CN114759822B - Single-phase inverter control system of single-bipolar hybrid BCM control mode - Google Patents
Single-phase inverter control system of single-bipolar hybrid BCM control mode Download PDFInfo
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- CN114759822B CN114759822B CN202210540287.1A CN202210540287A CN114759822B CN 114759822 B CN114759822 B CN 114759822B CN 202210540287 A CN202210540287 A CN 202210540287A CN 114759822 B CN114759822 B CN 114759822B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. DC/AC converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a single bipolar mixed BCM controlControl mode single-phase inverter control system: comprises a modulation circuit, one side of which is electrically connected with a power supply V A The modulation circuit comprises four IGBT or MOSFET controllable semiconductor switch power devices, a load resistor Z is electrically connected between the four IGBT or MOSFET controllable semiconductor switch power devices, the four IGBT or MOSFET controllable semiconductor switch power devices are respectively and connected with a follow current filter circuit, and the load resistor Z is electrically connected with an LC filter; on the basis of ensuring that hysteresis control is realized to a soft switch, the invention realizes the characteristics of low loss, small volume and high power density by adopting the control of the unipolar BCM through the main body, avoids the zero crossing of frequency and inhibits high-frequency harmonic through the transition of the bipolar BCM, and has good frequency adaptability to load.
Description
Technical Field
The invention belongs to the technical field of unidirectional inverter control, and particularly relates to a single-phase inverter control system in a single-bipolar hybrid BCM control mode.
Background
Off-grid inverters supply power directly to an ac load, so the nature of the load can also have a significant impact on the operation of the inverter. In the face of loads with changeable properties, the off-grid micro inverter needs to have good load adaptability, reasonably cope with various load conditions, and can ensure normal and efficient operation of the off-grid micro inverter. A good micro-inverter should have the advantages of good stability, high reliability, high power density, low cost, and good output waveform quality.
The inverter widely uses an analog control circuit or an analog+digital hybrid control circuit, and main analog control strategies include voltage single loop control, peak-valley current control, current average value control and the like. Because of adopting hardware control, the circuit structure is more complex, the control reliability is low, and the time delay is high. The presence of the hardware control circuit increases the size of the control board. In addition, the control method of analog control is single, the control means realized by an analog circuit mainly takes PI control as a main part, and the control means with higher precision cannot be realized. In addition, the hardware circuit has the problems of aging and temperature drift caused by long service time, so that the control performance is reduced, and the circuit cannot work normally after a long time. It can be seen that the analog control method does not reach the desired level of performance. With the development of control chip technology, analog control methods are gradually replaced by digital control methods. Some typical digital control methods and their recent developments are listed below: dead beat control, state feedback control, repetitive control, fuzzy control, PID control. Common inverter control strategies are unipolar and bipolar. Unipolar modulation has a lower frequency characteristic and only one set of legs operates at high frequency, so the switching losses are smaller, but the frequency crosses zero at the load voltage zero crossing. The CCM mode frequency is adaptive, and the switching frequency is independent of the load current, but the conduction loss is large. The bipolar BCM modulation has very high frequency peak, very high overall frequency and large switching loss, and is not an ideal control mode; the bipolar CCM modulation frequency is higher, and the frequency self-adaption is realized; the unipolar CCM modulation frequency is low and the frequency is self-adaptive, but the low-frequency harmonic wave has long occurrence time and has great influence on waveform quality; the unipolar BCM modulation frequency is low, the proportion of the low-frequency part which cannot be filtered is small, the loss is low, and the unipolar BCM modulation frequency is an ideal modulation mode, so that a single-phase inverter control system with a single-bipolar hybrid BCM control mode is provided.
Disclosure of Invention
The present invention is directed to a single-phase inverter control system with a single-bipolar hybrid BCM control mode, which solves the above-mentioned problems.
In order to achieve the above purpose, the present invention provides the following technical solutions: a single-phase inverter control system of single-bipolar hybrid BCM control mode comprises a modulation circuit, wherein one side of the modulation circuit is electrically connected with a power supply V A The modulation circuit comprises four IGBT or MOSFET controllable semiconductor switch power devices, a load resistor Z is electrically connected between the four IGBT or MOSFET controllable semiconductor switch power devices, freewheel filter circuits are respectively connected to the four IGBT or MOSFET controllable semiconductor switch power devices, and an LC filter is electrically connected to the load resistor Z.
Preferably, the four IGBT or MOSFET controllable semiconductor switching power devices include an IGBT or MOSFET controllable semiconductor switching power device Q1, an IGBT or MOSFET controllable semiconductor switching power device Q2, an IGBT or MOSFET controllable semiconductor switching power device Q3, and an IGBT or MOSFET controllable semiconductor switching power device Q4, which are electrically connected.
Preferably, the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q1 is connected with the power supply V A The drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the power supply V A Is electrically connected with the positive electrode of the battery.
Preferably, the source of the IGBT or MOSFET controllable semiconductor switching power device Q1 is electrically connected to the drain of the IGBT or MOSFET controllable semiconductor switching power device Q4, and the source of the IGBT or MOSFET controllable semiconductor switching power device Q4 is electrically connected to the power supply V A Is electrically connected with the negative electrode of the battery.
Preferably, the source of the IGBT or MOSFET controllable semiconductor switching power device Q2 is electrically connected to the drain of the IGBT or MOSFET controllable semiconductor switching power device Q3, and the source of the IGBT or MOSFET controllable semiconductor switching power device Q3 is connected to the power supply V A Is electrically connected with the negative electrode of the battery.
Preferably, the IGBT or MOSFET controllable semiconductor switching power device Q1 and the IGBT or MOSFET controllable semiconductor switching power device Q4 which are connected in series and the IGBT or MOSFET controllable semiconductor switching power device Q2 and the IGBT or MOSFET controllable semiconductor switching power device Q3 which are connected in series are electrically connected to both ends of the load resistor Z, the IGBT or MOSFET controllable semiconductor switching power device Q1 and the IGBT or MOSFET controllable semiconductor switching power device Q4 which are connected in series are electrically connected to the positive electrode of the load resistor Z, and the IGBT or MOSFET controllable semiconductor switching power device Q2 and the IGBT or MOSFET controllable semiconductor switching power device Q3 which are connected in series are electrically connected to the negative electrode of the load resistor Z.
Preferably, the LC filter includes an inductor L and a capacitor C5, where the inductor L is electrically connected to the positive electrode of the load resistor Z, the capacitor C5 is connected in parallel with the load resistor Z, and two ends of the capacitor C5 are respectively electrically connected to the positive electrode and the negative electrode of the load resistor Z, and one end of the capacitor C5 is electrically connected between the load resistor Z and the inductor L.
Preferably, the IGBT or MOSFET controllable semiconductor switching power device Q1 is connected in parallel with a freewheel filter circuit formed by a parallel diode D1 and a capacitor C1, the diode D1 and the capacitor C1 are connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q1, the IGBT or MOSFET controllable semiconductor switching power device Q4 is connected in parallel with a freewheel filter circuit formed by a parallel diode D4 and a capacitor C4, and the diode D4 and the capacitor C4 are connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q4.
Preferably, the IGBT or MOSFET controllable semiconductor switching power device Q2 is connected in parallel with a freewheel filter circuit formed by a parallel diode D2 and a capacitor C2, the diode D2 and the capacitor C2 are connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q2, the IGBT or MOSFET controllable semiconductor switching power device Q3 is connected in parallel with a freewheel filter circuit formed by a parallel diode D3 and a capacitor C3, and the diode D3 and the capacitor C3 are connected in parallel with the drain and the source of the IGBT or MOSFET controllable semiconductor switching power device Q3.
Preferably, the method of the invention comprises the following steps: s1, detecting a voltage zero crossing point, circularly detecting an inversion inductance overcurrent flag bit, and if overcurrent is switched into a protection mode, normally operating if overcurrent is not detected; s2, detecting a capacitive load impedance angle, and if the impedance angle of the load exceeds 30 degrees, adopting a unipolar BCM mode as main control, and switching to a single bipolar hybrid BCM control mode from 30 degrees in capacitance to 30 degrees in inductance; s3, performing bipolar control transition at the frequency zero crossing point and the frequency distortion point, limiting the frequency to a reasonable range, and simultaneously maintaining the advantage of unipolar BCM modulation so as to improve the load adaptability of the unipolar BCM mode.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a single-phase inverter control system of a single-bipolar hybrid BCM control mode, which realizes the characteristics of low loss, small volume and high power density by adopting the control of a unipolar BCM through a main body on the basis of ensuring hysteresis control to realize soft switching, and simultaneously avoids frequency zero crossing and inhibits high-frequency harmonic waves through the transition of the bipolar BCM, thereby having good frequency adaptability to loads; theoretical analysis and experiments show that: for a load with an impedance angle of-10 to 10 degrees, the inverter has good load adaptability; for loads with impedance angles of-30-10 degrees and 10-30 degrees, the inverter has good load adaptability. In the above load situation, the switching frequency is limited to a certain range.
Drawings
FIG. 1 is a schematic diagram of a circuit structure of the present invention;
FIG. 2 is a schematic illustration of the SPWM waveform of the present invention;
FIG. 3 is a flow chart of method steps of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-3, the present invention provides a technical solution: a single-phase inverter control system of single-bipolar hybrid BCM control mode comprises a modulation circuit, wherein one side of the modulation circuit is electrically connected with a power supply V A The modulation circuit comprises four IGBT or MOSFET controllable semiconductor switch power devices, a load resistor Z is electrically connected between the four IGBT or MOSFET controllable semiconductor switch power devices, the four IGBT or MOSFET controllable semiconductor switch power devices are respectively and connected with a follow current filter circuit, and an LC filter is electrically connected to the load resistor Z.
In order to realize modulation of output and control frequency, in this embodiment, preferably, the four IGBT or MOSFET controllable semiconductor switching power devices include an IGBT or MOSFET controllable semiconductor switching power device Q1, an IGBT or MOSFET controllable semiconductor switching power device Q2, an IGBT or MOSFET controllable semiconductor switching power device Q3, and an IGBT or MOSFET controllable semiconductor switching power device Q4 that are electrically connected.
To achieve a regulation frequency and a power supply V A Electrically connected to complete regulation control, in this embodiment, preferably, the drain electrode of the IGBT or MOSFET controllable semiconductor switching power device Q1 is connected to the power supply V A The drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the power supply V A The source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q1 is electrically connected with the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q4, and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q4 is electrically connected with the power supply V A The source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3, and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3 is connected with the power supply V A Is electrically connected with the negative electrode of the battery.
In order to implement connection of the load resistor Z and complete voltage output regulation of the load resistor Z, in this embodiment, preferably, the IGBT or MOSFET controllable semiconductor switching power device Q1 and the IGBT or MOSFET controllable semiconductor switching power device Q4 that are connected in series and the IGBT or MOSFET controllable semiconductor switching power device Q2 and the IGBT or MOSFET controllable semiconductor switching power device Q3 that are connected in series are electrically connected to two ends of the load resistor Z, the IGBT or MOSFET controllable semiconductor switching power device Q1 and the IGBT or MOSFET controllable semiconductor switching power device Q4 that are connected in series are electrically connected to an anode of the load resistor Z, and the IGBT or MOSFET controllable semiconductor switching power device Q2 and the IGBT or MOSFET controllable semiconductor switching power device Q3 that are connected in series are electrically connected to a cathode of the load resistor Z.
In order to implement filtering processing on the output voltage and improve the stability of the voltage, in this embodiment, preferably, the LC filter includes an inductor L and a capacitor C5, where the inductor L is electrically connected to the positive electrode of the load resistor Z, the capacitor C5 is connected in parallel with the load resistor Z, and two ends of the capacitor C5 are respectively electrically connected to the positive electrode and the negative electrode of the load resistor Z, and one end of the capacitor C5 is electrically connected between the load resistor Z and the inductor L.
In order to achieve effective adjustment of follow current and filter control of the modulation circuit and maintain stability of operation, in this embodiment, preferably, the IGBT or MOSFET controllable semiconductor switching power device Q1 is connected in parallel with a follow current filter circuit formed by a diode D1 and a capacitor C1 connected in parallel, the diode D1 and the capacitor C1 are connected in parallel to a drain and a source of the IGBT or MOSFET controllable semiconductor switching power device Q1, the IGBT or MOSFET controllable semiconductor switching power device Q4 is connected in parallel with a follow current filter circuit formed by a diode D4 and a capacitor C4 connected in parallel, the diode D4 and the capacitor C4 are connected in parallel to a drain and a source of the IGBT or MOSFET controllable semiconductor switching power device Q4, the IGBT or MOSFET controllable semiconductor switching power device Q2 is connected in parallel with a filter circuit formed by a diode D2 and a capacitor C2 connected in parallel, the diode D2 and the capacitor C2 are connected in parallel to a drain and a MOSFET of the IGBT or controllable semiconductor switching power device Q2, and the diode D3 is connected in parallel to a drain and a capacitor C3 of the IGBT or MOSFET controllable semiconductor switching power device Q4.
In order to implement the regulation and control processing on the system, in this embodiment, preferably, the method of the present invention includes the following steps: s1, detecting a voltage zero crossing point, circularly detecting an inversion inductance overcurrent flag bit, and if overcurrent is switched into a protection mode, normally operating if overcurrent is not detected; s2, detecting a capacitive load impedance angle, and if the impedance angle of the load exceeds 30 degrees, adopting a unipolar BCM mode as main control, and switching to a single bipolar hybrid BCM control mode from 30 degrees in capacitance to 30 degrees in inductance; s3, performing bipolar control transition at the frequency zero crossing point and the frequency distortion point, limiting the frequency to a reasonable range, and simultaneously maintaining the advantage of unipolar BCM modulation so as to improve the load adaptability of the unipolar BCM mode.
The working principle and the using flow of the invention are as follows: detecting a voltage zero crossing point, circularly detecting an inversion inductance overcurrent flag bit, and if overcurrent is switched into a protection mode, normally operating if overcurrent is not detected; detecting a capacitive load impedance angle, and if the impedance angle of the load exceeds 30 degrees, adopting a unipolar BCM mode as main control, and switching to a single bipolar hybrid BCM control mode from 30 degrees capacitive to 30 degrees inductive; the bipolar control transition is used at the frequency zero crossing point and the frequency distortion point, so that the frequency is limited in a reasonable range, and meanwhile, the advantage of unipolar BCM modulation is maintained, so that the load adaptability of the unipolar BCM mode is improved; and the load resistor Z is electrically connected with an LC filter, the voltage is filtered through the inductor L and the capacitor C5, the stability of the voltage is effectively improved, and the follow current filter circuit is connected in parallel on the IGBT or MOSFET controllable semiconductor switch power device Q1, the IGBT or MOSFET controllable semiconductor switch power device Q4, the IGBT or MOSFET controllable semiconductor switch power device Q2 and the IGBT or MOSFET controllable semiconductor switch power device Q3, so that the protection is realized on the IGBT or MOSFET controllable semiconductor switch power device Q1, the IGBT or MOSFET controllable semiconductor switch power device Q4, the IGBT or MOSFET controllable semiconductor switch power device Q2 and the IGBT or MOSFET controllable semiconductor switch power device Q3, and the stable operation can be realized.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (1)
1. A single-phase inverter control system of single bipolar hybrid BCM control mode, comprising a modulation circuit characterized in that: one side of the modulation circuit is electrically connected with a power supply V A The modulation circuit comprises four IGBTsOr MOSFET controllable semiconductor switch power devices, wherein the four IGBT or MOSFET controllable semiconductor switch power devices are respectively connected with a follow current filter circuit, and a load resistor Z is electrically connected with an LC filter;
the four IGBT or MOSFET controllable semiconductor switching power devices comprise an IGBT or MOSFET controllable semiconductor switching power device Q1, an IGBT or MOSFET controllable semiconductor switching power device Q2, an IGBT or MOSFET controllable semiconductor switching power device Q3 and an IGBT or MOSFET controllable semiconductor switching power device Q4 which are electrically connected;
the drain electrode of the IGBT or MOSFET controllable semiconductor switching power device Q1 is electrically connected with the positive electrode of the power supply VA, and the drain electrode of the IGBT or MOSFET controllable semiconductor switching power device Q2 is electrically connected with the positive electrode of the power supply VA;
the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q1 is electrically connected with the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q4, and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q4 is electrically connected with the negative electrode of the power supply VA;
the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2 is electrically connected with the drain electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3, and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3 is electrically connected with the negative electrode of the power supply VA;
the LC filter comprises an inductor L and a capacitor C5, one end of the inductor L is connected between an IGBT or MOSFET controllable semiconductor switch power device Q1 and an IGBT or MOSFET controllable semiconductor switch power device Q4, the other end of the inductor L is connected with the positive electrode of a load resistor Z, the negative electrode of the load resistor Z is connected between an IGBT or MOSFET controllable semiconductor switch power device Q2 and an IGBT or MOSFET controllable semiconductor switch power device Q3, and the capacitor C5 is connected in parallel at two ends of the load resistor Z;
the IGBT or MOSFET controllable semiconductor switch power device Q1 is connected with a follow current filter circuit composed of a diode D1 and a capacitor C1 which are connected in parallel, the diode D1 and the capacitor C1 are connected in parallel on the drain electrode and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q1, the IGBT or MOSFET controllable semiconductor switch power device Q4 is connected with a follow current filter circuit composed of a diode D4 and a capacitor C4 which are connected in parallel, and the diode D4 and the capacitor C4 are connected in parallel on the drain electrode and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q4;
the IGBT or MOSFET controllable semiconductor switch power device Q2 is connected with a follow current filter circuit composed of a diode D2 and a capacitor C2 which are connected in parallel, the diode D2 and the capacitor C2 are connected in parallel on the drain electrode and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q2, the IGBT or MOSFET controllable semiconductor switch power device Q3 is connected with a follow current filter circuit composed of a diode D3 and a capacitor C3 which are connected in parallel, and the diode D3 and the capacitor C3 are connected in parallel on the drain electrode and the source electrode of the IGBT or MOSFET controllable semiconductor switch power device Q3;
the method comprises the following steps: s1, detecting a voltage zero crossing point, circularly detecting an inversion inductance overcurrent flag bit, and if overcurrent is switched into a protection mode, normally operating if overcurrent is not detected; s2, detecting a capacitive load impedance angle, and if the impedance angle of the load exceeds 30 degrees, adopting a unipolar BCM mode as main control, and switching to a single bipolar hybrid BCM control mode from 30 degrees in capacitance to 30 degrees in inductance; s3, performing bipolar control transition at the frequency zero crossing point and the frequency distortion point, limiting the frequency to a reasonable range, and simultaneously maintaining the advantage of unipolar BCM modulation so as to improve the load adaptability of the unipolar BCM mode.
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