CN114833716A - Chemical mechanical polishing equipment and polishing method - Google Patents
Chemical mechanical polishing equipment and polishing method Download PDFInfo
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- CN114833716A CN114833716A CN202210555700.1A CN202210555700A CN114833716A CN 114833716 A CN114833716 A CN 114833716A CN 202210555700 A CN202210555700 A CN 202210555700A CN 114833716 A CN114833716 A CN 114833716A
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- 238000005498 polishing Methods 0.000 title claims abstract description 201
- 239000000126 substance Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 125
- 238000004140 cleaning Methods 0.000 claims abstract description 59
- 238000005507 spraying Methods 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims description 18
- 239000007921 spray Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 27
- 230000007547 defect Effects 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 102
- 239000012530 fluid Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of chemical mechanical polishing, in particular to chemical mechanical polishing equipment and a polishing method. A load carrying platform comprising: a bearing part with a bearing plane; the grinding part is arranged on the bearing part and is used for contacting with the wafer; the liquid output part is arranged on the outer side of the bearing part and is suitable for spraying liquid onto the grinding part so as to pre-grind and/or post-grind the wafer and clean the grinding part. The invention pastes a grinding pad on the bearing platform of the bearing part, when a wafer enters the loading and unloading bearing platform, the grinding head loads the wafer and presses down to the grinding pad for pre-grinding, and after the ground wafer enters the loading and unloading bearing platform, the water grinding is carried out, so that the functions of taking and unloading the wafer and carrying out pre-grinding, water grinding and cleaning are unified, and the functions of the loading and unloading bearing platform are more diversified; the water mill is used for cleaning the ground or chemical residues on the surface of the wafer, so that the surface defects of the wafer are reduced, and the product yield is improved.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to chemical mechanical polishing equipment and a polishing method.
Background
The chemical mechanical polishing technology is a technology combining chemical action and mechanical action, firstly, the surface material of a workpiece and an oxidant, a catalyst and the like in polishing solution are subjected to chemical reaction to generate a soft layer which is relatively easy to remove, then the soft layer is removed under the mechanical action of an abrasive in the polishing solution and a polishing pad to expose the surface of the workpiece again, and then the chemical reaction is carried out, so that the surface polishing of the workpiece is completed in the alternate implementation of the chemical action process and the mechanical action process.
At present, when the surface of a wafer bearing table is ground in a processing process, wafers are contacted with the wafer from time to time after grinding, various grinding and chemical residues on the surface of the bearing table are adhered to the surface of the wafer, the wafer entering a grinding platform causes the phenomenon that the residues sink into metal on the surface of the wafer to cause various defects, the wafer entering a cleaning area has the phenomenon that the cleaning difficulty is increased and the cleaning cannot be carried out, various defects are also caused, and the product yield is reduced.
Disclosure of Invention
Therefore, the present invention is directed to overcome the defects of the prior art that the yield of wafers is reduced by polishing and chemical residues on a wafer carrier, and to provide a chemical mechanical polishing apparatus and a polishing method.
In order to solve the above problems, the present invention provides a loading and unloading carrier table, comprising: a bearing part with a bearing plane; the grinding part is arranged on the bearing part and is used for contacting with the wafer; the liquid output part is arranged on the outer side of the bearing part and is suitable for spraying liquid onto the grinding part so as to pre-grind and/or post-grind the wafer and clean the grinding part.
Optionally, the bearing part includes a power part and a bearing platform, a bearing plane is formed on the upper surface of the bearing platform, and the power part is connected with the bearing platform to drive the bearing platform to rotate around the axis of the bearing platform.
Optionally, a plurality of grooves are arranged at intervals on the upper surface of the grinding part.
Optionally, the liquid output portion includes a polishing liquid output portion and a cleaning liquid output portion, the polishing liquid output portion is suitable for spraying polishing liquid onto the polishing portion, and the cleaning liquid output portion is suitable for spraying cleaning liquid onto the polishing portion, so as to clean and polish the wafer.
Optionally, a protective cover is further arranged around the bearing part, and the protective cover is used for preventing liquid or particles from splashing.
Optionally, the protective cover surrounds the periphery and the bottom of the bearing platform, and a water outlet is formed in the protective cover.
The present invention also provides a chemical mechanical polishing apparatus, comprising: a polishing head and the loading and unloading bearing platform.
The invention also provides a chemical mechanical polishing method, which comprises the following steps: placing the wafer on a polishing portion of a load-lock table before and/or after main polishing of the wafer; the liquid output part of the loading and unloading bearing table sprays liquid onto the grinding part, and the wafer is pre-ground and/or post-ground through the grinding head; the polishing section is cleaned.
Optionally, the liquid output part of the loading/unloading carrier sprays the liquid onto the polishing part, and in the step of pre-polishing and/or post-polishing the wafer by the polishing head, the flow rate of the polishing liquid output by the liquid output part is 50-80 ml/min, and/or the pre-polishing time is 5-8 seconds, and/or the rotation speed of the polishing head is 45-50 rpm/min, and/or the post-polishing time is 4-6 seconds.
Optionally, in the step of cleaning the polishing part, the flow rate of the cleaning liquid output by the liquid output part is 200-250 ml/min, and/or the cleaning time is 3-5 seconds, and/or the rotation speed of the loading part of the loading and unloading bearing table is 50-60 rpm/min.
The invention has the following advantages:
1. the liquid output part is arranged outside the bearing part, the liquid output part sprays liquid to the grinding part, the wafer can be pre-ground and/or post-ground on the loading and unloading bearing platform, and the grinding part is cleaned, the loading and unloading bearing platform integrates the function of sucking and unloading the wafer with the pre-grinding and/or post-grinding function, the newly loaded wafer can be pre-ground, the wafer can directly enter the main grinding after pre-grinding, the related pre-grinding time is saved, the main grinding time is shortened, meanwhile, the wafer is post-ground after the main grinding enters the loading and unloading bearing platform, the post-grinding can clean the surface grinding or chemical residues of the wafer, the surface defects of the wafer can be reduced by the post-grinding after pre-grinding and main grinding, and the product yield is improved.
2. The liquid output part comprises a grinding liquid output part and a cleaning liquid output part, the grinding liquid output part is suitable for spraying grinding liquid onto the grinding part, the cleaning liquid output part is suitable for spraying cleaning liquid onto the grinding part so as to clean and grind the wafer, the grinding pad is cleaned before pre-grinding, after pre-grinding and after water grinding, residues on the grinding pad can be cleaned, the yield of the wafer is improved, and the problems that in the prior art, the residues are not cleaned completely, and the wafer stuck with the residues is embedded into the surface of the wafer when the wafer is subjected to main grinding, so that the wafer is defective, scratched, pot holes and surface corrosion are solved.
3. The protection casing surrounds the periphery and the bottom of load-bearing platform, is equipped with the outlet on the protection casing, and the outlet connection drain pipe. The protection casing surrounds the periphery and the bottom of load-bearing platform, can effectually prevent splashing of operation in-process liquid, makes the ground liquid accessory substance and other residues collect the protection casing bottom region simultaneously, discharges through outlet and drain pipe, can not pollute operational environment.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 shows a perspective view of a load carrier platform according to an embodiment of the invention;
FIG. 2 shows a schematic front view of the loading platform of FIG. 1;
FIG. 3 illustrates a schematic top view of the polishing pad of the load lock platen of FIG. 1;
FIG. 4 is a schematic diagram of the chemical mechanical polishing method of the present invention;
FIG. 5 is a flow chart illustrating the chemical mechanical polishing method of the present invention.
Description of reference numerals:
10. a bearing part; 11. a power section; 12. a load-bearing platform; 20. a grinding fluid output part; 21. a cleaning liquid output section; 30. a protective cover; 31. a water outlet; 40. a grinding head; 50. a polishing pad; 51. and (4) a groove.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1 to 2, the loading/unloading platform of the present embodiment includes: a bearing part 10 having a bearing plane; a grinding part arranged on the bearing part 10 and used for contacting with the wafer; and the liquid output part is arranged outside the bearing part 10 and is suitable for spraying liquid onto the grinding part so as to pre-grind and/or post-grind the wafer and clean the grinding part.
By applying the loading and unloading bearing table of the embodiment, the liquid output part is arranged outside the bearing part 10, the liquid output part sprays liquid onto the grinding part, the wafer can be pre-ground and/or post-ground on the loading and unloading bearing table, and the grinding part is cleaned, the loading and unloading bearing table integrates the function of sucking and unloading the wafer with the pre-grinding and/or post-grinding function, the newly loaded wafer can be pre-ground, the wafer can directly enter the main grinding after pre-grinding, the related pre-grinding time is saved, the main grinding time is shortened, meanwhile, the wafer is post-ground after entering the loading and unloading bearing table after the main grinding, the post-grinding can clean the surface grinding or chemical residues of the wafer, the surface defects of the wafer can be reduced by the post-grinding after pre-grinding and the main grinding, and the product yield is improved.
Specifically, the post-polishing is a water polishing or the like, and the water polishing is performed on the wafer after the main polishing.
In this embodiment, the bearing portion 10 includes a power portion 11 and a bearing platform 12, a bearing plane is formed on the upper surface of the bearing platform 12, the power portion 11 is connected with the bearing platform 12 to drive the bearing platform 12 to rotate around the axis thereof, the bearing plane is formed on the upper surface of the bearing platform 12 to enable the grinding portion to be well attached, the power portion 11 serves as a power source, and the power source can drive the bearing platform 12 to rotate. Specifically, the power unit 11 is a motor or the like.
In the present embodiment, as shown in fig. 3, a plurality of grooves 51 are disposed at intervals on the upper surface of the polishing portion, the polishing portion is a polishing pad 50 adapted to the size of the wafer for polishing the wafer, and the polishing material on the surface of the polishing pad 50 is polyurethane material, which is consistent with the polishing material on the surface of the polishing pad in the prior art, and is convenient for processing and use. The size of the polishing pad 50 is larger than the size of the wafer to be polished, specifically, the size of the polishing pad 50 is 5-20 mm larger than the size of the wafer to be polished, and the polishing pad 50 and the wafer are both circular, where the size of the polishing pad 50 is the diameter of the polishing pad 50, and the size of the wafer is the diameter of the wafer.
In this embodiment, the grooves 51 are concentric circles, the number of the grooves 51 is 10 to 20, so that the quality of the polishing process is ensured, the back of the polishing pad 50 has a sticky property, and the polishing pad can be attached to a carrier, so that the polishing pad 50 can be fixed firmly enough and can be replaced more conveniently, it can be understood that the size of the polishing pad 50 can be matched with the sizes of all wafers with diameters of 150mm, 200mm, 300mm, 450mm and the like, the polishing pads 50 with different sizes can be replaced according to different sizes of processed wafers, and the number of the grooves 51 on the surface can be changed according to different actual sizes of the wafers. For example, when the size of the polishing pad 50 is 210-220 mm, the polishing pad 50 is suitable for a wafer with a diameter of 200mm, and the polishing pad 50 is also suitable for wafers with diameters of 150mm and 300 mm; when the size of the polishing pad 50 is 155-160 mm, the polishing pad 50 with the size is suitable for a wafer with the diameter of 150 mm; when the size of the polishing pad 50 is 310-315 mm, the polishing pad 50 is suitable for a wafer with a diameter of 300 mm.
In this embodiment, the liquid output portion includes a polishing liquid output portion 20 and a cleaning liquid output portion 21, the polishing liquid output portion 20 is suitable for spraying polishing liquid onto the polishing portion, the cleaning liquid output portion 21 is suitable for spraying cleaning liquid onto the polishing portion to clean and post-polish the wafer, the polishing pad 50 is cleaned before pre-polishing, after pre-polishing and after water polishing, residues on the polishing pad 50 can be cleaned, the yield of the wafer is improved, and the problems that the residues are not cleaned completely, and the wafer with the residues is embedded into the surface of the wafer during main polishing to cause defects, scratches, pot holes and surface corrosion of the wafer in the prior art are effectively solved. It can be understood that the polishing liquid output by the polishing liquid output part 20 and the cleaning liquid output by the cleaning liquid output part 21 can be changed in liquid type and contained substances according to actual requirements. Specifically, the cleaning solution is deionized water.
Preferably, the polishing liquid output part 20 includes a polishing liquid nozzle and a polishing liquid delivery pipe, one end of the polishing liquid delivery pipe is connected to the polishing liquid nozzle, and the other end of the polishing liquid delivery pipe is connected to the polishing liquid tank, the polishing liquid tank contains polishing liquid, a polishing liquid delivery pump is disposed on the polishing liquid tank or the polishing liquid delivery pipe, the polishing liquid in the polishing liquid tank is delivered to the polishing liquid nozzle by the polishing liquid delivery pump, and then the polishing liquid is sprayed onto the polishing pad 50 by the polishing liquid nozzle.
Preferably, the cleaning liquid output portion 21 includes a cleaning liquid nozzle and a cleaning liquid delivery pipe, one end of the cleaning liquid delivery pipe is connected to the cleaning liquid nozzle and the other end is connected to the cleaning liquid tank, the cleaning liquid tank contains the cleaning liquid, a cleaning liquid delivery pump is provided on the cleaning liquid tank or the cleaning liquid delivery pipe, the cleaning liquid in the cleaning liquid tank is delivered to the cleaning liquid nozzle through the cleaning liquid delivery pump, and then the cleaning liquid is sprayed onto the polishing pad 50 through the cleaning liquid nozzle.
In this embodiment, a protective cover 30 is further disposed around the carrying portion 10, and the protective cover 30 is used for preventing splashing of liquid or particulate matters.
In this embodiment, the polishing liquid outlet 20 and the cleaning liquid outlet 21 are fixed to the protection mask 30 in a simple manner. Specifically, the polishing liquid output part 20 and the cleaning liquid output part 21 are oppositely disposed on both sides of the shield cap 30. It is understood that the polishing liquid output part 20 and the cleaning liquid output part 21 may be fixed on a fixed table of the chemical mechanical polishing apparatus.
Specifically, the protection cover 30 and the power portion 11 are both fixed on a fixed table. It is understood that the power portion 11 may be fixed to the bottom of the protection cover 30.
In this embodiment, the protective cover 30 surrounds the periphery and the bottom of the carrying platform 12, and a water outlet 31 is provided on the protective cover 30, and the water outlet 31 is connected with a water drain pipe. The protective cover 30 surrounds the periphery and bottom of the platform 12, so as to effectively prevent splashing of liquid during operation, and meanwhile, the grinding fluid by-products and other residues are collected in the bottom area of the protective cover 30 and discharged through the water outlet 31 and the water discharge pipe, so that the working environment is not polluted.
It should be noted that the size of the loading/unloading carrier table in this embodiment can be matched with all wafer sizes with diameters of 150mm, 200mm, 300mm, 450mm, etc., and the size of the carrier table varies according to the actual wafer size requirement.
In this embodiment, the loading and unloading plummer still includes a plurality of centering clamping jaws, and the centering clamping jaw sets up in the protection casing, and the centering clamping jaw carries out the centering to the wafer, realizes the location of wafer, improves positioning accuracy.
The present invention also provides a chemical mechanical polishing apparatus, comprising: the carrier and polishing head 40 are mounted and dismounted, and the polishing head 40 is disposed above the carrier.
In this embodiment, the chemical mechanical polishing apparatus further includes a fixed platen, a plurality of polishing platens, and the polishing platen and the loading/unloading carrier are disposed on the fixed platen. Specifically, the number of the polishing platforms is three, and the polishing platforms are respectively a first polishing platform, a second polishing platform and a third polishing platform, the number of the polishing heads 40 is four, and the four polishing heads are arranged in one-to-one correspondence with the three polishing platforms and one loading/unloading carrier table. The grinding of the wafer on the first grinding platform, the second grinding platform and the third grinding platform is main grinding.
In this embodiment, the chemical mechanical polishing apparatus has dimensions of 6 inches, 8 inches, 12 inches, and the like, and satisfies various process requirements.
As shown in fig. 4, the present invention further provides a chemical mechanical polishing method, which comprises the following steps: placing the wafer on a polishing portion of a load-lock table before and after main polishing of the wafer; the liquid output part of the loading and unloading bearing table sprays liquid onto the grinding part, and the wafer is pre-ground and/or post-ground through the grinding head; the polishing section is cleaned. The wafer can be pre-ground and/or post-ground and the grinding part can be cleaned on the loading and unloading bearing platform, the loading and unloading bearing platform integrates the function of sucking and unloading the wafer with the pre-grinding and/or post-grinding functions, the newly loaded wafer can be pre-ground, the wafer can directly enter main grinding after pre-grinding, relevant pre-grinding time is saved, main grinding time is shortened, meanwhile, the wafer is subjected to post-grinding after entering the loading and unloading bearing platform, the post-grinding can clean the surface grinding or chemical residues of the wafer, the surface defects of the wafer can be reduced through post-grinding after pre-grinding and main grinding, and the product yield is improved.
It will be appreciated that, as an alternative embodiment, the wafer may be placed on the polishing portion of the load lock just before or just after the main polishing, in which case only the wafer is pre-polished or post-polished.
In this embodiment, before the wafer is placed on the polishing portion of the loadlock stage, the chemical mechanical polishing method further includes: the liquid output part sprays the liquid onto the grinding part to clean the grinding part.
In this embodiment, in the step of spraying the liquid onto the polishing portion by the liquid output portion of the loading/unloading carrier and pre-polishing and/or post-polishing the wafer by the polishing head, the flow rate of the polishing liquid output by the liquid output portion is 50 to 80ml/min, the pre-polishing time is 5 to 8 seconds, the rotation speed of the polishing head is 45 to 50rpm/min, and the post-polishing time is 4 to 6 seconds.
In this embodiment, in the step of cleaning the polishing part, the flow rate of the cleaning liquid outputted from the liquid output part is 200 to 250ml/min, the cleaning time is 3 to 5 seconds, and the rotation speed of the carrier part 10 is 50 to 60 rpm/min.
It is understood that the main polishing is followed by the steps of post-polishing, post-cleaning, etc. and the pre-polishing, main polishing, water polishing, cleaning steps can be performed in the above-mentioned chemical mechanical polishing method.
In the above chemical mechanical polishing method, the main polishing, the post-water polishing after the main polishing, the post-cleaning, and the pre-polishing steps are processes for polishing the wafer.
As shown in fig. 5, the following describes the specific steps of polishing a wafer:
step S1: the wafer to be polished is transferred by the robot arm onto the surface of the polishing pad of the loadlock stage.
Step S2: centering the wafer by a centering clamping jaw of the loading and unloading bearing table, loading the wafer into a grinding head (with a set pressure), rotating the bearing table at a rotating speed of 50-60 rpm/min, spraying deionized water onto the grinding pad to clean the grinding pad, wherein the flow rate of the deionized water is 200-250 ml/min, and the time is 3-5 seconds.
Step S3: the polishing liquid nozzle sprays the polishing liquid to the bearing platform, the flow rate of the polishing liquid is 50-80 ml/min, the polishing head presses down to the upper part of the polishing pad to start pre-polishing, the rotation speed of the polishing head is 45-50 rpm/min, and the polishing time is 5-8 seconds.
Step S4: after the pre-polishing is completed, the polishing head sucks up the wafer and transfers the wafer onto the first polishing platform, and at this time, the loading/unloading carrier platform cleans the polishing pad with deionized water for 3-5 seconds.
Step S5: grinding a first wafer on a first grinding platform, wherein the main grinding time is 40-45 seconds (the main grinding time in the prior art is 50-55 seconds), and waiting for transferring to a second grinding platform after grinding; meanwhile, the wafer polished by the third polishing platform is transferred to the loading and unloading platform for water polishing, the polishing head bears the wafer and presses down to the loading and unloading platform for polishing for 4-6 seconds, and the polishing head unloads the wafer to the loading and unloading platform.
Step S6: then the ground wafer is transferred by a mechanical arm, and the next wafer to be ground is transferred to a loading and unloading bearing platform to carry out the same pre-grinding method and steps.
Step S7: after the main grinding, the wafer on the loading/unloading bearing table enters the first grinding platform. Meanwhile, the wafer on the first grinding platform enters the second grinding platform.
It should be noted that the wafer to be polished is transferred onto the surface of the polishing pad of the loadlock stage by the robot arm, and after steps S1 to S3 are completed, the first polishing platen performs the main polishing in step S5, and the pre-polishing is performed before the main polishing, so as to effectively save the main polishing time on the polishing platen.
From the above description, it can be seen that the above-described embodiments of the present invention achieve the following technical effects:
1. a grinding pad is pasted on the bearing platform of the bearing part, a protective cover is arranged around the bearing platform and prevents liquid from splashing to the nearby grinding platform, a grinding fluid output part and a cleaning fluid output part are arranged on two sides of the protective cover, the grinding fluid output part is used for spraying grinding fluid to the surface of the grinding pad, the cleaning fluid output part is used for spraying the grinding fluid to the surface of the grinding pad to clean the grinding pad, a motor of the bearing part is used for controlling the bearing platform to rotate, when the wafer enters the loading/unloading platform, the polishing head loads the wafer and presses down onto the polishing pad for pre-polishing, after the ground wafer enters the loading and unloading bearing platform, the water grinding is carried out, so that the loading and unloading bearing platform has the functions of sucking and unloading the wafer and can also realize the functions of pre-grinding, water grinding and cleaning, the functions of taking, unloading and circular sucking are unified with the functions of pre-grinding, water grinding and cleaning, so that the functions of loading and unloading bearing tables are more diversified; the water mill is used for cleaning the ground or chemical residues on the surface of the wafer, so that the surface defects of the wafer are reduced, and the product yield is improved.
2. The protective cover is provided with a water outlet which is used for discharging the grinding fluid by-products and other residues.
3. In the method for grinding the wafer, the wafer to be unloaded is subjected to water grinding on the loading and unloading bearing table and then unloaded within the grinding time of the first grinding platform, and the next non-ground wafer is subjected to pre-grinding, so that grinding can be directly carried out on the first grinding platform, the product yield is improved, the pre-grinding time originally contained in main grinding is saved, the related main grinding time is shortened, the overall grinding processing time is shortened, and the grinding processing efficiency is improved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A load carrying platform, comprising:
a bearing part (10) having a bearing plane;
the grinding part is arranged on the bearing part (10) and is used for contacting with the wafer;
the liquid output part is arranged on the outer side of the bearing part (10) and is suitable for spraying liquid onto the grinding part so as to pre-grind and/or post-grind the wafer and clean the grinding part.
2. A loading ledge as claimed in claim 1, characterized in that said load bearing part (10) comprises a power part (11) and a load bearing platform (12), the upper surface of said load bearing platform (12) forming said load bearing plane, said power part (11) being connected to said load bearing platform (12) for driving said load bearing platform (12) in rotation about its axis.
3. The carrier table according to claim 2, wherein the upper surface of the grinding part is provided with a plurality of spaced grooves (51).
4. The susceptor of claim 2, wherein the liquid output portion comprises a polishing liquid output portion (20) and a cleaning liquid output portion (21), the polishing liquid output portion (20) is adapted to spray polishing liquid onto the polishing portion, and the cleaning liquid output portion (21) is adapted to spray cleaning liquid onto the polishing portion to clean and post-polish the wafer.
5. Loading ramp according to claim 2, characterized in that a protective shield (30) is arranged around the carrier part (10), which protective shield (30) is intended to prevent splashing of liquid or particles.
6. Loading/unloading platform according to claim 5, characterized in that the protective hood (30) surrounds the circumference and the bottom of the load-bearing platform (12), the protective hood (30) being provided with a drain (31).
7. A chemical mechanical polishing apparatus, comprising: a carrier head (40) and a loading/unloading platform according to any one of claims 1 to 6.
8. A chemical mechanical polishing method, comprising:
placing the wafer on a polishing portion of a load-and-unload table before and/or after main polishing of the wafer;
the liquid output part of the loading and unloading bearing table sprays liquid onto the grinding part, and the wafer is pre-ground and/or post-ground through the grinding head;
and cleaning the grinding part.
9. The chemical mechanical polishing method according to claim 8, wherein the liquid output portion of the loading/unloading carrier sprays the liquid onto the polishing portion, and in the step of performing the pre-polishing and/or the post-polishing on the wafer by the polishing head, the flow rate of the polishing liquid output by the liquid output portion is 50 to 80ml/min, and/or the pre-polishing time is 5 to 8 seconds, and/or the rotation speed of the polishing head is 45 to 50rpm/min, and/or the post-polishing time is 4 to 6 seconds.
10. The chemical mechanical polishing method according to claim 9, wherein in the step of cleaning the polishing section, the flow rate of the cleaning liquid outputted from the liquid output section is 200 to 250ml/min, and/or the cleaning time is 3 to 5 seconds, and/or the rotation speed of the carrier section (10) of the loading/unloading carrier table is 50 to 60 rpm/min.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115648055A (en) * | 2022-11-08 | 2023-01-31 | 北京烁科精微电子装备有限公司 | Chemical mechanical polishing method |
| CN116252239A (en) * | 2023-02-08 | 2023-06-13 | 苏州斯尔特微电子有限公司 | A High Precision Wafer Chemical Mechanical Polishing Process |
| CN116872076A (en) * | 2023-08-16 | 2023-10-13 | 东科半导体(安徽)股份有限公司 | Gallium nitride multi-substrate grinding equipment and method |
| CN118848714A (en) * | 2024-09-27 | 2024-10-29 | 浙江丽水中欣晶圆半导体科技有限公司 | Epitaxial wafer back side flatness processing device and processing method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990009659A (en) * | 1997-07-10 | 1999-02-05 | 윤종용 | Wafer polishing apparatus with a measuring device and polishing method |
| TW200713440A (en) * | 2005-09-26 | 2007-04-01 | United Microelectronics Corp | Chemical mechanical polishing device and polishing pad thereof and method for planarization |
| TW201338919A (en) * | 2011-12-28 | 2013-10-01 | Ebara Corp | Cup member for preventing dripping liquid from splashing, substrate handling device having the same and substrate polishing device |
| KR20140143501A (en) * | 2013-06-07 | 2014-12-17 | 주식회사 케이씨텍 | Chemical mechanical polishing system and method thereof |
| CN105619239A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Scratching-preventing chemical mechanical grinding device and chemical mechanical grinding method thereof |
| CN108115553A (en) * | 2016-11-29 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical polisher and cmp method |
| CN112405331A (en) * | 2019-08-22 | 2021-02-26 | 长鑫存储技术有限公司 | Wafer grinding device |
| CN112706071A (en) * | 2019-10-24 | 2021-04-27 | 芯恩（青岛）集成电路有限公司 | Grinding equipment and grinding method |
| CN114378714A (en) * | 2020-10-19 | 2022-04-22 | 中国科学院微电子研究所 | Grinding disc and polishing equipment |
-
2022
- 2022-05-20 CN CN202210555700.1A patent/CN114833716B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990009659A (en) * | 1997-07-10 | 1999-02-05 | 윤종용 | Wafer polishing apparatus with a measuring device and polishing method |
| TW200713440A (en) * | 2005-09-26 | 2007-04-01 | United Microelectronics Corp | Chemical mechanical polishing device and polishing pad thereof and method for planarization |
| TW201338919A (en) * | 2011-12-28 | 2013-10-01 | Ebara Corp | Cup member for preventing dripping liquid from splashing, substrate handling device having the same and substrate polishing device |
| KR20140143501A (en) * | 2013-06-07 | 2014-12-17 | 주식회사 케이씨텍 | Chemical mechanical polishing system and method thereof |
| CN105619239A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Scratching-preventing chemical mechanical grinding device and chemical mechanical grinding method thereof |
| CN108115553A (en) * | 2016-11-29 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical polisher and cmp method |
| CN112405331A (en) * | 2019-08-22 | 2021-02-26 | 长鑫存储技术有限公司 | Wafer grinding device |
| CN112706071A (en) * | 2019-10-24 | 2021-04-27 | 芯恩（青岛）集成电路有限公司 | Grinding equipment and grinding method |
| CN114378714A (en) * | 2020-10-19 | 2022-04-22 | 中国科学院微电子研究所 | Grinding disc and polishing equipment |
Non-Patent Citations (2)
| Title |
|---|
| 王雷;: "金属钨化学机械研磨清洗缺陷研究及解决方法", 集成电路应用, no. 08 * |
| 花宁等: "石英玻璃晶圆的加工工艺", 红外与激光工程, vol. 45, no. 2 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115648055A (en) * | 2022-11-08 | 2023-01-31 | 北京烁科精微电子装备有限公司 | Chemical mechanical polishing method |
| CN116252239A (en) * | 2023-02-08 | 2023-06-13 | 苏州斯尔特微电子有限公司 | A High Precision Wafer Chemical Mechanical Polishing Process |
| CN116872076A (en) * | 2023-08-16 | 2023-10-13 | 东科半导体(安徽)股份有限公司 | Gallium nitride multi-substrate grinding equipment and method |
| CN118848714A (en) * | 2024-09-27 | 2024-10-29 | 浙江丽水中欣晶圆半导体科技有限公司 | Epitaxial wafer back side flatness processing device and processing method |
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