CN114720097B - Optical detection system for detecting TGG wafer - Google Patents
Optical detection system for detecting TGG wafer Download PDFInfo
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Abstract
The invention discloses an optical detection system for detecting a TGG wafer, which belongs to the technical field of TGG wafer detection and comprises a wafer light source library, a planning module, a detection module and a server; the wafer optical library is used for storing optical characteristic data of the TGG wafer; the planning module is used for carrying out optical detection planning of the TGG wafer, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and arranging corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme; the detection module is used for carrying out optical detection of the TGG wafer, a TGG wafer detection scheme is set for enterprises through the setting planning module, detection equipment is arranged and the subsequent TGG wafer is detected according to the set TGG wafer detection scheme, automatic and intelligent detection of the TGG wafer is realized, and detection efficiency of the TGG wafer is greatly improved.
Description
Technical Field
The invention belongs to the technical field of TGG wafer detection, and particularly relates to an optical detection system for TGG wafer detection.
Background
TGG single crystal is the best magneto-optical material for manufacturing Faraday rotator and isolator, and the applicable wavelength is 400-1100nm (excluding 470-500 nm); the Faraday rotator consists of a TGG crystal bar and a specially designed magnet; the polarization direction of the light beam passing through the magneto-optical material is deflected under the action of the magnetic field, and the deflection direction is only related to the direction of the magnetic field and is irrelevant to the propagation direction of the light beam; the optical isolator consists of a 45 degree deflection rotator and a pair of appropriately placed polarizers that allow the light beam to pass in only one direction while blocking the counter-propagating light beam.
Along with the increasing application of TGG wafers, related production enterprises have higher requirements on the production capacity of the TGG wafers, but the existing TGG wafer detection has partial detection steps by adopting manual detection, so that the efficiency is lower, and the requirements of the existing enterprises on the detection efficiency cannot be met.
Disclosure of Invention
In order to solve the problems of the above-mentioned scheme, the present invention provides an optical inspection system for TGG wafer inspection.
The aim of the invention can be achieved by the following technical scheme:
an optical inspection system for TGG wafer inspection comprises a wafer optical library, a planning module, an inspection module and a server;
the wafer optical library is used for storing optical characteristic data of the TGG wafer; the planning module is used for carrying out optical detection planning of the TGG wafer, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and arranging corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme;
the detection module is used for carrying out optical detection on the TGG wafer, and the specific method comprises the following steps:
collecting detection data of a TGG wafer passing through a TGG wafer detection area through corresponding detection equipment, integrating the collected detection data into analysis data, and matching corresponding TGG wafer optical characteristic data from a wafer optical library; and acquiring environmental factors of a current detection area according to the characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain detection results, wherein the detection results comprise qualified detection and unqualified detection, marking the TGG wafer with the unqualified detection result, and screening the marked TGG wafer.
Further, the working method of the wafer light source library comprises the following steps:
acquiring TGG wafer information produced by a current enterprise, performing corresponding optical characteristic retrieval according to the acquired TGG wafer information, acquiring optical characteristic retrieval data, performing duplication removal on the acquired optical characteristic retrieval data, and performing association induction on the duplicated optical characteristic retrieval data according to the corresponding TGG wafer information; marking the data after the association induction as data to be corrected, sending the data to be corrected to corresponding management staff in an enterprise for internal correction, marking the corrected data to be corrected as TGG wafer optical characteristic data, and storing the TGG wafer optical characteristic data into a wafer optical library.
Further, the working method of the planning module comprises the following steps:
and identifying TGG wafer information required to be detected by the enterprise, marking the TGG wafer information as target wafer information, matching the corresponding TGG wafer optical characteristic data from the wafer optical library according to the target wafer information, and setting a TGG wafer detection scheme according to the obtained TGG wafer optical characteristic data.
Further, the method for setting a TGG wafer inspection plan based on the obtained TGG wafer optical characteristic data includes:
setting TGG wafer optical characteristic vectors Pi, marking corresponding TGG wafer optical characteristic data labels, mapping the TGG wafer optical characteristic vectors Pi into a vector space, merging TGG wafer optical characteristic vector Pi areas, marking the areas as vector areas, and setting representative vectors Di of each vector area; setting a matching degree interval according to the vector interval and the representative vector Di, setting a corresponding TGG wafer detection scheme according to the vector interval, and marking a corresponding scheme label on the representative vector Di; establishing a first database, inputting a TGG wafer detection scheme into the first database for storage, and marking the current first database as a detection scheme library;
acquiring the optical characteristic data of a TGG wafer which is required to be detected currently, carrying out vector conversion through a conversion module to obtain a matching vector Li, and mapping the matching vector Li into a vector space for matching; and calculating the matching degree Q between the matching vector Li and each representative vector Di according to a matching formula, and matching the matching degree Q to a corresponding matching degree interval to obtain a corresponding TGG wafer detection scheme.
Further, the matching formula is that
Further, the method for setting the TGG wafer optical characteristic vector Pi includes:
and establishing a conversion module, and carrying out vector conversion on the TGG wafer optical characteristic data in the wafer optical library through the conversion model to obtain a TGG wafer optical characteristic vector Pi.
Compared with the prior art, the invention has the beneficial effects that: by setting the wafer light library, the establishment of detection standards by enterprises is facilitated, and a detection basis is provided for the detection of subsequent TGG wafers; by setting the planning module, a TGG wafer detection scheme is set for enterprises, the arrangement of detection equipment and the detection of subsequent TGG wafers are carried out according to the set TGG wafer detection scheme, the automation and the intelligent detection of the TGG wafers are realized, and the detection efficiency of the TGG wafers is greatly improved.
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In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a functional block diagram of the present invention.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, an optical inspection system for TGG wafer inspection includes a wafer photonics library, a planning module, an inspection module, and a server;
the wafer optical library is used for storing optical characteristic data of a TGG wafer, and the specific method comprises the following steps:
acquiring TGG wafer information produced by a current enterprise, wherein the TGG wafer information comprises information such as model, material composition, size and the like, performing corresponding optical characteristic retrieval according to the acquired TGG wafer information to acquire optical characteristic retrieval data, performing duplication removal on the acquired optical characteristic retrieval data, and performing association induction on the duplicated optical characteristic retrieval data according to the corresponding TGG wafer information; marking the data after the association induction as data to be corrected, sending the data to be corrected to corresponding management staff in an enterprise for internal correction, marking the corrected data to be corrected as TGG wafer optical characteristic data, and storing the TGG wafer optical characteristic data into a wafer optical library.
Because the direct retrieval of the consolidated data may not be uniform with the inspection standards within a particular enterprise, corresponding internal corrections are made by the enterprise management personnel to make them compatible with the optical inspection of TGG wafers produced within the enterprise; thus, in one embodiment, to further enhance automation, neural network models may be built, automatically modified by smart models based on detection requirements within the enterprise.
The method for carrying out correlation induction on the optical characteristic retrieval data after the duplication removal according to the corresponding TGG wafer information comprises the following steps:
first, the de-duplication of data is common knowledge in the art, so that the description of the related sorting is not detailed, that is, the optical characteristic search data is classified according to the corresponding TGG wafer information in a one-to-one correspondence manner, for example, the related sorting can be performed in a form classification corresponding manner, and many other methods for realizing the related sorting are not listed.
The planning module is used for carrying out optical detection planning of the TGG wafer, and the specific method comprises the following steps:
identifying TGG wafer information required to be detected by an enterprise, marking the TGG wafer information as target wafer information, matching corresponding TGG wafer optical characteristic data from a wafer optical library according to the target wafer information, setting a TGG wafer detection scheme according to the obtained TGG wafer optical characteristic data, and obtaining a TGG wafer detection area, namely dividing the area into detection areas by the enterprise, wherein the setting is required according to specific production and detection conditions of the enterprise; and corresponding detection equipment is arranged in the TGG wafer detection area according to the TGG wafer detection scheme.
The method for setting the TGG wafer inspection scheme according to the obtained TGG wafer optical characteristic data comprises the following steps:
establishing a conversion module, and performing vector conversion on the TGG wafer optical characteristic data in the wafer optical library through the conversion module to obtain a TGG wafer optical characteristic vector Pi, wherein i=1, 2, … …, n and n are positive integers, such as Pi= (P1, P2, …, pn); i represents an element in a TGG wafer optical property vector; marking a corresponding TGG wafer optical characteristic data label, mapping a TGG wafer optical characteristic vector Pi into a vector space, merging the TGG wafer optical characteristic vector Pi areas, marking the areas as vector areas, and setting a representative vector Di of each vector area; the matching degree interval is set according to the vector interval and the representative vector Di, and the specific calculation process is common knowledge in the field, so that the detailed description is omitted; setting a corresponding TGG wafer detection scheme according to the vector interval, performing discussion setting by an expert group, and marking a corresponding scheme label on a representative vector Di; establishing a first database, inputting a TGG wafer detection scheme into the first database for storage, and marking the current first database as a detection scheme library;
acquiring the optical characteristic data of a TGG wafer which is required to be detected currently, carrying out vector conversion through a conversion module to obtain a matching vector Li, and mapping the matching vector Li into a vector space for matching;
according to the matching formula
And calculating the matching degree Q between the matching vector Li and each representative vector Di, and matching the matching degree Q to a corresponding matching degree interval to obtain a corresponding TGG wafer detection scheme. />
The conversion module is established based on a CNN network or a DNN network, is used for carrying out vector conversion after the optical characteristic data of the TGG wafer are quantized, firstly, an expert group establishes a corresponding numerical conversion table of the optical characteristic data of the TGG wafer, then a corresponding training set is set, training is carried out through the set training set, and the specific establishment and training process is common knowledge in the field, so that the detailed description is omitted.
The method for combining the TGG wafer optical characteristic vector Pi regions can directly use the existing vector clustering method for combining.
The method for setting the representative vector Di of each vector section comprises the following steps: the intelligent model is built based on the CNN network or DNN network, the training set is set for training, the intelligent model after successful training is set, and the specific building and training process is common knowledge in the art, so that the detailed description is omitted.
The detection module is used for carrying out optical detection on the TGG wafer, and the specific method comprises the following steps:
collecting detection data of a TGG wafer passing through a TGG wafer detection area through corresponding detection equipment, integrating the collected detection data into analysis data, and matching corresponding TGG wafer optical characteristic data from a wafer optical library; and acquiring environmental factors of a current detection area according to the characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain detection results, wherein the detection results comprise qualified detection and unqualified detection, marking the TGG wafer with the unqualified detection result, and screening the marked TGG wafer.
The method for collecting the environmental factors of the current detection area according to the characteristics of the detection equipment comprises the following steps: the acquisition detection device is affected by which environmental factors during the detection process,
marking the corresponding environmental factors reaching the influence indexes as target factors, wherein the influence indexes are the influence degrees of influence detection equipment set by the corresponding expert group, and a standard line is needed for screening because a piece of equipment is extremely subjected to a plurality of environmental influence factors in the operation process; and collecting data corresponding to target factors, such as temperature, humidity, illumination and other factors which may influence detection, and marking the collected data as environmental factors.
The above formulas are all formulas with dimensions removed and numerical values calculated, the formulas are formulas which are obtained by acquiring a large amount of data and performing software simulation to obtain the closest actual situation, and preset parameters and preset thresholds in the formulas are set by a person skilled in the art according to the actual situation or are obtained by simulating a large amount of data.
The working principle of the invention is as follows: storing optical characteristic data of the TGG wafer through a wafer optical library; performing optical detection planning of the TGG wafer through a planning module, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and arranging corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme; collecting detection data of a TGG wafer passing through a TGG wafer detection area through corresponding detection equipment, integrating the collected detection data into analysis data, and matching corresponding TGG wafer optical characteristic data from a wafer optical library; and acquiring environmental factors of a current detection area according to the characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain detection results, wherein the detection results comprise qualified detection and unqualified detection, marking the TGG wafer with the unqualified detection result, and screening the marked TGG wafer.
The above embodiments are only for illustrating the technical method of the present invention and not for limiting the same, and it should be understood by those skilled in the art that the technical method of the present invention may be modified or substituted without departing from the spirit and scope of the technical method of the present invention.
Claims (5)
1. An optical detection system for detecting a TGG wafer is characterized by comprising a wafer light source library, a planning module, a detection module and a server;
the wafer optical library is used for storing optical characteristic data of the TGG wafer; the planning module is used for carrying out optical detection planning of the TGG wafer, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and arranging corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme;
the detection module is used for carrying out optical detection on the TGG wafer, and the specific method comprises the following steps:
collecting detection data of a TGG wafer passing through a TGG wafer detection area through corresponding detection equipment, integrating the collected detection data into analysis data, and matching corresponding TGG wafer optical characteristic data from a wafer optical library; and acquiring environmental factors of a current detection area according to the characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain detection results, wherein the detection results comprise qualified detection and unqualified detection, marking the TGG wafer with the unqualified detection result, and screening the marked TGG wafer.
2. An optical inspection system for TGG wafer inspection as defined in claim 1, wherein the method of operation of the planning module comprises:
and identifying TGG wafer information required to be detected by the enterprise, marking the TGG wafer information as target wafer information, matching the corresponding TGG wafer optical characteristic data from the wafer optical library according to the target wafer information, and setting a TGG wafer detection scheme according to the obtained TGG wafer optical characteristic data.
3. An optical inspection system for TGG wafer inspection as claimed in claim 2, wherein the method of setting the TGG wafer inspection plan based on the obtained TGG wafer optical characteristic data comprises:
setting TGG wafer optical characteristic vectors Pi, marking corresponding TGG wafer optical characteristic data labels, mapping the TGG wafer optical characteristic vectors Pi into a vector space, merging TGG wafer optical characteristic vector Pi areas, marking the areas as vector areas, and setting representative vectors Di of each vector area; setting a matching degree interval according to the vector interval and the representative vector Di, setting a corresponding TGG wafer detection scheme according to the vector interval, and marking a corresponding scheme label on the representative vector Di; establishing a first database, inputting a TGG wafer detection scheme into the first database for storage, and marking the current first database as a detection scheme library;
acquiring the optical characteristic data of a TGG wafer which is required to be detected currently, carrying out vector conversion through a conversion module to obtain a matching vector Li, and mapping the matching vector Li into a vector space for matching; and calculating the matching degree Q between the matching vector Li and each representative vector Di according to a matching formula, and matching the matching degree Q to a corresponding matching degree interval to obtain a corresponding TGG wafer detection scheme.
4. An optical inspection system for TGG wafer inspection as defined in claim 3, wherein the matching formula is
5. An optical inspection system for TGG wafer inspection as claimed in claim 3, wherein the method of setting the TGG wafer optical characteristic vector Pi comprises:
and establishing a conversion module, and carrying out vector conversion on the TGG wafer optical characteristic data in the wafer optical library through the conversion model to obtain a TGG wafer optical characteristic vector Pi.
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