CN114678270B - Inductively coupled plasma processing device and etching method thereof - Google Patents
Inductively coupled plasma processing device and etching method thereofInfo
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- CN114678270B CN114678270B CN202011544771.9A CN202011544771A CN114678270B CN 114678270 B CN114678270 B CN 114678270B CN 202011544771 A CN202011544771 A CN 202011544771A CN 114678270 B CN114678270 B CN 114678270B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H10P50/242—
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- H10P72/0421—
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Abstract
一种用于电感耦合等离子体处理装置的刻蚀方法，所述电感耦合等离子处理装置包括一反应腔，反应腔顶部包括绝缘窗和位于绝缘窗上方的电感线圈装置，其中绝缘窗中心包括一进气喷头，反应腔内还包括一基座，待处理基片位于所述基座上，所述进气喷头用于将处理气体输入反应腔中，其特征在于：所述经过进气喷头输入反应腔的处理气体包括刻蚀气体和惰性气体，其中刻蚀气体用于与待处理基片上的材料反应进行刻蚀，所述惰性气体的流量大于刻蚀气体流量的2/3。
An etching method for an inductively coupled plasma processing device, the inductively coupled plasma processing device comprising a reaction chamber, the top of the reaction chamber comprising an insulating window and an inductive coil device located above the insulating window, wherein the center of the insulating window comprises an air inlet nozzle, the reaction chamber further comprising a base, a substrate to be processed is located on the base, the air inlet nozzle is used to input a processing gas into the reaction chamber, and is characterized in that: the processing gas input into the reaction chamber through the air inlet nozzle comprises an etching gas and an inert gas, wherein the etching gas is used to react with the material on the substrate to be processed to etch, and the flow rate of the inert gas is greater than 2/3 of the flow rate of the etching gas.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a plasma treatment method applied to an inductively coupled plasma treatment device.
Background
Plasma processing devices are widely used in integrated circuit fabrication processes, such as deposition, etching, and the like. The inductively coupled plasma (Inductively Coupled Plasma, ICP) apparatus is one of the main technologies in plasma processing apparatuses, and the principle of the inductively coupled plasma (Inductively Coupled Plasma, ICP) apparatus is mainly to use radio frequency power to drive an inductive coupling coil to generate a strong high-frequency alternating magnetic field, so that low-pressure reaction gas is ionized to generate plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can react with the surface of the wafer to be processed in various physical and chemical ways, so that the shape of the substrate to be processed is changed, and the etching process is completed.
Fig. 1 shows a schematic structural view of an inductively coupled plasma reaction apparatus (ICP), which is an apparatus for generating plasma and for etching by coupling energy of a radio frequency power source into the interior of a reaction chamber in the form of a magnetic field through an induction coil. The inductively coupled plasma reactor includes a vacuum reaction chamber 200 including a generally cylindrical reaction chamber sidewall 201 formed of a metallic material, with an opening 202 provided in the reaction chamber sidewall for receiving the ingress and egress of a substrate W. An insulating window 217 is disposed over the chamber sidewall 201, an inductor 215 is disposed over the insulating window 217, and a radio frequency power source 218 applies a radio frequency voltage to the inductor 215 through a radio frequency matching network 216.
The inside of the reaction chamber is provided with a liner 220 for protecting the inner wall of the reaction chamber from being corroded by plasma, one end of the side wall of the reaction chamber, which is close to the insulating window, is provided with a gas nozzle 203, and a gas nozzle 103 can be arranged in the central area of the insulating window 217, the gas nozzle 203 is used for injecting reaction gas into the vacuum reaction chamber 200, and the radio frequency power of the radio frequency power source 218 drives the induction coil 215 to generate a stronger high-frequency alternating magnetic field, so that the reaction gas with low pressure in the reaction chamber is ionized to generate plasma. Wherein the process gas supply apparatus 100 outputs a reaction gas of an adjustable flow ratio to the center gas shower and the edge gas nozzle 203. A susceptor 210 is disposed at a downstream position of the vacuum reaction chamber 200, an electrostatic chuck 212 is disposed on the susceptor 210, and an electrostatic electrode 213 is disposed inside the electrostatic chuck 212 for generating electrostatic suction force to support and fix the substrate W to be processed during the process. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can react with the surface of the substrate to be processed in various physical and chemical ways, so that the appearance of the surface of the substrate is changed, and the etching process is completed. A bias rf power source 250 applies a bias rf voltage to the susceptor through an rf matching network 252 for controlling the direction of bombardment of charged particles in the plasma. An exhaust pump 240 is further disposed below the vacuum reaction chamber 200 for exhausting the reaction byproducts out of the vacuum reaction chamber to maintain the vacuum environment of the reaction chamber.
When the plasma processing effect in the radial direction on the substrate is not uniform in the plasma reaction chamber having the above-described structure, the flow rate inputted from the process gas supply apparatus 100 to the edge gas nozzle 203 or the flow rate inputted to the center showerhead 103 may be adjusted to improve uniformity. However, the edge gas ports 203 provided through the aluminum liner 220 present a number of technical problems in that the corrosive process gas can corrode the gas flow lines in the liner 220, and the complicated shape of the gas flow lines and the extremely small inner diameter (minimum <1 mm) make it a technical problem to apply the corrosion-resistant coating within these gas flow lines. On the other hand, the passage of the gas flow line through the liner 220 also makes it more difficult to control the stable temperature of the liner, so that the supply of the process gas from the sidewall of the reaction chamber can improve the uniformity of the plasma process, but also causes problems of complicated structure and high manufacturing cost.
Disclosure of Invention
The invention provides an etching method for an inductively coupled plasma processing device, which comprises a reaction cavity, wherein the top of the reaction cavity comprises an insulating window and an induction coil device positioned above the insulating window, the center of the insulating window comprises an air inlet nozzle, a base is further arranged in the reaction cavity, a substrate to be processed is positioned on the base, and the air inlet nozzle is used for inputting processing gas into the reaction cavity. The etching method provided by the invention can greatly improve the uniformity of plasma treatment.
Preferably, the flow rate of the inert gas is greater than the flow rate of the etching gas.
Wherein the inductor means comprises a first and a second inductor, wherein the first inductor is located in a central region of the dielectric window and the second inductor surrounds said first inductor. When the flow rate of the inert gas is greater than or equal to 2 times of the flow rate of the etching gas, and the power input to the first inductance coil is greater than the power input to the second inductance coil, the etching uniformity can be further improved and the etching rate can be simultaneously improved.
The invention also provides an inductively coupled plasma processing device, which comprises a reaction cavity, wherein the top of the reaction cavity comprises an insulating window and an induction coil device positioned above the insulating window, the center of the insulating window comprises an air inlet nozzle, a base is further arranged in the reaction cavity, a substrate to be processed is positioned on the base, the air inlet nozzle is used for inputting processing gas into the reaction cavity, the air inlet nozzle is connected to a processing gas supply device, the processing gas comprising etching gas and inert gas is output into the reaction cavity, the etching gas can react with the surface material of the substrate to be processed, the induction coil device comprises a first induction coil and a second induction coil, the first induction coil is positioned in the center area of the insulating window, the second induction coil surrounds the first induction coil, and a controller is used for controlling the processing gas supply device so that the flow rate of the inert gas in the processing gas is larger than that of the etching gas.
Drawings
FIG. 1 is a schematic view of a prior art plasma processing apparatus;
FIG. 2 is a schematic view of a plasma processing apparatus according to the present invention;
FIGS. 3a and 3b are graphs of etch rate profiles for different helium flows in accordance with the present invention;
fig. 4 is a schematic cross-sectional view of the treatment apparatus of the present invention shown in fig. 2 at X.
Detailed Description
In semiconductor chip manufacturing lines, inductively coupled plasma etchers (ICPs) are commonly used to perform silicon etching, such as monocrystalline or polycrystalline silicon, due to the low ion energy. The structure of the ICP plasma processor according to the present invention is shown in fig. 2, which is the same as the basic structure of the prior art plasma processing apparatus shown in fig. 1, but the inner liner 220 is not provided with a process gas passage, so that the inner liner 220 has a simple structure and is easy to manufacture, and the manufacturing cost of the whole plasma processing apparatus is greatly reduced. The process gas supply apparatus 100 selects the ratio of each component gas according to the process menu setting from the plurality of gas storage bottles, and finally mixes the component gases to form the process gas. The process gas is inputted to the gas inlet nozzle 103 located below the central region of the insulating window 217 through the gas distributor 101, and the gas inlet nozzle includes a first gas nozzle 103a located at the center and a plurality of second gas nozzles 103b disposed around the first gas nozzle 103a, wherein the gas inputted from the first gas nozzle 103a flows downward, and the gas outputted from the second gas nozzle 103b flows toward the peripheral region of the reaction chamber. The gas distributor 101 can improve uniformity to some extent by adjusting the ratio of the flow rates of the process gases input to the first gas ports 103a, 103 b. The inductor at the top of the insulating window includes a first inductor 213 located in the central region and a second inductor 215 disposed around the central region, and a radio frequency power supply 218 outputs radio frequency power to a power divider 214 through a matcher 216, which divides the ratio of power output to the first inductor 213 and the second inductor 215.
The main etching gas used in etching the silicon material may be SF 6 or may further include Cl 2, and a small amount of inert gas such as argon or helium is usually added to assist in ion bombardment. A typical process gas parameter is SF 6/Cl2/He gas flow of 60sccm/240sccm/100sccm, respectively. However, when etching is performed by this parameter, even after the adjustment by the gas flow distributor 101 and the power distributor 214 described above, the desired etching uniformity is not achieved. The applicant has found that, since the inner liner of the reaction chamber has no independent gas flow channel, only the gas nozzle 103 in the center of the insulating window 217, the etching gas ejected from the second gas nozzle 103b is difficult to diffuse into the peripheral area of the reaction chamber in the reaction chamber, and even if the flow rate of the etching gas ejected from the second gas nozzle is increased, the effect is very small. Failure of the etching gas to reach the edge region rapidly also results in that even if the input power of the second coil 215 is increased, only a small amount of plasma can be generated by dissociation in the underlying process gas, and the non-uniformity of the final etching rate distribution due to the non-uniformity of the gas distribution cannot be effectively compensated.
Based on the above-mentioned limited air inlet structure, the inventors developed a plasma processing method that realizes optimum etching rate and etching uniformity by adjusting process components. The novel etching method provided by the invention comprises the steps of greatly increasing the flow of inert gas (He) to 200sccm or more than 300sccm on the basis of keeping the flow of etching gas SF 6/Cl2 unchanged basically. The greatly increased He gas can be introduced into any one of the nozzles 103a/103b in the gas inlet nozzle 103, and then He gas molecules with extremely small molecular mass are rapidly diffused to the peripheral area of the reaction chamber, so that the plasma concentration distribution curve generated by the He gas molecules is complementary with the plasma concentration generated by ionization of etching gas (SF 6/Cl2) molecules. And finally, even if the concentration of etching gas molecules in the edge area is slightly low, the plasma concentration is higher, so that the activity of the etching gas molecules is larger, and the etching speed difference with the central area caused by the small etching gas quantity is compensated. The etching rate is mainly affected by the concentration of etching reactants, and helium is only used as a component of physical bombardment in the prior art, so that downward bombardment is realized only by a small flow, but it is not recognized that the role of helium in the etching process can be changed by increasing the flow of helium to the degree defined by the invention, and although helium does not directly react with the silicon material below, high-flow helium can form plasma with higher concentration at the periphery of the reaction chamber by introducing high-flow helium into the gas nozzle 103 positioned in the center of the reaction chamber, so that compensation of the etching rate below is realized. To further enhance the effect of the invention, more helium may be fed into the reaction chamber through the nozzle 103b in the gas inlet nozzle, which facilitates rapid diffusion of helium into the edge region within the reaction chamber. The process gases flowing through the gas inlet showerhead 103 at 103a and 103b have different helium contents, wherein the helium content of 103b is higher than that of 103a, but the helium content of the total process gas still needs to be maintained above 2/3.
Further studies by the inventors have found that a graph of etch rate profiles at different helium flows is shown in figure 3a, where the etch gas is maintained at a steady flow. Wherein the horizontal axis is the location area extending from the center of the substrate (x=0) to the periphery to the edge of the substrate (x=150 mm) and the vertical axis is the etch rate in angstroms per minute (a/m). It can be seen from the graph that as the helium flow increases, the etching rate of the edge region of the substrate increases rapidly, and the etching rate of the central region decreases slowly, so that a new uneven distribution is achieved in which the etching rate of the central region is smaller than that of the edge region. As shown in FIGS. 3a and 3b, the helium flow rate in the prior art is generally selected to be about 100sccm, the corresponding etch rate uniformity is 6.1% (the etch rate difference between different regions on the substrate), the uniformity is improved to 4.9% when the helium flow rate reaches 200-300sccm, and the uniformity can be optimized to 4.1% when the helium flow rate reaches 500 sccm. Further increasing the flow to 600sccm would become 7.5% uniform, but its distribution is quite opposite to that presented by the prior art with a high center-to-edge distribution, which becomes a high edge area etch rate and a low center area etch rate.
To this end, the inventor proposes another preferred embodiment to increase the flow rate of helium gas to more than twice (more than 600 sccm) of the etching gas, and the etching rate at this time is in a condition that the edge region is high and the center region is low, so that the rf power input to the center inductor 213 is increased from 40% to more than 50% or more than 60% of the total power output from the matcher 216 by the sum power divider 214. Since the etching gas is more concentrated in the central area above the substrate, the etching rate of the central area can be improved immediately by increasing the corresponding radio frequency power input, and finally, uniform etching rate distribution (the etching rate uniformity is less than 4%) is obtained, and meanwhile, the overall etching rate is increased from 1400A/m to over 1600A/m. As shown in fig. 3b, where curve 290 is the etch rate curve for a helium flow of 600 seem while increasing the power of the first rf coil to 55%. Therefore, the plasma etching process can obtain higher plasma etching rate uniformity in the inductive coupling reactor with only one air inlet nozzle, and can increase the average etching rate.
The inductor coil assembly of the present invention may be a flat type inductor coil as shown in fig. 2, or may be other shapes such as dome-shaped, or have a central concave edge convex upward, and any coil structure can be applied to the embodiments of the present invention as long as it can independently adjust the concentration ratio of the center and edge regions in the lower plasma processing chamber.
The first inductor coil 213 and the second inductor coil 215 are used to control plasma concentration parameters of the central first processing region Sc and the peripheral second processing region Se, respectively. As shown in fig. 4, which is a schematic cross-sectional view of the plasma processor X in fig. 2, a separation line L between the first and second inductors divides the lower reaction space into two processing regions, and the separation line L may be located at a midpoint between the outermost side of the first inductor 213 and the innermost side of the second inductor 215, or may be closer to the first inductor or the second inductor, and an electromagnetic field generated by the first inductor 213 may dominate a plasma concentration of a first region Sc inside the separation line L, and an electromagnetic field generated by the corresponding second inductor 215 may dominate a plasma concentration of a region Se between the outer side of the separation line and an inner wall of the inner side 220. When the traditional plasma treatment process is adopted, the structure and the size of an induction coil of a plasma processor are relatively fixed, the area ratio of Sc to Se is R, and the radio frequency power P1 and the radio frequency power P2 input into the first induction coil and the radio frequency power P2 input into the second induction coil are positively related to the area ratio R. The radio frequency power ratio (P1/P2) of the first inductance coil and the second inductance coil is about 1.2-1.5R, and the plasma concentration distribution is uneven due to too high or too low. Since the distribution of the etching rate of the central region higher than that of the edge region occurs when the conventional process parameters are operated, the input power P2 is generally increased or the input power P1 is reduced when the non-uniformity occurs, which further reduces the power ratio. In the invention, because a large amount of inert gas is introduced into the reaction cavity, the special condition that the central etching rate is lower than the edge etching rate occurs, and the power P1 input to the central area Sc needs to be larger than the power P2 input to the opposite edge area so as to compensate the etching rate distribution curve which is quite different from the prior art because of introducing a large amount of inert gas. Therefore, the radio frequency power ratio of the first inductance coil and the second inductance coil in the invention needs to be more than 2.5R to meet the requirement of process uniformity, and the invention is far beyond the adjustment range of the traditional process. For example, the first inductor coil occupies 1/4 area of the cross section of the plasma processing space, the second inductor coil occupies 3/4 area, the ratio R is 1/3, and the power ratio (P1/P2) of the first inductor coil and the second inductor coil input in the traditional process needs to be about 0.4-0.5, i.e. the first inductor coil at the center inputs 28.5% of radio frequency power, and the second inductor coil at the edge inputs 71.5% of radio frequency power. However, after the invention is adopted, the parameters of the radio frequency power ratio of the first inductance coil and the second inductance coil need to reach more than 2.5x1/3=0.83, namely, P1 needs 45.4 percent, and P2 needs 54.6 percent of radio frequency power to meet the requirement of etching rate uniformity.
The second inductor 215 may be further divided into a plurality of sub-inductors for independent input power control, such as inputting the first sub-coil power P21 and inputting the second sub-coil power P22. As long as the ratio relation between the power of the P1 and the sum of the powers of the two sub-coils (P21+P22) provided by the invention is more than 2.5R, the uniformity of etching rate can be relatively improved, and finally the aim of the invention is achieved, and the invention belongs to a modified embodiment of the invention.
According to the description of the working principle of the present invention, it can be known that the etching method of the present invention can be also applied to various etching processes in the inductively coupled reactor as shown in fig. 2, so long as there is uneven distribution of etching gas from the center to the edge, the method of the present invention can be adopted to increase the helium flow, obtain a plasma concentration distribution curve with higher edge concentration, and finally obtain a more uniform etching rate distribution. For different etching processes, for example, the etching gas can be fluorocarbon such as C 4F8 or fluorocarbon such as CHF 3, etc. when the silicon oxide material layer is etched, other auxiliary gases such as oxygen and other halogen gases such as bromine gas are mixed for etching, and a large amount of small molecule inert gas is introduced at the same time, so that the etching rate has uniform distribution on the substrate. The flow of the inert gas needs to be more than 2/3 of the total etching gas flow, and the preferable flow is more than the total etching gas flow and even more than 2 times, and the etching rate can be improved while the etching uniformity is improved by matching with the power input into the central inductance coil.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (6)
1. An etching method for an inductively coupled plasma processing apparatus, the inductively coupled plasma processing apparatus comprising a reaction chamber, the top of the reaction chamber comprising an insulating window and an inductor device positioned above the insulating window, wherein the center of the insulating window comprises an air inlet nozzle, the reaction chamber further comprises a base, a substrate to be processed is positioned on the base, the air inlet nozzle is used for inputting processing gas into the reaction chamber, the etching method is characterized in that:
The method comprises the steps that the processing gas is provided to a reaction cavity through an air inlet nozzle, plasma is ignited to process a substrate to be processed, the processing gas input to the reaction cavity comprises etching gas and inert gas, the etching gas is used for reacting with materials on the substrate to be processed to perform etching, and the flow of the inert gas is more than or equal to 2 times of the flow of the etching gas;
The air inlet nozzle comprises a first air inlet nozzle arranged at the center, a plurality of second air inlet nozzles surrounding the first air inlet nozzle, air output by the second air inlet nozzles is sprayed towards the edge area of the lower substrate, and an air distributor controls the air flow components or flow proportions input to the first air inlet nozzle and the second air inlet nozzle;
The inductor device comprises a first inductor coil and a second inductor coil, wherein the first inductor coil is positioned in the central area of the insulating window, and the second inductor coil surrounds the first inductor coil;
The power input to the first inductor is greater than the power input to the second inductor.
2. The etching method according to claim 1, wherein the material on the substrate is crystalline silicon, and the etching gas includes a fluorine-containing gas and a chlorine-containing gas.
3. The etching method of claim 1, wherein the material on the substrate is a silicon oxygen compound, and the etching gas comprises a fluorocarbon or a fluorocarbon.
4. The etching method according to claim 1, wherein a flow rate of the inert gas is greater than a flow rate of the etching gas.
5. An inductively coupled plasma processing apparatus includes a reaction chamber, the top of the reaction chamber includes an insulating window and an inductance coil device above the insulating window, wherein the center of the insulating window includes an air inlet nozzle, a base is also included in the reaction chamber, a substrate to be processed is located on the base, the air inlet nozzle is used for inputting processing gas into the reaction chamber,
The gas inlet nozzle is connected to a processing gas supply device and outputs processing gas comprising etching gas and inert gas into the reaction cavity, wherein the etching gas can react with the surface material of the substrate to be processed;
The inductor device comprises a first inductor coil and a second inductor coil, wherein the first inductor coil is positioned in the central area of the insulating window, and the second inductor coil surrounds the first inductor coil;
The power input into the first inductance coil is larger than the power input into the second inductance coil;
A controller for controlling the process gas supply device so that the flow rate of the inert gas in the process gas is 2 times greater than the flow rate of the etching gas;
The air inlet nozzle comprises a first air inlet nozzle arranged at the center, a plurality of second air inlet nozzles surrounding the first air inlet nozzle, air output by the second air inlet nozzles is sprayed towards the edge area of the lower substrate, and an air distributor controls the air flow components or flow proportions input to the first air inlet nozzle and the second air inlet nozzle.
6. The plasma processing apparatus of claim 5 wherein the first inductor coil is configured to control a plasma concentration of the first processing region below and the second inductor coil is configured to control a plasma concentration of the second processing region, wherein the horizontal cross-sectional area ratio of the first and second processing regions is R, and wherein the controller is configured such that the rf power P1 input to the first inductor coil is greater than 2.5R times the rf power P2 input to the second inductor coil.
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| CN202011544771.9A CN114678270B (en) | 2020-12-24 | 2020-12-24 | Inductively coupled plasma processing device and etching method thereof |
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| KR20230071629A (en) * | 2021-11-16 | 2023-05-23 | 삼성전자주식회사 | Plasma processing apparatus and manufacturing method of semiconductor device using thereof |
| CN117904595A (en) * | 2022-10-12 | 2024-04-19 | 中微半导体设备(上海)股份有限公司 | Reaction chamber assembly for plasma processing apparatus and method of manufacturing the same |
| CN115863131A (en) * | 2022-11-18 | 2023-03-28 | 无锡尚积半导体科技有限公司 | an etching device |
| US20240274404A1 (en) * | 2023-02-09 | 2024-08-15 | Applied Materials, Inc. | System and Method for Reducing Particle Formation in a Process Chamber of an Ion Implanter |
| CN118688884A (en) * | 2023-03-24 | 2024-09-24 | 中微半导体设备(上海)股份有限公司 | A method for preparing a superlens, a superlens and its use |
| CN121054514A (en) * | 2024-05-31 | 2025-12-02 | 江苏鲁汶仪器股份有限公司 | Semiconductor processing device |
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| CN108271309A (en) * | 2016-12-30 | 2018-07-10 | 中微半导体设备(上海)有限公司 | A kind of device for inductively coupled plasma processing |
| CN109216144A (en) * | 2017-07-03 | 2019-01-15 | 中微半导体设备(上海)有限公司 | A plasma reactor with low frequency radio frequency power distribution adjustment function |
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| CN114678270A (en) | 2022-06-28 |
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