振动功率为5W~200W,所述偏压电源输出的电压为200V~500V。本发明通过控制振动器和振动块的振动功率使振动碗中的粉体充分混合,并进行改性,保证了改性的均匀性,也防止粉体粘在振动碗的碗壁上;本发明通过控制偏压电源输出的电压,使振动碗中的微纳米粉体带负电,对蒸发源产生的等离子体产生吸引和加速,从而加快在粉体表面的沉积速度,增强改性膜与粉体表面结合力。The above method is characterized in that the vibration power of the vibrator and the vibration block in step three is 5W~200W, and the voltage output by the bias power supply is 200V~500V. The present invention controls the vibration power of the vibrator and the vibration block to fully mix and modify the powder in the vibrating bowl, thereby ensuring the uniformity of modification and preventing the powder from sticking to the wall of the vibrating bowl; By controlling the voltage output by the bias power supply, the micro-nano powder in the vibrating bowl is negatively charged, attracting and accelerating the plasma generated by the evaporation source, thereby accelerating the deposition speed on the powder surface and enhancing the interaction between the modified film and the powder. Surface adhesion.
本发明与现有技术相比具有以下优点:Compared with the prior art, the present invention has the following advantages:
1、本发明通过真空舱为微纳米粉体表面改性提供真空环境,防止微纳米粉体发生氧化,通过振动翻料机构,使粉体在振动碗中不断振动,粉体通过振动器的作用,使粉体由内到外、往复振动,从振动碗底部向侧壁振动、翻转,进而使粉体表面充分暴露,充分改性,确保粉体表面改性的高包覆率,通过蒸发源,激发出等离子体,对粉体进行改性,根据获取改性膜厚度的不同,通过控制等离子体溅射的时间以及蒸发源电流的大小来准确控制其厚度;通过振动碗下部开设有通过导料柱打开或者关闭的导料口,用于放出改性后的粉体,便于粉体的收集。1. The present invention provides a vacuum environment for surface modification of micro-nano powder through a vacuum chamber to prevent oxidation of micro-nano powder. Through the vibration turning mechanism, the powder is continuously vibrated in the vibrating bowl, and the powder passes through the vibrator. , making the powder vibrate back and forth from the inside to the outside, vibrating and flipping from the bottom of the vibrating bowl to the side wall, thereby fully exposing and fully modifying the powder surface, ensuring a high coating rate of powder surface modification, through the evaporation source , excite plasma and modify the powder. Depending on the thickness of the modified film, its thickness can be accurately controlled by controlling the time of plasma sputtering and the size of the evaporation source current; a conductor is opened at the bottom of the vibrating bowl. The opening or closing of the material column is used to release the modified powder and facilitate the collection of the powder.
2、本发明通过等离子体法结合振动翻料机构在微纳米粉体表面包覆金属、合金或陶瓷薄膜,以达到在对粉体表面改性的目的,为制备高性能复合材料奠定基础,基体纯金属/合金/陶瓷等微纳米粉体及大颗粒粉体外表面包覆纯金属/合金/陶瓷改性膜层,实现了对不同微纳米粉体进行表面改性,且可以制备不同种类的改性膜,根据改性材料膜种类的不同,分为金属、陶瓷(氮化物、氧化物、碳化物等陶瓷相)和非金属(石墨烯、碳膜、硅膜及氮化硼BN),实现不同改性膜厚度和多层改性膜的制备工艺。2. The present invention uses a plasma method combined with a vibration turning mechanism to coat the surface of micro-nano powder with a metal, alloy or ceramic film to achieve the purpose of modifying the powder surface and lay the foundation for the preparation of high-performance composite materials. The surface of pure metal/alloy/ceramics and other micro-nano powders and large particle powders is coated with a pure metal/alloy/ceramic modified film layer, which realizes the surface modification of different micro-nano powders and can prepare different types of Modified membranes are divided into metals, ceramics (ceramic phases such as nitrides, oxides, carbides, etc.) and non-metals (graphene, carbon film, silicon film and boron nitride BN) according to the type of modified material film. Realize the preparation process of different modified film thicknesses and multi-layer modified films.
3、本发明通过设置振动器和振动块使每个粉体表面充分暴露在等离子体下,保证制备改性膜的均匀性,通过结合真空送料组件和储料组件,满足工业化生产需求,单次粉体处理量可达到公斤级。3. The present invention sets up vibrators and vibration blocks to fully expose the surface of each powder to plasma to ensure the uniformity of the modified film. By combining the vacuum feeding component and the material storage component, it meets the needs of industrial production in a single time. The powder processing capacity can reach kilogram level.
4、本发明的微纳米粉体表面改性的方法,实现在纯金属、合金、陶瓷等各类粉体表面改性,为后期材料性能的研究提供了无限可能。4. The method for surface modification of micro-nano powders of the present invention can realize surface modification of various types of powders such as pure metals, alloys, ceramics, etc., providing unlimited possibilities for later research on material properties.
下面通过附图和实施例对本发明的技术方案作进一步的详细描述。The technical solution of the present invention will be described in further detail below through the drawings and examples.
附图说明Description of the drawings
图1是本发明在微纳米粉体表面改性的装置的结构示意图。Figure 1 is a schematic structural diagram of the device for surface modification of micro-nano powder according to the present invention.
图2是本发明真空腔室的结构示意图。Figure 2 is a schematic structural diagram of the vacuum chamber of the present invention.
图3是本发明振动翻料机构的结构示意图。Figure 3 is a schematic structural diagram of the vibrating material turning mechanism of the present invention.
图4是本发明实施例1制备的改性粉体的SEM图。Figure 4 is an SEM image of the modified powder prepared in Example 1 of the present invention.
附图标记说明:Explanation of reference symbols:
具体实施方式Detailed ways
本发明的一种在微纳米粉体表面改性的装置通过实施例1进行详细描述。A device for surface modification of micro-nano powders of the present invention is described in detail through Example 1.
实施例1Example 1
如图1、图2和图3所示,本实施例的在微纳米粉体表面改性的装置包括真空舱1,所述真空舱1中安装有振动翻料机构,所述振动翻料机构包括振动碗2,所述振动碗2上部安装有对振动碗2打开或者关闭的挡尘板3,所述振动碗2中部安装有导料柱4,所述振动碗2下侧安装有振动器5,所述振动碗2下侧还安装有对振动碗2进行支撑的支柱6,所述真空舱1上安装有对振动翻料机构内部粉体进行处理的蒸发源7,所述振动碗2下部开设有通过导料柱4打开或者关闭的导料口。As shown in Figures 1, 2 and 3, the device for surface modification of micro-nano powder in this embodiment includes a vacuum chamber 1. A vibrating turning mechanism is installed in the vacuum chamber 1. The vibrating turning mechanism It includes a vibrating bowl 2. The upper part of the vibrating bowl 2 is equipped with a dust shield 3 that opens or closes the vibrating bowl 2. The middle part of the vibrating bowl 2 is equipped with a guide column 4. A vibrator is installed on the lower side of the vibrating bowl 2. 5. A pillar 6 is also installed on the lower side of the vibrating bowl 2 to support the vibrating bowl 2. An evaporation source 7 is installed on the vacuum chamber 1 to process the powder inside the vibrating turning mechanism. The vibrating bowl 2 The lower part is provided with a material guide port that is opened or closed by the material guide pillar 4.
需要说明的是,通过真空舱1为微纳米粉体表面改性提供真空环境,防止微纳米粉体发生氧化,通过振动翻料机构,使粉体在振动碗2中不断振动,粉体通过振动器5的作用,使粉体由内到外、往复振动,从振动碗2底部向侧壁振动、翻转,进而使粉体表面充分暴露,充分改性,确保粉体表面改性的高包覆率,通过蒸发源7,激发出等离子体,对粉体进行改性,根据获取改性膜厚度的不同,通过控制等离子体溅射的时间以及蒸发源7电流的大小来准确控制其厚度;通过振动碗2下部开设有通过导料柱4打开或者关闭的导料口,用于放出改性后的粉体,便于粉体的收集。It should be noted that the vacuum chamber 1 provides a vacuum environment for the surface modification of the micro-nano powder to prevent oxidation of the micro-nano powder, and the vibration turning mechanism causes the powder to continuously vibrate in the vibrating bowl 2, and the powder passes through the vibration The function of the device 5 makes the powder vibrate back and forth from the inside to the outside, vibrate and flip from the bottom of the vibrating bowl 2 to the side wall, thereby fully exposing and fully modifying the powder surface, ensuring high coverage of the powder surface modification. rate, the plasma is excited through the evaporation source 7, and the powder is modified. According to the thickness of the modified film, its thickness can be accurately controlled by controlling the time of plasma sputtering and the current size of the evaporation source 7; by The lower part of the vibrating bowl 2 is provided with a material guide port that is opened or closed by the material guide column 4 for releasing the modified powder to facilitate the collection of the powder.
需要说明的是,支柱6为弹簧支柱6,振动碗2通过弹簧支柱6支撑,通过弹簧起到减震的作用。It should be noted that the support 6 is a spring support 6, the vibrating bowl 2 is supported by the spring support 6, and the spring plays a role of shock absorption.
本实施例中,蒸发源7为磁控溅射设备的磁控靶源,多弧离子镀设备的电弧装置或电弧源,气体等离子体化设备的电子枪或空心阴极。通过采用不同的蒸发源7适用于不同粉体进行改性。In this embodiment, the evaporation source 7 is a magnetron target source of magnetron sputtering equipment, an arc device or arc source of multi-arc ion plating equipment, an electron gun or a hollow cathode of gas plasma equipment. By using different evaporation sources 7, it is suitable for different powders to be modified.
如图1和图3所示,本实施例中,振动碗2的底部为球形,所述导料柱4和导料口均位于振动碗2底部的中心,所述导料柱4为圆台状,所述导料柱4和振动碗2底部通过卡槽连接;所述振动碗2侧壁外部安装有多个用于将侧壁内部上粘贴的粉体脱落的振动块8;所述振动碗2连接有用于将振动碗2中粉体带负电的偏压电源9。通过振动碗2的底部为球形,导料柱4和导料口均位于振动碗2底部的中心,使振动碗2中的粉体在振动作用下向振动碗2底部的中心集中,并通过导料柱4进行翻滚,粉体如图3中箭头方向运动,在改性完成后进行粉体收集时球形的底部也便于粉体集中收集,导料柱4和振动碗2底部通过卡槽连接,保证两者连接紧密,在改性过程中不会泄露粉体,导料柱4通过真空送料组件的机械伸缩管14提起或放下,控制振动碗2中改性粉末的放出,通过调节振动电机的振动频率,将振动碗2中的公斤级微纳米粉体表面不断地暴露在等离子体物质下,使其具有近乎相同的暴露时间,进而使微纳米粉体表面包覆厚度相同且均匀的改性膜,振动碗2侧壁上的振动块8,振动块8数量没有明确要求,根据粉体在侧壁的粘粘程度进行增加,尺寸根据实际需求可改动,振动使侧壁上粘粘的粉体脱落,进而确保粉体表面改性的高包覆率;通过偏压电源9使振动碗2中的微纳米粉体带负电,对蒸发源7产生的等离子体如金属阳离子或非金属阳离子产生吸引和加速,从而加快在粉体表面的沉积速度,增强改性膜与粉体表面结合力,提高了改性效率。As shown in Figures 1 and 3, in this embodiment, the bottom of the vibrating bowl 2 is spherical, the guide post 4 and the guide opening are located at the center of the bottom of the vibrating bowl 2, and the guide post 4 is truncated. , the guide column 4 and the bottom of the vibrating bowl 2 are connected through a slot; a plurality of vibrating blocks 8 are installed on the outside of the side wall of the vibrating bowl 2 for shedding the powder pasted on the inside of the side wall; the vibrating bowl 2 is connected to a bias power supply 9 for negatively charging the powder in the vibrating bowl 2 . The bottom of the vibrating bowl 2 is spherical, and the guide post 4 and the guide port are located at the center of the bottom of the vibrating bowl 2, so that the powder in the vibrating bowl 2 is concentrated toward the center of the bottom of the vibrating bowl 2 under the action of vibration, and passes through the guide. The material column 4 rolls, and the powder moves in the direction of the arrow in Figure 3. When the powder is collected after the modification is completed, the spherical bottom also facilitates the centralized collection of powder. The guide column 4 and the bottom of the vibration bowl 2 are connected through a slot. To ensure that the two are tightly connected and the powder will not leak during the modification process, the guide column 4 is lifted or lowered through the mechanical telescopic tube 14 of the vacuum feeding assembly to control the release of modified powder in the vibration bowl 2. By adjusting the vibration motor Vibration frequency, the surface of the kilogram-level micro-nano powder in the vibration bowl 2 is continuously exposed to the plasma substance, so that it has almost the same exposure time, so that the surface of the micro-nano powder is coated with the same and uniform modification thickness membrane, the vibrating blocks 8 on the side wall of the vibrating bowl 2, there is no clear requirement for the number of vibrating blocks 8, it can be increased according to the degree of stickiness of the powder on the side wall, and the size can be changed according to actual needs. The vibration causes the powder to stick to the side wall. The particles fall off, thereby ensuring a high coating rate of powder surface modification; the micro-nano powder in the vibrating bowl 2 is negatively charged through the bias power supply 9, and the plasma generated by the evaporation source 7, such as metal cations or non-metal cations, is generated Attraction and acceleration, thereby speeding up the deposition speed on the powder surface, enhancing the binding force between the modified film and the powder surface, and improving the modification efficiency.
如图1所示,本实施例中,真空舱1连接有用于将真空舱1抽真空和充入保护气的真空组件10,所述真空舱1上开设有用于观察振动碗2的观察窗11。通过观察窗11,观察粉体的振动状态来调节振动电机的振动功率,As shown in Figure 1, in this embodiment, the vacuum chamber 1 is connected to a vacuum assembly 10 for evacuating the vacuum chamber 1 and filling it with protective gas. The vacuum chamber 1 is provided with an observation window 11 for observing the vibrating bowl 2. . Through the observation window 11, observe the vibration state of the powder to adjust the vibration power of the vibration motor.
如图1和图3所示,本实施例中,真空舱1外部安装有真空送料组件,所述真空送料组件包括真空室12、粉体室13和伸进或伸出振动碗2的机械伸缩管14,所述机械伸缩管14将导料柱4升起或落下。通过设置真空室12、粉体室13,依次循环将其中的粉体输送至振动碗2,在改性过程中可以源源不断的向粉体室13中加入粉体,在不破坏真空舱1内的真空条件的情况下持续的进行粉体改性与输出,循环改性,通过设置机械伸缩管14将真空室12内的粉体放入振动碗2中,将要表面改性的粉体分别放入真空室12和粉体室13,当振动碗2中的粉体表面改性完成后,导入储料组件后,通过机械伸缩管14将真空室12内的微纳米粉体导入振动碗2中,然后将粉体室13内的粉体导入真空室12,抽真空,为连续生产作准备,在向振动碗2中加粉体时不需要破坏真空环境,不影响表面改性,可进行连续表面改性。As shown in Figures 1 and 3, in this embodiment, a vacuum feeding assembly is installed outside the vacuum cabin 1. The vacuum feeding assembly includes a vacuum chamber 12, a powder chamber 13 and a mechanical telescopic tube extending into or out of the vibrating bowl 2. 14. The mechanical telescopic tube 14 raises or lowers the guide column 4. By setting up the vacuum chamber 12 and the powder chamber 13, the powder therein is transported to the vibrating bowl 2 in a circular cycle. During the modification process, powder can be continuously added to the powder chamber 13 without destroying the vacuum chamber 1. Continuously carry out powder modification and output under vacuum conditions, and perform cyclic modification. The powder in the vacuum chamber 12 is put into the vibrating bowl 2 by setting a mechanical telescopic tube 14, and the powder to be surface modified is placed separately. Enter the vacuum chamber 12 and the powder chamber 13. After the surface modification of the powder in the vibrating bowl 2 is completed, it is introduced into the storage assembly, and the micro-nano powder in the vacuum chamber 12 is introduced into the vibrating bowl 2 through the mechanical telescopic tube 14. , and then introduce the powder in the powder chamber 13 into the vacuum chamber 12 and evacuate it to prepare for continuous production. When adding powder to the vibrating bowl 2, there is no need to destroy the vacuum environment and it will not affect the surface modification, and continuous production can be carried out. Surface modification.
需要说明的是,振动碗2和挡尘板3之间存在2cm~3cm的间隙,当挡尘板3关闭,通过导料管16将导柱从卡槽顶起,粉体从而进入导料管16,该设备中的管、槽都为可伸缩设计,增加装置的可调控性。It should be noted that there is a gap of 2cm~3cm between the vibration bowl 2 and the dust shield 3. When the dust shield 3 is closed, the guide post is lifted from the slot through the guide tube 16, and the powder enters the guide tube. 16. The tubes and slots in this equipment are telescopically designed to increase the controllability of the device.
如图1所示,本实施例中,真空舱1外部安装有储料组件,所述储料组件包括储料室15和将储料室15与导料口连接的导料管16。通过导料管16将改性后的粉体导入储料组件,通过储料组件对粉体进行真空打包,避免污染。当振动碗2中的粉体完成改性后,移开振动碗2中的导料柱4,改性粉体通过导料管16进入储料室15,储料室15内置真空封口机,改性粉体进入真空包装袋内,抽真空打包,更好的避免粉体的氧化污染。As shown in FIG. 1 , in this embodiment, a material storage assembly is installed outside the vacuum chamber 1 . The material storage assembly includes a material storage chamber 15 and a material guide pipe 16 connecting the material storage chamber 15 and the material guide port. The modified powder is introduced into the storage assembly through the feed tube 16, and the powder is vacuum packed through the storage assembly to avoid contamination. After the powder in the vibrating bowl 2 has been modified, remove the guide column 4 in the vibrating bowl 2, and the modified powder enters the storage chamber 15 through the guide tube 16. The storage chamber 15 has a built-in vacuum sealing machine. The powder enters the vacuum packaging bag and is vacuum packed to better avoid oxidation contamination of the powder.
本发明的一种微纳米粉体表面改性的方法通过实施例2~实施例4进行详细描述。A method for surface modification of micro-nano powders of the present invention is described in detail through Examples 2 to 4.
实施例2Example 2
本实施例包括以下步骤:This embodiment includes the following steps:
步骤一、将粉体分为三等份分别装入振动碗2、真空室12和粉体室13,关闭挡尘板3,得到装有粉体的改性装置;所述粉体为总量150g,粒径50nm~100nm的Ti粉;Step 1: Divide the powder into three equal parts and put them into the vibration bowl 2, the vacuum chamber 12 and the powder chamber 13 respectively, close the dust shield 3, and obtain a modification device filled with powder; the powder is the total amount 150g, Ti powder with particle size 50nm~100nm;
步骤二、将步骤一中得到的装有粉体的改性装置的真空舱1内抽真空后充入氩气,然后对振动碗2内的粉体进行加热,并打开挡尘板3,得到装有加热粉体的改性装置;所述真空舱1内的压力为1.0×10-4Pa,所述加热为将粉体加热至120℃;Step 2: Evacuate the vacuum chamber 1 of the modification device containing the powder obtained in step 1 and fill it with argon gas, then heat the powder in the vibration bowl 2 and open the dust shield 3 to obtain Equipped with a modification device for heating the powder; the pressure in the vacuum chamber 1 is 1.0×10 -4 Pa, and the heating is to heat the powder to 120°C;
步骤三、将步骤二中得到的装有加热粉体的改性装置的振动器5和振动块8打开,使粉体在振动碗2内翻动,同时对振动碗2加载偏压电源9,得到装有待改性粉体的改性装置;所述振动器5和振动块8的振动功率为5W~100W,所述偏压电源9输出的电压为200V;Step 3: Open the vibrator 5 and the vibrating block 8 equipped with the modification device for heating the powder obtained in the step 2, so that the powder is turned over in the vibrating bowl 2, and at the same time, the bias power supply 9 is loaded on the vibrating bowl 2 to obtain A modification device is equipped with the powder to be modified; the vibration power of the vibrator 5 and the vibration block 8 is 5W~100W, and the voltage output by the bias power supply 9 is 200V;
步骤四、将步骤三中得到的装有待改性粉体的改性装置的蒸发源7打开,对粉体进行改性,待振动碗2中的粉体改性后关闭蒸发源7,关闭挡尘板3,移动导料柱4,将改性粉体通过导料管16进入储料室15,得到改性粉体和改性装置;所述蒸发源7为三个磁控溅射电源,配备直流电源,采用高纯Cu金属靶材,激发出Cu离子,调节三个磁控靶的角度,使Cu离子在振动碗2中溅射面积最大;Step 4: Open the evaporation source 7 of the modification device containing the powder to be modified obtained in step 3 to modify the powder. After the powder in the vibrating bowl 2 is modified, close the evaporation source 7 and close the barrier. Dust plate 3 moves the material guide column 4, and the modified powder enters the material storage chamber 15 through the material guide tube 16 to obtain the modified powder and modification device; the evaporation source 7 is three magnetron sputtering power supplies, Equipped with a DC power supply and using high-purity Cu metal target material to excite Cu ions, and adjust the angles of the three magnetron targets to maximize the sputtering area of Cu ions in the vibrating bowl 2;
步骤五、将步骤四中得到的改性装置中真空室12中的粉体送入振动碗2内,将粉体室13中粉体送入真空室12,然后重复步骤二~步骤四,对振动碗2内粉体进行改性,之后将真空室12的粉体送入振动碗2内,重复步骤二~步骤四,对振动碗2内粉体进行改性,最后在储料室15中得到改性粉体。Step 5: Send the powder in the vacuum chamber 12 of the modification device obtained in step 4 into the vibrating bowl 2, send the powder in the powder chamber 13 into the vacuum chamber 12, and then repeat steps 2 to 4. The powder in the vibrating bowl 2 is modified, and then the powder in the vacuum chamber 12 is sent into the vibrating bowl 2. Repeat steps two to four to modify the powder in the vibrating bowl 2, and finally in the storage chamber 15 Modified powder was obtained.
经检测,本实施例制备的改性粉体为在Ti粉表面制备金属Cu层,包覆率达92%以上,改性后的粉体可以制备Ti合金复合增强材料,使强度和塑性显著提升。After testing, the modified powder prepared in this example prepares a metallic Cu layer on the surface of Ti powder, with a coating rate of more than 92%. The modified powder can prepare Ti alloy composite reinforced materials, significantly improving the strength and plasticity. .
图4是本实施例制备的改性粉体的SEM图,从图4中可以看出Ti粉表面包覆了明显的Cu层,且包覆均匀连续,可以实现钛粉表面改性的目的。Figure 4 is an SEM image of the modified powder prepared in this embodiment. It can be seen from Figure 4 that the surface of the Ti powder is coated with an obvious Cu layer, and the coating is uniform and continuous, which can achieve the purpose of surface modification of the titanium powder.
实施例3Example 3
本实施例包括以下步骤:This embodiment includes the following steps:
步骤一、将粉体装入振动碗2内,关闭挡尘板3,得到装有粉体的改性装置;所述粉体为500g,粒径200μm~300μm的Al2O3粉;Step 1: Put the powder into the vibrating bowl 2, close the dust shield 3, and obtain a modification device filled with powder; the powder is 500g Al 2 O 3 powder with a particle size of 200 μm ~ 300 μm;
步骤二、将步骤一中得到的装有粉体的改性装置的真空舱1内抽真空后充入氩气,然后对振动碗2内的粉体进行加热,并打开挡尘板3,得到装有加热粉体的改性装置;所述真空舱1内的压力为2.0×10-3Pa,所述加热为将粉体加热至100℃;Step 2: Evacuate the vacuum chamber 1 of the modification device containing the powder obtained in step 1 and fill it with argon gas, then heat the powder in the vibration bowl 2 and open the dust shield 3 to obtain Equipped with a modification device for heating the powder; the pressure in the vacuum chamber 1 is 2.0×10 -3 Pa, and the heating is to heat the powder to 100°C;
步骤三、将步骤二中得到的装有加热粉体的改性装置的振动器5和振动块8打开,使粉体在振动碗2内翻动,同时对振动碗2加载偏压电源9,得到装有待改性粉体的改性装置;所述振动器5和振动块8的振动功率为50W~100W,所述偏压电源9输出的电压为200V;Step 3: Open the vibrator 5 and the vibrating block 8 equipped with the modification device for heating the powder obtained in the step 2, so that the powder is turned over in the vibrating bowl 2, and at the same time, the bias power supply 9 is loaded on the vibrating bowl 2 to obtain A modification device is equipped with the powder to be modified; the vibration power of the vibrator 5 and the vibration block 8 is 50W~100W, and the voltage output by the bias power supply 9 is 200V;
步骤四、将步骤三中得到的装有待改性粉体的改性装置的蒸发源7打开,对粉体进行改性,待振动碗2中的粉体改性后关闭蒸发源7,关闭挡尘板3,移动导料柱4,将改性粉体通过导料管16进入储料室15,在储料室15中得到改性粉体;所述蒸发源7为三个分别激发出Cu、Zr和Cr的磁控溅射电源。Step 4: Open the evaporation source 7 of the modification device containing the powder to be modified obtained in step 3 to modify the powder. After the powder in the vibrating bowl 2 is modified, close the evaporation source 7 and close the barrier. Dust plate 3 moves the material guide column 4, and the modified powder enters the material storage chamber 15 through the material guide tube 16, and the modified powder is obtained in the material storage chamber 15; the evaporation sources 7 are three, respectively, to excite Cu , Zr and Cr magnetron sputtering power supply.
经检测,本实施例制备的改性粉体为在Al2O3粉表面制备金属Cu、Zr、Cr层,包覆率达93%以上,改性后的粉体是很好的合金增强相,尤其在高熵合金中有显著的增强效果。After testing, the modified powder prepared in this example is to prepare metal Cu, Zr, and Cr layers on the surface of Al 2 O 3 powder, with a coating rate of more than 93%. The modified powder is a good alloy reinforcement phase. , especially in high-entropy alloys, which has a significant reinforcing effect.
实案例4Real case 4
本实施例包括以下步骤:This embodiment includes the following steps:
步骤一、将粉体分为三等份分别装入振动碗2、真空室12和粉体室13,关闭挡尘板3,得到装有粉体的改性装置;所述粉体为总量500g,粒径0.5mm~1mm的Ni3Al粉;Step 1: Divide the powder into three equal parts and put them into the vibration bowl 2, the vacuum chamber 12 and the powder chamber 13 respectively, close the dust shield 3, and obtain a modification device filled with powder; the powder is the total amount 500g Ni 3 Al powder with particle size 0.5mm~1mm;
步骤二、将步骤一中得到的装有粉体的改性装置的真空舱1内抽真空后充入氩气,然后对振动碗2内的粉体进行加热,并打开挡尘板3,得到装有加热粉体的改性装置;所述真空舱1内的压力为2.0×10-3Pa,所述加热为将粉体加热至200℃;Step 2: Evacuate the vacuum chamber 1 of the modification device containing the powder obtained in step 1 and fill it with argon gas, then heat the powder in the vibration bowl 2 and open the dust shield 3 to obtain Equipped with a modification device for heating the powder; the pressure in the vacuum chamber 1 is 2.0×10 -3 Pa, and the heating is to heat the powder to 200°C;
步骤三、将步骤二中得到的装有加热粉体的改性装置的振动器5和振动块8打开,使粉体在振动碗2内翻动,得到装有待改性粉体的改性装置;所述振动器5和振动块8的振动功率为100W~200W;Step 3: Open the vibrator 5 and the vibration block 8 of the modification device equipped with heated powder obtained in step 2, so that the powder is turned over in the vibrating bowl 2 to obtain a modification device equipped with the powder to be modified; The vibration power of the vibrator 5 and the vibration block 8 is 100W~200W;
步骤四、将步骤三中得到的装有待改性粉体的改性装置的蒸发源7打开,对粉体进行改性,待振动碗2中的粉体改性后关闭蒸发源7,关闭挡尘板3,移动导料柱4,将改性粉体通过导料管16进入储料室15,得到改性粉体和改性装置;所述蒸发源7为气体等离子体发生源,并配备相应电源,在气体等离子体发生源处通入氩气作为热电子激发气体,在热电子出口处充入乙炔气体,将乙炔气体裂解为碳离子和氢离子,碳离子沉积到Ni3Al粉体表面,形成SP3键的石墨烯Gr,因氢离子的存在,此处得到的并非纯石墨烯Gr;Step 4: Open the evaporation source 7 of the modification device containing the powder to be modified obtained in step 3 to modify the powder. After the powder in the vibrating bowl 2 is modified, close the evaporation source 7 and close the barrier. The dust plate 3 moves the material guide column 4, and the modified powder enters the material storage chamber 15 through the material guide tube 16 to obtain the modified powder and the modification device; the evaporation source 7 is a gas plasma generation source and is equipped with According to the power supply, argon gas is introduced into the gas plasma generation source as the hot electron excitation gas, and acetylene gas is filled into the hot electron outlet to crack the acetylene gas into carbon ions and hydrogen ions, and the carbon ions are deposited into the Ni 3 Al powder. On the surface, graphene Gr forms SP3 bonds. Due to the presence of hydrogen ions, what is obtained here is not pure graphene Gr;
步骤五、将步骤四中得到的改性装置中真空室12中的粉体送入振动碗2内,将粉体室13中粉体送入真空室12,然后重复步骤二~步骤四,对振动碗2内粉体进行改性,之后将真空室12的粉体送入振动碗2内,重复步骤二~步骤四,对振动碗2内粉体进行改性,最后在储料室15中得到改性粉体。Step 5: Send the powder in the vacuum chamber 12 of the modification device obtained in step 4 into the vibrating bowl 2, send the powder in the powder chamber 13 into the vacuum chamber 12, and then repeat steps 2 to 4. The powder in the vibrating bowl 2 is modified, and then the powder in the vacuum chamber 12 is sent into the vibrating bowl 2. Repeat steps two to four to modify the powder in the vibrating bowl 2, and finally in the storage chamber 15 Modified powder was obtained.
经检测,本实施例制备的改性粉体为在Ni3Al粉表面制备石墨烯层,包覆率达93%以上,石墨烯因具备高强度的特点,在高强韧合金的制备中得到了广泛关注,通过这种方式将石墨烯包覆在粉体表面,从根本上解决了石墨烯在粉体冶金中分布不均匀的问题。After testing, the modified powder prepared in this example is a graphene layer prepared on the surface of Ni 3 Al powder, with a coating rate of more than 93%. Due to its high strength, graphene has been used in the preparation of high-strength alloys. Widely concerned, coating graphene on the powder surface in this way fundamentally solves the problem of uneven distribution of graphene in powder metallurgy.
实施例5Example 5
本实施例包括以下步骤:This embodiment includes the following steps:
步骤一、将粉体分为三等份分别装入振动碗2、真空室12和粉体室13,关闭挡尘板3,得到装有粉体的改性装置;所述粉体为总量2000g,粒径200nm~500nm的Ti粉;Step 1: Divide the powder into three equal parts and put them into the vibration bowl 2, the vacuum chamber 12 and the powder chamber 13 respectively, close the dust shield 3, and obtain a modification device filled with powder; the powder is the total amount 2000g, Ti powder with particle size 200nm~500nm;
步骤二、将步骤一中得到的装有粉体的改性装置的真空舱1内抽真空后充入氩气,然后对振动碗2内的粉体进行加热,并打开挡尘板3,得到装有加热粉体的改性装置;所述真空舱1内的压力为5.0×10-3Pa,所述加热为将粉体加热至400℃;Step 2: Evacuate the vacuum chamber 1 of the modification device containing the powder obtained in step 1 and fill it with argon gas, then heat the powder in the vibration bowl 2 and open the dust shield 3 to obtain Equipped with a modification device for heating the powder; the pressure in the vacuum chamber 1 is 5.0×10 -3 Pa, and the heating is to heat the powder to 400°C;
步骤三、将步骤二中得到的装有加热粉体的改性装置的振动器5和振动块8打开,使粉体在振动碗2内翻动,同时对振动碗2加载偏压电源9,得到装有待改性粉体的改性装置;所述振动器5和振动块8的振动功率为150W~200W,所述偏压电源9输出的电压为50V;Step 3: Open the vibrator 5 and the vibrating block 8 equipped with the modification device for heating the powder obtained in the step 2, so that the powder is turned over in the vibrating bowl 2, and at the same time, the bias power supply 9 is loaded on the vibrating bowl 2 to obtain A modification device equipped with the powder to be modified; the vibration power of the vibrator 5 and the vibration block 8 is 150W~200W, and the voltage output by the bias power supply 9 is 50V;
步骤四、将步骤三中得到的装有待改性粉体的改性装置的蒸发源7打开,对粉体进行改性,待振动碗2中的粉体改性后关闭蒸发源7,关闭挡尘板3,移动导料柱4,将改性粉体通过导料管16进入储料室15,得到改性粉体和改性装置;所述蒸发源7为三个磁控溅射电源,配备直流电源,采用高纯Cu金属靶材,激发出Cu离子,调节三个磁控靶的角度,使Cu离子在振动碗2中溅射面积最大;Step 4: Open the evaporation source 7 of the modification device containing the powder to be modified obtained in step 3 to modify the powder. After the powder in the vibrating bowl 2 is modified, close the evaporation source 7 and close the barrier. Dust plate 3 moves the material guide column 4, and the modified powder enters the material storage chamber 15 through the material guide tube 16 to obtain the modified powder and modification device; the evaporation source 7 is three magnetron sputtering power supplies, Equipped with a DC power supply and using high-purity Cu metal target material to excite Cu ions, and adjust the angles of the three magnetron targets to maximize the sputtering area of Cu ions in the vibrating bowl 2;
步骤五、将步骤四中得到的改性装置中真空室12中的粉体送入振动碗2内,将粉体室13中粉体送入真空室12,然后重复步骤二~步骤四,对振动碗2内粉体进行改性,之后将真空室12的粉体送入振动碗2内,重复步骤二~步骤四,对振动碗2内粉体进行改性,最后在储料室15中得到改性粉体。Step 5: Send the powder in the vacuum chamber 12 of the modification device obtained in step 4 into the vibrating bowl 2, send the powder in the powder chamber 13 into the vacuum chamber 12, and then repeat steps 2 to 4. The powder in the vibrating bowl 2 is modified, and then the powder in the vacuum chamber 12 is sent into the vibrating bowl 2. Repeat steps two to four to modify the powder in the vibrating bowl 2, and finally in the storage chamber 15 Modified powder was obtained.
经检测,本实施例制备的改性粉体为在Ti粉表面制备金属Cu层,包覆率达92%以上,改性后的粉体可以制备Ti合金复合增强材料,使强度和塑性显著提升。After testing, the modified powder prepared in this example prepares a metallic Cu layer on the surface of Ti powder, with a coating rate of more than 92%. The modified powder can prepare Ti alloy composite reinforced materials, significantly improving the strength and plasticity. .
实施例6Example 6
本实施例包括以下步骤:This embodiment includes the following steps:
步骤一、将粉体分为三等份分别装入振动碗2、真空室12和粉体室13,关闭挡尘板3,得到装有粉体的改性装置;所述粉体为总量1500g,粒径500μm~800μm的Ti粉;Step 1: Divide the powder into three equal parts and put them into the vibration bowl 2, the vacuum chamber 12 and the powder chamber 13 respectively, close the dust shield 3, and obtain a modification device filled with powder; the powder is the total amount 1500g Ti powder with particle size 500μm~800μm;
步骤二、将步骤一中得到的装有粉体的改性装置的真空舱1内抽真空后充入氩气,然后对振动碗2内的粉体进行加热,并打开挡尘板3,得到装有加热粉体的改性装置;所述真空舱1内的压力为1.0×10-4Pa,所述加热为将粉体加热至50℃;Step 2: Evacuate the vacuum chamber 1 of the modification device containing the powder obtained in step 1 and fill it with argon gas, then heat the powder in the vibration bowl 2 and open the dust shield 3 to obtain Equipped with a modification device for heating the powder; the pressure in the vacuum chamber 1 is 1.0×10 -4 Pa, and the heating is to heat the powder to 50°C;
步骤三、将步骤二中得到的装有加热粉体的改性装置的振动器5和振动块8打开,使粉体在振动碗2内翻动,同时对振动碗2加载偏压电源9,得到装有待改性粉体的改性装置;所述振动器5和振动块8的振动功率为180W~200W,所述偏压电源9输出的电压为100V;Step 3: Open the vibrator 5 and the vibrating block 8 equipped with the modification device for heating the powder obtained in the step 2, so that the powder is turned over in the vibrating bowl 2, and at the same time, the bias power supply 9 is loaded on the vibrating bowl 2 to obtain A modification device is equipped with the powder to be modified; the vibration power of the vibrator 5 and the vibration block 8 is 180W~200W, and the voltage output by the bias power supply 9 is 100V;
步骤四、将步骤三中得到的装有待改性粉体的改性装置的蒸发源7打开,对粉体进行改性,待振动碗2中的粉体改性后关闭蒸发源7,关闭挡尘板3,移动导料柱4,将改性粉体通过导料管16进入储料室15,得到改性粉体和改性装置;所述蒸发源7为三个磁控溅射电源,配备直流电源,采用高纯Cu金属靶材,激发出Cu离子,调节三个磁控靶的角度,使Cu离子在振动碗2中溅射面积最大;Step 4: Open the evaporation source 7 of the modification device containing the powder to be modified obtained in step 3 to modify the powder. After the powder in the vibrating bowl 2 is modified, close the evaporation source 7 and close the barrier. Dust plate 3 moves the material guide column 4, and the modified powder enters the material storage chamber 15 through the material guide tube 16 to obtain the modified powder and modification device; the evaporation source 7 is three magnetron sputtering power supplies, Equipped with a DC power supply and using high-purity Cu metal target material to excite Cu ions, and adjust the angles of the three magnetron targets to maximize the sputtering area of Cu ions in the vibrating bowl 2;
步骤五、将步骤四中得到的改性装置中真空室12中的粉体送入振动碗2内,将粉体室13中粉体送入真空室12,然后重复步骤二~步骤四,对振动碗2内粉体进行改性,之后将真空室12的粉体送入振动碗2内,重复步骤二~步骤四,对振动碗2内粉体进行改性,最后在储料室15中得到改性粉体。Step 5: Send the powder in the vacuum chamber 12 of the modification device obtained in step 4 into the vibrating bowl 2, send the powder in the powder chamber 13 into the vacuum chamber 12, and then repeat steps 2 to 4. The powder in the vibrating bowl 2 is modified, and then the powder in the vacuum chamber 12 is sent into the vibrating bowl 2. Repeat steps two to four to modify the powder in the vibrating bowl 2, and finally in the storage chamber 15 Modified powder was obtained.
经检测,本实施例制备的改性粉体为在Ti粉表面制备金属Cu层,包覆率达91%以上,改性后的粉体可以制备Ti合金复合增强材料,使强度和塑性显著提升。After testing, the modified powder prepared in this example prepares a metallic Cu layer on the surface of Ti powder, with a coating rate of more than 91%. The modified powder can prepare Ti alloy composite reinforced materials, significantly improving the strength and plasticity. .
以上所述,仅是本发明的较佳实施例,并非对本发明作任何限制。凡是根据发明技术实质对以上实施例所作的任何简单修改、变更以及等效变化,均仍属于本发明技术方案的保护范围内。The above descriptions are only preferred embodiments of the present invention and do not limit the present invention in any way. Any simple modifications, changes and equivalent changes made to the above embodiments based on the technical essence of the invention still fall within the protection scope of the technical solution of the invention.
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