CN114649278A - Electronic package and manufacturing method thereof - Google Patents
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- CN114649278A CN114649278A CN202011605525.XA CN202011605525A CN114649278A CN 114649278 A CN114649278 A CN 114649278A CN 202011605525 A CN202011605525 A CN 202011605525A CN 114649278 A CN114649278 A CN 114649278A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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Abstract
本发明涉及一种电子封装件及其制法,包括将电子元件设于承载件的置晶区内并电性连接该承载件,且将结合层设于该承载件的置晶区外以环绕该电子元件,再将散热件结合结合层以设于该承载件上并遮盖该电子元件,以经由该电子元件相对该置晶区偏转设于该承载件上,使该电子元件的轮廓未对应该置晶区的边界,以平衡该电子封装件的应力分布,避免该散热件与该电子元件之间发生脱层。
The invention relates to an electronic package and a method for making the same, comprising arranging electronic components in a die placement area of a carrier and electrically connecting the carrier, and arranging a bonding layer outside the die placement area of the carrier to surround the carrier For the electronic component, the heat sink is combined with the bonding layer to be disposed on the carrier and cover the electronic component, so that the electronic component can be deflected relative to the die placement area on the carrier, so that the outline of the electronic component is not aligned. The boundary of the die area should be placed to balance the stress distribution of the electronic package and avoid delamination between the heat sink and the electronic component.
Description
技术领域technical field
本发明有关一种半导体装置,尤指一种具散热件的电子封装件及其制法。The present invention relates to a semiconductor device, in particular to an electronic package with a heat sink and a manufacturing method thereof.
背景技术Background technique
随着电子产品在功能及处理速度的需求的提升,作为电子产品的核心组件的半导体芯片需具有更高密度的电子元件(Electronic Components)及电子电路(ElectronicCircuits)。为了迅速将热能散逸至大气中,通常在半导体封装结构中配置散热片(HeatSink或Heat Spreader),该散热片通常经由散热胶结合至芯片背面,以借散热胶与散热片逸散出半导体芯片所产生的热量。With the improvement of the function and processing speed of electronic products, the semiconductor chip, which is the core component of the electronic product, needs to have higher-density electronic components and electronic circuits. In order to quickly dissipate the heat energy to the atmosphere, a heat sink (HeatSink or Heat Spreader) is usually arranged in the semiconductor package structure. heat generated.
如图1A所示,现有散热型的半导体封装件1的制法先将一半导体芯片11以其作用面11a利用覆晶接合方式(即通过导电凸块110与底胶111)设于一封装基板10的置晶区A(如图1A’所示)上,再将一散热件13以其顶片130经由导热层12结合于该半导体芯片11的非作用面11b上,且该散热件13的支撑脚131经由粘着层14架设于该封装基板10上。接着,进行封装压模作业,以供封装胶体(图略)包覆该半导体芯片11及散热件13,并使该散热件13的顶片130外露出封装胶体而直接与大气接触。As shown in FIG. 1A , in a conventional method for manufacturing a heat dissipation type semiconductor package 1 , a
于运行时,该半导体芯片11所产生的热能经由该非作用面11b、导热层12而传导至该散热件13以散热至该半导体封装件1的外部。During operation, the heat energy generated by the
然而,现有半导体封装件1中,该半导体芯片11于设置后的轮廓对应该置晶区A的边界(如图1A’所示),使该散热件13及该半导体芯片11两者因与该导热层12具有极大的热膨胀系数差异(CTE Mismatch)而所产生的应力无法分散,导致该半导体封装件1发生变形的情况(即翘曲),如图1B所示,致使该散热件13的顶片130与变形的导热层12’(或与该半导体芯片11)之间容易发生脱层(如图1B所示的间隙t),不仅造成导热效果下降,且会降低该半导体封装件1的信赖性。However, in the conventional semiconductor package 1 , the contour of the
因此,如何克服上述现有技术的种种问题,实已成为目前业界亟待克服的难题。Therefore, how to overcome the above-mentioned various problems of the prior art has actually become a difficult problem to be overcome in the current industry.
发明内容SUMMARY OF THE INVENTION
鉴于上述现有技术的种种缺陷,本发明提供一种电子封装件及其制法,避免散热件与电子元件之间发生脱层。In view of the above-mentioned defects of the prior art, the present invention provides an electronic package and a manufacturing method thereof to avoid delamination between the heat sink and the electronic component.
本发明的电子封装件,包括:承载件,其定义有置晶区;电子元件,其设于该承载件的置晶区内并电性连接该承载件,其中,该电子元件设置于该承载件上的轮廓并未对应该置晶区之边界;结合层,其设该承载件上且位于该置晶区外,以环绕该电子元件;以及散热件,其结合该结合层以设于该承载件上并遮盖该电子元件。The electronic package of the present invention includes: a carrier, which defines a die placement area; an electronic component, which is arranged in the die placement area of the carrier and is electrically connected to the carrier, wherein the electronic component is arranged on the carrier The contour on the component does not correspond to the boundary of the die placement area; the bonding layer is provided on the carrier and located outside the die placement area to surround the electronic component; and the heat sink is combined with the bonding layer to be provided on the on the carrier and cover the electronic component.
本发明还提供一种电子封装件的制法,包括:提供一定义有置晶区的承载件;将电子元件设于该承载件的置晶区内并电性连接该承载件,且将结合层设于该承载件的置晶区外并环绕该电子元件,其中,该电子元件设置于该承载件上的轮廓并未对应该置晶区的边界;以及将散热件结合该结合层,使该散热件设于该承载件上并遮盖该电子元件。The present invention also provides a method for manufacturing an electronic package, comprising: providing a carrier defining a die placement area; arranging an electronic component in the die placement area of the carrier and electrically connecting the carrier, and combining the The layer is arranged outside the chip placement area of the carrier and surrounds the electronic component, wherein the outline of the electronic component disposed on the carrier does not correspond to the boundary of the die placement area; and the heat sink is combined with the bonding layer to make The heat sink is arranged on the carrier and covers the electronic component.
前述的电子封装件及其制法中,该置晶区为矩形,且该电子元件呈四边形轮廓,以令该电子元件的角落位于该置晶区的边线上。例如,该电子元件的角落对准该结合层。In the aforementioned electronic package and its manufacturing method, the die placement area is rectangular, and the electronic component has a quadrangular outline, so that the corners of the electronic component are located on the edge of the die placement area. For example, the corners of the electronic component are aligned with the bonding layer.
前述的电子封装件及其制法中,该结合层为具有多个缺口的环体,其中,该多个缺口的位置相互对齐或未对齐。例如,该电子元件呈矩形轮廓,其角落未对准该缺口。或者,该环体呈矩形,且该多个缺口分别位于该环体的不同环边上,较佳者,该环体的单一环边上的缺口的尺寸为该环边的尺寸的1/10。In the aforementioned electronic package and its manufacturing method, the bonding layer is a ring body with a plurality of notches, wherein the positions of the plurality of notches are aligned or not aligned with each other. For example, the electronic component has a rectangular profile with corners that are not aligned with the notch. Alternatively, the ring body is rectangular, and the plurality of notches are respectively located on different ring sides of the ring body. Preferably, the size of the notches on a single ring side of the ring body is 1/10 of the size of the ring side .
前述的电子封装件及其制法中,该结合层包含相分离的第一区段与第二区段,以于该第一区段与该第二区段之间形成多个缺口,且该第一区段的形状与该第二区段的形状不相同。例如,该承载件用以接触结合该第一区段的面积与该承载件用以接触结合该第二区段的面积相同。In the aforementioned electronic package and its manufacturing method, the bonding layer includes a first segment and a second segment separated from each other, so as to form a plurality of gaps between the first segment and the second segment, and the The shape of the first section is not the same as the shape of the second section. For example, the area of the carrier for contacting and combining with the first section is the same as the area of the carrier for contacting and combining with the second section.
由上可知,本发明的电子封装件及其制法中,主要经由该电子元件于设置于该承载件上后的轮廓未对应该置晶区的边界,使该承载件能有效平衡其上应力分布,故相比于现有技术,该电子封装件能维持该散热件与该承载件之间的距离,以避免该散热件与该电子元件之间发生脱层,进而能提升该电子封装件的信赖性。As can be seen from the above, in the electronic package and the manufacturing method thereof of the present invention, the outline of the electronic component disposed on the carrier does not correspond to the boundary of the die placement area, so that the carrier can effectively balance the stress on the carrier Therefore, compared with the prior art, the electronic package can maintain the distance between the heat sink and the carrier, so as to avoid delamination between the heat sink and the electronic element, thereby improving the electronic package. 's reliability.
此外,,本发明经由该缺口的位置不会朝向该电子元件的角落的设计,以利于提升该散热件的覆盖率及平面度,因而能有效降低该电子封装件的翘曲程度。In addition, the present invention can improve the coverage and flatness of the heat sink through the design that the position of the notch does not face the corner of the electronic component, thereby effectively reducing the degree of warpage of the electronic package.
另外,本发明经由该结合层的单一环边上的缺口的尺寸为该环边的尺寸的1/10的设计,以利于该承载件平衡其上的应力分布,因而能有效降低该电子封装件的翘曲程度。In addition, in the present invention, the size of the notch on the single ring edge of the bonding layer is 1/10 of the size of the ring edge, so as to help the carrier to balance the stress distribution thereon, thereby effectively reducing the electronic package. degree of warpage.
另外,本发明经由该电子元件于设置于该承载件上后的轮廓未对应该置晶区的边界,以利于该承载件的线路布设能有效搭配特殊设计的电子元件,因而能增强该电子元件的运算能力。In addition, in the present invention, the outline of the electronic component disposed on the carrier does not correspond to the boundary of the die area, so that the circuit layout of the carrier can be effectively matched with the specially designed electronic component, thereby enhancing the electronic component. computing power.
附图说明Description of drawings
图1A为现有半导体封装件的剖视示意图。FIG. 1A is a schematic cross-sectional view of a conventional semiconductor package.
图1A’为图1A的上视平面示意图。Fig. 1A' is a schematic top plan view of Fig. 1A.
图1B为现有半导体封装件的不良状态的剖视示意图。FIG. 1B is a schematic cross-sectional view of a defective state of a conventional semiconductor package.
图2A至图2B为本发明的电子封装件的制法的剖视示意图。2A to 2B are schematic cross-sectional views of the manufacturing method of the electronic package of the present invention.
图3A为图2A的上视平面示意图。FIG. 3A is a schematic top plan view of FIG. 2A .
图3B及图3C为图3A的不同态样的上视平面示意图。3B and 3C are schematic top plan views of different aspects of FIG. 3A .
附图标记说明Description of reference numerals
1:半导体封装件1: Semiconductor package
10:封装基板10: Package substrate
11:半导体芯片11: Semiconductor chip
11a,21a:作用面11a, 21a: Action surface
11b,21b:非作用面11b, 21b: Non-active surfaces
110,210:导电凸块110,210: Conductive bumps
111,211:底胶111,211: Primer
12,12’,22:导热层12, 12', 22: Thermally conductive layer
13,23:散热件13,23: Heat sink
130:顶片130: Top sheet
131,231:支撑脚131, 231: Support feet
14:粘着层14: Adhesive layer
2:电子封装件2: Electronic packages
20:承载件20: Carrier
21:电子元件21: Electronic Components
230:散热体230: heat sink
24,34:结合层24,34: Bonding Layer
24a,24b,24c,24d:环边24a, 24b, 24c, 24d: Ring edge
240,340:缺口240,340: Notch
341:第一区段341: First Section
342:第二区段342: Second Section
A:置晶区A: Crystal placement area
D,R:面积D, R: area
L:边线L: sideline
t:间隙t: gap
X1,X2:对角线X1, X2: Diagonal
Y:轴线。Y: axis.
具体实施方式Detailed ways
以下经由特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。The embodiments of the present invention are described below through specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.
须知,本说明书附图所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供本领域技术人员的了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“第一”、“第二”、“一”等的用语,亦仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当亦视为本发明可实施的范畴。It should be noted that the structures, proportions, sizes, etc. shown in the drawings of this specification are only used to cooperate with the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the conditions for the implementation of the present invention. , therefore does not have technical substantive significance, any structural modification, proportional relationship change or size adjustment, without affecting the effect that the present invention can produce and the purpose that can be achieved, should still fall within the scope of the present invention. The technical content must be able to cover the scope. At the same time, the terms such as "above", "first", "second", "one", etc. quoted in this specification are only for the convenience of description and clarity, and are not used to limit the scope of the present invention. Changes or adjustments of their relative relationships, without substantial changes to the technical content, should also be regarded as the scope of the present invention.
图2A至图2B为本发明的电子封装件2的制法的剖面示意图。2A to 2B are schematic cross-sectional views of the manufacturing method of the electronic package 2 of the present invention.
如图2A所示,于一承载件20上设置至少一电子元件21及形成结合层24,以令该电子元件21电性连接该承载件20,其中,该承载件20定义有至少一用以设置该电子元件21的置晶区A(如图3A所示),且令该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界。As shown in FIG. 2A , at least one
于本实施例中,该承载件20例如为具有核心层与线路结构的封装基板(substrate)或无核心层(coreless)的线路结构,其于介电材上形成线路层,如扇出(fanout)型重布线路层(redistribution layer,简称RDL)。例如,该承载件20的置晶区A定义为矩形,如图3A所示的正方形。应可理解地,该承载件20亦可为其它可供承载如芯片等电子元件的承载结构,例如导线架(lead frame)或硅中介板(silicon interposer),并不限于上述。In this embodiment, the
此外,该电子元件21为主动元件、被动元件或其二者组合等,其呈如矩形的四边形片体(如图3A所示的正方形片体),以令该电子元件21相对该置晶区A偏转配置,如转90度角,使该电子元件21的角落位于该置晶区A的边线L上而未对应配合坐落于该置晶区A的角落处,其中,该主动元件例如为半导体芯片,且该被动元件例如为电阻、电容及电感。例如,该电子元件21具有相对的作用面21a及非作用面21b,且该作用面21a设有多个导电凸块210,使该电子元件21借该些导电凸块210以覆晶方式结合并电性连接该承载件20,并可以底胶211包覆该些导电凸块210。然而,有关该电子元件21连接该承载件20的方式繁多,如打线封装方式,并不限于上述。In addition, the
另外,该电子元件21的非作用面21b上可形成如导热介面材(Thermal InterfaceMaterial,简称TIM)或一般导热胶的导热层22。In addition, a thermal
另外,该结合层24为如胶材的粘着层,其位于于该承载件20的边缘,以环绕该电子元件21的外围,使该结合层24呈现具有多个缺口240的矩形环体,且该多个缺口240形成于四个环边24a,24b,24c,24d的其中两者上,如图3A及图3B所示。例如,该些缺口240形成于相对的两环边24a,24b上,且该些缺口240的位置可相互对齐(如图3A所示的同一轴线Y)或未对齐(如图3B所示),以令该电子元件21的角落对准该结合层24,而不会对准该些缺口240,即该电子元件21的对角线X1,X2不会延伸通过该些缺口240。较佳地,于该结合层24的具有该些缺口240的两环边24a,24b的其中一者中,如图3B所示,该承载件20对应外露于该缺口240的面积(长度)R为该承载件20用以接触结合该环边24a的面积(长度)D的1/10。In addition, the
如图2B所示,将一散热件23结合该结合层24,以设于该承载件20上,且该散热件23经由导热层22设于该电子元件21上以遮盖该电子元件21。As shown in FIG. 2B , a
于本实施例中,该散热件23具有一散热体230与多个设于该散热体230下侧的支撑脚231,该散热体230为散热片并以下侧接触该导热层22,且该支撑脚231以其端部结合该结合层24上。例如,该散热件23以压合方式设于该承载件20上,且该压合温度(即该承载件20的耐热温度)至少为120℃,最佳为125℃。In this embodiment, the
此外,,该散热体230与该支撑脚231为一体成形;于其它实施例中,该散热体230与该支撑脚231可为分开制作,而非一体成形。应可理解地,有关该散热件的种类繁多,并不限于上述。In addition, the
另外,该结合层24的布设面积可依需求设计。例如,该结合层34可包含相分离的第一区段341与第二区段342,如图3C所示,以于该第一区段341端处与该第二区段342端处之间形成多个缺口340,且该第一区段341的形状与该第二区段342的形状不相同。较佳者,该承载件20用以接触结合该第一区段341的面积与该承载件20用以接触结合该第二区段342的面积相同。In addition, the layout area of the
本发明的制法主要经由该电子元件21相对该置晶区A偏转配置,以令该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界,使该承载件20能有效平衡其上应力分布,故相比于现有技术,该电子封装件2能维持该散热体230(或该散热件23)与该承载件20之间的距离,以避免该散热体230(或该散热件23)与该导热层22(或该电子元件21)之间发生脱层(delamination),进而能提升该电子封装件2的信赖性。应可理解地,亦可改变该电子元件21的外观轮廓,使其于设置于该承载件20上后的轮廓未对应该置晶区A的边界,如菱形的四边形芯片本体。In the manufacturing method of the present invention, the
此外,,经由该缺口240,340的位置不会朝向该电子元件21的角落的设计,以利于提升该散热体230(或该散热件23)的覆盖率及平面度,因而能有效降低该电子封装件2的翘曲程度。In addition, through the design that the positions of the
另外,经由该结合层24的单一环边24a上的缺口240的尺寸(如面积R或长度)为该环边24a的尺寸(如面积D或长度)的1/10的设计,以利于该承载件20平衡其上的应力分布,因而能有效降低该电子封装件2的翘曲程度。In addition, the size (such as area R or length) of the
另外,经由该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界的设计,以利于该承载件20的线路布设有效搭配特殊设计的电子元件21,因而能增强该电子元件21的运算能力。In addition, the contour of the
本发明还提供一种电子封装件2,包括:一承载件20、至少一电子元件21、一结合层24,34以及一散热件23。The present invention also provides an electronic package 2 , comprising: a
所述的承载件20具有至少一置晶区A。The
所述的电子元件21设于该承载件20上且位于该置晶区A内并电性连接该承载件20,其中,该电子元件21于设置于该承载件20上后的轮廓未对应该置晶区A的边界。The
所述的结合层24,34形成该承载件20上且位于该置晶区A外,以环绕该电子元件21。The bonding layers 24 and 34 are formed on the
所述的散热件23结合该结合层24,34以设于该承载件20上并遮盖该电子元件21。The
于一实施例中,该置晶区A为矩形,且该电子元件21呈四边形轮廓,以令该电子元件21的角落位于该置晶区A的边线L上。例如,该电子元件21的角落对准该结合层24,34。In one embodiment, the die placement area A is rectangular, and the
于一实施例中,该结合层24,34为具有多个缺口240,340的环体,且该多个缺口240,340的位置相互对齐或未对齐。例如,该电子元件21呈矩形轮廓,其角落未对准该缺口240,340。或者,该环体呈矩形,且该多个缺口240分别位于该环体的不同环边24a,24b上,较佳者,该环体的单一环边24a上的缺口240的尺寸为该环边24a的尺寸的1/10。In one embodiment, the bonding layers 24, 34 are rings having a plurality of
于一实施例中,该结合层34包含相分离的第一区段341与第二区段342,以于该第一区段341端处与该第二区段342端处之间形成多个缺口340,且该第一区段341的形状与该第二区段342的形状不相同。例如,该承载件20用以接触结合该第一区段341的面积与该承载件20用以接触结合该第二区段342的面积相同。In one embodiment, the
综上所述,本发明的电子封装件及其制法,经由该电子元件于设置于该承载件后的轮廓未对应该置晶区的边界,以平衡该电子封装件的整体应力分布,故该电子封装件能维持该散热件与该承载件之间的距离,以避免该散热件与该电子元件之间发生脱层,进而能提升该电子封装件的信赖性。To sum up, in the electronic package and the manufacturing method thereof of the present invention, the outline of the electronic device after being disposed on the carrier does not correspond to the boundary of the placement die, so as to balance the overall stress distribution of the electronic package, so The electronic package can maintain the distance between the heat sink and the carrier, so as to avoid delamination between the heat sink and the electronic element, thereby improving the reliability of the electronic package.
此外,因该缺口的位置不会朝向该电子元件的角落,故能提升该散热件的覆盖率及平面度,因而能有效降低该电子封装件的翘曲程度。In addition, since the position of the notch does not face the corner of the electronic component, the coverage and flatness of the heat sink can be improved, thereby effectively reducing the degree of warpage of the electronic package.
另外,经由该结合层的单一环边上的缺口的尺寸为该环边的尺寸的1/10的设计,以利于平衡该承载件上的应力分布,因而能有效降低该电子封装件的翘曲程度。In addition, the size of the notch on the single ring edge through the bonding layer is designed to be 1/10 of the size of the ring edge, so as to balance the stress distribution on the carrier, thereby effectively reducing the warpage of the electronic package. degree.
上述实施例用以例示性说明本发明的原理及其功效,而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。The above embodiments are used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can make modifications to the above embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be as listed in the claims.
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804771A (en) * | 1996-09-26 | 1998-09-08 | Intel Corporation | Organic substrate (PCB) slip plane "stress deflector" for flip chip deivces |
US20040212970A1 (en) * | 2003-04-22 | 2004-10-28 | Kai-Chi Chen | [chip package structure] |
TW200743148A (en) * | 2006-05-10 | 2007-11-16 | Siliconware Precision Industries Co Ltd | Semiconductor device, chip structure thereof and method for manufacturing the same |
US20140061893A1 (en) * | 2012-08-29 | 2014-03-06 | Broadcom Corporation | Hybrid thermal interface material for ic packages with integrated heat spreader |
TWI584428B (en) * | 2016-06-08 | 2017-05-21 | 力成科技股份有限公司 | Heat-dissipating semiconductor package for lessening package warpage |
CN107591378A (en) * | 2016-07-06 | 2018-01-16 | 矽品精密工业股份有限公司 | Heat dissipation type packaging structure |
JP2018170411A (en) * | 2017-03-30 | 2018-11-01 | 日本電気株式会社 | Junction structure and mounting structure body of semiconductor device and junction method of semiconductor device |
CN111834303A (en) * | 2019-04-18 | 2020-10-27 | 矽品精密工业股份有限公司 | Electronic package and its manufacturing method and carrying structure |
CN111952256A (en) * | 2019-05-15 | 2020-11-17 | 联发科技股份有限公司 | Electronic packaging |
US10863626B1 (en) * | 2019-09-02 | 2020-12-08 | Siliconware Precision Industries Co., Ltd. | Electronic package carrier structure thereof, and method for fabricating the carrier structure |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018063213A1 (en) * | 2016-09-29 | 2018-04-05 | Intel Corporation | Methods of forming flexure based cooling solutions for package structures |
-
2020
- 2020-12-21 TW TW109145277A patent/TWI735398B/en active
- 2020-12-30 CN CN202011605525.XA patent/CN114649278A/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804771A (en) * | 1996-09-26 | 1998-09-08 | Intel Corporation | Organic substrate (PCB) slip plane "stress deflector" for flip chip deivces |
US20040212970A1 (en) * | 2003-04-22 | 2004-10-28 | Kai-Chi Chen | [chip package structure] |
TW200743148A (en) * | 2006-05-10 | 2007-11-16 | Siliconware Precision Industries Co Ltd | Semiconductor device, chip structure thereof and method for manufacturing the same |
US20140061893A1 (en) * | 2012-08-29 | 2014-03-06 | Broadcom Corporation | Hybrid thermal interface material for ic packages with integrated heat spreader |
TWI584428B (en) * | 2016-06-08 | 2017-05-21 | 力成科技股份有限公司 | Heat-dissipating semiconductor package for lessening package warpage |
CN107591378A (en) * | 2016-07-06 | 2018-01-16 | 矽品精密工业股份有限公司 | Heat dissipation type packaging structure |
JP2018170411A (en) * | 2017-03-30 | 2018-11-01 | 日本電気株式会社 | Junction structure and mounting structure body of semiconductor device and junction method of semiconductor device |
CN111834303A (en) * | 2019-04-18 | 2020-10-27 | 矽品精密工业股份有限公司 | Electronic package and its manufacturing method and carrying structure |
CN111952256A (en) * | 2019-05-15 | 2020-11-17 | 联发科技股份有限公司 | Electronic packaging |
US10863626B1 (en) * | 2019-09-02 | 2020-12-08 | Siliconware Precision Industries Co., Ltd. | Electronic package carrier structure thereof, and method for fabricating the carrier structure |
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