CN114608482B - Curvature measuring method, system, readable storage medium and computer device - Google Patents
Curvature measuring method, system, readable storage medium and computer device Download PDFInfo
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- G—PHYSICS
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
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Abstract
The invention provides a curvature measuring method, a curvature measuring system, a readable storage medium and computer equipment, wherein the method comprises the following steps: irradiating the preset irradiation position of the wafer to be detected along the preset direction through a laser emitter, controlling the wafer to be detected to rotate, acquiring offset data of the whole circle of the wafer to be detected, and calculating the surface inclination according to the offset data; processing the two standard calibration sheets according to the steps to obtain offset data of the two standard calibration sheets, and calculating corresponding base values and calibration coefficients according to the offset data; and calculating the curvature value of the wafer to be measured according to the base value, the calibration coefficient and the surface inclination. The method comprises the steps of irradiating the wafer to be detected in a rotating or autorotation state through the laser transmitter to obtain offset data of a whole circle, calculating corresponding surface inclination, obtaining a base value and a standard coefficient by utilizing the two standard calibration sheets, calculating a curvature value of the wafer to be detected by utilizing the surface inclination, the two base values and the standard coefficient, and saving calculation cost.
Description
Technical Field
The invention relates to the technical field of semiconductor measurement, in particular to a curvature measurement method, a curvature measurement system, a readable storage medium and computer equipment.
Background
With the rapid development of the semiconductor industry and the improvement of the living standard of people, semiconductor materials become an indispensable part of the life of people.
Metal Organic Chemical Vapor Deposition (MOCVD) equipment is the primary production equipment for producing LEDs and compound semiconductors. The yield and quality of LED products are related to the curvature of the wafer.
In the prior art, curvature measurement of a wafer is usually performed by placing the wafer in a planetary tray of an MOCVD apparatus, and rotating the wafer by driving the planetary tray, which is affected by rotation speed of the planetary tray, environment, flatness of the surface of the wafer, interference of gas flow inside a cavity on laser, reflection of viewport light, and vibration during operation of the apparatus, so that accuracy of measurement data is reduced.
Disclosure of Invention
In view of the above, it is an object of the present invention to provide a curvature measuring method, system, readable storage medium and computer device to solve at least the above-mentioned deficiencies in the art.
The invention provides a curvature measuring method, which comprises the following steps:
the method comprises the following steps: irradiating a preset irradiation position of a wafer to be detected along a preset direction through a laser emitter, controlling the wafer to be detected to rotate within a preset speed range, performing data sampling on light spot information reflected by the wafer to be detected at a first preset sampling frequency according to a position sensor to obtain offset data of the wafer to be detected in a whole circle under the same radius, and calculating the surface inclination of the wafer to be detected according to the offset data of the wafer to be detected;
step two: acquiring a first standard calibration sheet and a second standard calibration sheet, irradiating a preset irradiation position of the first standard calibration sheet along the preset direction through the laser transmitter, controlling the first standard calibration sheet to rotate within the preset speed range, and performing data sampling on light spot information reflected by the first standard calibration sheet at the first preset sampling frequency according to the position sensor to obtain offset data of the first standard calibration sheet in a whole circle under the same radius,
Irradiating the laser transmitter on a preset irradiation position of the second standard calibration sheet along the preset direction, controlling the second standard calibration sheet to rotate in the preset speed range, performing data sampling on spot information reflected by the second standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data of the second standard calibration sheet in a whole circle under the same radius, and calculating a base value of the first standard calibration sheet, a base value of the second standard calibration sheet and calibration coefficients of the two standard calibration sheets according to the offset data of the first standard calibration sheet and the offset data of the second standard calibration sheet;
step three: and calculating the curvature value of the wafer to be measured according to the base value of the first standard calibration sheet, the base value of the second standard calibration sheet, the calibration coefficients of the two standard calibration sheets and the surface inclination of the wafer to be measured.
Further, in the second step, the step of calculating the base value of the first standard calibration piece, the base value of the second standard calibration piece, and the calibration coefficients of the two standard calibration pieces according to the offset data of the first standard calibration piece and the offset data of the second standard calibration piece includes:
calculating the base value of the first standard calibration sheet and the base value of the second standard calibration sheet according to the offset data of the first standard calibration sheet and the offset data of the second standard calibration sheet;
and obtaining the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece, and calculating the calibration coefficients of the two standard calibration pieces according to the base value of the first standard calibration piece, the base value of the second standard calibration piece, the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece.
Further, the calculation formula of the surface tilt amount of the wafer to be measured is as follows:
in the formula (I), the compound is shown in the specification,
is the X-direction surface inclination amount of the wafer to be measured, X is the X-direction offset data of the wafer to be measured,
the method comprises the steps of obtaining a Y-direction surface inclination amount of a wafer to be measured, obtaining Y-direction offset data of the wafer to be measured, obtaining sum of a normalization coefficient of a position sensor, obtaining xDark preset X-direction standard offset data, obtaining yDark preset Y-direction standard offset data, and obtaining sumDark preset normalization coefficient.
Further, the expression of the base value of the first standard calibration sheet is as follows:
A = sqrt ( pow(x 1 ， 2) + pow(y 1 ，2) )；
wherein A represents a base value of the first calibration standard, x 1 X-direction offset data, y, representing a first calibration standard 1 Y-direction offset data representing a first standard calibration patch, sqrt representing an open square root function, pow representing a power function;
the expression of the base value of the second standard calibration sheet is as follows:
B = sqrt ( pow(x 2 ，2) + pow(y 2 ， 2) )；
wherein B represents a base value of the second calibration standard, x 2 X-direction offset data, y, representing a second calibration standard 2 Y-direction offset data representing a second standard calibration patch.
Further, the expression of the calibration coefficients of the two standard calibration sheets is as follows:
Ratio = (A - B)/(TargetA - TargetB)；
in the formula, Ratio represents the calibration coefficients of the two standard calibration patches, TargetA represents the curvature value of the first standard calibration patch, and TargetB represents the curvature value of the second standard calibration patch.
Further, the formula for calculating the curvature value of the wafer to be measured is as follows:
curvature = Ratio * (N-r0)；
N =sqrt ( pow(
，2) + pow(
，2) )；
r0 = A - Ratio * TargetA；
in the formula, curve value of the wafer to be measured is represented by curve, r0 represents base value of the theoretical flat wafer, and N represents base value of the wafer to be measured.
The invention also provides a curvature measuring system, comprising:
the sampling module is used for irradiating a preset irradiation position of a wafer to be detected along a preset direction through a laser transmitter, controlling the wafer to be detected to rotate within a preset speed range, performing data sampling on light spot information reflected by the wafer to be detected at a first preset sampling frequency according to a position sensor to obtain offset data of the wafer to be detected in a whole circle under the same radius, and calculating the surface inclination of the wafer to be detected according to the offset data of the wafer to be detected;
the control module is used for acquiring a first standard calibration sheet and a second standard calibration sheet, irradiating the preset irradiation position of the first standard calibration sheet along the preset direction through the laser transmitter, controlling the first standard calibration sheet to rotate within the preset speed range, and performing data sampling on light spot information reflected by the first standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data, offset data and the like of the first standard calibration sheet in a whole circle under the same radius,
Irradiating the laser transmitter on a preset irradiation position of the second standard calibration sheet along the preset direction, controlling the second standard calibration sheet to rotate in the preset speed range, performing data sampling on spot information reflected by the second standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data of the second standard calibration sheet in a whole circle under the same radius, and calculating a base value of the first standard calibration sheet, a base value of the second standard calibration sheet and calibration coefficients of the two standard calibration sheets according to the offset data of the first standard calibration sheet and the offset data of the second standard calibration sheet;
and the calculation module is used for calculating the curvature value of the wafer to be measured according to the base value of the first standard calibration sheet, the base value of the second standard calibration sheet, the calibration coefficients of the two standard calibration sheets and the surface inclination of the wafer to be measured.
Further, the control module includes:
an execution unit, configured to calculate a base value of the first standard calibration piece and a base value of the second standard calibration piece according to the offset data of the first standard calibration piece and the offset data of the second standard calibration piece;
and the calculating unit is used for acquiring the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece, and calculating the calibration coefficients of the two standard calibration pieces according to the base value of the first standard calibration piece, the base value of the second standard calibration piece, the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece.
The invention also proposes a readable storage medium on which a computer program is stored which, when being executed by a processor, implements the curvature measurement method described above.
The invention also proposes a computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the curvature measurement method described above when executing the computer program.
The curvature measuring method, the curvature measuring system, the readable storage medium and the computer equipment irradiate a preset irradiation position of a wafer to be measured along a preset direction through a laser transmitter, perform data sampling in a self-rotating mode of the wafer to be measured to obtain offset data of the whole circle of the wafer to be measured under the same radius, further calculate and obtain the surface inclination of the wafer to be measured through the offset data, obtain corresponding base values and standard coefficients by using two standard calibration sheets, calculate the curvature value of the wafer to be measured by using the surface inclination, the two base values and the standard coefficients, avoid the factors of a planetary tray during the curvature measurement of the wafer, save the calculation cost and enable the curvature change in the process of on-line calculation of the long film of the wafer in the process production.
Drawings
FIG. 1 is a flow chart of a curvature measurement method in a first embodiment of the invention;
FIG. 2 is a schematic diagram of a curvature measuring method according to a first embodiment of the present invention;
FIG. 3 is a block diagram of a curvature measuring system according to a second embodiment of the present invention;
fig. 4 is a block diagram showing a configuration of a computer device according to a third embodiment of the present invention.
Description of the main element symbols:
| |
10 | |
11 |
| Processor with a memory having a plurality of |
20 | Control module | 12 |
| |
30 | |
13 |
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Several embodiments of the invention are presented in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "left", "right", "horizontal" and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example one
Referring to fig. 1, a curvature measuring method according to a first embodiment of the present invention is shown, and the method specifically includes steps S101 to S103:
s101, irradiating a preset irradiation position of a wafer to be detected along a preset direction through a laser emitter, controlling the wafer to be detected to rotate within a preset speed range, performing data sampling on light spot information reflected by the wafer to be detected at a first preset sampling frequency according to a position sensor to obtain offset data of the wafer to be detected in a whole circle under the same radius, and calculating the surface inclination of the wafer to be detected according to the offset data of the wafer to be detected;
it should be noted that, in this embodiment, the need arisesA process equipment adopting ViperRTC4.5 MOCVD and a standard calibration sheet A, B with known curvature, wherein the two dimensions of the standard calibration sheet A, B are selected according to the cavity design and the tray requirement of the process equipment (4inch, 6inch and 8inch), the embodiment adopts a standard calibration sheet of 6inch, a concave sheet is selected for the A standard calibration sheet, and a convex sheet is selected for the B standard calibration sheet, wherein the curvature value of the A standard calibration sheet is less than-50 Km -1 The curvature value of the B standard calibration sheet is less than 50Km -1 Design standard error value of standard calibration sheet + -5 Km -1 The A standard calibration piece is used as a first standard calibration piece, and the B standard calibration piece is used as a second standard calibration piece.
In the implementation, as shown in fig. 2, the method uses laser to irradiate the surface of the wafer of the rotation system, continuously collects the position information of the reflected light spot, calculates the target curvature value, obtaining system offset values (xDARK, yDark) of the MOCVD process equipment and a normalization coefficient (sumDark) preset by a system according to a Position Sensor (PSD) feedback value, installing a laser emitter at a preset position of MOCVD process equipment, placing a wafer to be tested on a self-rotating carrier disc in a cavity of the MOCVD process equipment, utilizing the laser emitter along a preset direction, for example, the laser beam is vertically injected into a cavity of the MOCVD processing equipment, the laser beam irradiates the preset irradiation position on the surface of the wafer to be measured and is reflected back to the inside of the laser emitter, the position of the reflected light spot is received by a Position Sensor (PSD) arranged inside the laser emitter, and calculating the offset of the wafer to be detected and a normalization coefficient sum of the position sensor for data conversion according to the position of the light spot.
It should be noted that, in this embodiment, the placement position of the laser emitter is selected by a user or an engineer, data such as the mounting distance, the mounting radius, and the like are parameterized and calibrated, usually, the position selects a center of a circle of a wafer and R/2 of the radius of the wafer, and the preset irradiation position is 225mm away from the wafer to be measured, and the measurement radius is 82 mm.
In specific implementation, the rotation type carrier disc of the MOCVD process equipment rotates at a preset speed (usually 200 to 1200rpm, in this embodiment, the rotation speed is 1000 rpm), so as to drive the wafer to be detected to rotate, meanwhile, the laser emitter irradiates the preset irradiation position of the wafer to be detected at the same installation position along the preset direction, and performs data sampling on the spot information reflected by the wafer to be detected at a first preset sampling frequency (50 KHz in this embodiment) according to the position sensor, so as to obtain offset data of the wafer to be detected in a whole circle under the same radius, and according to the offset data of the wafer to be detected, the surface inclination of the wafer to be detected is calculated by using the following formula:
in the formula (I), the compound is shown in the specification,
is the X-direction surface inclination amount of the wafer to be measured, X is the X-direction offset data of the wafer to be measured,
the method comprises the steps of obtaining a Y-direction surface inclination amount of a wafer to be detected, obtaining Y-direction offset data of the wafer to be detected, obtaining sum of a normalization coefficient of a position sensor, obtaining xDark preset X-direction standard offset data, obtaining yDark preset Y-direction standard offset data, obtaining sumDark preset normalization coefficient, and obtaining a coefficient for converting position sensing into millimeters by 4.5.
S102, a first standard calibration sheet and a second standard calibration sheet are obtained, the first standard calibration sheet is irradiated on a preset irradiation position of the first standard calibration sheet along the preset direction through the laser emitter, the first standard calibration sheet is controlled to rotate within the preset speed range, data sampling is carried out on light spot information reflected by the first standard calibration sheet according to the position sensor at the first preset sampling frequency, and offset data, a data set and a data set of the first standard calibration sheet are obtained in a whole circle under the same radius,
Irradiating the laser transmitter on a preset irradiation position of the second standard calibration sheet along the preset direction, controlling the second standard calibration sheet to rotate in the preset speed range, performing data sampling on spot information reflected by the second standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data of the second standard calibration sheet in a whole circle under the same radius, and calculating a base value of the first standard calibration sheet, a base value of the second standard calibration sheet and calibration coefficients of the two standard calibration sheets according to the offset data of the first standard calibration sheet and the offset data of the second standard calibration sheet;
the calibration coefficients of the two standard calibration pieces refer to the calibration coefficients of the first and second standard calibration pieces, that is, a common calibration coefficient of the a standard calibration piece and the B standard calibration piece.
In specific implementation, the laser emitter irradiates on a preset irradiation position of the A standard calibration sheet along the preset direction, the A standard calibration sheet is controlled to rotate at a rotation speed of 1000rpm, and data sampling is performed on spot information reflected by the A standard calibration sheet at a sampling frequency of 50KHz according to the position sensor to obtain offset data of the A standard calibration sheet in a whole circle under the same radius, wherein the X-direction offset data of the A standard calibration sheet is X 1 And Y-direction offset data is Y 1 ；
Further, the laser emitter irradiates on a preset irradiation position of the B standard calibration sheet along the preset direction, the B standard calibration sheet is controlled to rotate at a rotation speed of 1000rpm, data sampling is carried out on spot information reflected by the B standard calibration sheet at a sampling frequency of 50KHz according to the position sensor, so that offset data of the B standard calibration sheet in a whole circle under the same radius is obtained, wherein X-direction offset data of the B standard calibration sheet is X 2 And Y-direction offset data is Y 2 ；
It should be noted that, the placement position of the laser emitter is unchanged, the predetermined direction is vertical incidence, the preset irradiation position of the a standard calibration sheet is 225mm away from the a standard calibration sheet, and the measurement radius is 82mm, and the preset irradiation position of the B standard calibration sheet is 225mm away from the B standard calibration sheet, and the measurement radius is 82 mm.
X-direction offset data X of calibration sheet according to A standard 1 Y-direction offset data Y 1 And X-direction offset data X of B standard calibration sheet 2 Y-direction offset data Y 2 Calculating the base value of the A standard calibration sheet and the base value of the B standard calibration sheet according to the following formulas:
the expression for the base value of the a standard calibration piece is:
A = sqrt ( pow(x 1 ， 2) + pow(y 1 ，2) )；
wherein A represents the base value of A standard calibration sheet, sqrt represents the open square root function, pow represents the power function;
the expression of the base value of the B standard calibration piece is:
B = sqrt ( pow(x 2 ，2) + pow(y 2 ， 2) )；
in the formula, B represents the base value of the B standard calibration piece.
Calculating the calibration coefficients of the two standard calibration sheets according to the obtained base value of the A standard calibration sheet and the base value of the B standard calibration sheet and the curvature value of the A standard calibration sheet and the curvature value of the B standard calibration sheet, namely the calibration coefficients of the A standard calibration sheet and the B standard calibration sheet:
Ratio = (A - B)/(TargetA - TargetB)；
in the formula, Ratio represents the calibration coefficients of two standard calibration patches, TargetA represents the curvature value of the a calibration patch, and TargetB represents the curvature value of the B calibration patch.
S103, calculating to obtain the curvature value of the wafer to be measured according to the base value of the first standard calibration sheet, the base value of the second standard calibration sheet, the calibration coefficients of the two standard calibration sheets and the surface inclination of the wafer to be measured.
In specific implementation, the curvature value of the wafer to be measured is calculated according to the following formula by using the obtained base value of the standard calibration sheet A, the base value of the standard calibration sheet B, the calibration coefficients of the two standard calibration sheets and the surface inclination of the wafer to be measured:
curvature = Ratio * (N-r0)；
N =sqrt ( pow(
，2) + pow(
，2) )；
r0 = A - Ratio * TargetA；
in the formula, curve value of the wafer to be measured is represented by curve, r0 represents base value of the theoretical flat wafer, and N represents base value of the wafer to be measured. It should be noted that the curvature value of the theoretical flat wafer is 0Km -1 。
The following are experimental procedures of the curvature measuring method in this embodiment:
(1) equipment selection and laser emitter installation:
selecting ViperRTC4.5, a target cavity S1 machine single-chip autorotation system and a process Si substrate;
probe (laser emitter) mounting position: 225mm from the wafer, measuring a radius of 82 mm.
(2) Calibration patch selection
Calibration piece A = -100km -1 ；
Calibration patch B = 60km -1 ；
The process adopts Si (initial curvature is close to 0)
(3) Wafer curvature measurement under test
Calculating according to the steps, and transmitting the calibration sheet A to obtain an inclination base value of-1.839286; transmitting a calibration sheet B to obtain an inclination base value of 1.669557; ratio =45.599077 and r0=0.3437408 can be obtained through calculation, the warp degree of the wafer is continuously changed in the process stage through real-time monitoring data after the system runs, and the variation quantity of the wafer can be monitored in real time through the system, so that reliable curvature data can be provided for engineers.
In summary, in the curvature measuring method in the above embodiment of the invention, the laser emitter irradiates the preset irradiation position of the wafer to be measured along the predetermined direction, and performs data sampling in a self-rotation manner on the wafer to be measured, so as to obtain offset data of the wafer to be measured in a whole circle at the same radius, and further obtain the surface tilt of the wafer to be measured through the offset data calculation, obtain the corresponding base value and standard coefficient by using the two standard calibration sheets, and calculate the curvature value of the wafer to be measured by using the surface tilt, the two base values and the standard coefficient, thereby avoiding the factor of a planetary tray when measuring the curvature of the wafer, saving the calculation cost, and enabling the curvature change in the wafer long film process to be calculated on line in the process of production.
Example two
Referring to fig. 3, a curvature measurement system according to a second embodiment of the present invention is shown, the system including:
the sampling module 11 is configured to irradiate a preset irradiation position of a wafer to be detected in a preset direction through a laser emitter, control the wafer to be detected to rotate within a preset speed range, perform data sampling on light spot information reflected by the wafer to be detected at a first preset sampling frequency according to a position sensor, so as to obtain offset data of the wafer to be detected in a whole circle under the same radius, and calculate a surface inclination amount of the wafer to be detected according to the offset data of the wafer to be detected;
a control module 12, configured to obtain a first standard calibration sheet and a second standard calibration sheet, irradiate a preset irradiation position of the first standard calibration sheet along the preset direction through the laser emitter, control the first standard calibration sheet to rotate at the preset speed range, and perform data sampling on spot information reflected by the first standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data of the first standard calibration sheet in a whole circle under the same radius,
Irradiating the laser transmitter on a preset irradiation position of the second standard calibration sheet along the preset direction, controlling the second standard calibration sheet to rotate in the preset speed range, performing data sampling on spot information reflected by the second standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data of the second standard calibration sheet in a whole circle under the same radius, and calculating a base value of the first standard calibration sheet, a base value of the second standard calibration sheet and calibration coefficients of the two standard calibration sheets according to the offset data of the first standard calibration sheet and the offset data of the second standard calibration sheet;
further, the control module 12 includes:
an execution unit, configured to calculate a base value of the first standard calibration piece and a base value of the second standard calibration piece according to the offset data of the first standard calibration piece and the offset data of the second standard calibration piece;
and the calculating unit is used for acquiring the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece, and calculating the calibration coefficients of the two standard calibration pieces according to the base value of the first standard calibration piece, the base value of the second standard calibration piece, the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece.
And the calculating module 13 is configured to calculate a curvature value of the wafer to be measured according to the base value of the first standard calibration sheet, the base value of the second standard calibration sheet, the calibration coefficients of the two standard calibration sheets, and the surface tilt amount of the wafer to be measured.
The functions or operation steps of the modules and units when executed are substantially the same as those of the method embodiments, and are not described herein again.
The curvature measuring system provided by the embodiment of the invention has the same implementation principle and technical effect as the foregoing method embodiments, and for the sake of brief description, no mention is made to the system embodiments, and reference may be made to the corresponding contents in the foregoing method embodiments.
EXAMPLE III
Referring to fig. 4, a computer device according to a third embodiment of the present invention is shown, which includes a memory 10, a processor 20, and a computer program 30 stored in the memory 10 and executable on the processor 20, wherein the processor 20 implements the curvature measuring method when executing the computer program 30.
The memory 10 includes at least one type of readable storage medium including a flash memory, a hard disk, a multimedia card, a card type memory (e.g., SD or DX memory, etc.), a magnetic memory, a magnetic disk, an optical disk, and the like. The memory 10 may in some embodiments be an internal storage unit of the computer device, for example a hard disk of the computer device. The memory 10 may also be an external storage device in other embodiments, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like. Further, the memory 10 may also include both an internal storage unit and an external storage device of the computer apparatus. The memory 10 may be used not only to store application software installed in the computer device and various kinds of data, but also to temporarily store data that has been output or will be output.
In some embodiments, the processor 20 may be an Electronic Control Unit (ECU), a Central Processing Unit (CPU), a controller, a microcontroller, a microprocessor or other data Processing chip, and is configured to run program codes stored in the memory 10 or process data, such as executing an access restriction program.
It should be noted that the configuration shown in fig. 4 does not constitute a limitation of the computer device, and in other embodiments, the computer device may include fewer or more components than those shown, or some components may be combined, or a different arrangement of components may be used.
Embodiments of the present invention also provide a readable storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the curvature measurement method as described above.
Those of skill in the art will understand that the logic and/or steps illustrated in the flowcharts or otherwise described herein, such as an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device.
More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Further, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
It should be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is specific and detailed, but not to be understood as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A curvature measuring method is characterized by comprising the following steps:
the method comprises the following steps: irradiating a preset irradiation position of a wafer to be detected along a preset direction through a laser emitter, controlling the wafer to be detected to rotate within a preset speed range, performing data sampling on light spot information reflected by the wafer to be detected at a first preset sampling frequency according to a position sensor to obtain offset data of the wafer to be detected in a whole circle under the same radius, and calculating the surface inclination of the wafer to be detected according to the offset data of the wafer to be detected;
step two: acquiring a first standard calibration sheet and a second standard calibration sheet, irradiating a preset irradiation position of the first standard calibration sheet along the preset direction through the laser transmitter, controlling the first standard calibration sheet to rotate within the preset speed range, and performing data sampling on light spot information reflected by the first standard calibration sheet at the first preset sampling frequency according to the position sensor to obtain offset data of the first standard calibration sheet in a whole circle under the same radius,
And irradiating the laser emitter to a preset irradiation position of the second standard calibration sheet along the preset direction, controlling the second standard calibration sheet to rotate within the preset speed range, performing data sampling on light spot information reflected by the second standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data of the second standard calibration sheet in a whole circle under the same radius, calculating a base value of the first standard calibration sheet according to the offset data of the first standard calibration sheet, calculating a base value of the second standard calibration sheet according to the offset data of the second standard calibration sheet, and calculating calibration coefficients of the two standard calibration sheets according to the base value of the first standard calibration sheet and the base value of the second standard calibration sheet, wherein the same radius is that the laser emitter irradiates the wafer to be tested or the first standard calibration sheet or the second standard calibration sheet along the preset direction The distance between the irradiation position of the second standard calibration sheet and the rotation center;
step three: and calculating the curvature value of the wafer to be measured according to the base value of the first standard calibration sheet, the base value of the second standard calibration sheet, the calibration coefficients of the two standard calibration sheets and the surface inclination of the wafer to be measured.
2. A curvature measuring method according to claim 1, wherein the step two of calculating the base value of the first standard calibration piece from the offset data of the first standard calibration piece, calculating the base value of the second standard calibration piece from the offset data of the second standard calibration piece, and calculating the calibration coefficients of the two standard calibration pieces from the base value of the first standard calibration piece and the base value of the second standard calibration piece comprises:
calculating the base value of the first standard calibration sheet according to the offset data of the first standard calibration sheet, and calculating the base value of the second standard calibration sheet according to the offset data of the second standard calibration sheet;
and obtaining the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece, and calculating the calibration coefficients of the two standard calibration pieces according to the base value of the first standard calibration piece, the base value of the second standard calibration piece, the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece.
3. The curvature measuring method according to claim 2, wherein the calculation formula of the surface tilt amount of the wafer to be measured is:
in the formula (I), the compound is shown in the specification,
is the X-direction surface inclination amount of the wafer to be measured, X is the X-direction offset data of the wafer to be measured,
the method comprises the steps of obtaining a Y-direction surface inclination amount of a wafer to be measured, obtaining Y-direction offset data of the wafer to be measured, obtaining sum of a normalization coefficient of a position sensor, obtaining xDark preset X-direction standard offset data, obtaining yDark preset Y-direction standard offset data, and obtaining sumDark preset normalization coefficient.
4. A curvature measuring method according to claim 3, wherein the expression of the base value of the first standard calibration sheet is:
A = sqrt ( pow(x 1 ， 2) + pow(y 1 ，2) )；
wherein A represents a base value of the first calibration standard, x 1 X-direction offset data, y, representing a first calibration standard 1 Y-direction offset data representing a first standard calibration patch, sqrt representing an open square root function, pow representing a power function;
the expression of the base value of the second standard calibration sheet is as follows:
B = sqrt ( pow(x 2 ，2) + pow(y 2 ， 2) )；
wherein B represents a base value of the second calibration standard, x 2 X-direction offset data, y, representing a second calibration standard 2 Y-direction offset data representing a second standard calibration patch.
5. A curvature measuring method according to claim 4, wherein the expression of the calibration coefficients of the two standard calibration patches is:
Ratio = (A - B)/(TargetA - TargetB)；
in the formula, Ratio represents the calibration coefficients of the two standard calibration patches, TargetA represents the curvature value of the first standard calibration patch, and TargetB represents the curvature value of the second standard calibration patch.
6. The curvature measuring method according to claim 5, wherein the curvature value of the wafer to be measured is calculated by the formula:
curvature = Ratio * (N-r0)；
N =sqrt ( pow(
，2) + pow(
，2) )；
r0 = A - Ratio * TargetA；
in the formula, curve value of the wafer to be measured is represented by curve, r0 represents base value of the theoretical flat wafer, and N represents base value of the wafer to be measured.
7. A curvature measuring system, comprising:
the sampling module is used for irradiating a preset irradiation position of a wafer to be detected along a preset direction through a laser transmitter, controlling the wafer to be detected to rotate within a preset speed range, performing data sampling on light spot information reflected by the wafer to be detected at a first preset sampling frequency according to a position sensor to obtain offset data of the wafer to be detected in a whole circle under the same radius, and calculating the surface inclination of the wafer to be detected according to the offset data of the wafer to be detected;
the control module is used for acquiring a first standard calibration sheet and a second standard calibration sheet, irradiating the preset irradiation position of the first standard calibration sheet along the preset direction through the laser transmitter, controlling the first standard calibration sheet to rotate within the preset speed range, and performing data sampling on light spot information reflected by the first standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data, offset data and the like of the first standard calibration sheet in a whole circle under the same radius,
And irradiating the laser emitter to a preset irradiation position of the second standard calibration sheet along the preset direction, controlling the second standard calibration sheet to rotate within the preset speed range, performing data sampling on light spot information reflected by the second standard calibration sheet according to the position sensor at the first preset sampling frequency to obtain offset data of the second standard calibration sheet in a whole circle under the same radius, calculating a base value of the first standard calibration sheet according to the offset data of the first standard calibration sheet, calculating a base value of the second standard calibration sheet according to the offset data of the second standard calibration sheet, and calculating calibration coefficients of the two standard calibration sheets according to the base value of the first standard calibration sheet and the base value of the second standard calibration sheet, wherein the same radius is that the laser emitter irradiates the wafer to be tested or the first standard calibration sheet or the second standard calibration sheet along the preset direction The distance between the irradiation position of the second standard calibration sheet and the rotation center;
and the calculation module is used for calculating the curvature value of the wafer to be measured according to the base value of the first standard calibration sheet, the base value of the second standard calibration sheet, the calibration coefficients of the two standard calibration sheets and the surface inclination of the wafer to be measured.
8. The curvature measurement system of claim 7, wherein the control module comprises:
the execution unit is used for calculating the base value of the first standard calibration sheet according to the offset data of the first standard calibration sheet and calculating the base value of the second standard calibration sheet according to the offset data of the second standard calibration sheet;
and the calculating unit is used for acquiring the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece, and calculating the calibration coefficients of the two standard calibration pieces according to the base value of the first standard calibration piece, the base value of the second standard calibration piece, the curvature value of the first standard calibration piece and the curvature value of the second standard calibration piece.
9. A readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out a curvature measuring method according to any one of claims 1 to 6.
10. A computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the curvature measuring method according to any of claims 1 to 6 when executing the computer program.
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