[go: up one dir, main page]

CN114545734A - Solder-resisting dry film photoresist, preparation method and application thereof - Google Patents

Solder-resisting dry film photoresist, preparation method and application thereof Download PDF

Info

Publication number
CN114545734A
CN114545734A CN202210223873.3A CN202210223873A CN114545734A CN 114545734 A CN114545734 A CN 114545734A CN 202210223873 A CN202210223873 A CN 202210223873A CN 114545734 A CN114545734 A CN 114545734A
Authority
CN
China
Prior art keywords
dry film
photoresist layer
photoresist
layer
solder resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202210223873.3A
Other languages
Chinese (zh)
Other versions
CN114545734B (en
Inventor
杜永杰
邓晓明
张卫国
彭威
杨炀
李智新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuhai Dynamic Technology Optical Industry Co ltd
Original Assignee
Zhuhai Dynamic Technology Optical Industry Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhuhai Dynamic Technology Optical Industry Co ltd filed Critical Zhuhai Dynamic Technology Optical Industry Co ltd
Priority to CN202210223873.3A priority Critical patent/CN114545734B/en
Publication of CN114545734A publication Critical patent/CN114545734A/en
Application granted granted Critical
Publication of CN114545734B publication Critical patent/CN114545734B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Materials For Photolithography (AREA)

Abstract

The invention discloses a solder resist dry film photoresist, a preparation method and application thereof, and belongs to the technical field of circuit board production and manufacturing. The solder resist dry film photoresist has a 3-layer structure, namely a photoresist layer 1, a photoresist layer 2 and a photoresist layer 3; wherein the photoresist layer 1 contains epoxy acrylate main body resin, a photo-curable monomer, a thermal curing catalyst and a free radical initiator; the photoresist layer 2 contains acrylic ester compound with carboxyl, thermosetting resin with thermosetting functional group, photopolymerization monomer with at least two photocurable unsaturated functional groups, photoinitiator and thermosetting catalyst; the photoresist layer 3 contains a carboxyl group-containing polymer binder, a photopolymerizable monomer, a thermal polymerization inhibitor, and a radical photoinitiator. The solder resist dry film photoresist provided by the invention can be combined with a solder resist dry film and a dry film photoresist with high resolution to form a dry film with better performances in all aspects.

Description

Solder-resisting dry film photoresist, preparation method and application thereof
Technical Field
The invention belongs to the technical field of circuit board production and manufacturing, and particularly relates to a solder resist dry film photoresist, and a preparation method and application thereof.
Background
The components of the dry film photoresist generally comprise a high molecular adhesive, a photopolymerization monomer, a thermal polymerization inhibitor and a free radical photoinitiator. The dry film can be developed with an aqueous solution because the polymeric binder is a film-formable polymeric binder containing carboxyl groups, which are commonly sold as a dry film roll with the components sandwiched between a flexible support film and a cover film.
The polymerizable composition is transported as a dry film and is often affected by cold flow, i.e. the composition flows under pressure, i.e. the resist flows locally and causes a non-uniform thickness. This results in the edge component materials of the roll fusing together, i.e., producing a gummy. The degree of flow is dependent on the viscosity of the photopolymerizable component, and it is advantageous to increase the viscosity of the photopolymerizable component appropriately in order to prevent or reduce flow caused by fusion of the edge components.
Dry film photoresists are polymerizable components used in the production of printed wiring boards, and also have a desirable aspect of good flexibility. The better the flexibility of the film in the polymerized state, the less likely the printed board will cause cracking and peeling of the film from the board when bent or slit.
Besides the above-mentioned advantages, the dry film photoresist for solder resist also has the advantages of solder resist, insulation, corrosion resistance, oxidation resistance, certain pencil hardness and electric properties.
At present, solder resist ink or a dry solder resist film mainly has solder resist, insulation, corrosion resistance and oxidation resistance, but has poor performances in other aspects such as adhesion and resolution, so that almost no solder resist is used as a solder resist for an ultrahigh resolution fine circuit at present.
Disclosure of Invention
In order to solve the technical problems, the invention provides a resistance welding dry film photoresist with a multilayer structure, which has a three-layer structure, specifically a photoresist layer 1, a photoresist layer 2 and a photoresist layer 3, wherein the upper photoresist layer contains epoxy acrylate main resin, a photo-curable monomer, a thermal curing catalyst and a free radical initiator; the photoresist layer 2 contains a mixture of photocurable and thermally curable resins, photopolymerizable monomers having at least two photocurable unsaturated functional groups, a photoinitiator, a thermal curing catalyst, a dye or a pigment; the lower photoresist layer contains carboxyl polymer adhesive, photopolymerization monomer, thermal polymerization inhibitor and free radical photoinitiator.
The thickness of the photoresist layer 1 is 5-15 μm, the thickness of the photoresist layer 2 is 10-50 μm, and the thickness of the photoresist layer 3 is 5-15 μm. Meanwhile, a PE film is arranged on the outer side of the photoresist layer 1, the thickness of the PE film is 10-50 mu m, a PET film is arranged on the outer side of the photoresist layer 3, the thickness of the PET film is 10-30 mu m, and the specific structure is shown in figure 1. The main function of PE and PET films is to protect and support the photoresist layer.
The solid acid value of the acrylate main body resin of the multilayer structure photoresist layer provided by the invention is increased from bottom to top in sequence, namely the solid acid value of the photoresist layer 1 is greater than that of the photoresist layer 2 is greater than that of the photoresist layer 3. When the multilayer structure dry film photoresist is attached to a substrate, a PE film is torn off, and then a photoresist layer 1 is contacted with the substrate for pressing, and the specific structure is shown in figure 2, so that the photoresist layer 1 is a bottom layer when the dry film photoresist is applied, and higher acid value is needed to ensure the developing efficiency and resolution.
Meanwhile, in order to ensure the deep layer photocuring effect of the bottom, the photoresist layer 3 is mainly designed to be transparent and high in gloss, and the photocrosslinking degree of the photoresist layer is slightly lower than that of other photoresist layers, so that light can penetrate the bottom more easily, the bottom curing degree is higher, the adhesion force is favorably improved, the photoresist layer 2 is a main solder mask layer, the main design is that the performances such as bright color, electricity and solder mask are used, and the photoresist layer 1 mainly plays a role in improving the bonding force and the resolution capability of the solder mask layer and the surface of the substrate.
The multifunctional photopolymerization monomer (containing two or more than two vinyl double bonds) can improve the crosslinking density and strength and other properties in the cured film. Commonly used multifunctional monomers include: trimethylolpropane triacrylate (TMPTA), dipentaerythritol pentaacrylate (DPPA), ditrimethylolpropane tetraacrylate (DTMPTA), hexafunctional polyester acrylate (PEA), tetrafunctional polyester acrylate (PEA), triethylene glycol diacrylate (TEGDA).
Free radical photoinitiators are conventional photoinitiators, which are activated by actinic radiation to generate free radicals, and are stable to heat below 185 ℃. The photoinitiator comprises one or more of the following compounds: benzoin compounds, acetophenone compounds, anthraquinones compounds, thioxanthone compounds, ketal compounds, benzophenone compounds, a-aminoacetophenone compounds, acylphosphine oxide, oxime ester compounds, bisimidazole compounds and triazine compounds.
The thermal curing catalyst comprises one or more of the following compounds: imidazole derivatives, amine compounds, hydrazine compounds, phosphine compounds.
The polymeric binder capable of forming a film having carboxyl functionality is synthesized from one or more vinylic monomers and one or more α, β -vinylic unsaturated carboxyl-containing monomers having from 3 to 15 carbon atoms, the resulting binder being water-soluble. Examples of vinylic monomers are alkanes and hydroxyalkyl acrylates and methacrylates having 3 to 15 carbon atoms, styrene and alkyl-substituted styrenes. Acrylates and methacrylates are preferred. Examples of the monomer containing a carboxyl group are cinnamic acid, crotonic acid, fumaric acid, sorbic acid, acrylic acid, methacrylic acid, itaconic acid, propiolic acid, maleic acid, and anhydrides thereof. Among them, acrylic acid and methacrylic acid are preferred.
The heat-curable resin having a heat-curable functional group contains one or more compounds selected from the group consisting of amino groups: urea-formaldehyde resins, melamine-formaldehyde resins, alkyl melamine-formaldehyde resins and copolycondensation resins.
The thermal polymerization inhibitor is used to prevent the photoresist from thermal polymerization during drying and storage. Thermal polymerization inhibitors include p-methoxyphenol, hydroquinone, alkyl and aryl substituted hydroquinones and quinones, t-butyl catechol, pyrogallol, cupresinate, beta-naphthol, 2, 6-di-t-butyl-p-cresol, 2, 2' -methylene-bis (4-ethyl-6-t-butyl-phenol), p-toluquinone, tetrachlorobenzoquinone, aryl phosphites, and alkylaryl phosphites.
There are also optional additives in the photoresist to the photopolymerizable component, such as: leuco dye, ground dye, adhesion promoter, antioxidant, etc. These are mentioned in the disclosure, but are not necessarily essential to the invention.
The basic photopolymerizable component is prepared by mixing a series of different compounds with a solvent and stirring the mixture uniformly. The solvents used generally include: alcohols, ketones, halogenated hydrocarbons, ethers, and the like. After mixing uniformly, coating the photopolymerization component on a layer of flexible carrier film, evaporating the solvent, then coating a next layer of photopolymerization component until the coating of the multilayer structure dry film photoresist is completed, and finally covering a layer of protective film.
In the present invention, the photopolymerizable composition is used as a photoresist in the production of printed wiring boards, generally, the composition is pressed onto the copper layer surface of a copper foil substrate, exposed through a negative film to form a latent image under ultraviolet irradiation, and then developed in a known aqueous developer to remove unpolymerized composition from the copper surface to form a bare copper surface, and the copper thin layers are processed by known means, such as electroplating or etching procedures, and the polymerized material now protects the copper layer it covers.
The photopolymerizable composition of the invention is thermally pressed onto the copper foil substrate by a known method such as a hot plate or a hot barrel laminator together with the carrier film after the cover film is removed, and the carrier film is removed at the time of development after exposure polymerization. In general, forThe component has a polymerized light amount of about 35 to 150mj/cm2The precise amount of light depends on the particular composition and the type of film being exposed, among other factors.
The copper foil base is any known copper/insulation laminate used in the production of circuit boards, such as a glass fiber reinforced ethylene oxide resin copper foil laminate.
The aqueous developer used in the present invention is an alkaline agent having a concentration of 0.5 to 10% by weight, preferably 0.5 to 1% by weight. The latent image is in the solution for a time sufficient to wash away unpolymerized components. The alkaline agents used are alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, potassium hydroxide, and alkali metal salts which react with weak acids such as sodium carbonate, sodium bicarbonate and alkali metal phosphates and pyrophosphates, sodium carbonate being preferred.
Compared with the prior art, the invention has the following beneficial effects:
the solder resist dry film photoresist provided by the invention can be combined with a solder resist dry film and a dry film photoresist with high resolution to form a dry film with better performances in all aspects.
Drawings
FIG. 1 is a structural diagram of a solder resist dry film photoresist of the present invention.
FIG. 2 is a structural diagram of the solder resist dry film resist of the present invention after being laminated with a substrate.
Detailed Description
Example 1
A preparation method of a solder resist dry film photoresist comprises the following steps:
(1) all photopolymerizable components were added to the compounding apparatus according to the formulations of 3A and 3B in Table 1 and stirred uniformly at room temperature (below 25 ℃ C.) at a mechanical stirring speed of 1000rpm to form a coating solution. And uniformly coating the coating liquid on a polyester film (PET), and then putting the PET in an oven at 110 ℃ for drying for 5min to volatilize the solvent to prepare the photoresist layer 3.
TABLE 1 formulation of coating solution for Photoresist layer 3
Figure BDA0003538492710000041
(2) All photopolymerizable components were added to the compounding apparatus according to the formulations of 2A and 2B in Table 2 and stirred uniformly at room temperature (below 25 ℃ C.) to form a coating solution with a mechanical stirring speed of 1000 rpm. The coating liquid was uniformly applied to the photoresist layer 3, and then placed in an oven at 110 ℃ for 5min to evaporate the solvent.
TABLE 2 coating liquid formulation for photoresist layer 2
Figure BDA0003538492710000051
DPHA is dipentaerythritol pentaacrylate.
(3) All photopolymerizable components were added to the compounding apparatus according to the formulations 1A and 1B in Table 3 and stirred uniformly at room temperature (below 25 ℃ C.) to form a coating solution with a mechanical stirring speed of 1000 rpm. And uniformly coating the coating liquid on the photoresist layer 2, then placing the photoresist layer in an oven at 110 ℃ for drying for 5min to volatilize the solvent, and covering a protective film PE to control the coating thickness of the photoresist within the range of 20-80 mu m.
TABLE 3 recipe of coating liquid for photoresist layer 1
Figure BDA0003538492710000052
Figure BDA0003538492710000061
Examples 2 to 8
Examples 2-8 solder resist dry film photoresists were prepared as in example 1, with specific components in Table 4, wherein 1A, 1B are as in Table 3; 2A and 2B are as in Table 2; 3A and 3B are as in Table 1.
TABLE 4
Figure BDA0003538492710000062
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solutions of the present invention can be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are within the scope of the present invention defined by the claims.

Claims (10)

1. A solder resist dry film photoresist is characterized in that the solder resist dry film photoresist has a 3-layer structure, namely a photoresist layer 1, a photoresist layer 2 and a photoresist layer 3.
2. The resist dry film photoresist of claim 1, wherein the photoresist layer 1 contains an epoxy acrylate host resin, a photocurable monomer, a thermal curing catalyst and a radical initiator.
3. The resist dry film photoresist of claim 2, wherein the photoresist layer 2 contains an acrylate compound of a carboxyl group, a thermosetting resin having a thermosetting functional group, a photopolymerizable monomer having at least two photocurable unsaturated functional groups, a photoinitiator, a thermosetting catalyst.
4. The resist solder resist dry film photoresist of claim 3, wherein the acrylate compound containing a carboxyl group comprises an epoxy (meth) acrylate compound, a silicone (meth) acrylate compound, a hydroxyl group-containing (meth) acrylate compound, a urethane (meth) acrylate compound, a caprolactone-modified (meth) acrylate compound.
5. The resist dry film resist according to claim 4, wherein the content of the acrylate compound having a carboxyl group in the resist layer 2 is 15 to 75 wt%; the weight average molecular weight of the carboxyl group-containing acrylate compound was 5000-.
6. The resist solder resist dry film photoresist according to claim 5, wherein the thermosetting resin having a thermosetting functional group is one or more of urea resin, melamine formaldehyde resin, hydrocarbon-based melamine formaldehyde resin and copolycondensation resin.
7. The resist dry film photoresist according to claim 6, wherein the photopolymerizable monomer having at least two photocurable unsaturated functional groups is a compound having two or more vinyl functional groups in a molecule, a (meth) acrylate compound having two or more (meth) acryloyl groups in a molecule; the content of the photo-polymerization monomer having at least two photo-curable unsaturated functional groups in the photoresist layer 2 is 5-30 wt%.
8. The resist composition dry film resist according to claim 7, wherein the resist layer 3 comprises a carboxyl group-containing polymer binder, a photopolymerizable monomer, a thermal polymerization inhibitor, a radical photoinitiator.
9. The method for preparing the solder resist dry film photoresist of any one of claims 1 to 7, comprising the steps of:
(1) adding the components required for preparing the photoresist layer 3 into a preparation device, stirring the components uniformly at room temperature to form a coating liquid, uniformly coating the coating liquid on a polyester film PET, and drying the polyester film PET to volatilize the solvent to obtain the photoresist layer 3;
(2) adding the components required for preparing the photoresist layer 2 into a preparation device, stirring the components uniformly at room temperature to form a coating liquid, uniformly coating the coating liquid on the photoresist layer 3, and drying the coating liquid to volatilize the solvent to obtain the photoresist layer 2;
(3) adding the components required for preparing the photoresist layer 1 into a preparation device, stirring the components uniformly at room temperature to form a coating liquid, uniformly coating the coating liquid on the photoresist layer 2, drying the coating liquid to volatilize the solvent, and covering a layer of protective film PE.
10. Use of the solder resist dry film photoresist of any one of claims 1 to 7 in the production and fabrication of wiring boards.
CN202210223873.3A 2022-03-09 2022-03-09 Solder-resisting dry film photoresist, preparation method and application thereof Active CN114545734B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210223873.3A CN114545734B (en) 2022-03-09 2022-03-09 Solder-resisting dry film photoresist, preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210223873.3A CN114545734B (en) 2022-03-09 2022-03-09 Solder-resisting dry film photoresist, preparation method and application thereof

Publications (2)

Publication Number Publication Date
CN114545734A true CN114545734A (en) 2022-05-27
CN114545734B CN114545734B (en) 2022-08-12

Family

ID=81664545

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210223873.3A Active CN114545734B (en) 2022-03-09 2022-03-09 Solder-resisting dry film photoresist, preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN114545734B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116755290A (en) * 2023-05-17 2023-09-15 珠海市能动科技光学产业有限公司 High-adhesion dry film resist for solder resist, and preparation method and application thereof
NL2032627B1 (en) * 2022-07-28 2023-11-10 Zhuhai Nengdong Tech Optical Industry Co Ltd Resistance welding dry film photoresist as well as preparation method use thereof

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349620A (en) * 1979-06-15 1982-09-14 E. I. Du Pont De Nemours And Company Solvent developable photoresist film
JPH0566568A (en) * 1991-09-06 1993-03-19 Kawasaki Steel Corp Manufacture of multiple contrast register pattern and multi-layered resist
JPH05299337A (en) * 1992-04-20 1993-11-12 Nec Corp Forming method for multilayered resist film
JP2005148236A (en) * 2003-11-12 2005-06-09 Fuji Photo Film Co Ltd Dry film photoresist
US20080044761A1 (en) * 2006-06-22 2008-02-21 Kyoung-Keun Son Multilayer Dry Film Resist, Method of Manufacturing the Resist, and Method of Manufacturing Display Plate for Liquid Crystal Display Panel Using the Resist
US20100218984A1 (en) * 2006-01-25 2010-09-02 Toshio Yamanaka Photosensitive dry film resist, printed wiring board making use of the same, and process for producing printed wiring board
CN102804066A (en) * 2010-03-22 2012-11-28 株式会社Lg化学 Light-curing and heat-curing resin composition and solder mask dry film
CN102903629A (en) * 2011-07-27 2013-01-30 台湾积体电路制造股份有限公司 Photoactive compound gradient photoresist
US20140106278A1 (en) * 2012-10-17 2014-04-17 Samsung Electro-Mechanics Co., Ltd. Dry film resist sheet and method of manufacturing the same
CN104536266A (en) * 2015-01-30 2015-04-22 杭州福斯特光伏材料股份有限公司 Dry film photoresist lamination body
CN105511227A (en) * 2015-12-26 2016-04-20 杭州福斯特光伏材料股份有限公司 Dry film resist with good hole shielding function and laminated body thereof
CN108350107A (en) * 2016-02-05 2018-07-31 株式会社Lg化学 Photocurable and heat curable resin composition and dry film of solder mask
CN110941141A (en) * 2019-12-28 2020-03-31 珠海市能动科技光学产业有限公司 Aqueous solution developing dry film photoresist
CN112034685A (en) * 2020-09-01 2020-12-04 珠海市能动科技光学产业有限公司 High-resolution dry film photoresist

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349620A (en) * 1979-06-15 1982-09-14 E. I. Du Pont De Nemours And Company Solvent developable photoresist film
JPH0566568A (en) * 1991-09-06 1993-03-19 Kawasaki Steel Corp Manufacture of multiple contrast register pattern and multi-layered resist
JPH05299337A (en) * 1992-04-20 1993-11-12 Nec Corp Forming method for multilayered resist film
JP2005148236A (en) * 2003-11-12 2005-06-09 Fuji Photo Film Co Ltd Dry film photoresist
US20100218984A1 (en) * 2006-01-25 2010-09-02 Toshio Yamanaka Photosensitive dry film resist, printed wiring board making use of the same, and process for producing printed wiring board
US20080044761A1 (en) * 2006-06-22 2008-02-21 Kyoung-Keun Son Multilayer Dry Film Resist, Method of Manufacturing the Resist, and Method of Manufacturing Display Plate for Liquid Crystal Display Panel Using the Resist
CN102804066A (en) * 2010-03-22 2012-11-28 株式会社Lg化学 Light-curing and heat-curing resin composition and solder mask dry film
CN102903629A (en) * 2011-07-27 2013-01-30 台湾积体电路制造股份有限公司 Photoactive compound gradient photoresist
US20140106278A1 (en) * 2012-10-17 2014-04-17 Samsung Electro-Mechanics Co., Ltd. Dry film resist sheet and method of manufacturing the same
CN104536266A (en) * 2015-01-30 2015-04-22 杭州福斯特光伏材料股份有限公司 Dry film photoresist lamination body
CN105511227A (en) * 2015-12-26 2016-04-20 杭州福斯特光伏材料股份有限公司 Dry film resist with good hole shielding function and laminated body thereof
CN108350107A (en) * 2016-02-05 2018-07-31 株式会社Lg化学 Photocurable and heat curable resin composition and dry film of solder mask
US20190056658A1 (en) * 2016-02-05 2019-02-21 Lg Chem, Ltd. Photo-curable and heat-curable resin composition and dry film solder resist
CN110941141A (en) * 2019-12-28 2020-03-31 珠海市能动科技光学产业有限公司 Aqueous solution developing dry film photoresist
CN112034685A (en) * 2020-09-01 2020-12-04 珠海市能动科技光学产业有限公司 High-resolution dry film photoresist

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2032627B1 (en) * 2022-07-28 2023-11-10 Zhuhai Nengdong Tech Optical Industry Co Ltd Resistance welding dry film photoresist as well as preparation method use thereof
CN116755290A (en) * 2023-05-17 2023-09-15 珠海市能动科技光学产业有限公司 High-adhesion dry film resist for solder resist, and preparation method and application thereof

Also Published As

Publication number Publication date
CN114545734B (en) 2022-08-12

Similar Documents

Publication Publication Date Title
CN114545734B (en) Solder-resisting dry film photoresist, preparation method and application thereof
JP4752656B2 (en) Photosensitive resin composition, photosensitive element, resist pattern forming method using these, and printed wiring board manufacturing method
US20150241772A1 (en) Double coated negative-working dry-film photoresist
JP3750101B2 (en) Photosensitive resin composition and printed wiring board
CN108255014B (en) A kind of dry film photoresist containing modified polyurethane and photo-curing monomer
JPH01229242A (en) Photosensitive resin composition
CN112034685B (en) High-resolution dry film photoresist
JP2963772B2 (en) Photosensitive resin composition
JP2898143B2 (en) Photosensitive liquid composition, photosensitive film and laminate
CN112159639A (en) Modified high-molecular adhesive and dry film photoresist containing same
JP2008304527A (en) Photosensitive resin composition, photosensitive element using same, resist pattern forming method, and method for manufacturing printed wiring board
EP0206030B1 (en) Photocurable composition
JP2719799B2 (en) Photosensitive resin composition
NL2032627B1 (en) Resistance welding dry film photoresist as well as preparation method use thereof
CN102650825B (en) Dry film photoresist containing adhesive additive and plasticizer
JP2004198673A (en) Photosensitive resin composition
CN114230709A (en) Organic silicon modified resin and application thereof
JP2008286852A (en) Photosensitive resin composition, photosensitive element, resist pattern forming method, and method for manufacturing printed wiring board
CN112578633B (en) Photoresist
JP2000330272A (en) Photosensitive resin composition for photosensitive film and photosensitive film
US20090191491A1 (en) Method of Creating an Image in a Photoresist Laminate
JP2004004263A (en) Solder resist composition, dry film, and method for forming resist pattern
CN115047713A (en) Dry film photoresist and preparation method and application thereof
US5601965A (en) Increasing adhesion of dry film photopolymerizable compositions
JP4147508B2 (en) Photosensitive resin composition and photosensitive film using the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant