CN114552385B - GaN-based laser diode structure and manufacturing method - Google Patents
GaN-based laser diode structure and manufacturing method Download PDFInfo
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- CN114552385B CN114552385B CN202210167214.2A CN202210167214A CN114552385B CN 114552385 B CN114552385 B CN 114552385B CN 202210167214 A CN202210167214 A CN 202210167214A CN 114552385 B CN114552385 B CN 114552385B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 55
- 238000002161 passivation Methods 0.000 claims abstract description 40
- 230000000903 blocking effect Effects 0.000 claims abstract description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 25
- 238000005253 cladding Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 14
- 230000017525 heat dissipation Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 195
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a GaN-based laser diode structure and a manufacturing method thereof, wherein the GaN-based laser diode structure comprises an N electrode, an N-type GaN substrate, an N covering layer, an N waveguide layer, a light emitting active layer, a P waveguide layer, an electron blocking layer, a passivation layer and an interface insulating layer which are sequentially stacked; the upper surface of the P-type electron blocking layer is convexly provided with a ridge, and the ridge comprises a P cover layer, a P contact layer and a P contact electrode layer; the longitudinal section of the passivation layer at one side of the ridge is in an inverted Z shape, the first horizontal section is arranged on the upper surface of the ridge, the vertical section is arranged on one side surface of the ridge, and the second horizontal section is arranged on the upper surface of the P-type electron blocking layer; the longitudinal section of the passivation layer at the other side of the ridge is Z-shaped, and the passivation layers at the two sides of the ridge are symmetrically arranged; the interface insulating layer is arranged on the upper surface of the P-type electron blocking layer and is positioned at the side part of the second horizontal section; the upper surface of the interface insulating layer is provided with a first metal layer, and P electrodes are arranged on the first metal layer, the passivation layer and the ridge. The heat dissipation effect is further improved on the premise of realizing the optical confinement layer.
Description
Technical Field
The invention relates to the technical field of laser diodes, in particular to a GaN-based laser diode structure and a manufacturing method thereof.
Background
In order to form a good ridge waveguide structure, the side surface of the ridge is covered with an optical insulation layer SiO 2, so that optical limitation can be formed, and current is injected from the ridge to form high current density so as to reach a laser threshold; the area of the ridge is small, the remainder is covered with silicon dioxide, and an electrode structure is fabricated. Electrodes are fabricated on the ridge and silicon dioxide because silicon dioxide has a low thermal conductivity and poor heat dissipation during high current operation.
Disclosure of Invention
Based on this, an object of the present invention is to provide a GaN-based laser diode structure that further improves the heat dissipation effect on the premise of realizing an optical confinement layer. In order to achieve the above purpose, the technical scheme of the invention is as follows:
a GaN-based laser diode structure comprises an N electrode, an N-type GaN substrate, an N covering layer, an N waveguide layer, a light emitting active layer, a P waveguide layer, an electron blocking layer, a passivation layer and an interface insulating layer;
The N-type GaN substrate, the N cover layer, the N waveguide layer, the light emitting active layer, the P waveguide layer and the P-type electron blocking layer are sequentially stacked on the N electrode, a ridge is convexly arranged on the upper surface of the P-type electron blocking layer, the ridge is provided with a top surface and a side surface, and the ridge comprises the P cover layer, a P contact layer and a P contact electrode layer which are sequentially stacked on the P cover layer;
The longitudinal section of the passivation layer at one side of the ridge is in an inverted Z shape and comprises a first horizontal section, a vertical section and a second horizontal section which are sequentially connected, wherein the first horizontal section is arranged on the upper surface of the P contact layer and is positioned at the side part of the P contact electrode layer; the vertical section is arranged on one side surface of the ridge, and the second horizontal section is arranged on the upper surface of the P-type electron blocking layer; the longitudinal section of the passivation layer at the other side of the ridge is Z-shaped, the passivation layers at the two sides of the ridge are symmetrically arranged, and the passivation layer is a SiO 2 layer;
The interface insulating layer is arranged on the upper surface of the P-type electron blocking layer and is positioned on the side part of the second horizontal section; and a first metal layer is arranged on the interface insulating layer and the second horizontal section, and a second metal layer serving as a P electrode is also arranged on the first metal layer, the passivation layer and the ridge.
Further, a sum of the thickness of the interface insulating layer and the thickness of the first metal layer is greater than or equal to a sum of the thickness of the P-cladding layer and the thickness of the P-contact layer.
Further, in the width direction of the ridge, the width of the first horizontal segment is smaller than the width of the second horizontal segment.
Further, in the length direction of the ridge stripe, the length of the first metal layer is smaller than the length of the ridge stripe.
Further, in the width direction of the ridge, the width of the second horizontal segment is greater than 5um.
Further, the refractive index of the SiO 2 layer is 1.4-1.6, and the thickness is 100nm-1000nm.
Further, the interface insulating layer is made of GaF x and GaCl x.
According to another aspect of the present invention, there is provided a method of manufacturing a GaN-based laser diode structure, the method comprising the steps of:
S1, manufacturing patterned photoresist on a P contact layer, and etching a P cover layer and a P contact layer which are sequentially stacked on a P type electron blocking layer to form a ridge by taking the patterned photoresist as a mask; the ridge protrudes from the upper surface of the P-type electron blocking layer, and the ridge is provided with a top surface and a side surface;
S2, removing the patterned photoresist, and growing a SiO 2 layer on the side surface and the top surface of the ridge and the upper surface of the P-type electron blocking layer connected with the lower part of the side surface of the ridge to form a passivation layer;
S3, defining an etching area on the SiO 2 layer on the upper surface of the P-type electron blocking layer connected with the lower part of the side surface of the ridge, manufacturing patterned photoresist, and etching the SiO 2 layer of the etching area by taking the patterned photoresist as a mask;
S4, removing the patterned photoresist, and performing insulating gas treatment on the etched area to form an interface insulating layer;
S5, manufacturing patterned photoresist on the SiO 2 layer on the top surface of the ridge, and etching part of the SiO 2 layer on the top surface of the ridge by taking the patterned photoresist as a mask so as to expose part of the top surface of the ridge; after etching is finished, the longitudinal section of the passivation layer on one side of the ridge is in an inverted Z shape and comprises a first horizontal section, a vertical section and a second horizontal section which are sequentially connected, wherein the first horizontal section is positioned above the second horizontal section, and the first horizontal section is arranged on the upper surface of the P contact layer and positioned on the side part of the P contact electrode layer; the vertical section is arranged on one side surface of the ridge, and the second horizontal section is arranged on the upper surface of the P-type electron blocking layer; the longitudinal section of the passivation layer at the other side of the ridge is Z-shaped, and the passivation layers at the two sides of the ridge are symmetrically arranged;
S6, removing the patterned photoresist, and depositing a metal film on the exposed top surface of the ridge stripe to form a P contact electrode layer, so that the ridge stripe is also provided with the P contact electrode layer; or depositing a metal film on the exposed top surface of the ridge to form a P contact electrode layer, so that the ridge also has the P contact electrode layer, and removing the patterned photoresist;
S7, performing metal coating on the interface insulating layer and the upper surface of the second horizontal section to form a first metal layer;
s8, performing metal coating on the first metal layer, the passivation layer and the P contact electrode layer to form a second metal layer serving as a P electrode, wherein the P electrode is electrically connected with the first metal layer;
In step S4, an interface insulating layer is formed by performing an insulating gas treatment on the etched region, wherein the physical bombardment gas used is one or a combination of SF 6、CF4、CHF3、Cl2 and BCl 3; the physical bombardment gas used does not contain inert Ar gas.
The beneficial effects of the invention are as follows:
According to the GaN-based laser diode structure and the manufacturing method thereof, the optical cover layer on the side face of the ridge is manufactured in a partitioning mode, the area close to the ridge is covered by SiO 2 to realize the optical limiting layer, the area of the area far away from the ridge is etched to form the interface insulating layer, the heat dissipation metal and the metal electrode are manufactured, the heat dissipation effect is effectively improved on the premise that the optical limiting layer is realized, and the light field limitation and the insulation heat dissipation effective separation treatment are realized.
Drawings
FIG. 1 is a schematic diagram of a GaN-based laser diode structure according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a GaN-based laser diode structure according to an embodiment of the invention;
in the drawing the view of the figure,
101 An N electrode;
102 An n-type GaN substrate;
103 An N cover layer;
104 An N waveguide layer;
105. a light emitting active layer;
106 A P waveguide layer;
107 A P-type electron blocking layer;
108. An interface insulating layer;
109. A first metal layer;
110 A P electrode;
111. a passivation layer;
109. A first metal layer;
110. A second metal layer;
112 A P cover layer;
113 A P contact layer;
114 P contacts the electrode layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following describes the structure and manufacturing method of the GaN-based laser diode of the present invention in further detail with reference to the accompanying drawings and examples. The following embodiments and features in the embodiments may be combined with each other without collision. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1 and 2, the GaN-based laser diode structure according to an embodiment of the present invention includes an N electrode 101, an N-type GaN substrate 102, an N cladding layer 103, an N waveguide layer 104, a light emitting active layer 105, a P waveguide layer 106, an electron blocking layer 107, a passivation layer 111, and an interface insulating layer 108.
An N-type GaN substrate 102, an N cladding layer 103, an N waveguide layer 104, a light emitting active layer 105, a P waveguide layer 106, and a P-type electron blocking layer 107 are sequentially stacked on the N electrode 101. The upper surface of the P-type electron blocking layer 107 is provided with a ridge stripe protruding therefrom, the ridge stripe having a top surface and a side surface, the ridge stripe including a P-cap layer 112 and P-contact layers 113, 114 sequentially stacked (layered) on the upper surface of the P-cap layer 112.
The longitudinal section of the passivation layer 111 on one side of the ridge is in an inverted Z shape, and comprises a first horizontal section, a vertical section and a second horizontal section which are sequentially connected. The first horizontal segment is located above the second horizontal segment, and the first horizontal segment is located at the upper surface of the P contact layer 113 and located at the side of the P contact electrode layer 114; the vertical section is arranged on one side surface of the ridge stripe, and the second horizontal section is arranged on the upper surface of the P-type electron blocking layer 107; the longitudinal section of the passivation layer 108 on the other side of the ridge is zigzag.
The passivation layers 111 on two sides of the ridge are symmetrically arranged, and the passivation layers 111 are SiO 2 layers.
The interface insulating layer 108 is arranged on the upper surface of the P-type electron blocking layer 107 and is positioned on the side part of the second horizontal section; a first metal layer 109 is provided on the interface insulating layer 108 and the second horizontal section, and a second metal layer as a P electrode 110 is further provided on the first metal layer 109, the passivation layer 111 and the ridge stripe. The thickness of the second metal layer is greater than the thickness of the first metal layer 109.
Preferably, the sum of the thicknesses of the interface insulating layer 108 and the first metal layer 109 is greater than or equal to the sum of the thickness of the P-cladding layer 112 and the thickness of the P-contact layer 113. The refractive index of the SiO 2 layer is 1.4-1.6, and the thickness is 100nm-1000nm. Preferably, in the width direction of the ridge, the width of the second horizontal segment is greater than 5um.
The P-contact electrode layer 114 is electrically connected to the P-electrode 110.
The width of the first horizontal segment is smaller than the width of the second horizontal segment in the width direction of the ridge 1061. In the length direction of the ridge 1061, the length of the first metal layer 109 is smaller than the length of the ridge 1061.
The N cladding layer 103 may be an N-type AlGaN layer, the N waveguide layer 104 may be an N-type GaN layer, and the light emitting active layer 105 may be an InGaN layer; the P waveguide layer 106 may be a P-type GaN layer, the P-type electron blocking layer 107 may be a P-type AlGaN layer, the P-cladding layer 112 may be a P-type AlGaN layer, and the P-contact layer 113 may be a P-type GaN layer.
The manufacturing process of the GaN-based laser diode structure mainly comprises the following steps:
S1, manufacturing patterned photoresist on a P contact layer 113, and etching a P cover layer 112 and the P contact layer 113 which are sequentially stacked on a P-type electron blocking layer 107 by taking the patterned photoresist as a mask to form a ridge; the ridge protrudes from the upper surface of the P-type electron blocking layer 107, and the ridge has a top surface and side surfaces;
S2, removing the patterned photoresist, and growing a SiO 2 layer on the side surface and the top surface of the ridge and the upper surface of the P-type electron blocking layer 107 connected with the lower part of the side surface of the ridge to form a passivation layer 111;
s3, defining an etching area on the SiO 2 layer on the upper surface of the P-type electron blocking layer 107 connected with the lower part of the side surface of the ridge, manufacturing patterned photoresist, and etching the SiO 2 layer of the etching area by taking the patterned photoresist as a mask;
S4, removing the patterned photoresist, and performing insulating gas treatment on the etched region to form an interface insulating layer 108;
s5, manufacturing patterned photoresist on the SiO 2 layer on the top surface of the ridge, and etching part of the SiO 2 layer on the top surface of the ridge by taking the patterned photoresist as a mask so as to expose part of the top surface of the ridge; after etching, the longitudinal section of the passivation layer 111 at one side of the ridge is in an inverted zigzag shape, and comprises a first horizontal section, a vertical section and a second horizontal section which are sequentially connected, wherein the first horizontal section is positioned above the second horizontal section, is positioned at the upper surface of the P contact layer 113 and is positioned at the side part of the P contact electrode layer 114; the vertical section is arranged on one side surface of the ridge stripe, and the second horizontal section is arranged on the upper surface of the P-type electron blocking layer 107; the longitudinal section of the passivation layer 111 at the other side of the ridge is Z-shaped, and the passivation layers 111 at the two sides of the ridge are symmetrically arranged;
S6, removing the patterned photoresist, and depositing a metal film on the exposed top surface of the ridge stripe to form a P contact electrode layer 114, so that the ridge stripe also has the P contact electrode layer 114; or depositing a metal film at the exposed top surface of the ridge stripe to form a P-contact electrode layer 114, so that the ridge stripe also has the P-contact electrode layer 114, and removing the patterned photoresist;
s7, performing metal coating on the interface insulating layer 108 and the upper surface of the second horizontal section to form a first metal layer 109;
s8, performing metal coating on the first metal layer 109, the passivation layer 111 and the P contact electrode layer 114 to form a second metal layer serving as a P electrode 110, wherein the P electrode 110 is electrically connected with the first metal layer 109;
In step S4, the etching region is subjected to an insulating gas treatment to form an interface insulating layer 108, where the physical bombardment gas used is one or a combination of SF 6、CF4、CHF3、Cl2 and BCl 3; the physical bombardment gas used does not contain inert Ar gas. Preferably, the interface insulating layer 108 is formed of GaF x and GaCl x.
The sequence of step S4 and step S5 may be exchanged in the above process.
Plasma etching is often used for mesa etching in semiconductor chip manufacturing processes, and in order to remove non-volatile products generated during etching, an inert bombardment gas is often added to the gas component to provide a physical bombardment effect.
The invention adopts plasma etching method to etch locally without adding inert bombardment gas, thus the surface layer generates a thin non-volatile product, and the product forms Schottky contact with the semiconductor conductive layer, thereby generating the characteristic structure of local current blocking. The invention can guide current into the effective luminous composite region, solves the shading problem caused by electrode design, and avoids the failure problem of poor level and poor adhesiveness caused by using an insulating layer as a current blocking structure.
A metal film is deposited at the exposed top surface of the ridge to form a P-contact electrode layer 114, the P-contact electrode layer 114 being for electrical connection with the P-electrode 110. The provision of the P-contact electrode layer 114 improves the electrode conductivity characteristics.
The P-contact electrode layer 114 may be fabricated by using the patterned photoresist in step S5 as a mask, or by separately fabricating a patterned photoresist mask on the SiO 2 layer on the top surface of the ridge. Of course, the P-contact electrode layer 114 may be formed without using patterned photoresist as a mask, and the metal film may be deposited by ion beam sputtering deposition or other film deposition processes, for example, magnetron sputtering or other film deposition methods may be used to grow the metal electrode.
Exposing the middle position of the ridge, and can be a rectangular hole corresponding to the ridge structure, wherein the boundary of the hole does not exceed the boundary of the ridge. I.e. after etching a portion of the SiO 2 layer at the top surface of the ridge so that the SiO 2 layer at the top surface of the ridge may have rectangular holes corresponding to the ridge structure, the boundaries of the holes not exceeding the boundaries of the ridge.
The patterned passivation layer (SiO 2 layer) is adopted, the optical coating layer on the side surface of the ridge is manufactured in a partitioning way, and the area close to the ridge can adopt low-refractive-index SiO 2 and the like to provide an optical limiting function; the area far away from the ridge is subjected to gas etching treatment to form an insulating interface, so that better heat dissipation of the electrode is realized.
The optical coating layer on the side surface of the ridge adopts a patterned insulating material, siO 2 is used for covering the side surface of the ridge, an optical limiting layer is realized, the area of a position area far away from the ridge is etched away, a gas etching treatment is adopted, an insulating layer is formed, heat dissipation metal and a metal electrode are manufactured, the heat dissipation effect is fully improved, and the light field limiting and insulating heat dissipation effective separation treatment is realized.
According to the GaN-based laser diode structure and the manufacturing method of the GaN-based laser diode structure, the optical cover layer on the side face of the ridge is manufactured in a partitioning mode, the area close to the ridge is covered on the side face of the ridge by SiO 2, the optical limiting layer is achieved, the area of the position area far away from the ridge is etched away, the interface insulating layer is arranged, the heat dissipation metal and the metal electrode are manufactured, the heat dissipation effect is effectively improved on the premise that the optical limiting layer is achieved, and the light field limiting and insulating heat dissipation effective separation treatment is achieved.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it is possible for those skilled in the art to make several modifications and improvements without departing from the spirit of the present invention, and all equivalent embodiments or modifications are included in the scope of the present invention.
Claims (8)
1. A GaN-based laser diode structure characterized by comprising an N electrode (101), an N-type GaN substrate (102), an N cladding layer (103), an N waveguide layer (104), a light emitting active layer (105), a P waveguide layer (106), an electron blocking layer (107), a passivation layer (111) and an interface insulating layer (108);
The N-type GaN substrate (102), the N cover layer (103), the N waveguide layer (104), the light emitting active layer (105), the P waveguide layer (106) and the P-type electron blocking layer (107) are sequentially stacked on the N electrode (101), a ridge is arranged on the upper surface of the P-type electron blocking layer (107) in a protruding mode, the ridge is provided with a top surface and a side surface, and comprises a P cover layer (112), a P contact layer (113) and a P contact electrode layer (114) which are sequentially stacked on the P cover layer (112);
The longitudinal section of the passivation layer (111) at one side of the ridge is in an inverted Z shape and comprises a first horizontal section, a vertical section and a second horizontal section which are sequentially connected, wherein the first horizontal section is arranged on the upper surface of the P contact layer (113) and is positioned at the side part of the P contact electrode layer (114); the vertical section is arranged on one side surface of the ridge, and the second horizontal section is arranged at the upper surface of the P-type electron blocking layer (107); the longitudinal section of the passivation layer (111) at the other side of the ridge is Z-shaped, the passivation layers (111) at the two sides of the ridge are symmetrically arranged, and the passivation layers (111) are SiO 2 layers;
The interface insulating layer (108) is arranged on the upper surface of the P-type electron blocking layer (107) and is positioned on the side part of the second horizontal section; a first metal layer (109) is arranged on the interface insulating layer (108) and the second horizontal section, and a second metal layer serving as a P electrode (110) is further arranged on the first metal layer (109), the passivation layer (111) and the ridge stripe.
2. The GaN-based laser diode structure of claim 1, wherein a sum of a thickness of the interface insulating layer (108) and a thickness of the first metal layer (109) is greater than or equal to a sum of a thickness of the P cladding layer (112) and a thickness of the P contact layer (113).
3. The GaN-based laser diode structure of claim 2, wherein a width of the first horizontal segment is smaller than a width of the second horizontal segment in a width direction of the ridge stripe.
4. The GaN-based laser diode structure of claim 1, wherein a length of the first metal layer is smaller than a length of the ridge stripe in a length direction of the ridge stripe.
5. The GaN-based laser diode structure of claim 1, wherein the width of the second horizontal segment is greater than 5um in the width direction of the ridge stripe.
6. The GaN-based laser diode structure of any one of claims 1 to 5, wherein the SiO 2 layer has a refractive index of 1.4 to 1.6 and a thickness of 100nm to 1000nm.
7. The GaN-based laser diode structure of any of claims 1-5, wherein the interface insulating layer (108) is of materials GaF x and GaCl x.
8. A method of manufacturing a GaN-based laser diode structure as claimed in any one of claims 1 to 7, comprising the steps of:
S1, manufacturing patterned photoresist on a P contact layer (113), and etching a P cover layer (112) and the P contact layer (113) which are sequentially stacked on a P-type electron blocking layer (107) by taking the patterned photoresist as a mask to form ridge; the ridge protrudes from the upper surface of the P-type electron blocking layer (107), and the ridge is provided with a top surface and side surfaces;
S2, removing the patterned photoresist, and growing a SiO 2 layer on the side surface and the top surface of the ridge and the upper surface of the P-type electron blocking layer (107) connected with the lower part of the side surface of the ridge to form a passivation layer (111);
S3, defining an etching area on the SiO 2 layer at the upper surface of the P-type electron blocking layer (107) connected with the lower part of the side surface of the ridge, manufacturing patterned photoresist, and etching the SiO 2 layer of the etching area by taking the patterned photoresist as a mask;
s4, removing the patterned photoresist, and performing insulating gas treatment on the etched area to form an interface insulating layer (108);
S5, manufacturing patterned photoresist on the SiO 2 layer on the top surface of the ridge, and etching part of the SiO 2 layer on the top surface of the ridge by taking the patterned photoresist as a mask so as to expose part of the top surface of the ridge; after etching is finished, the longitudinal section of the passivation layer (111) at one side of the ridge is in an inverted Z shape and comprises a first horizontal section, a vertical section and a second horizontal section which are sequentially connected, wherein the first horizontal section is positioned above the second horizontal section, and the first horizontal section is arranged on the upper surface of the P contact layer (113) and is positioned at the side part of the P contact electrode layer (114); the vertical section is arranged on one side surface of the ridge, and the second horizontal section is arranged on the upper surface of the P-type electron blocking layer (107); the longitudinal section of the passivation layer (111) at the other side of the ridge is Z-shaped, and the passivation layers (111) at the two sides of the ridge are symmetrically arranged;
S6, removing the patterned photoresist, and depositing a metal film on the exposed top surface of the ridge stripe to form a P contact electrode layer (114), so that the ridge stripe also has the P contact electrode layer (114); or depositing a metal film at the exposed top surface of the ridge to form a P-contact electrode layer (114), such that the ridge also has the P-contact electrode layer (114), removing the patterned photoresist;
S7, performing metal coating on the interface insulating layer (108) and the upper surface of the second horizontal section to form a first metal layer (109);
S8, performing metal coating on the first metal layer (109), the passivation layer (111) and the P contact electrode layer (114) to form a second metal layer serving as a P electrode (110), wherein the P electrode (110) is electrically connected with the first metal layer (109);
Wherein in step S4, the etching region is subjected to an insulating gas treatment to form an interface insulating layer (108), and the physical bombardment gas used is one or a combination of SF 6、CF4、CHF3、Cl 2 and BCl 3; the physical bombardment gas used does not contain inert Ar gas.
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| CN1856915A (en) * | 2003-09-25 | 2006-11-01 | 松下电器产业株式会社 | Nitride semiconductor device and method for manufacturing same |
| CN111641103A (en) * | 2020-06-09 | 2020-09-08 | 厦门市三安光电科技有限公司 | Laser diode and manufacturing method thereof |
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| CN111641103A (en) * | 2020-06-09 | 2020-09-08 | 厦门市三安光电科技有限公司 | Laser diode and manufacturing method thereof |
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