CN114772545A - Fabrication method, processing device and electronic device of micro-nano layer structure - Google Patents

Abstract

The embodiment of the application provides a manufacturing method of a micro-nano layer structure, a processing device and an electronic device, wherein the manufacturing method comprises the steps of providing a mask piece, wherein the mask piece comprises a first area and a second area, and the magnetic field intensity of the first area is larger than that of the second area; providing a substrate, wherein the substrate comprises a matrix and a crude rubber layer, and the crude rubber layer comprises rubber and magnetic particles; the mask piece is opposite to the substrate, a preset distance is reserved between the mask piece and the substrate, and magnetic particles are driven to move by the magnetic force of the first area so that the original glue layer forms a patterned mask layer; the patterned mask layer comprises a mask part and a spacer region, and the substrate is etched by taking the patterned mask layer as a mask so as to form a patterned dielectric layer on the substrate; and removing the residual patterned mask layer on the patterned dielectric layer to form the dielectric layer. Magnetic particles are driven by magnetic force, the mask piece is not in contact with the original adhesive layer, the processing cleanliness is high, the finished product rate is improved, the manufacturing process is simple, and the processing efficiency is improved.

Description

Fabrication method, processing device and electronic device of micro-nano layer structure

technical field

The present application relates to the technical field of patterned electronic device processing, and in particular, to a method for fabricating a micro-nano layer structure, a processing device and an electronic device.

Background technique

Nano-imprinting technology is a new type of micro-nano processing technology. Nano-imprinting technology breaks through the difficulty of traditional lithography in the process of feature size reduction, and has the characteristics of high resolution and low cost. Therefore, it is expected to replace traditional lithography technology in the future and become an important processing method in the fields of electricity, optics and optoelectronics.

At present, nano-imprinting uses an imprint template to imprint on a substrate with an adhesive layer. The imprint template usually has a pattern. After the imprint template directly contacts and squeezes the adhesive layer, the pattern is printed on the adhesive layer. Then, the adhesive layer forming the pattern is cured, and finally the required pattern is formed on the substrate through steps such as etching and peeling.

However, the above-mentioned nano-imprint technology has relatively complicated steps and low processing efficiency, and the imprint template will contaminate the adhesive layer, resulting in lower yield.

SUMMARY OF THE INVENTION

The embodiments of the present application disclose a method for fabricating a micro-nano layer structure, a processing device and an electronic device. During the processing, the mask member does not contact the substrate, thereby preventing the adhesive layer on the substrate from being polluted and improving the yield. Moreover, the processing steps are simple and the efficiency is high.

A first aspect of the embodiments of the present application discloses a method for fabricating a micro-nano layer structure, which includes the following steps:

Step S10 : providing a mask member, the mask member has magnetic permeability or magnetism, the mask member includes a first region and a second region distributed in a staggered manner, and the magnetic field strength of the first region is greater than that of the second region.

Step S11 : providing a substrate, the substrate includes a base and a protocolloid layer disposed on the base, and the protocolloid layer includes a colloid and magnetic particles doped in the colloid. Magnetic particles can be diamagnetic particles or paramagnetic particles.

Step S12: Oppose the mask member to the substrate, and there is a preset distance between the mask member and the substrate, and the magnetic force of the first area drives the magnetic particles corresponding to the first area to move, so that the original glue layer is moved. A patterned mask layer is formed; the patterned mask layer includes a staggered distribution of a mask portion and a spacer, and the magnetic particle density of the mask portion is greater than that of the spacer; one of the mask portion and the spacer is the same as the spacer. The first area corresponds and the other corresponds to the second area. The magnetic force in the first region may be a repulsive force or an adsorption force, wherein when the magnetic particles are diamagnetic particles, the magnetic force is a repulsive force; when the magnetic particles are paramagnetic particles, the magnetic force is an adsorption force.

Step S13 : using the patterned mask layer as a mask, etching the substrate, so that the substrate forms a patterned dielectric layer. Specifically, the mask portion is partially etched, the spacer region is fully etched, and the region corresponding to the base body and the spacer region is etched, so that the base body forms a patterned dielectric layer.

Step S14 : removing the remaining patterned mask layer on the patterned dielectric layer to form a dielectric layer. Specifically, the spacer region is completely etched, and the mask portion is partially etched. Therefore, removing the remaining patterned mask layer on the patterned dielectric layer is actually removing the remaining mask portion on the patterned dielectric layer.

In the manufacturing method of the micro-nano layer structure provided in the embodiment of the present application, in the whole manufacturing process, the mask member is not in contact with the original glue layer, but uses magnetic force to act on the magnetic particles in the original glue layer, so as to perform patterning processing, The mask piece is not in contact with the original glue layer, so the processing cleanliness is high and the yield is improved. In addition, compared with the existing manufacturing method, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, developing, and post-baking, the process is relatively simple, the manufacturing steps are simplified, and the processing efficiency is improved.

In one embodiment, the magnetic particles are diamagnetic particles; the step of driving the magnetic particles corresponding to the first area to move by the magnetic force of the first area includes: the first area generates a repulsive force on the diamagnetic particles, and the repulsive force drives the diamagnetic particles Moving to an area corresponding to the second area to form a mask portion corresponding to the second area, and to form a spacer area corresponding to the first area.

It can be understood that while the first region generates repulsive force to the corresponding diamagnetic particles, although the magnetic field strength of the second region is weak, it may also generate repulsive force to the corresponding diamagnetic particles. The repulsive force generated in the first region is called is the first repulsive force, the repulsive force generated by the second region is called the second repulsive force, and the first repulsive force is greater than the second repulsive force, which can ensure that the first repulsive force can drive the diamagnetic particles to move.

The diamagnetic particles are made of one or more of gold, silver, copper and lead. The diamagnetic particles have the property of escaping from the stronger magnetic field area to the weaker magnetic field area. The magnetic field strength of the first area is greater than that of the second area. Therefore, the diamagnetic particles will move to the area corresponding to the second area. A mask portion and a spacer are formed on the adhesive layer. When the repulsive force in the first region repels the diamagnetic particles, it does not contact the diamagnetic particles and the colloid, so that a convex portion can be formed on the original colloid layer, thereby reducing the contamination rate and improving the yield.

In one embodiment, the magnetic particles are paramagnetic particles; the step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region includes: the first region generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles Moving to an area corresponding to the first area to form a mask portion corresponding to the first area, and to form a spacer corresponding to the second area.

It can be understood that while the first region generates an adsorption force to the corresponding paramagnetic particles, the second region may also generate an adsorption force to the corresponding paramagnetic particles. The adsorption force generated by the first region is called the first adsorption force, and the adsorption force generated by the second region is called the second adsorption force. The first adsorption force is greater than the second adsorption force, which can ensure that the first adsorption force can drive the paramagnetic particles. move.

The paramagnetic particles are made of one or more of triiron tetroxide, iron, cobalt, and nickel. When the paramagnetic particles are located in a magnetic field, they tend to move to a region with a stronger magnetic field. Paramagnetic particles have the property of moving to areas with strong magnetic fields. The magnetic field strength of the first area is greater than that of the second area. Therefore, the paramagnetic particles will move to the area corresponding to the first area, thereby forming a mask and space. Area. When the adsorption force of the first region adsorbs the paramagnetic particles, it does not contact the paramagnetic particles and the colloid, so that a mask portion can be formed on the original colloid layer, thereby reducing the pollution rate and improving the yield.

In one embodiment, the mask portion is a convex portion that protrudes away from the substrate, and the spacer is a concave portion that is concave toward the substrate. The cross-section of the convex portion is a shape whose height gradually decreases from the middle to the two sides, similar to a convex arc. The thickness of the convex portion is greater than the thickness of the concave portion. Thus, during etching, the portion of the base body corresponding to the convex portion is blocked by the convex portion, the concave portion is entirely etched, and the base body corresponding to the concave portion is etched, so that a patterned dielectric layer can be formed. Since the convex part and the concave part are formed without contact with the mask, the precision is high. When the convex part is used as the mask part to etch the substrate, the etching precision and the yield are both high.

In one embodiment, the magnetic induction intensity of the mask member is between 0.1 Tesla and 50 Tesla, and the viscosity of the colloid is between 1 Pascals and 10,000 Pascals. The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member can generate enough repulsive force to the magnetic particles, ensure the smooth formation of the convex portion, and keep the thickness of the convex portion to form a suitable micro-nano after etching. within the structure. To avoid the inappropriate magnetic induction intensity of the mask, resulting in insufficient thickness of the convex part, it may happen that the substrate cannot be processed into a micro-nano structure after subsequent etching; or, if the thickness of the convex part is too thick, subsequent etching may occur. The micro-nano structure is too deep. The viscosity of the colloid of the original rubber layer is in the above-mentioned range, so that the convex portion can be smoothly formed, and the thickness can be kept in the range that can be etched into a pattern. Avoid failure to form the convex part, or even if the convex part is formed, the thickness of the convex part is not suitable.

In one embodiment, the step of driving the magnetic particles corresponding to the first region by the magnetic force of the first region includes: the magnetic force of the first region driving the magnetic particles corresponding to the first region to drive the colloid to move to form the convex portion. The magnetic particle drives the colloid to move, specifically, the diamagnetic particle drives the colloid to move to the area corresponding to the second area, or the paramagnetic particle drives the colloid to move to the area corresponding to the first area. After the colloid moves, protrusions and depressions are formed, which facilitates subsequent etching.

In one embodiment, the mask portion is a magnetic particle gathering portion, and the spacer region is a magnetic particle sparse portion; the magnetic particle density at the magnetic particle gathering portion is greater than the magnetic particle density at the magnetic particle sparse portion. The density of magnetic particles in the mask part is high, but there is no magnetic particle in the spacer area or the density of magnetic particles is low, then the hardness of the mask part will be greater than the hardness of the rest parts. The thickness is reduced less. After all the spacers are etched, and a part of the substrate corresponding to the spacers is etched, there is still a remaining part of the mask portion, so that a patterned dielectric layer can be formed. Since the magnetic particle gathering part and the magnetic particle sparse part are formed without contact with the mask, the precision is high, and the magnetic particle gathering part acts as a mask part, so that both the etching precision and the yield are high.

In one embodiment, the magnetic induction intensity of the mask member is between 0.01 Tesla and 5 Tesla, and the viscosity of the colloid is between 0.001 Pascals and 100 Pascals. The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member has sufficient adsorption force on the magnetic particles, ensure the smooth formation of the mask portion, and can keep the density of the diamagnetic particles in the mask portion at the same level as the etching. In the range of suitable micro-nano structures can be formed later. Avoid the inappropriate magnetic induction intensity of the mask, resulting in insufficient density of inverse magnetic particles at the mask portion, which may result in failure to process the micro-nano structure due to subsequent etching of the substrate; If the diamagnetic particles are too dense, the micro-nano structures etched later may be too deep. The viscosity of the colloid of the original glue layer is within the above-mentioned range, so that the mask portion can be formed smoothly, and the density of the diamagnetic particles can be kept within the range that can be etched into a pattern. To avoid the failure of forming the mask part, or even if the mask part is formed, the density of magnetic particles in the mask part is not appropriate.

In one embodiment, the step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region includes that the magnetic force of the first region drives the magnetic particles corresponding to the first region to move to form a magnetic particle gathering portion. The movement of the magnetic particles may specifically be the movement of diamagnetic particles to the region corresponding to the second region, or the movement of paramagnetic particles to the region corresponding to the first region. After the magnetic particles move, a magnetic particle gathering part and a magnetic particle sparse part will be formed, which facilitates subsequent etching.

In one embodiment, while the first region generates a first magnetic force for the magnetic particles, the second region generates a second magnetic force for the magnetic particles, and the first magnetic force is between 5 times and 200 times the second magnetic force. Thereby, it can be ensured that the first magnetic force is greater than the second magnetic force, so that the first magnetic force can drive the magnetic particles to move.

In an embodiment, the number of mask members is two; the magnetic particles are diamagnetic particles; the mask member is opposed to the substrate, and the magnetic force of the first region drives the magnetic particles corresponding to the first region to move, comprising: The substrate is placed between the two mask members, so that the original glue layer is opposite to one of the mask members, and the base body is opposite to the other one of the mask members; the first repulsive force of the first region of one of the mask members, and the second repulsive force of the first region of the other mask member to drive the diamagnetic particles corresponding to the first region to move.

It can be understood that, for the two mask members located on the upper and lower sides of the substrate, the respective first regions of the two mask members are opposite to each other, and the respective second regions of the two mask members are opposite to each other. The first regions are aligned in the height direction, and the respective second regions of the two mask members are aligned in the height direction. Both the first repulsive force and the second repulsive force act on the diamagnetic particles, which can accelerate the escape of the diamagnetic particles to the region corresponding to the second region, thereby accelerating the formation of the mask portion and improving the production efficiency.

In one embodiment, the thickness of the first region is greater than the thickness of the second region, so that the magnetic field strength of the first region is greater than that of the second region. Using the difference in thickness between the first region and the second region, the magnetic field strength of the first region and the second region is different, and the difference in the magnetic field strength is used to adsorb or repel the magnetic particles, thereby forming a mask portion, and the structure of the mask member is relatively simple , the processing is convenient and the cost is low.

In one embodiment, the mask member includes a layered mask plate and an electromagnetic member, and the mask plate is made of soft magnetic material; the first region and the second region are formed on the mask plate, and the first region and the second region are formed on the mask plate. The thicknesses of the regions are equal; the electromagnet includes multiple electromagnets, the multiple electromagnets correspond to the first area, and the pattern formed by the multiple electromagnets is the same as the shape of the first area; so that after the mask plate is magnetized by the electromagnet, The magnetic field strength of the first region is greater than the magnetic field strength of the second region. As a result, the mask plate has a simple structure, is easy to process, and has strong structural strength, and can also ensure smooth forming of the mask portion.

A second aspect of the present application provides an electronic device, comprising: a base layer, a dielectric layer and a functional layer, wherein the dielectric layer and the functional layer are sequentially stacked on the surface of the base layer, and the dielectric layer is made by using any one of the manufacturing methods in the first aspect of the present application . The dielectric layer is fabricated by the above-mentioned fabrication method, and the yield is higher and the cost is lower.

A third aspect of the present application provides a processing device for a micro-nano layer structure, which is used in the manufacturing method of any one of the first aspects of the present application, wherein the processing device includes: a mask member; the mask member has magnetic permeability or magnetic properties , the mask member includes a first area and a second area distributed in a staggered manner, and the magnetic field strength of the first area is greater than that of the second area.

In one embodiment, the thickness of the first region is greater than the thickness of the second region, so that the magnetic field strength of the first region is greater than that of the second region. Using the difference in thickness between the first region and the second region, the magnetic field strength of the first region and the second region is different, and the difference in the magnetic field strength is used to adsorb or repel the magnetic particles, thereby forming a mask portion, and the structure of the mask member is relatively simple , the processing is convenient and the cost is low.

In one embodiment, the mask member has a first surface and a second surface opposite to each other, the mask member includes a plurality of shielding regions and a plurality of hollow regions, the hollow regions penetrate through the first surface and the second surface, and the plurality of shielding regions. The regions are alternately arranged with a plurality of hollow regions, and the pattern formed by the plurality of shielding regions is the same as that of the mask portion, or the pattern formed by the plurality of hollow regions is the same as that of the mask portion. Therefore, the mask member is lighter in weight and smaller in volume.

In one embodiment, the mask member includes a plurality of protrusions and a plurality of concave portions, and a region between any two adjacent concave portions forms a protrusion; the pattern formed by the plurality of protrusions is the same as that of the mask portion, or a plurality of The pattern formed by the recessed portion is the same as that of the mask portion. Therefore, the structural strength of the mask member is strong, and it is not easily deformed, and the service life of the mask member can be prolonged.

In one embodiment, the mask member includes a stacked first plate and a second plate, the second plate has a first surface and a second surface opposite to each other, and the second plate includes a plurality of shielding regions and a plurality of hollow regions, The hollow area runs through the first surface and the second surface, and the area between any two adjacent hollow areas forms a shielding area; the first plate and the second plate are fixedly connected, and the plurality of shielding areas and the first plate form a plurality of protrusions , the plurality of hollow regions and the first plate form a plurality of concave portions; the pattern formed by the plurality of protrusions is the same as that of the mask portion, or the pattern formed by the plurality of concave portions is the same as that of the mask portion. Thereby, processing is facilitated, thereby reducing costs. The first plate is used to enhance the structural strength of the entire mask member, so that the mask member is not easily deformed, thereby prolonging the service life of the mask member.

In one embodiment, the mask member is made of permanent magnets. The permanent magnet itself is magnetic and can generate a magnetic field without external interference; the permanent magnet can be specifically a samarium cobalt magnet, a neodymium iron boron magnet, a ferrite magnet, an alnico magnet or an iron chrome cobalt magnet, etc.; the permanent magnet has relatively stable magnetic properties, It is more convenient to use without external assistance.

In one embodiment, the mask plate includes a layered mask plate and electromagnetic components, the mask plate is made of soft magnets; the mask plate includes a first preparation area and a second preparation area, and the electromagnetic component generates magnetism when the electromagnetic component is energized to generate magnetism. A preparatory area and a second preparatory area are magnetic, the first preparatory area is the first area, and the second preparatory area is the second area. Soft magnets can be made of one or more of pure iron, low carbon steel, silicon steel sheet, permalloy, ferrite, etc. Soft magnets are more flexible in magnetic properties and can cooperate with electromagnets, so that they can be controlled according to actual needs. The magnetic strength and presence or absence of soft magnets have strong applicability.

In one embodiment, the electromagnet includes a plurality of electromagnets, the plurality of electromagnets correspond to the first area, and the pattern formed by the plurality of electromagnets is the same as the shape of the first area. The thickness of the first region is greater than that of the second region, and the combination of the electromagnetic components corresponding to the first region can make the magnetic field strength of the first region significantly greater than that of the second region, so that the first repulsive force is much larger than the second repulsive force, Alternatively, the first adsorption force is far greater than the second adsorption force, so as to increase the formation speed of the mask portion and speed up the production efficiency.

In one embodiment, the electromagnet includes a first group of electromagnets and a second group of electromagnets, the first group of electromagnets corresponds to the first area, and the pattern formed by the first group of electromagnets is the same as the shape of the first area; The two groups of electromagnets correspond to the second area, and the pattern formed by the second group of electromagnets is the same as the shape of the second area. That is to say, a plurality of electromagnets are uniformly stacked above the mask plate, so that the structure of the mask member is relatively simple and easy to manufacture.

In one embodiment, the mask plate includes a layered mask plate and electromagnetic components, and the mask plate is made of soft magnetic material; the mask plate includes a first preparation area and a second preparation area, the first preparation area and the second preparation area are The thickness of the preparatory area is the same; the first preparatory area and the second preparatory area have magnetism when the electromagnet is energized to generate magnetism, the first preparatory area is the first area, and the second preparatory area is the second area; the electromagnet includes a plurality of electromagnets, The plurality of electromagnets correspond to the first area, and the pattern formed by the plurality of electromagnets has the same shape as the first area. That is to say, in this embodiment, the thickness of the mask plate is uniform, and the electromagnetic component corresponds to the first region, so that the magnetic field strength of the first region is greater than that of the second region. As a result, the mask plate has a simple structure, is easy to process, and has strong structural strength, and can also ensure smooth forming of the mask portion.

In the method for fabricating the micro-nano layer structure provided in the embodiment of the present application, the mask member does not contact the original glue layer during the whole fabrication process, but uses magnetic force to adsorb or repel the magnetic particles in the original glue layer, so as to perform patterning processing , the mask piece is not in contact with the original glue layer, so the processing cleanliness is high, and the yield is improved. Non-contact processing can also be applied to smaller size patterns, such as sub-20nm patterns. In addition, compared with the existing manufacturing method, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, developing, and post-baking, the process is relatively simple, the manufacturing steps are simplified, and the processing efficiency is improved.

Description of drawings

The accompanying drawings used in the embodiments of the present application will be introduced below.

FIG. 1 is a schematic cross-sectional view of a part of the structure of an electronic device.

FIG. 2 is a flowchart of a method for fabricating the micro-nano layer structure shown in FIG. 1 .

FIG. 3 is a top view of an embodiment of a mask member of the method for fabricating the micro-nano layer structure shown in FIG. 1 .

FIGS. 3 a to 3 f are schematic side structures of a mask member provided by the method for fabricating the micro-nano layer structure shown in FIG. 3 .

FIG. 4 is a schematic structural diagram of a substrate provided by the method for fabricating the micro-nano layer structure shown in FIG. 2 .

FIGS. 5 a to 5 f are schematic diagrams of the structure of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 .

6a to 6f are schematic diagrams corresponding to the mask member and the substrate shown in Figs. 5a to 5f, and the mask member is used to make the substrate form a mask portion.

7a and 7b are another structural schematic diagram of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 .

FIGS. 8 a and 8 b are schematic diagrams corresponding to the mask members in FIGS. 7 a and 7 b that use a magnetic field to form a mask portion on the substrate.

FIGS. 9 a to 9 f are another structural schematic diagram of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 .

FIGS. 10 a to 10 f are schematic diagrams corresponding to the mask members in FIGS. 9 a to 9 f that use a magnetic field to form a mask portion on the substrate.

FIGS. 11 a and 11 b are still another structural schematic diagrams of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 .

FIGS. 12a and 12b are schematic diagrams corresponding to the mask member in FIGS. 11a and 11b , using a magnetic field to make the substrate form a mask portion.

13a and 13b are another schematic diagram of the structure of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 .

Figures 14a and 14b are schematic views corresponding to the mask member in Figures 13a and 13b using a magnetic field to cause the substrate to form a mask portion.

15a and 15b are another structural schematic diagram of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 .

Figures 16a and 16b are schematic diagrams corresponding to the mask member in Figures 15a and 15b using a magnetic field to form a mask portion on the substrate.

17a is a schematic structural diagram of the patterned mask layer formed in FIGS. 6a to 6f, FIGS. 8a to 8b, and FIGS. 10a to 10f after being etched.

17b is a schematic structural diagram of the patterned mask layer formed in FIGS. 12a to 12b, FIGS. 14a to 14b, and FIGS. 16a to 16b after being etched.

FIG. 18 is a schematic view of the structure of the patterned dielectric layer in FIGS. 17 a and 17 b with the remaining mask portion removed.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

The embodiment of the present application provides an electronic device, the electronic device includes a patterned dielectric layer, and the electronic device can be used for the manufacture of electronic devices in the fields of electricity, optics, and optoelectronics, for example, for the manufacture of semiconductor electronic devices, gratings, and the like. Semiconductor electronic devices such as light-emitting diode (LED), organic light-emitting diode (OLED), thin film transistor or field effect transistor, etc. The above electronic devices are suitable for electronic equipment such as mobile phones, display screens and computers. For example, it is used in mobile phone display. Among them, the conductive circuit layer and the insulating functional layer have nano-scale patterns, which can be called micro-nano layer structure.

Please refer to FIG. 1 and FIG. 2 , FIG. 1 is a schematic cross-sectional view of a partial structure of an electronic device, and FIG. 2 is a flowchart of a method for fabricating the micro-nano layer structure shown in FIG. 1 .

The electronic device 10 in this embodiment includes a base layer 11 , a dielectric layer 12 and a functional layer 13 , and the dielectric layer 12 and the functional layer 13 are sequentially stacked on the surface of the base layer. The base layer 11 may be a glass layer. The dielectric layer 12 may be made of silicon dioxide.

This embodiment is described by taking the fabrication of a light-emitting diode chip as an example. The functional layer 13 has a multi-layer structure, for example, including an N or P-type semiconductor layer, a metal layer, an insulating layer, a light-emitting layer, a stepped layer, and other layer structures. In FIG. 1 of this embodiment, only the dielectric layer 12 is shown, and the functional layer 13 is simply shown.

In other embodiments, the electronic device is a thin film transistor (TFT), which can be applied to an array substrate of a liquid crystal display (LCD) or an organic light-emitting diode display (OLED), and the functional layers are multiple Layer structure, such as including gate, source and drain, channel layers, etc.

The micro-nano layer structure in this embodiment is mainly an insulating dielectric layer 12 . This embodiment provides a method for fabricating a micro-nano layer structure, including the following steps.

Step S10 : providing a mask member, the mask member has magnetic permeability or magnetism, the mask member includes a first region and a second region distributed in a staggered manner, and the magnetic field strength of the first region is greater than that of the second region. Specifically, the mask member includes a plurality of first regions and a plurality of second regions, and a second region is spaced between every two adjacent first regions; that is, the first regions and the second regions are alternately distributed . The magnetic field strength of the first region is greater than the magnetic field strength of the second region, and the minimum magnetic field strength of the second region may be zero. The first area and the second area are used to form a patterned mask layer on the base layer of the electronic device.

Referring to FIG. 3 and FIG. 3a to FIG. 3f, FIG. 3 is a top view of an embodiment of the mask member of the manufacturing method of the micro-nano layer structure shown in FIG. It is the only form of the mask. FIGS. 3 a to 3 f are schematic side structures of a mask member provided by the method for fabricating the micro-nano layer structure shown in FIG. 3 .

Referring to Fig. 3a, in the first embodiment of the present application, the mask member 100 is a thin plate and is a permanent magnet, the permanent magnet itself has magnetism, and can generate a magnetic field without external interference; Magnets, ferrite magnets, AlNiCo magnets or FeCrCo magnets, etc. Permanent magnets are relatively stable in magnetic properties, require no external assistance, and are more convenient to use.

The mask member 100 is in the shape of a thin plate, and includes a first surface 103 and a second surface 104 disposed opposite to each other, and also includes a plurality of hollow areas 105 and a plurality of shielding areas 106 . The plurality of hollow regions 105 penetrate through the first surface 103 and the second surface 104 and are arranged alternately with the plurality of shielding regions 106 . The location forms a shading region 106 . The shielding area 106 is the first area 101 , and the hollow area 105 is the second area 102 . The second region 102 has no magnetic or magnetically conductive material, so the magnetic field strength of the second region 102 is weaker than that of the first region 101 , or even has no magnetic field, so that the magnetic field strength of the first region 101 is greater than that of the second region 102 Magnetic field strength.

In one implementation of the first embodiment, the mask member 100 is non-magnetic and can be magnetically permeable, and the magnetism is transmitted to the mask member through a magnet or an electromagnet. In another embodiment, the mask member 100 is formed by mixing magnetic particles inside the plate body, and the magnetic particles can be permanent magnetic particles;

Referring to FIG. 3b, in the second embodiment of the mask member of the present application, the mask member 200 includes a first surface 201 and a second surface 202, the first surface 201 is recessed toward the second surface 202 with a plurality of recesses 203, and the recesses The protrusions 203 do not penetrate the second surface 202 , a protrusion 204 is formed between two adjacent concave portions 203 , and the protrusions 204 and the concave portions 203 are alternately distributed. In this embodiment, the mask member is a permanent magnet and is integrally formed. Because the thickness of the recess 203 is smaller than that of the protrusion 204 , the magnetic field strength at the recess 203 is weaker than that of the protrusion 204 , so that the magnetic field strength of the first region 101 is greater than that of the second region 102 . By arranging the concave portion 203, the magnetic field intensity can be distinguished, and the space between the bottom wall surface of the concave portion 203 and the second surface 202 can be used as a support for supporting the mask member 200, which can ensure that the mask member 200 has strong structural strength and is not easily deformed. Long service life.

In one embodiment, the mask member 200 includes a first board 210 and a second board 220 that is laminated and fixed with the first board 210 . The first board 210 has no magnetism, and the second board 220 is the same as the mask member of the first embodiment. , which can be permanent magnets or have magnetic permeability. The first plate 210 is used to enhance the strength of the second plate 220, so that the entire mask member 200 is not easily deformed and has a longer service life. After the second board 220 and the first board 210 are stacked and fixed, the structure is the same as that of the second embodiment shown in FIG. 3b. At this time, the mask member 200 specifically includes a concave portion 203 and a protrusion 204, and the protrusion 204 is the first One area 101 and the concave portion 203 are the second area 102 . It is not described in detail here. In other embodiments, the first plate 210 may also be magnetic.

Of course, the mask member 200 in this embodiment may also have no magnetism, and magnetism is generated by external magnetic conduction. In another embodiment, an electromagnet is arranged near the mask member 200, and after the electromagnet is energized, the soft magnetic body can be magnetized, thereby generating a magnetic field. The soft magnet can be made of one or more of pure iron, low carbon steel, silicon steel sheet, permalloy, ferrite, etc. The soft magnet is more flexible in magnetic properties, and the magnetic strength and availability of the soft magnet can be controlled according to actual needs. No, the applicability is strong.

In the third embodiment of the mask member of the present application, the mask member includes a mask plate and an electromagnetic member, the mask plate and the electromagnetic member are stacked and arranged at intervals, and the mask plate includes a first preparation area and a second preparation area, When the electromagnet is energized to generate magnetism, the first preparation area and the second preparation area have magnetism, the first preparation area is the first area, and the second preparation area is the second area. In one embodiment, the first preparatory area includes a plurality of shielding areas, the second preparatory area includes a plurality of hollow areas, the plurality of shielding areas and the plurality of hollow areas are alternately arranged, and the plurality of shielding areas are the plurality of first areas, The plurality of hollow areas are the plurality of second areas. In another embodiment, the first preparatory area includes a plurality of protrusions, the second preparatory area includes a plurality of concave portions, and the plurality of protrusions and the plurality of concave portions are alternately arranged. Each concave portion is the second area.

The mask plate is a soft magnet. The soft magnet itself is not magnetic, but has magnetic permeability. When the soft magnet is in a magnetic field, it can be magnetized to have magnetism. Specifically, the soft magnets are magnetized by exposing them to an electromagnetic field. The structure of the mask plate in this embodiment may be the structure of any of the above-mentioned embodiments.

The electromagnet includes a plurality of electromagnets arranged at intervals, and the plurality of electromagnets at least correspond to the shielding regions. It can also be understood that the patterns formed by the plurality of electromagnets are completely the same as the patterns formed by the shielding regions. The electromagnet also includes a main body (not shown in the figure) that carries a plurality of electromagnets, and the main body can be a plate-shaped, column-shaped or other component capable of carrying the electromagnet.

In one embodiment, electromagnets are provided at the positions of the electromagnets corresponding to the plurality of shielding regions and the plurality of hollowed-out regions, which can be divided into a first group of electromagnets and a second group of electromagnets; wherein, the positions corresponding to the plurality of shielding regions are provided with electromagnets. The electromagnets are called the first group of electromagnets, and the electromagnets corresponding to the plurality of hollow areas are called the second group of electromagnets. The pattern formed by the first group of electromagnets is exactly the same as the pattern formed by the plurality of shielding areas, and the pattern formed by the second group of electromagnets is exactly the same as the pattern formed by the plurality of hollow areas; and the magnetism of the first group of electromagnets is greater than or equal to the first group of electromagnets. The magnetism of two sets of electromagnets. Wherein, a blocking area is a first area, and a hollow area is a second area, that is to say, the number of the first area and the second area is multiple.

The electromagnet includes an electromagnet, the electromagnet includes an iron core and a coil, the iron core is a soft magnetic body, the coil is wound on the iron core, and then the coil is energized to magnetize the iron core, so that the electromagnet is magnetic, thereby generating a magnetic field. The soft magnet can be made of one or more of pure iron, low carbon steel, silicon steel sheet, permalloy, ferrite, etc. The soft magnet is more flexible in magnetic properties, and the magnetic strength and availability of the soft magnet can be controlled according to actual needs. No, the applicability is strong.

Referring to FIG. 3 c , in an implementation manner of the third embodiment, the mask member 300 includes a mask plate 310 and an electromagnetic member 320 , and the mask plate 310 and the electromagnetic member 320 are stacked and arranged at intervals. The mask plate 310 in this embodiment is a soft magnet. The soft magnet itself is not magnetic, but can be magnetized by an electromagnet, and the magnetized soft magnet will generate a magnetic field, thereby generating magnetic force on the magnetic particles. The mask plate 310 includes a plurality of shielding regions 311 and a plurality of hollow regions 312, and the plurality of shielding regions 311 and the plurality of hollow regions 312 are alternately arranged; a shielding region 311 is a first region 101, and a hollow region 312 is a second region The area 102, that is to say, the number of the first area 101 and the second area 102 is also plural.

The electromagnet 320 includes a plurality of electromagnets 321 arranged at intervals. The plurality of electromagnets 321 are divided into a first group of electromagnets 322 and a second group of electromagnets 323. The first group of electromagnets 322 corresponds to the first area 101, and the second group of electromagnets The iron 323 corresponds to the second area 102 . Each electromagnet 321 includes an iron core 324 and a coil 325, the iron core 324 is a soft magnetic body, the coil 325 is wound on the iron core 324, and then the coil 325 is energized to magnetize the iron core 324, so that the electromagnet 321 is magnetic, thereby generate a magnetic field.

An electromagnetic member 320 is arranged above the mask plate 310 and is energized. After the power is turned on, the mask plate 310 is in the electromagnetic field. Because the thickness of the shielding region 311 is larger than that of the hollow region 312, the shielding region 311 is magnetically conductive to generate strong magnetism, and the hollow region The magnetic field 312 is not magnetically conductive, so the magnetic field at the hollow area 312 is weak, thereby forming a difference in magnetic field strength between the first region 101 and the second region 102 on the mask member 300 .

Referring to FIG. 3d, in another implementation manner of the third embodiment, the mask member 400 includes a mask plate 410 and an electromagnetic member 420, and the mask plate 410 and the electromagnetic member 420 are stacked and arranged at intervals. The mask plate 410 is a soft magnetic body, and the mask plate 410 includes a plurality of protrusions 411 and a plurality of recesses 412 , and the plurality of protrusions 411 and the plurality of recesses 412 are alternately arranged. The electromagnet 420 includes a plurality of electromagnets 421 arranged at intervals. Electromagnets 421 are provided at positions of the electromagnet 420 corresponding to the plurality of protrusions 411 and the plurality of recesses 412 , and a plurality of electromagnets 421 corresponding to the plurality of protrusions 411 are provided. The plurality of electromagnets 421 corresponding to the plurality of recesses 412 are referred to as the first group of electromagnets 422 , and the plurality of electromagnets 421 corresponding to the plurality of recesses 412 are referred to as the second group of electromagnets 423 . The pattern formed by the first group of electromagnets 422 is exactly the same as the pattern formed by the plurality of protrusions 411 , the pattern formed by the second group of electromagnets 423 is exactly the same as the pattern formed by the plurality of recesses 412 ; and the magnetic properties of the first group of electromagnets 422 Greater than or equal to the magnetism of the second group of electromagnets 423 . The protrusion 411 is the first area 101 , and the recess 412 is the second area 102 .

The electromagnet 420 includes a plurality of electromagnets 421. The electromagnet 421 includes an iron core 424 and a coil 425. The iron core 424 is a soft magnetic body. The electromagnet 421 is made magnetic to generate a magnetic field.

In yet another implementation of the third embodiment, the mask plate 410 includes a first plate 413 and a second plate 414 laminated and fixed with the first plate 413 , the first plate 413 is non-magnetic, and the second plate 414 is the same as the first plate 414 . The mask member of the example is the same, and it can be a permanent magnet or have a magnetic permeability. The first plate 413 is used to enhance the strength of the second plate 414, is not easily deformed, and has a longer service life. After the second plate 414 and the first plate 413 are stacked and fixed, the structure is the same as that of the above-mentioned embodiment, including the concave portion 412 and the protrusion 411, the convex portion 411 is the first area 101, and the concave portion 412 is the second area 102 . It is not described in detail here.

The electromagnetic member 420 is disposed above the mask plate 410. At this time, the mask plate 410 is in the electromagnetic field, and the thickness of the protrusion 411 is larger than that of the concave portion 412. Therefore, the magnetic force at the concave portion 412 is weak, so that the first magnetic field on the mask member 400 is weak. The first region 101 and the second region 102 form a difference in magnetic field strength.

Referring to FIG. 3e, in another specific implementation of the third embodiment, the mask member 500 includes a mask plate 510 and an electromagnetic member 520, and the mask plate 510 and the electromagnetic member 520 are stacked and arranged at intervals. The mask plate 510 is a soft magnetic body, and the mask plate 510 includes a plurality of shielding regions 511 and a plurality of hollow regions 512 , and the plurality of shielding regions 511 and the plurality of hollow regions 512 are arranged alternately. The electromagnet 520 includes a plurality of electromagnets 521 arranged at intervals, and the plurality of electromagnets 521 correspond to the shielding regions 511 . The electromagnet 520 further includes a main body (not shown) carrying a plurality of electromagnets. Specifically, the plurality of electromagnets are all fixed on the main body. The shielding area 511 forms the first area 101 , and the hollow area 512 forms the second area 102 .

The electromagnet 520 includes a plurality of electromagnets 521. The electromagnet 521 includes an iron core 522 and a coil 523. The iron core 522 is a soft magnetic body. The electromagnet 521 is made magnetic to generate a magnetic field.

In this embodiment, the difference from the mask member shown in FIG. 3c is that only the position corresponding to the shielding area 511 is provided with an electromagnet. That is, there is only one set of electromagnets 521 of the mask member 500 , which corresponds to the shielding area 511 . Therefore, the magnetic field strength of the first region 101 is greater than that of the second region 102 . After the soft magnet is magnetized, the magnetic field strength of the first region 101 is greater than that of the second region 102 ; in addition, there is no magnetic field at the hollow area 512 . Or the existence of the magnetic conductive material (the thickness of the hollow area 512 is smaller than the thickness of the shielding area 511 ), so the magnetic field strength at the hollow area 512 is weaker than that of the shielding area 511 , and the difference in the magnetic field strength between the first area 101 and the second area 102 is increased, The processing of microstructures on electronic devices can be realized more efficiently.

Referring to FIG. 3f , in the fourth embodiment of the mask member, the mask member 600 includes a mask plate 610 and an electromagnetic member 620 , and the mask plate 610 and the electromagnetic member 620 are stacked and arranged at intervals. The mask plate 610 is a soft magnetic body with uniform thickness. The electromagnet 620 includes a plurality of electromagnets 621 arranged at intervals, and the plurality of electromagnets 621 correspond to the first area 101 . It can also be understood that the pattern formed by the plurality of electromagnets 621 is identical to the pattern formed by the plurality of first areas 101 . of. The plurality of electromagnets 621 are energized to make the mask plate 610 magnetic, that is, the position on the mask plate 610 corresponding to the plurality of electromagnets 621 is the first area 101 , and the other positions are the second area 102 , which are staggered. The first area 101 and the second area 102 are alternately arranged.

The mask plate 610 is a thin plate, including a first surface 613 and a second surface 614, both of which are flat. The electromagnet 621 is spaced and opposite to the first surface 613 . A plurality of electromagnets 621 are arranged at intervals, and the pattern formed by the plurality of electromagnets 621 is located in the first area 101 , that is, after the coil is energized, after the mask plate 610 is magnetized at the position in the magnetic field, the position opposite to the electromagnet 621 is magnetized. The area is the first area 101, and the area between the two electromagnets 621 is the second area 102; since the first area 101 is provided with the electromagnet 621 correspondingly, and the second area 102 is not provided with a magnet, therefore The strength of the magnetic field where the first region 101 is located is greater than the strength of the magnetic field where the second region 102 is located.

In this embodiment, the magnetism of the first region 101 and the magnetism of the second region 102 are distributed in a peak-to-valley distribution. Although the second region 102 does not correspond to the electromagnets 621 , there is also magnetism between the two electromagnets 621 . The magnetic field is relatively weak, therefore, the magnetic field of the second region 102 is relatively weak and is located at a trough position, and the magnetic field of the first region 101 is relatively strong and is located at a peak position. That is to say, after the electromagnet 621 is energized to magnetize the mask plate 610 , the strong magnetism and the weak magnetism are alternately distributed on the mask plate 610 , the area corresponding to the strong magnetism is the first area 101 , and the area corresponding to the weak magnetism is the second area area 102. It can be understood that the area of the area opposite to the electromagnet 621 is equal to the projected area of the electromagnet 621 on the first surface 613 , or the area of the area opposite to the electromagnet 621 is larger than the area of the electromagnet 621 on the first surface 613 shadow area.

FIG. 4 is a schematic structural diagram of a substrate provided by the method for fabricating the micro-nano layer structure shown in FIG. 2 .

Step S11 : providing a substrate 700 , the substrate 700 includes a base 710 and an original glue layer 720 disposed on the base 710 , the original glue layer 720 includes a colloid 721 and magnetic particles 722 doped in the colloid 721 , and the magnetic particles 722 are inverse magnetic particles Or paramagnetic particles. The magnetic particles 722 are doped in the colloid 721 . The diamagnetic particles are made of one or more of gold, silver, copper and lead. When diamagnetic particles are in a magnetic field, they flee to areas with weak or no magnetic fields. The paramagnetic particles are made of one or more of triiron tetroxide, iron, cobalt, and nickel. When the paramagnetic particles are located in a magnetic field, they tend to move to a region with a stronger magnetic field. The magnetic particles 722 are uniformly arranged in the colloid 721 .

The original glue layer 720 is formed on a surface of the substrate 710 by spin coating. In this embodiment, the substrate 710 is any one of a silicon dioxide plate, a glass plate, a silicon plate, an indium phosphide plate and a gallium arsenide plate. The original glue layer 720 is made of hot embossing glue or UV embossing glue, the hot embossing glue includes thermoplastic embossing glue or thermosetting embossing glue, and the thermoplastic embossing glue is polymethacrylate, polystyrene and polycarbonate One or more combinations of ; the thermosetting embossing adhesive is one or a combination of polyvinyl phenol and propylene phthalate oligomer. UV embossing glue includes one of acrylic type, polystyrene type and epoxy type or a combination of both.

Step S12 : patterning the original glue layer, facing the mask member and the substrate, with a preset distance between the mask member and the substrate, and the magnetic force of the first area drives the magnetic particles corresponding to the first area to move, so that the original glue is moved. The layer forms a patterned mask layer; the patterned mask layer includes a staggered distribution of mask portions and spacer regions, and the density of magnetic particles in the mask portion is greater than that of the spacer regions; one of the mask portion and the spacer regions One corresponds to the first area and the other corresponds to the second area. It should be noted that, according to the actual functional requirements of the dielectric layer, the mask parts corresponding to the multiple first regions, that is, any two or more of the multiple mask parts, can be connected to each other at a certain edge position to form the dielectric layer. The pattern of the layers to suit the design of the metal traces. Any two or more of the same plurality of spacers may be connected to each other at a certain edge position.

5a , 5b , 5c , 5d , 5e and 5f , FIGS. 5a to 5f are schematic diagrams of the mask and the substrate in the fabrication method of the micro-nano layer structure shown in FIG. 2 . The mask members in Figs. 5a to 5f correspond to the mask members in Figs. 3a to 3f, respectively.

6a, 6b, 6c, 6d, 6e, and 6f, FIGS. 6a to 6f are the masks and substrates corresponding to FIGS. 5a to 5f, and the mask is used to make the substrate form the mask portion. Schematic. That is, it is a schematic diagram of adopting several implementation manners of the first to fourth embodiments in step S12.

In an embodiment, step S12 specifically includes: patterning the original glue layer 720, the first region generates a repulsive force on the diamagnetic particles 726, and the repulsive force drives the diamagnetic particles 726 to move to the region corresponding to the second region, forming a region corresponding to the second region. The mask portion 723 corresponding to the two regions is formed, and the spacer region 724 corresponding to the first region is formed. The mask portion 723 is a convex portion 723a that protrudes away from the substrate, and the spacer 724 is a concave portion that is concave toward the substrate. The thickness of the convex portion 723a is larger than that of the concave portion.

The repulsive force generated by the first region 101 is called the first repulsive force, and the first repulsive force drives the displacement of the diamagnetic particles 726, so that the original glue layer 720 forms the convex part 723a and the concave part, so that the original glue layer 720 forms a patterned mask. The film layer 725 and the convex portion 723 a are the mask portion 723 . That is to say, the magnetic particles 722 at this time are inverse magnetic particles 726 , the magnetic force of the first region 101 is called the first magnetic force, the first magnetic force is the first repulsive force, and the convex portion 723 a is formed between the original glue layer 720 and the The area corresponding to the second area 102 .

Although the magnetic field strength of the second region 102 is relatively small, it may also generate a second magnetic force acting on the diamagnetic particles 726 . The second magnetic force is a second repulsive force, wherein the second repulsive force is smaller than the first repulsive force, And the second repulsive force can approach 0. The diamagnetic particles 726 corresponding to the first region 101 can be rapidly moved to correspond to the second region 102 , thereby speeding up the preparation efficiency. The first repulsive force is between 5 times and 200 times the second repulsive force. In this embodiment, the first repulsive force is 100 times the second repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., of the second repulsive force.

The first area 101 and the second area 102 are adjacent, so the farther the second area 102 is from the adjacent first area 101, the weaker the influence of the magnetic field of the first area 101 is, and the second area 102 is farther away from the adjacent first area. The closer the position 101 is to the magnetic field of the first region 101 , the stronger the magnetic repulsion force is at the center of the second region 102 , and the diamagnetic particles 726 tend to move toward the center corresponding to the second region 102 . When the position moves, the diamagnetic particles 726 will drive the colloid to move. Therefore, the cross-section of the finally formed convex portion 723a is a shape with a height gradually decreasing from the middle to both sides, similar to a convex arc.

Step S12 is more specifically as follows: the substrate 700 is placed under the mask member, and the original glue layer 720 is positioned under the mask member. Then, move the mask member toward the substrate 700 , and stop moving the mask member when the distance between the mask member and the substrate 700 reaches a preset distance; so that the first region 101 can react to the diamagnetic particles in the original glue layer 720 . A first repulsive force is generated; the first repulsive force drives the displacement of the diamagnetic particles, so that the region corresponding to the second region 102 of the original glue layer 720 forms the convex portion 723 a, so that the original glue layer 720 forms the patterned mask layer 725 .

The predetermined distance between the mask member opposite to the original glue layer 720 and the substrate 700 is determined according to the height of the convex portion 723a formed subsequently, and is set on the basis that the convex portion 723a does not contact the mask member. That is, the preset distance between the mask member located above the substrate 700 and the substrate 700 in the figure is determined according to the height of the convex portion 723a. The distance between the surfaces of the mask member facing the substrate 700 can be understood as the mask member not in contact with the original glue layer 720 . For example, the height of the convex portion 723a is 3 mm, specifically, the distance between the highest point of the convex portion 723a and the surface of the substrate 710 facing the original glue layer 720 is 3 mm. Then, the upper mask member can be moved to a distance of more than 3 mm from the substrate 700 , and can be set to 4 mm, 5 mm, 7 mm, and so on.

Since the magnetic particles are diamagnetic particles 726 , the magnetic field of the mask generates a first repulsive force on the diamagnetic particles 726 located therein. Since the magnetic field strength of the first region 101 of the mask member is greater than the magnetic field strength of the second region 102 , after the diamagnetic particles 726 are acted by the first repulsive force, the diamagnetic particles in the region corresponding to the first region 101 on the original glue layer 720 726, move to the area corresponding to the second area 102 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move, so that the original colloid layer 720 and the area corresponding to the first area 101 are thinned and formed. In the spacer region 724 , the portion of the original glue layer 720 corresponding to the second region 102 is raised in a direction away from the substrate 710 to form a convex portion 723 a , so that the original glue layer 720 forms a patterned mask layer 725 .

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.1 Tesla to 50 Tesla. For example, the magnetic induction intensity of the mask piece is 0.1 Tesla, 5 Tesla, 10 Tesla, 15 Tesla, 25 Tesla, 35 Tesla, 45 Tesla, or 50 Tesla.

The magnetic induction intensity of the mask member is within the above-mentioned range, which can ensure that the mask member generates sufficient repulsive force to the magnetic particles, ensures the smooth formation of the convex portion 723a, and can maintain the thickness of the convex portion 723a to form a suitable thickness after etching. in the range of micro-nano structures. To avoid that the magnetic induction intensity of the mask member is not suitable, the thickness of the convex portion 723a is insufficient, and the subsequent etching may not be able to the substrate, resulting in failure to process the micro-nano structure; or, the convex portion 723a is too thick, which may occur Subsequent etched micro-nano structures are too deep.

The viscosity of the colloid 721 of the original colloid layer 720 ranges from 1 Pascal second (Pa·s) to 00 Pascal second (Pa·s). For example, the viscosity of the colloid 721 of the original rubber layer 720 is 1 Pascals, 5 Pascals, 10 Pascals, 20 Pascals, Pascals, 500 Pascals, 2000 Pascals, 4000 Pascals, 6000 Pascals, 8000 Pascals, 00 Pascal seconds, etc.

The viscosity of the colloid 721 of the original colloid layer 720 is within the above-mentioned range, so that the convex portion 723a can be formed smoothly, and the thickness can be kept within the range that can be etched into a pattern. It is avoided that the convex portion 723a fails to be formed, or even if the convex portion 723a is formed, the thickness of the convex portion 723a is not appropriate.

In this embodiment, the mask member is opposite to the original glue layer 720 of the substrate 700 . Specifically, the mask member and the original glue layer 720 are opposite to the surface of the base body 710 , so that the distance between the mask member and the original glue layer 720 is longer. In this way, the magnetic repulsion force can better act on the magnetic particles, so that the convex portion 723a can be formed quickly, thereby speeding up the production progress.

In FIG. 6a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than that of the hollow region 105 (the second region 102), the diamagnetic particles 726 in the original glue layer 720 are subjected to the first After the repulsive force acts, the diamagnetic particles 726 in the area corresponding to the shielding area 106 on the original glue layer 720 move to the area corresponding to the hollow area 105 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloids 721 are driven. Move, so that the area corresponding to the original glue layer 720 and the shielding area 106 is thinned to form the spacer area 724, and the part corresponding to the original glue layer 720 and the hollow area 105 is raised in the direction away from the base body 710 to form a convex part 723a (mask part 723a). ), and then the original glue layer 720 forms a patterned mask layer 725 .

In FIG. 6b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second region 102), the diamagnetic particles 726 in the original glue layer 720 are first repelled After the force acts, the diamagnetic particles 726 in the area corresponding to the protrusions 204 on the original glue layer 720 move to the area corresponding to the concave portion 203 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloids 721 will be moved. In order to make the area corresponding to the original glue layer 720 and the protrusion 204 thin to form a spacer region 724, the part corresponding to the original glue layer 720 and the concave part 203 is convex in the direction away from the base 710 to form a convex part 723a (mask part 723), and then The original glue layer 720 is formed into a patterned mask layer 725 .

In FIG. 6c , since the magnetic field strength of the shielding region 311 (the first region 101 ) of the mask member 300 is greater than that of the hollow region 312 (the second region 102 ), the diamagnetic particles 726 in the original glue layer 720 are subjected to the first After the repulsive force acts, the diamagnetic particles 726 in the area corresponding to the shielding area 311 on the original glue layer 720 move to the area corresponding to the hollow area 312 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloids 721 are driven. Move, so that the area corresponding to the original glue layer 720 and the shielding area 311 is thinned to form a spacer area 724, and the part corresponding to the original glue layer 720 and the hollow area 312 is raised in the direction away from the base body 710 to form a convex portion 723a, thereby making the original glue layer 720. Layer 720 forms a patterned mask layer 725 .

In FIG. 6d , since the electromagnetic member 420 of the mask member 400 is energized to generate a magnetic field, the mask plate 410 is magnetic, and the magnetic field strength of the protrusion 411 (the first area 101 ) is greater than that of the recess 412 (the second area 102 ). Therefore, after the diamagnetic particles 726 in the original glue layer 720 are acted by the first repulsive force, the diamagnetic particles 726 in the region corresponding to the protrusions 411 on the original glue layer 720 are directed to the regions corresponding to the concave parts 412 with weaker magnetic field. During the movement, the diamagnetic particles 726 will drive the corresponding colloids 721 to move, so that the area corresponding to the original glue layer 720 and the protrusions 411 is thinned to form a spacer 724, and the parts corresponding to the original glue layer 720 and the concave parts 412 are moved away from The base body 710 protrudes in the direction to form a convex portion 723 a (mask portion 723 ), and then the original glue layer 720 forms a patterned mask layer 725 .

In FIG. 6e , since the electromagnetic member 520 of the mask member 500 is energized to generate a magnetic field, the mask plate 510 is magnetic, and the magnetic field strength of the shielding region 511 (first region 101 ) is greater than that of the hollow region 512 (second region 102 ). Therefore, after the diamagnetic particles 726 in the original glue layer 720 are acted by the first repulsive force, the diamagnetic particles 726 in the area corresponding to the shielding area 511 on the original glue layer 720 are directed to the hollow area 512 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloids 721 will be moved, so that the area corresponding to the original glue layer 720 and the blocking area 511 is thinned to form a spacer area 724, and the original glue layer 720 corresponds to the hollow area 512. The part protrudes away from the base body 710 to form a convex part 723a (mask part 723 ), and then the original glue layer 720 forms a patterned mask layer 725 .

In FIG. 6f, since the electromagnetic member 620 of the mask member 600 is energized to generate a magnetic field, thereby making the mask plate 610 magnetic, and the magnetic field strength of the first region 101 is greater than that of the second region 102, the diamagnetic particles 726 are subjected to After the first repulsive force acts, the diamagnetic particles 726 in the area corresponding to the first area 101 on the original glue layer 720 move to the area corresponding to the second area 102 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the diamagnetic particles 726 will drive The corresponding colloid 721 is moved, so that the region corresponding to the original glue layer 720 and the first region 101 is thinned to form a spacer region 724, and the part corresponding to the original glue layer 720 and the second region 102 is convex in the direction away from the base body 710 to form a convex portion 723a (mask part 723 ), and then the original glue layer 720 is formed into a patterned mask layer 725 .

Referring to FIG. 7a and FIG. 7b, FIG. 7a and FIG. 7b are schematic diagrams of another structure in which the mask member is opposite to the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 . In this embodiment, the mask member in Fig. 7a is the mask member in Fig. 3a, and the mask member in Fig. 7b is the mask member in Fig. 3f. In other embodiments, the mask member located above the substrate 700 may also use the mask member shown in any one of FIGS. 3b to 3e. The mask member located under the substrate 700 may also use the mask member shown in any one of FIGS. 3b to 3e.

Referring to FIG. 8a and FIG. 8b, FIG. 8a and FIG. 8b are schematic diagrams corresponding to the mask member in FIG. 7a and FIG. 7b using a magnetic field to form a mask portion on the substrate.

In another embodiment, the number of mask members is two; the magnetic particles are diamagnetic particles. Step S12 specifically includes: the mask member is opposed to the substrate, and the step of driving the magnetic particles corresponding to the first area by the magnetic force of the first area includes: placing the substrate between the two mask members, so that the original glue layer Opposite to one of the mask members, the base body is opposite to the other of the mask members; the first repulsive force of the first region of one of the mask members, and the second repulsion force of the first region of the other mask member, drive Magnetic particles corresponding to the first region move.

Although the magnetic field strengths of the second regions 102 of the two mask members are relatively small, the above-mentioned second magnetic force acting on the diamagnetic particles 726 may also be generated. The third repulsive force generated by the diamagnetic particles 726 in the second region 102 of the other mask member generates a fourth repulsive force to the diamagnetic particles 726 in the original glue layer 720, and the second magnetic force includes the third repulsive force and Fourth Repulsive Force. But the third repulsive force is much smaller than the first repulsive force, the fourth repulsive force is much smaller than the second repulsive force, the third and fourth repulsive forces can approach 0, the first repulsive force, the second repulsive force, the third The repulsive force and the fourth repulsive force are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, so that the diamagnetic particles 726 corresponding to the first region 101 can quickly move to correspond to the second region 102 , thereby speeding up the preparation efficiency. The first repulsive force is between 5 and 200 times the third repulsive force, and the second repulsive force is between 5 and 200 times the fourth repulsive force.

In this embodiment, the first repulsive force is 100 times the third repulsive force, and the second repulsive force is 100 times the fourth repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. of the third repulsive force, and the second repulsive force is the fourth repulsive force 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc.

The first repulsive force and the second repulsive force drive the diamagnetic particles 726 to displace, so that the original glue layer 720 forms a convex part 723a and a concave part, so that the original glue layer 720 forms a patterned mask layer 725, and the convex part 723a is the mask Membrane portion 723 . That is to say, the magnetic particles 722 at this time are inverse magnetic particles 726 , the first magnetic force includes a first repulsive force and a second repulsive force, and the convex portion 723 a is formed in the region of the original glue layer 720 corresponding to the second region 102 .

Since the magnetic particles are diamagnetic particles 726 , the magnetic field of the mask generates a first repulsive force and a second repulsive force on the diamagnetic particles 726 located therein. Since the magnetic field strength of the first region 101 of the mask is greater than the magnetic field strength of the second region 102 , after the diamagnetic particles 726 are acted by the first repulsive force and the second repulsive force, the original glue layer 720 corresponds to the first region 101 The diamagnetic particles 726 in the area move toward the area corresponding to the second area 102 with a weaker magnetic field. During the movement of the diamagnetic particles 726 , the corresponding colloids 721 will be driven to move, so that the original colloid layer 720 corresponds to the first area 101 The area of the original glue layer 720 is thinned to form a spacer region 724 , and the portion of the original glue layer 720 corresponding to the second region 102 is raised away from the substrate 710 to form a convex portion 723 a , and then the original glue layer 720 forms a patterned mask layer 725 .

Step S12 is more specifically as follows: the substrate 700 is placed between the two mask members, so that the raw glue layer 720 of the substrate 700 is opposite to one of the mask members, and the base 710 of the substrate 700 is opposite to the other mask member. Then, move the two mask members towards the substrate 700. When the distance between the mask member located above the substrate 700 and the substrate 700 is the first preset distance, stop moving the mask member above the substrate 700; When the distance between the lower mask member and the substrate 700 is the second predetermined distance, the movement of the mask member under the substrate 700 is stopped. So that the first area 101 of one mask member produces a first repulsive force to the diamagnetic particles in the original glue layer 720; Repulsive force; the first repulsive force and the second repulsive force drive the displacement of the diamagnetic particles, so that the region corresponding to the original glue layer 720 and the second region 102 forms the convex portion 723a, so that the original glue layer 720 forms the patterned mask layer 725 .

The first predetermined distance between the mask member opposite to the original glue layer 720 and the substrate 700 is determined according to the height of the subsequently formed convex portion 723a, and is set on the basis that the convex portion 723a is not in contact with the mask member. That is, the first preset distance between the mask member located above the substrate 700 and the substrate 700 in the figure is determined according to the height of the convex portion 723a. Here, the first preset distance means that the substrate 710 faces the original glue layer. The distance between the surface of 720 and the surface of the mask member facing the substrate 700 . For example, the height of the convex portion 723a is 3 mm, specifically, the distance between the highest point of the convex portion 723a and the surface of the substrate 710 facing the original glue layer 720 is 3 mm. Then, the upper mask member can be moved to a distance of more than 3 mm from the substrate 700 , and can be set to 4 mm, 5 mm, 7 mm, and so on.

The second preset distance between the mask member opposite to the base body 710 and the substrate 700 is based on the base body 710 not in contact with the mask member. That is to say, the second preset distance between the mask member located under the substrate 700 and the substrate 700 is based on the fact that the two do not come into contact with each other. Here, the second preset distance refers to the distance between the surface of the substrate 710 facing away from the original glue layer 720 and the surface of the mask member located under the substrate 700 facing the substrate 700 . For ease of control, set the second preset distance to 2mm, 3mm, 4mm, etc.

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.1 Tesla to 50 Tesla. For example, the magnetic induction intensity of the mask piece is 0.1 Tesla, 5 Tesla, 10 Tesla, 15 Tesla, 25 Tesla, 35 Tesla, 45 Tesla, or 50 Tesla.

The magnetic induction intensity of the mask member is within the above-mentioned range, which can ensure that the mask member can generate enough repulsive force to the magnetic particles, ensure the smooth formation of the convex portion 723a, and can maintain the thickness of the convex portion 723a to form a suitable thickness after etching. in the range of micro-nano structures. To avoid that the magnetic induction intensity of the mask member is not suitable, the thickness of the convex portion 723a is insufficient, and the subsequent etching may not be able to the substrate, resulting in failure to process into a micro-nano structure; or, the convex portion 723a is too thick, which may occur Subsequent etched micro-nano structures are too deep.

The viscosity of the colloid 721 of the original colloid layer 720 ranges from 1 Pascal second (Pa·s) to 00 Pascal second (Pa·s). For example, the viscosity of the colloid 721 of the original rubber layer 720 is 1 Pascals, 5 Pascals, 10 Pascals, 20 Pascals, Pascals, 500 Pascals, 2000 Pascals, 4000 Pascals, 6000 Pascals, 8000 Pascals, 00 Pascal seconds, etc.

The viscosity of the colloid 721 of the original colloid layer 720 is within the above-mentioned range, so that the convex portion 723a can be formed smoothly, and the thickness can be kept within the range that can be etched into a pattern. It is avoided that the convex portion 723a fails to be formed, or even if the convex portion 723a is formed, the thickness of the convex portion 723a is not appropriate.

In this embodiment, one mask member is opposite to the original glue layer 720 of the substrate 700 . Specifically, one mask member is opposite to the surface of the original glue layer 720 facing away from the base body 710 , and the other mask member is opposite to the base body 710 of the substrate 700 . Specifically, the other mask member is opposite to the surface of the substrate 710 facing away from the original glue layer 720, and the respective first regions 101 of the two mask members are opposite to each other, and the respective second regions 102 of the two mask members are opposite to each other, so that the two mask members are opposite to each other. Each mask piece can generate a repulsive force on the diamagnetic particles 726 . The two act together, and the repulsive force is stronger, so that the diamagnetic particles move more quickly from the area corresponding to the first area 101 to the area corresponding to the second area 102 . area, so that the convex portion 723a can be formed quickly, thereby speeding up the production schedule.

In FIG. 8a, since the magnetic field strength of the shielding regions 106 (first region 101) of the two mask members 100 is greater than the magnetic field strength of the hollow region 105 (second region 102), the diamagnetic particles 726 in the original glue layer 720 are affected by After the first repulsive force exerted by the upper mask member 100 and the second repulsive force exerted by the lower mask member 100 , the inverse direction of the area corresponding to the shielding regions 106 of the two mask members 100 on the original glue layer 720 . The magnetic particles 726 move to the regions corresponding to the hollow areas 105 of the two mask members 100 with weaker magnetic fields. During the movement of the inverse magnetic particles 726, the corresponding colloids 721 are driven to move, so that the original glue layer 720 and the two The area corresponding to the shielding area 106 of the mask member 100 is thinned to form a spacer area 724, and the parts corresponding to the original glue layer 720 and the hollow areas 105 of the two mask members 100 are raised in a direction away from the base 710 to form a convex portion 723a, and then a convex portion 723a is formed. The original glue layer 720 is formed into a patterned mask layer 725 .

In FIG. 8b, after the electromagnetic member 620 is energized, the mask plate 610 is magnetized and a magnetic field is formed. The magnetic field strength of the first region 101 of the mask member 600 is greater than that of the second region 102, so the diamagnetic particles in the original glue layer 720 After the first repulsive force 726 exerted by the upper mask member 600 and the second repulsive force exerted by the lower mask member 600, the original glue layer 720 corresponds to the first regions 101 of the two mask members 600 The diamagnetic particles 726 in the region move to the regions corresponding to the second regions 102 of the two mask members 600 with weaker magnetic fields. During the movement of the diamagnetic particles 726, the corresponding colloids 721 are driven to move, so that the original colloid layer is moved. 720 The area corresponding to the first area 101 of the two mask members 600 is thinned to form a spacer area 724, and the portion of the original glue layer 720 corresponding to the second area 102 of the two mask members 600 protrudes in a direction away from the base body 710, The convex portion 723a is formed, and then the original glue layer 720 is formed into a patterned mask layer 725.

9a, 9b, 9c, 9d, 9e and 9f, FIGS. 9a to 9f are another structural schematic diagram of the mask member and the substrate in the manufacturing method of the micro-nano layer structure shown in FIG. 2 . The mask members in Figs. 9a to 9f correspond to the mask members in Figs. 3a to 3f, respectively.

10a , 10b , 10c , 10d , 10e and 10f , FIG. 10a and FIG. 10f are schematic diagrams corresponding to the mask members in FIGS. 9a to 9f that use a magnetic field to form a mask portion on the substrate.

In another embodiment, the magnetic particles 722 are paramagnetic particles 727 . Step S12 specifically includes: the first region 101 generates an adsorption force on the paramagnetic particles 727 , and the adsorption force drives the paramagnetic particles 727 to move to the region corresponding to the first region 101 to form a mask portion 723 corresponding to the first region 101 , and Spacers 724 corresponding to the second regions 102 are formed. The mask portion 723 is a convex portion 723a that protrudes away from the substrate, and the spacer 724 is a concave portion that is concave toward the substrate. The thickness of the convex portion 723a is larger than that of the concave portion.

The adsorption force generated by the first region 101 is called the first adsorption force, and the first adsorption force drives the displacement of the paramagnetic particles 727, so that the original glue layer 720 forms a convex part 723a and a concave part, and the convex part 723a is the mask part 723, A patterned mask layer 725 is formed so that the original glue layer 720 is formed. That is to say, at this time, the magnetic particles 722 are paramagnetic particles 727 , the magnetic force generated by the first region 101 is called the first magnetic force, the first magnetic force is the first adsorption force, and the convex portion 723 a is formed between the original glue layer 720 and the The area corresponding to the first area 101 .

Although the magnetic field strength of the second region 102 is relatively small, it may also generate a second magnetic force acting on the paramagnetic particles 727. The second magnetic force is the second adsorption force, but the second adsorption force is much smaller than the first adsorption force , and the second adsorption force approaches 0. The paramagnetic particles 727 corresponding to the second region 102 can be rapidly moved to correspond to the first region 101 , thereby speeding up the preparation efficiency.

The first adsorption force is between 5 times and 200 times that of the second adsorption force. In this embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first adsorption force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., of the second adsorption force.

It can be understood that the adsorption force at the center of the first region 101 is the largest, and the paramagnetic particles 727 tend to move to the position corresponding to the center of the first region 101 . Therefore, the cross-section of the finally formed convex portion 723 a is from the center A shape that gradually decreases in height to both sides, similar to a convex arc.

Step S12 more specifically includes: placing the substrate 700 under the mask, and making the original glue layer 720 under the mask. Then, move the mask member toward the substrate 700, and stop moving the mask member when the distance between the mask member and the substrate 700 is a preset distance; A first adsorption force is generated; the first adsorption force drives the displacement of the inverse magnetic particles, so that the region corresponding to the first region 101 of the original glue layer 720 forms the convex portion 723 a, so that the original glue layer 720 forms the patterned mask layer 725 .

The preset distance is determined according to the height of the convex portion 723a formed subsequently, and is set on the basis that the convex portion 723a is not in contact with the mask member. For the specific preset distance, reference is made to the above-mentioned embodiment, and details are not repeated here.

Since the magnetic particles are paramagnetic particles 727 , the magnetic field of the mask generates a first adsorption force on the paramagnetic particles 727 located therein. Since the magnetic field strength of the first region 101 of the mask member is greater than the magnetic field strength of the second region 102 , after the paramagnetic particles 727 are acted by the first adsorption force, the paramagnetic particles in the region corresponding to the second region 102 on the original glue layer 720 727, move to the area corresponding to the first area 101 with a strong magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the original colloid layer 720 and the area corresponding to the second area 102 are thinned and formed. In the spacer region 724 , the portion of the original glue layer 720 corresponding to the first region 101 protrudes away from the substrate 710 to form a convex portion 723 a , so that the original glue layer 720 forms a patterned mask layer 725 .

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.1 Tesla to 50 Tesla. For example, the magnetic induction intensity of the mask piece is 0.1 Tesla, 5 Tesla, 10 Tesla, 15 Tesla, 25 Tesla, 35 Tesla, 45 Tesla, or 50 Tesla.

The magnetic induction intensity of the mask member is within the above-mentioned range, which can ensure that the mask member can generate enough adsorption force to the magnetic particles, ensure the smooth formation of the convex portion 723a, and can keep the thickness of the convex portion 723a to be suitable for forming after etching. in the range of micro-nano structures. To avoid that the magnetic induction intensity of the mask member is not suitable, the thickness of the convex portion 723a is insufficient, and the subsequent etching may not be able to the substrate, resulting in failure to process into a micro-nano structure; or, the convex portion 723a is too thick, which may occur Subsequent etched micro-nano structures are too deep.

The viscosity of the colloid 721 of the original colloid layer 720 ranges from 1 Pascal second (Pa·s) to 00 Pascal second (Pa·s). For example, the viscosity of the colloid 721 of the original rubber layer 720 is 1 Pascals, 5 Pascals, 10 Pascals, 20 Pascals, Pascals, 500 Pascals, 2000 Pascals, 4000 Pascals, 6000 Pascals, 8000 Pascals, 00 Pascal seconds, etc.

The viscosity of the colloid 721 of the original colloid layer 720 is within the above-mentioned range, so that the convex portion 723a can be formed smoothly, and the thickness can be kept within the range that can be etched into a pattern. It is avoided that the convex portion 723a fails to be formed, or even if the convex portion 723a is formed, the thickness of the convex portion 723a is not appropriate.

In this embodiment, the mask member is opposite to the original glue layer 720 of the substrate 700 . Specifically, the mask member and the original glue layer 720 are opposite to the surface of the base body 710 , so that the distance between the mask member and the original glue layer 720 is longer. However, the mask member is not in contact with the original glue layer, so that the adsorption force acts on the magnetic particles better, so that the convex portion 723a can be formed quickly, thereby speeding up the production progress.

In FIG. 10a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than that of the hollow region 105 (the second region 102), the paramagnetic particles 727 in the original glue layer 720 are subjected to the first After the adsorption force acts, the paramagnetic particles 727 in the area corresponding to the hollow area 105 on the original glue layer 720 move to the area corresponding to the shielding area 106 with a strong magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloids 721 are driven. move, so that the area corresponding to the original glue layer 720 and the hollow area 105 is thinned to form a spacer area 724, and the part corresponding to the original glue layer 720 and the shielding area 106 is raised in the direction away from the base body 710 to form a convex part 723a, and then the original glue Layer 720 forms a patterned mask layer 725 .

In FIG. 10b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than that of the recess 203 (the second region 102), the paramagnetic particles 727 in the original glue layer 720 are subjected to the first adsorption After the force acts, the paramagnetic particles 727 in the area corresponding to the concave portion 203 on the original glue layer 720 move to the area corresponding to the protrusion 204 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, The area corresponding to the original glue layer 720 and the concave portion 203 is thinned to form a spacer region 724, and the portion corresponding to the original glue layer 720 and the protrusion 204 is raised in the direction away from the base 710 to form a convex portion 723a, and then the original glue layer 720 is formed. The mask layer 725 is patterned.

In FIG. 10c , since the magnetic field strength of the shielding region 311 (the first region 101 ) of the mask member 300 is greater than that of the hollow region 312 (the second region 102 ), the paramagnetic particles 727 in the original glue layer 720 are affected by the first After the adsorption force acts, the paramagnetic particles 727 in the area corresponding to the hollow area 312 on the original glue layer 720 move to the area corresponding to the shielding area 311 with a strong magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloids 721 are driven. move, so that the area corresponding to the original glue layer 720 and the hollow area 312 is thinned to form a spacer area 724, and the part corresponding to the original glue layer 720 and the shielding area 311 is raised in the direction away from the base body 710 to form a convex part 723a, thereby making the original glue Layer 720 forms a patterned mask layer 725 .

In FIG. 10d , since the magnetic field strength of the protrusion 411 (the first region 101 ) of the mask member 400 is greater than that of the recess 412 (the second region 102 ), the paramagnetic particles 727 in the original glue layer 720 are subjected to the first adsorption After the force acts, the paramagnetic particles 727 in the area corresponding to the concave portion 412 on the original glue layer 720 move to the area corresponding to the protrusion 411 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, In order to make the area corresponding to the original glue layer 720 and the concave part 412 thin to form a spacer area 724, the part corresponding to the original glue layer 720 and the protrusion 411 is raised in the direction away from the base 710 to form a convex part 723a, and then the original glue layer 720 is formed. The mask layer 725 is patterned.

In FIG. 10e , since the magnetic field strength of the shielding region 511 (the first region 101 ) of the mask member 500 is greater than that of the hollow region 512 (the second region 102 ), the paramagnetic particles 727 in the original glue layer 720 are affected by the first After the adsorption force acts, the paramagnetic particles 727 in the area corresponding to the hollow area 512 on the original glue layer 720 move to the area corresponding to the shielding area 511 with a strong magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloids 721 are driven. Move, so that the area corresponding to the original glue layer 720 and the hollow area 512 is thinned to form a spacer area 724, and the part corresponding to the original glue layer 720 and the shielding area 511 is raised in the direction away from the base body 710 to form a convex portion 723a, thereby making the original glue layer 720. Layer 720 forms a patterned mask layer 725 .

In FIG. 10f , since the magnetic field strength of the first region 101 of the mask member 600 is greater than the magnetic field strength of the second region 102 , the paramagnetic particles 727 in the original glue layer 720 are affected by the first adsorption force. The paramagnetic particles 727 in the region corresponding to the second region 102 move to the region corresponding to the first region 101 with a weaker magnetic field. During the movement of the paramagnetic particles 727 , the corresponding colloids 721 are driven to move, so that the original colloid layer 720 The region corresponding to the second region 102 is thinned to form a spacer region 724, and the portion of the original glue layer 720 corresponding to the first region 101 is raised in a direction away from the substrate 710 to form a convex portion 723a, and then the original glue layer 720 is formed into a patterned mask. Membrane layer 725.

Referring to FIG. 11a and FIG. 11b, FIG. 11a and FIG. 11b are still another structural schematic diagrams of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2 . The mask members in Figs. 11a and 11b correspond to the mask members in Figs. 3a and 3b, respectively. In other embodiments, the mask members in FIGS. 3c to 3f can also be used.

Referring to FIGS. 12a and 12b, FIG. 12a and FIG. 12b are schematic diagrams corresponding to the mask members in FIGS. 11a and 11b using a magnetic field to form a mask portion on the substrate.

In yet another embodiment of the present application, the substrate 700a includes a substrate 700a, a base body 710a, and a colloidal layer 720a disposed on the base 710a. The original colloidal layer 720a includes a colloid 721a and magnetic particles 722a, and the magnetic particles 722a are diamagnetic particles or paramagnetic particles. magnetic particles. The magnetic particles 722a are doped in the colloid 721a. The diamagnetic particles are made of one or more of gold, silver, copper and lead. When diamagnetic particles are in a magnetic field, they flee to areas with weak or no magnetic fields. The paramagnetic particles are made of one or more of triiron tetroxide, iron, cobalt, and nickel. When the paramagnetic particles are located in a magnetic field, they tend to move to a region with a stronger magnetic field.

That is to say, the structure of the substrate 700a is basically the same as that of the substrate 700 in the above-mentioned embodiment, the difference is that the viscosity range of the original glue layer 700a is different, which will be described in detail below.

Step S12 specifically includes: patterning the original glue layer 720a, the first area 101 generates a repulsive force on the diamagnetic particles 726a, and the repulsive force drives the diamagnetic particles 726a to move to the area corresponding to the second area 102 to form a corresponding area to the second area 102. The mask portion 723b is formed, and the spacer 724b corresponding to the first region 101 is formed. The mask portion 723b is a magnetic particle gathering portion, and the spacer region 724b is a magnetic particle sparse portion; the magnetic particle density at the magnetic particle gathering portion is greater than the magnetic particle density at the magnetic particle sparse portion. Opposing the mask member to the substrate 700a, the first magnetic force generated by the first region 101 is the first repulsive force; the second magnetic force generated by the second region 102 is the second repulsive force, wherein the second repulsive force is smaller than the first repulsive force force, and the second repulsive force approaches 0.

The repulsive force generated by the first region 101 is called the first repulsive force, and the first repulsive force drives the displacement of the diamagnetic particles 726a, so that the original glue layer 720a forms a mask portion 723b (magnetic particle aggregation portion) and a spacer region 724b (magnetic particles). sparse part), so that the original glue layer 720a forms a patterned mask layer 725a. That is, the magnetic particles 722a at this time are diamagnetic particles 726a, the first magnetic force is the first repulsive force, and the mask portion 723b is formed in the region corresponding to the second region 102 of the original glue layer 720a. Compared with the original glue layer 720a, the thickness of the mask portion 723b remains the same, but the number of the diamagnetic particles 726a increases, that is, the diamagnetic particles 726a gather at the mask portion 723b.

Although the magnetic field strength of the second region 102 is relatively small, it may also generate a second magnetic force acting on the diamagnetic particles 726a. The second magnetic force is a second repulsive force, wherein the second repulsive force is smaller than the first repulsive force, And the second repulsive force can approach 0. The diamagnetic particles 726a corresponding to the first region 101 can be rapidly moved to correspond to the second region 102, thereby speeding up the preparation efficiency. The first repulsive force is between 5 times and 200 times the second repulsive force. In this embodiment, the first repulsive force is 100 times the second repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., of the second repulsive force.

Step S12 more specifically includes: placing the substrate 700a under the mask, and making the original glue layer 720a under the mask. Then, move the mask member toward the substrate 700a, and stop moving the mask member when the distance between the mask member and the substrate 700a is a preset distance; so that the first region 101 can react to the diamagnetic particles in the original glue layer 720a. A first repulsive force is generated; the first repulsive force drives the displacement of the diamagnetic particles, so that the region corresponding to the original glue layer 720a and the second region 102 forms a mask portion 723b, so that the original glue layer 720a forms a patterned mask layer 725a.

The preset distance is determined according to the height of the mask portion 723b formed subsequently, and is set on the basis that the mask portion 723b is not in contact with the mask member. That is, the preset distance between the mask member located above the substrate 700a and the substrate 700a in the figure is determined according to the height of the mask portion 723b, and the preset distance here refers to the surface of the substrate 710a facing the original glue layer 720a The distance from the surface of the mask member facing the substrate 700a. For example, the height of the mask portion 723b is 3 mm, specifically, the distance between the surface of the mask portion 723b facing away from the substrate 710a and the surface of the substrate 710a facing the original glue layer 720a is 3 mm. Then, the upper mask member a may be moved to a distance of 3 mm or more from the substrate 700 a, and may be set to 4 mm, 5 mm, 7 mm, and so on.

In this embodiment, the magnetic particles are diamagnetic particles 726a, and the magnetic field of the mask member generates a first repulsive force on the diamagnetic particles 726a located therein. Since the magnetic field strength of the first region 101 of the mask is greater than the magnetic field strength of the second region 102, after the diamagnetic particles 726a are acted by the first repulsive force, the diamagnetic particles in the region corresponding to the first region 101 on the original glue layer 720a 726a, move to the area corresponding to the second area 102 with a weaker magnetic field, the number of diamagnetic particles 726a in the area corresponding to the original glue layer 720a and the first area 101 decreases, forming a spacer 724b, the original glue layer 720a and the second area 102 The diamagnetic particles 726a in the corresponding regions gather to form a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a. The number of the diamagnetic particles 726a in the spacer region 724b is small, and the density of the arrangement is low, and even there are no diamagnetic particles 726a. The thickness of the mask portion 723b is equal to the thickness of the spacer 724b.

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.01 Tesla to 5 Tesla. For example, the magnetic induction intensity of the mask piece is 0.01 Tesla, 0.5 Tesla, 1 Tesla, 2 Tesla, 2.5 Tesla, 3 Tesla, 4 Tesla, or 5 Tesla.

The magnetic induction intensity of the mask member is within the above-mentioned range, which can ensure that the mask member can generate sufficient adsorption force on the magnetic particles, ensure the smooth formation of the mask portion 723b, and can increase the density of the diamagnetic particles 726a in the mask portion 723b. It should be kept within the range where suitable micro-nano structures can be formed after etching. It is avoided that the magnetic induction intensity of the mask member is inappropriate, resulting in insufficient density of the inverse magnetic particles 726a at the mask portion 723b, and the subsequent etching may not be able to the substrate, resulting in failure to process the micro-nano structure; or, lead to the mask The diamagnetic particles 726a at the portion 723b are too dense, and the micro-nano structures etched subsequently may be too deep.

The viscosity of the colloid 721a of the original colloid layer 720a ranges from 0.001 Pascal seconds (Pa·s) to Pascal seconds (Pa·s). For example, the viscosity of the colloid 721a of the original colloid layer 720a is 0.001 Pascals, 5 Pascals, 10 Pascals, 20 Pascals, 30 Pascals, 40 Pascals, 50 Pascals, 60 Pascals, 70 Pascals, 80 Pascals , Pascal seconds, etc.

The viscosity of the colloid 721a of the original colloid layer 720a is within the above-mentioned range, so that the mask portion 723b can be formed smoothly, and the density of the diamagnetic particles 726a can be kept within a range that can be etched into a pattern. It is avoided that the mask portion 723b fails to be formed, or even if the mask portion 723b is formed, the density of the magnetic particles in the mask portion 723b is not appropriate.

In this embodiment, the density of the inverse magnetic particles 726a is used to distinguish the mask portion 723b and the spacer region 724b. The thickness of the mask portion 723b and the spacer region 724b are equal, and both are the same as the original glue layer 720a before the mask portion 723b and the spacer region 724b are formed. thickness is the same. In addition, in the process of forming the mask portion 723b, the mask member is not in contact with the original glue layer 720a, which increases the cleanliness of the product and improves the yield.

In FIG. 12a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than that of the hollow region 105 (the second region 102), the diamagnetic particles 726a in the original glue layer 720a are subjected to the first After the repulsive force acts, the inverse magnetic particles 726a in the area corresponding to the shielding area 106 on the original glue layer 720a move to the area corresponding to the hollow area 105 where the magnetic field is weak, so that the original glue layer 720a and the area corresponding to the shielding area 106 are reversed. The number of magnetic particles 726a is reduced, thereby forming spacer regions 724b, and the number of diamagnetic particles 726a in the region corresponding to the original glue layer 720a and the hollow region 105 is increased, thereby forming a mask portion 723b, and then the original glue layer 720a is formed into a patterned mask layer 725a .

In FIG. 12b, since the magnetic field strength of the protrusion 204 (the first area 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second area 102), the diamagnetic particles 726a in the original glue layer 720a are subject to the first repelling After the force is applied, the diamagnetic particles 726a in the area corresponding to the protrusions 204 on the original glue layer 720a move to the area corresponding to the concave portion 203 with a weaker magnetic field, so that the diamagnetic particles in the area corresponding to the original glue layer 720a and the protrusions 204 are moved. The number of diamagnetic particles 726a is reduced to form spacer regions 724b, and the number of diamagnetic particles 726a in the region corresponding to the concave portion 203 of the original glue layer 720a increases, thereby forming a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a.

Referring to FIG. 13a and FIG. 13b, FIG. 13a and FIG. 13b are schematic diagrams of another structure of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2. FIG. In this embodiment, the mask members in Figs. 13a and 13b correspond to the mask members in Figs. 3a and 3b, respectively. In other embodiments, the mask members in FIGS. 3c to 3f can also be used.

Referring to FIGS. 14a and 14b, FIG. 14a and FIG. 14b are schematic diagrams corresponding to the mask members in FIGS. 13a and 13b using a magnetic field to form a mask portion on the substrate.

In another embodiment of the present application, the number of mask members is two; the magnetic particles 722a are diamagnetic particles 726a. Specifically, step S12 includes: the mask member is opposed to the substrate, and the step of driving the magnetic particles corresponding to the first area to move by the magnetic force of the first area includes: placing the substrate between the two mask members, so that the original glue The layer is opposed to one of the mask members, and the base body is opposed to the other of the mask members; the first repulsive force of the first region of one of the mask members, and the second repulsion force of the first region of the other mask member, The magnetic particles corresponding to the first region are driven to move.

Although the magnetic field strengths of the second regions 102 of the two mask members are relatively small, they may also generate a second magnetic force acting on the diamagnetic particles 726a. The third repulsive force generated by the diamagnetic particles 726a, the second region 102 of the other mask member generates a fourth repulsive force to the diamagnetic particles 726a in the original glue layer 720a, and the second magnetic force includes the third repulsive force and the third repulsive force. Four repulsive forces. But the third repulsive force is much smaller than the first repulsive force, the fourth repulsive force is much smaller than the second repulsive force, the third and fourth repulsive forces can approach 0, the first repulsive force, the second repulsive force, the third The repulsive force and the fourth repulsive force are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, so that the diamagnetic particles 726a corresponding to the first region 101 can quickly move to correspond to the second region 102, thereby speeding up the production efficiency. The first repulsive force is between 5 and 200 times the third repulsive force, and the second repulsive force is between 5 and 200 times the fourth repulsive force.

In this embodiment, the first repulsive force is 100 times the third repulsive force, and the second repulsive force is 100 times the fourth repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. of the third repulsive force, and the second repulsive force is the fourth repulsive force 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc.

The first repulsive force and the second repulsive force drive the displacement of the diamagnetic particles 726a, so that the original glue layer 720a forms a mask portion 723b (magnetic particle dense portion) and a spacer 724b (magnetic particle sparse portion), so that the original glue layer 720a forms A patterned mask layer 725a is formed. That is to say, the magnetic particles 722a at this time are diamagnetic particles 726a, the first magnetic force includes a first repulsive force and a second repulsive force, and the mask portion 723b is formed in the region corresponding to the original glue layer 720a and the second region 102 . Compared with the original glue layer 720a, the thickness of the mask portion 723b remains the same, but the number of the diamagnetic particles 726a increases, that is, the diamagnetic particles 726a gather at the mask portion 723b.

Specifically, since the magnetic particles are diamagnetic particles 726a, the magnetic field of the mask member generates a first repulsive force and a second repulsive force on the diamagnetic particles 726a located therein. Since the magnetic field strength of the first region 101 of the mask member is greater than the magnetic field strength of the second region 102, after the diamagnetic particles 726a are acted by the first repulsive force and the second repulsive force, the original glue layer 720a corresponds to the first region 101 The diamagnetic particles 726a in the area move to the area corresponding to the second area 102 with a weaker magnetic field, and the number of diamagnetic particles 726a in the area corresponding to the first area 101 of the original glue layer 720a decreases, forming a spacer 724b, and the original glue layer 720a The diamagnetic particles 726a in the region corresponding to the second region 102 are gathered to form a mask portion 723b, and then the original glue layer 720a is formed into a patterned mask layer 725a. The number of the diamagnetic particles 726a in the spacer region 724b is small, and the density of the arrangement is low, and even there are no diamagnetic particles 726a.

The more specific steps of step S12 are as follows: the substrate 700a is placed between two mask members, so that the original glue layer 720a of the substrate 700a is opposite to one of the mask members, and the base 710a of the substrate 700a is opposite to the other mask member. Move both mask members towards the substrate 700a, when the distance between the mask member located above the substrate 700a and the substrate 700a is the first preset distance, stop moving the mask member above; when the mask member located below the substrate 700a When the distance between the mask member and the substrate 700a is the second preset distance, stop moving the mask member located below the substrate 700a; The magnetic particles generate a first repulsive force; the first region 101 of the other mask member below generates a second repulsive force to the inverse magnetic particles in the original glue layer 720a; the first repulsive force and the second repulsive force drive the inverse magnetic particles to move position, so that the region corresponding to the second region 102 of the original glue layer 720a forms a mask portion 723b, so that the original glue layer 720a forms a patterned mask layer 725a.

The first preset distance between the mask member opposite to the original glue layer 720a and the substrate 700a is determined according to the height of the formed mask portion 723b, and is set on the basis that the mask portion 723b is not in contact with the mask member. That is, the first preset distance between the mask member located above the substrate 700 and the substrate 700a in the figure is determined according to the height of the mask portion 723b. Here, the first preset distance means that the substrate 710a faces the original glue The distance between the surface of the layer 720a and the surface of the mask facing the substrate 700a. For example, the height of the mask portion 723b is 3 mm, specifically, the distance between the surface of the mask portion 723b facing away from the substrate 710a and the surface of the substrate 710a facing the original glue layer 720a is 3 mm. Then, the distance between the mask member located above and the substrate 700a may be 3 mm or more, and may be set to 4 mm, 5 mm, 7 mm, and so on.

The second predetermined distance between the mask member opposite to the base body 710a and the substrate 700a is based on the fact that the base body 710a is not in contact with the mask member. That is to say, the second preset distance between the mask member located under the substrate 700a and the substrate 700a is based on the fact that the two are not in contact. Here, the second preset distance refers to the distance between the surface of the substrate 710a facing away from the original glue layer 720a and the surface of the mask member located under the substrate 700a facing the substrate 700a. For ease of control, set the second preset distance to 2mm, 3mm, 4mm, etc.

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.01 Tesla to 5 Tesla. For example, the magnetic induction intensity of the mask piece is 0.01 Tesla, 0.5 Tesla, 1 Tesla, 2 Tesla, 2.5 Tesla, 3 Tesla, 4 Tesla, or 5 Tesla.

The magnetic induction intensity of the mask member is within the above-mentioned range, which can ensure that the mask member can generate sufficient adsorption force on the magnetic particles, ensure the smooth formation of the mask portion 723b, and can increase the density of the diamagnetic particles 726a in the mask portion 723b. It should be kept within the range where suitable micro-nano structures can be formed after etching. It is avoided that the magnetic induction intensity of the mask member is inappropriate, resulting in insufficient density of the inverse magnetic particles 726a at the mask portion 723b, and the subsequent etching may not be able to the substrate, resulting in failure to process the micro-nano structure; or, lead to the mask The diamagnetic particles 726a at the portion 723b are too dense, and the micro-nano structures etched subsequently may be too deep.

The viscosity of the colloid 721a of the original colloid layer 720a ranges from 0.001 Pascal seconds (Pa·s) to Pascal seconds (Pa·s). For example, the viscosity of the colloid 721a of the original colloid layer 720a is 0.001 Pascals, 5 Pascals, 10 Pascals, 20 Pascals, 30 Pascals, 40 Pascals, 50 Pascals, 60 Pascals, 70 Pascals, 80 Pascals , Pascal seconds, etc.

The viscosity of the colloid 721a of the original colloid layer 720a is within the above-mentioned range, so that the mask portion 723b can be formed smoothly, and the density of the diamagnetic particles 726a can be kept within a range that can be etched into a pattern. It is avoided that the mask portion 723b fails to be formed, or even if the mask portion 723b is formed, the density of the magnetic particles in the mask portion 723b is not appropriate.

In this embodiment, one mask member is opposite to the original glue layer 720a of the substrate 700a. Specifically, one mask member is opposite to the surface of the original glue layer 720a facing away from the base body 710a, and the other mask member is opposite to the base body 710a of the substrate 700a. Specifically, another mask member is opposite to the surface of the substrate 710a facing away from the original glue layer 720a, and the respective first regions 101 of the two mask members are opposite to each other, and the respective second regions 102 of the two mask members are opposite to each other, so that the two mask members are opposite to each other. Each mask can generate a repulsive force on the diamagnetic particles 726a, and the two act together, and the repulsive force is stronger, so that the diamagnetic particles 726a move more quickly from the area corresponding to the first area 101 to the area corresponding to the second area 102 area, so that the mask portion 723b can be formed quickly, thereby speeding up the production progress.

In FIG. 14a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than the magnetic field strength of the hollow region 105 (the second region 102), the diamagnetic particles 726a in the original glue layer 720a are subjected to the first After the repulsive force and the second repulsive force act, the diamagnetic particles 726a in the area corresponding to the shielding area 106 on the original glue layer 720a move to the area corresponding to the hollow area 105 with a weaker magnetic field, so that the original glue layer 720a and the shielding area are moved. The number of diamagnetic particles 726a in the region corresponding to 106 is reduced, thereby forming a spacer region 724b, and the number of diamagnetic particles 726a in the region corresponding to the original glue layer 720a and the hollow region 105 is increased, thereby forming a mask portion 723b, and then the original glue layer 720a is formed into a pattern A mask layer 725a is formed.

In FIG. 14b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than that of the recess 203 (the second region 102), the diamagnetic particles 726a in the original glue layer 720a are subject to the first repelling After the force and the second repulsive force act, the diamagnetic particles 726a in the area corresponding to the protrusion 204 on the original glue layer 720a move to the area corresponding to the concave part 203 with a weaker magnetic field, so that the original glue layer 720a corresponds to the protrusion 204 The number of diamagnetic particles 726a decreases in the area of the original glue layer 720a, thereby forming the spacer region 724b, and the number of diamagnetic particles 726a in the region corresponding to the original glue layer 720a and the concave portion 203 increases, so as to form a mask portion 723b, and then make the original glue layer 720a form a patterned mask Layer 725a.

Referring to FIG. 15a and FIG. 15b, FIG. 15a and FIG. 15b are another structural schematic diagram of the mask member facing the substrate in the method for fabricating the micro-nano layer structure shown in FIG. 2. FIG. The mask members in Figs. 15a and 15b correspond to the mask members in Figs. 3a and 3b, respectively. In other embodiments, the mask members in FIGS. 3c to 3f can also be used.

Referring to FIG. 16a and FIG. 16b, FIG. 16a and FIG. 16b are schematic diagrams corresponding to the mask member in FIG. 15a and FIG. 15b using a magnetic field to form a mask portion on the substrate.

In yet another embodiment of the present application, the magnetic particles 722a are paramagnetic particles 727a. Step S12 specifically includes: the first region 101 generates an adsorption force on the paramagnetic particles 727a, and the adsorption force drives the paramagnetic particles 727a to move to the region corresponding to the first region 101 to form a mask portion 723b corresponding to the first region 101, and Spacers 724b corresponding to the second regions 102 are formed.

The adsorption force generated by the first region 101 is called the first adsorption force, and the first adsorption force drives the displacement of the paramagnetic particles 727a, so that the original glue layer 720a forms the mask portion 723b and the spacer region 724b, so that the original glue layer 720a forms a pattern A mask layer 725a is formed. That is to say, the magnetic particles 722a at this time are paramagnetic particles 727a, the first magnetic force is the first adsorption force, and the mask portion 723b is formed in the region corresponding to the first region 101 of the original glue layer 720a. Compared with the original glue layer 720a, the thickness of the mask portion 723b remains unchanged, but the number of paramagnetic particles 727a increases, that is, the paramagnetic particles 727a gather at the mask portion 723b.

Although the magnetic field strength of the second region 102 is relatively small, it may also generate a second magnetic force acting on the paramagnetic particles 727a. The second magnetic force is the second adsorption force, but the second adsorption force is much smaller than the first adsorption force. And the second adsorption force is close to 0. The paramagnetic particles 727a corresponding to the first region 101 can be rapidly moved to correspond to the first region 101, thereby speeding up the preparation efficiency. The first adsorption force is between 5 times and 200 times that of the second adsorption force. In this embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first adsorption force is 5 times, 10 times, 20 times, 30 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., of the second adsorption force.

Step S12 more specifically includes: placing the substrate 700a under the mask, and making the original glue layer 720a under the mask. Then, move the mask member toward the substrate 700a, and stop moving the mask member when the distance between the mask member and the substrate 700a is a preset distance; so that the first region 101 can react to the diamagnetic particles in the original glue layer 720a. A first adsorption force is generated; the first adsorption force drives the inverse magnetic particles to displace, so that the region corresponding to the original glue layer 720a and the first region 101 forms a mask portion 723b, so that the original glue layer 720a forms a patterned mask layer 725a.

The preset distance is determined according to the height of the mask portion 723b formed subsequently, and is set on the basis that the mask portion 723b is not in contact with the mask member. The preset distance can be set with reference to the above-mentioned embodiments, and details are not repeated here.

Since the magnetic particles are paramagnetic particles 727a, the magnetic field of the mask generates a first adsorption force on the paramagnetic particles 727a located therein. Since the magnetic field strength of the first region 101 of the mask is greater than the magnetic field strength of the second region 102 , after the paramagnetic particles 727a are acted by the first adsorption force, the paramagnetic particles in the region corresponding to the second region 102 on the original glue layer 720a 727a, move to the area corresponding to the first area 101 with a stronger magnetic field, the number of paramagnetic particles 727a in the area corresponding to the original glue layer 720a and the second area 102 decreases, forming a spacer 724b, the original glue layer 720a and the first area 101 The paramagnetic particles 727a in the corresponding regions gather to form a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a. The number of paramagnetic particles 727a in the spacer region 724b is small, and the density of the arrangement is low, and even there are no paramagnetic particles 727a.

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.01 Tesla to 5 Tesla. For example, the magnetic induction intensity of the mask piece is 0.01 Tesla, 0.5 Tesla, 1 Tesla, 2 Tesla, 2.5 Tesla, 3 Tesla, 4 Tesla, or 5 Tesla.

The magnetic induction intensity of the mask member is within the above-mentioned range, which can ensure that the mask member can generate sufficient adsorption force on the magnetic particles, ensure the smooth formation of the mask portion 723b, and can also increase the density of the paramagnetic particles 727a in the mask portion 723b. It should be kept within the range where suitable micro-nano structures can be formed after etching. It is avoided that the magnetic induction intensity of the mask member is inappropriate, resulting in insufficient density of the inverse magnetic particles 726a at the mask portion 723b, and the subsequent etching may not be able to the substrate, resulting in failure to process the micro-nano structure; or, lead to the mask The diamagnetic particles 726a at the portion 723b are too dense, and the micro-nano structures etched subsequently may be too deep.

The viscosity of the colloid 721a of the original colloid layer 720a ranges from 0.001 Pascal seconds (Pa·s) to Pascal seconds (Pa·s). For example, the viscosity of the colloid 721a of the original colloid layer 720a is 0.001 Pascals, 5 Pascals, 10 Pascals, 20 Pascals, 30 Pascals, 40 Pascals, 50 Pascals, 60 Pascals, 70 Pascals, 80 Pascals , Pascal seconds, etc.

The viscosity of the colloid 721a of the original colloid layer 720a is within the above-mentioned range, so that the mask portion 723b can be smoothly formed, and the density of the paramagnetic particles 727a can be kept within a range that can be etched into a pattern. It is avoided that the mask portion 723b fails to be formed, or even if the mask portion 723b is formed, the density of the magnetic particles in the mask portion 723b is not appropriate.

In FIG. 16a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than that of the hollow region 105 (the second region 102), the paramagnetic particles 727a in the original glue layer 720a are subjected to the first After the adsorption force acts, the paramagnetic particles 727a in the area corresponding to the hollow area 105 on the original glue layer 720a move to the area corresponding to the shielding area 106 with a strong magnetic field, so that the area corresponding to the original glue layer 720a and the hollow area 105 is aligned. The number of magnetic particles 727a is reduced, thereby forming spacer regions 724b, and the number of paramagnetic particles 727a in the region corresponding to the original glue layer 720a and the blocking region 106 is increased, thereby forming a mask portion 723b, and then the original glue layer 720a is formed into a patterned mask layer 725a .

In FIG. 16b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second region 102), the paramagnetic particles 727a in the original glue layer 720a are subject to the first adsorption After the force acts, the paramagnetic particles 727a in the area corresponding to the concave part 203 on the original glue layer 720a move to the area corresponding to the protrusion 204 with a stronger magnetic field, so that the paramagnetic particles 727a in the area corresponding to the original glue layer 720a and the concave part 203 The number of paramagnetic particles 727a in the region corresponding to the original glue layer 720a and the protrusions 204 increases to form a mask portion 723b, thereby forming a patterned mask layer 725a from the original glue layer 720a.

Step S13 : using the patterned mask layer as a mask, etching the substrate, so that the substrate forms a patterned dielectric layer. Specifically, the patterned mask layer is etched, so that the mask portion is partially etched, all other parts except the mask portion are etched, and the area corresponding to the base body and other parts is etched, so that the base body forms a patterned medium Floor. At this time, part of the mask portion remains on the base body 710 .

Referring to FIG. 17a, FIG. 17a is a schematic structural diagram of the patterned mask layer formed in FIGS. 6a to 6f, FIGS. 8a to 8b, and FIGS. 10a to 10f after being etched.

In one embodiment, step S13 specifically includes: using the patterned mask layer 725 as a mask, etching the base body 710 , and specifically, etching the entire patterned mask layer 725 forming the convex portion 723a. Since the patterned mask layer 725 includes a convex portion 723a (mask portion 723) and a concave portion (spacer region 724), the thickness of the convex portion 723a is greater than that of the concave portion (spacer region 724). Under the premise of the same etching time, the convex portion 723a is partially etched, and the spacer 724 is completely etched (during etching, the thicknesses of the convex portion 723a and the spacer 724 are reduced at the same time), and etched onto the base 710, and further, the base 710 is etched with The thickness of the portion corresponding to the convex portion 723 a is greater than that of the portion corresponding to the spacer region 724 , that is, spaced convex portions and grooves are formed on the base 710 , and then the patterned dielectric layer 730 is formed. After the etching is completed, a part of the convex part 723a is etched, and part of the convex part 723c remains, and the thickness of the remaining convex part 723c is smaller than that of the convex part 723a. Wherein, the etching adopts dry etching or wet etching.

Referring to FIG. 17b, FIG. 17b is a schematic structural diagram of the patterned mask layer formed in FIGS. 12a-12b, 14a-14b, and 16a-16b after being etched.

In another embodiment, step S13 specifically includes: using the patterned mask layer 725a as a mask, etching the substrate 710a, specifically, etching the entire patterned mask layer 725a forming the mask portion 723b. The patterned mask layer 725 includes a mask portion 723b (mask portion 723) and a spacer region 724b, and the density of magnetic particles at the mask portion 723b is greater than that of the spacer region 724b. Therefore, the hardness of the mask portion 723b is greater than that of the spacer 724b. Under the premise of the same etching time, the harder mask portion 723b is partially etched, and the softer spacer 724b is completely etched and etched onto the base body 710, and further, the thickness of the portion of the base body 710 corresponding to the mask portion 723b is greater than The thickness of the portion corresponding to the spacer region 724b is to form spaced protrusions and recesses on the base body 710, and then the patterned dielectric layer 730 is formed. After the etching is completed, the mask portion 723b is partially etched, and part of the mask portion 723d remains, and the thickness of the remaining mask portion 723d is smaller than that of the mask portion 723b.

Referring to FIG. 18 together, FIG. 18 is a schematic structural diagram of the mask portion remaining on the patterned dielectric layer in FIGS. 17 a and 17 b being removed.

Step S14 : removing the patterned mask layer remaining on the patterned dielectric layer to form the dielectric layer 730 . Specifically, the remaining convex portion 723c or the remaining mask portion 723d may be treated by oxygen plasma bombardment. The dielectric layer 730 may be used as the dielectric layer 12 of the electronic device shown in FIG. 1 . The dielectric layer 730 is a micro-nano layer structure.

In the method for fabricating the micro-nano layer structure provided in the embodiment of the present application, the mask member does not contact the original glue layer during the whole fabrication process, but uses magnetic force to adsorb or repel the magnetic particles in the original glue layer, thereby performing patterning processing , the mask piece is not in contact with the original glue layer, so the processing cleanliness is high, and the yield is improved. Non-contact processing can also be applied to smaller-sized patterns, such as sub-20 nanometer patterns. In addition, compared with the existing manufacturing method, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, developing, and post-baking, the process is relatively simple, the manufacturing steps are simplified, and the processing efficiency is improved.

The above are only some examples and implementations of the present application, and the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in the present application, and should cover within the scope of protection of this application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (25)

1. A preparation method of a micro-nano layer structure, comprising: A mask member is provided, the mask member has magnetic permeability or magnetism, the mask member includes alternately distributed first regions and second regions, and the magnetic field strength of the first region is greater than the magnetic field strength of the second region ; a substrate is provided, the substrate includes a base and a colloidal layer disposed on the base, the original colloidal layer includes a colloid and magnetic particles doped in the colloid; The mask member is opposite to the substrate, and there is a preset distance between the mask member and the substrate, and the magnetic force of the first region drives the magnetic particles corresponding to the first region to move, forming a patterned mask layer with the original glue layer; the patterned mask layer includes a staggered mask portion and a spacer region, and the density of magnetic particles in the mask portion is greater than that in the spacer region density; and one of the mask portion and the spacer corresponds to the first region, and the other corresponds to the second region; Using the patterned mask layer as a mask, etching the substrate, so that the substrate forms a patterned dielectric layer; The patterned mask layer remaining on the patterned dielectric layer is removed to form a dielectric layer. 2. The method for making a micro-nano layer structure according to claim 1, wherein the magnetic particles are diamagnetic particles; The step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region includes: the first region generates a repulsive force on the inverse magnetic particles, and the repulsive force drives the inverse magnetic particles to move toward the inverse magnetic particles. The area corresponding to the second area is moved to form the mask portion corresponding to the second area, and the spacer area corresponding to the first area is formed. 3. The method for making a micro-nano layer structure according to claim 1, wherein the magnetic particles are paramagnetic particles; The step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region includes: the first region generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles to move toward each other. The area corresponding to the first area is moved to form the mask portion corresponding to the first area, and the spacer area corresponding to the second area is formed. 4 . The method for fabricating a micro-nano layer structure according to claim 1 , wherein the mask portion is a convex portion that protrudes away from the base body, and the spacer region is a convex portion that protrudes away from the base body. 5 . A recessed portion adjacent to the base body. 5 . The method for fabricating a micro-nano layer structure according to claim 4 , wherein the thickness of the convex portion is greater than the thickness of the concave portion. 6 . 6 . The method for manufacturing a micro-nano layer structure according to claim 4 , wherein the magnetic induction of the mask member is between 0.1 Tesla and 50 Tesla, and the viscosity of the colloid is between 0.1 Tesla and 50 Tesla. 7 . Between 1 Pascal second and 10,000 Pascal seconds. 7 . The method for fabricating a micro-nano layer structure according to claim 4 , wherein the step of driving magnetic particles corresponding to the first region to move by the magnetic force of the first region comprises: 8 . The magnetic force of the first region drives the magnetic particles corresponding to the first region to drive the colloid to move, so as to form the convex portion. 8 . The method for fabricating a micro-nano layer structure according to claim 1 , wherein the mask portion is a magnetic particle gathering portion, and the spacer region is a magnetic particle sparse portion; the The magnetic particle density at the magnetic particle gathering portion is greater than the magnetic particle density at the magnetic particle sparse portion. 9 . The method for manufacturing a micro-nano layer structure according to claim 8 , wherein the magnetic induction intensity of the mask member is between 0.01 Tesla and 5 Tesla, and the viscosity of the colloid is between 0.01 Tesla and 5 Tesla. 10 . Between 0.001 Pascals and 100 Pascals. 10 . The method for fabricating a micro-nano layer structure according to claim 8 , wherein the step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region comprises: 10 . The magnetic force of the first region drives the magnetic particles corresponding to the first region to move, so as to form the magnetic particle gathering part. 11. The method for fabricating a micro-nano layer structure according to any one of claims 1 to 10, wherein, while the first region generates a first magnetic force for the magnetic particles, the second region A second magnetic force is generated on the magnetic particles, and the first magnetic force is between 5 times and 200 times the second magnetic force. 12. The method for fabricating a micro-nano layer structure according to any one of claims 1 to 11, wherein the number of the mask members is two; the magnetic particles are diamagnetic particles; The mask member is opposed to the substrate, and the magnetic force of the first region drives the magnetic particles corresponding to the first region to move, comprising: placing the substrate between the two mask members time, so that the original adhesive layer is opposite to one of the mask members, and the base body is opposite to the other one of the mask members; the first repulsive force of the first region of one of the mask members, and the second repulsive force of the first region of the other mask member to drive the diamagnetic particles corresponding to the first region to move. 13. The method for fabricating a micro-nano layer structure according to any one of claims 1 to 12, wherein the thickness of the first region is greater than the thickness of the second region, so that the first region has a thickness The magnetic field strength is greater than the magnetic field strength of the second region. 14. The method for fabricating a micro-nano layer structure according to any one of claims 1 to 12, wherein the mask member comprises a layered mask plate and an electromagnetic member, and the mask plate is a soft mask. The magnet is made; the first area and the second area are formed on the mask, and the thickness of the first area and the second area are equal; The electromagnet includes a plurality of electromagnets, the plurality of the electromagnets correspond to the first area, and the pattern formed by the plurality of the electromagnets is the same as the shape of the first area; so that the mask After the plate is magnetized by the electromagnet, the magnetic field strength of the first region is greater than the magnetic field strength of the second region. 15. An electronic device, characterized in that it comprises: a base layer, a dielectric layer and a functional layer, wherein the dielectric layer and the functional layer are sequentially stacked on the surface of the base layer, and the dielectric layer adopts the methods of claims 1 to 14. produced by any one of the production methods. 16. A processing device for a micro-nano layer structure, used in the manufacturing method according to any one of claims 1 to 14, wherein the processing device comprises: a mask member; the mask member has Magnetically permeable or magnetic, the mask member includes a first region and a second region that are staggered and distributed, and the magnetic field strength of the first region is greater than the magnetic field strength of the second region. 17 . The apparatus for processing a micro-nano layer structure according to claim 16 , wherein the thickness of the first region is greater than the thickness of the second region, so that the magnetic field strength of the first region is greater than that of the first region. 18 . Magnetic field strength in the second region. 18 . The processing device of the micro-nano layer structure according to claim 16 , wherein the mask member has a first surface and a second surface opposite to each other, and the mask member comprises a plurality of shielding regions and a plurality of hollow areas, the hollow areas penetrate through the first surface and the second surface, the shielding areas and the hollow areas are alternately arranged, and the patterns formed by the shielding areas are the same as the The mask portion is the same, or the pattern formed by the plurality of hollow regions is the same as the mask portion. 19 . The processing device of the micro-nano layer structure according to claim 17 , wherein the mask member comprises a plurality of protrusions and a plurality of recesses, and a region between any two adjacent recesses is formed. 20 . The protrusions; the pattern formed by a plurality of the protrusions is the same as that of the mask portion, or the pattern formed by a plurality of the recesses is the same as that of the mask portion. 20 . The processing device of the micro-nano layer structure according to claim 17 , wherein the mask member comprises a laminated first plate and a second plate, and the second plate has a first surface disposed opposite to each other. 21 . and a second surface, the second board includes a plurality of shielding areas and a plurality of hollow areas, the hollow areas run through the first surface and the second surface, between any two adjacent hollow areas The area of forms the shielding area; The first plate and the second plate are fixedly connected, a plurality of the shielding regions and the first plate form a plurality of protrusions, and a plurality of the hollow regions and the first plate form a plurality of concave portions; A pattern formed by one of the protrusions is the same as that of the mask portion, or a pattern formed by a plurality of the recesses is the same as that of the mask portion. 21 . The processing device of the micro-nano layer structure according to any one of claims 17 to 20 , wherein the mask member is made of a permanent magnet. 22 . 22. The processing device of any one of claims 17 to 20, wherein the mask plate comprises a layered mask plate and an electromagnetic component, and the mask plate is a soft The mask plate includes a first preparation area and a second preparation area, the first preparation area and the second preparation area have magnetism when the electromagnet is energized to generate magnetism, and the first preparation area is the first area, and the second preparation area is the second area. 23 . The processing device of the micro-nano layer structure according to claim 22 , wherein the electromagnets comprise a plurality of electromagnets, a plurality of the electromagnets correspond to the first region, and a plurality of the electromagnets The pattern formed by the electromagnet is the same as the shape of the first region. 24. The processing device of the micro-nano layer structure according to claim 22, wherein the electromagnets comprise a first group of electromagnets and a second group of electromagnets, the first group of electromagnets and the first group of electromagnets The pattern formed by the first group of electromagnets is the same as the shape of the first area; the second group of electromagnets corresponds to the second area, and the pattern formed by the second group of electromagnets The same shape as the second region. 25 . The processing device of the micro-nano layer structure according to claim 16 , wherein the mask plate comprises a layered mask plate and an electromagnetic component, and the mask plate is made of soft magnets; the The mask plate includes a first preparation area and a second preparation area, and the thickness of the first preparation area and the second preparation area are the same; when the electromagnet is energized to generate magnetism, the first preparation area and the second preparation area are The preparation area has magnetism, the first preparation area is the first area, and the second preparation area is the second area; The electromagnet includes a plurality of electromagnets, the plurality of electromagnets correspond to the first area, and the pattern formed by the plurality of electromagnets is the same as the shape of the first area.

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