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CN114649278A - Electronic package and manufacturing method thereof - Google Patents

Electronic package and manufacturing method thereof Download PDF

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Publication number
CN114649278A
CN114649278A CN202011605525.XA CN202011605525A CN114649278A CN 114649278 A CN114649278 A CN 114649278A CN 202011605525 A CN202011605525 A CN 202011605525A CN 114649278 A CN114649278 A CN 114649278A
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Prior art keywords
carrier
electronic component
electronic
bonding layer
placement area
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Chinese (zh)
Inventor
曾景鸿
贾孟寰
蔡芳霖
姜亦震
林长甫
江东昇
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Siliconware Precision Industries Co Ltd
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Siliconware Precision Industries Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明涉及一种电子封装件及其制法,包括将电子元件设于承载件的置晶区内并电性连接该承载件,且将结合层设于该承载件的置晶区外以环绕该电子元件,再将散热件结合结合层以设于该承载件上并遮盖该电子元件,以经由该电子元件相对该置晶区偏转设于该承载件上,使该电子元件的轮廓未对应该置晶区的边界,以平衡该电子封装件的应力分布,避免该散热件与该电子元件之间发生脱层。

Figure 202011605525

The invention relates to an electronic package and a method for making the same, comprising arranging electronic components in a die placement area of a carrier and electrically connecting the carrier, and arranging a bonding layer outside the die placement area of the carrier to surround the carrier For the electronic component, the heat sink is combined with the bonding layer to be disposed on the carrier and cover the electronic component, so that the electronic component can be deflected relative to the die placement area on the carrier, so that the outline of the electronic component is not aligned. The boundary of the die area should be placed to balance the stress distribution of the electronic package and avoid delamination between the heat sink and the electronic component.

Figure 202011605525

Description

电子封装件及其制法Electronic package and method of making the same

技术领域technical field

本发明有关一种半导体装置,尤指一种具散热件的电子封装件及其制法。The present invention relates to a semiconductor device, in particular to an electronic package with a heat sink and a manufacturing method thereof.

背景技术Background technique

随着电子产品在功能及处理速度的需求的提升,作为电子产品的核心组件的半导体芯片需具有更高密度的电子元件(Electronic Components)及电子电路(ElectronicCircuits)。为了迅速将热能散逸至大气中,通常在半导体封装结构中配置散热片(HeatSink或Heat Spreader),该散热片通常经由散热胶结合至芯片背面,以借散热胶与散热片逸散出半导体芯片所产生的热量。With the improvement of the function and processing speed of electronic products, the semiconductor chip, which is the core component of the electronic product, needs to have higher-density electronic components and electronic circuits. In order to quickly dissipate the heat energy to the atmosphere, a heat sink (HeatSink or Heat Spreader) is usually arranged in the semiconductor package structure. heat generated.

如图1A所示,现有散热型的半导体封装件1的制法先将一半导体芯片11以其作用面11a利用覆晶接合方式(即通过导电凸块110与底胶111)设于一封装基板10的置晶区A(如图1A’所示)上,再将一散热件13以其顶片130经由导热层12结合于该半导体芯片11的非作用面11b上,且该散热件13的支撑脚131经由粘着层14架设于该封装基板10上。接着,进行封装压模作业,以供封装胶体(图略)包覆该半导体芯片11及散热件13,并使该散热件13的顶片130外露出封装胶体而直接与大气接触。As shown in FIG. 1A , in a conventional method for manufacturing a heat dissipation type semiconductor package 1 , a semiconductor chip 11 and its active surface 11 a are firstly mounted on a package by flip-chip bonding (ie, through conductive bumps 110 and underfill 111 ). On the die placement area A of the substrate 10 (as shown in FIG. 1A ′), a heat sink 13 and its top sheet 130 are bonded to the non-active surface 11 b of the semiconductor chip 11 via the thermal conductive layer 12 , and the heat sink 13 The supporting feet 131 are mounted on the package substrate 10 via the adhesive layer 14 . Next, an encapsulation molding operation is performed so that an encapsulation compound (not shown) covers the semiconductor chip 11 and the heat sink 13, and the top sheet 130 of the heat sink 13 is exposed to the encapsulation compound to directly contact the atmosphere.

于运行时,该半导体芯片11所产生的热能经由该非作用面11b、导热层12而传导至该散热件13以散热至该半导体封装件1的外部。During operation, the heat energy generated by the semiconductor chip 11 is conducted to the heat dissipation member 13 through the non-active surface 11 b and the thermal conductive layer 12 to dissipate heat to the outside of the semiconductor package 1 .

然而,现有半导体封装件1中,该半导体芯片11于设置后的轮廓对应该置晶区A的边界(如图1A’所示),使该散热件13及该半导体芯片11两者因与该导热层12具有极大的热膨胀系数差异(CTE Mismatch)而所产生的应力无法分散,导致该半导体封装件1发生变形的情况(即翘曲),如图1B所示,致使该散热件13的顶片130与变形的导热层12’(或与该半导体芯片11)之间容易发生脱层(如图1B所示的间隙t),不仅造成导热效果下降,且会降低该半导体封装件1的信赖性。However, in the conventional semiconductor package 1 , the contour of the semiconductor chip 11 after placement corresponds to the boundary of the placement die area A (as shown in FIG. 1A ′), so that both the heat sink 13 and the semiconductor chip 11 are related to each other. The thermally conductive layer 12 has a great difference in the coefficient of thermal expansion (CTE Mismatch) and the generated stress cannot be dispersed, causing the semiconductor package 1 to deform (ie warp), as shown in FIG. 1B , causing the heat sink 13 Delamination (gap t as shown in FIG. 1B ) easily occurs between the top sheet 130 and the deformed thermal conductive layer 12 ′ (or with the semiconductor chip 11 ), which not only causes the thermal conductivity to decrease, but also reduces the semiconductor package 1 's reliability.

因此,如何克服上述现有技术的种种问题,实已成为目前业界亟待克服的难题。Therefore, how to overcome the above-mentioned various problems of the prior art has actually become a difficult problem to be overcome in the current industry.

发明内容SUMMARY OF THE INVENTION

鉴于上述现有技术的种种缺陷,本发明提供一种电子封装件及其制法,避免散热件与电子元件之间发生脱层。In view of the above-mentioned defects of the prior art, the present invention provides an electronic package and a manufacturing method thereof to avoid delamination between the heat sink and the electronic component.

本发明的电子封装件,包括:承载件,其定义有置晶区;电子元件,其设于该承载件的置晶区内并电性连接该承载件,其中,该电子元件设置于该承载件上的轮廓并未对应该置晶区之边界;结合层,其设该承载件上且位于该置晶区外,以环绕该电子元件;以及散热件,其结合该结合层以设于该承载件上并遮盖该电子元件。The electronic package of the present invention includes: a carrier, which defines a die placement area; an electronic component, which is arranged in the die placement area of the carrier and is electrically connected to the carrier, wherein the electronic component is arranged on the carrier The contour on the component does not correspond to the boundary of the die placement area; the bonding layer is provided on the carrier and located outside the die placement area to surround the electronic component; and the heat sink is combined with the bonding layer to be provided on the on the carrier and cover the electronic component.

本发明还提供一种电子封装件的制法,包括:提供一定义有置晶区的承载件;将电子元件设于该承载件的置晶区内并电性连接该承载件,且将结合层设于该承载件的置晶区外并环绕该电子元件,其中,该电子元件设置于该承载件上的轮廓并未对应该置晶区的边界;以及将散热件结合该结合层,使该散热件设于该承载件上并遮盖该电子元件。The present invention also provides a method for manufacturing an electronic package, comprising: providing a carrier defining a die placement area; arranging an electronic component in the die placement area of the carrier and electrically connecting the carrier, and combining the The layer is arranged outside the chip placement area of the carrier and surrounds the electronic component, wherein the outline of the electronic component disposed on the carrier does not correspond to the boundary of the die placement area; and the heat sink is combined with the bonding layer to make The heat sink is arranged on the carrier and covers the electronic component.

前述的电子封装件及其制法中,该置晶区为矩形,且该电子元件呈四边形轮廓,以令该电子元件的角落位于该置晶区的边线上。例如,该电子元件的角落对准该结合层。In the aforementioned electronic package and its manufacturing method, the die placement area is rectangular, and the electronic component has a quadrangular outline, so that the corners of the electronic component are located on the edge of the die placement area. For example, the corners of the electronic component are aligned with the bonding layer.

前述的电子封装件及其制法中,该结合层为具有多个缺口的环体,其中,该多个缺口的位置相互对齐或未对齐。例如,该电子元件呈矩形轮廓,其角落未对准该缺口。或者,该环体呈矩形,且该多个缺口分别位于该环体的不同环边上,较佳者,该环体的单一环边上的缺口的尺寸为该环边的尺寸的1/10。In the aforementioned electronic package and its manufacturing method, the bonding layer is a ring body with a plurality of notches, wherein the positions of the plurality of notches are aligned or not aligned with each other. For example, the electronic component has a rectangular profile with corners that are not aligned with the notch. Alternatively, the ring body is rectangular, and the plurality of notches are respectively located on different ring sides of the ring body. Preferably, the size of the notches on a single ring side of the ring body is 1/10 of the size of the ring side .

前述的电子封装件及其制法中,该结合层包含相分离的第一区段与第二区段,以于该第一区段与该第二区段之间形成多个缺口,且该第一区段的形状与该第二区段的形状不相同。例如,该承载件用以接触结合该第一区段的面积与该承载件用以接触结合该第二区段的面积相同。In the aforementioned electronic package and its manufacturing method, the bonding layer includes a first segment and a second segment separated from each other, so as to form a plurality of gaps between the first segment and the second segment, and the The shape of the first section is not the same as the shape of the second section. For example, the area of the carrier for contacting and combining with the first section is the same as the area of the carrier for contacting and combining with the second section.

由上可知,本发明的电子封装件及其制法中,主要经由该电子元件于设置于该承载件上后的轮廓未对应该置晶区的边界,使该承载件能有效平衡其上应力分布,故相比于现有技术,该电子封装件能维持该散热件与该承载件之间的距离,以避免该散热件与该电子元件之间发生脱层,进而能提升该电子封装件的信赖性。As can be seen from the above, in the electronic package and the manufacturing method thereof of the present invention, the outline of the electronic component disposed on the carrier does not correspond to the boundary of the die placement area, so that the carrier can effectively balance the stress on the carrier Therefore, compared with the prior art, the electronic package can maintain the distance between the heat sink and the carrier, so as to avoid delamination between the heat sink and the electronic element, thereby improving the electronic package. 's reliability.

此外,,本发明经由该缺口的位置不会朝向该电子元件的角落的设计,以利于提升该散热件的覆盖率及平面度,因而能有效降低该电子封装件的翘曲程度。In addition, the present invention can improve the coverage and flatness of the heat sink through the design that the position of the notch does not face the corner of the electronic component, thereby effectively reducing the degree of warpage of the electronic package.

另外,本发明经由该结合层的单一环边上的缺口的尺寸为该环边的尺寸的1/10的设计,以利于该承载件平衡其上的应力分布,因而能有效降低该电子封装件的翘曲程度。In addition, in the present invention, the size of the notch on the single ring edge of the bonding layer is 1/10 of the size of the ring edge, so as to help the carrier to balance the stress distribution thereon, thereby effectively reducing the electronic package. degree of warpage.

另外,本发明经由该电子元件于设置于该承载件上后的轮廓未对应该置晶区的边界,以利于该承载件的线路布设能有效搭配特殊设计的电子元件,因而能增强该电子元件的运算能力。In addition, in the present invention, the outline of the electronic component disposed on the carrier does not correspond to the boundary of the die area, so that the circuit layout of the carrier can be effectively matched with the specially designed electronic component, thereby enhancing the electronic component. computing power.

附图说明Description of drawings

图1A为现有半导体封装件的剖视示意图。FIG. 1A is a schematic cross-sectional view of a conventional semiconductor package.

图1A’为图1A的上视平面示意图。Fig. 1A' is a schematic top plan view of Fig. 1A.

图1B为现有半导体封装件的不良状态的剖视示意图。FIG. 1B is a schematic cross-sectional view of a defective state of a conventional semiconductor package.

图2A至图2B为本发明的电子封装件的制法的剖视示意图。2A to 2B are schematic cross-sectional views of the manufacturing method of the electronic package of the present invention.

图3A为图2A的上视平面示意图。FIG. 3A is a schematic top plan view of FIG. 2A .

图3B及图3C为图3A的不同态样的上视平面示意图。3B and 3C are schematic top plan views of different aspects of FIG. 3A .

附图标记说明Description of reference numerals

1:半导体封装件1: Semiconductor package

10:封装基板10: Package substrate

11:半导体芯片11: Semiconductor chip

11a,21a:作用面11a, 21a: Action surface

11b,21b:非作用面11b, 21b: Non-active surfaces

110,210:导电凸块110,210: Conductive bumps

111,211:底胶111,211: Primer

12,12’,22:导热层12, 12', 22: Thermally conductive layer

13,23:散热件13,23: Heat sink

130:顶片130: Top sheet

131,231:支撑脚131, 231: Support feet

14:粘着层14: Adhesive layer

2:电子封装件2: Electronic packages

20:承载件20: Carrier

21:电子元件21: Electronic Components

230:散热体230: heat sink

24,34:结合层24,34: Bonding Layer

24a,24b,24c,24d:环边24a, 24b, 24c, 24d: Ring edge

240,340:缺口240,340: Notch

341:第一区段341: First Section

342:第二区段342: Second Section

A:置晶区A: Crystal placement area

D,R:面积D, R: area

L:边线L: sideline

t:间隙t: gap

X1,X2:对角线X1, X2: Diagonal

Y:轴线。Y: axis.

具体实施方式Detailed ways

以下经由特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。The embodiments of the present invention are described below through specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

须知,本说明书附图所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供本领域技术人员的了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“第一”、“第二”、“一”等的用语,亦仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当亦视为本发明可实施的范畴。It should be noted that the structures, proportions, sizes, etc. shown in the drawings of this specification are only used to cooperate with the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the conditions for the implementation of the present invention. , therefore does not have technical substantive significance, any structural modification, proportional relationship change or size adjustment, without affecting the effect that the present invention can produce and the purpose that can be achieved, should still fall within the scope of the present invention. The technical content must be able to cover the scope. At the same time, the terms such as "above", "first", "second", "one", etc. quoted in this specification are only for the convenience of description and clarity, and are not used to limit the scope of the present invention. Changes or adjustments of their relative relationships, without substantial changes to the technical content, should also be regarded as the scope of the present invention.

图2A至图2B为本发明的电子封装件2的制法的剖面示意图。2A to 2B are schematic cross-sectional views of the manufacturing method of the electronic package 2 of the present invention.

如图2A所示,于一承载件20上设置至少一电子元件21及形成结合层24,以令该电子元件21电性连接该承载件20,其中,该承载件20定义有至少一用以设置该电子元件21的置晶区A(如图3A所示),且令该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界。As shown in FIG. 2A , at least one electronic element 21 is disposed on a carrier 20 and a bonding layer 24 is formed, so that the electronic element 21 is electrically connected to the carrier 20 , wherein the carrier 20 defines at least one for The die placement area A of the electronic component 21 is provided (as shown in FIG. 3A ), and the outline of the electronic component 21 after being placed on the carrier 20 does not correspond to the boundary of the die placement area A.

于本实施例中,该承载件20例如为具有核心层与线路结构的封装基板(substrate)或无核心层(coreless)的线路结构,其于介电材上形成线路层,如扇出(fanout)型重布线路层(redistribution layer,简称RDL)。例如,该承载件20的置晶区A定义为矩形,如图3A所示的正方形。应可理解地,该承载件20亦可为其它可供承载如芯片等电子元件的承载结构,例如导线架(lead frame)或硅中介板(silicon interposer),并不限于上述。In this embodiment, the carrier 20 is, for example, a package substrate with a core layer and a circuit structure or a circuit structure without a core layer, which forms a circuit layer on a dielectric material, such as a fanout. ) type redistribution layer (redistribution layer, referred to as RDL). For example, the die placement area A of the carrier 20 is defined as a rectangle, such as a square as shown in FIG. 3A . It should be understood that the carrier 20 can also be other carrier structures capable of carrying electronic components such as chips, such as a lead frame or a silicon interposer, which is not limited to the above.

此外,该电子元件21为主动元件、被动元件或其二者组合等,其呈如矩形的四边形片体(如图3A所示的正方形片体),以令该电子元件21相对该置晶区A偏转配置,如转90度角,使该电子元件21的角落位于该置晶区A的边线L上而未对应配合坐落于该置晶区A的角落处,其中,该主动元件例如为半导体芯片,且该被动元件例如为电阻、电容及电感。例如,该电子元件21具有相对的作用面21a及非作用面21b,且该作用面21a设有多个导电凸块210,使该电子元件21借该些导电凸块210以覆晶方式结合并电性连接该承载件20,并可以底胶211包覆该些导电凸块210。然而,有关该电子元件21连接该承载件20的方式繁多,如打线封装方式,并不限于上述。In addition, the electronic element 21 is an active element, a passive element, or a combination of the two, etc., and it is in the form of a rectangular quadrilateral sheet (the square sheet as shown in FIG. 3A ), so that the electronic element 21 is opposite to the die placement area. A deflected configuration, such as turning a 90-degree angle, makes the corner of the electronic element 21 located on the edge L of the die placement area A and not correspondingly located at the corner of the die placement area A, wherein the active element is, for example, a semiconductor chip, and the passive components are, for example, resistors, capacitors and inductors. For example, the electronic device 21 has an opposing active surface 21a and a non-active surface 21b, and the active surface 21a is provided with a plurality of conductive bumps 210, so that the electronic device 21 is combined with the conductive bumps 210 in a flip-chip manner. The carrier 20 is electrically connected, and the conductive bumps 210 can be covered with a primer 211 . However, there are many ways of connecting the electronic component 21 to the carrier 20 , such as wire bonding and packaging, and are not limited to the above.

另外,该电子元件21的非作用面21b上可形成如导热介面材(Thermal InterfaceMaterial,简称TIM)或一般导热胶的导热层22。In addition, a thermal conductive layer 22 such as a thermal interface material (Thermal Interface Material, TIM for short) or a general thermal conductive adhesive may be formed on the non-active surface 21 b of the electronic component 21 .

另外,该结合层24为如胶材的粘着层,其位于于该承载件20的边缘,以环绕该电子元件21的外围,使该结合层24呈现具有多个缺口240的矩形环体,且该多个缺口240形成于四个环边24a,24b,24c,24d的其中两者上,如图3A及图3B所示。例如,该些缺口240形成于相对的两环边24a,24b上,且该些缺口240的位置可相互对齐(如图3A所示的同一轴线Y)或未对齐(如图3B所示),以令该电子元件21的角落对准该结合层24,而不会对准该些缺口240,即该电子元件21的对角线X1,X2不会延伸通过该些缺口240。较佳地,于该结合层24的具有该些缺口240的两环边24a,24b的其中一者中,如图3B所示,该承载件20对应外露于该缺口240的面积(长度)R为该承载件20用以接触结合该环边24a的面积(长度)D的1/10。In addition, the bonding layer 24 is an adhesive layer such as glue, which is located at the edge of the carrier 20 to surround the periphery of the electronic component 21, so that the bonding layer 24 presents a rectangular ring body with a plurality of notches 240, and The plurality of notches 240 are formed on two of the four ring edges 24a, 24b, 24c, 24d, as shown in FIG. 3A and FIG. 3B . For example, the notches 240 are formed on the two opposite ring edges 24a, 24b, and the positions of the notches 240 may be aligned with each other (as shown in FIG. 3A on the same axis Y) or not aligned (as shown in FIG. 3B ), The corners of the electronic element 21 are aligned with the bonding layer 24 but not aligned with the notches 240 , that is, the diagonal lines X1 and X2 of the electronic element 21 do not extend through the notches 240 . Preferably, in one of the two ring edges 24a, 24b of the bonding layer 24 having the notches 240, as shown in FIG. 3B, the carrier 20 corresponds to the area (length) R exposed to the notches 240 It is 1/10 of the area (length) D of the carrier 20 for contacting and combining the ring edge 24a.

如图2B所示,将一散热件23结合该结合层24,以设于该承载件20上,且该散热件23经由导热层22设于该电子元件21上以遮盖该电子元件21。As shown in FIG. 2B , a heat sink 23 is combined with the bonding layer 24 to be disposed on the carrier 20 , and the heat sink 23 is disposed on the electronic element 21 through the thermal conductive layer 22 to cover the electronic element 21 .

于本实施例中,该散热件23具有一散热体230与多个设于该散热体230下侧的支撑脚231,该散热体230为散热片并以下侧接触该导热层22,且该支撑脚231以其端部结合该结合层24上。例如,该散热件23以压合方式设于该承载件20上,且该压合温度(即该承载件20的耐热温度)至少为120℃,最佳为125℃。In this embodiment, the heat sink 23 has a heat sink 230 and a plurality of support pins 231 disposed on the lower side of the heat sink 230 . The feet 231 are bonded to the bonding layer 24 with their ends. For example, the heat sink 23 is disposed on the carrier 20 by pressing, and the pressing temperature (ie, the heat-resistant temperature of the carrier 20 ) is at least 120°C, preferably 125°C.

此外,,该散热体230与该支撑脚231为一体成形;于其它实施例中,该散热体230与该支撑脚231可为分开制作,而非一体成形。应可理解地,有关该散热件的种类繁多,并不限于上述。In addition, the heat dissipation body 230 and the support legs 231 are integrally formed; in other embodiments, the heat dissipation body 230 and the support legs 231 may be separately formed instead of integrally formed. It should be understood that there are many types of the heat dissipation member, which are not limited to the above.

另外,该结合层24的布设面积可依需求设计。例如,该结合层34可包含相分离的第一区段341与第二区段342,如图3C所示,以于该第一区段341端处与该第二区段342端处之间形成多个缺口340,且该第一区段341的形状与该第二区段342的形状不相同。较佳者,该承载件20用以接触结合该第一区段341的面积与该承载件20用以接触结合该第二区段342的面积相同。In addition, the layout area of the bonding layer 24 can be designed according to requirements. For example, the bonding layer 34 may include a first segment 341 and a second segment 342 separated from each other, as shown in FIG. 3C , between the end of the first segment 341 and the end of the second segment 342 A plurality of notches 340 are formed, and the shape of the first section 341 is different from the shape of the second section 342 . Preferably, the area of the carrier 20 for contacting and combining with the first section 341 is the same as the area of the carrier 20 for contacting and combining with the second section 342 .

本发明的制法主要经由该电子元件21相对该置晶区A偏转配置,以令该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界,使该承载件20能有效平衡其上应力分布,故相比于现有技术,该电子封装件2能维持该散热体230(或该散热件23)与该承载件20之间的距离,以避免该散热体230(或该散热件23)与该导热层22(或该电子元件21)之间发生脱层(delamination),进而能提升该电子封装件2的信赖性。应可理解地,亦可改变该电子元件21的外观轮廓,使其于设置于该承载件20上后的轮廓未对应该置晶区A的边界,如菱形的四边形芯片本体。In the manufacturing method of the present invention, the electronic component 21 is deflected relative to the die placement area A, so that the outline of the electronic component 21 after being placed on the carrier 20 does not correspond to the boundary of the die placement area A, so that the carrier Compared with the prior art, the electronic package 2 can maintain the distance between the heat sink 230 (or the heat sink 23 ) and the carrier 20 to avoid the heat dissipation Delamination occurs between the body 230 (or the heat sink 23 ) and the thermally conductive layer 22 (or the electronic component 21 ), thereby improving the reliability of the electronic package 2 . It should be understood that the outline of the electronic component 21 can also be changed so that the outline of the electronic component 21 after being disposed on the carrier 20 does not correspond to the boundary of the placement die area A, such as a rhombus quadrilateral chip body.

此外,,经由该缺口240,340的位置不会朝向该电子元件21的角落的设计,以利于提升该散热体230(或该散热件23)的覆盖率及平面度,因而能有效降低该电子封装件2的翘曲程度。In addition, through the design that the positions of the gaps 240 and 340 do not face the corners of the electronic component 21, it is beneficial to improve the coverage and flatness of the heat sink 230 (or the heat sink 23), thereby effectively reducing the electronic package. 2 degree of warpage.

另外,经由该结合层24的单一环边24a上的缺口240的尺寸(如面积R或长度)为该环边24a的尺寸(如面积D或长度)的1/10的设计,以利于该承载件20平衡其上的应力分布,因而能有效降低该电子封装件2的翘曲程度。In addition, the size (such as area R or length) of the gap 240 on the single ring edge 24a of the bonding layer 24 is designed to be 1/10 of the size (such as area D or length) of the ring edge 24a, so as to facilitate the bearing The component 20 balances the stress distribution thereon, thereby effectively reducing the degree of warpage of the electronic package 2 .

另外,经由该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界的设计,以利于该承载件20的线路布设有效搭配特殊设计的电子元件21,因而能增强该电子元件21的运算能力。In addition, the contour of the electronic component 21 disposed on the carrier 20 does not correspond to the design of the boundary of the die placement area A, so that the circuit layout of the carrier 20 can be effectively matched with the specially designed electronic component 21, so that it can be The computing power of the electronic component 21 is enhanced.

本发明还提供一种电子封装件2,包括:一承载件20、至少一电子元件21、一结合层24,34以及一散热件23。The present invention also provides an electronic package 2 , comprising: a carrier 20 , at least one electronic component 21 , a bonding layer 24 , 34 and a heat sink 23 .

所述的承载件20具有至少一置晶区A。The carrier 20 has at least one die placement area A. As shown in FIG.

所述的电子元件21设于该承载件20上且位于该置晶区A内并电性连接该承载件20,其中,该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界。The electronic component 21 is disposed on the carrier 20 and is located in the die placement area A and is electrically connected to the carrier 20, wherein the outline of the electronic component 21 after being disposed on the carrier 20 does not correspond to the Set the boundary of the crystal region A.

所述的结合层24,34形成该承载件20上且位于该置晶区A外,以环绕该电子元件21。The bonding layers 24 and 34 are formed on the carrier 20 and located outside the die placement area A to surround the electronic device 21 .

所述的散热件23结合该结合层24,34以设于该承载件20上并遮盖该电子元件21。The heat sink 23 is combined with the bonding layers 24 and 34 to be disposed on the carrier 20 and cover the electronic element 21 .

于一实施例中,该置晶区A为矩形,且该电子元件21呈四边形轮廓,以令该电子元件21的角落位于该置晶区A的边线L上。例如,该电子元件21的角落对准该结合层24,34。In one embodiment, the die placement area A is rectangular, and the electronic device 21 has a quadrangular outline, so that the corner of the electronic device 21 is located on the edge L of the die placement area A. As shown in FIG. For example, the corners of the electronic component 21 are aligned with the bonding layers 24 , 34 .

于一实施例中,该结合层24,34为具有多个缺口240,340的环体,且该多个缺口240,340的位置相互对齐或未对齐。例如,该电子元件21呈矩形轮廓,其角落未对准该缺口240,340。或者,该环体呈矩形,且该多个缺口240分别位于该环体的不同环边24a,24b上,较佳者,该环体的单一环边24a上的缺口240的尺寸为该环边24a的尺寸的1/10。In one embodiment, the bonding layers 24, 34 are rings having a plurality of notches 240, 340, and the positions of the plurality of notches 240, 340 are aligned or not aligned with each other. For example, the electronic component 21 has a rectangular profile, the corners of which are not aligned with the notches 240,340. Alternatively, the ring body is rectangular, and the plurality of notches 240 are respectively located on different ring sides 24a and 24b of the ring body. Preferably, the size of the notches 240 on a single ring side 24a of the ring body is the size of the ring side 1/10 the size of 24a.

于一实施例中,该结合层34包含相分离的第一区段341与第二区段342,以于该第一区段341端处与该第二区段342端处之间形成多个缺口340,且该第一区段341的形状与该第二区段342的形状不相同。例如,该承载件20用以接触结合该第一区段341的面积与该承载件20用以接触结合该第二区段342的面积相同。In one embodiment, the bonding layer 34 includes a first segment 341 and a second segment 342 that are separated from each other to form a plurality of segments between the end of the first segment 341 and the end of the second segment 342 . The notch 340 is formed, and the shape of the first section 341 is different from the shape of the second section 342 . For example, the area of the carrier 20 for contacting and combining with the first section 341 is the same as the area of the carrier 20 for contacting and combining with the second section 342 .

综上所述,本发明的电子封装件及其制法,经由该电子元件于设置于该承载件后的轮廓未对应该置晶区的边界,以平衡该电子封装件的整体应力分布,故该电子封装件能维持该散热件与该承载件之间的距离,以避免该散热件与该电子元件之间发生脱层,进而能提升该电子封装件的信赖性。To sum up, in the electronic package and the manufacturing method thereof of the present invention, the outline of the electronic device after being disposed on the carrier does not correspond to the boundary of the placement die, so as to balance the overall stress distribution of the electronic package, so The electronic package can maintain the distance between the heat sink and the carrier, so as to avoid delamination between the heat sink and the electronic element, thereby improving the reliability of the electronic package.

此外,因该缺口的位置不会朝向该电子元件的角落,故能提升该散热件的覆盖率及平面度,因而能有效降低该电子封装件的翘曲程度。In addition, since the position of the notch does not face the corner of the electronic component, the coverage and flatness of the heat sink can be improved, thereby effectively reducing the degree of warpage of the electronic package.

另外,经由该结合层的单一环边上的缺口的尺寸为该环边的尺寸的1/10的设计,以利于平衡该承载件上的应力分布,因而能有效降低该电子封装件的翘曲程度。In addition, the size of the notch on the single ring edge through the bonding layer is designed to be 1/10 of the size of the ring edge, so as to balance the stress distribution on the carrier, thereby effectively reducing the warpage of the electronic package. degree.

上述实施例用以例示性说明本发明的原理及其功效,而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。The above embodiments are used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can make modifications to the above embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be as listed in the claims.

Claims (20)

1.一种电子封装件,其特征在于,包括:1. An electronic package, characterized in that, comprising: 承载件,其定义有置晶区;a carrier, which defines a crystal placement area; 电子元件,其设于该承载件的置晶区内并电性连接该承载件,其中,该电子元件设置于该承载件上的轮廓未对应该置晶区的边界;an electronic component, which is arranged in the die placement area of the carrier and is electrically connected to the carrier, wherein the outline of the electronic component arranged on the carrier does not correspond to the boundary of the die placement area; 结合层,其设该承载件上且位于该置晶区外,以环绕该电子元件;以及a bonding layer disposed on the carrier and outside the die placement area to surround the electronic component; and 散热件,其结合该结合层以设于该承载件上并遮盖该电子元件。The heat sink is combined with the bonding layer to be disposed on the carrier and cover the electronic element. 2.如权利要求1所述的电子封装件,其特征在于,该置晶区为矩形,且该电子元件呈四边形轮廓,以令该电子元件的角落位于该置晶区的边线上。2 . The electronic package of claim 1 , wherein the die placement area is rectangular, and the electronic component has a quadrangular outline, so that corners of the electronic component are located on the edge of the die placement area. 3 . 3.如权利要求2所述的电子封装件,其特征在于,该电子元件的角落对准该结合层。3 . The electronic package of claim 2 , wherein corners of the electronic component are aligned with the bonding layer. 4 . 4.如权利要求1所述的电子封装件,其特征在于,该结合层为具有多个缺口的环体。4 . The electronic package of claim 1 , wherein the bonding layer is a ring body with a plurality of notches. 5 . 5.如权利要求4所述的电子封装件,其特征在于,该多个缺口的位置相互对齐或未对齐。5 . The electronic package of claim 4 , wherein the positions of the plurality of notches are aligned or not aligned with each other. 6 . 6.如权利要求4所述的电子封装件,其特征在于,该电子元件呈矩形轮廓,其角落未对准该缺口。6 . The electronic package of claim 4 , wherein the electronic component has a rectangular outline, and the corners thereof are not aligned with the notch. 7 . 7.如权利要求4所述的电子封装件,其特征在于,该环体呈矩形,且该多个缺口分别位于该环体的不同环边上。7 . The electronic package of claim 4 , wherein the ring body is rectangular, and the plurality of notches are respectively located on different ring edges of the ring body. 8 . 8.如权利要求7所述的电子封装件,其特征在于,该环体的单一环边上的缺口的尺寸为该环边的尺寸的1/10。8 . The electronic package of claim 7 , wherein the size of the notch on the single ring edge of the ring body is 1/10 of the size of the ring edge. 9 . 9.如权利要求1所述的电子封装件,其特征在于,该结合层包含相分离的第一区段与第二区段,以于该第一区段与该第二区段之间形成多个缺口,且该第一区段的形状与该第二区段的形状不相同。9 . The electronic package of claim 1 , wherein the bonding layer comprises a first segment and a second segment separated from each other so as to be formed between the first segment and the second segment. 10 . A plurality of notches, and the shape of the first section is different from the shape of the second section. 10.如权利要求9所述的电子封装件,其特征在于,该承载件用以接触结合该第一区段的面积与该承载件用以接触结合该第二区段的面积相同。10 . The electronic package of claim 9 , wherein an area of the carrier for contacting and bonding with the first section is the same as an area of the carrier for contacting and bonding with the second section. 11 . 11.一种电子封装件的制法,其特征在于,包括:11. A method for making an electronic package, comprising: 提供一定义有置晶区的承载件;providing a carrier defining a die placement region; 将电子元件设于该承载件的置晶区内并电性连接该承载件,且将结合层设于该承载件的置晶区外并环绕该电子元件,其中,该电子元件设置于该承载件上的轮廓并未对应该置晶区的边界;以及The electronic component is arranged in the die placement area of the carrier and electrically connected to the carrier, and the bonding layer is arranged outside the die placement area of the carrier and surrounds the electronic component, wherein the electronic component is arranged in the carrier The contours on the part do not correspond to the boundaries of the placement region; and 将散热件结合该结合层,使该散热件设于该承载件上并遮盖该电子元件。The heat sink is combined with the bonding layer, so that the heat sink is arranged on the carrier and covers the electronic component. 12.如权利要求11所述的电子封装件的制法,其特征在于,该置晶区为矩形,且该电子元件呈四边形轮廓,以令该电子元件的角落位于该置晶区的边线上。12 . The method of claim 11 , wherein the die placement area is rectangular, and the electronic component has a quadrangular outline, so that corners of the electronic component are located on the edge of the die placement area. 13 . . 13.如权利要求12所述的电子封装件的制法,其特征在于,该电子元件的角落对准该结合层。13 . The method of claim 12 , wherein a corner of the electronic component is aligned with the bonding layer. 14 . 14.如权利要求11所述的电子封装件的制法,其特征在于,该结合层为具有多个缺口的环体。14 . The method of claim 11 , wherein the bonding layer is a ring body with a plurality of notches. 15 . 15.如权利要求14所述的电子封装件的制法,其特征在于,该多个缺口的位置相互对齐或未对齐。15 . The method of claim 14 , wherein the positions of the plurality of notches are aligned or not aligned with each other. 16 . 16.如权利要求14所述的电子封装件的制法,其特征在于,该电子元件呈矩形轮廓,其角落未对准该缺口。16 . The method of claim 14 , wherein the electronic component has a rectangular outline, and the corners thereof are not aligned with the notch. 17 . 17.如权利要求14所述的电子封装件的制法,其特征在于,该环体呈矩形,且该多个缺口分别位于该环体的不同环边上。17 . The method of claim 14 , wherein the ring body is rectangular, and the plurality of notches are respectively located on different ring edges of the ring body. 18 . 18.如权利要求17所述的电子封装件的制法,其特征在于,该环体的单一环边上的缺口的尺寸为该环边的尺寸的1/10。18 . The method of claim 17 , wherein the size of the notch on the single ring edge of the ring body is 1/10 of the size of the ring edge. 19 . 19.如权利要求11所述的电子封装件的制法,其特征在于,该结合层包含相分离的第一区段与第二区段,以于该第一区段与该第二区段之间形成多个缺口,且该第一区段的形状与该第二区段的形状不相同。19. The method of claim 11, wherein the bonding layer comprises a first segment and a second segment separated from each other, so that the first segment and the second segment A plurality of gaps are formed therebetween, and the shape of the first section is different from the shape of the second section. 20.如权利要求19所述的电子封装件的制法,其特征在于,该承载件用以接触结合该第一区段的面积与该承载件用以接触结合该第二区段的面积相同。20. The method of claim 19, wherein an area of the carrier for contacting and bonding with the first section is the same as an area of the carrier for contacting and bonding with the second section .
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