CN114765103A - Plasma processing apparatus - Google Patents

Abstract

The invention provides a plasma processing apparatus. The plasma processing apparatus includes a plurality of plasma processing chambers (S2-S6) for performing plasma processing on a base material (X), a tray (Y) for holding the base material (X) in a standing state, and a lifting mechanism (10) for continuously conveying the tray (Y) to the plurality of plasma processing chambers (S2-S6), and can continuously perform plasma processing even on a base material which is difficult to wind around a roller.

Description

Plasma processing device

technical field

The present invention relates to a plasma processing apparatus for producing, for example, a separator for a fuel cell.

Background technique

As such a plasma processing apparatus, Patent Document 1 discloses a so-called roll-to-roll apparatus in which a base material wound around a feed roll is fed out, a film is formed by plasma treatment, and a roll is used for The take-up roll winds the film-formed substrate.

Such a roll-to-roll plasma processing apparatus has the advantages of high processing speed and high production efficiency because it can perform continuous film formation processing.

However, it is difficult to apply the above-described roll-to-roll apparatus when forming a film on a base material that is difficult to wind on a roll, such as a base material with irregularities or a thick base material.

Patent Document 1: Japanese Patent Laid-Open Publication No. 2019-117773.

SUMMARY OF THE INVENTION

The present invention has been made in order to solve the above-mentioned problems, and its main purpose is to realize continuous plasma treatment of even a substrate that is difficult to be wound around a roll.

That is, the present invention provides a plasma processing apparatus comprising: a plurality of plasma processing chambers for plasma processing a substrate; a tray for holding the substrate in an upright state; and an elevating mechanism for moving the substrate Trays are continuously delivered to the plurality of plasma processing chambers.

According to the plasma processing apparatus thus constituted, since the tray holding the substrate is continuously conveyed to the plurality of plasma processing chambers by the elevating mechanism, continuous film formation can be performed even if the substrate is difficult to be wound around the roll. .

Preferably, the plurality of plasma processing chambers are communicated with each other, and a differential exhaust chamber is provided between each of the plasma processing chambers.

According to this configuration, by connecting a plurality of plasma processing chambers, continuous conveyance of the trays can be realized, and at the same time, each plasma processing chamber can be maintained at a desired degree of vacuum.

In order to simplify the elevating mechanism, it is preferable that the elevating mechanism includes: a rope spanning the plurality of plasma processing chambers, on which the tray is hung; move between the plurality of plasma processing chambers.

Preferably, the plasma processing apparatus further includes a conveying mechanism, a plurality of the trays are arranged on the conveying mechanism, and the multiple trays are sequentially conveyed to the rope.

According to such a configuration, the plurality of trays can be automatically fed out in sequence, and the plurality of substrates held in the plurality of trays can be continuously formed into a film in one fell swoop, thereby further improving the efficiency.

As a method for realizing the automatic delivery of the trays, for example, the conveying mechanism has an endless belt that sends the trays to the ropes, and the trays are dropped from the edge of the endless belts, and are arranged on the edge of the endless belt. The hook portion on the tray hangs on the rope, and the tray is suspended from the rope.

Preferably, the plasma processing chamber includes: a plasma cleaning chamber, for performing plasma cleaning on the substrate; an ion implantation chamber, for implanting carbon ions into the substrate; and a first film-forming chamber, on the substrate A DLC film is formed on one side of the substrate; a second film-forming chamber is used to form a DLC film on the other side of the substrate; and a hydrophilic treatment chamber is used to perform a hydrophilic treatment on the substrate with oxygen plasma and the lifting mechanism transports the tray to the plasma cleaning chamber, the ion implantation chamber, the first film forming chamber, the second film forming chamber and the hydrophilic treatment chamber in sequence.

According to this configuration, since the tray holding the substrate in the erected state is transported to the plasma cleaning chamber, ion implantation chamber, first film formation chamber, second film formation chamber, and hydrophilic treatment chamber, each chamber Plasma treatment can be performed on both sides of the substrate, so that the DLC thin film can be efficiently formed on the substrate.

As a more specific embodiment for performing plasma treatment on both sides of a substrate, the plasma cleaning chamber, the ion implantation chamber, and the hydrophilic treatment chamber are sandwiched between the substrates, respectively. At least one pair of antennas is arranged at the position of the chamber to generate plasma.

effect of invention

According to this invention comprised in this way, even if it is a base material which is difficult to wind up on a roll, plasma processing can be performed continuously.

Description of drawings

FIG. 1 is a schematic diagram showing the configuration of a plasma processing apparatus in this embodiment.

FIG. 2 is a schematic diagram showing the configuration of the plasma processing apparatus in this embodiment.

FIG. 3 is a schematic diagram showing the structure of the tray in the present embodiment.

FIG. 4 is a schematic diagram showing the configuration of the conveying mechanism in the present embodiment.

FIG. 5 is a schematic diagram showing the configuration of a plasma processing apparatus in another embodiment.

FIG. 6 is a schematic diagram showing the configuration of a plasma processing apparatus in another embodiment.

Description of reference numerals

100…Plasma treatment equipment

X…Substrate

Y...tray

Ya…Hook Department

S1...Pallet delivery room

S2…plasma cleaning chamber

S3...Ion implantation chamber

S4...First film forming chamber

S5...Second film forming chamber

S6…Hydrophilic treatment chamber

S7…Pallet storage room

S8…differential exhaust chamber

10…Lifting mechanism

P…attracting agencies

2…Antenna

3…Heater

11…Ropes

12…Conveyor mechanism

121…Endless Belt

13…Rolls

Detailed ways

An embodiment of the plasma processing apparatus of the present invention will be described below with reference to the accompanying drawings.

The plasma processing apparatus of the present embodiment is a continuous film formation apparatus capable of continuously forming films on a plurality of substrates. The following description will be given by taking the formation of a gas barrier film having acid and alkali corrosion resistance on a substrate as an example. Used in the manufacture of separators for fuel cells, etc. In addition, the base material is, for example, an aluminum substrate or the like, and the gas barrier film is, for example, a DLC film that has conductivity and suppresses the permeation of sulfuric acid water that causes corrosion. However, the base material and the film to be formed on the base material are not limited to the following embodiments, and may be changed according to circumstances.

As shown in FIGS. 1 and 2 , the plasma processing apparatus 100 holds the substrate in a standing state on the tray Y, while conveying the substrate X together with the tray Y to a plurality of plasma processing chambers S2 to S6 . In addition, the standing state referred to here is preferably a state along the vertical direction, but is not necessarily limited to this state, and may be a state inclined from the vertical direction. Further, as shown in FIG. 3 , the tray Y is in the shape of a frame, and the plurality of substrates X are suspended and held by the frame in the vertical and horizontal directions.

Specifically, as shown in FIGS. 1 and 2 , the plasma processing apparatus 100 includes a tray delivery chamber S1, a plasma cleaning chamber S2, an ion implantation chamber S3, a first film formation chamber S4, a second film formation chamber S5, a hydrophilic The processing chamber S6, the tray storage chamber S7, and the lift mechanism 10 for conveying the base material X and the tray Y to each chamber are provided.

The tray delivery chamber S1 accommodates a plurality of trays Y, and is a chamber for sequentially delivering these trays Y to each processing chamber described later. This tray delivery chamber S1 is evacuated by suction means P such as a vacuum pump, and is kept at a predetermined degree of vacuum.

Along with the tray Y sent out from the tray sending chamber S1, the substrate X held on the tray Y is sent into the plasma cleaning chamber S2, which is a processing chamber for performing plasma cleaning on the substrate X. Specifically, in the plasma cleaning chamber S2, at least a pair of antennas 2 are arranged at positions sandwiching the substrate X. In this embodiment, these paired inductive coupling antennas 2 are two groups, arranged side by side along the conveying direction . Then, by applying high-frequency power from a high-frequency power source (not shown) to these antennas 2 through an integrator (not shown), and supplying argon gas as a cleaning gas into the chamber, the surface of the substrate X is Inductively coupled discharge plasma including argon ions is generated near the back surface. One surface (hereinafter simply referred to as the surface) and the other surface (hereinafter referred to as the back surface) of the substrate X are cleaned by this argon plasma.

Along with the tray Y sent out from the plasma cleaning chamber S2, the substrate X held on the tray Y is sent into the ion implantation chamber S3, which is a processing chamber for implanting carbon ions into the substrate X. This ion implantation forms nuclei (like the roots of hair, so to speak) on the substrate X to improve the adhesiveness of the DLC coating described later. Specifically, in the ion implantation chamber S3, at least one pair of antennas 2 are provided at positions sandwiching the substrate X. In this embodiment, these pairs of inductive coupling antennas 2 are two groups, which are arranged side by side along the conveying direction . High-frequency power from a high-frequency power supply (not shown) is applied to these antennas 2 through an integrator (not shown), and a carbon compound gas such as methane as a raw material gas is supplied into the room, whereby the substrate X is formed. Inductively coupled discharge plasma containing carbon ions is generated near the surface and back of the ion. Then, a negative DC voltage or a negative pulse voltage from a bias power supply (not shown) is applied to the substrate X, and carbon ions are implanted into the front and back surfaces of the substrate X to form an adhesion that contributes to the improvement of the DLC coating. Compatible nucleus.

Together with the tray Y sent out from the ion implantation chamber S3, the substrate X held on the tray Y is sent into the first film-forming chamber S4, which is located on one surface (surface) of the substrate X. The processing chamber where the DLC coating is formed. Specifically, in the first film forming chamber S4, one or more antennas 2 are provided on the surface side of the substrate X, and in this embodiment, five inductively coupled antennas 2 are provided side by side in the conveying direction. On the other hand, the heater 3 is provided on the back surface of the base material X. As shown in FIG.

Then, by applying high-frequency power from a high-frequency power source (not shown) to the antenna 2 through an integrator (not shown), and supplying a mixed gas of nitrogen, methane, and acetylene into the room as a raw material gas, the Inductively coupled discharge plasma including carbon ions is generated near the surface of the substrate X. At this time, in order to make the DLC film conductive, the surface of the base body of the base material X is heated to, for example, 150 to 400° C. by the above-mentioned heater 3 . Then, a negative DC voltage or a negative pulse voltage from a bias power supply (not shown) is applied to the substrate X, and the substrate X is further heated by the heater 3 or the ion energy in the plasma, so that the substrate X is further heated. A conductive DLC film is formed on the surface of X.

Along with the tray Y sent out from the first film-forming chamber S4, the substrate X held on the tray Y is sent into the second film-forming chamber S5, which is located on the other side of the substrate X ( Backside) a processing chamber where the DLC film is formed. Specifically, in the second film forming chamber S5, one or more antennas 2 are provided on the back surface of the substrate X, and in this embodiment, five inductively coupled antennas 2 are provided side by side along the conveying direction. On the other hand, the heater 3 is provided on the surface side of the base material X. As shown in FIG.

In addition, a high-frequency power from a high-frequency power supply (not shown) is applied to the above-mentioned antenna 2 through an integrator (not shown), and a mixed gas such as nitrogen, methane, and acetylene is supplied into the room as a raw material gas. As a result, inductively coupled discharge plasma including carbon ions is generated in the vicinity of the back surface of the substrate X. At this time, in order to make the DLC film conductive, the surface of the base body of the base material X is heated to, for example, 150 to 400° C. by the above-mentioned heater 3 . Then, a negative DC voltage or a negative pulse voltage from a bias power supply (not shown) is applied to the substrate X, and the substrate X is further heated by the heater 3 or the ion energy in the plasma, and the substrate X is A conductive DLC film is formed on the back of the

Together with the tray Y sent out from the second film-forming chamber S5, the substrate X held on the tray Y is sent into the hydrophilic treatment chamber S6, which performs hydrophilic treatment on the substrate X and imparts a base material. Material X hydrophilic processing chamber. Specifically, in the hydrophilic treatment chamber S6, at least one pair of antennas 2 are provided at positions sandwiching the substrate X, and in this embodiment, one set of these paired inductive coupling antennas 2 is provided. Then, high-frequency power from a high-frequency power supply (not shown) is applied to these antennas 2 by an integrator (not shown), and oxygen gas is supplied into the chamber, so that the surface and the back surface of the substrate X are generated near the surface and the back surface of the substrate X. Inductively coupled discharge plasma of oxygen ions. By this oxygen plasma, one surface and the back surface of the substrate X are subjected to hydrophilic treatment.

Along with the tray Y sent out from the hydrophilic treatment chamber S6, the substrates X held on the tray Y are sent into the tray storage chamber S7, which is a chamber for storing them. This tray storage chamber S7 is evacuated by suction means P such as a pump, and a predetermined degree of vacuum is maintained.

The tray delivery chamber S1, the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5, the hydrophilic treatment chamber S6, and the tray storage chamber S7 communicate with each other, and the plasma cleaning A differential exhaust chamber S8 exists between the chamber S2 and the ion implantation chamber S3, between the ion implantation chamber S3 and the first film formation chamber S4, and between the second film formation chamber S5 and the hydrophilic treatment chamber S6. This differential exhaust chamber S8 is exhausted by suction means P1 such as a common pump, for example. And, all these chambers are communicated through a slit (not shown) through which the tray Y can pass, whereby the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5 and the hydrophilic The processing chamber S6 is differentially exhausted. Therefore, all of the plasma processing chambers S2 to S6 can be maintained at a predetermined degree of vacuum without providing a gate valve or the like between the chambers.

The lift mechanism 10 continuously transports the tray Y into the plurality of plasma processing chambers S2 to S6. Here, the lift mechanism 10 transports the tray Y to the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5, and the hydrophilic treatment chamber S6 in this order, and more specifically, is sent from the tray The chamber S1 is transported to the tray storage chamber S7.

Specifically, as shown in FIG. 4 , the elevating mechanism 10 includes a rope 11 spanning across the plurality of plasma processing chambers S1 to S6, and a motor ( not shown) and other driving sources.

Here, as shown in FIG.2 and FIG.4, the hook part Ya for hooking the rope 11 of the tray Y of this embodiment is provided in the upper end part, for example, and can be hung on the rope 11.

The rope 11 is a rope hooked by the hook portion Ya of the tray Y, and is made of, for example, metal, glass fiber, carbon fiber, etc., and here is a stainless steel rope.

In the present embodiment, the rope 11 is stretched across the respective chambers from the tray delivery chamber S1 to the tray storage chamber S7, and after moving from the tray delivery chamber S1 to the tray storage chamber S7 above the respective chambers, the ropes 11 are then routed to the tray storage chamber S7 of each chamber. The lower part moves from the tray storage chamber S7 to the tray delivery chamber S1, and rotates around these chambers.

Further, as shown in FIG. 4 , the plasma processing apparatus 100 of the present embodiment includes a conveying mechanism 12 on which a plurality of trays Y are arranged side by side, and these trays Y are sequentially conveyed to the rope 11 .

A plurality of trays Y are placed on the conveying mechanism 12, and these trays Y are also conveyed to the rope 11 in turn, and specifically, for example, a pair of rollers 13 and an endless belt 121 wound around the rollers 13 are provided.

The relative positional relationship between the conveying mechanism 12 and the rope 11 is set so that the tray Y is suspended from the rope 11 when the tray Y is dropped from the edge of the endless belt 121 and the hook part Ya of the tray Y is hooked on the rope 11 .

To be more specific, when the tray Y placed on the endless belt 121 and facing the rope 11 passes the apex of the roller 13 in front of which the endless belt 121 is wound, it starts to descend gradually along the surface of the roller 13 to become A leaning state that leans forward. And the rope 11 and the endless belt 121 are arrange|positioned so that the hook part Ya of the tray Y may hang on the rope 11 before the tray Y falls.

In addition, the plasma processing apparatus 100 of the present embodiment is further provided with a carry-out mechanism (not shown) that sequentially receives the trays Y from the rope after the film formation processing.

This carry-out mechanism has the same structure as that of the conveyance mechanism 12 shown in FIG. 4 , and receives the tray Y by the reverse operation of the conveyance mechanism 12 described above.

That is, such a carry-out mechanism has, for example, a pair of rollers and an endless belt wound around these rollers. Then, the tray Y sent by the rope 11 is put on the endless belt and lifted up, and the hook part Ya of the tray Y is disengaged from the rope 11, and the tray Y is collected.

With such a configuration, the plurality of trays Y placed on the conveying mechanism 12 are sent out to the rope 11, and are automatically moved to the rope 11 in sequence. After that, the rope 11 is moved by a driving source such as a motor (not shown), and the rope 11 is sequentially moved. It is automatically transported to each of the above-mentioned plasma processing chambers S2 to S6.

Then, a negative DC voltage or a negative pulse voltage (bias voltage) from the above-described bias power supply (not shown) is applied to the rope 11 , and the bias voltage passes through the rope 11 and the tray Y suspended from the rope 11 Applied to substrate X.

According to the plasma processing apparatus 100 of the present embodiment configured in this way, since the tray Y holding the substrate X can be continuously conveyed to the plurality of plasma processing chambers S2 to S6 by the elevating mechanism 10, even if the substrate X is difficult to roll up , and continuous film formation can also be performed. Of course, it goes without saying that the plasma processing apparatus 100 can be applied to the substrate X which is not difficult to roll up.

In addition, since the plurality of plasma processing chambers S2 to S6 are communicated with each other, and each processing chamber is differentially exhausted, by connecting the plurality of plasma processing chambers S2 to S6, the tray Y can be continuously conveyed, and at the same time , the plasma processing chambers S2 to S6 can be maintained at a desired degree of vacuum.

In addition, since the lift mechanism 10 is constituted by the ropes 11 spanning across the plurality of plasma processing chambers S2 to S6, and the tray Y can be hung on the ropes 11, the lift mechanism 10 can have a simple structure.

In addition, since the conveying mechanism 12 sequentially sends out the plurality of trays Y to the rope 11, the feeding of the plurality of trays Y can be automated, and the plurality of substrates X held in the plurality of trays Y can be continuously formed into films at one stroke, which further improves the efficiency.

In addition, since the conveying mechanism 12 has the endless belt 121 for feeding the tray Y to the rope 11, the tray Y is dropped from the edge of the endless belt 121, the hook part Ya provided on the tray Y is hung on the rope 11, and the tray Y is suspended from the rope 11, therefore, the automatic feeding of the tray Y can be realized by a simple configuration.

In addition, the tray Y holding the substrate X in the upright state is transported to the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5, and the hydrophilic treatment chamber S6, because the The plasma cleaning chamber S2, the ion implantation chamber S3, and the hydrophilic treatment chamber S6 are provided with a pair of antennas 2 so as to sandwich the substrate X, so that plasma processing can be performed on both sides of the substrate X in each chamber , DLC coatings can be formed more efficiently than before.

The present invention is not limited to the above-described embodiments.

For example, in the above-mentioned embodiment, the rope 11 was explained as a stainless steel rope, but when the rope 11 is made of a conductive material such as metal or carbon fiber, since a bias voltage is applied to the base material X through the rope 11 Therefore, the same magnitude of bias voltage can be simultaneously applied to the plurality of substrates X held in the respective trays Y.

Conversely, the cord 11 can also be made of a non-conductive material such as glass cord or the like. In this case, as shown in FIG. 5 , for example, a conductive member D such as a pantograph may be provided in each of the plasma processing chambers S2 to S6 in advance, and a bias voltage may be applied to the substrate X through the conductive member D. In addition, in order to apply a bias voltage to the base material X at an appropriate timing, as shown in FIG. 5 , the hook portion Ya may be elongated in the conveying direction.

With this configuration, it is possible to apply bias voltages of different magnitudes to the substrate X in each of the plasma processing chambers S2 to S6. Since a bias voltage suitable for the treatment process in each of the plasma treatment chambers S2 to S6 can be applied to the substrate X, the degree of freedom in the film formation process can be improved, and a higher quality film can be formed.

In addition, in the above-described embodiment, the ropes 11 are provided so as to pass above and below the plasma processing chambers S2 to S6 , but the arrangement of the ropes 11 is not limited to this. For example, as shown in FIG. 6 , the ropes 11 may be arranged. It moves back and forth between the respective plasma processing chambers S2 to S6 above the plasma processing chambers S2 to S6.

In addition, the base material X is not limited to aluminum, and may have at least one metal among alloys such as nickel (Ni), iron (Fe), magnesium (Mg), titanium (Ti), or stainless steel containing these metals.

Further, the gas barrier film may be formed using not only those methods described in the above-described embodiments, but also, for example, a plasma CVD method, a vacuum evaporation method, a sputtering method, an ion plating method, and the like.

Needless to say, the present invention is not limited to the above-described embodiments, and various other modifications are possible within a range that does not deviate from the purpose of the invention.

Claims (7)

1. A plasma processing device, characterized in that, comprising: Multiple plasma treatment chambers for plasma treatment of substrates; a tray to hold the substrate in an upright position; and an elevating mechanism that continuously transports the trays to the plurality of plasma processing chambers. 2 . The plasma processing apparatus of claim 1 , wherein the plurality of plasma processing chambers communicate with each other, and a differential exhaust chamber is provided between each of the plasma processing chambers. 3 . 3. The plasma processing apparatus of claim 1, wherein The lifting mechanism has: a rope extending across the plurality of plasma processing chambers on which the tray is hung; and A drive source moves the rope between the plurality of plasma processing chambers. 4 . The plasma processing apparatus according to claim 1 , further comprising a conveying mechanism, wherein a plurality of the trays are provided on the conveying mechanism, and the plurality of the trays are sequentially conveyed to the rope. 5 . 5. The plasma processing apparatus of claim 4, wherein the conveying mechanism has an endless belt that conveys the tray to the rope, The tray is suspended from the rope by the tray being dropped from the edge of the endless belt, and the hook portion provided on the tray is hung on the rope. 6. The plasma processing apparatus of claim 1, wherein The plasma processing chamber includes: a plasma cleaning chamber, which performs plasma cleaning on the substrate; an ion implantation chamber, which injects carbon ions into the substrate; and a first film-forming chamber, which is located on one side of the substrate A DLC film is formed on the upper surface; a second film-forming chamber is used to form a DLC film on the other side of the substrate; and a hydrophilic treatment chamber is used to perform a hydrophilic treatment on the substrate by using oxygen plasma, The lifting mechanism transports the tray to the plasma cleaning chamber, the ion implantation chamber, the first film forming chamber, the second film forming chamber and the hydrophilic treatment chamber in sequence. 7. The plasma processing apparatus of claim 6, wherein The plasma cleaning chamber, the ion implantation chamber and the hydrophilic treatment chamber are respectively provided with at least a pair of antennas for generating plasma in the chambers at positions sandwiching the substrate.

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