CN114649180B - Method for treating component of plasma treatment device, component and treatment device - Google Patents

Abstract

The invention discloses a processing method for improving etching rate and a plasma processing device, wherein the processing method comprises the steps of placing parts in a vacuum reaction cavity; placing a silicon wafer subjected to thermal oxidation treatment in the vacuum reaction cavity, generating a high-density silicon film, namely introducing organic etching gas into the vacuum reaction cavity, applying a radio frequency signal to the vacuum reaction cavity, and exciting the organic etching gas into plasma by the radio frequency signal, wherein the plasma bombards the silicon wafer to generate the high-density silicon film which is covered on the surface of the part. The invention adopts very low-cost treatment gas and a coating process, realizes uniform coating of parts possibly contacting plasma in etching cavities such as a gas spray head and the like, isolates the Y2O3 coating or Al2O3/SiC coating of the parts from directly contacting the plasma, thereby reducing the pollution of microparticles to the greatest extent, stabilizing the reaction rate of organic etching reaction, improving the production uniformity and reducing the production cost.

Description

Method for treating component of plasma treatment device, component and treatment device

Technical Field

The present invention relates to the field of plasma etching technology, and in particular, to a processing method and a plasma processing apparatus for improving the etching rate of plasma.

Background

Contamination of the microparticles in the etch chamber is an important issue in chip production. Serious cavity contamination can cause shorting, block etch (block etch) of the integrated circuit, etc. Therefore, as feature sizes continue to shrink, the number and size of microparticles (PA) in the etch chamber is also becoming more and more critical. For example, in the age of 0.11-0.13 μm, the etching cavity detects microparticles with a particle size of more than 0.16 μm, so that the safety of the etched chip can be ensured. But when reaching the 10nm technology node, the number of microparticles smaller than 0.045 μm must be monitored.

There are mainly two sources of microparticles, on the one hand, carbon-containing byproducts generated during etching. For etching of the organic mask layer material, the main gas is NH ₃,N₂/H₂ or the like. During etching, a portion of the carbon nitrogen polymer may be deposited on the chamber walls, including the upper electrode and the regions around the periphery of the wafer. On the other hand, due to the high activity free radicals and high energy ions in the plasma, the modification of the cavity material, especially the upper electrode gas Shower (SH) is caused. This modification causes corrosion of the material of the upper electrode Y ₂O₃, which forms the source of PA. Meanwhile, the remanufacturing also reduces the service life of the gas spray header, and increases COC (cost of consumable, consumable cost).

In order to reduce particle pollution, the surface of the device in the reaction cavity can be coated, and the coating isolates the direct contact between the plasma and the protective layer, but the surface morphology of the device has unstable influence on the etching rate due to the adsorption of particles of the reaction gas.

Disclosure of Invention

In order to solve the technical problems, the invention provides a method for improving the etching rate of plasma

A method of processing, the method comprising the steps of:

placing the parts in a vacuum reaction cavity;

placing the silicon wafer subjected to the thermal oxidation treatment in the vacuum reaction cavity;

introducing organic etching gas into the vacuum reaction cavity;

and applying a radio frequency signal to the vacuum reaction cavity, wherein the radio frequency signal excites the organic etching gas into plasma, and particles generated by bombardment of the silicon wafer by the plasma form a silicon film on the surface of the part.

Optionally, the thermal oxidation treatment includes the steps of:

And placing the silicon wafer in a furnace tube with the temperature of more than 800 ℃, and introducing H ₂ and O ₂, wherein the flow ratio of H ₂ to O ₂ is 1:4-4:1.

Optionally, the flow ratio of H ₂ to O ₂ is 10:7-13:10.

Optionally, the organic etching gas includes H ₂、SiH₄ and an oxygen-containing gas.

Optionally, the oxygen-containing gas includes one or more of O ₂, CO, and CO ₂.

Optionally, the temperature of the plasma is less than 130 ℃.

Optionally, the process conditions of the plasma are that the pressure is less than 150mT, the radio frequency power is more than 200W, and the radio frequency range is 2-60MHz.

Optionally, the radio frequency signal adopts a continuous mode or a pulse mode.

Optionally, the thickness of the silicon thin film is less than 30nm.

Optionally, the component is a component in contact with plasma in the vacuum reaction chamber, and the component comprises at least one of a reaction chamber inner wall, a grounding ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring, a plasma restraint device and a liner.

Optionally, a protective layer for preventing plasma corrosion is arranged on the surface of the part.

Optionally, the protective layer is a Y ₂O₃ coating or an Al ₂O₃/SiC coating.

Optionally, a silicon coating layer is disposed on the protective layer for preventing the generation of pollutants.

Further, the invention also provides a component for plasma processing environment, comprising a component body, wherein the surface of the body is provided with a protective layer for preventing plasma corrosion, the protective layer is a Y ₂O₃ coating or an Al ₂O₃/SiC coating, and

And the silicon film is coated on the outer surface of the protective layer and is formed by adopting any one of the treatment methods.

Optionally, the component is a component in contact with plasma in the vacuum reaction chamber, and the component comprises at least one of a reaction chamber inner wall, a grounding ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring, a plasma restraint device and a liner.

Optionally, the gas shower head includes:

a gas shower head body;

A protective layer coated on the surface of the body for preventing plasma corrosion, wherein the protective layer is a Y ₂O₃ coating or an Al ₂O₃/SiC coating, and

And the silicon film is coated on the outer surface of the protective layer and is formed by adopting any one of the treatment methods.

Furthermore, the invention also provides a plasma processing device which comprises a vacuum reaction cavity and parts which are positioned in the vacuum reaction cavity and are in contact with plasma, wherein the parts have the characteristics as the parts.

The invention has the advantages that the invention provides the treatment method for improving the etching rate of the plasmas, and a layer of high-density silicon film is formed on the surfaces of parts such as the spray header and the like containing the protective layer through special process steps, thereby isolating the plasmas from direct contact with the parts in the vacuum cavity, reducing the pollution of particles to the greatest extent, prolonging the service life of the parts, avoiding the adsorption of atoms contained in the reaction gas on the surfaces of the parts such as the spray header and the like, and realizing uniform and stable etching rate. Thereby lifting up

High production efficiency and low production cost.

Drawings

In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of a prior art treatment process versus hydrogen-containing process rate;

FIG. 2 is a schematic diagram of prior art treatment process versus carbon containing process rate;

FIG. 3 is a schematic diagram of the principle of rate instability of the prior art treatment method;

FIG. 4 is a new treatment method for a component provided in example 1;

FIG. 5 is a new treatment method for a component provided in example 2;

FIG. 6 is a graph comparing contaminants from a new process versus a prior art process versus a hydrogen-containing process;

FIG. 7 is a graph comparing the rate of a new process versus a prior art process versus a hydrogen containing process;

FIG. 8 is a plot of the new treatment method versus the contamination of the carbonaceous process;

FIG. 9 is a graph comparing the rate of a new process versus a prior art process versus a carbonaceous process;

FIG. 10 is a schematic diagram of a capacitively coupled plasma etching apparatus treated by the treatment method of the present invention;

fig. 11 is a schematic structural diagram of an inductively coupled plasma etching apparatus after being treated by the treatment method of the present invention.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

In order to prevent the plasma from corroding the components in the vacuum reaction cavity to generate pollutants, one solution is to age the surfaces of the components by introducing mixed gas of ammonia (NH ₃) and argon (Ar) into the vacuum reaction cavity to form a silicon coating, but the coating can influence the stability of the etching rate due to loose structure of the surfaces, as shown in figure 1, in organic etching, for each substrate, the etching rate point is continuously recorded in the reaction time for the hydrogen (H) containing process, and as can be seen from the figure, the etching rate continuously fluctuates from high to low for a single substrate, and the change trend of the etching rate continuously decreases with the increase of the number of the etched substrates through two groups of experimental data of (1) and (2). In the case of organic etching, the phenomenon that the etching rate gradually increases from a lower value to a final region is stable as the number of etched substrates increases, as shown in fig. 2 by four sets of experimental data for the carbon (C) containing process. Regardless of the process of the above organic etching, the substrate etching uniformity is destroyed, and the process parameters fluctuate in mass production.

The specific reasons can be explained with reference to fig. 3, taking the component as a spray header as an example, for the H-containing process, because the compactness of the surface of the silicon (Si) -containing coating is low, the surface of the silicon-containing (Si) -containing coating is easy to adsorb enough H, so that a higher etching rate is generated for subsequent organic etching, and the etching rate gradually decreases and becomes stable along with the consumption of H. For the C-containing process, the low compactness of the surface of the spray header is easy to adsorb enough C, so that the subsequent organic etching is retarded, and the etching rate gradually rises and then becomes stable along with the consumption of C.

Example 1

As shown in fig. 4, the processing method for improving the plasma etching rate of the present invention comprises the following steps:

S1, performing thermal oxidation treatment on a silicon wafer to form a silicon dioxide layer with higher density on the surface of the silicon wafer, and then placing the substrate into a plasma treatment device;

S2, placing a gas shower head with a protective layer into the plasma treatment device, wherein the protective layer can be an yttrium oxide (Y ₂O₃) coating or an aluminum oxide/silicon carbide (Al ₂O₃/SiC) coating so as to improve the corrosion resistance of the gas shower head;

S3, introducing organic etching gas as reaction gas, applying a radio frequency signal to the vacuum reaction cavity, exciting the reaction gas into plasma, and bombarding silicon dioxide with higher compactness to cover the surface of the gas spray header;

and S4, performing an organic etching process by using a plasma processing device which completes the steps.

After being covered by the high-compactness silicon film, the gas spray header can avoid the adsorption of H or C, and can isolate the direct corrosion of plasma to the protective layer, namely, the formation of pollutants is reduced.

In some embodiments, the process may be performed during a warm-up process, particularly after a long shut-down of the plasma processing apparatus, and a high bias purge, the above steps may be performed, or may be repeated when an increase in contaminants or a large fluctuation in reaction rate is detected after a plurality of reactions.

In other embodiments, the thermal oxidation treatment is performed on the silicon wafer in a furnace tube process, the silicon wafer is placed in a temperature of more than 800 ℃, hydrogen (H ₂) and oxygen (O ₂) are introduced, that is, wet oxidation is performed, the flow ratio of H ₂ to O ₂ is between 1:4 and 4:1, especially the flow ratio of 10:7 and 13:10 can be selected, the H ₂ and O ₂ generate steam under the high temperature condition, the steam reacts with the surface of the silicon wafer to generate thermal silicon dioxide with higher compactness, the H ₂ gas can increase the stress between the silicon dioxide, and the stress is high along with high compactness, but the excessive stress also can cause easy breakage of the property of the film to generate stripping, so as to affect the content of pollutants. When the plasma is used for bombarding the silicon wafer, the temperature of the plasma is preferably less than 130 ℃, the thickness of the high-density silicon film formed on the surface of the spray header is controlled to be less than 30nm, and the smaller thickness can reduce the stress born by molecules on the surface of the high-density silicon film, is not easy to fall off, namely, cannot become a particle pollution source.

Example two

As shown in fig. 5, the difference between the processing method for improving the plasma etching rate of the present invention and the first embodiment is that before the series of steps of placing the thermally oxidized silicon wafer, the unoxidized general silicon wafer is placed, then the mixed gas of NH ₃ and Ar is introduced to age the protective layer on the surface of the showerhead, a radio frequency signal is applied to the vacuum reaction chamber, and the mixed gas is excited into plasma and then reacts with the silicon wafer, and the specific reaction mechanism is as follows:

NH₃+e→NH+H*

Ar+e→Ar++2e

xH*+Si→SiHx。

SiHx can be redeposited on the surfaces of parts such as a gas spray header and the like to become a Si deposition layer, the physical bombardment effect of Ar+ can accelerate the deposition speed of the Si deposition layer and accelerate passivation (passivation), a silicon coating is generated on the surface of the spray header, on the basis, a thermally oxidized silicon wafer is placed, and an organic etching gas plasma is excited to cover a layer of high-compactness silicon film on the silicon coating of the spray header. The silicon coating and the high-compactness silicon film are similar in structure, are combined together stably and are not easy to fall off, and the silicon coating and the high-compactness silicon film act together to achieve a better pollutant reduction effect, and the embodiment does not need to cover a new high-compactness silicon film after the silicon coating covered by the existing gas spray header is removed, so that the applicability is strong.

In this embodiment, the organic etching gas includes H ₂ and silane (SiH ₄), and further includes one or more of oxygen (O ₂), carbon monoxide (CO), and carbon dioxide (CO ₂).

Comparative example one

As shown in fig. 6, for the H-containing process in the organic etching reaction, fold line (1) is the monitoring of the amount of contaminants generated during etching using the showerhead of the silicon plating process, and fold lines (2) and (3) are the monitoring of the amount of contaminants generated during etching at different pressures after using the process of the present invention. It can be seen that as the number of wafers (pcs) processed increases, the silicon plating process also reduces the generation of contaminants, but still reaches 4.7 (ea) over the average of the two sets of data. After the treatment method is adopted, the number of the pollutants is measured at the pressure of 270 millitorr (mT) and recorded as a broken line (2), the average number of the pollutants is obtained and is 2.8ea, the number of the pollutants is measured at the pressure of 60mT and recorded as a broken line (3), and the average number of the pollutants is obtained and is 2.4ea, so that the treatment method can achieve better technical effect of preventing the pollutants from being generated.

As shown in fig. 7, for the H-containing process in the organic etching reaction, fold line (2) is a monitor of the etching rate of the showerhead using the silicon plating treatment method, and fold lines (1) and (3) are monitors of the etching rate at different pressures after using the treatment method of the present invention. It can be seen that although the reaction rate using the silicon plating treatment method is relatively stable, the average rate is 675.1 a/minThe treatment process of the invention is carried out at a rate above 60mT at the same pressureIn the broken line (1), the treatment method can keep a lower average etching rate at the pressure of 270 mT. In actual reaction, the etching rate is expected to be kept stable and not too fast, so the processing method of the invention can better meet the actual etching requirement in combination with the situation that the etching rate is fast and slow after the etching rate is fast as the substrate is increased by using the silicon plating processing method in FIG. 1.

Comparative example two

FIG. 8 shows a plot of the number of contaminants produced by a gas showerhead treated by the method of the present invention for a C-containing process in an organic etch reaction. In which there were three experimental data, each of which measures the amount of contaminants in increasing order of the number of substrates processed, it can be seen that the amount of contaminants can be kept within 6 after an etching reaction of up to 425 pieces. And up to hundreds of contaminants can be produced for processes using silicon plating. It can be seen that the treatment of the present invention also has better contaminant reduction than the use of a silicon coating process in a C-containing organic etch process.

As shown in fig. 9, for the C-containing process in the organic etching reaction, bar graph (1) is a monitor of the showerhead etching rate after using the silicon plating process, and bar graphs (2), (3) and (4) are monitors of the etching rate at different substrate numbers after using the process of the present invention. The bar graph (1) is the change condition of the etching rate under the condition of the maximum 10 pieces, 3 groups of record etching rates are sequentially selected according to the increase of the number of the substrates, the reaction rate can be seen to be gradually increased, and the bar graphs (2), (3) and (4) are respectively used for sequentially selecting 3 groups of record etching rates under the conditions of the maximum 10 pieces, the maximum 125 pieces and the maximum 340 pieces of substrates, so that the reaction rate always keeps a relatively stable value, and the reaction rate can be displayed from a uniformity broken line.

Example III

A Capacitively Coupled Plasma (CCP) etching apparatus is an apparatus that generates plasma in a reaction chamber by means of capacitive coupling from a radio frequency power source applied to a plate and is used for etching. As shown in fig. 10, a schematic structure of a Capacitively Coupled Plasma (CCP) etching apparatus includes a vacuum reaction chamber 100, a high frequency rf power supply, and a bias rf power supply.

The vacuum reaction chamber 100 includes a generally cylindrical reaction chamber sidewall 10 made of a metal material, a top cap 9, an upper electrode assembly, and a lower electrode assembly.

The upper electrode assembly includes:

a gas shower head 7 for introducing a reaction gas while being an upper electrode of the reaction chamber;

The mounting substrate 8 is positioned above the gas spray header 7, and the gas spray header 7 is fixedly connected with the top cover 9 of the reaction cavity through the mounting substrate 8;

an upper ground ring 6 disposed around the gas shower head 7, and forming a radio frequency loop between the radio frequency power supply-the lower electrode-the plasma-the upper electrode-the upper ground ring when the radio frequency power supply is applied to the lower electrode.

The lower electrode assembly includes:

A pedestal 1 for carrying an electrostatic chuck (ESC) 2, having a temperature control device therein for controlling the temperature of an upper substrate, and being a conductive material, and simultaneously being a lower electrode, a plasma processing region is formed between the upper electrode and the lower electrode;

An electrostatic chuck 2 for carrying a substrate w, wherein a dc electrode is disposed inside the electrostatic chuck, and dc adsorption is generated between the back surface of the substrate and the carrying surface of the electrostatic chuck 2 by the dc electrode to fix the substrate;

a focus ring 3 disposed around the substrate for adjusting the process effect of the edge region of the substrate, an isolation ring 4 disposed around the base 1 for isolating the base 1 from the lower ground ring 11;

A plasma confinement ring 5 positioned between the susceptor and the chamber sidewall 10 for confining the plasma to the reaction zone while allowing the passage of gases;

The grounding ring 11 is located below the plasma confinement ring 5 and is used for providing electric field shielding to avoid plasma leakage.

The gas spray head 7 is arranged opposite to the base 2, the gas spray head 7 is connected with a gas supply device and is used for conveying reaction gas to the vacuum reaction cavity and simultaneously used as an upper electrode of the vacuum reaction cavity, the base 2 is used for supporting a substrate to be processed and simultaneously used as a lower electrode of the vacuum reaction cavity, and a reaction area is formed between the upper electrode and the lower electrode. At least one high-frequency radio-frequency power supply is applied to one of the upper electrode or the lower electrode, and a radio-frequency electric field is generated between the upper electrode and the lower electrode and is used for dissociating the reaction gas into plasma, and the plasma acts on the substrate to be processed to realize etching processing of the substrate.

And a focusing ring 3 and an edge ring are arranged around the base, and the focusing ring and the edge ring are used for adjusting the electric field or the temperature distribution around the substrate, so that the uniformity of substrate processing is improved. The plasma confinement ring 5 is arranged around the edge ring, the exhaust channel is arranged on the plasma confinement ring 5, and the reaction area between the upper electrode and the lower electrode is confined while the reaction gas is exhausted by reasonably arranging the depth-to-width ratio of the exhaust channel, so that the plasma is prevented from leaking to the non-reaction area and the damage to the components in the non-reaction area is avoided.

The high-frequency radio-frequency power supply is applied to the upper electrode or the lower electrode through a high-frequency radio-frequency matching network and is used for controlling the plasma concentration in the reaction cavity. The bias RF power is typically applied to the susceptor to control the direction of the plasma.

Before etching process, firstly placing silicon wafer oxidized by furnace tube process in vacuum reaction cavity, then introducing organic etching gas including H ₂、SiH₄ and one or more of O ₂, CO and CO ₂, then applying a high-frequency radio-frequency signal, under the excitation of radio-frequency signal, the organic gas is excited into plasma to bombard the oxidized silicon wafer, covering high-compactness silicon dioxide molecules on the surface of the part, so as to form high-compactness silicon film.

The Capacitive Coupling Plasma (CCP) etching equipment adopts the processing method of the invention to uniformly form a layer of high-density silicon film on the surface of a part possibly contacting plasma in an etching cavity, thereby isolating the Y ₂O₃ coating or Al ₂O₃/SiC coating protection layer of the part from being in direct contact with the plasma, reducing the possibility of micro-particle pollution formed by the etching process, and simultaneously avoiding the unstable influence on the etching rate caused by the adsorption of H or C in organic etching gas on the surface of the part.

Example 4

An inductively coupled plasma reaction apparatus (ICP) etching apparatus is an apparatus in which energy of a radio frequency power source is introduced into the interior of a reaction chamber in the form of magnetic field coupling through an induction coil, thereby generating plasma and being used for etching. As shown in fig. 11, a schematic structure of an inductively coupled plasma reactor (ICP) is shown, and the lower electrode assemblies of the ICP and CCP are similar in structure.

The inductively coupled plasma reactor comprises a vacuum reaction chamber 100, wherein the vacuum reaction chamber comprises a substantially cylindrical reaction chamber side wall 105 made of a metal material, an insulating window 130 is arranged above the reaction chamber side wall 105, an inductive coupling coil 140 is arranged above the insulating window 130, and the inductive coupling coil 140 is connected with a radio frequency power source 145.

The reaction chamber side wall 105 is provided with a gas injection port 150 at one end near the insulating window 130, and in some apparatuses, a gas injection port is provided in a central region of the insulating window 130, and the gas injection port 150 is connected to the gas supply device 101. The reaction gas in the gas supply device 101 enters the vacuum reaction chamber 100 through the gas injection port 150, and the rf power of the rf power source 145 drives the inductive coupling coil 140 to generate a strong high-frequency alternating magnetic field, so that the reaction gas with low pressure is ionized to generate the plasma 160. A susceptor 110 is disposed at a position downstream of the vacuum reaction chamber 100, and an electrostatic chuck 115 is disposed on the susceptor 110 for supporting and fixing the substrate 120. The plasma 160 contains a large number of active particles such as electrons, ions, atoms in an excited state, molecules, free radicals and the like, and the active particles can react with the surface of the substrate to be processed in various physical and chemical ways, so that the shape of the surface of the substrate is changed, and the etching process is completed. An exhaust pump 125 is also provided below the vacuum reaction chamber 100 for exhausting the reaction byproducts from the vacuum reaction chamber.

Before etching process, firstly placing silicon wafer oxidized by furnace tube process in vacuum reaction cavity, then introducing organic etching gas including H ₂、SiH₄ and one or more of O ₂, CO and CO ₂, then applying a high-frequency radio-frequency signal, under the excitation of radio-frequency signal, the organic gas is excited into plasma to bombard the thermally oxidized silicon wafer, covering high-compactness silicon dioxide molecules on the surface of the part, so as to form high-compactness silicon film.

The inductively coupled plasma (CCP) etching equipment adopts the treatment method to uniformly form a layer of high-density silicon film on the surface of a part possibly contacting plasma in an etching cavity, isolates the direct contact between a Y ₂O₃ coating or an Al ₂O₃/SiC coating protective layer of the part and the plasma, reduces the possibility of micro-particle pollution formed by an etching process, and simultaneously avoids the unstable influence on the etching rate caused by the adsorption of H or C in organic etching gas on the surface of the part.

The component for improving the plasma etching rate disclosed in the present invention is not limited to be applied to the plasma processing apparatus of the above two embodiments, and may be applied to other plasma processing apparatuses, and will not be described herein.

While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.

Claims (17)

1. A method for improving plasma etching rate, characterized in that the method comprises the following steps: Placing the components in a vacuum reaction chamber; Placing a silicon wafer that has undergone thermal oxidation treatment in the vacuum reaction chamber; Introducing an organic etching gas into the vacuum reaction chamber; Applying a radio frequency signal to the vacuum reaction chamber, the radio frequency signal excites the organic etching gas into plasma, and the particles generated by the plasma bombardment of the silicon wafer form a silicon film on the surface of the component; The components refer to the components in the vacuum reaction chamber that are in contact with the plasma. 2. The treatment method according to claim 1, characterized in that the thermal oxidation treatment comprises the following steps: The silicon wafer is placed in a furnace tube with a temperature greater than 800° C., and H ₂ and O ₂ are introduced, wherein the flow ratio of H ₂ to O ₂ is 1:4-4:1. 3. The treatment method according to claim 2, characterized in that the flow ratio of _H2 and _O2 is 10:7-13:10. 4 . The processing method according to claim 1 , wherein the organic etching gas comprises H ₂ , SiH ₄ and an oxygen-containing gas. 5. The treatment method according to claim 4, characterized in that the oxygen-containing gas comprises one or more of _O2 , CO and _CO2 . 6. The processing method according to claim 5, characterized in that the temperature of the plasma is less than 130°C. 7. The processing method according to claim 1 is characterized in that the process conditions of the plasma are: pressure less than 150mT; RF power greater than 200W; RF frequency range 2-60MHZ. 8. The processing method according to claim 7, characterized in that the radio frequency signal adopts a continuous mode or a pulse mode. 9. The processing method according to claim 1, characterized in that the thickness of the silicon film is less than 30 nm. 10. The processing method as described in claim 1 is characterized in that the components include at least one of the inner wall of the reaction chamber, a grounding ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring, a plasma confinement device and a liner. 11. The processing method according to claim 1 is characterized in that a protective layer for preventing plasma corrosion is provided on the surface of the component. 12 . The processing method according to claim 11 , wherein the protective layer is a Y ₂ O ₃ coating or an Al ₂ O ₃ /SiC coating. 13. The processing method according to claim 11, characterized in that a silicon coating is provided on the protective layer to prevent the generation of pollutants. 14. A component for use in a plasma processing environment, comprising a component body, wherein a protective layer for preventing plasma corrosion is provided on the surface of the body, the protective layer being a Y ₂ O ₃ coating or an Al ₂ O ₃ /SiC coating, and A silicon film wrapped around the outer surface of the protective layer; the silicon film is formed by the processing method described in any one of claims 1-13. 15. The component according to claim 14, characterized in that the component refers to a component in contact with plasma in the vacuum reaction chamber, including at least one of an inner wall of the reaction chamber, a grounding ring, a moving ring, an electrostatic chuck assembly, a covering ring, a focusing ring, an insulating ring, a plasma confinement device and an inner liner. 16. A gas shower head for a plasma processing device, characterized in that the gas shower head comprises: Gas sprinkler head body; A protective layer for preventing plasma corrosion wrapped on the surface of the body, the protective layer is a Y ₂ O ₃ coating or an Al ₂ O ₃ /SiC coating, and A silicon film wrapped around the outer surface of the protective layer; the silicon film is formed by the processing method described in any one of claims 1-13. 17. A plasma processing device, characterized in that the device comprises: a vacuum reaction chamber, and components located in the vacuum reaction chamber and in contact with plasma, wherein the components are the components described in claim 14.