CN114613700B - Cutting reworking method of chip package - Google Patents
Cutting reworking method of chip package Download PDFInfo
- Publication number
- CN114613700B CN114613700B CN202210250644.0A CN202210250644A CN114613700B CN 114613700 B CN114613700 B CN 114613700B CN 202210250644 A CN202210250644 A CN 202210250644A CN 114613700 B CN114613700 B CN 114613700B
- Authority
- CN
- China
- Prior art keywords
- wafer
- film
- cutting
- particle
- new film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
The invention provides a cutting reworking method of chip packaging, which comprises the steps of transferring and attaching poorly cut wafer particles from an old film to another new film, enabling the position of each wafer particle on the new film to be consistent with that of each wafer particle on the old film, enabling the distance between each wafer particle on the new film to be larger than the width of a cutting path formed by cutting on the old film, attaching the wafer particles to the new film, performing plastic packaging, re-molding each wafer particle into an integral wafer, re-attaching the film on the wafer after plastic packaging is completed, and performing reworking cutting to form the wafer particles. The method can solve the problem of bad wafer particles generated by cutting position deviation, skew and the like when cutting the wafer, and avoid bringing trouble to the subsequent process, thereby avoiding a great amount of economic loss and improving the economic benefit of enterprises.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a cutting reworking method of chip packaging.
Background
Semiconductor packaging refers to the process of processing a wafer that passes testing to obtain individual chips according to product model and functional requirements. The packaging process comprises dicing the wafer from wafer front process, attaching the diced wafer to island of corresponding substrate (Lead frame) frame with glue, connecting bonding Pad (Bond Pad) of the wafer to corresponding Lead (Lead) of the substrate with superfine metal (gold tin copper aluminum) wire or conductive resin, and forming required circuit, packaging and protecting the independent wafer with plastic shell, performing a series of operations after plastic packaging, testing the finished product after packaging, and storing and delivering.
In the prior art, in a semiconductor packaging process, a wafer provided by a customer is required to be cut and packaged to form a chip package, the wafer provided by the customer is round, in the packaging process, the wafer is required to be adhered to a film to be cut to form a chip, then the chip on the film is adhered to another film to be arranged to form a square, the later packaging operation and the cutting operation are facilitated, the packaging operation is performed after the film is adhered, and the cutting is performed after the packaging is completed to form the chip package.
However, when the wafer is cut, the conditions of cutting position deviation, skew and the like are found, so that great trouble is brought to the subsequent process, most of the wafer is damaged, economic loss is caused, and economic benefit is reduced.
Disclosure of Invention
The invention provides a cutting reworking method of a chip package, which can solve the problems.
The technical scheme adopted by the invention is as follows:
The chip package cutting reworking method includes transferring and adhering poorly cut wafer particles from old film to other new film, adhering the wafer particles to the new film in the same position as the old film, adhering the new film to the new film in the distance greater than the cutting path width, plastic packaging, re-plastic packaging to form integral wafer, re-adhering film, and re-cutting to form the wafer particles.
Further, the distance between each wafer particle on the new film is not more than 2mm.
Further, the distance between each wafer particle on the new film is 0.5mm.
Further, the poorly cut wafer particles are transferred from the old film to another new film, the distance between each wafer particle on the new film is larger than the width of the dicing channel formed by cutting on the old film, and after the wafer particles are attached to the new film, plastic packaging is performed, so that the new film can be replaced by a substrate for packaging.
Further, after plastic packaging is completed, the wafer is re-adhered with the film, reworking cutting is performed to form wafer particles, and when reworking cutting is performed, the cutting channel width of cutting is increased, so that the size of each wafer particle cut is ensured to be the same as that of the wafer particle cut on the original old film.
Compared with the prior art, the invention has the beneficial effects that the poorly cut wafer particles are transferred and attached to another new film from the old film, the position of each wafer particle on the new film is consistent with that of each wafer particle on the old film, the distance between each wafer particle on the new film is larger than the width of a cutting path formed by cutting on the old film, after the wafer particles are attached to the new film, plastic packaging is carried out, each wafer particle is plastic packaged again to form an integral wafer, after plastic packaging is completed, the wafer is attached again to the film, and reworking cutting is carried out to form the wafer particles. The method can solve the problem of bad wafer particles generated by cutting position deviation, skew and the like when cutting the wafer, and avoid bringing trouble to the subsequent process, thereby avoiding a great amount of economic loss and improving the economic benefit of enterprises.
Detailed Description
The present invention will be described with reference to specific embodiments.
Examples of the various specific processes and materials provided herein are those of ordinary skill in the art and will recognize the application of other processes and/or the use of other materials.
According to the cutting reworking method of the chip package, poorly cut wafer particles are transferred and attached to another new film from an old film, the position of each wafer particle on the new film is consistent with that of each wafer particle on the old film, the distance between each wafer particle on the new film is larger than the width of a cutting channel formed by cutting on the old film, after the wafer particles are attached to the new film, plastic package packaging is carried out, each wafer particle is subjected to plastic package again to form an integral wafer, after plastic package is completed, the wafer is subjected to film attaching again, and reworking cutting is carried out again to form the wafer particles.
In practical application, the distance between each wafer particle on the new film is not more than 2mm, if the distance is more than 2mm, the surface mounting and the later cutting are not facilitated, the distance is increased, and the plastic packaging cost is increased, so that the distance between each wafer particle on the new film is optimally adjusted to 0.5mm in the application process.
And after the plastic packaging is finished, re-attaching the film on the wafer, and then carrying out reworking cutting to form wafer particles, wherein the width of a cutting path for cutting is increased when reworking cutting is carried out, so that the size of each wafer particle cut is ensured to be the same as that of the wafer particle cut on the original old film.
In other embodiments, poorly cut wafer particles are transferred from an old film to a new film, the distance between each wafer particle on the new film is greater than the width of a dicing channel formed by cutting the old film, and when the wafer particles are attached to the new film, the new film can be replaced by a substrate for packaging during plastic packaging, so that the reliability of plastic packaging is improved.
Compared with the prior art, the method has the advantages that poorly cut wafer particles are transferred and attached to another new film from the old film, the position of each wafer particle on the new film is consistent with that of each wafer particle on the old film, the distance between each wafer particle on the new film is larger than the width of a cutting channel formed by cutting on the old film, after the wafer particles are attached to the new film, plastic packaging is carried out, each wafer particle is subjected to plastic packaging again to form an integral wafer, after plastic packaging is completed, the wafer is subjected to film attaching again, and reworking cutting is carried out to form the wafer particles. The method can solve the problem of bad wafer particles generated by cutting position deviation, skew and the like when cutting the wafer, and avoid bringing trouble to the subsequent process, thereby avoiding a great amount of economic loss and improving the economic benefit of enterprises.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (4)
1. A cutting reworking method of chip package is characterized by transferring and attaching poorly cut wafer particles from old film to another new film, and the position of each wafer particle on the new film is consistent with that of each wafer particle on the old film, the distance between each wafer particle on the new film is larger than the width of a cutting channel formed by cutting on the old film, after attaching to the new film, plastic packaging is carried out, each wafer particle is plastic packaged again to form an integral wafer, after plastic packaging is completed, the wafer is film-attached again, reworking cutting is carried out again to form wafer particles, and when reworking cutting is carried out, the cutting channel width of cutting is increased, so that the size of each wafer particle cut is ensured to be identical with that of the wafer particle formed by cutting on the original old film.
2. A method of dicing rework of a chip package as recited in claim 1, wherein the distance between each wafer particle on the new film is no greater than 2mm.
3. A method of dicing rework of a chip package as recited in claim 2, wherein the distance between each wafer particle on the new film is 0.5mm.
4. The method according to claim 1, wherein the wafer particles with poor dicing are transferred from the old film to the new film, the distance between each wafer particle on the new film is larger than the width of the dicing channel formed by dicing on the old film, and after the wafer particles are bonded to the new film, the wafer particles are subjected to plastic packaging, and the new film can be replaced with a substrate for packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210250644.0A CN114613700B (en) | 2022-03-15 | 2022-03-15 | Cutting reworking method of chip package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210250644.0A CN114613700B (en) | 2022-03-15 | 2022-03-15 | Cutting reworking method of chip package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114613700A CN114613700A (en) | 2022-06-10 |
| CN114613700B true CN114613700B (en) | 2024-11-29 |
Family
ID=81862270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210250644.0A Active CN114613700B (en) | 2022-03-15 | 2022-03-15 | Cutting reworking method of chip package |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114613700B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118782481B (en) * | 2024-09-04 | 2025-03-14 | 长电集成电路(绍兴)有限公司 | Reworking method of plastic package sheet |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533783A (en) * | 2008-03-13 | 2009-09-16 | 上海凯虹电子有限公司 | Thin quad flat no-lead package method |
| CN110323162A (en) * | 2019-05-08 | 2019-10-11 | 京东方科技集团股份有限公司 | A kind of flood tide transfer device and flood tide transfer method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7969015B2 (en) * | 2005-06-14 | 2011-06-28 | Cufer Asset Ltd. L.L.C. | Inverse chip connector |
| KR20100042445A (en) * | 2008-10-16 | 2010-04-26 | 삼성전기주식회사 | The camera module manufacturing method which uses the wafer level package |
| CN113192851B (en) * | 2021-04-29 | 2024-03-29 | 长沙新雷半导体科技有限公司 | Wafer packaging method |
-
2022
- 2022-03-15 CN CN202210250644.0A patent/CN114613700B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533783A (en) * | 2008-03-13 | 2009-09-16 | 上海凯虹电子有限公司 | Thin quad flat no-lead package method |
| CN110323162A (en) * | 2019-05-08 | 2019-10-11 | 京东方科技集团股份有限公司 | A kind of flood tide transfer device and flood tide transfer method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114613700A (en) | 2022-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100318551B1 (en) | Wafer Splitting Method and Semiconductor Device Manufacturing Method | |
| US6916686B2 (en) | Method of manufacturing a semiconductor device | |
| JP4409014B2 (en) | Manufacturing method of semiconductor device | |
| US6558975B2 (en) | Process for producing semiconductor device | |
| US20090111218A1 (en) | Stack mcp and manufacturing method thereof | |
| JP2002026039A (en) | Method for manufacturing semiconductor device | |
| JP2007266557A (en) | Method of manufacturing semiconductor device | |
| WO2005053013A1 (en) | Flip chip bonding method for enhancing the performance of connection in flip chip packaging process and layered metal architecture of substrate for stud bump | |
| CN108011608B (en) | Wafer-level packaging structure and packaging process applied to surface acoustic wave filter | |
| CN112992809A (en) | Wafer-level embedded silicon wafer supporting fan-out packaging structure and packaging process | |
| CN114613700B (en) | Cutting reworking method of chip package | |
| CN102263080B (en) | Packaging component for quad flat no-pin triple IC (Integrated Circuit) chip with double salient points and manufacturing method thereof | |
| US7273768B2 (en) | Wafer-level package and IC module assembly method for the wafer-level package | |
| JP2005340431A (en) | Method for manufacturing semiconductor device | |
| CN107146777A (en) | A cutting-free packaging structure and its manufacturing process | |
| CN208796987U (en) | A kind of lead frame and its ultrathin small shape flip-chip packaged part | |
| CN107564950B (en) | Wafer, semiconductor package and manufacturing method thereof | |
| CN108648999A (en) | Method for packing semiconductor | |
| Cheung | Dicing die attach films for high volume stacked die application | |
| JP2000195826A (en) | Method of dividing wafer and manufacture of semiconductor device | |
| CN112490208A (en) | Chip packaging structure with inductor | |
| CN216902939U (en) | Packaging structure of high-voltage chip | |
| CN115376930A (en) | A kind of semiconductor packaging method | |
| US20060197203A1 (en) | Die structure of package and method of manufacturing the same | |
| JP2003179006A (en) | Wafer dividing method and method of manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |