CN1147719C - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- CN1147719C CN1147719C CNB998161896A CN99816189A CN1147719C CN 1147719 C CN1147719 C CN 1147719C CN B998161896 A CNB998161896 A CN B998161896A CN 99816189 A CN99816189 A CN 99816189A CN 1147719 C CN1147719 C CN 1147719C
- Authority
- CN
- China
- Prior art keywords
- foil gauge
- semiconductor pressure
- pressure sensor
- diaphragm
- silicon base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000011888 foil Substances 0.000 claims description 33
- 230000001154 acute effect Effects 0.000 claims description 3
- 238000005247 gettering Methods 0.000 description 22
- 239000012535 impurity Substances 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 229910052742 iron Inorganic materials 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 241000446313 Lamella Species 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000010349 pulsation Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 125000004436 sodium atom Chemical group 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000000080 chela (arthropods) Anatomy 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003434 inspiratory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- -1 iron Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
Images
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to a semiconductor pressure sensor which comprises a silicon substrate (1) with a diaphragm (10), strain gauges (5a, 5b, 5c, 5d) and a PN junction region, wherein the diaphragm deforms with the pressure, and the strain gauges are arranged on the diaphragm (10) and are formed by diffusion resistors; the PN junction region is arranged near the strain gauges (5a, 5b, 5c, 5d), and reverse bias is added to the PN junction region.
Description
Technical field
The present invention relates to semiconductor pressure sensor, specifically, the present invention is directed to the such semiconductor pressure sensor of foil gauge that a kind of use forms on silicon diaphragm.
Background technology
Usually, it is known adopting the semiconductor pressure sensor of foil gauge, and pressure transducer forms pressure-sensitive diaphragm on silicon base.By the sensor element of being made up of the diffused resistor layer (varistor device) is set on the presser sensor diaphragm.The variation of the deformation measurement pressure by detecting diaphragm.
Fig. 7 is to use the skeleton view of the semiconductor pressure sensor of conventional foil gauge.The part of pressure transducer is represented by section.As shown in Figure 7, sensor chip is made by silicon base 101, and the sensing element on diaphragm 110 and the diaphragm 110 is arranged on the silicon base, and except that peripheral part, diaphragm 110 is located at the whole central area of silicon base 101 with form of film.The foil gauge 105a-105d, plain conductor 103 and the terminals 104a-104d that are made by diffused resistor form Wheatstone bridge circuit 113.
Fig. 8 is the circuit diagram of expression according to Fig. 7 Wheatstone bridge circuit 113.As shown in the drawing, the foil gauge 105a-105d that is made by diffusion resistance is connected with plain conductor 103 respectively.Terminals 104a-104d is located between each foil gauge.Terminals 104a links to each other with power supply (hot side), and terminals 104c connect " " (low potential side).So, realize changes in resistance among the foil gauge 105a-105d by the distortion of diaphragm among Fig. 7 110, the magnitude of voltage between terminals 104b and the 104d changes.The change of pressure can be measured by the change that detects voltage.
Simultaneously, sensor chip 200 is fixed on the base 111 such as vycol (TM) class.Sensor chip 200 is sealed in the shell with the silicon sealing liquid.Base 111 provides through hole 112, in order to vacuumizing.Stick sensor chip 200, through hole 112 is capped.Silicon sealing liquid (not shown) is retained on the diaphragm 110.Sensor element on the diaphragm 110 (each element all comprises Wheatstone bridge circuit 113) and outfield insulation.Therefore, through the silicon sealing liquid, the variation of pressure is delivered to sensor element.
Summary of the invention
The pressure transducer of representing above need carry out meticulous pattern to silicon base to be handled, and forming described diaphragm and diffused resistor, and this pressure transducer makes by making semi-conductive process, and that described process must be considered is dustproof fully.But, even existing toilet provides the dustproof means, still have trace metal impurities and enter wafer, perhaps at the described impurity of generation midway of process.As a result, this metallic impurity may cause the fluctuation of sensor output.
In general, when making,, realize to get rid of influence to device etc. by trap metals impurity in wafer manufacturing process such as classes of semiconductors devices such as MOSFET.This is called as air-breathing.According to different principles, it can be divided into EG (outside air-breathing) method and IG (inner air-breathing) method.The EG method is to make chip back surface coarse with methods such as sand millings, and impurity is collected in coarse surface.The IG method is the deposition by oxygen, causes many microdefects in wafer inside, and impurity is trapped in the microdefect.
But the back side with most of silicon base of semiconductor pressure sensor etching that the foil gauge structure is set on diaphragm is to form described diaphragm.For this reason, it is air-breathing promptly to use EG method and IG method to carry out, and when forming described diaphragm, air-breathing center can be reduced to some extent.Thereby, be difficult to abundant trap impurity, and need other air-breathing processing.It is different with different wafer (at the bottom of naked substrate, SOI (silicon on the insulator) substrate, the epitaxial base etc.) that to also have a problem be effect.
Proposition of the present invention is exactly in order to address this problem.The object of the present invention is to provide a kind of semiconductor pressure sensor, wherein, be difficult to take place the fluctuation of sensor output.
According to the present invention, a kind of semiconductor pressure sensor comprises: the silicon base 1 of band diaphragm 10, and described diaphragm produces distortion with pressure; Foil gauge 5a, 5b, 5c, 5d, they are located on the diaphragm 10, and are formed by diffused resistor; The PN junction zone, it is located near foil gauge 5a, 5b, 5c, the 5d, is added to reverse biased.
Described PN junction zone can be made up of silicon base 1 and the interface that is located between the diffusion layer 8 in the silicon base 1.
Can be provided with many to foil gauge 5a, 5b, 5c, 5d.
A plurality of foil gauge 5a, 5b, 5c, 5d can form Wheatstone bridge circuit.
The PN junction zone only can be located among the foil gauge 5c, step in the favour phase in the middle of the noble potential terminals 4a and electronegative potential terminals 4c of bridge diagram, a side of potential difference (PD) greatly be arranged with the substrate current potential.
Description of drawings
Fig. 1 is the top view of the expression embodiment of the invention 1 semiconductor pressure sensor;
Fig. 2 A is the sectional view of getting along A-A ' line among Fig. 1;
Fig. 2 B is the sectional view of getting along B-B ' line among Fig. 1;
Fig. 3 is the top view of the expression embodiment of the invention 2 semiconductor pressure sensors;
Fig. 4 is the top view of the expression embodiment of the invention 3 semiconductor pressure sensors;
Fig. 5 is the top view of the expression embodiment of the invention 4 semiconductor pressure sensors;
Fig. 6 A, 6B and 6C are the top views of the expression embodiment of the invention 5 semiconductor pressure sensors;
Fig. 7 is the skeleton view of the conventional semiconductor pressure sensor of expression;
Fig. 8 is the circuit diagram that is illustrated in the Wheatstone bridge that forms on the diaphragm of Fig. 7.
Embodiment
Below will describe each preferred embodiment of the present invention in detail.
The present inventor carries out various experiments, and research and development do not have the semiconductor pressure sensor of output pulsation.As a result, the inventor finds: the fluctuation of sensor output is to be caused by the Fe in a large amount of metallic impurity (iron) atom.Find promptly that also the Fe atom in the sensor chip is pulled to such as the such PN junction of diffused resistor, cause to produce leakage current and change resistance value.If the metallic impurity of representing with the Fe atom exist with the form of active Si (silicon), will occur making easily the interval of band to narrow down with the situation of excited electrons.In addition, when introducing such as Na (sodium) ion that moves under the condition that at high temperature adds to bias voltage, can promote electronic motion, this can cause fluctuation.
Therefore, the condition of sensor output pulsation is as follows: there are the metallic impurity such as the Fe atom in (1); (2) exist such as the sodion that moves; (3) temperature is 125 ℃ or higher; (4) add to bias potential.Under the situation that satisfies these four conditions, just produce described fluctuation.
Yet, in CZ (the cutting krousky) wafer of common usefulness, contain the Fe atom hardly.When forming device in wafer, the Fe atom is considered to enter in the wafer.When manufacturing installation, iron and SUS (alloy that is difficult for contamination) are used to all parts, even a little pincers folder is also made with SUS.So, in various processes, think that iron atom is adhered on the wafer in various thermal treatments, and be diffused into wafer inside.Certainly, in general, before the thermal treatment of wafer, can carry out meticulous purification in smelting furnace, be difficult but will remove fully.For the Na atom also is like this.They might invade for example people's skin surface and perspiration from all places.It is difficult removing fully.
Therefore, when the inventor has the semiconductor pressure sensor of the gettering layer that is used for trap metals impurity in research and development, considered the above-mentioned fact.
[embodiment 1]
Fig. 1 is the planimetric map of the expression embodiment of the invention 1 semiconductor pressure sensor.As shown in Figure 1, sensor chip 20 is made by n type silicon base 1.Silicon base 1 is except peripheral part, and whole central area is made up of film 10.Diaphragm 10 is provided with the foil gauge 5a-5d that made by P type diffused resistor, by P
+Lead portion 6, plain conductor 3 and metal terminals 4a-4d that the type diffused resistor forms.With this, form Wheatstone bridge circuit by above-mentioned each parts.When silicon base 1 is the substrate of n type, by thermal diffusion or the diffused resistor that forms by boron ion implantation etc.
Fig. 2 A is the sectional view along A-A ' line of Fig. 1, and Fig. 2 is the sectional view along B-B ' line of Fig. 1.Shown in Fig. 2 A, the first type surface of silicon base 1 is provided with the foil gauge 5a that made by p type diffused layer, by the P near foil gauge 5a
+The lead portion 6 that the type diffusion layer is made, by near the P of lead portion 6
+The gettering layer 8 that the type diffusion layer is made.
On the first type surface of silicon base 1, be provided with by SiO
2The layer dielectric film of making 2.Plain conductor 3, terminals etc. are set on layer heat insulating lamella 2, and they form the part of Wheatstone bridge circuit.Lead portion 6 is electrically connected with foil gauge 5a.In addition, lead portion 6 is connected with plain conductor 3 by set through hole electrode 7 in the layer heat insulating lamella 2.Have, shown in Fig. 2 B, gettering layer 8 is connected with plain conductor 3 by the through hole electrode 9 that is located in layer heat insulating lamella 2 again.By terminals 4c reverse biased is added to gettering layer 8.
Therefore, in the present embodiment, gettering layer 8 is located near the foil gauge 5a-5d, and it has PN reverse bias current potential.So the metallic impurity in the silicon base 1 (Fe atom, Na atom etc.) are captured to the PN junction zone.Like this, prevented from foil gauge 5a-5d, to grow change in resistance and leakage current.
[embodiment 2]
Fig. 3 is the top view of the expression embodiment of the invention 2 semiconductor pressure sensors.Gettering layer 8 has been made into to be as shown in FIG. latticed layout.Because P
+Contact area between type gettering layer and the n type silicon base 1 increases, and that is to say that the PN junction zone enlarges, so inspiratory effects makes moderate progress.
[embodiment 3]
Fig. 4 is the top view of the expression embodiment of the invention 3 semiconductor pressure sensors.As shown in Figure 4, only gettering layer 8 is set partly in the periphery of foil gauge 5a-5d.Though spread all over the first type surface of silicon base 1 in Fig. 1 and 3 gettering layer 8 is set, this structure increases leakage current, thereby the power consumption of entire chip is increased.So gettering layer 8 is located at the periphery of foil gauge 5a-5d partly, just as in the present embodiment.Certainly, each gettering layer is electrically connected with terminals 4c by through hole electrode 9, and any gettering layer is all added to the PN reverse biased.
In addition, in Fig. 4,, also can on silicon base 1, plain conductor be set, replace connecting by diffusion layer though each gettering layer connects with same diffusion layer.Have, though the layout of gettering layer 8 is made into mesh shape, the present invention also comprises the gettering layer layout of not making mesh shape again, than as in Example 1.
[embodiment 4]
Fig. 5 is the top view of the expression embodiment of the invention 4 semiconductor pressure sensors.As shown in Figure 5,8 of gettering layers be located at foil gauge 5c and 5d peripheral near " " that side.Metallic impurity are positive ions such as iron, thus easily they are moved to the part that the substrate current potential is had big reverse biased, just " " over there sensor element.If as top said, be provided with more than required gettering layer 8, will cause some problems, for example leakage current increases.Therefore, by " " that side (low potential side) is provided with minimum required gettering layer, can prevent that the power consumption of entire chip from increasing.
In addition, though the layout of gettering layer 8 is made latticed, the present invention also comprises and do not make latticed gettering layer layout, than as in Example 1.
[embodiment 5]
Fig. 6 A, 6B and 6C are the top views of the expression embodiment of the invention 5 semiconductor pressure sensors.In Fig. 6 A, 6B and 6C, gettering layer has a plurality of long and narrow patterns, they with acute angle towards foil gauge.Discovery can be with the edge of Fe atom drawing to diffused resistor, just PN junction zone.Therefore, if shown in image pattern 6A, 6B and the 6C like that, the layout of gettering layer 8 is done so that the PN junction zone greater than foil gauge, that is resultful.
Have as described among five embodiment illustratedly, the present invention can capture the metallic impurity in the silicon base, by being located at the effect in the PN junction zone in the described diaphragm, avoids producing leakage current.
Claims (5)
1. a semiconductor pressure sensor is characterized in that, comprising:
The silicon base (1) of band diaphragm (10), described diaphragm produces distortion with pressure;
Foil gauge (5a, 5b, 5c, 5d), they are located on the diaphragm (10), and are formed by diffused resistor;
The PN junction zone, it is located near the foil gauge (5a, 5b, 5c, 5d), is added to reverse biased, wherein
Described PN junction zone is made up of described silicon base (1) and the interface that is located between the diffusion layer (8) in the silicon base (1);
Described diffusion layer (8) is located near the described foil gauge (5a, 5b, 5c, 5d) partly.
2. semiconductor pressure sensor according to claim 1 is characterized in that, wherein:
A plurality of foil gauges (5a, 5b, 5c, 5d) are set.
3. semiconductor pressure sensor according to claim 2 is characterized in that, wherein:
Described a plurality of foil gauge (5a, 5b, 5c, 5d) forms Wheatstone bridge circuit.
4. semiconductor pressure sensor according to claim 1 is characterized in that, wherein:
Described PN junction zone only is located on the periphery of foil gauge (5c), middle at the noble potential terminals (4a) and the electronegative potential terminals (4c) of Wheatstone bridge circuit, with the substrate current potential side of potential difference (PD) is greatly arranged.
5. semiconductor pressure sensor according to claim 1 is characterized in that, wherein:
Described diffusion layer (8) is combined to form by a plurality of long and narrow patterns, it with acute angle towards foil gauge (5a, 5b, 5c, 5d).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09964399A JP4812146B2 (en) | 1998-04-08 | 1999-04-07 | Data compression method, compressed data decompression method, compressed data transmission method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1334918A CN1334918A (en) | 2002-02-06 |
| CN1147719C true CN1147719C (en) | 2004-04-28 |
Family
ID=35453472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB998161896A Expired - Fee Related CN1147719C (en) | 1999-04-07 | 1999-02-15 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1147719C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102472678B (en) * | 2009-07-24 | 2014-04-23 | 罗姆股份有限公司 | Semiconductor pressure sensor, pressure sensor device, electronic device, and manufacturing method of semiconductor pressure sensor |
| CN107644611B (en) | 2016-07-22 | 2020-04-03 | 京东方科技集团股份有限公司 | OLED display device and pressure touch control driving method thereof |
-
1999
- 1999-02-15 CN CNB998161896A patent/CN1147719C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1334918A (en) | 2002-02-06 |
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Granted publication date: 20040428 Termination date: 20140215 |