CN114794566A - A kind of liquid-conducting glass substrate and preparation method of heating element - Google Patents
A kind of liquid-conducting glass substrate and preparation method of heating element Download PDFInfo
- Publication number
- CN114794566A CN114794566A CN202110757477.4A CN202110757477A CN114794566A CN 114794566 A CN114794566 A CN 114794566A CN 202110757477 A CN202110757477 A CN 202110757477A CN 114794566 A CN114794566 A CN 114794566A
- Authority
- CN
- China
- Prior art keywords
- liquid
- substrate
- heating
- micropores
- heating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 415
- 239000000758 substrate Substances 0.000 title claims abstract description 188
- 239000011521 glass Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000011159 matrix material Substances 0.000 claims abstract description 122
- 238000000034 method Methods 0.000 claims abstract description 54
- 230000006698 induction Effects 0.000 claims abstract description 38
- 238000005260 corrosion Methods 0.000 claims abstract description 33
- 230000007797 corrosion Effects 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000008263 liquid aerosol Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 77
- 230000001681 protective effect Effects 0.000 claims description 72
- 238000005530 etching Methods 0.000 claims description 52
- 239000011148 porous material Substances 0.000 claims description 48
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- 229910045601 alloy Inorganic materials 0.000 claims description 31
- 239000000956 alloy Substances 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010935 stainless steel Substances 0.000 claims description 23
- 229910001220 stainless steel Inorganic materials 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 19
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 claims description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- -1 iron-chromium-aluminum Chemical compound 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 239000006018 Li-aluminosilicate Substances 0.000 claims description 5
- 239000005388 borosilicate glass Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 238000000889 atomisation Methods 0.000 abstract description 75
- 239000007788 liquid Substances 0.000 abstract description 68
- 230000000694 effects Effects 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000010923 batch production Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 330
- 229910052751 metal Inorganic materials 0.000 description 40
- 239000002184 metal Substances 0.000 description 40
- 239000000919 ceramic Substances 0.000 description 38
- 239000000443 aerosol Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 32
- 229920000742 Cotton Polymers 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 14
- 238000003860 storage Methods 0.000 description 13
- 230000007423 decrease Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 229910001182 Mo alloy Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 239000000306 component Substances 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000005234 chemical deposition Methods 0.000 description 4
- 239000000788 chromium alloy Substances 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000000796 flavoring agent Substances 0.000 description 4
- 235000019634 flavors Nutrition 0.000 description 4
- 239000003205 fragrance Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005382 thermal cycling Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- OGSYQYXYGXIQFH-UHFFFAOYSA-N chromium molybdenum nickel Chemical compound [Cr].[Ni].[Mo] OGSYQYXYGXIQFH-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910001119 inconels 625 Inorganic materials 0.000 description 3
- 229910000816 inconels 718 Inorganic materials 0.000 description 3
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000010963 304 stainless steel Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- SNICXCGAKADSCV-JTQLQIEISA-N (-)-Nicotine Chemical compound CN1CCC[C@H]1C1=CC=CN=C1 SNICXCGAKADSCV-JTQLQIEISA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 235000006679 Mentha X verticillata Nutrition 0.000 description 1
- 235000002899 Mentha suaveolens Nutrition 0.000 description 1
- 235000001636 Mentha x rotundifolia Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000012387 aerosolization Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 239000008368 mint flavor Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002663 nebulization Methods 0.000 description 1
- 229960002715 nicotine Drugs 0.000 description 1
- SNICXCGAKADSCV-UHFFFAOYSA-N nicotine Natural products CN1CCCC1C1=CC=CN=C1 SNICXCGAKADSCV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
- A24F40/46—Shape or structure of electric heating means
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
- A24F40/48—Fluid transfer means, e.g. pumps
- A24F40/485—Valves; Apertures
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/70—Manufacture
Landscapes
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
Description
技术领域technical field
本发明涉及雾化器技术领域,尤其涉及一种导液玻璃基体以及发热体制备的方法。The invention relates to the technical field of atomizers, in particular to a liquid-conducting glass substrate and a method for preparing a heating element.
背景技术Background technique
典型的电子雾化装置由发热体、电池和控制电路等部分组成,发热体作为电子雾化装置的核心元件,其特性决定了电子雾化装置的雾化效果和使用体验。A typical electronic atomization device consists of a heating element, a battery and a control circuit. The heating element is the core component of the electronic atomization device, and its characteristics determine the atomization effect and use experience of the electronic atomization device.
现有的发热体主要是棉芯发热体和陶瓷发热体。棉芯发热体大多为弹簧状的金属发热丝缠绕棉绳或纤维绳的结构;待雾化的液态气溶胶生成基质被棉绳两端吸取,然后传输至中心金属发热丝处加热雾化。陶瓷发热体大多为在多孔陶瓷体表面形成发热膜,多孔陶瓷体起到导液、储液的作用。Existing heating elements are mainly cotton core heating elements and ceramic heating elements. The cotton core heating element is mostly a structure in which a spring-like metal heating wire is wound around a cotton rope or fiber rope; the liquid aerosol to be atomized is absorbed by the two ends of the cotton rope, and then transferred to the central metal heating wire for heating and atomization. Most of the ceramic heating elements form a heating film on the surface of the porous ceramic body, and the porous ceramic body plays the role of conducting liquid and storing liquid.
随着技术的进步,用户对电子雾化装置的雾化效果的要求越来越高,为了满足用户的需求,需要提供一种具有更好雾化效果的发热体。With the advancement of technology, users have higher and higher requirements for the atomization effect of electronic atomization devices. In order to meet the needs of users, it is necessary to provide a heating element with better atomization effect.
发明内容SUMMARY OF THE INVENTION
鉴于上述问题,本申请提供一种发热体的制造方法,以解决现有技术中如何满足用户对雾化效果的需求。In view of the above problems, the present application provides a method for manufacturing a heating body, so as to solve how to meet the user's demand for atomization effect in the prior art.
为解决上述技术问题,本申请提供的技术方案为:提供一种发热体的制造方法,包括:对待加工基体进行第一次激光诱导和腐蚀,形成第一微孔的预制孔,预制孔具有预制孔径;对待加工基体进行第二次激光诱导和腐蚀,形成第二微孔,第二微孔具有第二孔径,其中,对待加工基体进行第二次腐蚀的过程使得预制孔径扩大为第一孔径,进一步的,预制孔转变为第一微孔,从而得到具有不同孔径的导液微孔的导液玻璃基体。In order to solve the above-mentioned technical problems, the technical solution provided by the present application is to provide a method for manufacturing a heating body, which includes: performing a first laser induction and corrosion on a substrate to be processed to form a prefabricated hole of the first microhole, and the prefabricated hole has a prefabricated hole. Aperture; the substrate to be processed is subjected to the second laser induction and corrosion to form second micropores, and the second micropores have a second aperture, wherein the process of performing the second etching of the substrate to be processed makes the prefabricated aperture expand to the first aperture, Further, the prefabricated pores are transformed into first micropores, thereby obtaining a liquid-conducting glass substrate having liquid-conducting micropores with different pore diameters.
其中,待加工基体包括第一表面以及与第一表面相对且平行的第二表面,所述第一微孔和第二微孔为贯穿且垂直于第一表面和第二表面的直通孔。Wherein, the substrate to be processed includes a first surface and a second surface opposite and parallel to the first surface, and the first microholes and the second microholes are through holes penetrating and perpendicular to the first surface and the second surface.
其中,对待加工基体进行第一次激光诱导和腐蚀,形成第一微孔的预制孔的步骤包括:对待加工基体按照第一孔径的微孔的分布进行激光诱导;对进行第一次激光诱导的基体进行第一次腐蚀,腐蚀时间为第一孔径所需总腐蚀时间(N)减去第二孔径所需腐蚀时间(M);The step of performing the first laser induction and etching on the substrate to be processed to form the prefabricated holes of the first micropores includes: performing laser induction on the substrate to be processed according to the distribution of the micropores of the first aperture; The substrate is etched for the first time, and the etching time is the total etching time (N) required for the first aperture minus the etching time (M) required for the second aperture;
对待加工基体进行第二次激光诱导和腐蚀,形成第二微孔的步骤包括:对待加工基体按照第二孔径的微孔的分布进行激光诱导,对进行第二次激光诱导的基体进行时间为第二孔径所需腐蚀时间(M)的第二次腐蚀。The second laser induction and corrosion are performed on the substrate to be processed, and the step of forming the second micropore includes: performing laser induction on the substrate to be processed according to the distribution of the micropores of the second aperture, and performing the second laser induction on the substrate for the first time. The second etching for the etching time (M) required for two apertures.
其中,对待加工基体进行第一次激光诱导和腐蚀,形成第一微孔的预制孔的步骤包括:形成包括多个具有预制孔径的预制孔的预制孔阵列;Wherein, the first laser induction and etching are performed on the substrate to be processed, and the step of forming the prefabricated holes of the first micropores includes: forming a prefabricated hole array including a plurality of prefabricated holes with prefabricated apertures;
对待加工基体进行第二次激光诱导和腐蚀,形成第二微孔的步骤包括:形成包括多个具有第二孔径的第二微孔的第二微孔阵列和多个具有第一孔径的第一微孔的第一微孔阵列。Carrying out the second laser induction and etching on the substrate to be processed, and the step of forming the second microholes includes: forming a second microhole array including a plurality of second microholes with a second aperture and a plurality of first apertures with a first aperture A first microwell array of microwells.
其中,导液玻璃基体的厚度与导液微孔的孔径的比例为20:1-3:1。The ratio of the thickness of the liquid-conducting glass substrate to the diameter of the liquid-conducting micropores is 20:1-3:1.
其中,导液玻璃基体的厚度与导液微孔的孔径的比例为15:1-5:1。The ratio of the thickness of the liquid-conducting glass substrate to the diameter of the liquid-conducting micropores is 15:1-5:1.
其中,相邻两个导液微孔之间的孔中心距与导液微孔的孔径的比例为3:1-1.5:1。Wherein, the ratio of the hole center distance between two adjacent liquid-conducting micro-holes to the diameter of the liquid-conducting micro-holes is 3:1-1.5:1.
其中,待加工基体为玻璃。Wherein, the substrate to be processed is glass.
其中,待加工基体为玻璃,玻璃为硼硅玻璃、石英玻璃以及光敏铝硅酸锂玻璃中的一种或多种。The substrate to be processed is glass, and the glass is one or more of borosilicate glass, quartz glass and photosensitive lithium aluminosilicate glass.
为解决上述技术问题,本申请提供的第二个技术方案是:提供一种发热体的制备方法,制备方法包括:制备导液玻璃基体,导液玻璃基体的制备方法为上述任一项的制备方法;在导液玻璃基体的第一表面形成发热膜。In order to solve the above technical problems, the second technical solution provided by the present application is to provide a method for preparing a heating element, the preparation method comprising: preparing a liquid-conducting glass substrate, and the preparation method of the liquid-conducting glass substrate is the preparation of any of the above method; forming a heating film on the first surface of a liquid-conducting glass substrate.
其中,在导液玻璃基体的第一表面形成发热膜的步骤包括:通过物理气相沉积或化学气相沉积形成电阻为0.5欧姆-2欧姆,厚度为200纳米-5微米的发热膜;发热膜的材料为铝、铜、银、金或其合金。Wherein, the step of forming a heating film on the first surface of the liquid-conducting glass substrate includes: forming a heating film with a resistance of 0.5 ohm-2 ohm and a thickness of 200 nanometers to 5 microns by physical vapor deposition or chemical vapor deposition; For aluminum, copper, silver, gold or alloys thereof.
其中,在导液玻璃基体的第一表面形成发热膜的步骤之后包括:通过物理气相沉积或化学气相沉积在发热膜远离导液玻璃基体的表面形成厚度为100纳米-1000纳米的保护膜;保护膜的材料为不锈钢、镍铬铁合金、镍基耐腐蚀合金中的一种或任意组合。Wherein, after the step of forming a heating film on the first surface of the liquid-conducting glass substrate, it includes: forming a protective film with a thickness of 100 nanometers to 1000 nanometers on the surface of the heating film far from the liquid-conducting glass substrate by physical vapor deposition or chemical vapor deposition; The material of the membrane is one or any combination of stainless steel, nickel-chromium-iron alloy, and nickel-based corrosion-resistant alloy.
其中,在导液玻璃基体的第一表面形成发热膜的步骤包括:通过印刷或化学气相沉积形成电阻为0.5欧姆-2欧姆,厚度为5微米-100微米的发热膜;发热膜的材料为镍铬合金、镍铬铁合金、铁铬铝合金、镍、铂以及钛中的一种。Wherein, the step of forming a heating film on the first surface of the liquid-conducting glass substrate includes: forming a heating film with a resistance of 0.5 ohm-2 ohm and a thickness of 5 microns-100 microns by printing or chemical vapor deposition; the material of the heating film is nickel One of chromium alloy, nickel-chromium-iron alloy, iron-chromium-aluminum alloy, nickel, platinum and titanium.
其中,在导液玻璃基体的第一表面形成发热膜的步骤之后包括:通过印刷或化学气相沉积在发热膜远离导液玻璃基体的表面形成厚度为5微米-20微米的保护膜;保护膜的材料为不锈钢。Wherein, after the step of forming a heating film on the first surface of the liquid-conducting glass substrate, it includes: forming a protective film with a thickness of 5 microns to 20 microns on the surface of the heating film away from the liquid-conducting glass substrate by printing or chemical vapor deposition; Material is stainless steel.
本申请的有益效果:区别于现有技术,本申请中的发热体包括导液玻璃基体和发热膜;具体制备方法包括:对待加工基体进行第一次激光诱导和腐蚀,形成第一微孔的预制孔,预制孔具有预制孔径;对待加工基体进行第二次激光诱导和腐蚀,形成第二微孔,第二微孔具有第二孔径,其中,对待加工基体进行第二次腐蚀的过程使得预制孔径扩大为第一孔径,预制孔转变为第一微孔,从而得到具有不同孔径的导液微孔的导液玻璃基体;在导液玻璃基体的第一表面形成发热膜。通过上述工艺,使得发热体在批量生产中,孔隙率可以精确控制,波动范围小,加热功率可以精准匹配,进而实现较好的雾化效果,适合大批量标准化生产。另外,由于对待加工基体进行第二次腐蚀的过程使得第一微孔由预制孔径扩大为第一孔径,相较于分别制备具有第二孔径的第二微孔和具有第一孔径的第一微孔,该方法工艺简单,成本较低。Beneficial effects of the present application: Different from the prior art, the heating element in the present application includes a liquid-conducting glass substrate and a heating film; the specific preparation method includes: performing the first laser induction and corrosion on the substrate to be processed to form the first micropores. Prefabricated holes, the prefabricated holes have prefabricated apertures; the substrate to be processed is subjected to a second laser induction and etching to form second micropores, and the second micropores have a second aperture, wherein the second etching process of the substrate to be processed makes the prefabricated The pore size is expanded to the first pore size, and the prefabricated holes are transformed into first micropores, thereby obtaining a liquid-conducting glass substrate with liquid-conducting micropores of different pore sizes; a heating film is formed on the first surface of the liquid-conducting glass substrate. Through the above process, in mass production, the porosity of the heating element can be precisely controlled, the fluctuation range is small, and the heating power can be accurately matched, thereby achieving a better atomization effect, which is suitable for mass standardized production. In addition, due to the second etching process of the substrate to be processed, the first micropores are enlarged from prefabricated apertures to first apertures, compared with preparing second micropores with second apertures and first micropores with first apertures The method is simple in process and low in cost.
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.
图1是本申请提供的电子雾化装置的结构示意图;Fig. 1 is the structural representation of the electronic atomization device provided by the application;
图2是本申请提供的雾化组件的结构示意图;Fig. 2 is the structural representation of the atomization assembly provided by the application;
图3是本申请提供的发热体的结构示意图;Fig. 3 is the structural representation of the heating element provided by this application;
图4是图3提供的发热体中致密基体的结构示意图;Fig. 4 is the structural representation of the dense matrix in the heating element provided by Fig. 3;
图5a是图3提供的致密基体中微孔第一实施方式的结构示意图;5a is a schematic structural diagram of the first embodiment of the micropores in the dense matrix provided in FIG. 3;
图5b是图3提供的致密基体中微孔第二实施方式的结构示意图;5b is a schematic structural diagram of the second embodiment of the micropores in the dense matrix provided in FIG. 3;
图5c是图3提供的致密基体中微孔第三实施方式的结构示意图;5c is a schematic structural diagram of a third embodiment of micropores in the dense matrix provided in FIG. 3;
图5d是图3提供的致密基体中微孔第四实施方式的结构示意图;5d is a schematic structural diagram of the fourth embodiment of the micropores in the dense matrix provided in FIG. 3;
图6a是图3提供的致密基体第一实施方式的俯视结构示意图;6a is a schematic top view of the structure of the first embodiment of the dense substrate provided in FIG. 3;
图6b是图3提供的致密基体第二实施方式的俯视结构示意图;Fig. 6b is a top-view structural schematic diagram of the second embodiment of the dense matrix provided in Fig. 3;
图7是图6b提供的致密基体的制作工艺流程示意图;7 is a schematic diagram of a manufacturing process flow of the dense matrix provided in FIG. 6b;
图8a为图7中步骤S1的俯视结构示意图;Fig. 8a is a top-view structural schematic diagram of step S1 in Fig. 7;
图8b为图7中步骤S1的侧视结构示意图;Fig. 8b is a side view structural schematic diagram of step S1 in Fig. 7;
图8c为图7中步骤S2的俯视结构示意图;Fig. 8c is a top-view structural schematic diagram of step S2 in Fig. 7;
图8d为图7中步骤S2的侧视结构示意图;FIG. 8d is a schematic side view of the structure of step S2 in FIG. 7;
图9a是本申请提供的发热体中发热膜为厚膜时的俯视结构示意图;9a is a schematic top view of the structure of the heating element provided by the present application when the heating film is a thick film;
图9b是图3提供的发热体的俯视结构示意图;Fig. 9b is the top-view structure schematic diagram of the heating element provided by Fig. 3;
图10是本申请提供的发热体包括保护膜且发热膜为薄膜的结构示意图;10 is a schematic structural diagram of the heating body provided by the application including a protective film and the heating film being a thin film;
图11是本申请提供的发热体包括保护膜且发热膜为厚膜的俯视结构示意图;11 is a schematic top-view structural diagram of the heating element provided by the present application including a protective film and the heating film is a thick film;
图12是本申请提供的雾化组件包括疏松基体的结构示意图;12 is a schematic structural diagram of the atomization assembly provided by the present application including a loose matrix;
图13是本申请提供的发热膜一实施方式的SEM图;13 is a SEM image of an embodiment of the heating film provided by the present application;
图14是本申请的发热体与传统多孔陶瓷发热体的雾化气溶胶量对比图;14 is a comparison diagram of the amount of atomized aerosol of the heating element of the present application and the conventional porous ceramic heating element;
图15是本申请提供的发热体中发热膜失效图;Figure 15 is a failure diagram of the heating film in the heating element provided by the application;
图16是图15提供的发热膜失效图的SEM图和EDS图;Figure 16 is a SEM image and an EDS image of the heating film failure map provided in Figure 15;
图17是本申请提供的发热体中发热膜寿命与保护膜厚度的关系图;Figure 17 is a graph showing the relationship between the lifetime of the heating film and the thickness of the protective film in the heating element provided by the application;
图18是本申请提供的发热体湿烧实验示意图;18 is a schematic diagram of a heating element wet burning experiment provided by the application;
图19是本申请提供的发热体的致密基体厚度/微孔孔径与雾化量之间的关系图;FIG. 19 is a graph showing the relationship between the thickness of the dense matrix/micropore diameter and the amount of atomization of the heating element provided by the present application;
图20是传统多孔陶瓷发热体的雾化温度与加热功率的关系图;Figure 20 is a graph showing the relationship between the atomization temperature and the heating power of the conventional porous ceramic heating element;
图21是本申请提供的发热体的雾化温度与加热功率的关系图;Figure 21 is a graph showing the relationship between the atomization temperature and the heating power of the heating element provided by the application;
图22是本申请提供的发热体的雾化温度与抽吸时间之间的关系图。FIG. 22 is a graph showing the relationship between the atomization temperature of the heating element provided by the present application and the suction time.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
本申请中的术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。此外,术语“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元,而是可选地还包括没有列出的步骤或单元,或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first", "second" and "third" in this application are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first", "second", "third" may expressly or implicitly include at least one of that feature. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless otherwise expressly and specifically defined. All directional indications (such as up, down, left, right, front, rear...) in the embodiments of the present application are only used to explain the relative positional relationship between components under a certain posture (as shown in the accompanying drawings). , motion situation, etc., if the specific posture changes, the directional indication also changes accordingly. Furthermore, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes unlisted steps or units, or optionally also includes For other steps or units inherent to these processes, methods, products or devices.
在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。Reference herein to an "embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor a separate or alternative embodiment that is mutually exclusive of other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
请参阅图1,图1是本申请提供的电子雾化装置的结构示意图。Please refer to FIG. 1 , which is a schematic structural diagram of an electronic atomization device provided by the present application.
电子雾化装置可用于液态基质的雾化。电子雾化装置包括相互连接的雾化组件1和电源组件2。雾化组件1用于存储液态气溶胶生成基质并雾化气溶胶生成基质以形成可供用户吸食的气溶胶,液态气溶胶生成基质可以是药液、植物草叶类液体等液态基质;雾化组件1具体可用于不同的领域,比如,医疗、电子气溶胶化等。电源组件2包括电池(图未示)、气流传感器(图未示)以及控制器(图未示)等;电池用于为雾化组件1供电,以使得雾化组件1能够雾化待雾化基质形成气溶胶;气流传感器用于检测电子雾化装置中气流变化,控制器根据气流传感器检测到的气流变化启动电子雾化装置。雾化组件1与电源组件2可以是一体设置,也可以是可拆卸连接,根据具体需要进行设计。Electronic atomization devices can be used for atomization of liquid substrates. The electronic atomization device includes an
请参阅图2,图2是本申请提供的雾化组件的结构示意图。Please refer to FIG. 2 , which is a schematic structural diagram of the atomizing assembly provided by the present application.
雾化组件1包括储液腔10、发热体11、吸嘴12、出雾通道13。储液腔10用于存储液态气溶胶生成基质,发热体11用于雾化储液腔10中的气溶胶生成基质。在本实施方式中,储液腔10与发热体11之间形成有下液通道14,以将储液腔10中的液体导引至发热体11;在另一实施方式中,发热体11也可以直接暴露于储液腔10以雾化储液腔10中的液体。发热体11雾化好的气溶胶通道出雾通道13到达吸嘴12被用户吸食。其中,发热体11与电源组件2电连接,以雾化气溶胶生成基质。The
目前,发热体11常用的有棉芯发热体和多孔陶瓷发热体。棉芯发热体的结构大多为弹簧状的金属发热丝缠绕棉绳或纤维绳;弹簧状的金属发热丝在棉芯发热体结构中需要起到结构支撑的作用,为了达到足够的强度,金属发热丝的直径通常为数百微米;待雾化的液态气溶胶生成基质被棉绳或纤维绳两端吸取,然后传输至中心金属发热丝处被加热雾化。多孔陶瓷发热体的一种结构为弹簧状的金属发热丝内嵌于圆筒状的多孔陶瓷体;多孔陶瓷体起到导液、储液的作用。多孔陶瓷发热体的另一种结构为在多孔陶瓷体上印刷金属厚膜浆料,再高温烧结后在多孔陶瓷体上形成金属导线;由于多孔陶瓷表面的孔径分布在1微米-100微米不等,导致多孔陶瓷表面的粗糙度较大,为了形成连续稳定的金属膜导线,金属膜导线的厚度通常超过100微米。At present, the commonly used
多孔陶瓷发热体由于温度稳定性较高,相对更安全,因此越来越受到市场的欢迎。多孔陶瓷发热体常用结构为在多孔陶瓷表面印刷金属厚膜导线。现有的电子雾化装置的金属厚膜导线的材料通常选择高电阻率的镍铬合金、镍铬铁合金、铁铬铝合金等材料。在金属厚膜导线反复加热液态气溶胶生成基质时,气溶胶中常被检测到重金属离子,如镍和铬超标,重金属离子的积聚会对人体器官如肺、肝、肾等的损伤,这会给使用者带来了巨大的安全隐患。Porous ceramic heating elements are more and more popular in the market due to their high temperature stability and relative safety. The common structure of the porous ceramic heating element is to print metal thick film wires on the surface of the porous ceramic. The materials of the metal thick-film wires of the existing electronic atomization device are usually selected from nickel-chromium alloys, nickel-chromium-iron alloys, and iron-chromium-aluminum alloys with high resistivity. When the metal thick film wire repeatedly heats the liquid aerosol to form the matrix, heavy metal ions such as nickel and chromium are often detected in the aerosol, and the accumulation of heavy metal ions will damage human organs such as lung, liver, kidney, etc. Users bring huge security risks.
另外,对于棉芯发热体和多孔陶瓷发热体的上述结构,通电时,金属发热丝或金属厚膜导线被加热,热量传导至棉绳或多孔陶瓷体内的液体,使液体被加热雾化。由于金属发热丝或金属厚膜导线为致密实体,通电时,金属发热丝或金属厚膜导线需要被优先加热,只有金属发热丝或金属厚膜导线附近的液体被金属发热丝或金属厚膜导线直接加热,远处的液体需要被棉绳或多孔陶瓷体所传导的热量加热雾化。电池提供的能量需要加热金属发热丝或金属厚膜导线,还需要加热整个液体传输介质,这种加热方式存在雾化效率低的缺点。In addition, for the above-mentioned structure of the cotton core heating element and the porous ceramic heating element, the metal heating wire or the metal thick film wire is heated when energized, and the heat is conducted to the liquid in the cotton rope or the porous ceramic body, so that the liquid is heated and atomized. Since the metal heating wire or metal thick-film wire is a dense entity, the metal heating wire or metal thick-film wire needs to be preferentially heated when electrified, and only the liquid near the metal heating wire or metal thick-film wire is heated by the metal heating wire or metal thick-film wire. Direct heating, the liquid in the distance needs to be heated and atomized by the heat conducted by the cotton rope or the porous ceramic body. The energy provided by the battery needs to heat the metal heating wire or the metal thick film wire, and also needs to heat the entire liquid transmission medium. This heating method has the disadvantage of low atomization efficiency.
现有的电子雾化装置的功率不超过10瓦,功率通常为6瓦-8.5瓦,现有的电子雾化装置采用的电池的电压范围为2.5伏-4.4伏。对于封闭式电子雾化装置(无需用户自行注入待雾化基质的电子雾化装置),采用的电池的电压范围为3伏-4.4伏。The power of the existing electronic atomization device does not exceed 10 watts, and the power is usually 6 watts-8.5 watts, and the voltage range of the battery used by the existing electronic atomizing device is 2.5 volts-4.4 volts. For closed electronic atomization devices (electronic atomization devices that do not require the user to inject the substrate to be atomized), the voltage range of the battery used is 3V-4.4V.
本申请发明人研究发现,采用玻璃等致密材料制得的导液基体,由于导液基体的表面光滑,因此可以采用物理气相沉积或化学气相沉积的方式,在导液基体的表面沉积连续稳定的金属发热膜,金属发热膜的厚度在几微米或纳米级厚度范围内。这样不仅可以使得发热体11小型化,而且可以节省发热膜材料。The inventors of the present application have found that the liquid-conducting substrate made of dense materials such as glass has a smooth surface, so physical vapor deposition or chemical vapor deposition can be used to deposit continuous and stable liquid-conducting substrates on the surface of the liquid-conducting substrate. Metal heating film, the thickness of the metal heating film is in the range of a few micrometers or nanometers. In this way, not only the
然而,本申请发明人研究发现,相对现有的棉芯发热体和多孔陶瓷发热体,采用玻璃等致密材料制得的导液基体供液通道更短,供液速度更快,但漏液风险液更大。因此,采用玻璃等致密材料制得的导液基体制备发热体11,往往需要对雾化组件1进行更高的密封性设计,这增加了雾化组件1的制备难度和成本,而且,即使在雾化组件1中设计储液槽等结构收集漏液,防止漏液流出雾化组件1,但气溶胶生成基质的利用率比较低。However, the inventors of the present application have found that, compared with the existing cotton core heating element and porous ceramic heating element, the liquid supply channel of the liquid-conducting matrix made of dense materials such as glass is shorter and the liquid supply speed is faster, but the risk of liquid leakage Liquid is bigger. Therefore, using a liquid-conducting substrate made of a dense material such as glass to prepare the
进一步,本申请发明人研究发现,由于现有的镍铬合金、镍铬铁合金、铁铬铝合金等材料电阻率较高,在同样的形状下,将发热膜的厚度减小至几微米或以下,发热膜的电阻将会明显增大。例如,将发热膜的厚度由100微米减小至10微米,电阻增大为原来的10倍;如果要保持发热体11的功率不变,就需要将电池的电压增大,而这就会导致电子雾化装置的成本上升;而且,这样的发热体11与目前现有的电子雾化装置的电源组件2中电池的电压无法匹配,导致消费者使用不便。Further, the inventors of the present application have found that due to the high resistivity of existing nickel-chromium alloys, nickel-chromium-iron alloys, iron-chromium-aluminum alloys and other materials, under the same shape, the thickness of the heating film is reduced to a few microns or less. , the resistance of the heating film will increase significantly. For example, if the thickness of the heating film is reduced from 100 microns to 10 microns, the resistance is increased by 10 times; if the power of the
基于现有的发热体存在的问题,本申请提供一种发热体11以解决上述问题,下面对本申请的发热体11的结构进行详细介绍。Based on the problems of the existing heating elements, the present application provides a
请参阅图3和图4,图3是本申请提供的发热体的结构示意图,图4是图3提供的发热体中致密基体的结构示意图。Please refer to FIG. 3 and FIG. 4 , FIG. 3 is a schematic structural diagram of a heating body provided by the present application, and FIG. 4 is a structural schematic diagram of a dense matrix in the heating body provided in FIG. 3 .
发热体11包括致密基体111和发热膜112。致密基体111包括第一表面以及与第一表面1111相对的第二表面1112;致密基体111上设置有多个微孔113,微孔113为通孔,微孔113用于将气溶胶生成基质导引至第一表面1111。微孔113具有毛细作用。发热膜112形成于第一表面1111上;发热膜112在常温下的电阻为0.5欧姆-2欧姆,其中,常温为25℃。可以理解的是,致密基体111起结构支撑作用,发热体11中的发热膜112与电源组件2电连接。在电子雾化装置的功率为6瓦-8.5瓦,电池的电压范围为2.5伏-4.4伏时,为了达到电池的工作电阻,发热体11的发热膜112在常温下的电阻范围为0.5欧姆-2欧姆。The
本申请通过在致密基体111上设置多个具有毛细作用力的微孔113,使得发热体11的孔隙率的大小可精确控制,提升产品的一致性。也就是说,在批量生产中,发热体11中致密基体111的孔隙率基本一致,形成于致密基体111上的发热膜112的厚度均匀,使得同一批出厂的电子雾化装置雾化效果一致。In the present application, by arranging a plurality of
储液腔10中的气溶胶生成基质经过下液通道14到达发热体11的致密基体111,利用致密基体111上微孔113的毛细作用力将气溶胶生成基质导引至致密基体111的第一表面1111,使气溶胶生成基质被发热膜112雾化;也就是说,微孔113通过下液通道14与储液腔10连通。其中,致密基体111的材料可以为玻璃或致密陶瓷;致密基体111为玻璃时,可以普通玻璃、石英玻璃、硼硅玻璃或光敏铝硅酸锂玻璃中的一种。The aerosol-generating matrix in the
相对现有的棉芯发热体和多孔陶瓷发热体,本申请提供的这种带微孔的薄片式结构的发热体11供液通道更短,供液速度更快,但漏液风险液更大。因此,本申请发明人研究了致密基体111厚度与微孔113的孔径的比例对发热体11导液的影响,结果发现,增大致密基体111厚度、减小微孔113的孔径可以降低漏液风险但也会减小供液速率,减小致密基体111的厚度、增大微孔113的孔径可以增大供液速率但又会提高漏液风险,二者相互矛盾。为此,本申请设计了致密基体111的厚度、微孔113的孔径,以及致密基体111厚度与微孔113孔径的比例,使发热体11在功率为6瓦-8.5瓦、电压为2.5伏-4.4伏工作时,既能实现充足的供液,也能防止漏液。其中,致密基体111的厚度为第一表面1111与第二表面1112之间的距离。Compared with the existing cotton core heating element and porous ceramic heating element, the
另外,本申请发明人研究了相邻微孔113的孔中心距与微孔113孔径的比值,发现如果相邻微孔113的孔中心距与微孔113孔径的比值过大,致密基体111的强度较大也容易加工,但是孔隙率太小,容易导致供液量不足;如果相邻微孔113的孔中心距与微孔113孔径的比值过小,孔隙率较大,供液量充足,但是致密基体111的强度较小而且不容易加工;为此,本申请还设计了相邻微孔113的孔中心距与微孔113孔径的比值,在满足供液能力的前提下,尽可能提升了致密基体111的强度。In addition, the inventors of the present application studied the ratio of the hole center distance of the adjacent
下面以致密基体111的材料为玻璃进行介绍。In the following, the material of the
具体地,第一表面1111和第二表面1112均包括光滑表面,第一表面1111为平面。也就是说,致密基体111的第一表面1111为光滑表面,且为平面,发热膜112形成于第一表面1111,第一表面1111为光滑表面有利于金属材料在厚度较小的情况下沉积成膜。Specifically, both the
在一实施方式中,致密基体111的第一平面1111和第二表面1112均为光滑表面,均为平面,且致密基体111的第一表面1111和第二表面1112平行设置;微孔113贯穿第一表面1111和第二表面1112,微孔113的轴线与第一表面1111和第二表面1112垂直,微孔113的截面为圆形;此时,致密基体111的厚度与微孔113的长度相等。可以理解,第二表面1112与第一表面1111平行,微孔113由第一表面1111贯穿至第二表面1112,使得致密基体111的生产工艺简单,降低成本。致密基体111的厚度为第一表面1111与第二表面1112之间的距离。微孔113可以为孔径均匀的直通孔,也可以为孔径不均匀的直通孔,只要孔径的变化范围在50%之内即可。例如,由于制备工艺所限,通过激光诱导和腐蚀在玻璃上开设的微孔113通常为两端孔径大中间孔径小。因此,只要确保微孔113的中间部分的孔径不小于两端端口的孔径的一半即可。In one embodiment, the
在另一实施方式中,致密基体111的第一表面1111为光滑表面,且为平面,以利于金属材料在厚度较小的情况下沉积成膜。致密基体111的第二表面1112为光滑表面,且第二表面1112可以为非平面,例如,斜面、弧面、锯齿面等,第二表面1112可以根据具体需要进行设计,只需使微孔113贯穿第一表面1111和第二表面1112即可。In another embodiment, the
下面以致密基体111的材料为玻璃,且致密基体111的第一表面1111和第二表面1112均为光滑的平面且平行设置时,致密基体111的厚度、致密基体111厚度与微孔113孔径的比例、相邻两个微孔113之间的孔中心距与微孔113的孔径的比例进行介绍。In the following, when the material of the
致密基体111的厚度为0.1毫米-1毫米。致密基体111的厚度大于1毫米时,无法满足供液需求,导致气溶胶量下降,且造成的热损失多,设置微孔113的成本高;致密基体111的厚度小于0.1毫米时,无法保证致密基体111的强度,不利于提高电子雾化装置的性能。优选,致密基体111的厚度为0.2毫米-0.5毫米。致密基体111上微孔113的孔径为1微米-100微米。微孔113的孔径小于1微米时,无法满足供液需求,导致气溶胶量下降;微孔113的孔径大于100微米时,气溶胶生成基质容易从微孔113内流出至第一表面1111造成漏液,导致雾化效率下降。优选,微孔113的孔径为20微米-50微米。可以理解的是,致密基体111的厚度和微孔113的孔径根据实际需要进行选择。The thickness of the
致密基体111厚度与微孔113孔径的比例为20:1-3:1;优选,致密基体111厚度与微孔113孔径的比例为15:1-5:1(参见图19,通过实验发现致密基体111厚度与微孔113孔径的比例为15:1-5:1时,具有较好的雾化效果)。当致密基体111的厚度与微孔113的孔径的比例大于20:1时,通过微孔113的毛细作用力供给的气溶胶生成基质难以满足发热体11的雾化需求量,不仅容易导致干烧,且单次雾化产生的气溶胶量下降;当致密基体111的厚度与微孔113的孔径的比例小于3:1时,气溶胶生成基质容易从微孔113内流出至第一表面1111,气溶胶生成基质浪费,导致雾化效率下降,进而使得总气溶胶量降低。The ratio of the thickness of the
相邻两个微孔113之间的孔中心距与微孔113的孔径的比例为3:1-1.5:1,以使致密基体111上的微孔113在满足供液能力的前提下,尽可能提升致密基体111的强度;优选,相邻两个微孔113之间的孔中心距与微孔113的孔径的比例为3:1-2:1;更优选,相邻两个微孔113之间的孔中心距与微孔113的孔径的比例为3:1-2.5:1。The ratio of the hole center distance between two
在一个具体实施例中,优选,致密基体111的厚度与微孔113的孔径的比例为15:1-5:1,相邻两个微孔113之间的孔中心距与微孔113的孔径的比例为3:1-2.5:1。In a specific embodiment, preferably, the ratio of the thickness of the
请参阅图5a、图5b、图5c和图5d,图5a是图3提供的致密基体中微孔第一实施方式的结构示意图,图5b是图3提供的致密基体中微孔第二实施方式的结构示意图,图5c是图3提供的致密基体中微孔第三实施方式的结构示意图,图5d是图3提供的致密基体中微孔第四实施方式的结构示意图。Please refer to FIGS. 5a , 5b , 5c and 5d , FIG. 5a is a schematic structural diagram of the first embodiment of the micropores in the dense matrix provided in FIG. 3 , and FIG. 5b is the second embodiment of the micropores in the dense matrix provided by FIG. 3 FIG. 5c is a schematic structural diagram of the third embodiment of the micropores in the dense matrix provided in FIG. 3 , and FIG. 5d is a schematic structural diagram of the fourth embodiment of the micropores in the dense matrix provided by FIG. 3 .
在其他实施方式中,微孔113还可以是其他结构,请参见图5a、图5b、图5c和图5d。微孔113的延伸方向与致密基体111的厚度方向垂直。具体地,微孔113的纵截面可以为矩形(如图5a所示)、梯形(如图5b所示)、两端大中间小的哑铃形(如图5c所示)等。在另一实施方式中,微孔113的延伸方向与致密基体111的厚度方向形成夹角,夹角的范围为80度-90度;当微孔113的纵截面为矩形,结构如图5d所示。由于微孔113被设置呈规则的几何形状,因此微孔113在发热体11的体积能够计算得出,从而也可以计算得出整个发热体11的孔隙率,使得同类产品的发热体11的孔隙率的一致性能够得到良好的保证。In other embodiments, the
请参阅图6a和图6b,图6a是图3提供的致密基体第一实施方式的俯视结构示意图,图6b是图3提供的致密基体第二实施方式的俯视结构示意图。Please refer to FIGS. 6 a and 6 b , FIG. 6 a is a schematic top view of the first embodiment of the dense matrix provided in FIG. 3 , and FIG. 6 b is a top view of the structure of the second embodiment of the dense matrix provided in FIG. 3 .
具体的,致密基体111为规则的形状,如矩形板状、圆形板状等。在本实施方式中,设置于致密基体111上的多个微孔113呈阵列排布;即,设置于致密基体111上的多个微孔113之间呈规则排布,多个微孔113中相邻的微孔113之间的孔中心距相同。可选的,多个微孔113呈矩形阵列排列;或多个微孔113呈圆形阵列排列;或多个微孔113呈六角形阵列排列。其中,多个微孔113的孔径可以相同,也可以不同,根据需要进行设计。Specifically, the
在一实施方式中,致密基体111为矩形板状,设置于致密基体111上的多个微孔113的形状和孔径相同且呈矩形阵列排列,如图6a所示。In one embodiment, the
在另一实施方式中,致密基体111为矩形板状,致密基体111的第一表面1111包括第一孔径微孔阵列区1113和第二孔径微孔阵列区1114,第二孔径微孔阵列区1114的微孔113的孔径与第一孔径微孔阵列区1113的微孔113的孔径不同,第二孔径微孔阵列区1114的微孔113的形状与第一孔径微孔阵列区1113的微孔113的形状相同;第二孔径微孔阵列区1114的微孔113和第一孔径微孔阵列区1113的微孔113均呈矩形阵列排列;第一孔径微孔阵列区1113位于第二孔径微孔阵列区1114的两侧,第二孔径微孔阵列区1114的微孔113的孔径小于第一孔径微孔阵列区1113的微孔113的孔径,如图6b所示。可以理解的是,也可以是第二孔径微孔阵列区1114位于第一孔径微孔阵列区1113的两侧,第二孔径微孔阵列区1114的微孔113的孔径小于第一孔径微孔阵列区1113的微孔113的孔径,第一孔径微孔阵列区1113、第二孔径微孔阵列区1114及设置于其中的微孔113根据需要进行设计。In another embodiment, the
在其他实施方式中,微孔113的轴线不与第一表面1111和第二表面1112垂直。微孔113的一端开口位于第一表面1111,微孔113的另一端开口可以位于连接第一表面1111和第二表面1112的第三表面(图未示)上;或,微孔113的另一端开口位于第二表面1112,且微孔113呈曲线延伸;微孔113的结构可以根据需要进行设计,能够利用其毛细作用力将气溶胶生成基质导引至第一表面1111即可。In other embodiments, the axes of the micro-holes 113 are not perpendicular to the
请参阅图7,图7是图6b提供的致密基体的制作工艺流程示意图。图8a为图7中步骤S1的俯视结构示意图;图8b为图7中步骤S1的侧视结构示意图;图8c为图7中步骤S2的俯视结构示意图;图8d为图7中步骤S2的侧视结构示意图。Please refer to FIG. 7. FIG. 7 is a schematic diagram of a manufacturing process flow of the dense substrate provided in FIG. 6b. Fig. 8a is a schematic top view structure of step S1 in Fig. 7; Fig. 8b is a side view structure view of step S1 in Fig. 7; Fig. 8c is a top view structure diagram of step S2 in Fig. 7; Fig. 8d is a side view of step S2 in Fig. 7 View the schematic diagram of the structure.
在一个实施例中,致密基体为玻璃,称之为导液玻璃基体,导液玻璃基体的制造方法包括如下步骤:In one embodiment, the dense substrate is glass, which is called a liquid-conducting glass substrate, and the manufacturing method of the liquid-conducting glass substrate includes the following steps:
步骤S1:对待加工基体进行第一次激光诱导和腐蚀,形成第一微孔的预制孔。Step S1: the substrate to be processed is subjected to the first laser induction and corrosion to form prefabricated holes of the first micro-holes.
具体的,参见图8a-8b,提供待加工基体111a,待加工基体111a包括第一表面1111a以及与第一表面1111a相对的第二表面1111b,对待加工基体111a进行第一次激光诱导,将进行第一次激光诱导后的待加工基体111a浸入腐蚀溶液中,形成第一微孔113a的预制孔。第一微孔113a的预制孔具有预制孔径,且预制孔贯穿第一表面1111a和第二表面1111b。Specifically, referring to FIGS. 8a-8b, a
经过步骤S1,在待加工基体111a上形成包括多个具有预制孔径的预制孔的第一微孔阵列113c。After step S1, a first
步骤S2:对待加工基体进行第二次激光诱导和腐蚀,形成第二微孔,第二微孔具有第二孔径,其中,对待加工基体进行第二次腐蚀的过程使得第一微孔的预制孔由预制孔径扩大为第一孔径。Step S2: performing the second laser induction and etching on the substrate to be processed to form second micro-holes, and the second micro-holes have a second aperture, wherein the process of performing the second etching on the substrate to be processed makes the prefabricated holes of the first micro-holes The prefabricated aperture is enlarged to the first aperture.
具体的,参见图8c-8d,对待加工基体111a按照第二孔径进行第二次激光诱导,将进行第二次激光诱导后的待加工基体111a浸入腐蚀溶液中,形成第二微孔113b,第二微孔113b具有第二孔径,其中,对待加工基体111a进行第二次腐蚀的过程使得第一微孔113a的预制孔由预制孔径扩大为第一孔径,且第一微孔113a贯穿第一表面1111a和第二表面1111b,从而得到具有不同孔径的导液微孔113的导液玻璃基体116。Specifically, referring to FIGS. 8c-8d, the
经过步骤S2,在导液玻璃基体116上形成包括多个具有第二孔径的第二微孔113b的第二微孔阵列113d和包括多个具有第一孔径的第一微孔113a的第一微孔阵列113c。After step S2, a
在一具体实施例中,为了控制第一微孔113a和第二微孔113b的孔径大小,致密基体的制造方法包括:In a specific embodiment, in order to control the pore size of the
S11:对待加工基体按照第三孔径的第一微孔的分布进行激光诱导。S11: The substrate to be processed is subjected to laser induction according to the distribution of the first micropores of the third aperture.
参见图8a-8b,待加工基体111a的材料为玻璃,玻璃可以为硼硅玻璃、石英玻璃以及光敏铝硅酸锂玻璃中的一种或多种,待加工基体111a包括第一表面1111a以及与第一表面1111a相对的第二表面1111b,对待加工基体111a按照第一孔径采用频率100kHz-200kHz、脉宽小于10皮秒的红外皮秒或飞秒激光进行第一次照射。该步骤中,第一孔径范围内的待加工基体111a的材料均被激光诱导,能够在后续腐蚀过程中去除。8a-8b, the material of the
S12:对进行第一次激光诱导的基体进行第一次腐蚀,腐蚀时间为第一孔径的第一微孔所需总腐蚀时间(N)减去第二孔径的第二微孔所需腐蚀时间(M)。S12: perform the first etching on the substrate subjected to the first laser induction, and the etching time is the total etching time (N) required for the first micropores of the first aperture minus the etching time required for the second micropores of the second aperture (M).
具体地,将进行第一次激光诱导后的待加工基体111a浸入温度为30℃~60℃的腐蚀溶液中,腐蚀溶液可选酸性腐蚀溶液氢氟酸溶液或碱性腐蚀溶液氢氧化钠溶液,经过激光改性部位的腐蚀速度比未改性的部位大几十倍,因此在待加工基体111a上形成具有预制孔径的预制孔,且预制孔贯穿第一表面1111a和第二表面1111b。Specifically, the
具体的,制备前先通过实验确定腐蚀出第一孔径的第一微孔113a需要N分钟,确定腐蚀出第二孔径的第二微孔113b需要M分钟,那么,在本步骤中,第一次腐蚀时间为N-M分钟。也就是说,N为形成具有第一孔径的第一微孔113a的第一腐蚀时间,M为形成具有第二孔径的第二微孔113b的第二腐蚀时间,N-M为形成具有第一孔径的第一微孔113a的第一腐蚀时间与形成具有第二孔径的第二微孔113b的第二腐蚀时间的时间差。Specifically, before preparation, it is determined through experiments that it takes N minutes to etch out the
在其他具体实施例中,对待加工基体111a进行第一次腐蚀采用对喷、搅拌、鼓气等腐蚀方式,使得腐蚀溶液充分交换流动,腐蚀出的第一微孔113a的侧壁更加均匀和光滑。进一步的,将腐蚀溶液温度预热到30℃~60℃之间,可以加快腐蚀速度。In other specific embodiments, the first etching of the
在一具体实施例中,经过步骤S11和S12,在待加工基体111a上形成包括多个具有预制孔径的预制孔的第一微孔阵列113c。In a specific embodiment, after steps S11 and S12, a first
S13:对待加工基体按照第二孔径进行激光诱导。S13: The substrate to be processed is subjected to laser induction according to the second aperture.
参见图8c-8d,对经过第一次激光诱导和腐蚀的待加工基体111a进行按照第二孔径采用频率100kHz-200kHz、脉宽小于10皮秒的红外皮秒或飞秒激光进行第二次照射。第二次照射的区域不同于第一次照射的区域。该步骤中,第二孔径范围内的待加工基体111a的材料均被激光诱导,能够在后续腐蚀过程中去除。Referring to Figs. 8c-8d, the
S14:对进行第二次激光诱导的基体进行时间为第二孔径的第二微孔所需腐蚀时间(M)的第二次腐蚀。S14: performing a second etching on the substrate subjected to the second laser induction for the etching time (M) required for the second micropore of the second aperture.
该步骤中,将进行第二次激光诱导后的待加工基体111a浸入腐蚀溶液中,浸泡时间M分钟后,在待加工基体111a上形成具有第二孔径的第二微孔113b,其中,对待加工基体111a进行第二次腐蚀的过程使得预制孔由预制孔径扩大为第一孔径,形成第一微孔113a。具体的,待加工基体111a经过两次腐蚀溶液的浸泡,厚度有一定的减小,且第一微孔113a和第二微孔113b贯穿第一表面1111a和第二表面1111b,从而得到具有不同孔径的导液微孔113的导液玻璃基体116。可以理解的是,导液玻璃基体116由硼硅玻璃、石英玻璃或光敏铝硅酸锂玻璃等玻璃或致密陶瓷制成时,为致密基体111。In this step, the
在一具体实施例中,经过步骤S13和S14,在导液玻璃基体116上形成包括多个具有第二孔径的第二微孔113b的第二微孔阵列113d和包括多个具有第一孔径的第一微孔113a的第一微孔阵列113c。In a specific embodiment, after steps S13 and S14, a
由于发热体11中的致密基体111为致密材料,能够起到结构支撑的作用。相对于现有的棉芯发热体的弹簧状的金属发热丝和多孔陶瓷发热体的金属厚膜导线,对发热体11中的发热膜112的强度和厚度无要求,发热膜112可以采用低电阻率的金属材料。Since the
在一实施方式中,形成于致密基体111的第一表面1111上的发热膜112为薄膜,发热膜112的厚度范围为200纳米-5微米,即发热膜112的厚度较薄;优选,发热膜112的厚度范围为200纳米-1微米;更优选,发热膜112的厚度范围为200纳米-500纳米。当发热膜112为薄膜时,微孔113贯穿发热膜112。进一步,发热膜112还形成于微孔113的内表面;优选,发热膜112还形成于微孔113的整个内表面(结构如图3所示)。在微孔113的内表面设置有发热膜112,使得气溶胶生成基质在微孔113内就可以被雾化,有利于提高雾化效果。In one embodiment, the
发热膜112越薄,对微孔113的孔径的影响就越小,进而实现较好的雾化效果;而且发热膜112越薄,发热膜112本身吸热少,电热损耗低,发热体11升温速度快。在发热膜112在常温下的电阻为0.5欧姆-2欧姆的基础上,本申请采用低导电率的金属材料,以形成较薄的金属膜,尽可能降低对微孔113的孔径的影响。可选的,发热膜112的电阻率不大于0.06*10-6Ω·m。发热膜112的低导电率的金属材料包括银及其合金、铜及其合金、铝及其合金、金及其合金;可选的,发热膜112的材料可以包括铝及其合金、金及其合金。通电加热时,发热膜112可以快速升温,直接加热微孔113内的气溶胶生成基质,实现高效雾化。The thinner the
进一步,本申请发明人研究发现,液态气溶胶生成基质中包含各种香精香料和添加剂,含硫、磷、氯等元素,发热膜122通电加热时银和铜易发生腐蚀失效。金具有非常强的化学惰性,铝表面会生成致密氧化薄膜,这两种材料在液态气溶胶生成基质非常稳定,优选作为发热膜122材料。Further, the inventors of the present application have found that the liquid aerosol generation matrix contains various flavors and fragrances and additives, and contains elements such as sulfur, phosphorus, and chlorine. When the heating film 122 is electrically heated, silver and copper are prone to corrosion failure. Gold has very strong chemical inertness, and a dense oxide film will be formed on the surface of aluminum. These two materials are very stable in the liquid aerosol generating matrix, and are preferably used as the material of the heating film 122 .
发热膜112可以通过物理气相沉积(如,磁控溅射、真空蒸发、离子镀)或化学气相沉积(离子体辅助化学沉积、激光辅助化学沉积、金属有机化合物沉积)的方式形成于致密基体111的第一表面1111。可以理解的是,发热膜112的形成工艺使其不会覆盖微孔113,即,微孔113贯穿发热膜112。通过物理气相沉积或化学气相沉积在致密基体111的第一表面1111形成发热膜112的同时也就在微孔113的内表面形成了发热膜112。在选用磁控溅射的方式在致密基体111的第一表面1111形成发热膜112时,磁控溅射时金属原子与第一表面1111垂直,与微孔113的内表面平行,金属原子更容易沉积在第一表面1111;假设金属原子沉积在第一表面1111形成的发热膜112的厚度为1微米,此时金属原子沉积在微孔113的内表面的厚度远小于1微米,甚至达不到0.5微米;发热膜112沉积在第一表面1111的厚度越薄,形成于微孔113内表面的发热膜112的厚度越薄,对微孔113的孔径影响越小。由于发热膜112的厚度远小于微孔113的孔径,且发热膜112沉积于微孔113内的部分的厚度要小于沉积于致密基体111的第一表面1111的部分的厚度,因此,发热膜112沉积于微孔113内对微孔113的孔径影响可以忽略。The
在另一实施方式中,形成于致密基体111的第一表面1111上的发热膜112为厚膜,发热膜112的厚度范围为5微米-100微米,优选,5微米-50微米。在发热膜112的电阻为0.5欧姆-2欧姆的基础上,发热膜112的材料包括镍铬合金、镍铬铁合金、铁铬铝合金、镍、铂、钛中的一种。发热膜112通过印刷的方式形成于致密基体111的第一表面1111;由于致密基体111的第一表面1111的粗糙度低,发热膜112的厚度在100微米下就可以形成连续的膜状。此时,致密基体111的第一表面1111包括微孔图案区1115和非微孔图案区1116,发热膜112形成于非微孔图案区1116;也就是说,致密基体111的第一表面1111上设置发热膜112处并未设置微孔113,以保证发热膜112的稳定性和一致性。(如图9a所示,图9a是本申请提供的发热体中发热膜为厚膜时的俯视结构示意图)。In another embodiment, the
请参阅图9b,图9b是图3提供的发热体的俯视结构示意图。Please refer to FIG. 9b , which is a schematic top view of the structure of the heating element provided in FIG. 3 .
发热膜112的形状可以为片状、网状或条状。本申请的片状和条状指发热膜112的长径比不同,长径比大于2可以认为是条状,小于2可以认为是片状。在材料与厚度相同条件下,条状发热膜112的电阻大于片状发热膜112的电阻。当发热膜112为片状时,发热膜112可以覆盖整个第一表面1111,在致密基体111的第一表面1111形成的温度场均一;由于气溶胶生成基质通常包含多种组分,温度场均一,不利于对气溶胶生成基质的还原。当发热膜112为条状时,发热膜112仅覆盖部分第一表面1111,发热膜112在致密基体111的第一表面1111形成具有梯度的温度场,梯度的温度场分别包括气溶胶生成基质中的不同组分的沸点温度,可以使得气溶胶生成基质中的各个组分都有在其沸点进行雾化,实现较好的雾化效果,有利于提高气溶胶生成基质的还原度。当发热膜112为网状时,网格的大小决定着发热膜112在致密基体111的第一表面1111形成的温度场是否均一,网格的大小根据需要进行设计;即使将网格的大小设置为可以使发热膜112在致密基体111的第一表面1111形成具有温度梯度温度场,其雾化效果没有发热膜112为条状时的雾化效果好。The shape of the
在其他实施方式中,发热膜112为片状时,发热膜112可以覆盖整个第一表面1111,通过使不同区域的发热膜112的厚度不均匀,或不同区域的发热膜112材料不同,使发热膜112在致密基体111的第一表面1111形成具有梯度的温度场。可以理解,采用物理气相沉积或化学气相沉积的方式沉积发热膜112,通过调整致密基体111与材料源的位置关系,容易实现梯度厚度的发热膜112。In other embodiments, when the
对发热膜112为条状进行介绍,结构如图9b所示。致密基体111为矩形板状,发热膜112包括发热膜本体1121和电极1122。电极1122包括正电极和负电极。为了实现较好的雾化效果,将发热膜本体1121设计为S型弯曲的条状,以在致密基体111的第一表面1111形成具有温度梯度的温度场,也就是说,在致密基体111的第一表面1111形成高温区和低温区,最大限度的将气溶胶生成基质中的多种组分雾化。发热膜本体1121的一端连接正电极,另一端连接负电极。电极1122的尺寸比发热膜本体1121的尺寸大,以便于电极1122更好的与电源组件2实现电连接。在本实施方式中,发热膜本体1121和电极1122一体成型,即,发热膜本体1121和电极1122的材料相同;在其他实施方式中,发热膜本体1121和电极1122的材料可以不同,能够实现其功能即可。The strip shape of the
本申请发明人研究发现,由于条状发热膜112为条状细长结构,同等情况下电阻比片状发热膜112的电阻更大,因此,为了制备厚度为纳米级,尤其是厚度为200纳米-500纳米的条状发热膜112,发热膜112的材料只能选择铝、金、银和铜等电阻率不大于0.03*10-6Ω·m的材料。The inventor of the present application has found that, because the strip-shaped
致密基体111的第一表面1111包括微孔区域1117和非微孔区域1118,电极1122设置于非微孔区域1118,发热膜本体1121设置于微孔区域1117。由于图9b所示的发热膜112为薄膜,部分微孔113贯穿发热膜本体1121。The
可以理解的是,当致密基体111上设置的多个微孔113的孔径不同时,微孔区域1117包括第一孔径微孔阵列区1113和第二孔径微孔阵列区1114,第一孔径微孔阵列区1113中微孔113的孔径相同,第二孔径微孔阵列区1114中微孔113的孔径相同,第一孔径微孔阵列区1113中微孔113的孔径与第二孔径微孔阵列区1114中微孔113的孔径不同,具体根据需要进行设计。当形成于致密基体111的第一表面1111上的发热膜112为厚膜时,发热膜本体1121设置于微孔区域1117,电极1122设置于非微孔区域1118;由于形成厚膜发热膜112的工艺条件,微孔区域1117设置有发热膜本体1121处未设置微孔113;即,微孔区域1117包括微孔图案区1115和非微孔图案区1116,发热膜本体1121设置于非微孔图案区1116。It can be understood that when the pore diameters of the plurality of
如上所述,为了制备厚度小于5微米,甚至纳米级的发热膜112,铝、金、银和铜成为首选材料。但是材料为银和铜的发热膜112在液态气溶胶生成基质中容易被腐蚀而失效。另外,长期大功率使用,材料为铝的发热膜112也有失效的风险。为此,本申请发明人研究了发热膜112的保护层,发现现有的氧化物和氮化物保护层,例如二氧化硅,与金属的热膨胀系数差别过大,热循环时膜层间内应力会导致保护层迅速失效。而且,氧化物和氮化物导电性差,作为保护层,如果覆盖发热膜和电极,会导致电极与引线或顶针的电接触效果;若不覆盖电极,则制备工艺复杂。为了解决上述问题,本申请提供进一步在发热体11的发热膜112上设置了保护膜115。As mentioned above, in order to prepare the
请参阅图10和图11,图10是本申请提供的发热体包括保护膜且发热膜为薄膜的局部结构示意图,图11是本申请提供的发热体包括保护膜且发热膜为厚膜的俯视结构示意图。Please refer to FIG. 10 and FIG. 11 , FIG. 10 is a schematic diagram of the partial structure of the heating element provided by the application including a protective film and the heating film is a thin film, and FIG. 11 is a top view of the heating element provided by the application including a protective film and the heating film is a thick film Schematic.
进一步,发热体11还包括保护膜115。保护膜115形成于发热膜112远离致密基体111的表面,保护膜115的材料为耐气溶胶生成基质腐蚀的金属合金,以防止气溶胶生成基质对发热膜112的腐蚀,实现对发热膜112的保护,进而提高电子雾化装置的性能。Further, the
当发热膜112为薄膜时(结构如图10所示),发热膜112的厚度为200纳米-5微米,发热膜112的电阻率不大于0.06*10-6Ω·m,发热膜112的材料为铜及其合金、银及其合金、铝及其合金、金及其合金,发热膜112通过物理气相沉积或化学气相沉积形成于致密基体111的第一表面1111;可选的,发热膜112的材料为铜、银、铝、金、铝合金、铝金合金中的一种。保护膜115的厚度为100纳米-1000纳米,保护膜115的材料为不锈钢、镍铬铁合金、镍基耐腐蚀合金中的一种;其中,不锈钢可以是304不锈钢、316L不锈钢、317L不锈钢、904L不锈钢等,镍铬铁合金可以是inconel625、inconel718等,镍基耐腐蚀合金可以是镍钼合金B-2、镍铬钼合金C-276等。优选,保护膜115的材料为不锈钢。保护膜115通过物理气相沉积(如,磁控溅射、真空蒸发、离子镀)或化学气相沉积(离子体辅助化学沉积、激光辅助化学沉积、金属有机化合物沉积)的方式形成于发热膜112远离致密基体111的表面。可以理解的是,发热膜112和保护膜115的形成工艺使其不会覆盖微孔113,即,微孔113贯穿发热膜112和保护膜115。由于保护膜115可以有效防止气溶胶生成基质腐蚀发热膜112,发热膜112的材料可以采用铜和银,从而制备纳米级的发热膜112。When the
当发热膜112为厚膜时(结构如图11所示),发热膜112的厚度为5微米-100微米,发热膜112的材料为镍铬合金、镍铬铁合金、铁铬铝合金、金、银、镍、铂、钛中的一种。保护膜115的厚度为5微米-20微米,保护膜115的材料为不锈钢、镍铬铁合金、镍基耐腐蚀合金中的一种;其中,不锈钢可以是304不锈钢、316L不锈钢、317L不锈钢、904L不锈钢等,镍铬铁合金可以是inconel625、inconel718等,镍基耐腐蚀合金可以是镍钼合金B-2、镍铬钼合金C-276等。优选,保护膜115的材料为不锈钢。当发热膜112和保护膜115均通过印刷的方式依次形成于致密基体111的第一表面1111,发热膜112的材料为镍铬合金、镍铬铁合金、铁铬铝合金、镍、铂、钛中的一种,保护膜115的材料为不锈钢;当发热膜112通过印刷的方式形成于致密基体111的第一表面1111,保护膜115通过物理气相沉积或化学气相沉积形成于发热膜112远离致密基体111的表面,发热膜112的材料为镍铬合金、镍铬铁合金、铁铬铝合金、镍、铂、钛中的一种,保护膜115的材料为不锈钢、镍铬铁合金、镍基耐腐蚀合金中的一种。采用在厚膜发热膜112的表面设置保护膜115,可以防止气溶胶生成基质腐蚀发热膜112。When the
保护膜115设置于发热膜112的表面,保护膜115为金属合金,从理论上讲,发热膜112在发热的同时,保护膜115也在发热;由于保护膜115的电阻远大于发热膜112的电阻,保护膜115几乎不发热,主要由发热膜112加热雾化气溶胶生成基质。例如,发热膜112的电阻约为1欧姆,保护膜115选用不锈钢,保护膜115的电阻约为30欧姆,保护膜115的电阻太大,且保护膜115的电阻远大于发热膜112的电阻,在电子雾化装置的功率为6瓦-8.5瓦、电池的电压为2.5伏-4.4伏的条件下,保护膜115无法发挥发热膜112的作用,即,保护膜115无法加热雾化气溶胶生成基质。The
在本申请中,发热膜112包括发热膜本体1121和电极1122,发热膜本体1121和电极1122的材料相同,保护膜115同时设置于发热膜本体1121和电极1122表面。可以理解,仅在发热膜本体1121上形成保护膜115,在电极1122上并不设置保护膜115,以降低电极1122的电阻,进而降低电极1122与电源组件2的顶针之间的电阻消耗,也就是说,保护膜115使发热膜112部分暴露以作为发热膜112的电极1122;进一步,可以将电极1122设置为与发热膜本体1121不同的材料,使电极1122的电阻较低,以降低电极1122与电源组件2的顶针之间的电阻消耗。In this application, the
可以理解的是,本申请提供的致密基体111的厚度、微孔113的孔径、致密基体111厚度与微孔113孔径的比例、相邻微孔113的孔中心距与微孔113孔径的比例可以根据需要进行组合设计;致密基体111可以与薄膜发热膜112(发热膜112的厚度为200纳米-5微米,发热膜112的电阻率不大于0.06*10-6Ω·m,发热膜112的材料为铜及其合金、银及其合金、铝及其合金、金及其合金)或厚膜发热膜112(发热膜112的厚度为5微米-100微米,发热膜112的材料为镍铬合金、镍铬铁合金、铁铬铝合金、镍、铂、钛中的一种)根据需要进行组合设计;可以根据需要设计保护膜115。本申请提供的发热体11中的保护膜115可以应用于传统的多孔陶瓷发热体表面,以实现对其发热膜的保护。It can be understood that the thickness of the
请参阅图12,图12是本申请提供的雾化组件包括疏松基体的局部结构示意图。Please refer to FIG. 12. FIG. 12 is a partial structural schematic diagram of the atomizing assembly provided by the present application including a loose matrix.
进一步,雾化组件1还包括疏松基体114,疏松基体114设置于发热体11的致密基体111的第二表面1112。疏松基体114可以为多孔陶瓷、海绵、泡沫、纤维层等材料,能够实现储液、导液、隔热的效果即可。也就是说,储液腔10中的气溶胶生成基质先通过疏松基体114导引至致密基体111的第二表面1112,再通过致密基体111上的微孔113导引至致密基体111的第一表面1111被发热膜112雾化。Further, the
下面通过实验验证,本申请提供的致密基体111上微孔113的设置方式、发热膜112材料的选择、保护膜115所带来的效果。The following experiments are used to verify the effects of the arrangement of the
实验一:发热膜112为薄膜时材料的选择。Experiment 1: Material selection when the
以本行业常见的发热膜112图形为例(如图9b所示的发热膜112的形状),发热膜112的长度8.5毫米,宽度为0.4毫米,电阻在常温下为1欧姆,发热膜112采用不同的材料,根据不同金属材料的电阻率可以得出所需发热膜112的理论厚度,结果如表1所示。Taking the common pattern of the
表1.金属材料电阻率与发热膜理论厚度Table 1. The resistivity of metal materials and the theoretical thickness of the heating film
根据表1可知,采用传统的镍铬合金、镍铬铁合金、铁铬铝合金时,发热膜112的理论厚度需要超过20μm,会严重影响雾化效率,在沉积过程中还会导致致密基体111中微孔113的孔径缩小,影响气溶胶生成基质的供给和雾化。采用银、铜、金、铝等低电阻率金属材料时,发热膜112的理论厚度小于1μm,不仅对致密基体111中微孔113的孔径没有影响,还减小了雾化时发热膜112吸收的能量。另外,银、铜、金、铝等材料的热导率远高于镍铬合金、镍铬铁合金、铁铬铝合金,有利于快速传导热量,增强雾化效率。According to Table 1, when traditional nickel-chromium alloys, nickel-chromium-iron alloys, and iron-chromium-aluminum alloys are used, the theoretical thickness of the
银、铜、金、铝等材料的发热膜112可以在PG/VG混合液(丙二醇/丙三醇混合液)中能长期稳定工作,但气溶胶生成基质中还包含各种香精香料和添加剂,而这些香精香料和添加剂中含硫、磷、氯等元素,可能会对发热膜112造成腐蚀。通过实验发现,采用银作为发热膜112材料时,湿烧热循环过程中发热膜112的电阻会不断增大,抽吸约30次后发热膜112失效;由于铜对氯离子的耐腐蚀性更强,当采用铜作为发热膜112的材料时,湿烧热循环过程中发热膜112电阻依然会增大,但发热膜112寿命可以延长至80次左右;铝在气溶胶生成基质的环境中更加稳定,表面能形成致密的氧化膜结构,在热循环过程中能承受600次以上;而金作为化学性质最稳定的金属,在热循环中更加稳定可靠,超过1500次以上的热循环电阻仍然无变化。The
因此,发热膜112的材料为银或铜时,发热膜112通电加热易发生腐蚀失效;由于金具有非常强的化学惰性,铝表面会生成致密氧化薄膜,由金或铝这两种材料形成的发热膜112在气溶胶生成基质中非常稳定,不易在发热膜112通电加热时发生腐蚀。因此,当发热体11不包括保护膜115时,发热膜112的材料为铝及其合金、金及其合金;当发热体11包括保护膜115,保护膜115可以防止发热体11被气溶胶生成基质腐蚀,对发热体11的材料无要求,发热膜112的材料为银及其合金、铜及其合金、铝及其合金、金及其合金。Therefore, when the material of the
选用铝作为发热膜112的材料,通过磁控溅射的方式沉积在致密基体111的第一表面1111,沉积的厚度为3微米,得到的SEM图如图13所示(图13是本申请提供的发热膜一实施方式的SEM图)。根据图13可知,发热膜112的沉积厚度为3微米,且微孔113的内表面也沉积有发热膜112,但对微孔113的孔径无明显影响。Aluminum is selected as the material of the
将本申请提供的发热体11与传统的多孔陶瓷发热体在6.5瓦下进行湿烧实验,得到各自的雾化气溶胶量,进行对比,得到如图14所示的结果(图14是本申请的发热体与传统多孔陶瓷发热体的雾化气溶胶量对比图);其中,本申请的发热体11;传统的多孔陶瓷发热体的孔隙率为57%-61%,厚度为1.6mm,孔径15-50μm。由图14可知,本申请的发热体11的气溶胶量在湿烧650次之后仍然稳定,传统的多孔陶瓷发热体的气溶胶量在湿烧650次之后开始明显下降;在同样的湿烧次数下,本申请提供的发热体11雾化的气溶胶量多于传统多孔陶瓷发热体雾化的气溶胶量,也就是说,本申请提供的发热体11可以实现高效雾化。The
实验二:验证本申请提供的保护膜115的作用。Experiment 2: Verify the function of the
通过将发热体11装弹湿烧来评价发热体11的寿命。实验条件:采用6.5瓦恒功率供电,抽吸3秒停27秒的模式,气溶胶生成基质为薄荷口味、50mg/100ml的尼古丁含量,发热膜112厚度为1-2微米;其中,将发热体11设置有保护膜115和未设置有保护膜115进行比较,并对保护膜115选用不同材料进行比较,模拟电子雾化装置的正常使用环境进行实验,比较结果如表2所示,得到发热膜112材料和保护膜115材料与发热体11寿命的关系。The life of the
表2.发热膜材料和保护层材料与发热体寿命的关系Table 2. Relationship between heating film material and protective layer material and the life of the heating element
表2中,以二氧化硅作为保护膜115的厚度为30nm,以氮化钛作为保护膜115的厚度为100nm,以316L不锈钢作为保护膜115的厚度为800nm。根据表2可知,银和铜作为发热膜112材料时,很容易被气溶胶生成基质中含硫、磷氯等元素的香精香料和添加剂腐蚀,难以满足寿命的要求;铝作为发热膜112材料时,能承受超过600次热循环,满足大多数电子雾化装置(电子雾化装置的功率为6瓦-8.5瓦)的使用条件,但难以满足电子雾化装置的功率大于10瓦时超过1500次的要求。In Table 2, the thickness of the
采用二氧化硅作为保护膜115材料时,由于二氧化硅与金属的热膨胀系数差别过大,热循环时膜层间内应力会导致保护膜115迅速失效,难以起到保护作用。可以理解,氧化锆和氧化铝作为保护膜115时,氧化锆和氧化铝与金属的热膨胀系数过大,易失效,难以起到保护作用。When silicon dioxide is used as the material of the
氮化钛作为常用的保护涂层,本申请通过铜作为发热膜112的材料验证氮化钛是否适合做保护膜115材料。湿烧过程中发热膜112电阻不断增大,至热循环130次后发热膜112失效(如图15所示,图15是本申请提供的发热体中发热膜失效图)。通过光学显微镜观察,发现发热膜112被严重腐蚀,从致密基体111脱落。从图16(图16是图15提供的发热膜失效图的SEM图和EDS图)中可以发现,发热膜112表面的氮化钛层已基本被完全腐蚀,露出发热膜112的铜层,而铜层也被严重腐蚀,部分区域露出致密基体111。也就是说,在本申请中,氮化钛制成的保护膜115也容易被气溶胶生成基质腐蚀。Titanium nitride is used as a commonly used protective coating. In this application, copper is used as the material of the
而采用不锈钢作为保护膜115材料时,不论发热膜112材料是银、铜还是铝都可以承受超过1500次热循环,能大幅度提升发热体11的寿命。并且,通过实验发现,具有较高镍含量的金属都可以对发热膜112起到保护作用。When stainless steel is used as the material of the
因此,本申请采用耐腐蚀性的不锈钢(304、316L、317L、904L等)、镍铬铁合金(inconel625、inconel718等)、镍基耐腐蚀合金(镍钼合金B-2、镍铬钼合金C-276)等作为保护膜115材料,提升发热体11寿命。不论发热膜112材料是银、铜还是铝,采用保护膜115后均能大幅度提升发热体11寿命。Therefore, this application adopts corrosion-resistant stainless steel (304, 316L, 317L, 904L, etc.), nickel-chromium-iron alloys (inconel625, inconel718, etc.), nickel-based corrosion-resistant alloys (nickel-molybdenum alloy B-2, nickel-chromium-molybdenum alloy C- 276) etc. as the material of the
发热膜112寿命随保护膜115厚度的增加而增加,如图17所示(图17是本申请提供的发热体中发热膜寿命与保护膜厚度的关系图)。由图17可知,在气溶胶生成基质采用薄荷50mg、保护膜115的材料为S316L不锈钢时,随着保护膜115的厚度的增加,发热膜112的电阻变化越小,发热膜112的寿命越长。The lifetime of the
实验三:致密基体111的厚度和微孔113的孔径对供液效率的影响。Experiment 3: Influence of the thickness of the
通过发热体11湿烧实验评估发热体11的供液效率,湿烧实验的原理如图18所示(图18是本申请提供的发热体湿烧实验示意图)。采用直流电源供电,通过电源组件2的顶针20(顶针20与电池电连接)分别连接发热膜112的电极1122,控制通电功率和通电时间,采用红外热成像仪或热电偶对发热膜112进行测温。The liquid supply efficiency of the
当发热膜112通电时,瞬间温度上升,使微孔113内的气溶胶生成基质气化,随着微孔113内气溶胶生成基质的消耗,微孔113的毛细作用使储液腔10内的气溶胶生成基质不断向发热膜112处补充。When the
气溶胶生成基质在具有毛细作用的微孔113内的流动可以根据Washburn方程推算,S是微孔113的孔面积,ρ是气溶胶生成基质密度,z是气溶胶生成基质经过的距离,γ是表面张力,μ是气溶胶生成基质的粘度,r是微孔113的半径,θ是气溶胶生成基质对致密基体111材料的接触角。气溶胶生成基质的雾化量如下:The flow of the aerosol-generating matrix in the
从公式可知,确定气溶胶生成基质和致密基体111的材料后,ρ、γ、μ、θ不变。微孔113的孔径越大,供液越充足,但产品在运输过程中的航空负压和使用过程中的温冲漏液风险也会更大。因此,致密基体111的厚度、孔径、厚径比非常重要,既要保证雾化过程中充足的供液,也要防止气溶胶生成基质漏出。It can be seen from the formula that after determining the materials of the aerosol-generating matrix and the
将发热体11装机测试,评价致密基体111厚度/微孔113孔径与雾化量之间的关系,结果如图19所示(图19是本申请提供的发热体的致密基体厚度/微孔孔径与雾化量之间的关系图)。由图19可知,当致密基体111厚度/微孔113孔径过大时,通过毛细作用供给的气溶胶生成基质难以满足雾化需求量,雾化量下降。当致密基体111厚度/微孔113孔径过小时,气溶胶生成基质容易从微孔113内流出至发热膜112面,导致雾化效率下降,雾化量降低。The
实验四:对本申请提供的发热体11与传统多孔陶瓷发热体的性能比较。Experiment 4: Comparison of the performance of the
如果气溶胶生成基质供给充足,在热平衡状态下,发热膜112温度会维持在气溶胶生成基质沸点附近;如果气溶胶生成基质供给不足,则会出现干烧,发热膜112温度高于气溶胶生成基质沸点。因此,可以通过发热体11湿烧实验评估发热体11的供液效率。If the supply of the aerosol-generating substrate is sufficient, in the thermal equilibrium state, the temperature of the
本申请提供的发热体11的致密基体111的厚度为0.2毫米、微孔113的孔径为30微米。对上述发热体11与传统多孔陶瓷发热体(孔隙率为57%-61%,厚度为1.6mm,孔径15-50μm)进行比较。The thickness of the
对于传统多孔陶瓷发热体,在功率6.5w条件下,通电后发热膜温度瞬间上升至270℃附近,3秒的加热持续时间内,温度几乎稳定不变,达到热平衡状态;但随着加热功率的增加,热平衡状态下的发热膜温度不断上升,说明承担导液功能的多孔陶瓷结构供液不足,如图20所示(图20是传统多孔陶瓷发热体的雾化温度与加热功率的关系图)。For the traditional porous ceramic heating element, under the condition of power of 6.5w, the temperature of the heating film instantly rises to around 270°C after energization, and the temperature is almost stable within the heating duration of 3 seconds, reaching a state of thermal equilibrium; but with the increase of heating power Increase, the temperature of the heating film in the thermal equilibrium state continues to rise, indicating that the liquid supply of the porous ceramic structure responsible for the liquid conduction function is insufficient, as shown in Figure 20 (Figure 20 is the relationship between the atomization temperature and the heating power of the traditional porous ceramic heating element) .
相对而言,当使用致密基体111的厚度为0.2mm,微孔113的孔径为30μm的发热体11时,功率6.5w-11.5w范围内,发热膜112的热平衡状态下温度都在250℃附近,如图21所示(图21是本申请提供的发热体的雾化温度与加热功率的关系图);说明该结构的致密基体111供液充足,且实验中也未发现漏液现象。Relatively speaking, when the thickness of the
在加热功率6.5w条件下,对本申请提供的发热体11的雾化温度与抽吸时间之间的关系进行研究,结果如图22所示(图22是本申请提供的发热体的雾化温度与抽吸时间之间的关系图)。由图22可知,随着加热时间的增加,本申请提供的发热体11在热平衡状态下的雾化温度也稳定不变;说明随着微孔113内气溶胶生成基质的不断消耗,发生沸腾雾化时,储液腔10内的气溶胶生成基质可以持续供给,能够满足雾化需求量,保证雾化量。Under the condition of heating power of 6.5w, the relationship between the atomization temperature of the
本申请的有益效果,区别于现有技术,本申请中的发热体包括导液玻璃基体和发热膜;具体制备方法包括:对待加工基体进行第一次激光诱导和腐蚀,形成第一微孔的预制孔,预制孔具有预制孔径;对待加工基体进行第二次激光诱导和腐蚀,形成第二微孔,第二微孔具有第二孔径,其中,对待加工基体进行第二次腐蚀的过程使得预制孔径扩大为第一孔径,预制孔转变为第一微孔,从而得到具有不同孔径的导液微孔的导液玻璃基体;在导液玻璃基体的第一表面形成发热膜。通过上述工艺,使得发热体在批量生产中,孔隙率可以精确控制,波动范围小,加热功率可以精准匹配,进而实现较好的雾化效果,适合大批量标准化生产。另外,由于对待加工基体进行第二次腐蚀的过程使得第一微孔由预制孔径扩大为第一孔径,相较于分别制备具有第二孔径的第二微孔和具有第一孔径的第一微孔,该方法工艺简单,成本较低。The beneficial effects of the present application are different from the prior art. The heating element in the present application includes a liquid-conducting glass substrate and a heating film; the specific preparation method includes: first laser induction and corrosion of the substrate to be processed to form first micropores. Prefabricated holes, the prefabricated holes have prefabricated apertures; the substrate to be processed is subjected to a second laser induction and etching to form second micropores, and the second micropores have a second aperture, wherein the second etching process of the substrate to be processed makes the prefabricated The pore size is expanded to the first pore size, and the prefabricated holes are transformed into first micropores, thereby obtaining a liquid-conducting glass substrate with liquid-conducting micropores of different pore sizes; a heating film is formed on the first surface of the liquid-conducting glass substrate. Through the above process, in mass production, the porosity of the heating element can be precisely controlled, the fluctuation range is small, and the heating power can be accurately matched, thereby achieving a better atomization effect, which is suitable for mass standardized production. In addition, due to the second etching process of the substrate to be processed, the first micropores are enlarged from prefabricated apertures to first apertures, compared with preparing second micropores with second apertures and first micropores with first apertures The method is simple in process and low in cost.
以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。The above description is only an embodiment of the present application, and is not intended to limit the scope of the patent of the present application. Any equivalent structure or equivalent process transformation made by using the contents of the description and drawings of the present application, or directly or indirectly applied to other related technologies Fields are similarly included within the scope of patent protection of this application.
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110757477.4A CN114794566B (en) | 2021-07-05 | 2021-07-05 | A method for preparing a liquid-conducting glass substrate and a heating element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110757477.4A CN114794566B (en) | 2021-07-05 | 2021-07-05 | A method for preparing a liquid-conducting glass substrate and a heating element |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114794566A true CN114794566A (en) | 2022-07-29 |
CN114794566B CN114794566B (en) | 2025-03-07 |
Family
ID=82526599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110757477.4A Active CN114794566B (en) | 2021-07-05 | 2021-07-05 | A method for preparing a liquid-conducting glass substrate and a heating element |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114794566B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115536285A (en) * | 2022-10-17 | 2022-12-30 | 深圳市益铂晶科技有限公司 | Vacuum plating processing method and structure of one-piece atomizing core |
WO2023134245A1 (en) * | 2022-01-11 | 2023-07-20 | 深圳麦克韦尔科技有限公司 | Tubular heating body, atomizer, and electronic atomization apparatus |
WO2024082647A1 (en) * | 2022-10-20 | 2024-04-25 | 东莞市克莱鹏雾化科技有限公司 | Split glass heating sheet and atomization device |
WO2024183667A1 (en) * | 2023-03-03 | 2024-09-12 | Shanghai QV Technologies Co., Ltd. | Atomization core for electronic atomizer and its processing method |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080252988A1 (en) * | 2005-02-21 | 2008-10-16 | Consiglio Nazionale Delle Ricerche-Infm Istituto Nazionale Per La Fisica Della Materia | Method of Fabricating Tridimensional Micro- and Nanostructures as Well as Optical Element Assembly Having a Tridimensional Convex Structure Obtained by the Method |
CN102869630A (en) * | 2010-02-10 | 2013-01-09 | 生命生物科学有限公司 | Methods to fabricate a photoactive substrate suitable for microfabrication |
EP2886185A1 (en) * | 2013-12-20 | 2015-06-24 | Activaero GmbH | Perforated membrane and process for its preparation |
JP2017068188A (en) * | 2015-10-02 | 2017-04-06 | 株式会社Nsc | Microlens array manufacturing method |
TW201803636A (en) * | 2016-07-21 | 2018-02-01 | 旭暉應用材料股份有限公司 | Porous substrate and oscillating assembly |
CN209376696U (en) * | 2018-11-29 | 2019-09-13 | 深圳市合元科技有限公司 | Electronic smoke atomizer and electronic cigarette comprising the electronic smoke atomizer |
CN111109665A (en) * | 2020-01-17 | 2020-05-08 | 深圳麦克韦尔科技有限公司 | Electronic atomization device and atomizer and heating body thereof |
CN112385898A (en) * | 2019-08-13 | 2021-02-23 | 彭晓峰 | Novel atomizing core |
WO2021033610A1 (en) * | 2019-08-19 | 2021-02-25 | Agc株式会社 | Method for producing glass article |
US20210197320A1 (en) * | 2019-12-26 | 2021-07-01 | AGC Inc. | Glass substrate having through hole and hollowed-out portion and method for producing the same |
-
2021
- 2021-07-05 CN CN202110757477.4A patent/CN114794566B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080252988A1 (en) * | 2005-02-21 | 2008-10-16 | Consiglio Nazionale Delle Ricerche-Infm Istituto Nazionale Per La Fisica Della Materia | Method of Fabricating Tridimensional Micro- and Nanostructures as Well as Optical Element Assembly Having a Tridimensional Convex Structure Obtained by the Method |
CN102869630A (en) * | 2010-02-10 | 2013-01-09 | 生命生物科学有限公司 | Methods to fabricate a photoactive substrate suitable for microfabrication |
EP2886185A1 (en) * | 2013-12-20 | 2015-06-24 | Activaero GmbH | Perforated membrane and process for its preparation |
JP2017068188A (en) * | 2015-10-02 | 2017-04-06 | 株式会社Nsc | Microlens array manufacturing method |
TW201803636A (en) * | 2016-07-21 | 2018-02-01 | 旭暉應用材料股份有限公司 | Porous substrate and oscillating assembly |
CN209376696U (en) * | 2018-11-29 | 2019-09-13 | 深圳市合元科技有限公司 | Electronic smoke atomizer and electronic cigarette comprising the electronic smoke atomizer |
CN112385898A (en) * | 2019-08-13 | 2021-02-23 | 彭晓峰 | Novel atomizing core |
WO2021033610A1 (en) * | 2019-08-19 | 2021-02-25 | Agc株式会社 | Method for producing glass article |
US20210197320A1 (en) * | 2019-12-26 | 2021-07-01 | AGC Inc. | Glass substrate having through hole and hollowed-out portion and method for producing the same |
CN111109665A (en) * | 2020-01-17 | 2020-05-08 | 深圳麦克韦尔科技有限公司 | Electronic atomization device and atomizer and heating body thereof |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023134245A1 (en) * | 2022-01-11 | 2023-07-20 | 深圳麦克韦尔科技有限公司 | Tubular heating body, atomizer, and electronic atomization apparatus |
CN115536285A (en) * | 2022-10-17 | 2022-12-30 | 深圳市益铂晶科技有限公司 | Vacuum plating processing method and structure of one-piece atomizing core |
WO2024082647A1 (en) * | 2022-10-20 | 2024-04-25 | 东莞市克莱鹏雾化科技有限公司 | Split glass heating sheet and atomization device |
WO2024183667A1 (en) * | 2023-03-03 | 2024-09-12 | Shanghai QV Technologies Co., Ltd. | Atomization core for electronic atomizer and its processing method |
Also Published As
Publication number | Publication date |
---|---|
CN114794566B (en) | 2025-03-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2022170728A1 (en) | Heating body, atomization assembly, and electronic atomization device | |
CN114794568A (en) | Heating body, atomizing component and electronic atomizing device | |
CN114794566A (en) | A kind of liquid-conducting glass substrate and preparation method of heating element | |
CN114794565A (en) | Heating body, atomizing component and electronic atomizing device | |
CN114794567A (en) | Heating body, atomizing component and electronic atomizing device | |
US20240041111A1 (en) | Cartridge for an aerosol-generating system | |
CN113141678A (en) | Method for manufacturing heating element | |
CN111109665A (en) | Electronic atomization device and atomizer and heating body thereof | |
WO2022170725A1 (en) | Preparation method for liquid-guiding glass substrate and heating body | |
WO2022170726A1 (en) | Heating body, atomization assembly, and electronic atomization device | |
WO2022170727A1 (en) | Heating body, atomization assembly, and electronic atomization device | |
CN114794551A (en) | Atomization components and electronic atomization devices | |
CN114794570A (en) | Heating element, atomization component and electronic atomization device | |
CN218921694U (en) | Heating element, atomizer and electronic atomization device | |
CN220343691U (en) | Heating components, atomizers and electronic atomization devices | |
CN216983627U (en) | Atomizing core with nano metal coating layer | |
CN117729955A (en) | Atomizer core and manufacturing method thereof | |
WO2022179641A2 (en) | Heating body, atomizer and electronic atomization device | |
CN219939729U (en) | Heating components, atomizers and electronic atomization devices | |
WO2023123250A1 (en) | Heating assembly, atomizer, and electronic atomization apparatus | |
CN114794569A (en) | Atomizing core, atomizer and electronic atomization device thereof | |
WO2022170756A1 (en) | Heating body, atomization assembly, and electronic atomization device | |
CN117084460A (en) | Heating body, atomizing assembly and electronic atomizing device | |
WO2023125850A1 (en) | Heating body, atomizer, and electronic atomization device | |
WO2023216263A1 (en) | Heat generating element, atomizing assembly, and electronic atomizing device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |