CN114609049B - A microsecond fast-axis adjustable photoelastic modulation ultra-high-speed generalized ellipsometric measurement device - Google Patents

Abstract

The invention belongs to the technical field of ellipsometry measuring devices, and particularly relates to a microsecond-level fast axis adjustable elasto-optical modulation ultra-high-speed generalized ellipsometry measuring device which comprises a polarization arm, a polarization detection arm and a sample table, wherein the polarization detection arm and the sample table are sequentially arranged in the light path direction of the polarization detection arm; the polarizing arm comprises a light source, a polarizer and a first fast axis adjustable circular elastic-optical modulator, wherein the polarizer and the first fast axis adjustable circular elastic-optical modulator are sequentially arranged in the light path direction of the light source, and a sample table is arranged in the light path direction of the first fast axis adjustable circular elastic-optical modulator. The ellipsometry method adopted by the invention has the advantages of single measurement, high measurement precision, simple calibration, wide spectrum range and the like. Compared with the mechanical rotation speed, the measuring device provided by the invention can be improved by 3-4 orders of magnitude, and the adopted 45-degree dual-drive fast-axis adjustable circular elasto-optical modulator has the advantages of wide spectrum range, high modulation speed, high stability and the like.

Description

A microsecond fast-axis adjustable photoelastic modulation ultra-high-speed generalized ellipsometric measurement device

Technical Field

The invention belongs to the technical field of ellipsometric measurement devices, and in particular relates to a microsecond-level fast-axis adjustable photoelastic modulation ultra-high-speed generalized ellipsometric measurement device.

Background Art

With the development of high-tech fields such as microelectronics, optical coatings, flat panel displays, nano-biology and new materials technology, high-precision ellipsometric thin film technology has become an important means of detection in this field. Ellipsometry measurement technology is a multifunctional optical measurement technology that obtains its optical constants (refractive index n, extinction coefficient k), film structure and thickness parameters by measuring the change in polarization state before and after the polarized light is incident on the object to be measured. Existing ellipsometric measurement technologies mainly include Mueller matrix partial element ellipsometric measurement and full Mueller matrix generalized ellipsometric measurement. The Mueller matrix partial element ellipsometric measurement system can only measure part of the Mueller matrix. Because it cannot obtain complete sample information, it is suitable for the measurement of non-depolarized or isotropic samples; the full Mueller matrix generalized ellipsometric measurement system can measure the entire Mueller matrix and is suitable for various sample measurements.

Generalized ellipsometry can obtain all 16 elements of the Mueller matrix in each measurement, thus providing more useful information to be measured, such as structural parameters, anisotropy and depolarization. Compared with scanning electron microscopy and transmission electron microscopy, generalized ellipsometry can measure physical and structural properties non-destructively. Therefore, generalized ellipsometry has been applied to industries such as microelectronics, optical coating, flat panel display and photovoltaic solar cells, and has gradually expanded its application to physical process observations such as biomolecular interactions, atomic deposition, molecular self-assembly, and material phase changes. It also shows great application potential in high-tech fields such as thin film detection, material characterization, nanostructure metrology, and biomedicine. With the requirements for high-speed measurement in microelectronics online in-situ detection and capturing the physical and biological transient mechanism changes of materials, the time resolution of the measurement needs to be at least sub-millisecond level, or even microsecond level; but the traditional generalized ellipsometry measurement technology is based on a mechanical rotary compensator, with a time resolution of seconds, which is 2 to 3 orders of magnitude different. Therefore, the development of microsecond-level ultra-high-speed generalized ellipsometry technology is of great significance for real-time in-situ detection of complex and fast processes.

In the existing generalized ellipsometric measurement based on phase modulators, although the phase of liquid crystal phase modulators and electro-optic phase modulators can be adjusted by changing the voltage, the fast axis direction can only be achieved by mechanical rotation, the measurement speed is limited, and the spectral application range is very narrow; due to the advantages of elastic-photoelastic modulation such as wide spectral range (ultraviolet to far infrared), high modulation rate (tens of kHz to hundreds of kHz), and good stability (working in a resonant state), it is widely used in high-precision polarization measurement, but the existing elastic-photoelastic modulation mainly works in pure standing wave mode and cannot achieve high-speed modulation in the fast axis direction.

Summary of the invention

In order to solve the technical problem of slow generalized ellipsometric measurement speed of the above-mentioned dual-rotation compensator, the present invention provides a microsecond-level fast-axis adjustable photoelastic modulation ultra-high-speed generalized ellipsometric measurement device. The device adopts a 45° dual-drive fast-axis adjustable circular photoelastic modulator, which can realize ultra-high-speed fast-axis adjustable photoelastic modulation in pure traveling wave mode, and can increase the speed by 3-4 orders of magnitude compared with the mechanical rotation speed, which will greatly improve the time resolution of generalized ellipsometric measurement.

In order to solve the above technical problems, the technical solution adopted by the present invention is:

A microsecond fast-axis adjustable elastic-light modulation ultra-high-speed generalized ellipsometric measurement device comprises a polarizing arm, an analyzing arm and a sample stage, wherein the analyzing arm and the sample stage are sequentially arranged in the optical path direction of the polarizing arm; the polarizing arm comprises a light source, a polarizer and a first fast-axis adjustable circular elastic-light modulator, wherein the polarizer and the first fast-axis adjustable circular elastic-light modulator are sequentially arranged in the optical path direction of the light source, and the sample stage is arranged in the optical path direction of the first fast-axis adjustable circular elastic-light modulator.

The polarization analyzer arm includes a detector, an analyzer and a second fast-axis adjustable circular light-elastic modulator. The polarization analyzer and the detector are arranged in sequence in the light path direction of the second fast-axis adjustable circular light-elastic modulator. The second fast-axis adjustable circular light-elastic modulator is arranged in the light path direction of the sample stage.

The first fast-axis adjustable circular light-elastic modulator and the second fast-axis adjustable circular light-elastic modulator both include a light-transmitting crystal, a first piezoelectric driver and a second piezoelectric driver, and the light-transmitting crystal is connected to the first piezoelectric driver and the second piezoelectric driver, respectively.

The light-transmitting crystal adopts a circular structure, the light-transmitting crystal adopts fused quartz, and the light-transmitting range of the light-transmitting crystal is 185nm-3500nm.

The included angle between the first piezoelectric driver and the second piezoelectric driver is 45°.

The light source adopts a complex light source and a monochromator with a wide spectrum range of 193nm-3200nm.

The first piezoelectric driver and the second piezoelectric driver both use piezoelectric α-quartz crystals.

The detector includes an ultraviolet high-speed photomultiplier tube, a silicon-based high-speed photodetector and an InAsSb photodetector. The ultraviolet high-speed photomultiplier tube detects the ultraviolet band, the silicon-based high-speed photodetector detects the visible near-infrared band, and the InAsSb photodetector detects the near-infrared and short-wave infrared band.

The first piezoelectric driver and the second piezoelectric driver are both arranged at the node position of the stress standing wave formed in the light-transmitting crystal, and the working frequency of the first piezoelectric driver and the second piezoelectric driver are consistent.

A rotating platform is fixed at the bottom of the analysis arm and the sample platform, and each rotating platform is connected to a stepping motor.

Compared with the prior art, the present invention has the following beneficial effects:

The present invention aims to solve the problems of slow speed of existing mechanical rotation compensators, unadjustable fast axis direction of phase modulators, and complex generalized ellipsometric measurement systems, and finally realize a new type of microsecond fast axis adjustable photoelastic modulation type ultra-high-speed generalized ellipsometric measurement, providing theoretical and technical support for complex and fast real-time in-situ detection. The ellipsometric measurement method adopted by the present invention has the advantages of single measurement, high measurement accuracy, simple calibration, and wide spectral range. The measuring device proposed in the present invention can increase the mechanical rotation speed by 3-4 orders of magnitude, and the 45° dual-drive fast axis adjustable circular photoelastic modulator adopted has high-quality polarization modulation performance such as wide spectral range, fast modulation speed, and high stability. The present invention can be used for high-precision real-time online detection of production lines such as microelectronics, optical coatings, flat panel displays, and photovoltaic solar cells, and can also be used for the measurement of physical and biological transient mechanism change processes in high-tech fields such as biological sciences and material characterization.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the implementation methods of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for the implementation methods or the description of the prior art. Obviously, the drawings in the following description are only exemplary, and for ordinary technicians in this field, other implementation drawings can be derived from the provided drawings without creative work.

The structures, proportions, sizes, etc. illustrated in this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with the technology. They are not used to limit the conditions under which the present invention can be implemented, and therefore have no substantial technical significance. Any structural modification, change in proportion or adjustment of size shall still fall within the scope of the technical contents disclosed in the present invention without affecting the effects and purposes that can be achieved by the present invention.

FIG1 is a schematic diagram of the structure of the present invention in a transmission state;

FIG2 is a schematic diagram of the structure of the present invention in a reflection state;

FIG. 3 is a schematic structural diagram of a fast-axis adjustable circular elastic light modulator according to the present invention.

Among them: 1 is the polarizing arm, 1-1 is the light source, 1-2 is the polarizer, 1-3 is the first fast-axis adjustable circular elastic modulator, 2 is the analyzer arm, 2-1 is the detector, 2-2 is the analyzer, 2-3 is the second fast-axis adjustable circular elastic modulator, 3 is the sample stage, 4 is the light-transmitting crystal, 5-1 is the first piezoelectric driver, and 5-2 is the first piezoelectric driver.

DETAILED DESCRIPTION

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. These descriptions are only to further illustrate the features and advantages of the present invention, rather than to limit the claims of the present invention. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

Embodiment 1

The overall structure of the device of the present invention is shown in Figures 1 and 2, which are respectively transmission and reflection devices for ellipsometric measurement. The structure is mainly composed of three parts: a polarizing arm 1, an analyzing arm 2 and a sample stage 3. The polarizing arm 1 includes a light source 1-1, a polarizer 1-2, and a first fast-axis adjustable circular elastic light modulator 1-3. The analyzing arm 2 includes a detector 2-1, an analyzer 2-2, and a second fast-axis adjustable circular elastic light modulator 2-3. The sample stage 3 at the middle position is a sample placement area for placing the film and nanostructure to be tested. In this device, the light beam emitted by the light source 1-1 passes through the various optical elements in the order of the polarizer 1-2 to the first fast-axis adjustable circular elastic light modulator 1-3 to the sample stage 3 to the second fast-axis adjustable circular elastic light modulator 2-3 to the analyzer 2-2, and is finally received by the detector 2-1 and data processing is performed, thereby obtaining the information of the sample to be tested.

The fast axis direction of the traditional two-dimensional elastic light modulator cannot be adjusted, and the elastic light crystal adopts an octagonal structure; however, in the present invention, the fast axis direction of the elastic light modulator needs to be modulated at high speed. Since the circular structure has better symmetry than the octagonal structure, the circular structure is helpful for adjusting the fast axis direction. The structure of the 45° dual-driven first fast-axis adjustable circular elastic light modulator 1-3 and the second fast-axis adjustable circular elastic light modulator 2-3 used in the present invention is shown in Figure 3, and mainly includes a light-transmitting crystal 4 and two first piezoelectric drivers 5-1 and second piezoelectric drivers 5-2 separated by 45° in space angle. When the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 of the first fast-axis adjustable circular elastic light modulator 1-3 and the second fast-axis adjustable circular elastic light modulator 2-3 apply a sinusoidal AC driving voltage consistent with the resonant frequency of the elastic light modulator, the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 perform length expansion and contraction vibrations, and drive the light-transmitting crystal 4 to vibrate to achieve resonance. When the elastic light modulator 1-3/2-3 resonates, a stress standing wave is formed in the transparent crystal 4, and its phase and fast axis direction are changed due to the elastic light effect. The piezoelectric driver 5-1 introduces a piezoelectric driver 5-2 with the same working frequency as the first piezoelectric driver 5-1 at the node position where the stress standing wave is formed in the transparent crystal 4, that is, at a spatial position 45° away from the piezoelectric driver 5-1, so that the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 are symmetrically distributed on the transparent crystal 4, forming a first fast-axis adjustable circular elastic light modulator 1-3 and a second fast-axis adjustable circular elastic light modulator 2-3 structure composed of the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 spatially distributed at 45°. In this way, the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 can be connected to each other at the node position where they drive the transparent crystal 4 to work, and the interference of the stress standing waves in each other's transparent crystal 4 is minimized, thereby achieving stable modulation work.

In order to achieve different angles and transmission/reflection measurement requirements, the detection arm 2 and the sample stage 3 can rotate. The fast axes of the first fast-axis adjustable circular photoelastic modulator 1-3 and the second fast-axis adjustable circular photoelastic modulator 2-3 in the polarizing arm 1 and the analyzing arm 2 rotate continuously at a constant speed ratio, and two working modes of pure standing wave and pure traveling wave can be realized: in the pure standing wave working mode, the fast axis direction of the photoelastic modulation is fixed when the driving voltage amplitude and phase are fixed, but the fast axis direction can be adjusted in any direction through the driving amplitude and phase; in the pure traveling wave working mode, high-speed modulation (tens of kHz) in the fast axis direction can be achieved, and arbitrary phase delay modulation can be achieved through driving voltage adjustment.

Embodiment 2

The device of the present invention is used to measure information such as film thickness and optical constants. The specific implementation is as follows:

The main structure of the device of the present invention includes a polarizing arm 1, an analyzing arm 2, and a sample stage 3. The polarizing arm 1 is mainly used to modulate the polarization state of incident light of different wavelengths after passing through a monochromator, wherein the light source 1-1 selects a polychromatic light source and a monochromator with a wide spectral range of 193nm-3200nm. The analyzing arm 2 is mainly used to detect and analyze the polarization state of light passing through the sample after polarization state modulation of different wavelengths, wherein the detector 2-1 can realize wide spectrum detection by dividing into three sections: ultraviolet high-speed photomultiplier tubes are used in the ultraviolet band, silicon-based high-speed photodetectors are used in the visible near-infrared band, and InAsSb photodetectors are used in the near-infrared and short-wave infrared bands.

The structures of the first fast-axis adjustable circular elastic modulator 1-3 and the second fast-axis adjustable circular elastic modulator 2-3 are shown in FIG3 . The transparent crystal 4 is made of fused quartz, and its optimal transparent range is 185nm-3500nm, which can cover the spectral range. The first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 are selected from piezoelectric α-quartz crystals, which have the characteristics of very narrow frequency band, high purity, single vibration mode of specific cut type, and thermal effect can be effectively reduced by cutting type selection. When the voltage V=V ₀ sin2πft is applied to the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 (V ₀ is the driving voltage amplitude, and f is the piezoelectric driving frequency), the stress introduced by the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2 in the transparent crystal 4 satisfies the standing wave solution, so the stress standing wave introduced by the drivers 5-1 and 5-2 can be decomposed into two traveling waves superimposed in the clockwise and counterclockwise directions. In the pure traveling wave mode, the first fast-axis adjustable circular light-elastic modulator 1-3 and the second fast-axis adjustable circular light-elastic modulator 2-3 can realize polarization modulation of the fast-axis azimuth in circular motion, and the rotation direction is determined by the phase difference between the two drives. Among them, the phase delay amount is a constant and is proportional to the driving voltage amplitude. Therefore, in the pure traveling wave mode, the first fast-axis adjustable circular light-elastic modulator 1-3 and the second fast-axis adjustable circular light-elastic modulator 2-3 realize polarization modulation similar to the rotation compensator, but in this polarization modulation mode, there is no mechanical rotation, the fast-axis direction modulation frequency is much higher than the mechanical rotation frequency, and the phase delay amount can be flexibly adjusted by the driving voltage amplitude applied to the first piezoelectric driver 5-1 and the second piezoelectric driver 5-2.

The entire device system needs to be controlled in a coordinated manner. The order of the light beam emitted by the light source 1-1 passing through each optical element is polarizer 1-2 to fast-axis adjustable circular elastic light modulator 1-3 to sample stage 3 to fast-axis adjustable circular elastic light modulator 2-3 to analyzer 2-2, and finally received by detector 2-1. The measured data is processed to obtain information such as the measured film thickness and optical parameters. If the Stokes vector is used to describe the polarized light beam, and the Mueller matrix is used to describe the optical element and the measured film and micro-nano structure, the Stokes vector S _out of the light beam leaving the analyzer 2-2 can be expressed as the multiplication of the Mueller matrix:

Wherein, _MP , _MPEM1 , _MS , _MPEM2 and _MA respectively represent the Mueller matrices of the polarizer 1-2, the first fast-axis adjustable circular elastic light modulator 1-3, the sample, the second fast-axis adjustable circular elastic light modulator 2-3 and the analyzer 2-2, _δ1 and _δ2 respectively represent the phase delay of the first fast-axis adjustable circular elastic light modulator 1-3 and the second fast-axis adjustable circular elastic light modulator 2-3. Since the optical axis directions of each optical element are different, the Mueller rotation matrix R(θ) is used in equation (1) to unify them into the reference system where the incident surface is located, and the angle θ=P, A, PEM1, PEM2 respectively correspond to the optical axis azimuth angles of the polarizer 1-2, the analyzer 2-2, the first fast-axis adjustable circular elastic light modulator 1-3 and the second fast-axis adjustable circular elastic light modulator 2-3.

The first fast-axis adjustable circular light elastic modulator 1-3 and the second fast-axis adjustable circular light elastic modulator 2-3 rotate continuously at a constant speed ratio f ₁ :f ₂ =pf ₀ :qf ₀ , where f ₀ is the base frequency (f ₀ =20kHz). The optical axis azimuth of the first fast-axis adjustable circular light elastic modulator 1-3 can be expressed as The azimuth angle of the optical axis of the second fast-axis adjustable circular elastic light modulator 2-3 can be expressed as in and They represent the initial fast axis azimuths of the fast axis adjustable circular light elastic modulators 1-3 and 2-3 respectively. The rotation speed ratio of the first fast axis adjustable circular light elastic modulator 1-3 and the second fast axis adjustable circular light elastic modulator 2-3 is pf ₀ :qf ₀ =5:3.

Generally speaking, the light incident on the polarizer 1-2 is non-polarized light, and its Stokes vector can be expressed as S _in =(I ₀ ,0,0,0) ^T , where T represents the transpose of the matrix. The Stokes vector of the light beam exiting the analyzer 2-2 is S _out =(I,Q,U,V) ^T . Since the detector 2-1 can only detect the intensity information of the light beam, that is, the first term I of the Stokes vector, equation (1) can be rearranged and expanded to obtain the first term expression of the Stokes vector S _{out of} the light beam exiting the analyzer 2-2:

in,

in, m _jk (j＝1,...,4；k＝1,...,4) is the Mueller matrix element of the film or nanostructure under test. The light intensity signal collected by the detector 2-1 is subjected to Fourier analysis. Combined with the above analysis, the 16 elements m _ij in the Mueller matrix Ms of the film or nanostructure under test are obtained by phase-locking different 2nf ₀ systems. After further processing, the film thickness, optical parameters and other information under test can be obtained.

In order to achieve multi-angle and transflective film thickness measurement, it is necessary to rotate the analyzer arm 2 and the sample stage 3 to achieve measurement. The rotation adopts the rotating stage plus stepper motor method. The drive control of the stepper motor is the core of the sample scanning control. The control circuit outputs an electrical pulse signal to drive the stepper motor to complete the specified speed and direction control. Based on the FPGA output motor drive control source signal, the drive controller amplifies and subdivides it to drive the stepper motor to work, thereby realizing precise control of each turntable.

The AC high voltage signal applied by the first fast-axis adjustable circular elastic light modulator 1-3 and the second fast-axis adjustable circular elastic light modulator 2-3 is a square wave AC source signal required for the elastic light modulation work generated by the FPGA, which is output to the capacitor-inductor (LC) resonant circuit for amplification and then drives the elastic light modulation work. By adjusting the frequency, phase and duty cycle of the square wave AC source signal through the FPGA, the frequency, phase and amplitude of the AC high voltage driving signal of the elastic light modulator can be adjusted respectively, thereby realizing the control of the modulation frequency and phase delay of the fast-axis adjustable elastic light modulator.

In addition, the fast-axis adjustable circular photoelastic modulator 1-3/2-3 in the present invention can realize polarization modulation in a wide spectral range, the fused quartz photoelastic modulator can realize polarization modulation from ultraviolet to short-wave infrared, and the zinc selenide photoelastic modulator can realize polarization modulation from visible to mid- and far-infrared; the fast-axis modulation frequency can be increased by 3-4 orders of magnitude compared with mechanical rotation, thereby realizing microsecond-level fast-axis adjustable photoelastic modulation ultra-high-speed generalized ellipsometric measurement.

Only the preferred embodiments of the present invention are described in detail above, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge scope of ordinary technicians in this field without departing from the purpose of the present invention, and various changes should be included in the protection scope of the present invention.

Claims (6)

1. The utility model provides a microsecond level fast axis adjustable elasto-optical modulation superspeed generalized ellipsometry measuring device which characterized in that: the device comprises a polarizing arm (1), a polarization-detecting arm (2) and a sample table (3), wherein the polarization-detecting arm (2) and the sample table (3) are sequentially arranged in the light path direction of the polarizing arm (1); the light source (1-1) comprises a light source (1-1), a polarizer (1-2) and a first fast axis adjustable circular light-emitting modulator (1-3), wherein the polarizer (1-2) and the first fast axis adjustable circular light-emitting modulator (1-3) are sequentially arranged in the light path direction of the light source (1-1), and a sample table (3) is arranged in the light path direction of the first fast axis adjustable circular light-emitting modulator (1-3); the polarization analyzer comprises a polarization analyzer (2), a polarization analyzer (2-1) and a second fast axis adjustable circular elastic-optical modulator (2-3), wherein the polarization analyzer (2-2) and the detector (2-1) are sequentially arranged in the optical path direction of the second fast axis adjustable circular elastic-optical modulator (2-3), and the second fast axis adjustable circular elastic-optical modulator (2-3) is arranged in the optical path direction of a sample table (3); the first fast axis adjustable circular elastic light modulator (1-3) and the second fast axis adjustable circular elastic light modulator (2-3) comprise light passing crystals (4), a first piezoelectric driver (5-1) and a second piezoelectric driver (5-2), and the light passing crystals (4) are respectively connected with the first piezoelectric driver (5-1) and the second piezoelectric driver (5-2); the detector (2-1) comprises an ultraviolet high-speed photomultiplier, a silicon-based high-speed photoelectric detector and an InAsSb photoelectric detector, wherein the ultraviolet high-speed photomultiplier detects ultraviolet bands, the silicon-based high-speed photoelectric detector detects visible near infrared bands, and the InAsSb photoelectric detector detects near infrared short wave infrared bands; the first piezoelectric driver (5-1) and the second piezoelectric driver (5-2) are arranged at the node positions of the light-transmitting crystal (4) for forming stress standing waves, and the working frequencies of the first piezoelectric driver (5-1) and the second piezoelectric driver (5-2) are consistent.

2. The microsecond-level fast axis adjustable elasto-optical modulation ultra-high-speed generalized ellipsometry measurement device according to claim 1, wherein the device is characterized in that: the light passing crystal (4) adopts a circular structure, the light passing crystal (4) adopts fused quartz, and the light passing range of the light passing crystal (4) is 185nm-3500nm.

3. The microsecond-level fast axis adjustable elasto-optical modulation ultra-high-speed generalized ellipsometry measurement device according to claim 1, wherein the device is characterized in that: the included angle between the first piezoelectric driver (5-1) and the second piezoelectric driver (5-2) is 45 degrees.

4. The microsecond-level fast axis adjustable elasto-optical modulation ultra-high-speed generalized ellipsometry measurement device according to claim 1, wherein the device is characterized in that: the light source (1-1) adopts a multi-color light source with a spectrum range of 193nm-3200nm and a monochromator.

5. The microsecond-level fast axis adjustable elasto-optical modulation ultra-high-speed generalized ellipsometry measurement device according to claim 1, wherein the device is characterized in that: the first piezoelectric driver (5-1) and the second piezoelectric driver (5-2) are both piezoelectric alpha-quartz crystals.

6. The microsecond-level fast axis adjustable elasto-optical modulation ultra-high-speed generalized ellipsometry measurement device according to claim 1, wherein the device is characterized in that: the bottoms of the analyzer arm (2) and the sample table (3) are respectively fixed with a rotary table, and each rotary table is connected with a stepping motor.