CN114613697B - Cleaning method for reducing particles on surface of semiconductor substrate wafer - Google Patents
Cleaning method for reducing particles on surface of semiconductor substrate wafer Download PDFInfo
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- CN114613697B CN114613697B CN202210224877.3A CN202210224877A CN114613697B CN 114613697 B CN114613697 B CN 114613697B CN 202210224877 A CN202210224877 A CN 202210224877A CN 114613697 B CN114613697 B CN 114613697B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 89
- 239000002245 particle Substances 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000001603 reducing effect Effects 0.000 title claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000008367 deionised water Substances 0.000 claims abstract description 37
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 37
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 29
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 23
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 238000000861 blow drying Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000004018 waxing Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 abstract description 100
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 24
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 239000001993 wax Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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- 230000008439 repair process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明涉及降低半导体衬底晶片表面颗粒的清洗方法，包括如下步骤：对半导体衬底晶片进行超声波清洗，其中超声波清洗包括依次进行的超声波去蜡清洗、超声波去离子水清洗；超声波去蜡清洗时的超声波频率为25KHz；超声波去离子水清洗时依次采用频率为40KHz、80KHz、120KHz的顺便进行清洗；对超声波清洗后的半导体衬底晶片进行化学试剂清洗；对半导体衬底晶片进行兆声波清洗，兆声波清洗时的频率为0.9MHz～1.2MHz；本发明的方法能够有效降低砷化镓和磷化铟晶片表面的残留颗粒缺陷，颗粒度小于100个/片，提高了晶片表面质量和产品良率；方法成本低、实用性强，适用于半导体晶片的批量生产。
The invention relates to a cleaning method for reducing particles on the surface of a semiconductor substrate wafer, comprising the following steps: ultrasonic cleaning of the semiconductor substrate wafer, wherein the ultrasonic cleaning comprises ultrasonic dewaxing cleaning and ultrasonic deionized water cleaning performed in sequence; the ultrasonic frequency during the ultrasonic dewaxing cleaning is 25KHz; the ultrasonic deionized water cleaning is sequentially performed with frequencies of 40KHz, 80KHz and 120KHz; chemical reagent cleaning of the semiconductor substrate wafer after ultrasonic cleaning; megasonic cleaning of the semiconductor substrate wafer, wherein the frequency of the megasonic cleaning is 0.9MHz-1.2MHz; the method of the invention can effectively reduce residual particle defects on the surface of gallium arsenide and indium phosphide wafers, wherein the particle size is less than 100 per wafer, thereby improving the surface quality of the wafer and the product yield; the method has low cost and strong practicability, and is suitable for mass production of semiconductor wafers.
Description
Technical Field
The invention belongs to the technical field of semiconductor wafer processing, and particularly relates to a cleaning method for reducing particles on the surface of a semiconductor substrate wafer.
Background
The III-V compound semiconductor materials such as gallium arsenide (GaAs), indium phosphide (InP) and the like have high saturated electron drift velocity, strong radiation resistance and the like, and are used as substrate materials in the fields of key electronic components such as optoelectronic devices, microelectronic devices and the like.
The surface granularity is an important performance index for representing the surface quality of a semiconductor wafer, and the semiconductor wafer such as gallium arsenide, indium phosphide and the like is used as a substrate material for preparing the epitaxial structure material of photoelectrons and microelectronic devices, and the particles on the surface of the wafer have important influence on the performance of the epitaxial material. The wafer surface particles may extend into the epitaxial structure material as surface defects or defects, reducing the epitaxial material quality and thereby affecting the improvement of device performance, and therefore the wafer surface particles must be sufficiently reduced to improve the wafer surface quality.
At present, the existing method for reducing the surface particles of the wafer is to clean the wafer by chemical agents, but the method can not sufficiently remove the surface particles because the surface particles of the wafer are numerous and reach 500 particles/piece, so in order to further reduce the surface particles of the wafer and improve the quality of materials, a cleaning method for reducing the surface particles of the wafer, which can effectively remove the surface particles of the wafer and improve the quality and the yield of the wafer of the semiconductor substrate needs to be studied.
Disclosure of Invention
The invention provides a layered injection and production intelligent control switch tool, which can control carbon dioxide layered injection, layered well-flushing, layered blowout and layered oil production for multiple times in various modes on the premise of not moving an injection and production string, so as to achieve the purposes of balanced injection displacement of carbon dioxide, differential effective well-flushing, interlayer interference reduction, oil layer utilization degree improvement, carbon dioxide utilization rate improvement, throughput production efficiency improvement, well repair workload reduction, well occupation time reduction, oil layer pollution prevention and operation cost reduction.
The invention solves the technical problems by adopting the following technical scheme:
the cleaning method for reducing particles on the surface of a semiconductor substrate wafer comprises the following steps:
ultrasonic cleaning is carried out on a semiconductor substrate wafer, wherein the ultrasonic cleaning comprises ultrasonic dewaxing cleaning and ultrasonic deionized water cleaning which are sequentially carried out, the ultrasonic frequency during ultrasonic dewaxing cleaning is 25KHz, and the ultrasonic deionized water cleaning is carried out by adopting the frequency of 40KHz, 80KHz and 120 KHz;
Carrying out chemical reagent cleaning on the semiconductor substrate wafer subjected to ultrasonic cleaning, wherein sulfuric acid is adopted as a chemical reagent;
And carrying out megasonic cleaning on the semiconductor substrate wafer cleaned by the chemical reagent, wherein the frequency of megasonic cleaning is 0.9 MHz-1.2 MHz.
Further, the chemical reagent cleaning comprises the following steps:
Placing the semiconductor substrate wafer in sulfuric acid with the temperature of 50-80 ℃ for corrosion for 30-60 s, and removing organic impurities and metal impurities on the surface of the wafer;
And (3) placing the semiconductor substrate wafer in sulfuric acid with the temperature of 20-30 ℃ for corrosion for 60-120 s, and further removing metal impurities on the surface of the wafer.
Further, the megasonic cleaning comprises the following steps:
Cleaning a semiconductor substrate wafer by deionized water megasonic waves for 2-5min, wherein the megasonic frequency is 0.9MHz-1.2MHz, and removing particles with the particle size smaller than 0.5 mu m on the surface of the wafer;
spin-drying or blow-drying the semiconductor substrate wafer.
Further, the ultrasonic dewaxing cleaning comprises the following steps:
placing the polished semiconductor substrate wafer in a dewaxing agent with the temperature of 60-80 ℃, and carrying out ultrasonic cleaning for 5-10min, wherein the ultrasonic frequency is 25KHz;
And then placing the semiconductor substrate wafer subjected to ultrasonic cleaning in absolute ethyl alcohol at 20-30 ℃ for 3-5min, wherein the ultrasonic frequency is 25KHz.
Further, the ultrasonic deionized water cleaning comprises the following steps:
Placing the semiconductor substrate wafer subjected to ultrasonic dewaxing cleaning in deionized water, and performing ultrasonic cleaning for 3-5min at an ultrasonic frequency of 40KHz and a deionized water temperature of 20-30 ℃ to remove particles with a particle size of 2-50 mu m on the surface of the wafer;
The semiconductor substrate after being cleaned by ultrasonic deionized water is cleaned by deionized water again, the ultrasonic frequency is 80KHz, and particles with the particle size of 1-5 mu m on the surface of the wafer are removed;
And (3) cleaning the semiconductor substrate cleaned by ultrasonic deionized water again by deionized water, wherein the ultrasonic frequency is 120KHz, and removing particles with the particle size of 0.5-3 mu m on the surface of the wafer.
Further, the dewaxing agent is a neutral organic dewaxing agent, and the pH value is 7.0-8.0.
Further, the megasonic cleaning is single-chip cleaning, the temperature of deionized water is 20-30 ℃, and the water flow is 0.9-1.5L/min.
Further, the semiconductor substrate wafer is a gallium arsenide semiconductor substrate wafer or an indium phosphide semiconductor substrate wafer.
The invention has the advantages and positive effects that:
the method can effectively reduce the residual particle defects on the surfaces of the gallium arsenide and indium phosphide wafers, has granularity smaller than 100 particles/wafer, improves the quality of the wafer surface and the yield of products, has low cost and strong practicability, and is suitable for the batch production of semiconductor wafers.
Drawings
The technical solution of the present invention will be described in further detail below with reference to the accompanying drawings and examples, but it should be understood that these drawings are designed for the purpose of illustration only and thus are not limiting the scope of the present invention. Moreover, unless specifically indicated otherwise, the drawings are intended to conceptually illustrate the structural configurations described herein and are not necessarily drawn to scale.
FIG. 1 is a graph showing the particle size measurement of the surface of a GaAs wafer before cleaning in example 2;
FIG. 2 is a graph showing the surface granularity of the GaAs wafer after being cleaned by the method of the present invention in example 2;
FIG. 3 is a graph showing the detection of particles on the surface of a GaAs wafer after the cleaning of scheme 1 in example 3;
FIG. 4 is a graph showing the detection of particles on the surface of a GaAs wafer after the cleaning of scheme 2 in example 3;
FIG. 5 is a graph showing the detection of particles on the surface of a GaAs wafer after the cleaning of scheme 3 in example 3;
FIG. 6 is a graph showing the detection of particles on the surface of a GaAs wafer after the cleaning of scheme 4 in example 4;
FIG. 7 is a graph showing the detection of particles on the surface of a GaAs wafer after the cleaning of scheme 5 in example 4.
Detailed Description
First, it should be noted that the following detailed description of the specific structure, characteristics, advantages, and the like of the present invention will be given by way of example, however, all descriptions are merely illustrative, and should not be construed as limiting the present invention in any way. Furthermore, any single feature described or implied in the embodiments mentioned herein, or any single feature shown or implied in the figures, may nevertheless be continued in any combination or pruning between these features (or equivalents thereof) to obtain still further embodiments of the invention that may not be directly mentioned herein. In addition, for the sake of simplicity of the drawing, identical or similar features may be indicated at one point in the same drawing.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
Example 1
The cleaning method for reducing particles on the surface of a semiconductor substrate wafer provided by the embodiment comprises the following steps:
ultrasonic cleaning is carried out on a semiconductor substrate wafer, wherein the ultrasonic cleaning comprises ultrasonic dewaxing cleaning and ultrasonic deionized water cleaning which are sequentially carried out, the ultrasonic frequency during ultrasonic dewaxing cleaning is 25KHz, and the ultrasonic deionized water cleaning is carried out by adopting the frequency of 40KHz, 80KHz and 120 KHz;
Carrying out chemical reagent cleaning on the semiconductor substrate wafer subjected to ultrasonic cleaning, wherein sulfuric acid is adopted as a chemical reagent;
And carrying out megasonic cleaning on the semiconductor substrate wafer cleaned by the chemical reagent, wherein the frequency of megasonic cleaning is 0.9 MHz-1.2 MHz.
Specifically, the ultrasonic dewaxing cleaning comprises the following steps:
Placing the polished semiconductor substrate wafer in a dewaxing agent with the temperature of 60-80 ℃, and carrying out ultrasonic cleaning for 5-10min and the ultrasonic frequency of 25KHz, wherein the dewaxing agent is a neutral organic dewaxing agent, and the pH value is 7.0-8.0;
And then placing the semiconductor substrate wafer subjected to ultrasonic cleaning in absolute ethyl alcohol at 20-30 ℃ for 3-5min, wherein the ultrasonic frequency is 25KHz.
The ultrasonic deionized water cleaning method comprises the following steps:
Placing the semiconductor substrate wafer subjected to ultrasonic dewaxing cleaning in deionized water, and performing ultrasonic cleaning for 3-5min at an ultrasonic frequency of 40KHz and a deionized water temperature of 20-30 ℃ to remove particles with a particle size of 2-50 mu m on the surface of the wafer;
The semiconductor substrate after being cleaned by ultrasonic deionized water is cleaned by deionized water again, the ultrasonic cleaning is carried out for 3-5min, the temperature of the deionized water is 20-30 ℃, the ultrasonic frequency is 80KHz, and particles with the particle size of 1-5 mu m on the surface of the wafer are removed;
and (3) cleaning the semiconductor substrate cleaned by ultrasonic deionized water again by deionized water, wherein the ultrasonic cleaning is carried out for 3-5min, the deionized water temperature is 20-30 ℃, the ultrasonic frequency is 120KHz, and particles with the particle size of 0.5-3 mu m on the surface of the wafer are removed.
Specifically, the chemical reagent cleaning comprises the following steps:
placing a semiconductor substrate wafer in concentrated sulfuric acid (the concentration is more than 95%) with the temperature of 50-80 ℃ for corrosion for 30-60 s, and removing organic impurities and metal impurities on the surface of the wafer;
And (3) placing the semiconductor substrate wafer in concentrated sulfuric acid (the concentration is more than 95%) with the temperature of 20-30 ℃ for corrosion for 60-120 seconds, and further removing metal impurities on the surface of the wafer, wherein the sulfuric acid is of MOS grade or UP grade.
Specifically, the megasonic cleaning comprises the following steps:
The method comprises the steps of cleaning a semiconductor substrate wafer by using megasonic waves of deionized water for 2-5min, wherein the megasonic frequency is 0.9MHz-1.2MHz, and particles with the particle size smaller than 0.5 mu m on the surface of the wafer are removed, wherein the megasonic cleaning is single-chip cleaning, the deionized water temperature is 20-30 ℃, and the water flow is 0.9-1.5L/min;
the semiconductor substrate wafer is spin-dried or nitrogen gas is blow-dried.
Example 2
The method of example 1 was used to clean gallium arsenide (GaAs) semiconductor substrate wafers, the granularity of the gallium arsenide wafer surface before cleaning was 5390 (fig. 1), 20 (fig. 2), and the reduction rate was (5390-20)/5390=99.6%, demonstrating that the method of example 1 was used to effectively remove residual particles on the gallium arsenide wafer surface.
Example 3
In this example, the GaAs wafer was subjected to ultrasonic cleaning, chemical reagent cleaning, megasonic cleaning, and the specific implementation procedure is shown in table 1.
TABLE 1
The GaAs wafer is cleaned only by ultrasonic, the embodiment is shown as sample No. 1 in Table 1, the granularity of the wafer surface cleaned by ultrasonic is 671 (shown in figure 3), the reduction rate is (5390-671)/5390=87.5 percent, the ultrasonic cleaning can reduce the granularity of the wafer surface because the ultrasonic can generate high-energy sound waves to push the solution to do acceleration motion, the solution continuously impacts the wafer surface in an acceleration fluid mode to lead pollutants such as the particles on the wafer surface to leave the wafer surface and enter the solution, the ultrasonic waves with different frequencies can have cleaning effects on the particles with different particle diameters, and the paraffin remover can remove the organic wax on the wafer surface in the embodiment and then can achieve good granularity reducing effect by ultrasonic cleaning with different frequencies.
The GaAs wafer is cleaned by chemical reagent only, the embodiment is shown as sample No. 2 in Table 1, the granularity of the wafer surface cleaned by the chemical reagent is 1560 (shown in figure 4) and the reduction rate is 71.1 percent, the GaAs wafer is not cleaned by wax and ultrasonic waves with different frequencies in the process, the organic wax on the wafer surface has extremely strong adsorption to particles, and the concentrated sulfuric acid has a certain cleaning effect on the organic particles and metal impurities, but the reduction effect on the particles is general in general.
The GaAs wafer was megasonically cleaned only, with the embodiment shown in sample 3# in table 1, having 1913 megasonically cleaned wafer surface particles (as shown in fig. 5) with a reduction of 64.5%. The higher the ultrasonic frequency, the better the effect of removing particles with smaller particle size, and the better the effect of removing particles with particle size less than 0.5 μm by megasonic waves of 0.9MHz-1.2 MHz. In the process, the wafer is only cleaned by megasonic waves, the contamination of the organic wax on the surface of the wafer and the difficulty in effectively removing large particles are overcome, so that the overall particle reduction effect is general.
Example 4
In this example, the experimental effects of different cleaning sequences of ultrasonic cleaning, chemical reagent cleaning and megasonic cleaning of GaAs were analyzed, and specific embodiments are shown in table 2:
TABLE 2
In the scheme 4, the GaAs wafer is firstly subjected to ultrasonic cleaning and then megasonic cleaning, and finally subjected to chemical reagent cleaning, in the embodiment shown as sample # 4 in table 2, the number of particles on the wafer surface after cleaning is 198 (as shown in fig. 6) and the removal rate is 96.3%, in the scheme 5, the GaAs wafer is firstly subjected to wax cleaning and megasonic cleaning and then chemical reagent cleaning and finally subjected to ultrasonic cleaning, in the embodiment shown as 5# in table 2, the number of particles on the wafer surface after cleaning is 279 (as shown in fig. 7) and the removal rate is 94.8%, in the scheme 4 and the scheme 5, although the removal rate is very high, the wafer surface still has partial particles, mainly because the final cleaning chemical reagent cleaning and ultrasonic cleaning have a general effect on removing the tiny particles on the surface, and the bigger particles may be decomposed into tiny particles remained on the wafer surface after final chemical reagent cleaning and ultrasonic cleaning.
In comparative examples 2, 3 and 4, the GaAs wafer in example 2 can be cleaned by ultrasonic to remove the residual organic wax on the wafer surface, and cleaned by ultrasonic to 25KHz, 40KHz, 80KHz and 120KHz to reduce the particles above 0.5 μm, then cleaned by chemical agent to remove the residual organic particles and metal impurities, and finally cleaned by megasonic to reduce the particles below 0.5 μm, and the method of the invention can make the reduction rate of the particles on the wafer surface reach above 99%, which is better than the methods in examples 3 and 4.
The foregoing examples illustrate the invention in detail, but are merely preferred embodiments of the invention and are not to be construed as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (4)
1. The cleaning method for reducing particles on the surface of a semiconductor substrate wafer is characterized by comprising the following steps:
Ultrasonic dewaxing cleaning and ultrasonic deionized water cleaning, wherein the ultrasonic frequency is 25KHz during ultrasonic dewaxing cleaning, and the ultrasonic deionized water cleaning is sequentially carried out at the frequency of 40KHz, 80KHz and 120 KHz;
Carrying out chemical reagent cleaning on the semiconductor substrate wafer subjected to ultrasonic cleaning, wherein sulfuric acid is adopted as a chemical reagent;
megasonic cleaning is carried out on the semiconductor substrate wafer cleaned by the chemical reagent, and the frequency of megasonic cleaning is 0.9 MHz-1.2 MHz;
the chemical reagent cleaning comprises the following steps:
Placing the semiconductor substrate wafer in sulfuric acid with the temperature of 50-80 ℃ for corrosion for 30-60 s, and removing organic impurities and metal impurities on the surface of the wafer;
Placing the semiconductor substrate wafer in sulfuric acid with the temperature of 20-30 ℃ for corrosion for 60-120 s, and further removing metal impurities on the surface of the wafer;
The megasonic cleaning comprises the following steps:
Cleaning a semiconductor substrate wafer by deionized water megasonic waves for 2-5min, wherein the megasonic frequency is 0.9MHz-1.2MHz, and removing particles with the particle size smaller than 0.5 mu m on the surface of the wafer;
Spin-drying or blow-drying the semiconductor substrate wafer;
the ultrasonic dewaxing cleaning method comprises the following steps:
placing the polished semiconductor substrate wafer in a dewaxing agent with the temperature of 60-80 ℃, and carrying out ultrasonic cleaning for 5-10min, wherein the ultrasonic frequency is 25KHz;
then placing the semiconductor substrate wafer subjected to ultrasonic cleaning in absolute ethyl alcohol at 20-30 ℃ for 3-5min, wherein the ultrasonic frequency is 25KHz;
The ultrasonic deionized water cleaning method comprises the following steps:
Placing the semiconductor substrate wafer subjected to ultrasonic dewaxing cleaning in deionized water, and performing ultrasonic cleaning for 3-5min at an ultrasonic frequency of 40KHz and a deionized water temperature of 20-30 ℃ to remove particles with a particle size of 2-50 mu m on the surface of the wafer;
The semiconductor substrate after being cleaned by ultrasonic deionized water is cleaned by deionized water again, the ultrasonic frequency is 80KHz, and particles with the particle size of 1-5 mu m on the surface of the wafer are removed;
And (3) cleaning the semiconductor substrate cleaned by ultrasonic deionized water again by deionized water, wherein the ultrasonic frequency is 120KHz, and removing particles with the particle size of 0.5-3 mu m on the surface of the wafer.
2. The method for cleaning semiconductor substrate wafer surface particles as recited in claim 1, wherein the de-waxing agent is a neutral organic de-waxing agent with a pH of 7.0-8.0.
3. The method for reducing particles on a semiconductor substrate wafer surface according to claim 1, wherein the megasonic cleaning is a single-wafer cleaning, the deionized water temperature is 20-30 ℃, and the water flow is 0.9-1.5L/min.
4. The method for cleaning a semiconductor substrate wafer according to claim 1, wherein the semiconductor substrate wafer is a GaAs semiconductor substrate wafer or an InP semiconductor substrate wafer.
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