CN114678266A - Display panel and manufacturing method thereof - Google Patents

Abstract

The invention discloses a manufacturing method of a display panel and a display panel. The manufacturing method of the display panel includes: providing a substrate; forming an amorphous silicon layer on the substrate; and performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner. The embodiments of the present invention improve the display uniformity of the display panel.

Description

Method for manufacturing a display panel and display panel

technical field

The present invention relates to the field of display technology, and in particular, to a manufacturing method of a display panel and a display panel.

Background technique

With the development of display technology, people have higher and higher requirements on the display effect of the display panel. However, the existing display panel has a problem of uneven display.

SUMMARY OF THE INVENTION

The present invention provides a manufacturing method of a display panel and a display panel, so as to improve the display uniformity of the display panel.

According to an aspect of the present invention, there is provided a manufacturing method of a display panel, comprising:

providing a substrate;

forming an amorphous silicon layer on the substrate;

Excimer laser annealing and crystallization are performed on the amorphous silicon region corresponding to each driving transistor in the same manner.

Optionally, perform excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, including:

Perform n times of excimer laser annealing and crystallization on the amorphous silicon region corresponding to each of the driving transistors, and n excimer laser annealing and crystallization of n times of excimer laser annealing in the amorphous silicon region corresponding to each of the driving transistors The laser irradiation positions are respectively the same as the n excimer laser irradiation positions of the n times of excimer laser annealing and crystallization of the amorphous silicon regions corresponding to the other driving transistors, and the n excimer lasers of the same driving transistor are in a one-to-one correspondence. The total coverage of the irradiation position covers the amorphous silicon region corresponding to the driving transistor, wherein n is a positive integer greater than or equal to 2.

Optionally, the excimer laser irradiation positions of at least two times in the n times of excimer laser annealing and crystallization of the amorphous silicon region corresponding to the same driving transistor are different, or the same driving transistor corresponds to the amorphous silicon region. The n excimer laser irradiation positions for the n times of excimer laser annealing and crystallization are all the same.

Optionally, perform excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, including:

Perform an excimer laser annealing and crystallization on the amorphous silicon region corresponding to each of the driving transistors at the same excimer laser irradiation position, and the center of the amorphous silicon region corresponding to each of the driving transistors is located at the excimer laser irradiation Spot's symmetry line.

Optionally, perform excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, including:

The same beam of excimer laser is used to simultaneously perform excimer laser annealing and crystallization on the amorphous silicon regions corresponding to the driving transistors in the same row or the driving transistors in the same column.

Optionally, before performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the method further includes:

patterning the amorphous silicon layer to form amorphous silicon pattern regions corresponding to a plurality of the driving transistors;

Performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner includes:

Excimer laser annealing and crystallization are performed on each of the amorphous silicon pattern regions in the same manner to form polysilicon pattern regions corresponding to the plurality of driving transistors respectively.

Optionally, after performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the method further includes:

The crystallized amorphous silicon layer is patterned to form polysilicon pattern regions corresponding to the plurality of driving transistors respectively.

Optionally, the method further includes:

The excimer laser annealing and crystallization are performed on the amorphous silicon region corresponding to the driving transistor while the excimer laser annealing and crystallization are performed on the amorphous silicon region corresponding to the switching transistor.

Optionally, after forming the polysilicon pattern regions corresponding to the plurality of driving transistors, the method further includes:

processing the polysilicon pattern to form a source region, a drain region and a channel region;

forming other film layers of the driving transistor;

A light-emitting functional layer is formed.

According to another aspect of the present invention, a display panel is provided, which is manufactured by the manufacturing method of a display panel described in any of the present invention.

The technical solution of the embodiment of the present invention is to perform excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, so that the crystallization conditions of the amorphous silicon region corresponding to each driving transistor are the same, so that the The threshold voltage of each driving transistor is the same or similar, and the electrical characteristics of each driving transistor are the same or similar, so that the display characteristics of each sub-pixel of the entire display panel are the same or similar, and the display uniformity is improved.

It should be understood that the content described in this section is not intended to identify key or critical features of the embodiments of the invention, nor is it intended to limit the scope of the invention. Other features of the present invention will become readily understood from the following description.

Description of drawings

In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative effort.

1 is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention;

FIG. 2 is a schematic diagram of a display panel according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of another display panel provided by an embodiment of the present invention;

4 is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention;

FIG. 5 is a schematic diagram of another display panel provided by an embodiment of the present invention;

FIG. 6 is a schematic diagram of another display panel provided by an embodiment of the present invention;

7 is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention;

FIG. 8 is a flowchart of another method for fabricating a display panel provided by an embodiment of the present invention.

Detailed ways

In order to make those skilled in the art better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments are part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

It should be noted that the terms "first", "second" and the like in the description and claims of the present invention and the above drawings are used to distinguish similar objects, and are not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used may be interchanged under appropriate circumstances such that the embodiments of the invention described herein can be practiced in sequences other than those illustrated or described herein. Furthermore, the terms "comprising" and "having" and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those expressly listed Rather, those steps or units may include other steps or units not expressly listed or inherent to these processes, methods, products or devices.

As mentioned in the background art, the existing display panel has the problem of uneven display. The inventor found through research that the reason for this problem is: the low temperature polysilicon-active organic light emitting diode (LTPS-AMOLED) display panel drives The characteristics of the transistor are greatly affected by the crystallization of polysilicon (P-Si). The whole surface of a-Si crystallizes into P-Si at low temperature. However, due to the influence of the distance between the two adjacent light beams irradiating a-si in the ELA crystallization process, there is a periodic change in the P-Si crystal, which makes the P-Si layer crystallize unevenly, resulting in the pattern of the p-si layer being changed. After the driving transistors are formed, the characteristics of the driving transistors of different sub-pixels are inconsistent, so that the LTPS-AMOLED display panel without the compensation circuit causes uneven display due to the difference in the characteristics of the driving crystals between the pixels.

Based on the above problems, an embodiment of the present invention provides a method for manufacturing a display panel. FIG. 1 is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention. Referring to FIG. 1 , the method includes:

S110. Provide a substrate.

Wherein, the substrate is a transparent substrate, which may be a rigid substrate or a flexible substrate.

S120, forming an amorphous silicon layer on the substrate.

The amorphous silicon layer is formed on the entire surface of the substrate.

S130 , performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner.

The display panel includes a plurality of sub-pixels, each sub-pixel includes a driving circuit and an organic light-emitting unit, the driving circuit is used to drive the organic light-emitting unit to emit light, the driving circuit includes a driving transistor, and the driving transistor is used to output the driving organic light-emitting unit to the organic light-emitting unit. The drive current for the cell to emit light. The threshold voltage of the driving transistor has a certain influence on the driving current. The driving transistor includes an active layer, and the active layer is formed of a polysilicon layer. The crystallization of the polysilicon layer has a certain influence on the threshold voltage.

FIG. 2 is a schematic diagram of a display panel provided by an embodiment of the present invention. Referring to FIG. 2 , when the display panel is fabricated, the area 10 corresponding to each sub-pixel has been determined, and the position of each driving transistor has been determined. After the silicon layer 30, the amorphous silicon region 11 corresponding to each driving transistor on the amorphous silicon layer can be determined. Performing excimer laser annealing and crystallization on the amorphous silicon region 11 corresponding to each driving transistor in the same manner may be performing the same number of excimer laser annealing and crystallization on the amorphous silicon region 11 corresponding to each driving transistor, and Each time the excimer laser is annealed and crystallized, the excimer laser irradiation positions of the amorphous silicon regions corresponding to different driving transistors are the same. The same excimer laser irradiation positions of the amorphous silicon regions corresponding to different driving transistors means that when different driving transistors are crystallized, the excimer laser beam irradiation positions and the relative positions of the amorphous silicon regions corresponding to the driving transistors are the same.

The specific crystallization method can be as follows: the number of times of excimer laser annealing and crystallization of the amorphous silicon region 11 corresponding to each driving transistor is once, and the irradiation position of the excimer laser light is the same when the amorphous silicon region 11 corresponding to each driving transistor is crystallized. For example, both are the first irradiation positions 21 in FIG. 2 . The excimer laser annealing and crystallization times of the amorphous silicon region corresponding to each driving transistor are multiple times, and the excimer laser irradiation positions corresponding to the multiple crystallizations of the amorphous silicon region corresponding to the same driving transistor may be the same or different. When the irradiation positions corresponding to the multiple crystallizations of the same driving transistor are different, the multiple irradiation positions used for the multiple crystallizations of the amorphous silicon region 11 corresponding to each driving transistor are respectively different from the multiple irradiation positions used for the multiple crystallizations of other driving transistors. The irradiation positions are in the same one-to-one correspondence. For example, each driving transistor uses the first irradiation position 21 and the second irradiation position (not shown in the figure) to perform primary crystallization respectively.

In the embodiment of the present invention, the amorphous silicon region corresponding to each driving transistor is crystallized by excimer laser annealing in the same manner, so that the crystallization conditions of the amorphous silicon region corresponding to each driving transistor are the same, so that each driving transistor has the same crystallization condition. The threshold voltages are the same or similar, and the electrical characteristics of each driving transistor are the same or similar, so that the display characteristics of each sub-pixel of the entire display panel are the same or similar, and the display uniformity is improved.

The specific crystallization method of the driving transistor is described below:

Optionally, perform excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, including:

Perform n times of excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor, and the n excimer laser irradiation positions of the n times of excimer laser annealing and crystallization of the amorphous silicon region corresponding to each driving transistor are respectively The n excimer laser irradiation positions of the n times of excimer laser annealing and crystallization of the amorphous silicon region corresponding to other driving transistors are the same one-to-one, and the n excimer laser irradiation positions of the amorphous silicon region corresponding to the same driving transistor are the same. The total coverage covers the amorphous silicon region corresponding to the driving transistor, where n is a positive integer greater than or equal to 2.

This arrangement ensures that the crystallization conditions of different driving transistors are the same, and the threshold voltage of each driving transistor is the same or similar, so that the display characteristics of each sub-pixel of the entire display panel are the same or similar, and the display uniformity is improved. At the same time, through multiple crystallization The crystallization condition of the amorphous silicon region corresponding to each driving transistor is better, the characteristics of the driving transistor are further improved, and the display effect of the display panel is improved. In addition, the total coverage of the n excimer laser irradiation positions of the same driving transistor covers the amorphous silicon region corresponding to the driving transistor, ensuring that the entire amorphous silicon region is converted into polysilicon, and improving the driving characteristics of the driving transistor.

It should be noted that the irradiation positions of the n excimer lasers may all be the same, different or partially different, which is not specifically limited in this embodiment. The crystallization sequence of different driving transistors during specific crystallization is not specifically limited in this embodiment. For example, one driving transistor can be crystallized n times, and then the next driving transistor can be crystallized n times, or the same excimer laser can be used. Each driving transistor is crystallized once in sequence at the irradiation position, and then each driving transistor is crystallized once in sequence at the next excimer laser irradiation position until n times of crystallization are completed.

Optionally, the excimer laser irradiation positions of the n times of excimer laser annealing and crystallization of the amorphous silicon region corresponding to the same driving transistor are all the same.

Specifically, by setting the same irradiation position for n times of excimer laser annealing and crystallization, the number of alignments of the excimer laser can be reduced, and the difficulty of alignment of the excimer laser can be reduced.

Optionally, the excimer laser irradiation positions of at least two times in the n times of excimer laser annealing and crystallization of the amorphous silicon region corresponding to the same driving transistor are different.

In this way, different regions of the amorphous silicon region corresponding to the driving transistor can be crystallized to different degrees in a targeted manner according to the needs, so that the crystallized polysilicon layer is more in line with the characteristic requirements of the driving transistor, and the driving characteristics of the driving transistor are improved. to improve the display effect of the display panel.

FIG. 3 is a schematic diagram of another display panel provided by an embodiment of the present invention. Referring to FIG. 2 and FIG. 3 , areas 10 corresponding to a plurality of sub-pixels are shown in FIG. 2 and FIG. 3 . The amorphous silicon region 11, and the first irradiation position 21 and the second irradiation position 22 of the excimer laser are shown.

Referring to FIG. 2 , the amorphous silicon region 11 corresponding to each driving transistor may use the first irradiation position 21 during n times of excimer laser annealing and crystallization. Referring to FIG. 3, the amorphous silicon region 11 corresponding to each driving transistor may use multiple irradiation positions such as a first irradiation position 21 and a second irradiation position 22 in the excimer laser annealing and crystallization.

Optionally, performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, including: performing the same excimer laser irradiation on the amorphous silicon region corresponding to each driving transistor once at the same excimer laser irradiation position. The excimer laser is annealed and crystallized, and the center of the amorphous silicon region corresponding to each driving transistor is located on the symmetry line of the excimer laser irradiation spot.

Specifically, referring to FIG. 2 , when excimer laser annealing and crystallization is performed on the amorphous silicon region corresponding to the driving transistor, it is necessary to ensure that the excimer laser irradiation position covers the amorphous silicon region, and due to the symmetry of the excimer laser irradiation spot The line (ie, the center position) is the place with the strongest energy. By setting the center of the amorphous silicon region 11 corresponding to the driving transistor on the symmetry line of the excimer laser irradiation spot, the center of the amorphous silicon region is the place with the strongest energy. It is ensured that each region of the entire amorphous silicon region can be better crystallized.

The above description of the crystallization method of the driving transistor takes a single driving transistor as an example. In actual crystallization, the driving transistor can be crystallized in units of regions, exemplarily in units of rows or columns. The amorphous silicon regions corresponding to one row or one column of driving transistors are crystallized.

Optionally, perform excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, including:

The same beam of excimer laser is used to simultaneously perform excimer laser annealing and crystallization for the amorphous silicon regions corresponding to the same row of drive transistors or the same column of drive transistors.

Specifically, referring to FIG. 2 and FIG. 3 , the amorphous silicon region 11 corresponding to one row of drive transistors or multiple rows of drive transistors or one column of drive transistors or multiple columns of drive transistors may be crystallized for each crystallization, which is not performed in this embodiment. Specific restrictions. 2-3 only exemplarily show that the amorphous silicon regions 11 corresponding to one row of driving transistors are crystallized each time, and each first irradiation position 21 in the figures covers one row of driving transistors. By crystallizing the amorphous silicon regions 11 corresponding to the driving transistors in row units, the center distance between the excimer laser beams during the crystallization process is increased to be equal to the center distance between the driving transistor rows. The center distance between the laser beams is increased from the previous 15-25um to nearly 55-60um, which improves the crystallization efficiency and increases the productivity.

FIG. 4 is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention. Referring to FIG. 4 , the method includes:

S110. Provide a substrate.

S120, forming an amorphous silicon layer on the substrate.

S121 , patterning the amorphous silicon layer to form amorphous silicon pattern regions corresponding to the plurality of driving transistors respectively.

S131 , performing excimer laser annealing and crystallization on each of the amorphous silicon pattern regions in the same manner to form polysilicon pattern regions corresponding to the plurality of driving transistors respectively.

Specifically, FIG. 5 is a schematic diagram of another display panel provided by an embodiment of the present invention, and FIG. 6 is a schematic diagram of another display panel provided by an embodiment of the present invention. Referring to FIG. 5 and FIG. The layer is patterned to form a plurality of amorphous silicon pattern regions 12 . The amorphous silicon layer may be patterned using a photolithographic process.

In this embodiment, the amorphous silicon layer is first patterned to form amorphous silicon pattern regions 12 corresponding to a plurality of driving transistors, and then excimer laser annealing and crystallization are performed on each amorphous silicon pattern region 12 in the same manner. , forming a polysilicon pattern area corresponding to a plurality of driving transistors. Since the amorphous silicon layer has been patterned during crystallization, the amorphous silicon pattern area 12 can be crystallized more accurately, reducing the difference between different driving transistors. , to improve the display uniformity of the display panel.

FIG. 7 is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention. Referring to FIG. 7 , the method includes:

S110, providing a substrate;

S120, forming an amorphous silicon layer on the substrate;

S130 , performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner.

S140 , patterning the crystallized amorphous silicon layer to form polysilicon pattern regions corresponding to the plurality of driving transistors respectively.

Specifically, referring to FIG. 2 and FIG. 3 , after the amorphous silicon layer is formed, the amorphous silicon region 11 corresponding to the driving transistor can be directly determined according to the position of the driving transistor, and the amorphous silicon region 11 can be directly crystallized. There is an alignment mark on it, which can be used to complete the precise alignment during crystallization.

Optionally, the manufacturing method of the display panel further includes:

The excimer laser annealing and crystallization are performed on the amorphous silicon region corresponding to the driving transistor while the excimer laser annealing and crystallization are performed on the amorphous silicon region corresponding to the switching transistor.

Specifically, the driving circuit of the sub-pixel also includes a switching transistor. Since the switching transistor does not have high requirements on the crystallization of the active layer, only part of the region can be crystallized to meet the performance requirements. Simultaneous crystallization of the switching transistors is satisfied by adjusting the size or irradiation position of the excimer laser beam.

It should be noted that the driving circuit of each sub-pixel of the display panel according to the embodiment of the present invention may include one driving transistor and one switching transistor, because the method of the embodiment of the present invention can reduce the difference between the driving transistors, so that each The threshold voltages of the driving transistors are the same or similar, so that the display panel has better display uniformity. Therefore, the method of the embodiment of the present invention is applicable to the driving circuit without setting the compensation circuit, and only setting the driving circuit to include a driving transistor, a switching transistor and a the case of capacitors. Of course, in order to further improve the display performance of the display panel, the method of the embodiment of the present invention is also applicable to the case where the driving circuit includes a plurality of transistors and capacitors.

FIG. 8 is a flowchart of another method for fabricating a display panel provided by an embodiment of the present invention. Referring to FIG. 8 , the method includes:

S110, providing a substrate;

S120, forming an amorphous silicon layer on the substrate;

S130, performing excimer laser annealing and crystallization on the amorphous silicon region corresponding to each driving transistor in the same quasi-method.

S140 , patterning the crystallized amorphous silicon layer to form polysilicon pattern regions corresponding to the plurality of driving transistors respectively.

S150, processing the polysilicon pattern region to form a source region, a drain region and a channel region.

S160, forming other film layers of the driving transistor.

S170, forming a light-emitting functional layer.

The driving transistor also includes a gate, a source and a drain. When the driving transistor is a bottom gate type, the gate can be fabricated before the source, drain and channel regions are formed to form the source, drain and channel regions. After that, the formation of the source and drain electrodes can proceed. When the driving transistor is of the top-gate type, the gate, the source and the drain are sequentially formed after the source region, the drain region and the channel region are formed. The light-emitting functional layer may include film layers such as an anode, a cathode, and an organic light-emitting layer.

It should be noted that FIG. 8 only exemplarily shows that the amorphous silicon layer is first crystallized, then the crystallized amorphous silicon layer is patterned, and then the source region, the drain region and the channel region are formed. case, and is not intended to limit the present invention. In other embodiments, the amorphous silicon layer can also be patterned first and then crystallized, and the source region, the drain region and the channel region are formed after the crystallization.

The embodiment of the present invention also provides a display panel, which is manufactured by using the manufacturing method of the display panel described in any embodiment of the present invention.

It should be understood that steps may be reordered, added or deleted using the various forms of flow shown above. For example, the steps described in the present invention can be performed in parallel, sequentially or in different orders, and as long as the desired results of the technical solutions of the present invention can be achieved, no limitation is imposed herein.

The above-mentioned specific embodiments do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may occur depending on design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1. A method for manufacturing a display panel is characterized by comprising the following steps:

providing a substrate;

forming an amorphous silicon layer on the substrate;

and performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same way.

2. The method of claim 1, wherein the performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner comprises:

and carrying out n times of excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor, wherein n excimer laser irradiation positions of the n times of excimer laser annealing crystallization of the amorphous silicon region corresponding to each driving transistor are respectively in one-to-one correspondence with n excimer laser irradiation positions of the n times of excimer laser annealing crystallization of the amorphous silicon regions corresponding to other driving transistors, and the total coverage range of the n excimer laser irradiation positions of the same driving transistor covers the amorphous silicon region corresponding to the driving transistor, wherein n is a positive integer greater than or equal to 2.

3. The method of claim 2,

at least two excimer laser irradiation positions in n times of excimer laser annealing crystallization of the amorphous silicon region corresponding to the same drive transistor are different, or the n excimer laser irradiation positions in n times of excimer laser annealing crystallization of the amorphous silicon region corresponding to the same drive transistor are the same.

4. The method of claim 1, wherein the performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner comprises:

and carrying out excimer laser annealing crystallization once on the amorphous silicon region corresponding to each driving transistor at the same excimer laser irradiation position, wherein the center of the amorphous silicon region corresponding to each driving transistor is positioned on the symmetry line of the excimer laser irradiation spot.

5. The method of claim 1, wherein the performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner comprises:

and simultaneously performing excimer laser annealing crystallization on the amorphous silicon regions corresponding to the driving transistors in the same row or the driving transistors in the same column by using the same beam of excimer laser.

6. The method according to any one of claims 1 to 5, wherein before performing the excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the method further comprises:

patterning the amorphous silicon layer to form amorphous silicon pattern regions corresponding to the plurality of driving transistors respectively;

the excimer laser annealing crystallization of the amorphous silicon region corresponding to each driving transistor in the same way comprises:

and performing excimer laser annealing crystallization on each amorphous silicon pattern region in the same manner to form a polysilicon pattern region corresponding to each of the plurality of driving transistors.

7. The method according to any one of claims 1 to 5, wherein after performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each driving transistor in the same manner, the method further comprises:

and patterning the crystallized amorphous silicon layer to form a polysilicon pattern region corresponding to each of the plurality of driving transistors.

8. The method of claim 1, further comprising:

and performing excimer laser annealing crystallization on the amorphous silicon region corresponding to the switch transistor while performing excimer laser annealing crystallization on the amorphous silicon region corresponding to the drive transistor.

9. The method of claim 7, further comprising, after forming the polysilicon pattern regions corresponding to the plurality of driving transistors, respectively:

processing the polysilicon pattern to form a source region, a drain region and a channel region;

forming other film layers of the driving transistor;

and forming a light-emitting functional layer.

10. A display panel manufactured by the method for manufacturing a display panel according to any one of claims 1 to 9.

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