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CN114545740A - A kind of translucent wafer and exposure process processing method thereof - Google Patents

A kind of translucent wafer and exposure process processing method thereof Download PDF

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CN114545740A
CN114545740A CN202210086229.6A CN202210086229A CN114545740A CN 114545740 A CN114545740 A CN 114545740A CN 202210086229 A CN202210086229 A CN 202210086229A CN 114545740 A CN114545740 A CN 114545740A
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wafer
reflection film
translucent
reflection
present application
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兰则超
杨思川
苗湘
黄小东
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Beijing Zhongke Feihong Technology Co ltd
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Beijing Zhongke Feihong Technology Co ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

本申请涉及一种半透明晶圆及其曝光过程加工方法,其方法包括在所述晶圆底部镀一层防反射薄膜。本申请不仅能够有效减少光线在晶圆底部向上反射,以解决半透明晶圆在曝光过程中因晶圆底部反射带来的一致性较差的问题。同时,由于本申请是在晶圆底部进行镀膜,所以能够保证防反射薄膜较好的膜厚均匀性以及较好的平整度,对镀膜工艺的要求较低,工艺也较为简单。

Figure 202210086229

The present application relates to a translucent wafer and an exposure process processing method thereof. The method includes coating an anti-reflection film on the bottom of the wafer. The present application can not only effectively reduce the upward reflection of light at the bottom of the wafer, but also solve the problem of poor consistency caused by reflection from the bottom of the wafer during the exposure process of the translucent wafer. At the same time, since the coating is performed on the bottom of the wafer in the present application, better thickness uniformity and better flatness of the anti-reflection film can be ensured, the requirements for the coating process are lower, and the process is relatively simple.

Figure 202210086229

Description

一种半透明晶圆及其曝光过程加工方法A kind of translucent wafer and exposure process processing method thereof

技术领域technical field

本申请涉及声表面波滤波器的领域,尤其是涉及一种半透明晶圆及其曝光过程底部加工方法。The present application relates to the field of surface acoustic wave filters, and in particular, to a translucent wafer and a bottom processing method during exposure.

背景技术Background technique

声表面波器件应用于通信电台、卫星通信和雷达指引等高科技技术领域,目前军用和民用声表面波滤波器芯片对一致性要求越来越高。SAW devices are used in high-tech fields such as communication radio, satellite communication and radar guidance. At present, military and civilian SAW filter chips have higher and higher requirements for consistency.

可以了解的是,声表面波滤波器芯片工艺流片过程中,透明或半透明晶圆在曝光过程中,曝光光源穿透晶圆后在晶圆底部发生反射,反射的光会造成光刻胶曝光不均匀,以影响芯片制作中线条的均匀性,进而造成产品不合格或一致性较差。It can be understood that during the tape-out process of the surface acoustic wave filter chip, the transparent or semi-transparent wafer is exposed during the exposure process. After the exposure light source penetrates the wafer, reflection occurs at the bottom of the wafer. The reflected light will cause photoresist. Uneven exposure will affect the uniformity of lines in chip fabrication, resulting in unqualified products or poor consistency.

为此,现有技术中通常在匀胶之前会在晶圆正面涂覆防反射层,涂覆防反射层后进行匀胶以一定程度上改善曝光反射问题。For this reason, in the prior art, an anti-reflection layer is usually coated on the front side of the wafer before gluing, and gluing is performed after the anti-reflection layer is applied to improve the exposure reflection problem to a certain extent.

但是,由于防反射层涂覆在晶圆正面,会对匀胶工序的胶膜均匀性造成影响,这就要求在晶圆正面进行的涂覆工艺十分精细,进而增加了工艺复杂性。However, since the anti-reflection layer is coated on the front side of the wafer, it will affect the uniformity of the adhesive film during the glue leveling process, which requires a very fine coating process on the front side of the wafer, thereby increasing the complexity of the process.

发明内容SUMMARY OF THE INVENTION

为了在改善曝光反射问题的同时简化工艺,本申请提供一种半透明晶圆及其曝光过程加工方法。In order to simplify the process while improving the problem of exposure reflection, the present application provides a translucent wafer and a method for processing the same during exposure.

第一方面,本申请提供一种半透明晶圆曝光过程加工方法,采用如下的技术方案:In the first aspect, the present application provides a method for processing a translucent wafer exposure process, which adopts the following technical solutions:

一种半透明晶圆曝光过程加工方法,包括在所述晶圆底部镀一层防反射薄膜。A method for processing a translucent wafer during exposure, comprising coating a bottom of the wafer with an anti-reflection film.

通过采用上述技术方案,不仅能够有效减少光线在晶圆底部向上反射,以解决半透明晶圆在曝光过程中因晶圆底部反射带来的一致性较差的问题。同时,由于本申请是在晶圆底部进行镀膜,所以能够保证防反射薄膜较好的膜厚均匀性以及较好的平整度,对镀膜工艺的要求较低,工艺也较为简单。By adopting the above technical solution, the upward reflection of light at the bottom of the wafer can be effectively reduced, so as to solve the problem of poor consistency caused by reflection from the bottom of the wafer during the exposure process of the translucent wafer. At the same time, since the coating is performed on the bottom of the wafer in the present application, better thickness uniformity and better flatness of the anti-reflection film can be ensured, the requirements for the coating process are lower, and the process is relatively simple.

可选的,所述防反射薄膜不与特定化学药品发生化学反应,特定化学药品为丙酮、无水乙醇、四甲基氢氧化铵水溶液和光刻胶。Optionally, the anti-reflection film does not chemically react with a specific chemical, and the specific chemical is acetone, anhydrous ethanol, an aqueous solution of tetramethylammonium hydroxide and a photoresist.

通过采用上述技术方案,由于在半透明晶圆的整个加工过程中需要使用多种化学药品,故为了保证防反射薄膜的稳定性,需要防反射薄膜具有一定的惰性。By adopting the above technical solution, since a variety of chemicals need to be used in the entire processing process of the translucent wafer, in order to ensure the stability of the anti-reflection film, the anti-reflection film needs to have a certain degree of inertness.

可选的,所述防反射薄膜由厚度为nm级时呈现灰黑色的金属材料制成。Optionally, the anti-reflection film is made of a gray-black metallic material with a thickness of the nm order.

通过采用上述技术方案,防反射薄膜能够有效吸收穿透晶圆的光线,防止光线在晶圆底部向各个方向反射。By adopting the above technical solutions, the anti-reflection film can effectively absorb the light penetrating the wafer and prevent the light from being reflected in all directions at the bottom of the wafer.

可选的,所述金属材料为铬。Optionally, the metal material is chromium.

可选的,所述防反射薄膜的厚度为5-8nm。Optionally, the thickness of the anti-reflection film is 5-8 nm.

通过采用上述技术方案,5nm厚度金属铬膜层使白色半透明晶圆呈现黑色,其能够有效吸收穿透晶圆的光线,防止光线在晶圆底部向各个方向反射,从而改善曝光均匀性。By adopting the above technical solution, the 5nm thick metal chrome film layer makes the white translucent wafer appear black, which can effectively absorb the light penetrating the wafer and prevent the light from being reflected in all directions at the bottom of the wafer, thereby improving the exposure uniformity.

可选的,所述防反射薄膜通过电子束蒸镀技术或溅射镀膜技术制成。Optionally, the anti-reflection film is made by electron beam evaporation technology or sputtering coating technology.

第二方面,本申请提供一种半透明晶圆,采用如下的技术方案:In the second aspect, the present application provides a translucent wafer, which adopts the following technical solutions:

一种半透明晶圆,包括晶圆本体,所述晶圆本体的底部镀有一层防反射薄膜。A translucent wafer includes a wafer body, and the bottom of the wafer body is coated with a layer of anti-reflection film.

可选的,所述防反射薄膜不与特定化学药品发生化学反应,特定化学药品为丙酮、无水乙醇、四甲基氢氧化铵水溶液和光刻胶。Optionally, the anti-reflection film does not chemically react with a specific chemical, and the specific chemical is acetone, anhydrous ethanol, an aqueous solution of tetramethylammonium hydroxide and a photoresist.

可选的,所述防反射薄膜由金属铬制成。Optionally, the anti-reflection film is made of metallic chromium.

可选的,所述防反射薄膜的厚度为5-8nm。Optionally, the thickness of the anti-reflection film is 5-8 nm.

综上所述,本申请包括以下至少一种有益技术效果:To sum up, the present application includes at least one of the following beneficial technical effects:

1.在所述晶圆底部镀一层防反射薄膜,不仅能够有效减少光线在晶圆底部向上反射,以解决半透明晶圆在曝光过程中因晶圆底部反射带来的一致性较差的问题。同时,由于本申请是在晶圆底部进行镀膜,所以能够保证防反射薄膜较好的膜厚均匀性以及较好的平整度,对镀膜工艺的要求较低,工艺也较为简单;1. Coating an anti-reflection film on the bottom of the wafer can not only effectively reduce the upward reflection of light at the bottom of the wafer, but also solve the problem of poor consistency of the semi-transparent wafer caused by the reflection at the bottom of the wafer during the exposure process. question. At the same time, since the application is coated on the bottom of the wafer, it can ensure better film thickness uniformity and better flatness of the anti-reflection film, and the requirements for the coating process are lower and the process is relatively simple;

2.选用厚度为nm级时呈现灰黑色的金属材料,使得防反射薄膜能够有效吸收穿透晶圆的光线,防止光线在晶圆底部向各个方向反射;2. Select a gray-black metal material with a thickness of nm level, so that the anti-reflection film can effectively absorb the light passing through the wafer and prevent the light from being reflected in all directions at the bottom of the wafer;

3.5-8nm厚度金属铬膜层使半透明晶圆呈现黑色,其能有效吸收穿透晶圆的光线,防止光线在晶圆底部向各个方向反射,从而改善曝光均匀性。The 3.5-8nm thick metal chrome layer makes the translucent wafer black, which can effectively absorb the light that penetrates the wafer and prevent the light from being reflected in all directions at the bottom of the wafer, thereby improving exposure uniformity.

附图说明Description of drawings

图1是现有技术中的晶圆的结构示意图。FIG. 1 is a schematic structural diagram of a wafer in the prior art.

图2是本申请实施例的晶圆的结构示意图。FIG. 2 is a schematic structural diagram of a wafer according to an embodiment of the present application.

附图标记说明:1、晶圆本体;2、防反射薄膜;3、光刻胶。Description of reference numerals: 1. Wafer body; 2. Anti-reflection film; 3. Photoresist.

具体实施方式Detailed ways

以下结合附图1-2对本申请作进一步详细说明。The present application will be further described in detail below in conjunction with accompanying drawings 1-2.

参照图1,可以了解的是,在声表面波滤波器芯片工艺流片过程中,需要对透明或者半透明晶圆进行曝光。曝光光源在穿透晶圆后,会在晶圆的底部发生反射,其中反射光会造成光刻胶3曝光不均匀的问题,影响芯片制作中线条的均匀性,进而造成产品不合格或一致性较差。Referring to FIG. 1 , it can be understood that in the process of tape-out of the surface acoustic wave filter chip process, a transparent or semi-transparent wafer needs to be exposed. After the exposure light source penetrates the wafer, it will be reflected at the bottom of the wafer, and the reflected light will cause uneven exposure of the photoresist 3, which will affect the uniformity of the lines in the chip fabrication, resulting in unqualified or consistent products. poor.

在现有技术中,为了解决上述的问题,通常在匀胶之前会在晶圆的正面涂覆防反射层,而后再进行匀胶。匀胶前涂覆防反射层的工艺可以在一定程度上改善曝光反射问题。但是,由于现有涂覆工艺设备无法实现在晶圆底部涂覆防反射层,并且涂覆于晶圆底部也无法达到防反射的效果,故防反射层只能涂覆于晶圆正面,以使得对匀胶工序的胶膜均匀性必然会产生影响,进而造成了涂覆工艺的复杂性。In the prior art, in order to solve the above-mentioned problems, an anti-reflection layer is usually coated on the front side of the wafer before the gluing, and then the gluing is performed. The process of coating the anti-reflection layer before leveling can improve the problem of exposure reflection to a certain extent. However, since the existing coating process equipment cannot realize the coating of the anti-reflection layer on the bottom of the wafer, and the anti-reflection effect cannot be achieved by coating the bottom of the wafer, the anti-reflection layer can only be coated on the front side of the wafer to avoid This will inevitably affect the uniformity of the adhesive film in the glue leveling process, thereby causing the complexity of the coating process.

不仅如此,由于涂覆的防反射层属于有毒危险类的化学药品,因此在工艺流片的过程中需要增加专用的设备和厂房,同时,还需要对多余的工艺废液进行处理和排放,进而导致成本较高。Not only that, because the coated anti-reflection layer belongs to toxic and dangerous chemicals, special equipment and workshops need to be added during the process of tape-out. lead to higher costs.

本申请实施例公开一种半透明晶圆,能够有效改善晶圆底部曝光光线反射的问题。The embodiment of the present application discloses a translucent wafer, which can effectively improve the problem of light reflection at the bottom of the wafer.

参照图2,半透明晶圆包括晶圆本体1。晶圆本体1为硅晶体经过研磨、 抛光和切片步骤后形成的硅晶圆片。由于本申请不涉及对晶圆本体1的制作过程的改进,故不再对这部分内容进行详细介绍,具体可参照相关领域的现有技术。Referring to FIG. 2 , the translucent wafer includes a wafer body 1 . The wafer body 1 is a silicon wafer formed by grinding, polishing and slicing silicon crystals. Since the present application does not involve the improvement of the manufacturing process of the wafer body 1 , this part of the content will not be described in detail. For details, reference may be made to the prior art in the related field.

在本申请中,晶圆本体1的底部镀有一层防反射薄膜2。In the present application, the bottom of the wafer body 1 is coated with an anti-reflection film 2 .

具体的,因为防反射薄膜2为黑色薄膜,在曝光光源对晶圆本体1进行照射时,防反射薄膜2能够吸收曝光穿透晶圆本体1到达晶圆本体1底部的光线,有效减少经过晶圆本体1的底部反射的光线量,进而解决曝光一致性较差的问题。为了使得防反射薄膜2能够呈现黑色,本申请择优选用厚度在nm级时能够呈现灰黑色的金属材料以制作防反射薄膜2。Specifically, because the anti-reflection film 2 is a black film, when the exposure light source irradiates the wafer body 1, the anti-reflection film 2 can absorb the light that penetrates the wafer body 1 and reaches the bottom of the wafer body 1, effectively reducing the amount of light passing through the wafer body 1. The amount of light reflected by the bottom of the circular body 1, thereby solving the problem of poor exposure consistency. In order to make the anti-reflection film 2 appear black, the present application preferably uses a metal material that can appear gray-black when the thickness is in the nm order to make the anti-reflection film 2 .

进一步的,考虑到防反射薄膜2主要用于吸收曝光光线,并且经过长时间使用后,防反射薄膜2会发生磨损,因此,防反射薄膜2应选用硬度较大的金属材料制成。优选的,金属材料为金属铬。Further, considering that the anti-reflection film 2 is mainly used for absorbing exposure light, and after a long period of use, the anti-reflection film 2 will be worn, therefore, the anti-reflection film 2 should be made of a metal material with a higher hardness. Preferably, the metal material is metal chromium.

由于防反射薄膜2为金属材料制成的薄膜,故需要采用电子束蒸镀技术或溅射镀膜技术,以将金属铬镀于晶圆本体1的底部。Since the anti-reflection film 2 is made of a metal material, electron beam evaporation technology or sputtering coating technology needs to be used to coat metal chromium on the bottom of the wafer body 1 .

可以了解的是,在向晶圆本体1的底部镀防反射薄膜2的时候,晶圆本体1的底部会由半透明色变为黑色,以便于吸收曝光光线。在镀膜的过程中,当防反射薄膜2的厚度超过5nm时,防反射薄膜2能够完全遮挡晶圆本体1的底部,以使得曝光光线不会透过防反射薄膜2。可以理解的是,对于半导体器件,一般都会要求其质量越轻越好,因此,在镀膜的时候,需要在保证防反射薄膜2完全遮挡晶圆本体1底部的同时,使得防反射薄膜2越薄越好。优选的,防反射薄膜2的厚度以5-8nm为宜。It can be understood that when the anti-reflection film 2 is coated on the bottom of the wafer body 1, the bottom of the wafer body 1 will change from translucent to black, so as to absorb the exposure light. During the coating process, when the thickness of the anti-reflection film 2 exceeds 5 nm, the anti-reflection film 2 can completely block the bottom of the wafer body 1 so that the exposure light will not pass through the anti-reflection film 2 . It can be understood that for semiconductor devices, the lighter the weight is generally required, the better. Therefore, when coating, it is necessary to make the anti-reflection film 2 thinner while ensuring that the anti-reflection film 2 completely covers the bottom of the wafer body 1. the better. Preferably, the thickness of the anti-reflection film 2 is preferably 5-8 nm.

另外,在声表面波滤波器芯片的整个加工工艺过程中,会用到丙酮、无水乙醇、四甲基氢氧化铵水溶液和光刻胶3这四种化学药品。而金属铬是一种不会与上述四种化学药品发生化学反应的金属,因此由金属铬制成的防反射薄膜2具有较好的稳定性。In addition, in the entire processing process of the surface acoustic wave filter chip, four chemicals, acetone, anhydrous ethanol, tetramethylammonium hydroxide aqueous solution and photoresist 3, are used. And metallic chromium is a metal that does not chemically react with the above four chemicals, so the anti-reflection film 2 made of metallic chromium has better stability.

同时,由于防反射薄膜2是由金属铬制成,故与现有技术相比,制作本申请的防反射薄膜2不再需要专用的设备和厂房,以及对相应废液进行处理和排放的步骤,在一定程度上提高了声表面波滤波器芯片加工工艺的环保性。At the same time, since the anti-reflection film 2 is made of metal chromium, compared with the prior art, the production of the anti-reflection film 2 of the present application no longer requires special equipment and workshops, as well as the steps of treating and discharging the corresponding waste liquid. , to a certain extent, the environmental protection of the surface acoustic wave filter chip processing technology is improved.

本申请实施例一种半透明晶圆的实施原理为:通过在半透明晶圆的底面以电子束蒸镀的方式镀一层金属材质的防反射薄膜2,使得防反射薄膜2能够吸收曝光光线,减少反射光的光线量。同时,还能使得晶圆的正面保持平整的状态,以便于进行后续的加工,减小误差,进而降低产品的不合格率。不仅如此,还能够省去多余废液的处理工序和排放工序,以简化工艺步骤,降低工艺成本,使得声表面波滤波器芯片工艺更加环保。The implementation principle of a translucent wafer in the embodiment of the present application is as follows: a metal anti-reflection film 2 is coated on the bottom surface of the translucent wafer by electron beam evaporation, so that the anti-reflection film 2 can absorb the exposure light , reducing the amount of light reflected from the light. At the same time, the front side of the wafer can be kept in a flat state, so as to facilitate subsequent processing, reduce errors, and further reduce the defective rate of products. Not only that, but also the treatment process and discharge process of excess waste liquid can be omitted, so as to simplify the process steps, reduce the process cost, and make the surface acoustic wave filter chip process more environmentally friendly.

本申请实施例还公开一种半透明晶圆曝光过程加工方法。The embodiment of the present application also discloses a method for processing a translucent wafer in an exposure process.

本申请的半透明晶圆过程加工方法包括在晶圆底部镀一层防反射薄膜2。其中,由于防反射薄膜2是由金属材料制成,故需要采用电子束蒸镀技术或者溅射镀膜技术将金属铬镀于晶圆底部。优选的,金属材料为金属铬,以使得镀膜后的晶圆具有较好的耐磨性。在镀膜的过程中,防反射薄膜2要至达到5-8nm的厚度,才能使得防反射薄膜2完全遮挡晶圆的底部,以达到吸收曝光光线的效果。The semi-transparent wafer process processing method of the present application includes coating an anti-reflection film 2 on the bottom of the wafer. Among them, since the anti-reflection film 2 is made of metal material, it is necessary to use electron beam evaporation technology or sputtering coating technology to coat metal chromium on the bottom of the wafer. Preferably, the metal material is metal chromium, so that the coated wafer has better wear resistance. During the coating process, the thickness of the anti-reflection film 2 must reach 5-8 nm, so that the anti-reflection film 2 can completely block the bottom of the wafer, so as to achieve the effect of absorbing the exposure light.

其中,电子束蒸镀技术或溅射镀膜技术为相关领域的常规技术手段,故本申请不再对电子束蒸镀技术或溅射镀膜技术的原理进行详细说明。Among them, the electron beam evaporation technology or the sputtering coating technology is a conventional technical means in the related field, so the principle of the electron beam evaporation technology or the sputtering coating technology will not be described in detail in this application.

另外,本申请的防反射薄膜2不会与丙酮、无水乙醇、四甲基氢氧化铵水溶液和光刻胶3四种化学药品发生化学反应,其能够具有较好的稳定性,同时能够减少工艺步骤,进而降低加工成本。In addition, the anti-reflection film 2 of the present application will not chemically react with four kinds of chemicals: acetone, anhydrous ethanol, tetramethylammonium hydroxide aqueous solution and photoresist 3, which can have better stability and can reduce process steps, thereby reducing processing costs.

以上均为本申请的较佳实施例,并非依此限制本申请的保护范围,故:凡依本申请的结构、形状、原理所做的等效变化,均应涵盖于本申请的保护范围之内。The above are all preferred embodiments of the present application, and are not intended to limit the protection scope of the present application. Therefore: all equivalent changes made according to the structure, shape and principle of the present application should be covered within the scope of the present application. Inside.

Claims (10)

1.一种半透明晶圆曝光过程加工方法,其特征在于:包括在所述晶圆底部镀一层防反射薄膜(2)。1. A method for processing a translucent wafer exposure process, characterized in that: comprising coating a layer of anti-reflection film (2) at the bottom of the wafer. 2.根据权利要求1所述的半透明晶圆曝光过程加工方法,其特征在于:所述防反射薄膜(2)不与特定化学药品发生化学反应,特定化学药品为丙酮、无水乙醇、四甲基氢氧化铵水溶液和光刻胶(3)。2. The translucent wafer exposure process processing method according to claim 1, wherein the anti-reflection film (2) does not chemically react with a specific chemical, and the specific chemical is acetone, anhydrous ethanol, four Aqueous methylammonium hydroxide solution and photoresist (3). 3.根据权利要求2所述的半透明晶圆曝光过程加工方法,其特征在于:所述防反射薄膜(2)由厚度为nm级时呈现灰黑色的金属材料制成。3 . The method for processing a translucent wafer in an exposure process according to claim 2 , wherein the anti-reflection film ( 2 ) is made of a gray-black metallic material with a thickness of nm. 4 . 4.根据权利要求3所述的半透明晶圆曝光过程加工方法,其特征在于:所述金属材料为铬。4 . The method of claim 3 , wherein the metal material is chromium. 5 . 5.根据权利要求4所述的半透明晶圆曝光过程加工方法,其特征在于:所述防反射薄膜(2)的厚度为5-8nm。5 . The method of claim 4 , wherein the thickness of the anti-reflection film ( 2 ) is 5-8 nm. 6 . 6.根据权利要求5所述的半透明晶圆曝光过程加工方法,其特征在于:所述防反射薄膜(2)通过电子束蒸镀技术或溅射镀膜技术制成。6 . The method according to claim 5 , wherein the anti-reflection film ( 2 ) is made by electron beam evaporation technology or sputtering coating technology. 7 . 7.一种半透明晶圆,其特征在于:包括晶圆本体(1),所述晶圆本体(1)的底部镀有一层防反射薄膜(2)。7. A translucent wafer, characterized in that it comprises a wafer body (1), and the bottom of the wafer body (1) is coated with a layer of anti-reflection film (2). 8.根据权利要求7所述的半透明晶圆,其特征在于:所述防反射薄膜(2)不与特定化学药品发生化学反应,特定化学药品为丙酮、无水乙醇、四甲基氢氧化铵水溶液和光刻胶(3)。8. The translucent wafer according to claim 7, wherein the anti-reflection film (2) does not chemically react with a specific chemical, and the specific chemical is acetone, anhydrous ethanol, tetramethyl hydroxide Aqueous ammonium solution and photoresist (3). 9.根据权利要求8所述的半透明晶圆,其特征在于:所述防反射薄膜(2)由金属铬制成。9 . The translucent wafer according to claim 8 , wherein the anti-reflection film ( 2 ) is made of metallic chromium. 10 . 10.根据权利要求9所述的半透明晶圆,其特征在于:所述防反射薄膜(2)的厚度为5-8nm。10 . The translucent wafer according to claim 9 , wherein the thickness of the anti-reflection film ( 2 ) is 5-8 nm. 11 .
CN202210086229.6A 2022-01-25 2022-01-25 A kind of translucent wafer and exposure process processing method thereof Pending CN114545740A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045125A (en) * 1974-06-27 1977-08-30 Etat Francias Band filters for use in protective glasses
CN108624844A (en) * 2017-03-17 2018-10-09 株洲中车时代电气股份有限公司 A kind of wafer rear metallic film and preparation method thereof
CN112397569A (en) * 2020-10-30 2021-02-23 广东广纳芯科技有限公司 Wafer with back metal layer for surface acoustic wave filter and manufacturing method thereof
CN113726302A (en) * 2021-07-28 2021-11-30 厦门市三安集成电路有限公司 Manufacturing method of interdigital transducer of surface acoustic wave filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045125A (en) * 1974-06-27 1977-08-30 Etat Francias Band filters for use in protective glasses
CN108624844A (en) * 2017-03-17 2018-10-09 株洲中车时代电气股份有限公司 A kind of wafer rear metallic film and preparation method thereof
CN112397569A (en) * 2020-10-30 2021-02-23 广东广纳芯科技有限公司 Wafer with back metal layer for surface acoustic wave filter and manufacturing method thereof
CN113726302A (en) * 2021-07-28 2021-11-30 厦门市三安集成电路有限公司 Manufacturing method of interdigital transducer of surface acoustic wave filter

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Application publication date: 20220527