[go: up one dir, main page]

CN114763292A - Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method - Google Patents

Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method Download PDF

Info

Publication number
CN114763292A
CN114763292A CN202110046650.XA CN202110046650A CN114763292A CN 114763292 A CN114763292 A CN 114763292A CN 202110046650 A CN202110046650 A CN 202110046650A CN 114763292 A CN114763292 A CN 114763292A
Authority
CN
China
Prior art keywords
resistor
buffer layer
mol
layer
sintering aid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110046650.XA
Other languages
Chinese (zh)
Other versions
CN114763292B (en
Inventor
朱立文
黄意舜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Huake Electronic Co ltd
Original Assignee
Dongguan Huake Electronic Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Huake Electronic Co ltd filed Critical Dongguan Huake Electronic Co ltd
Priority to CN202110046650.XA priority Critical patent/CN114763292B/en
Publication of CN114763292A publication Critical patent/CN114763292A/en
Application granted granted Critical
Publication of CN114763292B publication Critical patent/CN114763292B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

The invention provides a sintering aid for a buffer layer, a resistor comprising the buffer layer and a resistor manufacturing method. The sintering aid for the buffer layer comprises a boron barium zinc silicon aluminum vanadium series glass material. The invention also provides a resistor containing the buffer layer, and the buffer layer contains the boron barium zinc silicon aluminum vanadium glass material, so that the adhesive force between the resistor layer and the substrate can be improved by virtue of the buffer layer clamped between the substrate and the resistor layer, the deformation of the resistor layer can be further avoided, and the resistor can show good instant load, resistance tolerance and resistance temperature coefficient. The invention also provides a manufacturing method of the resistor, and the manufacturing method has the advantage of improving the production cost benefit.

Description

Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method
Technical Field
The invention relates to a sintering aid, in particular to a sintering aid for a wafer resistor. The invention also relates to a chip resistor and a manufacturing method thereof.
Background
Chip resistors (chip resistors) are commonly used to limit current or reduce voltage by printing thick metal film conductors on an alumina ceramic substrate and coating a protective layer on the outer layer. With the technological progress, the circuit board assembly becomes more complex, and the requirements for interlayer adhesion, instantaneous load (STOL), resistance tolerance (COV%) and temperature coefficient of resistance of each layer in the chip resistor are all more strict.
U.S. patent No. 6943662 provides the above-mentioned method for directly forming the resistive layer on the substrate, but has a problem that the resistive layer is easily deformed; in addition, it discloses the use of silver palladium electrode paste, which has a problem of high cost. Both U.S. patent application publication No. 20110089025 and U.S. patent No. 5680092 provide vapor deposition processes, but these processes require expensive materials and processing equipment, and are also complicated and less expensive to produce.
In summary, a process that is both cost-effective for producing chip resistors and is not easily deformed by the resistor layer still needs to be developed.
Disclosure of Invention
In order to solve the above problems, the present invention provides a sintering aid for a buffer layer, comprising a first boron barium zinc silicon aluminum vanadium series glass material, wherein the first boron barium zinc silicon aluminum vanadium series glass material comprises B2O3、BaO、ZnO、SiO2、Al2O3And V2O5And with B2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3Is 14.01 to 34 mol%, BaO is 1.5 to 8.44 mol%, ZnO is 20.06 to 34.6 mol%, SiO2In an amount of 23 to 49.11 mol%, Al2O3In an amount of 4.9 to 7.60 mol%, and V2O5Is contained in an amount of 0.77 to 1.85 mol%.
The first B-Ba-Zn-Si-Al-V glass material may be B2O3-BaO-ZnO-SiO2-Al2O3-V2O5The manner of (c) is shown.
The sintering aid for the buffer layer disclosed by the invention contains specific components and specific content ranges thereof, so that when the buffer layer using the sintering aid as a main component is applied to a resistor, the adhesion of the resistor layer to a substrate can be improved by virtue of the buffer layers clamped between the substrate and the resistor layer except for the resistor layer, the probability of damaging the resistor layer and the production yield of the resistor layer can be reduced when the resistance value of the resistor layer is corrected by laser cutting, the risk of layer cracking caused by the deformation of the resistor layer or the stress difference between different layers (such as the substrate and the resistor layer) is further avoided, and the resistor has good instant load, resistance tolerance and resistance temperature coefficient.
Preferably, in the first boro-barium-zinc-silicon-aluminum-vanadium glass frit, B is used2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3Is 17 to 34 mol%, BaO is 1.5 to 7.5 mol%, ZnO is 22 to 34.6 mol%, SiO is2In an amount of 23 to 45 mol%, Al2O3In an amount of 4.9 to 7.2 mol%, and V2O5Is contained in an amount of 0.9 to 1.85 mol%.
More preferably, B is added to the first B-Ba-Zn-Si-Al-V glass frit2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3Is 19.88 to 31.39 mol%, the content of BaO is 2.55 to 6.45 mol%, the content of ZnO is 24.30 to 32.61 mol%, SiO2In an amount of 26.50 to 41.47 mol% and Al2O3In an amount of 5.25 to 6.80 mol%, and V2O5Is contained in an amount of 1.09 to 1.72 mol%.
In some embodiments, the first borobarium zinc silicoaluminophosphate-based frit has a glass softening temperature (Ts) of 586 ℃ to 739 ℃.
Preferably, the glass softening temperature of the first borobarium zinc silicoaluminophosphate vanadium series glass frit is 586 ℃ to 717 ℃, for example: 586 deg.C, 590 deg.C, 600 deg.C, 620 deg.C, 640 deg.C, 660 deg.C, 680 deg.C, 700 deg.C, 710 deg.C or 717 deg.C; more preferably, the glass softening temperature of the first boron barium zinc silicon aluminum vanadium series glass material is 608 ℃ to 695 ℃.
Preferably, the average particle size of the first boron barium zinc silicon aluminum vanadium series glass material is 1 micron to 5 microns.
The invention also provides a resistor, which comprises a composite laminated structure and two side electrodes, wherein the two side electrodes are respectively arranged on two opposite side surfaces of the composite laminated structure; and the composite laminated structure sequentially comprises a substrate, a buffer layer and a resistance layer, wherein the buffer layer is formed by a composition for the buffer layer, and the composition for the buffer layer comprises the sintering aid for the buffer layer, a filler, a first resin and a first organic solvent.
By arranging the buffer layer, the deformation amount of the graph generated after the printed resistor layer graph is sintered is reduced, namely the deformation amount is less than 5%, and the adhesive force between the resistor layer and the substrate can be improved by the buffer layer clamped between the substrate and the resistor layer under the condition of reducing the addition amount of the glass frit of the resistor layer, so that the problem of larger resistor tolerance is avoided, the instant load is improved, and the productivity and the reliability of the resistor are effectively improved.
The sintering aid for the buffer layer forms a liquid phase in the sintering process, so that the bonding strength of a contact interface between the resistance layer and the buffer layer can be improved, and the difference between the thermal expansion and sintering shrinkage of the resistance layer and the substrate can be regulated and controlled.
In some embodiments, the filler comprises any one of aluminum oxide, zinc oxide, silicon oxide, titanium oxide, or a combination thereof.
In some embodiments, the first resin comprises any one or a combination of an ethyl cellulose-based resin and an acrylic resin. The composition for the cushion layer can be screen-printed by using the first resin.
In some embodiments, the first organic solvent comprises: terpineol, ether, ester or their combination. The first organic solvent of the present invention acts as a diluent.
In some embodiments, the substrate is a ceramic substrate.
In some embodiments, in the composition for a buffer layer, the weight ratio of the sintering aid for a buffer layer to the filler is 0.4: 0.6 to 0.75: 0.25, but not limited thereto; preferably, the weight ratio of the sintering aid for the buffer layer to the filler is 0.45: 0.55 to 0.75: 0.25, e.g., 0.45: 0.25, 0.55: 0.45, 0.60: 0.45, or 0.65: 0.35. more preferably, the weight ratio of the sintering aid for the buffer layer to the filler is 0.50: 0.50 to 0.70: 0.30. the invention controls the difference between the thermal expansion coefficient and the sintering shrinkage of the resistance layer and the substrate by adjusting the weight ratio of the resistance layer and the substrate, avoids the deformation of the resistance layer and the falling off of the resistance layer, ensures that the composite laminated structure of the resistor has good interlayer adhesion, and shows low resistance, good resistance tolerance, resistance temperature coefficient and instant load.
In some embodiments, the content of the buffer layer sintering aid is 25.6 to 48 wt% based on the total weight of the buffer layer sintering aid, the filler, the first resin and the first organic solvent in the buffer layer composition; the filler content is 16 to 38.4 weight percent; the content of the first resin is 1 to 2 weight percent; and the content of the first organic solvent is 30 to 40 weight percent.
Preferably, in the composition for a buffer layer, the content of the buffer layer sintering aid is 29 to 48 weight percent based on the total weight of the buffer layer sintering aid, the filler, the first resin and the first organic solvent, for example: 29, 31, 33, 35, 37, 39, 41, 43, 45, 47, or 48 weight percent; the filler is present in an amount of 16 to 35 weight percent, for example: 16, 18, 20, 22, 24, 26, 28, 30, 32, 34, or 35 weight percent; the content of the first resin is 1 to 2 weight percent, for example: 1 weight percent, 1.2 weight percent, 1.4 weight percent, 1.6 weight percent, 1.8 weight percent, or 2 weight percent; and the content of the first organic solvent is 30 to 40 weight percent, for example: 30 weight percent, 32 weight percent, 34 weight percent, 36 weight percent, 38 weight percent, or 40 weight percent.
In some embodiments, the resistive layer is formed from a resistive paste, and the resistive paste includes a metal powder, a sintering aid for the resistive layer, a second resin, and a second organic solvent.
Preferably, the second resin comprises any one or a combination of an ethyl cellulose-based resin and an acrylic resin; more preferably, the second resin is the same as the first resin.
Preferably, the second organic solvent comprises: any one or combination of terpineol, ether and ester; more preferably, the second organic solvent is the same as the first organic solvent.
The sintering aid for the resistor layer comprises a second boron barium zinc silicon aluminum vanadium series glass material, and B2O3-BaO-ZnO-SiO2-Al2O3-V2O5The manner of (c) is shown.
In some embodiments, in the second borobarium zinc silicoaluminophosphate glass frit, the second borobarium zinc silicoaluminophosphate glass frit comprises B2O3、BaO、ZnO、SiO2、Al2O3And V2O5And with B2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3In an amount of 26.70 mol% to 29.1 mol%, and a BaO content of 10.1mol% to 12.64 mol%, ZnO content of 15.39 mol% to 19.9 mol%, SiO2In an amount of 37.2 to 42.36 mol%, Al2O3In an amount of 2.68 to 3 mol%, and V2O5Is contained in an amount of 0.22 to 0.6 mol%.
Preferably, in the second borobarium zinc silicoaluminophosphate-based glass frit, the second borobarium zinc silicoaluminophosphate-based glass frit comprises B2O3、BaO、ZnO、SiO2、Al2O3And V2O5And with B2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3Is 27 to 29.1 mol%, BaO is 10.1 to 12.2 mol%, ZnO is 16.1 to 19.9 mol%, SiO is2In an amount of 37.2 to 41.5 mol%, Al2O3In an amount of 2.73 to 3 mol%, and V2O5Is contained in an amount of 0.28 to 0.6 mol%.
More preferably, B is added to the second B-Ba-Zn-Si-Al-V glass frit2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3Is 27.40 to 28.79 mol%, BaO is 10.48 to 11.92 mol%, ZnO is 16.69 to 19.26 mol%, SiO2In an amount of 37.98 to 40.89 mol% and Al2O3In an amount of 2.77 to 2.95 mol%, and V2O5Is contained in an amount of 0.33 to 0.55 mol%.
In some embodiments, the second borobarium zinc silicoaluminophosphate frit has a glass softening temperature of 565 ℃ to 690 ℃.
Preferably, the second borobarium zinc silicoaluminophosphate vanadium series glass frit has a glass softening temperature of 565 ℃ to 675 ℃, for example: 565 deg.C, 570 deg.C, 580 deg.C, 590 deg.C, 600 deg.C, 610 deg.C, 620 deg.C, 630 deg.C, 640 deg.C, 650 deg.C, 660 deg.C, 670 deg.C or 675 deg.C; more preferably, the second borobarium zinc silicon aluminum vanadium series glass material has a glass softening temperature of 585 ℃ to 655 ℃. The invention can reduce the shrinkage deformation and residual stress of the resistance layer in the sintering process by adjusting the temperature difference of the glass softening points of the sintering aid for the buffer layer and the sintering aid for the resistance layer.
According to the invention, the second boron barium zinc silicon aluminum vanadium series glass material in the sintering aid for the resistance layer has a specific glass softening point range, so that the resistance layer can be further prevented from deforming and falling off, the resistance layer is ensured to have good adhesive force, and low resistance, good resistance tolerance, resistance temperature coefficient and instant load are shown.
Preferably, the second boron barium zinc silicon aluminum vanadium series glass material is powder; more preferably, the average particle size of the second boron barium zinc silicon aluminum vanadium series glass material is 1 micron to 5 microns.
In some embodiments, the metal powder comprises copper and nickel, and the weight ratio of copper to nickel is 0.35: 0.65 to 0.8: 0.2. preferably, the weight ratio of copper to nickel is 0.35: 0.65 to 0.65: 0.35, e.g., 0.40: 0.60, 0.45: 0.55, 0.50: 0.50, 0.55: 0.45, or 0.60: 0.40. the resistance layer of the invention does not adopt silver-palladium alloy resistance paste, so the production cost can be effectively reduced.
In some embodiments, the metal powder comprises copper powder and nickel powder, or a copper-nickel alloy powder.
According to the present invention, controlling the weight ratio of copper to nickel can further avoid an excessively high temperature coefficient of resistance.
In some embodiments, in the electrode paste, a total weight of the metal powder, the sintering aid for the resistive layer, the second resin, and the second organic solvent is 67 to 79 wt% based on the metal powder; the content of the sintering aid for the resistance layer is 2 to 6 weight percent; the content of the second resin is 1 to 3 weight percent; and the content of the second organic solvent is 17 to 25 weight percent.
Preferably, in the electrode paste, based on the total weight of the metal powder, the sintering aid for the resistive layer, the second resin, and the second organic solvent, the content of the metal powder is 67 to 79% by weight, for example: 67, 70, 73, 76, or 79 weight percent; the content of the sintering aid for the resistance layer is 2.5 to 5.5 weight percent, for example: 2.5, 3, 3.5, 4, 4.5, 5, or 5.5 weight percent; the content of the second resin is 1 to 3 weight percent, for example: 1, 1.5, 2, 2.5 or 3 weight percent; and the second organic solvent is present in an amount of 17 to 25 weight percent, for example: 17 weight percent, 19 weight percent, 21 weight percent, 23 weight percent, or 25 weight percent.
According to the present invention, the content of the sintering aid for the resistance layer is controlled to prevent the resistance from rising and to prevent the resistance layer from falling.
Preferably, the metal powder is spherical powder.
Preferably, the average particle size of the metal powder is 0.3 to 10 microns. When the particle diameter of the metal powder is in the above range, the stacking density of the metal powder and the operability of screen printing can be improved.
In some embodiments, the composite layered structure further comprises a back electrode and a front electrode; the back electrode is arranged on the bottom surface of the substrate; the area of the top surface of the buffer layer is smaller than that of the top surface of the substrate, the area of the top surface of the resistor layer is smaller than that of the top surface of the buffer layer, the front electrodes are arranged on the top surface of the substrate and the top surface of the buffer layer, and the top surfaces of the front electrodes and the top surface of the resistor layer are aligned to form a coplanar surface.
Preferably, the substrate, the buffer layer, the resistive layer, and the back electrode have top surface areas that are the same as bottom surface areas.
In other embodiments, the resistor further includes a protection layer, and the protection layer is disposed on a top surface (i.e., an outermost surface) of the composite layered structure to protect the resistor layer, where the top surface of the composite layered structure refers to a surface formed by the top surface of the front electrode and the top surface of the resistor layer.
The invention further provides a manufacturing method of the resistor, which comprises the following steps: step (a): forming a buffer layer on the surface of a substrate; step (b): forming a resistance layer on the surface of the buffer layer, wherein the buffer layer is clamped between the substrate and the resistance layer to obtain a composite laminated structure; a step (c): arranging one side electrode on each of two opposite sides of the composite laminated structure to obtain a resistor blank; and a step (d): sintering the resistance blank to obtain the resistance; wherein the buffer layer is formed by a composition for the buffer layer, and the composition for the buffer layer comprises the sintering aid for the buffer layer, a filler, a first resin and a first organic solvent.
Preferably, the buffer layer formed in step (a) and the resistor layer formed in step (b) are formed by a screen printing method, and the screen printing method has higher production efficiency than a vapor deposition method.
Preferably, the step (a), the step (b) and the step (c) may each comprise a drying step, and the drying temperature is 100 ℃ to 150 ℃.
Preferably, the drying time of each of the step (a), the step (b) and the step (c) is 10 to 15 minutes.
Preferably, the sintering temperature of the step (d) is 880 ℃ to 920 ℃.
Preferably, the sintering time of step (d) is 10 to 15 minutes.
Preferably, before step (a), a back electrode is formed on the bottom surface of the substrate. Preferably, the composite layered structure comprises the back electrode, the substrate, the buffer layer, the resistive layer and a front electrode; the top surface area of the buffer layer is less than the top surface area of the substrate, the top surface area of the resistive layer is less than the top surface area of the buffer layer, and step (b) further comprises: and forming the front electrode on the top surface of the substrate and the top surface of the buffer layer, wherein the top surface of the front electrode is level with the top surface of the resistance layer to form a coplanar surface.
Preferably, after the resistor blank is sintered in the step (d), a protective layer is further formed on the top surface of the resistor blank or the composite laminated structure, and then a sintering step and an electrode electroplating step are performed to form an outer electrode layer, so as to obtain the resistor.
In some embodiments, the material of the protective layer comprises a material of glass. Preferably, the sintering temperature of the protective layer is 400 ℃ to 500 ℃. Preferably, the sintering time of the protective layer is 10 minutes to 15 minutes.
In some embodiments, the material of the protective layer comprises an epoxy-based material. Preferably, the thermal curing temperature of the protective layer is 150 ℃ to 300 ℃. Preferably, the heat curing time of the protective layer is 10 minutes to 30 minutes.
Preferably, the electrode electroplating step is to perform copper, nickel and/or tin electroplating on the surfaces of the side electrodes, the front electrode and the back electrode; in some embodiments, the electrode plating step may precede copper plating of the surfaces of the side electrodes, the front electrodes, and the back electrodes to form copper outer electrode layers; then nickel electroplating is carried out on the surface of the copper outer electrode layer to form a nickel outer electrode layer; and tin electroplating is carried out on the surface of the nickel outer electrode layer to form a tin outer electrode layer, namely a group of three-layer structured outer electrodes formed by the copper outer electrode layer, the nickel outer electrode layer and the tin outer electrode layer are coated on the outer surfaces of the side electrode, the front electrode and the back electrode. The electrode of the invention does not adopt noble metals such as silver, palladium and the like as a limit, thereby being beneficial to reducing the production cost.
In the present specification, the average particle diameter refers to a particle diameter corresponding to a cumulative percentage of particle diameter distribution of 50%, that is, D, in the statistics of percentage of particle diameter distribution of the particles50。
In conclusion, the resistor of the invention has the advantages that the buffer layer is additionally arranged, so that the adhesive force between the resistor layer and the substrate can be increased, the deformation of the resistor layer can be avoided, the resistor has good instant load, resistor tolerance and resistor temperature coefficient, the production cost benefit of the resistor is further improved, and the market competitiveness is achieved.
Drawings
Fig. 1 is a schematic cross-sectional view of a resistor according to the present invention.
Fig. 2A and 2B are top views of the resistor.
Detailed Description
The technical solutions of the present invention will be described in detail below in order to clearly understand the technical features, objects, and advantages of the present invention, but the present invention is not limited to the practical scope of the present invention.
The present invention will be described in detail with reference to the following examples and comparative examples, and those skilled in the art can easily understand the advantages and effects of the present invention without departing from the spirit of the present invention.
Example 1: resistance (RC)
As shown in fig. 1, the resistor 1 includes a composite layered structure 10, two side electrodes 20 and a protection layer 30, wherein the two side electrodes 20 are respectively disposed on two opposite sides 100 of the composite layered structure 10, and the protection layer 30 is disposed on a top surface 110 of the composite layered structure 10; the composite layered structure 10 includes two back electrodes 120, a substrate 130, a buffer layer 140, a resistive layer 150, and two front electrodes 160; the two back electrodes 120 are symmetrically disposed on the bottom surface 131 of the substrate 130, the area of the top surface 141 of the buffer layer 140 is smaller than the area of the top surface 132 of the substrate 130, the area of the top surface 151 of the resistor layer 150 is smaller than the area of the top surface 141 of the buffer layer 140, the two front electrodes 160 are further symmetrically disposed on the top surface 132 of the substrate 130 and the top surface 141 of the buffer layer 140, and the top surfaces 161 of the two front electrodes 160 are aligned with the top surface 151 of the resistor layer 150 to form a common plane. The buffer layer 140 is formed of a buffer layer composition including a buffer layer sintering aid, a filler, a first resin, and a first organic solvent.
Example 2: method for manufacturing resistor
1. Preparing a composite laminated structure:
(1) preparing a back electrode: printing a back electrode on the bottom surface of the alumina substrate by a screen printing method, wherein the material of the back electrode is copper, and drying the back electrode for 10 to 15 minutes at the temperature of between 100 and 150 ℃.
(2) Preparing a buffer layer: the composition for the buffer layer is prepared by mixing the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent, is printed on the top surface of the alumina substrate by a screen printing mode, and is dried for 10 to 15 minutes at 100 to 150 ℃ to form the buffer layer.
(3) Preparing a resistance layer: mixing metal powder, sintering aid for the resistance layer, second resin and second organic solvent to prepare resistance paste, printing the resistance paste on the top surface of the buffer layer by a screen printing mode, and drying for 10-15 minutes at 100-150 ℃ to form the resistance layer.
(4) Preparing a front electrode: printing the front electrode on the top surface of the alumina substrate and the top surface of the buffer layer in a screen printing mode, wherein the front electrode is made of copper, the top surface of the front electrode is flush with the top surface of the resistance layer to form a horizontal coplanar surface, and drying for 10 to 15 minutes at the temperature of between 100 and 150 ℃.
2. Preparing a side electrode:
the opposite two sides of the composite laminated structure (namely the sides formed by the sides of the front electrode, the substrate and the back electrode) are respectively coated with side electrodes in a rolling way, the material of the side electrodes is copper, so as to form a resistance blank, and then the resistance blank is sintered together for 10 to 15 minutes at 880 to 920 ℃.
3. Preparing a protective layer:
after the resistance layer is cut by laser to adjust the resistance value, the protective layer is printed on the coplanar formed by the front electrode and the resistance layer in a screen printing mode, namely the outermost surface of the composite laminated structure, so that the resistance layer is prevented from being oxidized and vulcanized due to the contact with the outside air; wherein the protective layer is made of epoxy resin, the thermosetting temperature of the protective layer is 150-300 ℃, and the thermosetting time is 10-30 minutes.
4. Preparing an outer electrode layer: carrying out copper electroplating on the surfaces of the side electrode, the front electrode and the back electrode to form a copper outer electrode layer; then, carrying out nickel electroplating on the surface of the copper outer electrode layer to form a nickel outer electrode layer; and tin electroplating is carried out on the surface of the nickel outer electrode layer to form a tin outer electrode layer, namely a group of outer electrodes with a three-layer structure formed by the copper outer electrode layer, the nickel outer electrode layer and the tin outer electrode layer are coated on the outer surfaces of the side electrode, the front electrode and the back electrode.
Test example 1: comparison of resistance efficacy Using sintering aid formulations for different buffer layers
Each group was made as a resistor as described in example 2, but without a protective layer; wherein, the Ts point is measured before the process is started, and the deformation of the resistance layer is observed after the sintering is completed, and the other efficacy tests (i.e. adhesion, resistivity, COV%, TCR and STOL) are all performed after the electroplating of the external electrode, and are further explained as follows:
composition for buffer layer
The formula of the sintering aid for each group of buffer layers is shown in Table 1, and all the fillers are Al2O3The first resins are all ethyl cellulose, and the first organic solvents are all terpineol. Based on the total weight of the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent, the components are in the same proportion: the content of the sintering aid for the buffer layer is 38.40 weight percent; the filler content was 25.60 weight percent; the content of the first resin was 1.5 weight percent; and the content of the first organic solvent was 34.50 weight percent.
Table 1: sintering aid formula (unit: mol%) for each buffer layer
Figure BDA0002897549550000101
(II) resistance paste
The sintering aid for each set of resistance layer has the same formula, and comprises: b2O3Of 28.09 mol% and BaO11.20 mol% of ZnO, 17.98 mol% of SiO2Content of (3) 39.43 mol%, Al2O3Is 2.86 mol% and V2O5The content of (B) is 0.44 mol%. In the resistance paste, the total weight of the metal powder, the resistance layer sintering aid, the second resin and the second organic solvent is taken as a reference, and the components are in the same proportion as follows: the copper content was 43.80 weight percent; the content of nickel is 29.20 weight percent; the content of the sintering aid of the resistance layer is 4.00 weight percent; the content of the second resin was 2.00 weight percent; and the content of the second organic solvent was 21.00 weight percent; wherein the second resin is the same as the first resin, and the second organic solvent is the same as the first organic solvent.
(III) sintering temperature
When the end codes of all groups of labels are singular (namely N-1, N-3, N-5 and N-7, N is the number of the embodiment), the sintering temperature is 880 ℃; when the end codes of all groups of labels are even numbers (namely N-2, N-4, N-6 and N-8), the sintering temperature is 920 ℃.
(IV) efficacy testing
1. Glass softening point: the Ts of the sintering aid for each buffer layer was measured using a Thermomechanical thermal analyzer (TMA) according to the ASTM E1545 specification.
2. Amount of deformation of the resistive layer: calculation formula of deformation amount of resistance layer: [ (maximum width-minimum width)/maximum width ] × 100%, i.e., (. DELTA.W/W) × 100%, when the deformation amount of the resistive layer is greater than 5%, it is judged that the resistive layer is significantly deformed, as shown in FIG. 2A; when the deformation amount of the resistive layer is 5% or less, it is determined that the resistive layer is not deformed, for example, as shown in fig. 2B.
3. Adhesion force: the test was carried out according to the specification of ISO 2409, wherein the 0 th grade (ISO class 0) indicates "the cut edge was smooth and intact, and the coating film was not peeled off at all"; class 1 (ISO class 1) indicates "there is a small chip at the cut line intersection, with less than 5% of the total area peeled off"; class 2 (ISO class 2) indicates "small chips at both the edge and intersection of the cut line, with a spalled region of 5% to less than 15% of the total area"; class 3 (ISO class 3) indicates "the edge of the cut line, the small square, is partially or totally peeled off, the peeled off area occupying 15% to less than 35% of the total area"; class 4 (ISO class 4) indicates "the edge of the cut line, the small square, has partial or total peeling, and the peeled area occupies 35% to less than 65% of the total area"; and class 5 (ISO class 5) indicates "the edge of the dicing line, the small square is partially or totally peeled off, and the peeled off area occupies 65% or more of the total area".
4. Resistivity: the resistance was measured according to the standard of IEC 60115-1/JIS C5201-1, item 4.5.
5. Resistance tolerance (COV%): the standard deviation/mean resistance value of the resistor with a resistance tolerance greater than 3% will affect the yield of the resistor.
6. Temperature Coefficient of Resistance (TCR): TCR (+ -100 ppm/DEG C) measurement and calculation are carried out according to the specification of IEC 60115-1 item 4.8; wherein the test temperature is T1(25 ℃) to T2(155 ℃), R2 is the measured resistance value of T2 point, R1 is the measured resistance value of T1 point, and the calculation formula is TCR (ppm/° C) ═ R2-R1)/R1 × 1/(T2-T1). times.106. In addition, when the TCR exceeds the range of + -100 ppm/deg.C, the resistance stability of the resistor under changes in ambient temperature will be affected. Since the TCR of the commercial resistor can exceed +/-100 ppm/DEG C, whether the TCR is between +/-100 ppm/DEG C is not the basis for judging whether the resistor passes or fails in the invention.
7. Instantaneous load (Short-time overload, STOL): STOL measurements were made according to IEC 60115-1, article 4.13, and rated for 5-fold 5-second overload.
Table 2: ts, deformation, adhesion, resistivity, COV%, TCR, and STOL test results for each resistance
Figure BDA0002897549550000111
Figure BDA0002897549550000121
As is clear from the test results in Table 2, B in the buffer layer sintering aids of comparative examples 3-1 and 3-22O337.02 mol% or more and 34 mol% or more, and a BaO content of 0.63 mol% below 1.5 mol%, ZnO content 36.68 mol% above 34.6 mol%, SiO219.16 mol% or less and 23 mol% or less of Al2O3A content of 4.49 mol%, less than 4.9 mol%, and V2O5The content is 2.02 mol% or more and 1.85 mol% or more, so that it has a glass softening point of 565 ℃. Further, the resistance layers of comparative examples 3-1 and 3-2 were not subjected to the subsequent tests because of the problem of excessively large apparent deformation.
B in the Co-sintering agent for buffer layers of examples 3-1 and 3-22O314.01 mol% of BaO, 8.44 mol% of ZnO, 20.06 mol% of SiO249.11 mol% of Al2O3Content 7.60 mol%, and V2O5The content is 0.77 mol%, the glass softening point temperature is 739 ℃, and the content proportion and the softening point can ensure that the resistance layer can not deform, and the resistance layer structure can be obviously improved.
Finally, B of the sintering aid for buffer layers of examples 3-3 to 3-82O3Content of 17 mol% to 34 mol%, BaO content of 1.5 mol% to 7.5 mol%, ZnO content of 22 mol% to 34.6 mol%, SiO2The content is between 23mol percent and 45mol percent, Al2O3In an amount of 4.9 to 7.2 mol%, and V2O5The content is 0.9 mol% to 1.85 mol%, and the temperature of the glass softening point is 608 ℃ to 695 ℃, so that the deformation amount of the resistance layer is less than 5%, and the resistance layer has better adhesive force (all belonging to 0 th grade), and simultaneously has low resistance, good resistance tolerance, resistance temperature coefficient and instant load.
Test example 2: comparison of the Effect of resistance Using different weight ratios of sintering aid to Filler for buffer layers
Each group was made as a resistor as described in example 2, but without a protective layer; wherein, the Ts point is measured before the process is started, and the deformation of the resistance layer is observed after the sintering is completed, and the other efficacy tests (i.e. adhesion, resistivity, COV%, TCR and STOL) are all performed after the electroplating of the external electrode, and are further explained as follows:
composition for buffer layer
The formulation of the sintering aid for the buffer layer was the same as in examples 3-5 and 3-6: b is2O3The contents of the components were 25.67 mol%, the BaO contents were 4.48 mol%, the ZnO contents were 28.48 mol%, and SiO2The contents of all the components are 33.93 mol%, and Al2O3The contents are all 6.02 mol%, and V2O5The compositions were all 1.40 mol%, and the formulations of the compositions for a buffer layer are shown in Table 3, in which the filler was Al2O3The first resin is ethyl cellulose, and the first organic solvent is terpineol.
Table 3: composition formula (unit: weight percentage) for each buffer layer
Figure BDA0002897549550000122
Figure BDA0002897549550000131
(II) resistance paste: the same as in test example 1.
(III) sintering temperature: the same test example 1 was conducted except that the sintering temperature in examples 4 to 5 was 920 ℃.
(IV) efficacy testing: the test was carried out in the same manner as described in test example 1, and the test results are shown in Table 4.
Table 4: ts, deformation, adhesion, resistivity, COV%, TCR, and STOL test results for each resistor
Figure BDA0002897549550000132
As is clear from Table 4, the deformation amounts of the resistive layers of each set of resistors were less than 5% by using the sintering aid for the buffer layer of the present invention in examples 3-5, 3-6, and 4-1 to 4-5, and the instantaneous load, the resistance tolerance, and the temperature coefficient of resistance were good.
Further, compared to examples 4-5, since the weight ratio of the sintering aid for the buffer layer to the filler in examples 3-5, 3-6, and 4-1 to 4-4 is between 0.45: 0.55 to 0.75: 0.25, and the content of the sintering aid for the buffer layer is between 29 and 48 weight percent; the filler content is between 16 and 35 weight percent; the content of the first resin is between 1 weight percent and 2 weight percent; and the content of the first organic solvent is 30 to 40 weight percent, so that the adhesive force (all belonging to 0 th grade) can be better, and simultaneously, the low resistance, the good resistance tolerance, the resistance temperature coefficient and the instant load are displayed.
Test example 3: comparison of resistance efficacy with different filler types
Each group was made as a resistor as described in example 2, but without a protective layer; wherein, the Ts point is measured before the process is started, and the deformation of the resistance layer is observed after the sintering is completed, and the other efficacy tests (i.e. adhesion, resistivity, COV%, TCR and STOL) are all performed after the electroplating of the external electrode, and are further explained as follows:
composition for buffer layer
The conditions were the same for each group except that the filler type was different as shown in Table 5, and the description was as follows:
the formulation of the sintering aid for each group of buffer layers was the same as in examples 3-5 and 3-6: b is2O3The content was 25.67 mol%, the BaO content was 4.48 mol%, the ZnO content was 28.48 mol%, and SiO2All contents were 33.93 mol%, Al2O3The contents are all 6.02 mol%, and V2O5The contents were all 1.40 mol%.
The first resins of the respective groups were all ethyl cellulose, the first organic solvents were all terpineol, and the composition for the buffer layer was in the same proportions as in examples 3-5 and examples 3-6: the content of the sintering aid for the buffer layer is 38.40 weight percent based on the total weight of the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent; the filler content was 25.60 weight percent; the content of the first resin was 1.5 weight percent; and the content of the first organic solvent was 34.50 weight percent.
Table 5: kinds of fillers of each group
Figure BDA0002897549550000141
(II) resistance paste: the same as in test example 1.
(III) sintering temperature: the same as in test example 1.
(IV) efficacy testing: the test was carried out in the same manner as described in test example 1, and the test results are set forth in table 6.
Table 6: ts, deformation, adhesion, resistivity, COV%, TCR, and STOL test results for each resistance
Figure BDA0002897549550000142
Figure BDA0002897549550000151
The fillers of examples 3-5, 3-6, 5-1 to 5-6 are aluminum oxide, zinc oxide, silicon oxide and titanium oxide respectively, the deformation of the resistance layer is less than 5%, the adhesion is 0 th level, and the resistance is low, the resistance tolerance is good, the resistance temperature coefficient and the instant load are exhibited.
Test example 4: comparison of resistance efficiency without buffer layer
The comparative examples of the test were all without the buffer layer printed, and used different weight percentages of the sintering aid for the resistance layer, and the rest of the procedure was the same.
The formulation of the resistor paste is shown in table 7, in which the formulation of the sintering aid for the resistor layer is the same as in test example 1, the second resin is ethyl cellulose, and the second organic solvent is terpineol.
Table 7: resistance paste formula (unit: weight percentage)
Figure BDA0002897549550000152
(III) sintering temperature: the same as in test example 1.
(IV) efficacy testing: the test was carried out in the same manner as in test example 1, and the test results are shown in Table 8.
Table 8: deformation, adhesion, resistivity, COV%, TCR and STOL test results for each resistor
Figure BDA0002897549550000153
Figure BDA0002897549550000161
As can be seen from table 8, when the resistors were not provided with the buffer layer (i.e., comparative examples 6-1 and 6-2) and the content of the sintering aid for the resistive layer was 4 wt%, the adhesion test results were significantly poor, only of grade 3 or 4.
Further, in the same condition that no buffer layer is provided, when the sintering aid for the resistance layer is increased to 6 weight percent in comparative examples 6-3 and 6-4, the adhesion of the resistance layer is improved, but the resistance is increased by at least 3 times, the resistance tolerance is increased by about 2 times, and the temperature coefficient of resistance is increased by about 2 times.
Finally, when the content of the sintering aid for the resistive layers of comparative examples 6 to 5 and 6 to 6 reached 8 wt%, the adhesion test results were good, but the appearance deformation of the resistive layers was too large, and the subsequent tests were impossible.
Test example 5: comparison of resistance efficacy Using sintering aid ratios for different resistance layers
Each group was made as a resistor as described in example 2, but without the protective layer; wherein, the Ts point is measured before the process is started, and the deformation of the resistance layer is observed after the sintering is completed, and the other efficacy tests (i.e. adhesion, resistivity, COV%, TCR and STOL) are all performed after the electroplating of the external electrode, and are further explained as follows:
(one) composition for buffer layer:
the sintering aid for each group of buffer layers is the same as that used in examples 3-5 and examples 3-6: b is2O3The content was 25.67 mol%, the BaO content was 4.48 mol%, the ZnO content was 28.48 mol%, and SiO2All contents were 33.93 mol%, Al2O3The contents are all 6.02 mol%, and V2O5The contents were all 1.40 mol%.
In addition, all the fillers are Al2O3The first resins are all ethyl cellulose, the first organic solvents are all terpineol, and the proportion of the composition for the buffer layer is the same as that of the compositions of examples 3-5 and 3-6: based on the total weight of the sintering aid for the buffer layer, the filler, the first resin and the first organic solvent, the components are in the same proportion: the content of the sintering aid for the buffer layer is 38.40 weight percent; the filler content was 25.60 weight percent; the content of the first resin was 1.5 weight percent; and the content of the first organic solvent was 34.50 weight percent.
(II) resistance paste:
the formulation of the sintering aid for each set of the resistance layers is shown in table 9. Based on the total weight of the metal powder, the resistance layer sintering aid, the second resin and the second organic solvent, the metal powder, the resistance layer sintering aid, the second resin and the second organic solvent are in the same proportion: the copper content was 43.80 weight percent; the content of nickel is 29.20 weight percent; the content of the sintering aid of the resistance layer is 4.00 weight percent; the content of the second resin was 2.00 weight percent; the content of the second organic solvent is 21.00 weight percent; wherein the second resin is the same as the second resin, and the second organic solvent is the same as the first organic solvent.
Table 9: sintering aid formula (unit: mol%) for each resistance layer
Figure BDA0002897549550000162
Figure BDA0002897549550000171
(III) sintering temperature: the same as in test example 1.
(IV) efficacy testing: the test was conducted in the same manner as described in test example 1, and the test results are shown in Table 10, where Ts is the glass softening point of the sintering aid for the resistive layer.
Table 10: ts, deformation, adhesion, resistivity, COV%, TCR, and STOL test results for each resistance
Figure BDA0002897549550000172
As is clear from Table 10, B in the buffer layer sintering aids of examples 7 to 5 and examples 7 to 62O326.70 mol% of BaO, 12.64 mol% of ZnO, 15.39 mol% of SiO242.36 mol% of Al2O3Content 2.68 mol%, and V2O5The content is 0.22 mol%, and when the glass softening point is 690 ℃, the resistance layer has no deformation, and the adhesive force can reach grade 1 or grade 2.
Further, compared with examples 7-5 and 7-6, the examples 3-5, 3-6, 7-1 to 7-4 are due to B in the sintering aid for the buffer layer of examples 3-5, 7-62O327 mol% to 29.1 mol% of BaO, 10.1 mol% to 12.2 mol% of ZnO, 16.1 mol% to 19.9 mol% of SiO2The content is between 37.2 mol% and 41.5 mol%, Al2O3In an amount of 2.73 to 3 mol%, and V2O5The content is 0.28 mol% to 0.6 mol%, so that the adhesive force (all belonging to class 0) is better, and the low resistance, the good resistance tolerance, the temperature coefficient of resistance and the instant load are further exhibited.
Test example 6: resistance efficiency comparison of resistance layers with different copper-nickel ratios
Each group was made as a resistor as described in example 2, but without a protective layer; wherein, the Ts point is measured before the process is started, the deformation amount of the resistance layer is observed after sintering is finished, and other efficacy tests (i.e. adhesive force, resistivity, COV%, TCR and STOL) are carried out after the electroplating of the external electrode, and the following is further explained:
composition for buffer layer: the same as in examples 3-5 and examples 3-6.
(II) resistance paste:
the formulation of the sintering aid for each set of resistive layers was the same and was the same as in examples 3-5 and 3-6: b is2O3Has a content of 28.09 mol%, a content of BaO of 11.20 mol%, a content of ZnO of 17.98 mol%, and SiO2Content of (3) 39.43 mol%, Al2O3Is 2.86 mol% and V2O5The content of (B) is 0.44 mol%. The formulation of the resistive paste is shown in table 11, wherein the second resin is ethyl cellulose and the second organic solvent is terpineol.
Table 11: resistor paste formula (unit: weight percentage)
Figure BDA0002897549550000181
(III) sintering temperature: the same as in test example 1.
(IV) efficacy testing: the test was conducted in the same manner as described in test example 1, and the test results are shown in Table 12, where Ts is the glass softening point of the sintering aid for the resistive layer.
Table 12: ts, deformation, adhesion, resistivity, COV%, TCR, and STOL test results for each resistance
Figure BDA0002897549550000182
Figure BDA0002897549550000191
As is clear from table 12, the resistive layers of examples 3 to 5, 3 to 6, and 8 to 1 to 8 were not deformed and had suitable adhesion.
Further, from examples 3 to 5, 3 to 6, and 8 to 5 to 8, it can be seen that when the weight ratio of copper to nickel is between 0.35: 0.65 to 0.65: 0.35, and the content of the metal powder is 67 to 79 weight percent based on the total weight of the metal powder, the sintering aid for the resistor layer, the second resin and the second organic solvent, the temperature coefficient of resistance of the resistor can be obviously improved.
Test example 7: comparison of resistance efficacy of sintering aid addition amounts for different resistance layers
Each group was made as a resistor as described in example 2, but without the protective layer; wherein, the Ts point is measured before the process is started, the deformation amount of the resistance layer is observed after sintering is finished, and other efficacy tests (i.e. adhesive force, resistivity, COV%, TCR and STOL) are carried out after the electroplating of the external electrode, and the following is further explained:
composition for buffer layer: the same as in examples 3-5 and examples 3-6.
(II) resistance paste:
the formulation of the sintering aid for each set of resistive layers was the same as in examples 3-5 and 3-6: b is2O3Has a content of 28.09 mol%, a content of BaO of 11.20 mol%, a content of ZnO of 17.98 mol%, and SiO2Content of (3) 39.43 mol%, Al2O3Is 2.86 mol% and V2O5The content of (B) is 0.44 mol%. The formulation of the resistive paste is shown in table 13, wherein the second resin is ethyl cellulose and the second organic solvent is terpineol.
Table 13: resistor paste formula (unit: weight percentage)
Figure BDA0002897549550000192
Figure BDA0002897549550000201
(III) sintering temperature: the same as in test example 1.
(IV) efficacy testing: the test was conducted in the same manner as described in test example 1, and the test results are shown in Table 14, where Ts is the glass softening point of the sintering aid for the resistive layer.
Table 14: ts, deformation, adhesion, resistivity, COV%, TCR, and STOL test results for each resistor
Figure BDA0002897549550000202
As is clear from Table 14, in examples 9-1 and 9-2, the sintered aid for the resistive layer contained 6 wt% or more, the resistive layer was not deformed and the adhesion reached the 0 th level, but the resistivity was high and exceeded 4X 10 due to the increase of the glass component in the resistive layer-5Ω.cm。
Examples 9 to 7 and 9 to 8 contained 2% by weight of the sintering aid for the resistive layer, and the adhesion between the resistive layer and the buffer layer was lowered (level 1 or level 2) due to the low glass content in the resistive layer.
As can be seen from the above, when the content of the sintering aid for the resistance layer is 2.5 wt% to 5.5 wt% based on the total weight of the metal powder, the sintering aid for the resistance layer, the second resin and the second organic solvent, the adhesion between the resistance layer and the buffer layer can be further improved, and the resistivity can be further improved.
In summary, the present invention employs the buffer layer formed by the sintering aid for the buffer layer having specific components and contents thereof, so that the adhesion between the substrate and the resistor layer can be improved by the buffer layer interposed between the substrate and the resistor layer, and the deformation of the resistor layer can be further avoided, thereby enabling the resistor to exhibit good instantaneous load, resistance tolerance and resistance temperature coefficient.

Claims (15)

1. A sintering aid for a buffer layer, comprising a first boron barium zinc silicon aluminum vanadium series glass material, wherein the first boron barium zinc silicon aluminum vanadium series glass material comprises B2O3、BaO、ZnO、SiO2、Al2O3And V2O5And with B2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3In an amount of 14.01 mol% to34 mol%, BaO content of 1.5 mol% to 8.44 mol%, ZnO content of 20.06 mol% to 34.6 mol%, SiO2In an amount of 23 to 49.11 mol%, Al2O3In an amount of 4.9 to 7.60 mol%, and V2O5Is contained in an amount of 0.77 to 1.85 mol%.
2. A resistor comprises a composite laminated structure and two side electrodes, wherein the two side electrodes are respectively arranged on two opposite sides of the composite laminated structure; the composite laminated structure sequentially comprises a substrate, a buffer layer and a resistance layer; wherein the buffer layer is formed of a composition for a buffer layer, and the composition for a buffer layer comprises the sintering aid for a buffer layer according to claim 1, a filler, a first resin, and a first organic solvent.
3. The resistor of claim 2, wherein the first borobarium zinc silicoaluminophosphate-based frit has a glass softening temperature of 586 ℃ to 739 ℃.
4. The resistor of claim 2, wherein the first borobarium zinc silicoaluminophosphate frit has an average particle size of from 1 micron to 5 microns.
5. The resistor of claim 2, wherein the filler comprises any one of aluminum oxide, zinc oxide, silicon oxide, titanium oxide, or combinations thereof.
6. The resistor of claim 2, wherein the weight ratio of the buffer layer sintering aid to the filler is 0.4: 0.6 to 0.75: 0.25.
7. the resistor according to claim 2, wherein the buffer layer composition comprises 25.6 to 48 wt% of the buffer layer sintering aid, based on the total weight of the buffer layer sintering aid, the filler, the first resin, and the first organic solvent; the filler content is 16 to 38.4 weight percent; the content of the first resin is 1 to 2 weight percent; and the content of the first organic solvent is 30 to 40 weight percent.
8. The resistor of claim 2, wherein the resistive layer is formed from a resistive paste, and the resistive paste comprises a metal powder, a sintering aid for the resistive layer, a second resin, and a second organic solvent.
9. The resistor of claim 8, wherein the sintering aid for the resistive layer comprises a second boro-barium-zinc-silico-alumino-vanadium frit comprising B2O3、BaO、ZnO、SiO2、Al2O3And V2O5And with B2O3、BaO、ZnO、SiO2、Al2O3And V2O5Based on the total number of moles of B2O3In an amount of 26.70 to 29.1 mol%, BaO in an amount of 10.1 to 12.64 mol%, ZnO in an amount of 15.39 to 19.9 mol%, SiO2In an amount of 37.2 to 42.36 mol%, Al2O3In an amount of 2.68 to 3 mol%, and V2O5Is contained in an amount of 0.22 to 0.6 mol%.
10. The resistor of claim 9, wherein the second borobarium zinc silicoaluminophosphate-based frit has a glass softening temperature of from 565 ℃ to 690 ℃.
11. The resistor of claim 8, wherein the metal powder comprises copper and nickel, and a weight ratio of copper to nickel is 0.35: 0.65 to 0.8: 0.2.
12. the resistor according to claim 8, wherein the metal powder is contained in an amount of 67 to 79 wt% based on the total weight of the metal powder, the sintering aid for the resistive layer, the second resin, and the second organic solvent; the content of the sintering aid for the resistance layer is 2 to 6 weight percent; the content of the second resin is 1 to 3 weight percent; and the content of the second organic solvent is 17 to 25 weight percent.
13. The resistor of claim 8, wherein the metal powder has an average particle size of 0.3 microns to 10 microns.
14. A method for manufacturing a resistor comprises the following steps:
step (a): forming a buffer layer on the surface of a substrate;
step (b): forming a resistance layer on the surface of the buffer layer, wherein the buffer layer is clamped between the substrate and the resistance layer to obtain a composite laminated structure;
step (c): arranging a side electrode on each of two opposite sides of the composite laminated structure to obtain a resistor blank; and
step (d): sintering the resistance blank to obtain the resistance;
wherein the buffer layer is formed of a composition for a buffer layer, and the composition for a buffer layer comprises the sintering aid for a buffer layer according to claim 1, a filler, a first resin, and a first organic solvent.
15. The method of claim 14, wherein the sintering temperature of step (d) is 880 ℃ to 920 ℃ and the sintering time is 10 minutes to 15 minutes.
CN202110046650.XA 2021-01-14 2021-01-14 Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method Active CN114763292B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110046650.XA CN114763292B (en) 2021-01-14 2021-01-14 Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110046650.XA CN114763292B (en) 2021-01-14 2021-01-14 Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method

Publications (2)

Publication Number Publication Date
CN114763292A true CN114763292A (en) 2022-07-19
CN114763292B CN114763292B (en) 2023-09-08

Family

ID=82364290

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110046650.XA Active CN114763292B (en) 2021-01-14 2021-01-14 Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method

Country Status (1)

Country Link
CN (1) CN114763292B (en)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859637A (en) * 1987-12-17 1989-08-22 Ferro Corporation Lead-free U.V. absorbing glass
US5593722A (en) * 1992-12-22 1997-01-14 Nippondenso Co., Ltd. Method of producing thick multi-layer substrates
RU2076475C1 (en) * 1980-11-10 1997-03-27 Государственное научно-производственное предприятие "Исток" Thin-structure
JPH09275002A (en) * 1996-04-05 1997-10-21 Matsushita Electric Ind Co Ltd Thick film resistor, chip resistor using the same, and method of manufacturing the same
JPH10335115A (en) * 1997-05-30 1998-12-18 Tdk Corp Ceramics composite laminated component
JP2003257708A (en) * 2002-03-05 2003-09-12 Koa Corp Thick film thermistor element and its manufacturing method
CN1742347A (en) * 2002-11-21 2006-03-01 Tdk株式会社 Resistor paste, resistors and electronic components
CN102617137A (en) * 2012-03-28 2012-08-01 厦门松元电子有限公司 BaO-TiO2 lead-free Y5P capacitor dielectric material and preparation method for same
US20120247550A1 (en) * 2011-03-28 2012-10-04 Industry-Academic Cooperation Foundation, Yonsei University Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
CN107995783A (en) * 2016-10-26 2018-05-04 先丰通讯股份有限公司 Circuit board structure and manufacturing method thereof
CN108417290A (en) * 2018-02-28 2018-08-17 江苏国瓷泓源光电科技有限公司 A kind of solar cell aluminum paste and preparation method thereof
CN111028975A (en) * 2019-12-03 2020-04-17 南京汇聚新材料科技有限公司 Low-temperature coefficient resistor paste and preparation method and application thereof
TWI742979B (en) * 2020-12-31 2021-10-11 華新科技股份有限公司 Sintering aid for buffer layer, resistance including buffer layer and resistance manufacturing method

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2076475C1 (en) * 1980-11-10 1997-03-27 Государственное научно-производственное предприятие "Исток" Thin-structure
US4859637A (en) * 1987-12-17 1989-08-22 Ferro Corporation Lead-free U.V. absorbing glass
US5593722A (en) * 1992-12-22 1997-01-14 Nippondenso Co., Ltd. Method of producing thick multi-layer substrates
JPH09275002A (en) * 1996-04-05 1997-10-21 Matsushita Electric Ind Co Ltd Thick film resistor, chip resistor using the same, and method of manufacturing the same
JPH10335115A (en) * 1997-05-30 1998-12-18 Tdk Corp Ceramics composite laminated component
JP2003257708A (en) * 2002-03-05 2003-09-12 Koa Corp Thick film thermistor element and its manufacturing method
CN1742347A (en) * 2002-11-21 2006-03-01 Tdk株式会社 Resistor paste, resistors and electronic components
US20120247550A1 (en) * 2011-03-28 2012-10-04 Industry-Academic Cooperation Foundation, Yonsei University Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
CN102617137A (en) * 2012-03-28 2012-08-01 厦门松元电子有限公司 BaO-TiO2 lead-free Y5P capacitor dielectric material and preparation method for same
CN107995783A (en) * 2016-10-26 2018-05-04 先丰通讯股份有限公司 Circuit board structure and manufacturing method thereof
CN108417290A (en) * 2018-02-28 2018-08-17 江苏国瓷泓源光电科技有限公司 A kind of solar cell aluminum paste and preparation method thereof
CN111028975A (en) * 2019-12-03 2020-04-17 南京汇聚新材料科技有限公司 Low-temperature coefficient resistor paste and preparation method and application thereof
TWI742979B (en) * 2020-12-31 2021-10-11 華新科技股份有限公司 Sintering aid for buffer layer, resistance including buffer layer and resistance manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DONGSUN YEOM ET AL.: "A Thermocycler Using a Chip Resistor Heater and a Glass Microchip for a Portable and Rapid Microchip-Based PCR Device", MICROMACHINES, vol. 13, no. 339 *

Also Published As

Publication number Publication date
CN114763292B (en) 2023-09-08

Similar Documents

Publication Publication Date Title
CN101309874B (en) Lead-free and cadmium-free conductive copper thick film pastes
KR101892750B1 (en) chip resistor and fabricating method thereof
US7804677B2 (en) Electronic component and method for producing the same
US9799449B2 (en) Multilayered ceramic capacitor with improved lead frame attachment
KR100798255B1 (en) Electroconductive thick film composition, electrode formed therefrom and solar cell
EP2677523A2 (en) Method of manufacturing thick-film electrode
JP4645594B2 (en) Conductive paste and ceramic electronic component using the same
US6436316B2 (en) Conductive paste and printed wiring board using the same
JPS6254206B2 (en)
JPH0523519B2 (en)
WO2000060613A1 (en) Conductive paste, ceramic multilayer substrate, and method for manufacturing ceramic multilayer substrate
EP2155618A1 (en) Insulation paste for a metal core substrate and electronic device
JP2001307547A (en) Conductive composition and printed circuit board using the same
WO2004055836A1 (en) Resistive material, resistive element, resistor and method for manufacturing resistor
TWI742979B (en) Sintering aid for buffer layer, resistance including buffer layer and resistance manufacturing method
CN114763292A (en) Sintering aid for buffer layer, resistor comprising buffer layer and resistor manufacturing method
CN112673435B (en) Conductive thick film pastes for silicon nitride and other substrates
CN117238551A (en) NTC thermistor ruthenium electrode slurry and NTC thermistor thereof
JPH03134905A (en) Copper paste
JP2000182435A (en) Conductive paste and ceramic electronic components
JP3912671B2 (en) Thick film circuit board manufacturing method and thick film circuit board
CN114284665B (en) High-power microwave load sheet and preparation method thereof
JPH0494106A (en) Base metal composition for external electrode of chip-type lamination capacitor
JP3862119B2 (en) Resistance paste
JP2001023438A (en) Conductive paste and ceramic electronic component

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant