CN114705332B - High-sensitivity low-nonlinearity pressure sensor and preparation method thereof - Google Patents
High-sensitivity low-nonlinearity pressure sensor and preparation method thereof Download PDFInfo
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- CN114705332B CN114705332B CN202210488986.6A CN202210488986A CN114705332B CN 114705332 B CN114705332 B CN 114705332B CN 202210488986 A CN202210488986 A CN 202210488986A CN 114705332 B CN114705332 B CN 114705332B
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000035945 sensitivity Effects 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention relates to the technical field of MEMS sensors and discloses a high-sensitivity low-nonlinearity pressure sensor and a preparation method thereof, wherein the high-sensitivity low-nonlinearity pressure sensor comprises a substrate silicon layer, a silicon dioxide insulating layer, a device layer and a silicon nitride passivation layer which are sequentially arranged from bottom to top, four groups of piezoresistors are arranged on the device layer and are respectively arranged at positions right above the midpoints of four sides of a stress cup, a conduction band is arranged on the device layer, and the four groups of piezoresistors are connected with an electrode through the conduction band to form a Wheatstone bridge; the pressure sensor structure solves the contradiction of improving sensitivity and reducing nonlinearity, and compared with an E-type cup structure, the structure reduces stress concentration phenomenon. Compared with the pressure sensor with the traditional structure, the pressure sensor with the new structure has the advantages that under the condition of the same sensitivity, the maximum deformation is reduced by 20-30%, and the nonlinearity of the sensor can be obviously reduced.
Description
Technical Field
The invention relates to the technical field of MEMS sensors, in particular to a high-sensitivity low-nonlinearity pressure sensor and a preparation method thereof.
Background
The pressure sensor is a device or apparatus having a sensing pressure signal and capable of converting the pressure signal into an electrical signal according to a certain rule, and is generally composed of a pressure sensitive element and a signal processing unit. Pressure sensors can be classified into gauge pressure sensors, differential pressure sensors, and absolute pressure sensors, according to the type of test pressure.
The pressure sensor is widely applied to the fields of aerospace, automotive electronics, industrial control and the like, and can be divided into strain type, capacitance type, piezoresistive type and resonance type according to principles. Piezoresistance pressure sensor based on MEMS (micro mechanical system) has the characteristics of high precision, low cost and good stability. With the continuous expansion of the sensor market, the application scene of the sensor is continuously increased, the use environment of the sensor is becoming more and more severe, and the pressure sensor with high sensitivity and low nonlinearity is always favored by the industry practitioners and end users.
Piezoresistive pressure sensors utilize the piezoresistive effect of monocrystalline silicon material (piezoresistive material) to effect a transition of the applied pressure to an output voltage. Four groups of piezoresistor strips which are formed by monocrystalline silicon materials and have the same size and resistance are arranged at the position with the maximum stress around the pressure sensor sensitive film and are connected with the electrodes through conduction bands, so that the four groups of piezoresistor strips form a Wheatstone bridge, and the bridge is excited by a constant current source or a constant voltage source. When the pressure sensor is under the action of pressure, the sensitive film generates stress, the resistivity of the resistance bar changes, and the output voltage under the pressure can be measured through the Wheatstone bridge. The greater the pressure applied to the resistor strip, the greater the stress generated by the sensitive film, the greater the voltage output by the corresponding pressure sensor, namely the greater the sensitivity, but the greater the sensitivity is accompanied by the greater deformation, when the deformation is greater, the greater the nonlinearity of the sensor is, and the nonlinearity increase seriously affects the performance of the sensor, so that the sensor has high performance, and the sensor sensitivity is increased and the nonlinearity is reduced.
The existing pressure sensor has the defects that: 1. the sensitive film of the sensor is generally a plane film, and the sensor adopting the film structure has a pair of contradictions of improving the sensitivity and reducing the nonlinearity; 2. the sensor adopting the planar membrane structure has larger nonlinear change along with the continuous increase of the ambient pressure; 3. for the sensor structure of the E-cup, the new structure has smaller concentrated stress than the former structure.
Disclosure of Invention
(One) solving the technical problems
Aiming at the defects of the prior art, the invention provides the high-sensitivity low-nonlinearity pressure sensor and the preparation method thereof, which have the advantages that the nonlinearity of the pressure sensor is reduced to the maximum extent while the sensitivity of the piezoresistive pressure sensor is ensured, and the problem that the sensitivity of the pressure sensor is improved and the nonlinearity of the pressure sensor is reduced is solved.
(II) technical scheme
In order to achieve the above purpose, the present invention provides the following technical solutions: the utility model provides a low nonlinear pressure sensor of high sensitivity, includes substrate silicon layer, silicon dioxide insulating layer, device layer and the silicon nitride passivation layer of arranging in proper order from bottom to top, be equipped with four sets of piezo-resistors on the device layer to set up respectively in the mid point of stress cup four sides directly over the position, be equipped with the conduction band on the device layer, four sets of piezo-resistors pass through the conduction band is connected with the electrode and is formed the wheatstone bridge, four sets of piezo-resistors with deposit around the conduction band has the silicon dioxide.
Preferably, the sensitive film is provided with a table body with an inverted pyramid structure formed by a plurality of bosses.
The preparation method of the high-sensitivity low-nonlinearity pressure sensor is characterized by comprising the following steps of:
Step 1: preparing an SOI (silicon on insulator) sheet, wherein the SOI sheet consists of a substrate silicon layer, a silicon dioxide insulating layer and a device layer;
Step 2: ion implantation is carried out on the SOI wafer device layer, and a piezoresistor strip is formed through etching;
step 3: cleaning the SOI sheet, and carrying out high-temperature annealing on the SOI sheet, wherein the annealing temperature is 700-800 ℃;
Step 4: forming a connecting conduction band through an evaporation or sputtering process;
step 5: forming a silicon dioxide insulating layer around the varistor strip and the connecting conduction band through an LPCVD process;
step 6: etching off the silicon dioxide insulating layer deposited on the piezoresistor strip and the connecting conducting strip;
Step 7: to improve the corrosion resistance of the pressure sensor, a silicon nitride passivation layer with the thickness of 100nm-1000nm is formed above the piezoresistor strip;
step 8: etching 5-12 square bosses on the opposite surface of the device layer by using 5-12 square mask plates to finally form an inverted pyramid-shaped platform structure;
Step 9: removing the mask plate in the center of the surface, and continuing to etch the surface to finally form a stress cup and a pressure sensor sensitive film with an inverted pyramid platform structure in the center;
step 10: forming an electrode connection hole in the passivation layer by photolithography;
Step 11: and forming a metal layer inside the electrode connecting hole by magnetron sputtering to finally form the electrode.
Preferably, the width of the first layer square mask plate: 600-800um, decreasing from the second layer by 50-100um.
Preferably, the thickness of the silicon layer of the substrate is 200-300um, the thickness of the silicon dioxide insulating layer is 3-5um, and the thickness of the device layer is 0.5-2um.
Preferably, the varistor strip is long-wide-high: 100um by 10um by 0.5-2um, and the thickness of the silicon dioxide insulating layer is 0.5-2um.
Preferably, the height of the inverted pyramid-shaped boss structure is 3-5um.
(III) beneficial effects
Compared with the prior art, the invention provides the high-sensitivity low-nonlinearity pressure sensor and the preparation method thereof, and the high-sensitivity low-nonlinearity pressure sensor has the following beneficial effects:
The pressure sensor solves the contradiction of improving sensitivity and reducing nonlinearity by a table body with an inverted pyramid structure formed by a plurality of bosses at the center of the sensitive film, and compared with an E-shaped cup structure, the stress concentration phenomenon is reduced by the structure, and the deformation of the pressure sensor with a new structure is reduced by 20-30% under the same stress condition compared with the pressure sensor with a traditional structure.
Drawings
FIG. 1 is a cross-sectional view of a pressure sensor of the present invention;
FIG. 2 is an enlarged view of a portion of a boss in accordance with the present invention;
FIG. 3 is a schematic diagram of a silicon nitride layer removing mechanism according to the present invention;
FIG. 4 is a back view of a pressure sensor of the present invention;
Fig. 5 is a diagram of an etching step according to the present invention.
In the figure: 1. a substrate silicon layer; 2. a silicon dioxide insulating layer; 3. a device layer; 4. a silicon nitride passivation layer; 5. a piezoresistor; 6. a stress cup; 7. a table body; 8. a boss; 9. a sensitive film; 10. conduction band; 11. an electrode.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The utility model provides a high sensitivity low nonlinear pressure sensor, includes substrate silicon layer 1, silicon dioxide insulating layer 2, device layer 3 and silicon nitride passivation layer 4 that from bottom to top arranged in proper order, is equipped with four sets of piezo-resistors 5 on the device layer 3 to set up respectively in the position directly over the mid point of stress cup 6 four sides, be equipped with conduction band 10 on the device layer 3, four sets of piezo-resistors 5 are connected with electrode 11 through conduction band 10 and form the wheatstone bridge, and four sets of piezo-resistors 5 and silicon dioxide deposit around conduction band 10.
In this embodiment, specifically, the sensitive film 9 is a table body 7 with an inverted pyramid structure formed by a plurality of bosses 8.
The following preparation method is also provided in this embodiment:
Step 1: preparing an SOI (silicon on insulator) sheet, wherein the SOI sheet consists of a substrate silicon layer, a silicon dioxide insulating layer and a device layer;
Step 2: ion implantation is carried out on the SOI wafer device layer, and a piezoresistor strip is formed through etching;
step 3: cleaning the SOI sheet, and carrying out high-temperature annealing on the SOI sheet, wherein the annealing temperature is 700-800 ℃;
Step 4: forming a connecting conduction band through an evaporation or sputtering process;
step 5: forming a silicon dioxide insulating layer around the varistor strip and the connecting conduction band through an LPCVD process;
step 6: etching off the silicon dioxide insulating layer deposited on the piezoresistor strip and the connecting conducting strip;
Step 7: to improve the corrosion resistance of the pressure sensor, a silicon nitride passivation layer with the thickness of 100nm-1000nm is formed above the piezoresistor strip;
step 8: etching 5-12 square bosses on the opposite surface of the device layer by using 5-12 square mask plates to finally form an inverted pyramid-shaped platform structure;
Step 9: removing the mask plate in the center of the surface, and continuing to etch the surface to finally form a stress cup and a pressure sensor sensitive film with an inverted pyramid platform structure in the center;
step 10: forming an electrode connection hole in the passivation layer by photolithography;
Step 11: and forming a metal layer inside the electrode connecting hole by magnetron sputtering to finally form the electrode.
In this embodiment, specifically, the width of the first layer of square mask plate: 600-800um, decreasing from the second layer by 50-100um.
In this embodiment, the thickness of the silicon layer of the substrate is 200-300um, the thickness of the silicon dioxide insulating layer is 3-5um, and the thickness of the device layer is 0.5-2um.
In this embodiment, specifically, the varistor strip length is equal to the width is equal to the height: 100um x10 um x 0.5-2um, the thickness of the silicon dioxide insulating layer is 0.5-2um.
In this embodiment, the height of the inverted pyramid-shaped boss structure is 3-5um.
Compared with the pressure sensor with the traditional structure, the pressure sensor with the new structure has 20-30% reduced deformation under the same stress condition.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A high sensitivity low non-linear pressure sensor, characterized by: the device comprises a substrate silicon layer (1), a silicon dioxide insulating layer (2), a device layer (3) and a silicon nitride passivation layer (4) which are sequentially arranged from bottom to top, wherein four groups of piezoresistors (5) are arranged on the device layer (3) and are respectively arranged at positions right above the midpoints of four sides of a stress cup (6), a conduction band (10) is arranged on the device layer (3), the four groups of piezoresistors (5) are connected with an electrode (11) through the conduction band (10) to form a Wheatstone bridge, and silicon dioxide is deposited around the four groups of piezoresistors (5) and the conduction band (10);
The upper surface of the stress cup (6) is provided with a sensitive film (9), and the lower surface of the sensitive film (9) is provided with a table body (7) with an inverted pyramid structure, which is composed of a plurality of bosses (8).
2. A method of manufacturing a high sensitivity low nonlinearity pressure sensor according to claim 1, comprising the steps of:
Step 1: preparing an SOI (silicon on insulator) sheet, wherein the SOI sheet consists of a substrate silicon layer, a silicon dioxide insulating layer and a device layer;
Step 2: ion implantation is carried out on the SOI wafer device layer, and a piezoresistor strip is formed through etching;
step 3: cleaning the SOI sheet, and carrying out high-temperature annealing on the SOI sheet, wherein the annealing temperature is 700-800 ℃;
Step 4: forming a connecting conduction band through an evaporation or sputtering process;
step 5: forming a silicon dioxide insulating layer around the varistor strip and the connecting conduction band through an LPCVD process;
step 6: etching off the silicon dioxide insulating layer deposited on the piezoresistor strip and the connecting conducting strip;
Step 7: to improve the corrosion resistance of the pressure sensor, a silicon nitride passivation layer with the thickness of 100nm-1000nm is formed above the piezoresistor strip;
step 8: etching 5-12 square bosses on the opposite surface of the device layer by using 5-12 square mask plates to finally form an inverted pyramid-shaped platform structure;
Step 9: removing the mask plate in the center of the surface, and continuing to etch the surface to finally form a stress cup and a pressure sensor sensitive film with an inverted pyramid platform structure in the center;
step 10: forming an electrode connection hole in the passivation layer by photolithography;
Step 11: and forming a metal layer inside the electrode connecting hole by magnetron sputtering to finally form the electrode.
3. The method for manufacturing the high-sensitivity low-nonlinearity pressure sensor according to claim 2, wherein: the thickness of the silicon layer of the substrate is 200-300um, the thickness of the silicon dioxide insulating layer is 3-5um, and the thickness of the device layer is 0.5-2um.
4. The method for manufacturing the high-sensitivity low-nonlinearity pressure sensor according to claim 2, wherein: the varistor strip length is equal to the varistor strip width is equal to the varistor strip height: 100um by 10um by 0.5-2um, and the thickness of the silicon dioxide insulating layer is 0.5-2um.
5. The method for manufacturing the high-sensitivity low-nonlinearity pressure sensor according to claim 2, wherein: the height of the inverted pyramid-shaped boss structure is 3-5um.
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| CN115165174B (en) * | 2022-08-26 | 2024-01-30 | 南京高华科技股份有限公司 | MEMS piezoresistive pressure sensor and preparation method thereof |
| CN117889998A (en) * | 2024-03-13 | 2024-04-16 | 成都凯天电子股份有限公司 | A sensor chip with stress amplification structure and preparation method thereof |
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| CN211954507U (en) * | 2020-06-22 | 2020-11-17 | 明石创新(烟台)微纳传感技术研究院有限公司 | Beam island membrane piezoresistive pressure sensor |
| CN112357877A (en) * | 2021-01-12 | 2021-02-12 | 东南大学 | MEMS SOI pressure sensor and preparation method thereof |
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| CN1088515C (en) * | 1998-03-04 | 2002-07-31 | 中国科学院电子学研究所 | sensitive film-cathode composite pressure sensor |
| KR101202612B1 (en) * | 2010-04-30 | 2012-11-19 | (주)코아칩스 | Packiging structure of pressure sensor |
| CN111122044A (en) * | 2019-11-27 | 2020-05-08 | 苏州长风航空电子有限公司 | Airborne aviation high-sensitivity output pressure chip and preparation method thereof |
| CN114184309B (en) * | 2021-10-27 | 2023-09-01 | 贵州航天智慧农业有限公司 | Piezoresistive MEMS sensor and preparation method thereof |
| CN114235233B (en) * | 2021-12-16 | 2024-01-05 | 东南大学 | MEMS pressure sensor and preparation method thereof |
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| CN105784254A (en) * | 2016-04-20 | 2016-07-20 | 南方科技大学 | Flexible pressure sensor and touch screen |
| CN211954507U (en) * | 2020-06-22 | 2020-11-17 | 明石创新(烟台)微纳传感技术研究院有限公司 | Beam island membrane piezoresistive pressure sensor |
| CN112357877A (en) * | 2021-01-12 | 2021-02-12 | 东南大学 | MEMS SOI pressure sensor and preparation method thereof |
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