CN114790574A - A flow-adjustable vertical silicon epitaxy reaction chamber air inlet device - Google Patents

Abstract

The invention discloses a flow-adjustable air inlet device of a vertical silicon epitaxial reaction chamber. The air inlet device comprises an air inlet structure, a support ring, an annular flow dividing cavity structure and a flow regulating mechanism; the air inlet structure and the support ring are arranged in the middle of the flow regulating mechanism, and the flow regulating mechanism is arranged on the upper end surface of the annular diversion cavity structure; the air inlet structure, the annular flow dividing cavity structure and the flow regulating mechanism are communicated in sequence; the flow regulating mechanism comprises a rotating seat and a regulating plate layer, and the rotating seat, the air inlet structure, the regulating plate layer and the annular shunting cavity structure are sequentially and coaxially connected from top to bottom; the air inlet structure and the adjusting plate layer are connected through a support ring. The invention can convey air flow with uniform components to the silicon chip substrate, and can change the opening and closing areas of the air inlets of the outer flow channel and the inner flow channel by driving the rotating plate, thereby adjusting the flow ratio among different flow channels and effectively improving and adjusting the thickness uniformity of the surface of the substrate in the radial direction of the substrate.

Description

A flow-adjustable vertical silicon epitaxy reaction chamber air inlet device

technical field

The invention relates to a reaction chamber air inlet device, in particular to a flow-adjustable vertical silicon epitaxy reaction chamber air inlet device.

Background technique

The silicon epitaxy process refers to the use of chemical vapor deposition on the original silicon wafer substrate material to grow a film that is completely consistent with the lattice of the substrate material, and the epitaxial layer is also doped to form P-type or N-type doping. , to control the resistivity. The epitaxial process is often carried out at high temperature. The thickness uniformity of the epitaxially grown film determines the yield of subsequent device fabrication, while the thickness and doping uniformity of the epitaxial layer are mainly affected by the uniformity of the process gas.

A general silicon epitaxy reaction chamber includes an air inlet device, a quartz cavity, a graphite base, a heating device, an exhaust device, and the like. During operation, the graphite base is heated by the heating device, so as to conduct the heat to the silicon wafer substrate. When the surface temperature of the substrate reaches a suitable value for epitaxial growth, the carrier gas, reaction source gas, Doping gas, etc., the process gas is transported through the air inlet device to the surface of the silicon wafer substrate for deposition and growth, the unreacted process gas and by-products of the reaction are discharged through the exhaust device, and epitaxy with a specified thickness is sequentially grown epitaxially. Floor.

Since the silicon wafer substrate is placed on the continuously rotating graphite pedestal, the thickness of the substrate surface generally exhibits a radial average law, but due to the actual epitaxial growth, the gas concentration distribution in each radial region of the substrate surface It is not uniform and difficult to adjust, which profoundly affects the thickness and resistivity uniformity of the epitaxial growth layer.

SUMMARY OF THE INVENTION

In order to solve the problems existing in the background art, the present invention provides a vertical annular gas inlet device with uniform airflow mixing and adjustable gas flow at different radial positions on the substrate surface.

The technical scheme adopted in the present invention is:

The silicon epitaxial reaction chamber air inlet device of the present invention includes an air inlet structure, a support ring, an annular shunt cavity structure and a flow regulating mechanism; the inlet structure and the support ring are installed in the middle of the flow regulating mechanism, and the flow regulating mechanism is installed on the annular shunt cavity structure. The end face; the air intake structure, the annular shunt cavity structure and the flow regulating mechanism are communicated in sequence.

The flow regulating mechanism includes a rotating seat and a regulating plate layer. The rotating seat, the air intake structure, the regulating plate layer and the annular shunt cavity structure are coaxially connected in sequence from top to bottom; the air intake structure and the regulating plate layer are connected by a support ring.

The rotating seat of the flow regulating mechanism includes a rotating plate II, a rotating plate I and a rotating base that are coaxially stacked in sequence from top to bottom.

When rotating, the rotating plate II can rotate around its own axis on the upper end surface of the rotating plate I; when rotating, the rotating plate I can rotate around its own axis on the upper end surface of the rotating base.

The opposite sides of the bottom edge of the outer periphery of the rotating plate II are provided with the rotating plate II rotating sliders in the axial direction, and the two rotating plate II rotating sliders are both provided with rotating plate II locking holes along the radial direction of the rotating plate II. The symmetrical two sides of the upper end face of the rotating plate 1 are provided with two fan-shaped rotating plate I rotating grooves, and the outer peripheral side surfaces of the rotating plate I below the two rotating plate I rotating grooves are respectively provided with a fan-shaped rotating plate I locking. Each rotating plate I locking groove is communicated with a corresponding one of the rotating plate I rotating grooves; each rotating plate II rotating slider is slid downward and installed in a rotating plate I rotating groove, and the rotating plate II rotating slider The locking hole of the rotating plate II is facing the locking groove of the rotating plate I, and the rotating block of the rotating plate II can only rotate in the circumferential direction in the rotating groove of the rotating plate I.

When the rotating slider of the rotating plate II rotates to the designated position, the locking hole of the rotating plate II is limited to the designated position in the locking groove of the rotating plate I through the set screw passing through the locking groove of the rotating plate I.

The opposite sides of the outer peripheral bottom edge of the rotating plate I are provided with the rotating plate I rotating sliders in the axial direction, and the two rotating plate I rotating sliders are both provided with the rotating plate I locking holes along the radial direction of the rotating plate I. The rotating base is cylindrical, the symmetrical sides of the upper end face of the rotating base are provided with two fan-shaped rotating base rotating grooves, and the outer peripheral sides of the rotating base under the two rotating base rotating grooves are respectively provided with The rotary base locking groove of the fan-shaped ring, each rotary plate I locking groove is communicated with a corresponding one of the rotary plate I rotation grooves respectively; each rotary plate I rotary slider is slid down and installed in a rotary base rotary groove respectively Among them, the locking hole of the rotating plate I of the rotating block of the rotating plate I is facing the locking groove of the rotating base, and the rotating block of the rotating plate I can only rotate in the circumferential direction in the rotating groove of the rotating base.

When the rotary slider of the rotary plate I rotates to the designated position, the locking hole of the rotary plate I is limited to the designated position in the locking groove of the rotary base by the set screw passing through the locking groove of the rotary base.

A rotating bar for driving the rotating plate II and the rotating plate I to rotate is provided at the same position on the outer peripheral side of the rotating plate II and the rotating plate I.

The regulating plate layer of the flow regulating mechanism includes an outer flow channel flow regulating plate, a middle flow channel flow regulating plate and a flow regulating mother board which are arranged coaxially stacked in sequence from top to bottom and communicated with each other.

The outer runner flow regulating plate includes two concentric outer runner rings, the two outer runner rings are connected by a plurality of rib plates, and an outer runner ring on the outer side of the outer runner flow regulating plate is evenly spaced along the circumferential direction. Several outer flow channel flow adjustment holes.

The flow regulating plate of the middle flow channel includes two concentric middle flow channel rings, and the two middle flow channel rings are connected by a plurality of rib plates, and a middle flow channel ring on the inner side of the middle flow channel flow regulating plate is evenly spaced along the circumferential direction. There are several flow adjustment holes in the middle flow channel.

The flow regulating mother plate is annular, the inner side of the annular surface of the flow regulating mother plate is evenly spaced along the circumferential direction with a number of outer runner inlet holes, and the outer side of the annular surface of the flow regulating mother plate is evenly spaced along the circumferential direction with a number of intermediate flow Air intake holes.

The annular gap formed between the two outer flow channel rings of the outer channel flow regulating plate is a middle channel communication groove, and the central through hole of an outer channel ring on the inner side of the outer channel flow regulating plate is an inner channel communication hole; The annular gap formed between the two middle channel rings of the middle channel flow regulating plate is the outer channel communication groove, and the central through hole of a middle channel ring on the inner side of the middle channel flow regulating plate is the inner channel communication hole; the flow regulating mother The central through hole of the plate is the air inlet hole of the inner flow channel.

The inner flow channel communication hole, the inner flow channel communication hole and the inner flow channel air inlet hole are connected in sequence and have the same diameter; the middle flow channel communication groove, each middle flow channel flow adjustment hole and each middle flow channel air inlet hole are facing from top to bottom in order and have the same diameter. Communication; each outer flow channel flow adjustment hole, outer flow channel communication groove and each outer flow channel air inlet hole are facing and connected in sequence from top to bottom.

Each flow adjustment hole in the middle flow channel is directly opposite to a middle flow channel air intake hole; each outer flow channel flow adjustment hole is directly opposite to each outer flow channel air intake hole.

The diameter of the air inlet hole of the outer flow channel of the flow regulating mother plate is equal to the diameter of the outer flow channel flow regulating hole of the outer flow channel flow regulating plate; The diameter of the air inlet hole of the outer flow channel of the flow regulation motherboard is smaller than that of the air inlet hole of the middle flow channel.

The ring width of the middle flow channel communication groove of the outer flow channel flow regulating plate is equal to the aperture of the middle flow channel air inlet hole of the flow regulating mother board; The diameter of the air intake port.

The number of air inlet holes in the outer runners of the flow regulating mother plate is equal to the number of flow regulating holes in the outer runners of the flow regulating plate; The number of holes; the number of air inlet holes in the outer runner is greater than the number of air inlet holes in the middle runner.

The center of the outer channel flow regulating plate is provided with an upward tubular rotating shaft I;

The rotating shaft II passes through the center of the rotating shaft I and upwardly passes through the rotating seat of the flow regulating mechanism, and is then fixedly connected to the center of the rotating plate II; Center of plate I.

The outer side of the rotating shaft I is sheathed with a magnetic fluid sealing device for sealing.

When the rotating plate II rotates, it drives the rotating shaft II and the flow adjustment plate of the middle flow channel to rotate around its own axis, so that the communication area between the flow adjustment hole of the middle flow channel and the air intake hole of the middle flow channel is changed, so as to adjust the air intake flow of the middle flow channel. Effect.

When the rotating plate I rotates, it drives the rotating shaft I and the outer runner flow regulating plate to rotate around its own axis, so that the communication area between the outer runner flow regulating hole and the outer runner air inlet hole is changed, so as to adjust the outer runner air intake flow. Effect.

The diameters of the outer channel flow regulating plate and the middle channel flow regulating plate are the same, and the diameter of the flow regulating mother plate is larger than that of the middle channel flow regulating plate.

The inner diameter of the support ring is equal to the diameter of the flow regulating plate in the middle flow channel, and the thickness of the supporting ring is equal to the sum of the thicknesses of the flow regulating plate in the outer flow channel and the flow regulating plate in the middle flow channel.

The support ring is sleeved on the outer side of the outer runner flow regulating plate and the middle runner flow regulating plate. The upper and lower end faces of the supporting ring are welded with the air intake structure and the flow regulating motherboard respectively. The outer runner flow regulating plate and the middle runner flow regulating plate are welded together. Sealed between the intake structure and the flow regulating motherboard.

The support ring does not block the through holes of the air intake structure and the flow adjustment motherboard.

The air intake structure is in the shape of a disc, and the bottom of the disc shape of the air intake structure extends radially outward and is fixed to the upper end face of the support ring; the center of the air intake structure is provided with an axial communication hole, and the air intake structure is The interior is provided with a mixing cavity, a dilation hole and a diffusion cavity which are sequentially communicated from top to bottom; the communication hole is not communicated with the mixing cavity, and the diffusion cavity passes through the air intake structure to assist airflow diffusion.

The center top surface of the mixing chamber faces down to form a conical conical diffuser structure, and the center of the outer top surface of the conical diffuser structure is connected with a communication hole; the sidewall of the mixing chamber is evenly spaced with a number of pipes connected to the external gas pipeline. The tangential inlet flow channel is used to introduce process gas and mix; the expansion hole is a truncated cavity, and the diameter of the top surface of the truncated cone is smaller than the diameter of the mixing cavity; the connection between the expansion hole and the diffusion cavity is a larger circle horn.

The diffuser cavity is a downward-facing trumpet-shaped cavity, and each transition of the flow channel inside the diffuser cavity is provided with rounded corners for smooth diffusion of the air flow. The bottom surface diameter of the diffuser cavity is equal to the diameter of the outer flow channel flow regulating plate.

The rotating shaft I upwardly passes through the communication hole of the air intake structure and then passes through the rotating plate I of the rotating seat of the flow regulating mechanism. The diameter of the rotating shaft I is equal to the diameter of the communication hole.

The annular shunt cavity structure is in the shape of a disk, and the upper part of the annular shunt cavity structure disk-shaped extends radially and is fixedly connected with the lower end surface of the outer edge of the flow regulating mother board.

The annular shunt cavity structure is provided with a columnar shunt cavity that communicates with the annular shunt cavity structure. The first shunt plate and the second stage shunt plate are arranged at intervals from top to bottom in the shunt cavity. The cavity is divided into three layers from top to bottom that communicate with each other; the diameters of the first-level distribution plate and the second-level distribution plate are equal to the inner diameter of the distribution chamber.

There are also two cylinders arranged at intervals and concentric with the shunt cavity, and the two cylinders divide the shunt cavity into three mutually disjoint spaced regions distributed from the center to the radial direction, namely cylinders in sequence. The height of the two cylinders is equal to or greater than the height of the shunt cavity.

The upper end face of a cylinder close to the center of the shunt chamber is located on the lower end face of the inner edge of the flow regulating mother plate, and the upper end face of a cylinder far from the center of the shunt chamber is located on the outer flow passage inlet hole and the middle flow passage of the flow regulating mother plate. The lower end face of the spaced area between the air intake holes.

The air inlet holes of the inner flow passage of the flow regulating mother plate are connected with the central interval area of the shunt cavity, the air inlet holes of each middle flow passage of the flow regulating mother plate are communicated with the middle interval area of the shunt cavity, and the air inlet holes of each outer flow passage of the flow regulating mother plate are connected with each other. The orifice communicates with the outer spacer region of the shunt chamber.

The cavity in the central interval area on the upper side of the first-stage shunt plate is an inner flow channel, and the inner runner is connected to the air inlet holes of the inner runner; The air inlet hole of the middle flow channel; the cavity of the outer interval area on the upper side of the first-stage flow divider plate is the outer flow channel, and the outer flow channel is connected with the air inlet holes of each outer flow channel.

The process gas is introduced into the gas inlet structure of the gas inlet device, and finally flows out from the annular shunt cavity structure to carry out the silicon epitaxial growth reaction.

A number of first-level distribution holes are evenly spaced on the first-level distribution plate, and a number of second-level distribution holes are evenly spaced on the second-level distribution plate; the diameter of the first-level distribution holes is larger than that of the second-level distribution holes; The number of pores is smaller than the number of secondary shunt pores, that is, the distribution of secondary shunt pores is denser and the pore size is smaller.

The beneficial effects of the present invention are:

The invention provides a vertical silicon epitaxial reaction chamber air intake device with adjustable flow. The air intake structure adopts tangential air intake and is provided with a conical diffuser structure; the annular shunt chamber adopts a two-stage shunt design, and the inner flow channel adopts a circular shape. Cylindrical design, the middle flow channel and the outer flow channel are annular design; the flow regulating mechanism controls the flow rate by rotating the flow regulating plate to adjust the opening and closing area of the outer flow channel and the middle flow channel inlet hole on the mother board. The gain effect is that different process gases can be mixed evenly in the intake structure and then fully diffused, and the intake flow rate of the outer flow channel and the inner flow channel can be adjusted independently by the flow adjustment mechanism, and the flow ratio between different flow channels can be changed. To effectively control the concentration distribution of the process gas above different radial positions of the silicon wafer substrate, thereby effectively improving the thickness uniformity of the silicon wafer epitaxial layer.

Description of drawings

Fig. 1 is the exploded view of the general assembly of the present invention;

Fig. 2 is the exploded view of the flow regulating mechanism of the present invention;

3 is an enlarged exploded view of the rotating base, the rotating plate I, and the rotating plate II in the flow regulating mechanism of the present invention;

(a) of FIG. 4 is a top view of the air intake structure of the present invention;

(b) of FIG. 4 is a cross-sectional view of the air intake structure of the present invention;

(a) of FIG. 5 is a top view of the annular shunt cavity structure of the present invention;

(b) of FIG. 5 is a cross-sectional view of the annular shunt cavity structure of the present invention;

6 is a schematic diagram of the outer flow channel flow regulating plate of the present invention for adjusting the air intake flow rate of the outer flow channel;

7 is a schematic diagram of the flow channel intake flow rate in the flow channel flow adjustment plate in the present invention;

In the figure: 1. Air intake structure, 2. Support ring, 3. Annular shunt cavity structure, 4. Flow adjustment mechanism, 10. Magnetic fluid sealing device, 11. Inner flow channel communication hole, 12, Outer flow channel flow regulating plate, 13. Middle runner communication groove, 14. Outer runner flow regulating hole, 15. Middle runner flow regulating plate, 16. Outer runner communication slot, 17. Middle runner flow regulating hole, 18. Flow regulating motherboard, 19. Outer runner inlet Air hole, 20, air inlet hole in middle runner, 21, air inlet hole in inner runner, 22, connecting hole in inner runner, 23, rotating shaft II, 24, rotating shaft I, 25, rotating base, 26, rotating plate I, 27, rotating plate II, 43, tangential intake flow channel, 45, mixing chamber, 46, expansion hole, 47, diffusion chamber, 48, communication hole, 49, conical expansion structure, 51, rotating plate II Rotating Slider, 52, Rotating Plate II Locking Hole, 53, Rotating Plate I Locking Slot, 54, Rotating Plate I Rotating Slider, 55, Rotating Plate I Locking Hole, 56, Rotating Base Locking Slot, 57 , Rotating base rotating groove, 58, rotating plate I rotating groove, 61, inner flow channel, 62, middle flow channel, 63, outer flow channel, 64, primary shunt hole, 65, secondary shunt hole, 66, primary shunt plate, 67, secondary manifold.

Detailed ways

The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

As shown in FIG. 1, the air intake device of the present invention includes an air intake structure 1, a support ring 2, an annular shunt cavity structure 3 and a flow adjustment mechanism 4; the air intake structure 1 and the support ring 2 are installed in the middle of the flow adjustment mechanism 4, and the flow adjustment mechanism The mechanism 4 is installed on the upper end face of the annular shunt cavity structure 3; the air intake structure 1, the annular shunt cavity structure 3 and the flow regulating mechanism 4 are communicated in sequence. The flow adjustment mechanism 4 includes a rotating seat and an adjustment plate layer. The rotating seat, the air intake structure 1, the adjustment plate layer and the annular shunt cavity structure 3 are coaxially connected in sequence from top to bottom; the air intake structure 1 and the adjustment plate layer are supported by Ring 2 connection.

As shown in Figures 2 and 3, the rotating seat of the flow regulating mechanism 4 includes a rotating plate II27, a rotating plate I26 and a rotating base 25 that are coaxially stacked in sequence from top to bottom; the rotating plate II27 can rotate around its own axis during rotation Rotate on the upper end surface of the rotating plate I26; the rotating plate I26 can rotate around its own axis on the upper end surface of the rotating base 25 when it rotates.

The two opposite sides of the outer peripheral bottom edge of the rotating plate II27 are provided with rotating plate II rotating sliders 51 in the axial direction, and the two rotating plate II rotating sliders 51 are both provided with rotating plate II locks along the radial direction of the rotating plate II27 Tight hole 52; The symmetrical sides of the upper end face of the rotating plate I26 are provided with two fan-shaped rotating plate I rotating grooves 58, and the outer peripheral side surfaces of the rotating plate I26 below the two rotating plate I rotating grooves 58 are respectively provided with fan-shaped annular grooves. Rotating plate I locking groove 53; each rotating plate I locking groove 53 is communicated with a corresponding one rotating plate I rotating groove 58 respectively; each rotating plate II rotating slider 51 is slid down and installed on a rotating plate I to rotate In the groove 58, the rotating plate II locking hole 52 of the rotating plate II rotating slider 51 faces the rotating plate I locking groove 53, and the rotating plate II rotating slider 51 can only rotate in the circumferential direction in the rotating plate I rotating groove 58. .

When the rotating plate II rotating slider 51 rotates to the designated position, the rotating plate II locking hole 52 is limited to the designated position in the rotating plate I locking groove 53 by the set screw passing through the rotating plate I locking groove 53 .

The opposite sides of the bottom edge of the outer periphery of the rotating plate I26 are provided with the rotating plate I rotating slider 54 in the axial direction, and the two rotating plate I rotating sliders 54 are provided with the rotating plate I lock along the radial direction of the rotating plate I26. The tightening hole 55; the rotating base 25 is cylindrical, and two fan-shaped rotating base rotating grooves 57 are provided on the symmetrical sides of the upper end face of the rotating base 25, and the rotating base below the two rotating base rotating grooves 57 The outer peripheral side of the seat 25 is respectively provided with a fan-shaped rotating base locking groove 56, and each rotating plate I locking groove 53 is communicated with a corresponding one rotating plate I rotating groove 58; each rotating plate I rotating slider 54 They are respectively slid down and installed in a rotating base rotating groove 57, the rotating plate I locking hole 55 of the rotating plate I rotating slider 54 is facing the rotating base locking groove 56, and the rotating plate I rotating slider 54 can only be The rotating base rotates in the circumferential direction in the rotating groove 57 .

When the rotary slider 54 of the rotary plate I rotates to the designated position, the locking hole 55 of the rotary plate I is limited to the designated position in the locking groove 56 of the rotary base by the set screw passing through the locking groove 56 of the rotary base. .

A rotating bar for driving the rotating plate II27 and the rotating plate I26 to rotate is provided at the same position on the outer peripheral side of the rotating plate II27 and the rotating plate I26.

As shown in FIG. 2 , the adjustment plate layer of the flow adjustment mechanism 4 includes an outer flow channel flow adjustment plate 12 , a middle flow channel flow adjustment plate 15 and a flow adjustment mother plate 18 which are coaxially stacked from top to bottom and communicated with each other.

The outer runner flow regulating plate 12 includes two concentric outer runner rings, the two outer runner rings are connected by a plurality of rib plates, and an outer runner ring on the outer side of the outer runner flow regulating plate 12 is evenly spaced along the circumferential direction A number of outer flow channel flow adjustment holes 14 are opened.

The middle channel flow regulating plate 15 includes two concentric middle channel rings, the two middle channel rings are connected by a plurality of rib plates, and a middle channel ring on the inner side of the middle channel flow regulating plate 15 is uniform along the circumferential direction. A plurality of flow regulating holes 17 are arranged at intervals.

The flow regulating mother plate 18 is annular, the inner side of the annular surface of the flow regulating mother plate 18 is evenly spaced along the circumferential direction with a number of outer runner air inlet holes 19, and the outer side of the annular surface of the flow regulating mother plate 18 is evenly spaced along the circumferential direction A number of air inlet holes 20 in the middle flow channel are opened.

The annular gap formed between the two outer flow channel rings of the outer channel flow regulating plate 12 is the middle channel communication groove 13 , and the central through hole of the outer channel ring inside the outer channel flow regulating plate 12 is the inner channel communication hole 11 The annular gap formed between the two middle flow passage rings of the middle flow passage flow regulating plate 15 is the outer flow passage communication groove 16, and the central through hole of a middle flow passage ring on the inner side of the middle flow passage flow regulating plate 15 is the inner flow passage communication hole 22; The central through hole of the flow regulating motherboard 18 is the air inlet hole 21 of the inner flow channel.

The inner flow channel communication hole 11, the inner flow channel communication hole 22 and the inner flow channel air inlet hole 21 are connected in sequence and have the same diameter; the middle flow channel communication groove 13, each middle flow channel flow adjustment hole 17 and each middle flow channel air inlet hole 20 are from the top And the bottom is facing and connected in turn; each outer flow channel flow adjustment hole 14, outer flow channel communication groove 16 and each outer flow channel air inlet hole 19 are facing and connected in turn from top to bottom; each middle flow channel flow adjustment hole 17 is facing one The air inlet hole 20 in the middle flow channel; each outer flow channel flow adjustment hole 14 is facing a respective outer flow channel air inlet hole 19 .

The diameter of the outer flow channel air inlet hole 19 of the flow adjustment motherboard 18 is equal to the diameter of the outer flow channel flow adjustment hole 14 of the outer flow channel flow adjustment plate 12; The hole diameter of the flow regulating hole 17 in the middle flow channel of the plate 15;

The ring width of the middle channel communication groove 13 of the outer channel flow regulating plate 12 is equal to the aperture of the middle channel air inlet 20 of the flow regulating mother plate 18; the ring width of the outer channel communication groove 16 of the middle channel flow regulating plate 15 is equal to the flow regulating mother plate. The hole diameter of the outer runner air inlet hole 19 of the plate 18.

The number of the outer runner air inlet holes 19 of the flow regulating motherboard 18 is equal to the number of the outer runner flow regulating holes 14 of the outer runner flow regulating plate 12; The number of flow adjustment holes 17 in the middle flow channel of the plate 15 ;

The center of the outer channel flow regulating plate 12 is provided with an upward tubular rotating shaft I24; the center of the middle channel flow regulating plate 15 is upwardly provided with a rotating axis II23, the outer diameter of the rotating axis II23 is equal to the inner diameter of the rotating axis I24.

The rotating shaft II23 passes through the center of the rotating shaft I24 and passes upward through the rotating seat of the flow regulating mechanism 4, and is then fixedly connected to the center of the rotating plate II27; the rotating shaft I24 passes upward through the rotating seat of the flow regulating mechanism 4, and then is fixedly connected To the center of the rotating plate I26; the outer side of the rotating shaft I24 is sheathed with a magnetic fluid sealing device 10 for sealing.

When the rotating plate II27 rotates, it drives the rotating shaft II23 and the flow adjustment plate 15 of the middle flow channel to rotate around its own axis, so that the communication area between the flow adjustment hole 17 of the middle flow channel and the air inlet hole 20 of the middle flow channel is changed, so as to adjust the flow channel of the middle flow channel. 62 The effect of intake air flow.

When the rotating plate I26 rotates, it drives the rotating shaft I24 and the outer flow channel flow adjustment plate 12 to rotate around its own axis, so that the communication area between the opposite outer flow channel flow adjustment hole 14 and the outer flow channel air intake hole 19 is changed to adjust the outer flow channel. 63 The effect of intake air flow.

The diameter of the outer channel flow regulating plate 12 and the middle channel flow regulating plate 15 is the same, the diameter of the flow regulating mother plate 18 is larger than that of the middle channel flow regulating plate 15; the inner diameter of the support ring 2 is equal to the diameter of the middle channel flow regulating plate 15, and the support The thickness of the ring 2 is equal to the sum of the thicknesses of the outer runner flow regulating plate 12 and the middle runner flow regulating plate 15 .

The support ring 2 is sleeved on the outer side of the outer flow channel flow regulating plate 12 and the middle flow channel flow regulating plate 15. The upper and lower end faces of the supporting ring 2 are welded with the air intake structure 1 and the flow regulating motherboard 18 respectively. 12 and the flow adjustment plate 15 of the middle flow channel are sealed between the air intake structure 1 and the flow adjustment mother plate 18 . The support ring 2 does not block the through holes of the air intake structure 1 and the flow regulating motherboard 18 .

As shown in a and b of Figure 4, the air intake structure 1 is disc-shaped, and the bottom of the disc-shaped air intake structure 1 extends radially outward and is fixed to the upper end surface of the support ring 2; There is an axial communication hole 48, and the interior of the air intake structure 1 is provided with a mixing cavity 45, a dilation hole 46 and a diffusion cavity 47 which are sequentially communicated from top to bottom; the communication hole 48 is not communicated with the mixing cavity 45, and the diffusion cavity 47 passes through Air intake structure 1, to assist airflow diffusion.

The center top surface of the mixing chamber 45 faces downward to form a conical conical diffuser structure 49, and the center of the outer top surface of the conical diffuser structure 49 is connected to the communication hole 48; The tangential inlet flow channel 43 connected by the gas pipeline is used for introducing process gas and mixing; the expansion hole 46 is a conical cavity, and the diameter of the top surface of the conical shape is smaller than the diameter of the mixing cavity 45; the expansion hole 46 and the diffuser The junctions of the cavities 47 are larger rounded corners.

The diffuser cavity 47 is a downward trumpet-shaped cavity. Each transition of the flow channel inside the diffuser cavity 47 is provided with rounded corners for smooth diffusion of the air flow.

The rotating shaft I24 passes upward through the communication hole 48 of the air intake structure 1 and then passes through the rotating plate I26 of the rotating seat of the flow regulating mechanism 4 . The diameter of the rotating shaft I24 is equal to the diameter of the communication hole 48 .

As shown in a and b of FIG. 5 , the annular shunt cavity structure 3 is disc-shaped, and the upper part of the annular shunt cavity structure 3 disk-shaped extends radially and is fixedly connected with the lower end surface of the outer edge of the flow regulating mother board 18; The annular shunt cavity structure 3 is provided with a cylindrical shunt cavity that communicates with the annular shunt cavity structure 3. The first shunt plate 66 and the second stage shunt plate 67 are arranged in the shunt cavity from top to bottom. The shunt plate 67 divides the shunt cavity into three layers of cavities that communicate with each other from top to bottom; the diameters of the primary shunt plate 66 and the second shunt plate are equal to the diameter of the shunt cavity.

There are also two cylinders arranged at intervals and concentric with the shunt cavity, and the two cylinders divide the shunt cavity into three mutually disjoint spaced regions distributed from the center to the radial direction, namely cylinders in sequence. The height of the two cylinders is equal to or greater than the height of the shunt cavity.

The upper end face of a cylinder close to the center of the shunt chamber is located on the lower end face of the inner edge of the flow regulating mother plate 18 , and the upper end face of a cylinder far from the center of the shunt chamber is located at the outer flow channel inlet hole 19 of the flow regulating mother plate 18 . and the lower end face of the spaced region between the air inlet hole 20 of the middle flow channel.

The inner flow channel air inlet holes 21 of the flow regulating mother board 18 are communicated with the central interval area of the shunt cavity, and each middle flow channel air inlet hole 20 of the flow regulating mother board 18 is communicated with the middle interval area of the shunt cavity. Each of the outer runner air inlet holes 19 communicates with the outer spaced area of the shunt cavity.

The cavity in the central interval area on the upper side of the first-stage flow divider plate 66 is the inner flow channel 61, and the inner flow channel 61 is connected to the inner flow channel air inlet 21; 62, the middle flow channel 62 communicates with each of the middle flow channel air inlet holes 20;

A number of primary shunt holes 64 are evenly spaced on the primary shunt plate 66, and a number of secondary shunt holes 65 are evenly spaced on the secondary shunt plate 67; The number of the primary shunt holes 64 is smaller than the number of the secondary shunt holes 65 , that is, the secondary shunt holes 65 are more densely distributed and have smaller pore diameters.

The process gas is introduced into the gas inlet structure 1 of the gas inlet device, and finally flows out from the annular shunt cavity structure 3 to carry out the silicon epitaxial growth reaction.

The specific implementation process is as follows:

As shown in Fig. 6 and Fig. 7, the rotating plate II27 and the rotating plate I26 are rotated around their own axes by turning the rotating bars of the rotating plate II27 and the rotating plate I26; the rotating plate II27 rotates to drive the rotating shaft II23 and the flow regulating plate 15 Rotate around its own axis, so that the communication area between the opposite middle flow channel flow adjustment hole 17 and the middle flow channel air inlet hole 20 is changed, and the air intake flow of the middle flow channel 62 can be adjusted; The smaller the area, the smaller the intake air flow; the rotation of the rotating plate I26 drives the rotating shaft I24 and the outer runner flow regulating plate 12 to rotate around its own axis, so that the outer runner flow regulating hole 14 and the outer runner air inlet hole 19 are facing each other. The change of the communication area can adjust the intake flow of the outer channel 63; when the rotating plate II27 and the rotating plate I26 are rotated to their respective designated angles, lock the rotating plate II27 and the rotating plate I26 without moving, that is, the flow adjustment process is completed.

After the flow adjustment process is completed, the process gas is introduced into the tangential intake flow channels 43 of the mixing chamber 45 of the intake structure 1 that communicate with the external pipelines. In the specific implementation, three tangential intake flow channels 43 can be opened. The gas can be carrier gas hydrogen, silicon source, doping gas, etc.; the process gas is uniformly mixed in the mixing chamber 45 of the gas inlet structure 1 and then flows into the diffusion chamber 47 through the conical diffusion structure 49 and the diffusion hole 46 in turn , and then pass through the outer flow channel flow regulating plate 12, the middle flow channel flow regulating plate 15 and the flow regulating mother plate 18 in turn to the flow distribution cavity of the annular flow distribution cavity structure 3, and pass through the first stage flow distribution plate 66 and the second flow distribution cavity of the annular flow distribution cavity structure 3 in turn. After the two-stage shunting is performed on the stage shunt plate 67 , a uniform vertical gas flow is formed to flow to the outside of the annular shunt cavity structure 3 , the silicon epitaxial growth process is performed, and an epitaxial layer is formed.

Feedback adjustment is performed by detecting the thickness uniformity of the epitaxial layer after epitaxial growth. If the thickness uniformity does not reach the expected result, the flow adjustment process is performed again and the process gas is introduced for re-detection until the detection reaches the expected result. The flow ratio of the flow channel 61 , the middle flow channel 62 and the outer flow channel 63 flows out of the annular shunt cavity structure 3 , so as to obtain more suitable process parameters for silicon epitaxial growth, and perform subsequent silicon epitaxial wafer production.

The above-mentioned specific embodiments are used to explain the present invention, rather than limit the present invention. Within the spirit of the present invention and the protection scope of the claims, that is, equivalent changes and modifications made according to the protection scope of the present invention and the contents of the description, all should fall within the protection scope of the present invention.

Claims (10)

1. The utility model provides a vertical silicon epitaxial reaction chamber air inlet unit with adjustable flow which characterized in that:

the device comprises an air inlet structure (1), a support ring (2), an annular flow distribution cavity structure (3) and a flow regulating mechanism (4); the air inlet structure (1) and the support ring (2) are arranged in the middle of the flow regulating mechanism (4), and the flow regulating mechanism (4) is arranged on the upper end surface of the annular shunting cavity structure (3); the air inlet structure (1), the annular diversion cavity structure (3) and the flow regulating mechanism (4) are communicated in sequence;

the flow regulating mechanism (4) comprises a rotating seat and a regulating plate layer, and the rotating seat, the air inlet structure (1), the regulating plate layer and the annular shunting cavity structure (3) are sequentially and coaxially connected from top to bottom; the air inlet structure (1) is connected with the adjusting plate layer through the support ring (2).

2. A flow-adjustable vertical silicon epitaxial reactor gas inlet device according to claim 1, characterized in that:

the rotating seat of the flow regulating mechanism (4) comprises a rotating plate II (27), a rotating plate I (26) and a rotating base (25) which are coaxially arranged in a stacked manner from top to bottom in sequence;

the rotating plate II (27) rotates around the axis of the rotating plate II to rotate on the upper end face of the rotating plate I (26); the rotating plate I (26) rotates around its axis on the upper end surface of the rotating base (25) when rotating.

3. A flow-adjustable vertical silicon epitaxial reactor gas inlet apparatus according to claim 2, characterized in that:

the adjusting plate layer of the flow adjusting mechanism (4) comprises an outer flow channel flow adjusting plate (12), a middle flow channel flow adjusting plate (15) and a flow adjusting mother plate (18) which are coaxially arranged in a stacked mode from top to bottom and are communicated with one another;

the outer flow channel flow adjusting plate (12) comprises two concentric outer flow channel rings, the two outer flow channel rings are connected through a plurality of rib plates, and a plurality of outer flow channel flow adjusting holes (14) are uniformly arranged on one outer flow channel ring on the outer side of the outer flow channel flow adjusting plate (12) at intervals along the circumferential direction;

the middle runner flow adjusting plate (15) comprises two concentric middle runner rings, the two middle runner rings are connected through a plurality of rib plates, and a plurality of middle runner flow adjusting holes (17) are uniformly arranged on one middle runner ring on the inner side of the middle runner flow adjusting plate (15) at intervals along the circumferential direction;

the flow rate adjusting mother board (18) is in a circular ring shape, a plurality of outer flow channel air inlets (19) are uniformly arranged on the inner side of the ring surface of the flow rate adjusting mother board (18) at intervals along the circumferential direction, and a plurality of middle flow channel air inlets (20) are uniformly arranged on the outer side of the ring surface of the flow rate adjusting mother board (18) at intervals along the circumferential direction.

4. A flow-adjustable vertical silicon epitaxial reactor gas inlet apparatus according to claim 3, wherein:

an annular gap formed between two outer runner circular rings of the outer runner flow adjusting plate (12) is a middle runner communicating groove (13), and a central through hole of one outer runner circular ring on the inner side of the outer runner flow adjusting plate (12) is an inner runner communicating hole (11); an annular gap formed between two middle runner circular rings of the middle runner flow adjusting plate (15) is an outer runner communicating groove (16), and a central through hole of one middle runner circular ring on the inner side of the middle runner flow adjusting plate (15) is an inner runner communicating hole (22); the central through hole of the flow regulating mother board (18) is an inner flow passage air inlet hole (21);

the inner flow passage communication hole (11), the inner flow passage communication hole (22) and the inner flow passage air inlet hole (21) are communicated in sequence and have the same diameter; the middle flow passage communicating groove (13), each middle flow passage flow regulating hole (17) and each middle flow passage air inlet hole (20) are sequentially opposite to and communicated with each other from top to bottom; each outer flow channel flow regulating hole (14), each outer flow channel communicating groove (16) and each outer flow channel air inlet hole (19) are sequentially opposite and communicated from top to bottom;

each middle runner flow adjusting hole (17) is opposite to one middle runner air inlet hole (20); each outer flow channel flow regulating hole (14) is opposite to each outer flow channel air inlet hole (19).

5. A flow-adjustable vertical silicon epitaxial reactor gas inlet device according to claim 4, characterized in that:

the aperture of an outer flow channel air inlet hole (19) of the flow regulating mother board (18) is equal to the aperture of an outer flow channel flow regulating hole (14) of the outer flow channel flow regulating board (12); the aperture of a middle runner air inlet hole (20) of the flow adjusting mother board (18) is equal to the aperture of a middle runner flow adjusting hole (17) of the middle runner flow adjusting board (15); the aperture of an outer flow channel air inlet hole (19) of the flow regulating mother plate (18) is smaller than that of an intermediate flow channel air inlet hole (20);

the ring width of a middle flow passage communicating groove (13) of the outer flow passage flow adjusting plate (12) is equal to the aperture of a middle flow passage air inlet hole (20) of a flow adjusting mother plate (18); the ring width of an outer flow channel communicating groove (16) of the middle flow channel flow adjusting plate (15) is equal to the aperture of an outer flow channel air inlet hole (19) of a flow adjusting mother plate (18);

the number of the outer flow channel air inlets (19) of the flow regulating mother board (18) is equal to the number of the outer flow channel flow regulating holes (14) of the outer flow channel flow regulating board (12); the number of the middle runner air inlet holes (20) of the flow adjusting mother plate (18) is equal to the number of the middle runner flow adjusting holes (17) of the middle runner flow adjusting plate (15); the number of the outer flow passage air inlet holes (19) is larger than that of the middle flow passage air inlet holes (20).

6. A flow-adjustable vertical silicon epitaxial reactor gas inlet device according to claim 4, characterized in that:

an upward tubular rotating shaft I (24) is arranged at the center of the outer flow passage flow adjusting plate (12); a rotating shaft II (23) is arranged upwards in the center of the middle flow channel flow adjusting plate (15);

the rotating shaft II (23) penetrates through the center of the rotating shaft I (24) and upwards penetrates through the rotating seat of the flow regulating mechanism (4), and then is fixedly connected to the center of the rotating plate II (27); the rotating shaft I (24) upwards penetrates through a rotating seat of the flow regulating mechanism (4) and is further fixedly connected to the center of the rotating plate I (26);

when the rotating plate II (27) rotates, the rotating shaft II (23) and the middle runner flow adjusting plate (15) are driven to rotate around the axis of the rotating shaft II, so that the communication area between the middle runner flow adjusting hole (17) and the middle runner air inlet hole (20) which are opposite to each other is changed;

when the rotating plate I (26) rotates, the rotating shaft I (24) and the outer flow passage flow adjusting plate (12) are driven to rotate around the axis of the rotating shaft I and the outer flow passage flow adjusting plate, so that the communication area between the outer flow passage flow adjusting hole (14) and the outer flow passage air inlet hole (19) which are opposite to each other is changed.

7. A flow-rate-adjustable vertical silicon epitaxial reactor gas inlet device according to claim 3, characterized in that:

the diameters of the outer flow regulating plate (12) and the middle flow regulating plate (15) are the same, and the diameter of the flow regulating mother plate (18) is larger than that of the middle flow regulating plate (15);

the inner diameter of the support ring (2) is equal to the diameter of the middle flow passage flow adjusting plate (15), and the thickness of the support ring (2) is equal to the sum of the thicknesses of the outer flow passage flow adjusting plate (12) and the middle flow passage flow adjusting plate (15);

the support ring (2) is sleeved on the outer side surface of the outer runner flow adjusting plate (12) and the middle runner flow adjusting plate (15), the upper end surface and the lower end surface of the support ring (2) are respectively welded with the air inlet structure (1) and the flow adjusting mother plate (18), and the outer runner flow adjusting plate (12) and the middle runner flow adjusting plate (15) are sealed between the air inlet structure (1) and the flow adjusting mother plate (18).

8. A flow-adjustable vertical silicon epitaxial reactor gas inlet device according to claim 6, characterized in that:

the air inlet structure (1) is disc-shaped, and the disc-shaped bottom of the air inlet structure (1) extends outwards in the radial direction and is fixedly connected with the upper end face of the support ring (2); an axial communication hole (48) is formed in the center of the air inlet structure (1), and a mixing cavity (45), a flow expansion hole (46) and a diffusion cavity (47) which are sequentially communicated from top to bottom are formed in the air inlet structure (1); the communicating hole (48) is not communicated with the mixing cavity (45), and the diffusion cavity (47) is communicated with the air inlet structure (1);

the top surface of the center of the mixing cavity (45) is downward to form a conical flow expansion structure (49), and a plurality of tangential air inlet channels (43) connected with an external air pipeline are uniformly arranged on the side wall of the mixing cavity (45) at intervals; the flow expansion hole (46) is a circular truncated cone-shaped cavity, and the diameter of the circular truncated cone-shaped top surface is smaller than that of the mixing cavity (45);

the diffusion cavity (47) is a downward horn-shaped cavity, and the diameter of the bottom surface of the diffusion cavity (47) is equal to that of the outer flow channel flow adjusting plate (12);

the rotating shaft I (24) penetrates through the communicating hole (48) of the air inlet structure (1) upwards and then penetrates through the rotating plate I (26) of the rotating seat of the flow regulating mechanism (4).

9. A flow-rate-adjustable vertical silicon epitaxial reactor gas inlet device according to claim 3, characterized in that:

the annular shunting cavity structure (3) is disc-shaped, and the disc-shaped upper part of the annular shunting cavity structure (3) extends towards the radial direction and is fixedly connected with the lower end face of the outer edge of the flow regulating mother plate (18);

a columnar shunting cavity communicated with the annular shunting cavity structure (3) is formed in the annular shunting cavity structure (3), a first-stage shunting plate (66) and a second-stage shunting plate (67) which are arranged at intervals from top to bottom are arranged in the shunting cavity, and the shunting cavity is divided into three layers of cavities which are communicated with each other from top to bottom by the first-stage shunting plate (66) and the second-stage shunting plate (67); the diameters of the first-stage splitter plate (66) and the second-stage splitter plate (67) are equal to the inner diameter of the splitter cavity;

the two cylinders divide the shunting cavity into three non-communicated spacing regions which are radially distributed from the center to the outside, namely a cylindrical central spacing region, a circular middle spacing region and a circular outer spacing region in sequence; the heights of the two cylinders are equal to the height of the diversion cavity;

the upper end surface of a cylinder close to the circle center of the diversion cavity is positioned on the lower end surface of the inner edge of the flow regulating mother plate (18), and the upper end surface of a cylinder far away from the circle center of the diversion cavity is positioned on the lower end surface of a spacing area between an outer runner air inlet hole (19) and a middle runner air inlet hole (20) of the flow regulating mother plate (18);

an inner runner air inlet hole (21) of the flow regulating mother plate (18) is communicated with a central spacing area of the shunting cavity, each middle runner air inlet hole (20) of the flow regulating mother plate (18) is communicated with a middle spacing area of the shunting cavity, and each outer runner air inlet hole (19) of the flow regulating mother plate (18) is communicated with an outer spacing area of the shunting cavity;

and (3) introducing gas into the gas inlet structure (1) of the gas inlet device, and finally flowing out of the annular shunting cavity structure (3) to perform silicon epitaxial growth reaction.

10. A flow-adjustable vertical silicon epitaxial reactor gas inlet apparatus according to claim 9, wherein:

a plurality of first-stage shunting holes (64) are uniformly formed in the first-stage shunting plate (66) at intervals, and a plurality of second-stage shunting holes (65) are uniformly formed in the second-stage shunting plate (67) at intervals; the aperture of the first-stage shunting hole (64) is larger than that of the second-stage shunting hole (65); the number of the first-stage shunting holes (64) is less than that of the second-stage shunting holes (65).

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