CN114628276A - Semiconductor diffusion apparatus - Google Patents

Abstract

The invention belongs to the technical field of semiconductor processing equipment, and in particular relates to a semiconductor diffusion equipment. The semiconductor diffusion equipment includes: a diffusion furnace body, which is used for accommodating a wafer boat carrying wafers; a cooling device, the cooling medium input end of the cooling device extends into the interior of the diffusion furnace body, and the The cooling device is used for introducing a cooling gas medium into the diffusion furnace body. According to the semiconductor diffusion equipment of the present invention, the cooling medium enters the inside of the diffusion furnace and is first mixed with the high-temperature gas, thereby preventing the cooling medium from directly contacting the outer wall of the diffusion furnace and preventing the high-temperature diffusion furnace from suddenly contacting the cooling medium and breaking. At the same time, the service life of the diffusion furnace body can also be improved.

Description

Semiconductor Diffusion Equipment

technical field

The application belongs to the technical field of semiconductor processing equipment, and in particular relates to a semiconductor diffusion equipment.

Background technique

This section provides merely background information related to the present disclosure and is not necessarily prior art.

The semiconductor diffusion process is to dope a certain amount and type of impurities into the wafer to change the electrical properties of the wafer. The semiconductor diffusion process is generally realized by diffusion equipment. The wafer to be diffused is put into the diffusion equipment, and the heating device of the diffusion equipment heats the wafer. During the heating process of the wafer, impurities diffuse into the wafer. After the diffusion process is completed, the inside of the diffusion device is generally cooled by the semiconductor diffusion device, so as to reduce the temperature of the wafer inside the diffusion device.

In the existing diffusion equipment, cooling gas is usually introduced into the diffusion furnace body and the heating device, and the heat of the diffusion furnace body is taken away by the heat exchange between the cooling gas and the outside of the diffusion furnace body, thereby cooling the diffusion furnace body. Due to the high internal temperature of the diffusion furnace body, the outer wall of the diffusion furnace body is often ruptured when the cooling gas contacts the outside of the higher temperature diffusion furnace body, thereby affecting the normal use of the diffusion furnace body, even if the outer wall of the diffusion furnace body is Without rupture, frequent contact of the outer wall of the high temperature diffusion furnace body with the cooling medium will also affect the life of the diffusion furnace body.

SUMMARY OF THE INVENTION

The present invention provides a semiconductor diffusion device, which comprises: a diffusion furnace body, which is used for accommodating a wafer boat carrying wafers; a cooling device, the cooling medium input end of which extends into the cooling device Inside the diffusion furnace body, the cooling device is used for introducing a cooling gas medium into the diffusion furnace body.

Description of drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. The drawings are for the purpose of illustrating specific embodiments only, and are not to be considered limiting of the present application. Also, the same components are denoted by the same reference numerals throughout the drawings. in:

FIG. 1 is a schematic structural diagram of a semiconductor diffusion apparatus of the present invention.

Reference number:

100: semiconductor diffusion equipment;

10: Diffusion furnace body, 11: Crystal boat, 12: Outer tube, 13: Inner tube, 14: Bottom cover, 101: First accommodating space, 102: First accommodating space;

20: cooling device, 21: cooling nozzle, 211: cooling medium outlet, 212: nozzle, 22: air supply mechanism, 23: intake line;

30: vacuum device, 31: exhaust line;

40: Heating device.

Detailed ways

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various chambers and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and may vary in practice due to manufacturing tolerances or technical limitations, and those skilled in the art will The chambers/layers can be additionally designed with different shapes, sizes, relative positions as desired.

In the context of this disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. element. In addition, if a layer/element is "on" another layer/element in one orientation, then when the orientation is reversed, the layer/element can be "under" the other layer/element.

As shown in FIG. 1, an embodiment of the present invention provides a semiconductor diffusion apparatus 100. The semiconductor diffusion apparatus 100 includes a diffusion furnace body 10 and a cooling device 20. The diffusion furnace body 10 is used for accommodating a wafer boat 11 carrying wafers, and cooling The cooling medium input end of the device 20 extends into the inside of the diffusion furnace body 10 , and the cooling device 20 is used for introducing a cooling gas medium into the diffusion furnace body 10 .

According to the semiconductor diffusion apparatus 100 of the embodiment of the present invention, the cooling medium input end of the cooling device 20 extends into the interior of the diffusion furnace body 10, and the cooling medium enters the interior of the diffusion furnace body 10 through the input end to mix with the high temperature gas inside the diffusion furnace body 10, The cooling medium exchanges heat with the high-temperature gas, thereby reducing the gas temperature in the diffusion furnace 10, and the gas in the diffusion furnace 10 exchanges heat with the diffusion furnace 10, thereby reducing the temperature of the diffusion furnace 10, thereby reducing the bearing capacity of the wafer. The temperature of the wafer boat 11 ultimately achieves the purpose of lowering the temperature of the wafer. The cooling medium enters the inside of the diffusion furnace 10 and is first mixed with the high temperature gas, thereby preventing the cooling medium from directly contacting the outer wall of the diffusion furnace 10 and preventing the high temperature diffusion furnace 10 from suddenly contacting the cooling medium and breaking. At the same time, the service life of the diffusion furnace body 10 can also be improved.

The cooling device 20 includes a cooling nozzle 21 and an air supply mechanism 22 , wherein the cooling nozzle 21 is the cooling medium input end of the cooling device 20 . The air supply mechanism 22 is communicated with the cooling nozzle 21 through the intake line 23 , and the air supply mechanism 22 is used for supplying cooling medium to the cooling nozzle 21 . Specifically, the gas supply mechanism 22 can be in the form of a gas storage tank and a gas compressor, and the gas compressor compresses the gas in the gas storage tank 22 to a certain pressure, and transports it to the cooling nozzle 21 through a pipeline, and the cooling nozzle 21 It is sprayed into the diffusion furnace body 10 .

In some embodiments of the present invention, the diffusion furnace body 10 includes an outer tube 12 , an inner tube 13 and a wafer boat 11 , wherein the outer tube 12 is sleeved on the inner tube 13 , the inner tube 13 is sleeved on the wafer boat 11 , and the outer tube is sleeved on the wafer boat 11 . A first accommodating space 101 is formed between 12 and the inner tube 13 , a second accommodating space 102 is formed between the inner tube 13 and the wafer boat 11 , and the first accommodating space 101 and the second accommodating space 102 pass through the opening at the top of the inner tube 13 Structural connectivity.

Further, the diffusion furnace body 10 further includes a bottom cover 14, the bottom cover 14 is detachably connected with the outer tube 12, and the bottom cover 14 and the outer tube 12 form a closed space to prevent leakage of the cooling medium. One end of the bottom cover 14 and the inner tube 13 is detachably connected, and the other end of the inner tube 13 is an opening structure. The bottom cover 14 is detachably connected to the wafer boat 11 . Specifically, the detachable connection may be a screw connection or a snap connection. The bottom cover 14 is provided with an air intake line 23 , and two ends of the air intake line 23 are respectively connected to the air supply mechanism 22 and the cooling nozzle 21 .

Further, the cooling nozzle 21 is located in the second accommodating space 102, and the cooling medium enters the second accommodating space 102 between the inner pipe 12 and the wafer boat 11 through the cooling nozzle 21, so that the cooling medium directly interacts with the wafer boat 11 and the inner pipe. The high temperature gas between 12 is mixed, so as to achieve the purpose of cooling the wafer boat 11 rapidly.

Further, one end of the cooling nozzle 21 extends from the bottom end of the diffusion furnace body 10 to the top end of the diffusion furnace body 10 , and the top end of the cooling nozzle 21 is provided with a cooling medium outlet 211 . The cooling medium is input into the inside of the diffusion furnace 10 from the cooling medium outlet 211 at the tip of the cooling nozzle 21 . Since the first accommodating space 101 and the second accommodating space 102 are communicated through the opening structure at the top of the inner tube 13 , the cooling medium outlet 211 is located at the top of the second accommodating space 102 to facilitate the diffusion of the cooling medium into the first accommodating space 101 , so that part of the cooling medium exchanges heat with the high-temperature gas in the first accommodating space 101 , and at the same time, another part of the cooling medium exchanges heat with the high-temperature gas in the second accommodating space 102 , thereby improving the cooling of the diffusion furnace 10 by the cooling device 20 speed.

Further, the number of cooling nozzles 21 is at least two, and at least two cooling nozzles 21 extend into the second accommodating space 102 to increase the cooling speed of the diffusion furnace 10 by the cooling device 20 . The greater the number of cooling nozzles 21 , the faster the cooling device 20 can cool the diffusion furnace body 10 .

Specifically, at least two cooling nozzles 21 are evenly arranged along the circumferential direction of the diffusion furnace body 10 . In order to ensure that the cooling medium evenly fills the first accommodating space 101 and the second accommodating space 102 , thereby ensuring uniform cooling of the diffusion furnace body 10 . The inner diameter of the cooling nozzle 21 is greater than 0.1 mm, and the volume flow of the cooling nozzle 21 is greater than 100 sccm, so as to ensure the cooling speed of the diffusion furnace 10 .

Further, the cooling nozzle 21 is provided with a plurality of nozzles 212 along the length direction thereof, and the plurality of nozzles 212 are arranged along the length direction of the wafer boat 11 . When the cooling medium is transported from the bottom end of the cooling nozzle 21 to the cooling medium outlet 211, it is sprayed into the second accommodating space 102 through the nozzle 212, thereby increasing the diffusion speed of the cooling medium in the second accommodating space 102, thereby improving the second accommodating space 102. Cooling rate of space 102 .

The plurality of nozzles 212 are evenly arranged on the cooling nozzle 21 to ensure that the cooling medium is uniformly mixed with the high-temperature gas in each area of the second accommodating space 102, that is, the temperature of the mixed gas is uniform, thereby ensuring uniform cooling of the inner tube 13 and the wafer boat 11. .

In some embodiments of the present invention, the semiconductor diffusion apparatus 100 further includes a vacuum device 30, the vacuum device 30 communicates with the first accommodating space 101 through an exhaust line 31 passing through the bottom cover 14, and the vacuum device 30 is used for exhausting the diffusion furnace The mixed gas in the body 10. The cooling medium enters the second accommodating space 102 and diffuses into the first accommodating space 101 , and then the mixed gas of the cooling medium and the high-temperature gas is discharged out of the diffusion furnace 10 through the vacuum device 30 . The semiconductor diffusion apparatus 100 of this embodiment utilizes the existing vacuum device 30 to discharge the mixed gas, thereby improving the utilization rate of the vacuum device 30 , and at the same time, the use of external exhaust equipment is reduced, and the structure of the semiconductor diffusion apparatus 100 is simpler. In addition, a certain cost of external equipment can be saved. In addition, the vacuum equipment 30 is used to discharge the gas of the diffusion furnace 10 in the non-cooled state of the semiconductor diffusion equipment 100 so that the inside of the diffusion furnace 10 is in a vacuum state.

In other embodiments of the present invention, the cooling nozzle 21 can be arranged in the first accommodating space 101, the vacuum device 30 is connected to the second accommodating space 102, and part of the vacuum medium enters the second accommodating space 102 through the cooling nozzle 21, and the vacuum The medium and the high-temperature gas in the second accommodating space 102 enter the first accommodating space 101 after being mixed with the high-temperature gas, and the diffusion furnace body 10 is removed by the vacuum device 30 . At the same time, another part of the vacuum medium enters the first accommodating space 101 through the opening structure at the top of the inner tube 13 , and the mixed gas and the high-temperature gas in the first accommodating space 101 are then removed from the diffusion furnace 10 through the vacuum device 30 .

In some embodiments of the present invention, the cooling nozzle 21 is made of materials such as quartz, silicon carbide, silicon, and the like. The cooling nozzle 21 made of quartz, silicon carbide, silicon and other materials has the characteristics of high temperature resistance. When the cooling nozzle 21 meets the high temperature gas in the diffusion furnace body 10, the cooling nozzle 21 is prevented from breaking.

In some embodiments of the present invention, the semiconductor diffusion apparatus 100 further includes a heating device 40 , the heating device 40 is arranged around the diffusion furnace body 10 , and the heating device 40 heats the diffusion furnace body 10 , so that the diffusion furnace body 10 can be heated by the heating device 40 . The wafer heats up, and impurities diffuse into the wafer at high temperature, so as to achieve the purpose of diffusion.

The cooling medium in this embodiment is compressed nitrogen. In other embodiments, the cooling medium may also be air or other gases that do not chemically react with the diffusion furnace body 10 .

Embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only, and are not intended to limit the scope of the present disclosure. In order to achieve the same purpose, those skilled in the art can also design methods that are not exactly the same as those described above. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and these substitutions and modifications should all fall within the scope of the present disclosure.

Claims (10)

1. A semiconductor diffusion apparatus, characterized in that the semiconductor diffusion apparatus comprises:

the diffusion furnace body is used for accommodating a wafer boat for bearing wafers;

and the cooling medium input end of the cooling device extends into the diffusion furnace body, and the cooling device is used for introducing a cooling gas medium into the diffusion furnace body.

2. The semiconductor diffusion device according to claim 1, wherein the cooling device comprises a cooling nozzle for communicating with a gas supply mechanism, and one end of the cooling nozzle extends from the bottom end of the diffusion furnace body to the top end of the diffusion furnace body.

3. The semiconductor diffusion device of claim 2, wherein the tip of the cooling lance is provided with a cooling medium outlet.

4. The semiconductor diffusion device according to claim 2, wherein the diffusion furnace body comprises an inner tube and a boat, the inner tube is sleeved on the boat, a second accommodating space is formed between the inner tube and the boat, and the cooling nozzle is located in the second accommodating space.

5. The semiconductor diffusion device according to claim 4, wherein the diffusion furnace body further comprises an outer tube, the outer tube is sleeved on the inner tube, a first accommodating space is formed between the outer tube and the inner tube, and the first accommodating space is communicated with the second accommodating space.

6. The semiconductor diffusion apparatus of claim 4, further comprising a vacuum device in communication with the first receiving space, the vacuum device for evacuating gas within the diffusion furnace body.

7. The semiconductor diffusion apparatus of any one of claims 1 to 6, wherein the number of cooling lances is at least two.

8. The semiconductor diffusion apparatus of claim 7, wherein at least two of the cooling lances are arranged uniformly along a circumference of the diffusion furnace body.

9. The semiconductor diffusion apparatus according to any one of claims 1 to 6, wherein the cooling lance is made of quartz, silicon carbide, silicon or the like.

10. The semiconductor diffusion apparatus according to any one of claims 1 to 6, further comprising a heating device disposed around the diffusion furnace body, the heating device being for heating the diffusion furnace body.

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