CN114643428A - Through-hole formation method of substrate - Google Patents
Through-hole formation method of substrate Download PDFInfo
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- CN114643428A CN114643428A CN202011497717.3A CN202011497717A CN114643428A CN 114643428 A CN114643428 A CN 114643428A CN 202011497717 A CN202011497717 A CN 202011497717A CN 114643428 A CN114643428 A CN 114643428A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B23K26/382—Removing material by boring or cutting by boring
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
Description
技术领域technical field
一种基板的贯通孔形成方法,改善现有贯通孔方法形成大孔径贯通孔的耗时较长,且容易导致基板因蚀刻过久而过薄的问题。A method for forming a through hole in a substrate improves the conventional through hole method that takes a long time to form a through hole with a large diameter, and easily leads to the problem that the substrate is too thin due to prolonged etching.
背景技术Background technique
电子产业不断演进,各式电子组件在追求高质量的同时,型态上也逐渐趋于轻薄短小,以半导体芯片来说,半导体芯片通常由硅或砷化镓等半导体材料所构成,过去半导体芯片为二维集成电路(2D IC),使用打线技术(Wire Bonding)及覆晶封装(Flip Chip),然而半导体芯片的线路图案随着技术演进逐渐缩小至数十纳米,导线数量及信号接脚数量的增加,使得打线难度增高,且覆晶封装技术只能封装单层芯片,难以应付半导体芯片所需的信号接脚数量,因此研发出三维集成电路(3D IC),以期突破二维集成电路的结构限制,实现较二维集成电路更高的效能表现。The electronic industry is constantly evolving. While various electronic components are pursuing high quality, they also tend to be light, thin, and short. For semiconductor chips, semiconductor chips are usually composed of semiconductor materials such as silicon or gallium arsenide. In the past, semiconductor chips It is a two-dimensional integrated circuit (2D IC), using Wire Bonding and Flip Chip. However, the circuit pattern of a semiconductor chip is gradually reduced to tens of nanometers with the evolution of technology. The number of wires and signal pins The increase in the number makes the wire bonding more difficult, and the flip-chip packaging technology can only package single-layer chips, which is difficult to cope with the number of signal pins required by semiconductor chips. Therefore, a three-dimensional integrated circuit (3D IC) has been developed to break through two-dimensional integration. Due to the structural limitations of the circuit, it can achieve higher performance than two-dimensional integrated circuits.
目前三维集成电路主要是以硅贯通孔(Through Silicon Via,TSV)制成的硅中介层,于硅贯通孔中填入导电材料,来链接垂直堆叠的多片芯片,实现高效能半导体芯片所需的布线数量及输入输出接脚的密度,由此可见形成贯通孔技术的重要性。At present, three-dimensional integrated circuits are mainly silicon interposers made of through silicon vias (TSVs), and conductive materials are filled in the through silicon vias to link vertically stacked multiple chips to achieve high-performance semiconductor chips. The number of wirings and the density of input and output pins show the importance of forming through-hole technology.
在形成贯通孔的制程技术方面,目前多采用激光束,透过将激光束的焦点聚焦于欲形成一贯通孔的位置对基板进行烧蚀以形成一预贯通孔,但是使用激光束来烧蚀材料时,材料的表面纹理及材料状态可能因热能而发生改变,导致基板产生裂纹,另一方面,激光束所形成的所述预贯通孔其孔径较小,不一定符合所述贯通孔所需要的孔径,因此于激光(雷射)烧蚀后会进一步将基板置于蚀刻液中,借由蚀刻增加所述预贯通孔的孔径,并消除所述预贯通孔表面的裂纹及不平整。In terms of the process technology for forming through holes, a laser beam is currently used. By focusing the focus of the laser beam on the position where the through hole is to be formed, the substrate is ablated to form a pre-through hole, but a laser beam is used for ablation. When the material is used, the surface texture and material state of the material may be changed due to thermal energy, resulting in cracks in the substrate. On the other hand, the pre-through hole formed by the laser beam has a small diameter, which may not meet the needs of the through hole. Therefore, after laser (laser) ablation, the substrate will be further placed in the etching solution, the aperture of the pre-through hole will be increased by etching, and the crack and unevenness of the surface of the pre-through hole will be eliminated.
然而,当所需所述贯通孔的孔径较大时,由于激光束能形成的单一预贯通孔孔径有限,因此需要拉长基板后续浸于蚀刻液中的时间,才有办法形成符合尺寸需求的贯通孔,增加作业流程耗费的时间,此外,除了所述预贯通孔的孔径大小,基板本身厚度亦会因蚀刻而变薄,当蚀刻时间拉长,容易发生基板厚度过薄的问题。However, when the required diameter of the through hole is relatively large, since the diameter of a single pre-through hole that can be formed by the laser beam is limited, it is necessary to lengthen the time for the substrate to be immersed in the etching solution subsequently, in order to form a hole that meets the size requirements. Through holes increase the time consuming of the operation process. In addition, in addition to the aperture size of the pre-through holes, the thickness of the substrate itself will also become thinner due to etching. When the etching time is prolonged, the problem of excessively thin substrate thickness is likely to occur.
发明内容SUMMARY OF THE INVENTION
有鉴于此,本发明提供一种基板的贯通孔形成方法,以期改善形成大孔径贯通孔时,耗时较长且容易导致基板因蚀刻过久而厚度过薄的问题。In view of this, the present invention provides a method for forming a through hole of a substrate, in order to improve the problem that when forming a through hole with a large diameter, it takes a long time and the substrate is easily etched for too long and the thickness is too thin.
为达成前述目的,本发明基板的贯通孔形成方法包含有:In order to achieve the aforementioned purpose, the method for forming the through hole of the substrate of the present invention includes:
于一基板以激光(雷射)加工技术形成直径为ψ3的多个预贯通孔,其中所述基板上预设有直径ψ1的一第一圆周,所述第一圆周对应于欲成形的一贯通孔,而所述第一圆周内定义有直径为ψ2的一第二圆周,多个所述预贯通孔沿着所述第二圆周设置,且ψ1大于ψ2,ψ2大于ψ3;A plurality of pre-through holes with a diameter of ψ3 are formed on a substrate by laser (laser) processing technology, wherein a first circumference with a diameter of ψ1 is preset on the substrate, and the first circumference corresponds to the through-hole to be formed. A second circumference with a diameter of ψ2 is defined in the first circumference, a plurality of the pre-through holes are arranged along the second circumference, and ψ1 is greater than ψ2, and ψ2 is greater than ψ3;
将含多个所述预贯通孔的所述基板浸于一蚀刻池进行蚀刻;以及The substrate containing a plurality of the pre-through holes is immersed in an etching tank for etching; and
所述基板上的多个所述预贯通孔经由蚀刻达到一蚀刻时间后,调整为直径ψ1的所述贯通孔。After the plurality of pre-through holes on the substrate are etched for an etching time, they are adjusted to be the through holes with a diameter of ψ1.
本发明于所述第一圆周中以激光(雷射)形成多个预贯通孔,并将所述基板浸于所述蚀刻池中,使各所述预贯通孔同时进行蚀刻,以形成所述贯通孔,与现有技术以单一贯通孔进行蚀刻以形成所需的贯通孔相比,本发明于所述基板上的所述第一圆周中形成多个所述预贯通孔,借由多个预贯通孔同时进行蚀刻,减少蚀刻所需时间,进而缩短形成所述贯通孔的作业流程所耗费的时间,并避免所述基板因蚀刻过久而厚度过薄的问题。In the present invention, a plurality of pre-through holes are formed by laser (laser) in the first circumference, and the substrate is immersed in the etching bath, so that each of the pre-through holes is etched at the same time to form the Through holes, compared with the prior art where a single through hole is etched to form the required through holes, the present invention forms a plurality of the pre-through holes in the first circumference on the substrate. The pre-through hole is etched at the same time, which reduces the time required for etching, thereby shortens the time spent in the process of forming the through hole, and avoids the problem that the thickness of the substrate is too thin due to prolonged etching.
附图说明Description of drawings
在此描述的附图仅用于解释目的,而不意图以任何方式来限制本发明公开的范围。另外,图中的各部件的形状和比例尺寸等仅为示意性的,用于帮助对本发明的理解,并不是具体限定本发明各部件的形状和比例尺寸。本领域的技术人员在本发明的教导下,可以根据具体情况选择各种可能的形状和比例尺寸来实施本发明。The drawings described herein are for explanatory purposes only and are not intended to limit the scope of the present disclosure in any way. In addition, the shapes and proportions of the components in the figures are only schematic and are used to help the understanding of the present invention, and do not specifically limit the shapes and proportions of the components of the present invention. Under the teachings of the present invention, those skilled in the art can select various possible shapes and proportions according to specific conditions to implement the present invention.
图1为本发明基板的贯通孔形成方法的步骤流程图。FIG. 1 is a flow chart of the steps of a method for forming a through hole of a substrate according to the present invention.
图2A为本发明基板的贯通孔形成方法中激光加工预贯通孔的平面示意图。FIG. 2A is a schematic plan view of a laser processing pre-through hole in a method for forming a through hole of a substrate according to the present invention.
图2B为本发明基板的贯通孔形成方法中表示预贯通孔形成顺序的平面示意图。2B is a schematic plan view showing the sequence of forming the pre-through hole in the method for forming the through hole of the substrate of the present invention.
图2C为本发明基板的贯通孔形成方法中表示预贯通孔形成顺序的另一平面示意图。2C is another schematic plan view showing the sequence of forming the pre-through hole in the method for forming the through hole of the substrate according to the present invention.
图3为形成贝塞尔光束的示意图。FIG. 3 is a schematic diagram of forming a Bessel beam.
图4为本发明基板的贯通孔形成方法中蚀刻形成蚀刻孔的平面示意图。4 is a schematic plan view of forming an etching hole by etching in the method for forming a through hole of a substrate of the present invention.
图5为本发明基板的贯通孔形成方法中蚀刻形成蚀刻孔的另一平面示意图。FIG. 5 is another schematic plan view of forming an etching hole by etching in the method for forming a through hole of the substrate according to the present invention.
图6为本发明基板的贯通孔形成方法中蚀刻形成环形蚀刻孔的平面示意图。FIG. 6 is a schematic plan view of forming an annular etching hole by etching in a method for forming a through hole of a substrate according to the present invention.
图7为本发明基板的贯通孔形成方法中蚀刻形成贯通孔的平面示意图。7 is a schematic plan view of forming a through hole by etching in the method for forming a through hole of a substrate of the present invention.
具体实施方式Detailed ways
结合附图和本发明具体实施方式的描述,能够更加清楚地了解本发明的细节。但是,在此描述的本发明的具体实施方式,仅用于解释本发明的目的,而不能以任何方式理解成是对本发明的限制。在本发明的教导下,技术人员可以构想基于本发明的任意可能的变形,这些都应被视为属于本发明的范围。The details of the present invention can be more clearly understood with reference to the accompanying drawings and the description of the specific embodiments of the present invention. However, the specific embodiments of the present invention described herein are only for the purpose of explaining the present invention, and should not be construed as limiting the present invention in any way. Under the teaching of the present invention, the skilled person can conceive any possible modifications based on the present invention, and these should be regarded as belonging to the scope of the present invention.
需要说明的是,当组件被称为“固定于”或“设置于”另一个组件,它可以直接在另一个组件上或者可能存在居中组件。当一个组件被称为是“连接于”另一个组件,它可以是直接连接到另一个组件或者可能存在居中组件。It should be noted that when a component is referred to as being "fixed to" or "disposed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected" to another component, it can be directly connected to the other component or there may be an intervening component.
请参看图1所示,本发明基板的贯通孔形成方法包含:Referring to FIG. 1 , the method for forming a through hole of a substrate of the present invention includes:
步骤S101:配合参考图2A,先准备一基板10,于所述基板10的表面以激光(雷射)加工技术形成多个预贯通孔13,其中所述基板10的表面上预设有直径ψ1的一第一圆周11,所述第一圆周11的形状、大小与位置对应欲成形的一贯通孔的形状、大小与位置,而所述第一圆周11内定义有一第二圆周12,所述第二圆周12的直径为ψ2,并沿着所述第二圆周12以激光(雷射)加工形成直径为ψ3的多个所述预贯通孔13,且ψ1大于ψ2,ψ2大于ψ3,当欲于所述基板10形成直径ψ1的所述贯通孔时,即于所述基板10上设置预定要形成所述贯通孔的所述第一圆周11,而于所述第二圆周12上形成多个所述预贯通孔13时,于本实施例中,各所述预贯通孔13间的间隔距离相等,亦可于直径为ψ2的所述第二圆周12上以不同的间隔距离任意形成各所述预贯通孔13,但各所述预贯通孔13形成的位置亦可相互重叠,不以本实施例为限。于本实施例中,各所述预贯通孔13的圆心位于直径为ψ2的所述第二圆周12上,且欲成型的所述贯通孔的直径ψ1其宽度介于20μm至200μm之间,即20μm<ψ1<200μm,但所述贯通孔的直径ψ1不以本实施例为限。Step S101 : with reference to FIG. 2A , a
请参看图2B所示,在步骤S101中,激光(雷射)聚焦于所述基板10烧蚀形成多个所述预贯通孔13前,本发明基板的贯通孔形成方法可将欲形成多个所述预贯通孔13的位置以同一轴向上不同的轴线区分,根据欲设置各所述预贯通孔13位置其所处的轴线不同,以扫描式的方式依序形成各所述预贯通孔13,先形成同一轴在线的各所述预贯通孔13,再形成邻近的下一轴在线的各所述预贯通孔13,举例来说,图2B中欲形成一预贯通孔13A的位置位于一第一轴线L1上,欲形成一预贯通孔13B及一预贯通孔13C的位置位于一第二轴线L2上,因此步骤S101中先烧蚀形成所述第一轴线L1上的所述预贯通孔13A,再以所述第一轴线L1至所述第二轴线L2的方向移动所述基板10或激光(雷射)方向,烧蚀形成所述第二轴线L2上的所述预贯通孔13B及所述预贯通孔13C,以此类推,再以所述第二轴线L2至一第三轴线L3的方向移动所述基板10或激光(雷射)方向进行后续的激光(雷射)加工。进一步参看图2C所示,本发明于步骤S101中以激光(雷射)加工形成一预贯通孔13后,亦可以依序形成与所述预贯通孔13相邻的下一预贯通孔13,举例来说,步骤S101中先形成一预贯通孔13A后,再形成邻近所述预贯通孔13A的一预贯通孔13B,而形成所述预贯通孔13B后再,形成邻近所述预贯通孔13B的一预贯通孔13C,以此类推。Referring to FIG. 2B , in step S101 , before the laser (laser) is focused on the
在步骤S101中,激光(雷射)聚焦于所述基板10上进行烧蚀以形成多个所述预贯通孔13时,由于激光(雷射)烧蚀透过激光(雷射)光聚焦的光点于所述基板10的表面局部加热,使所述基板10产生局部熔化、气化等热效应而达成形成多个所述预贯通孔13的目的,除多个所述预贯通孔13的区域外,激光(雷射)的热能亦会影响多个所述预贯通孔13周围的区域发生质变,于多个所述预贯通孔13外围形成热影响区。进一步参看图3所示,于本实施例中,步骤S101可透过高斯雷射或贝塞尔光束(Bessel Beam)20的激光技术形成多个所述预贯通孔13,其中贝塞尔光束20首先可由激光(雷射)光源经过一锥形透镜(Axicon Lens)21先产生一第一贝塞尔光束20A,并透过多个透镜22增加后续贝塞尔光束20的锥角,且由一空间滤波器(Spatial Filter)23滤除额外的频谱分量,进而产生质量较高的一第二贝塞尔光束20B,由所述第二贝塞尔光束20B对所述基板10进行激光(雷射)加工产生多个所述预贯通孔13,而所述贝塞尔光束20长焦深的光强度分布特性,使得所述贝塞尔光束20可形成高径深比的微孔,换句话说,所述贝塞尔光束20可于所述基板10上形成细长的微小贯通孔,但本发明基板的贯通孔形成方法所使用的激光技术不以此为限。In step S101 , when a laser (laser) is focused on the
步骤S102:将含多个所述预贯通孔13的所述基板10浸于一蚀刻池进行蚀刻。Step S102 : the
步骤S102中,当所述基板10浸于所述蚀刻池中,所述蚀刻池中的蚀刻液即蚀刻所述基板10的表面,且蚀刻液流入多个所述预贯通孔13中,对各所述预贯通孔13进行蚀刻,蚀刻液可蚀刻去除各所述预贯通孔13其表面的粗糙部分,并蚀刻去除位于热影响区的所述基板10,意即去除受激光(雷射)加工产生的热能影响而结构改变的部分基板10,避免热影响区内的部分基板10产生裂纹,其中,所述蚀刻池可包含氢氟酸(HF)、盐酸、硫酸或硝酸等强酸液的蚀刻液,可借由调整每种酸类的浓度及含量来控制蚀刻液的酸碱值,且当所述基板10浸于所述蚀刻池中进行蚀刻时,可进一步以超音波震荡所述蚀刻池,以利将蚀刻所产生的杂质移离所述基板10及各所述预贯通孔13的表面,避免杂质堆积于所述基板10的表面或各所述预贯通孔13因蚀刻产生的杂质堆积于孔洞内而阻塞,进而影响蚀刻作业进行。In step S102, when the
步骤S103:如图4所示,所述基板10上的多个所述预贯通孔13经由蚀刻调整为直径为ψ4的多个蚀刻孔14,且多个所述蚀刻孔14可相互连通而构成一花形蚀刻孔15,其中,ψ4大于ψ3。Step S103 : as shown in FIG. 4 , the plurality of
步骤S103中,由于所述基板10浸于所述蚀刻池中,多个所述预贯通孔13的表面与蚀刻液接触,使得多个所述预贯通孔13的直径随着蚀刻液的蚀刻作用而逐渐扩大,透过蚀刻液的蚀刻作用,多个所述预贯通孔13经蚀刻调整为直径为ψ4的多个所述蚀刻孔14,且各多个所述蚀刻孔14可相互连通,形成所述花型预贯通孔15。In step S103, since the
请参看图4、图5及图6所示,图4中所述花形蚀刻孔15的孔缘上包含有多个夹角处151及多个弧形边缘152,当所述基板10持续浸于所述蚀刻池中,由于各所述夹角处151为两个弧形边缘152的表面的交界处,蚀刻液同时自两个弧形边缘152的表面对各所述夹角处151进行蚀刻,使得各所述夹角处151的蚀刻速率大于各所述弧形边缘152的蚀刻速率,当所述花形蚀刻孔15经过一段时间的蚀刻作用后,由于各所述夹角处151与各所述弧形边缘152的蚀刻速率差异,图5中所述花形蚀刻孔15的花形孔缘因蚀刻液作用而越加平缓,而随着蚀刻作用图5中的所述花形蚀刻孔15经蚀刻调整为图6中的一环形蚀刻孔16,其中,所述环形蚀刻孔16与所述花形蚀刻孔15的差异在于各所述夹角处151经蚀刻而趋向平整,且各所述弧形边缘152的弯曲度亦随蚀刻作用而趋向平缓,使得相互连接的各所述弧形边缘152构成所述环形蚀刻孔16的环形孔缘。Referring to FIGS. 4 , 5 and 6 , the edge of the flower-shaped
步骤S104:如图7所示,所述基板10上的多个所述蚀刻孔14调整为直径ψ1的所述贯通孔,所述贯通孔与预先设置的所述第一圆周11重叠,即完成蚀刻程序,于所述基板10上形成所需的所述贯通孔,其中,借由所述蚀刻池中蚀刻液的成分比例,可预先得知蚀刻液对所述基板10其构成材料的一蚀刻速率,且ψ1、ψ2、ψ3、ψ4是已知的默认值,由所述蚀刻速率计算出自多个所述预贯通孔13蚀刻调整为所述贯通孔所需的一蚀刻时间,所述蚀刻时间可为一默认值,根据所述蚀刻时间控制及调整所述基板10的蚀刻流程,当所述基板10已蚀刻达所述蚀刻时间时,代表所述基板10已蚀刻形成所述贯通孔,即将所述基板10自所述蚀刻池取出,以避免所述贯通孔因过度蚀刻而无法符合需要的形状、大小或位置。Step S104 : As shown in FIG. 7 , the plurality of etching holes 14 on the
综上所述,本发明与现有技术以单一贯通孔进行蚀刻以形成所需的贯通孔相比,本发明于所述基板10上的所述第一圆周11中形成多个所述预贯通孔13,借由多个预贯通孔13同时进行蚀刻,减少蚀刻所需时间,进而缩短形成所述贯通孔的作业流程所耗费的时间,并避免所述基板10因蚀刻过久而厚度过薄的问题,且各所述预贯通孔13设置于同一第二圆周12上,使得各所述预贯通孔13蚀刻过程中依序形成所述花形蚀刻孔15及所述环形蚀刻孔16,让各所述预贯通孔13于蚀刻过程中能逐步调整孔缘的形状,使最终所述贯通孔符合所需的贯通孔形状。To sum up, compared with the prior art where a single through hole is etched to form the required through hole, the present invention forms a plurality of the pre-through holes in the
针对上述各实施方式的详细解释,其目的仅在于对本发明进行解释,以便于能够更好地理解本发明,但是,这些描述不能以任何理由解释成是对本发明的限制,特别是,在不同的实施方式中描述的各个特征也可以相互任意组合,从而组成其他实施方式,除了有明确相反的描述,这些特征应被理解为能够应用于任何一个实施方式中,而并不仅局限于所描述的实施方式。The purpose of the detailed explanations for the above-mentioned embodiments is only to explain the present invention so that the present invention can be better understood. However, these descriptions should not be construed to limit the present invention for any reason. The various features described in the embodiments can also be arbitrarily combined with each other to form other embodiments, unless there is an explicit description to the contrary, these features should be understood as being applicable to any embodiment, and not limited to the described implementation. Way.
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19922257A1 (en) * | 1999-05-14 | 2000-11-16 | Siemens Ag | Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching |
CN1392829A (en) * | 2000-10-11 | 2003-01-22 | 松下电器产业株式会社 | Circuit board production method and circuit board production data |
CN101102648A (en) * | 2006-07-04 | 2008-01-09 | 日东电工株式会社 | Through hole forming method and wiring circuit board manufacturing method |
JP2009061668A (en) * | 2007-09-06 | 2009-03-26 | Canon Inc | Processing method of silicon substrate, and manufacturing method of liquid discharge head |
JP2009061667A (en) * | 2007-09-06 | 2009-03-26 | Canon Inc | Silicon substrate processing method and liquid jet head manufacturing method |
CN106132627A (en) * | 2015-01-13 | 2016-11-16 | 罗芬-新纳技术公司 | For fragile material being carried out scribing and carrying out the method and system of chemical etching subsequently |
CN107540232A (en) * | 2016-06-23 | 2018-01-05 | 奥特司科技株式会社 | glass processing method |
US20190119150A1 (en) * | 2017-10-20 | 2019-04-25 | Corning Incorporated | Methods for laser processing transparent workpieces using pulsed laser beam focal lines and chemical etching solutions |
US20200283325A1 (en) * | 2019-03-05 | 2020-09-10 | Corning Incorporated | Methods for linear laser processing of transparent workpieces using pulsed laser beam focal lines and chemical etching solutions |
-
2020
- 2020-12-17 CN CN202011497717.3A patent/CN114643428A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19922257A1 (en) * | 1999-05-14 | 2000-11-16 | Siemens Ag | Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching |
CN1392829A (en) * | 2000-10-11 | 2003-01-22 | 松下电器产业株式会社 | Circuit board production method and circuit board production data |
CN101102648A (en) * | 2006-07-04 | 2008-01-09 | 日东电工株式会社 | Through hole forming method and wiring circuit board manufacturing method |
JP2009061668A (en) * | 2007-09-06 | 2009-03-26 | Canon Inc | Processing method of silicon substrate, and manufacturing method of liquid discharge head |
JP2009061667A (en) * | 2007-09-06 | 2009-03-26 | Canon Inc | Silicon substrate processing method and liquid jet head manufacturing method |
CN106132627A (en) * | 2015-01-13 | 2016-11-16 | 罗芬-新纳技术公司 | For fragile material being carried out scribing and carrying out the method and system of chemical etching subsequently |
CN107540232A (en) * | 2016-06-23 | 2018-01-05 | 奥特司科技株式会社 | glass processing method |
US20190119150A1 (en) * | 2017-10-20 | 2019-04-25 | Corning Incorporated | Methods for laser processing transparent workpieces using pulsed laser beam focal lines and chemical etching solutions |
US20200283325A1 (en) * | 2019-03-05 | 2020-09-10 | Corning Incorporated | Methods for linear laser processing of transparent workpieces using pulsed laser beam focal lines and chemical etching solutions |
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