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CN114520633A - Doherty power amplifier based on small-sized orthogonal signal generator - Google Patents

Doherty power amplifier based on small-sized orthogonal signal generator Download PDF

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Publication number
CN114520633A
CN114520633A CN202210089555.2A CN202210089555A CN114520633A CN 114520633 A CN114520633 A CN 114520633A CN 202210089555 A CN202210089555 A CN 202210089555A CN 114520633 A CN114520633 A CN 114520633A
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quadrant
metal layer
fracture
route segment
segment
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李斯
贾浩阳
李俊
王彦杰
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South China University of Technology SCUT
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F30/00Fixed transformers not covered by group H01F19/00
    • H01F30/02Auto-transformers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a Doherty power amplifier based on a small-sized orthogonal signal generator, relates to a microelectronic circuit, and aims to solve the problem of miniaturization of the orthogonal signal generator. The orthogonal signal generator comprises four layers of metals which are sequentially stacked from top to bottom: the second metal layer forms an I-path differential signal output circuit with an annular structure, and a fracture is formed for line segments which are in cross interference in the same plane to pass through; the third metal layer forms a Q-path differential signal output circuit with an annular structure, and a fracture is formed for the crossed and interfered line segments in the same plane to pass through; the first metal layer and the fourth metal layer are provided with a plurality of cross-line segments for connecting two ends of each fracture; the annular structure of the third metal layer is superposed with the annular structure of the second metal layer in the vertical direction, and each cross line segment of the first metal layer is superposed with the cross line segment of the fourth metal layer in the vertical direction. The transformer has the advantages that the area is reduced by a half, the coupling coefficient of the transformer is increased, and the loss is reduced.

Description

一种基于小型正交信号产生器的Doherty功率放大器A Doherty Power Amplifier Based on Small Quadrature Signal Generator

技术领域technical field

本发明涉及涉及微电子电路,尤其涉及一种基于小型正交信号产生器的Doherty功率放大器。The invention relates to microelectronic circuits, in particular to a Doherty power amplifier based on a small quadrature signal generator.

背景技术Background technique

功率放大器通常是无线收发机中耗电最大的模块,它的性能基本决定了整个无线发射机系统的能源效率和线性度。随着无线通信技术的发展,人们利用丰富的毫米波频谱资源以实现无线系统的高数据速率。为了获得更大的数据传输速率,通常采用了高阶的正交频分复用和正交幅度调制等。然而,由此产生的高峰值平均功率比对功率放大器的功率回退效率提出了严格的要求,以及在其幅度和相位响应的宽功率范围内的高线性度要求,以确保信号不失真的传输。功率放大器作为无线通信系统前端最重要的模块之一,其功率回退效率大大影响着系统的效率。在各种功率回退效率增强技术中,Doherty技术被认为是最有前景的选择之一,它支持5G应用中的宽带调制,经由主路功率放大器和辅路功率放大器的协同设计,通过有源负载调制来提高功率回退效率。为了满足5G通信系统所要求的低延时、大带宽等要求,毫米波和太赫兹技术将会被广泛应用,从而实现万物互联。The power amplifier is usually the most power-consuming module in the wireless transceiver, and its performance basically determines the energy efficiency and linearity of the entire wireless transmitter system. With the development of wireless communication technology, people utilize abundant millimeter-wave spectrum resources to achieve high data rates of wireless systems. In order to obtain a larger data transmission rate, high-order orthogonal frequency division multiplexing and orthogonal amplitude modulation are usually used. However, the resulting high peak-to-average power ratio places stringent requirements on the power back-off efficiency of the power amplifier, as well as high linearity requirements over a wide power range of its amplitude and phase response to ensure signal-free transmission . As one of the most important modules in the front-end of a wireless communication system, the power back-off efficiency of the power amplifier greatly affects the efficiency of the system. Among various power back-off efficiency enhancement technologies, Doherty technology is considered to be one of the most promising options. It supports broadband modulation in 5G applications, through the co-design of the main and auxiliary power amplifiers, through the active load modulation to improve power back-off efficiency. In order to meet the requirements of low latency and large bandwidth required by 5G communication systems, millimeter wave and terahertz technologies will be widely used to realize the interconnection of everything.

在保证输出功率、效率、线性度等基本指标的前提下,Doherty功率放大器的面积一直是功放设计的重难点。为了把Doherty功放应用于系统中,其小型化势在必行。过去的十年中,硅基毫米波Doherty功率放大器取得了重大进展,其输入端的正交信号产生电路通常采用1/4波长传输线、兰格耦合器、多相滤波器等结构,这些结构都占据了较大的芯片面积,从而使得整体Doherty功放的芯片面积较大。如何实现小型化正交信号产生器对小型化Doherty功率放大器具有重要的意义。On the premise of ensuring basic indicators such as output power, efficiency, and linearity, the area of Doherty power amplifiers has always been a difficult point in power amplifier design. In order to apply the Doherty amplifier to the system, its miniaturization is imperative. In the past decade, silicon-based millimeter-wave Doherty power amplifiers have made significant progress, and the quadrature signal generation circuit at the input usually adopts 1/4 wavelength transmission line, Lange coupler, polyphase filter and other structures, which occupy the A larger chip area is required, so that the overall Doherty power amplifier has a larger chip area. How to realize the miniaturized quadrature signal generator is of great significance to the miniaturization of Doherty power amplifier.

发明内容SUMMARY OF THE INVENTION

本发明目的在于提供一种基于小型正交信号产生器的Doherty功率放大器,以解决上述现有技术存在的问题。The purpose of the present invention is to provide a Doherty power amplifier based on a small quadrature signal generator to solve the above-mentioned problems in the prior art.

本发明所述一种基于小型正交信号产生器的Doherty功率放大器,其正交信号产生器的I路差分信号经过主路放大后进入输出功率合成器的I路输入,而Q路差分信号经过辅路放大后进入Q路输入,所述输出功率合成器将放大后的I路差分信号和Q路差分信号合成并对外输出;In the Doherty power amplifier based on a small quadrature signal generator according to the present invention, the I-channel differential signal of the quadrature signal generator is amplified by the main circuit and then enters the I-channel input of the output power combiner, while the Q-channel differential signal passes through After the auxiliary circuit is amplified, it enters the Q-channel input, and the output power combiner synthesizes the amplified I-channel differential signal and the Q-channel differential signal and outputs it externally;

所述的正交信号产生器由上至下依次层叠的第一金属层、第二金属层、第三金属层及第四金属层组成,其中第一金属层与第二金属层电性连接、第二金属层与第三金属层绝缘连接、第三金属层与第四金属层电性连接:The quadrature signal generator is composed of a first metal layer, a second metal layer, a third metal layer and a fourth metal layer stacked in sequence from top to bottom, wherein the first metal layer is electrically connected to the second metal layer, The second metal layer is insulated and connected to the third metal layer, and the third metal layer is electrically connected to the fourth metal layer:

所述第二金属层形成环状结构的I路差分信号输出线路,且设有断口供同一平面中相交干涉的线段穿过;The second metal layer forms an I-channel differential signal output line of a ring structure, and is provided with a fracture for the intersecting and interfering line segments in the same plane to pass through;

所述第三金属层形成环状结构的Q路差分信号输出线路,且设有断口供同一平面中相交干涉的线段穿过;The third metal layer forms a Q-channel differential signal output line of a ring structure, and is provided with a fracture for the intersecting and interfering line segments in the same plane to pass through;

所述第一金属层设置多条跨线段用于一一对应地接驳第二金属层各断口两端;The first metal layer is provided with a plurality of spanning line segments for connecting two ends of each fracture of the second metal layer in a one-to-one correspondence;

所述第四金属层设置多条跨线段用于一一对应地接驳第三金属层各断口两端;The fourth metal layer is provided with a plurality of spanning line segments for connecting two ends of each fracture of the third metal layer in a one-to-one correspondence;

第三金属层的环状结构与第二金属层的环状结构在垂直方向重合,以及第一金属层各跨线段与第四金属层的跨线段在垂直方向重合。The annular structure of the third metal layer overlaps with the annular structure of the second metal layer in the vertical direction, and each spanning line segment of the first metal layer overlaps the spanning line segment of the fourth metal layer in the vertical direction.

所述的I路差分信号线路在正交信号产生器中部形成部分重叠。The I-channel differential signal lines are partially overlapped in the middle of the quadrature signal generator.

所述的I路差分信号线路为1.5圈的环状结构。The I-channel differential signal line is a 1.5-turn ring-shaped structure.

所述的第二金属层包括位于第一象限外圈的第一I路线段、由第四象限中圈经第三象限内圈延伸至第二象限内圈的第二I路线段、由第一象限中圈延伸至第四象限外圈的第三I路线段、由第二象限外圈延伸至第三象限中圈的第四I路线段、由第二象限中圈经第一象限内圈延伸至第四象限内圈的第五I路线段、以及位于第三象限外圈的第六I路线段;其中第一I路线段远离第一输入引线的端部延伸出第一I路输出引线,远离第一I路输出引线的端部与第二I路线段位于第四象限的端部之间形成第一顶层断口;第五I路线段位于第四象限的端部与第四I路线段位于第三象限的端部之间形成第二顶层断口,第四I路线段位于第一象限的端部延伸出第二I路输出引线;第六I路线段远离第二I路输出引线的端部延伸出第二输入引线,远离第二输入引线的端部与第五I路线段位于第二象限的端部之间形成第三顶层断口;第三I路线段远离第一I路输出引线的端部延伸出第一输入引线,远离第一输入引线的端部与第二I路线段位于第二象限的端部之间形成第四顶层断口;The second metal layer includes a first I route segment located in the outer circle of the first quadrant, a second I route segment extending from the fourth quadrant middle circle to the second quadrant inner circle through the third quadrant inner circle, and from the first The third I route segment extending from the middle quadrant circle to the fourth quadrant outer circle, the fourth I route segment extending from the second quadrant outer circle to the third quadrant middle circle, and extending from the second quadrant middle circle through the first quadrant inner circle to the fifth I route segment in the inner circle of the fourth quadrant, and the sixth I route segment located in the outer circle of the third quadrant; wherein the first I route segment extends away from the end of the first input lead out of the first I route output lead, A first top layer fracture is formed between the end of the output lead far away from the first I route and the end of the second I route segment located in the fourth quadrant; the fifth I route segment is located at the end of the fourth quadrant and the fourth I route segment is located in the fourth quadrant. A second top layer fracture is formed between the ends of the third quadrant, the fourth I route segment is located at the end of the first quadrant and extends out the second I-way output lead; the sixth I route segment is far from the end of the second I-way output lead The second input lead is extended, and a third top layer fracture is formed between the end of the second input lead and the end of the fifth I route segment located in the second quadrant; the third I route segment is far away from the end of the first I route output lead The first input lead is extended from the first input lead, and a fourth top layer fracture is formed between the end away from the first input lead and the end of the second I route segment located in the second quadrant;

所述的第一金属层包括用于接驳所述第一顶层断口的第一顶层跨线段,用于接驳所述第二顶层断口的第二顶层跨线段,用于接驳所述第三顶层断口的第三顶层跨线段,以及用于接驳所述第四顶层断口的第四顶层跨线段;The first metal layer includes a first top layer jumper segment for connecting to the first top layer fracture, a second top layer jumper segment for connecting to the second top layer fracture, and a second top layer jumper for connecting to the third top layer. a third top-level spanning line segment of the top-level fracture, and a fourth top-level spanning line segment for connecting the fourth top-level fracture;

所述的第三金属层包括位于第一象限外圈的第一Q路线段、由第四象限中圈经第三象限内圈延伸至第二象限内圈的第二Q路线段、由第一象限中圈延伸至第四象限外圈的第三Q路线段、由第二象限外圈延伸至第三象限中圈的第四Q路线段、由第二象限中圈经第一象限内圈延伸至第四象限内圈的第五Q路线段、以及位于第三象限外圈的第六Q路线段;其中第一Q路线段远离第一Q路输出引线的端部延伸出第一隔离引线,远离第一隔离引线的端部与第二Q路线段位于第四象限的端部之间形成第一底层断口;第五Q路线段位于第四象限的端部与第四Q路线段位于第三象限的端部之间形成第二底层断口,第四Q路线段位于第一象限的端部延伸出第二隔离引线;第六Q路线段远离第二隔离引线的端部延伸出第二Q路输出引线,远离第二Q路输出引线的端部与第五Q路线段位于第二象限的端部之间形成第三底层断口;第三Q路线段远离第一隔离引线的端部延伸出第一Q路输出引线,远离第一Q路输出引线的端部与第二Q路线段位于第二象限的端部之间形成第四底层断口;The third metal layer includes a first Q route segment located in the outer circle of the first quadrant, a second Q route segment extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant through the inner circle of the third quadrant, and a second Q route segment extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant. The third Q route segment extending from the middle quadrant circle to the outer circle of the fourth quadrant, the fourth Q route segment extending from the outer circle of the second quadrant to the middle circle of the third quadrant, and extending from the middle circle of the second quadrant through the inner circle of the first quadrant to the fifth Q route segment in the inner circle of the fourth quadrant, and the sixth Q route segment located in the outer circle of the third quadrant; wherein the first Q route segment extends away from the end of the first Q route output lead out of the first isolation lead, A first bottom layer fracture is formed between the end away from the first isolation lead and the end of the second Q route segment located in the fourth quadrant; the fifth Q route segment is located at the end of the fourth quadrant and the fourth Q route segment is located in the third A second bottom layer fracture is formed between the ends of the quadrants, the fourth Q route segment is located at the end of the first quadrant and a second isolation lead is extended; the end of the sixth Q route segment away from the end of the second isolation lead extends out of the second Q route The output lead, the end of the output lead away from the second Q route and the end of the fifth Q route segment located in the second quadrant form a third bottom layer fracture; the end of the third Q route segment away from the first isolation lead extends out of the first A Q-way output lead, a fourth bottom layer fracture is formed between the end of the first Q-way output lead and the end of the second Q-way segment located in the second quadrant;

所述的第四金属层包括用于接驳所述第一底层断口的第一底层跨线段,用于接驳所述第二底层断口的第二底层跨线段,用于接驳所述第三底层断口的第三底层跨线段,以及用于接驳所述第四底层断口的第四底层跨线段。The fourth metal layer includes a first bottom layer jumper segment for connecting to the first bottom layer fracture, a second bottom layer jumper segment for connecting to the second bottom layer fracture, and for connecting the third bottom layer. A third bottom layer spanning line segment of the bottom layer fracture, and a fourth bottom layer spanning line segment for connecting the fourth bottom layer fracture.

本发明所述一种基于小型正交信号产生器的Doherty功率放大器,其优点在于,采用工艺最上四层金属进行布局,将两个变压器通过合理布局成一个变压器的面积,降低了一半面积,同时增大了变压器的耦合系数,降低了损耗。信号通过磁耦合进行传递并实现输出相位正交。The Doherty power amplifier based on a small quadrature signal generator according to the present invention has the advantages of using the top four layers of metal for layout, and rationally arranging the two transformers into the area of one transformer, reducing the area by half, and at the same time The coupling coefficient of the transformer is increased and the loss is reduced. The signal is transferred through magnetic coupling and the output phase is quadrature.

附图说明Description of drawings

图1是本发明所述Doherty功率放大器的结构示意图;Fig. 1 is the structural representation of the Doherty power amplifier of the present invention;

图2是本发明所述正交信号产生器的结构立体图;Fig. 2 is the structural perspective view of the quadrature signal generator of the present invention;

图3是本发明所述正交信号产生器的结构正视图;Fig. 3 is the structural front view of the quadrature signal generator of the present invention;

图4是本发明所述正交信号产生器第一金属层的结构示意图;4 is a schematic structural diagram of the first metal layer of the quadrature signal generator according to the present invention;

图5是本发明所述正交信号产生器第二金属层的结构示意图;5 is a schematic structural diagram of the second metal layer of the quadrature signal generator according to the present invention;

图6是本发明所述正交信号产生器第三金属层的结构示意图;6 is a schematic structural diagram of the third metal layer of the quadrature signal generator according to the present invention;

图7是本发明所述正交信号产生器第四金属层的结构示意图;7 is a schematic structural diagram of the fourth metal layer of the quadrature signal generator according to the present invention;

图8是本发明所述正交信号产生器的等效电路图;8 is an equivalent circuit diagram of the quadrature signal generator of the present invention;

图9是本发明所述正交信号产生器的增益特性图;Fig. 9 is the gain characteristic diagram of the quadrature signal generator of the present invention;

图10是本发明所述正交信号产生器的相位特性图;10 is a phase characteristic diagram of the quadrature signal generator of the present invention;

图11是本发明所述正交信号产生器的小信号S参数仿真曲线图;11 is a small-signal S-parameter simulation graph of the quadrature signal generator according to the present invention;

图12是本发明所述正交信号产生器的大信号仿真曲线图;12 is a large-signal simulation graph of the quadrature signal generator of the present invention;

图13是本发明所述正交信号产生器的输出功率回退仿真曲线图;Fig. 13 is the output power backoff simulation curve diagram of the quadrature signal generator of the present invention;

图14是本发明所述正交信号产生器的蒙特卡洛仿真曲线图一;Fig. 14 is the Monte Carlo simulation curve diagram 1 of the quadrature signal generator of the present invention;

图15是本发明所述正交信号产生器的蒙特卡洛仿真曲线图二;Fig. 15 is the Monte Carlo simulation curve diagram 2 of the quadrature signal generator of the present invention;

图16是本发明所述正交信号产生器的蒙特卡洛仿真曲线图三。FIG. 16 is the third Monte Carlo simulation curve diagram of the quadrature signal generator according to the present invention.

附图标记:Reference number:

100-第一金属层:110-第一顶层跨线段、120-第二顶层跨线段、130-第三顶层跨线段、140-第四顶层跨线段;100-the first metal layer: 110-the first top layer spanning line segment, 120-the second top layer spanning line segment, 130-the third top layer spanning line segment, 140-the fourth top layer spanning line segment;

200-第二金属层:210-第一I路线段、211-第一I路输出引线、220-第二I路线段、230-第三I路线段、231-第一输入引线、240-第四I路线段、241-第二I路输出引线、250-第五I路线段、260-第六I路线段、261-第二输入引线;200-second metal layer: 210-first I route segment, 211-first I route output lead, 220-second I route segment, 230-third I route segment, 231-first input lead, 240-first I route segment Four I route sections, 241 - the second I route output lead, 250 - the fifth I route section, 260 - the sixth I route section, 261 - the second input lead;

300-第三金属层:310-第一Q路线段、311-第一隔离引线、320-第二Q路线段、330-第三Q路线段、331-第一Q路输出引线、340-第四Q路线段、341-第二隔离引线、350-第五Q路线段、360-第六Q路线段、361-第二Q路输出引线;300-Third metal layer: 310-First Q route segment, 311-First isolation lead, 320-Second Q route segment, 330-Third Q route segment, 331-First Q route output lead, 340-First Q route segment Four-Q line segment, 341-second isolation lead, 350-fifth Q-line segment, 360-sixth Q-line segment, 361-second Q-way output lead;

400-第四金属层:410-第一底层跨线段、420-第二底层跨线段、430-第三底层跨线段、140-第四底层跨线段;400 - the fourth metal layer: 410 - the first bottom layer spanning line segment, 420 - the second bottom layer spanning line segment, 430 - the third bottom layer spanning line segment, 140 - the fourth bottom layer spanning line segment;

IN-是第一输入端、IN+是第二输入端、THU-是第一I路输出端、THU+是第二I路输出端、CPL-是第一Q路输出端、CPL+是第二Q路输出端、ISO-是第一隔离端、ISO+是第二隔离端;IN- is the first input terminal, IN+ is the second input terminal, THU- is the first I-channel output terminal, THU+ is the second I-channel output terminal, CPL- is the first Q-channel output terminal, and CPL+ is the second Q-channel output terminal Output terminal, ISO- is the first isolation terminal, ISO+ is the second isolation terminal;

Cp是寄生电容、K是耦合系数、R是隔离电阻。Cp is the parasitic capacitance, K is the coupling coefficient, and R is the isolation resistance.

具体实施方式Detailed ways

如图1-7所示,本发明所述一种基于小型正交信号产生器的Doherty功率放大器,其正交信号产生器的I路差分信号经过主路放大后进入输出功率合成器的I路输入,而Q路差分信号经过辅路放大后进入Q路输入,所述输出功率合成器将放大后的I路差分信号和Q路差分信号合成并对外输出。As shown in Figures 1-7, a Doherty power amplifier based on a small quadrature signal generator according to the present invention, the I channel differential signal of the quadrature signal generator is amplified by the main circuit and then enters the I channel of the output power combiner The Q channel differential signal is amplified by the auxiliary circuit and then enters the Q channel input. The output power combiner synthesizes the amplified I channel differential signal and the Q channel differential signal and outputs it to the outside.

所述的正交信号产生器由上至下依次层叠的第一金属层100、第二金属层200、第三金属层300及第四金属层400组成,其中第一金属层100与第二金属层200电性连接、第二金属层200与第三金属层300绝缘连接、第三金属层300与第四金属层400电性连接:The quadrature signal generator is composed of a first metal layer 100 , a second metal layer 200 , a third metal layer 300 and a fourth metal layer 400 stacked in sequence from top to bottom, wherein the first metal layer 100 and the second metal layer 100 The layer 200 is electrically connected, the second metal layer 200 is electrically connected to the third metal layer 300, and the third metal layer 300 is electrically connected to the fourth metal layer 400:

所述第二金属层200形成环状结构的I路差分信号输出线路,且设有断口供同一平面中相交干涉的线段穿过。The second metal layer 200 forms an I-channel differential signal output circuit of a ring structure, and is provided with a fracture for the intersecting and interfering line segments in the same plane to pass through.

所述第三金属层300形成环状结构的Q路差分信号输出线路,且设有断口供同一平面中相交干涉的线段穿过。The third metal layer 300 forms a Q-channel differential signal output line of a ring structure, and is provided with a fracture for the intersecting and interfering line segments in the same plane to pass through.

所述第一金属层100设置多条跨线段用于一一对应地接驳第二金属层200各断口两端。The first metal layer 100 is provided with a plurality of spanning line segments for connecting two ends of each fracture of the second metal layer 200 in a one-to-one correspondence.

所述第四金属层400设置多条跨线段用于一一对应地接驳第三金属层300各断口两端。The fourth metal layer 400 is provided with a plurality of spanning line segments for connecting two ends of each fracture of the third metal layer 300 in a one-to-one correspondence.

第三金属层300的环状结构与第二金属层200的环状结构在垂直方向重合,以及第一金属层100各跨线段与第四金属层400的跨线段在垂直方向重合。The ring structure of the third metal layer 300 and the ring structure of the second metal layer 200 overlap in the vertical direction, and the cross-line segments of the first metal layer 100 and the cross-line segments of the fourth metal layer 400 are vertically overlapped.

所述的I路差分信号线路在正交信号产生器中部形成部分重叠。The I-channel differential signal lines are partially overlapped in the middle of the quadrature signal generator.

所述的I路差分信号线路为1.5圈的环状结构。The I-channel differential signal line is a 1.5-turn ring-shaped structure.

所述的第二金属层200包括位于第一象限外圈的第一I路线段210、由第四象限中圈经第三象限内圈延伸至第二象限内圈的第二I路线段220、由第一象限中圈延伸至第四象限外圈的第三I路线段230、由第二象限外圈延伸至第三象限中圈的第四I路线段240、由第二象限中圈经第一象限内圈延伸至第四象限内圈的第五I路线段250、以及位于第三象限外圈的第六I路线段260。其中第一I路线段210远离第一输入引线231的端部延伸出第一I路输出引线211,远离第一I路输出引线211的端部与第二I路线段220位于第四象限的端部之间形成第一顶层断口。第五I路线段250位于第四象限的端部与第四I路线段240位于第三象限的端部之间形成第二顶层断口,第四I路线段240位于第一象限的端部延伸出第二I路输出引线241。第六I路线段260远离第二I路输出引线241的端部延伸出第二输入引线261,远离第二输入引线261的端部与第五I路线段250位于第二象限的端部之间形成第三顶层断口。第三I路线段230远离第一I路输出引线211的端部延伸出第一输入引线231,远离第一输入引线231的端部与第二I路线段220位于第二象限的端部之间形成第四顶层断口。The second metal layer 200 includes a first I route segment 210 located in the outer circle of the first quadrant, a second I route segment 220 extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant through the inner circle of the third quadrant, The third I route segment 230 extending from the middle circle of the first quadrant to the outer circle of the fourth quadrant, the fourth I route segment 240 extending from the outer circle of the second quadrant to the middle circle of the third quadrant, from the middle circle of the second quadrant through the A fifth I-route segment 250 in the inner quadrant extends to the fourth inner quadrant, and a sixth I-route segment 260 in the outer third quadrant. The end of the first I route segment 210 away from the first input lead 231 extends out of the first I route output lead 211 , the end away from the first I route output lead 211 and the end of the second I route segment 220 located in the fourth quadrant A first top layer fracture is formed between the parts. A second top layer fracture is formed between the end of the fifth I route segment 250 located in the fourth quadrant and the end of the fourth I route segment 240 located in the third quadrant, and the fourth I route segment 240 located at the end of the first quadrant extends out The second I-channel output lead 241 . The end of the sixth I route segment 260 away from the second I route output lead 241 extends out of the second input lead 261, and the end away from the second input lead 261 and the end of the fifth I route segment 250 located in the second quadrant A third top layer fracture is formed. The end of the third I route segment 230 away from the first I route output lead 211 extends out of the first input lead 231 , and between the end away from the first input lead 231 and the end of the second I route segment 220 located in the second quadrant A fourth top layer fracture is formed.

所述的第一金属层100包括用于接驳所述第一顶层断口的第一顶层跨线段110,用于接驳所述第二顶层断口的第二顶层跨线段120,用于接驳所述第三顶层断口的第三顶层跨线段130,以及用于接驳所述第四顶层断口的第四顶层跨线段140。The first metal layer 100 includes a first top layer jumper 110 for connecting the first top layer fracture, and a second top layer jumper 120 for connecting the second top layer fracture, for connecting all the wires. The third top layer spanning line segment 130 of the third top layer fracture, and the fourth top layer spanning line segment 140 for connecting the fourth top layer break.

所述的第三金属层300包括位于第一象限外圈的第一Q路线段310、由第四象限中圈经第三象限内圈延伸至第二象限内圈的第二Q路线段320、由第一象限中圈延伸至第四象限外圈的第三Q路线段330、由第二象限外圈延伸至第三象限中圈的第四Q路线段340、由第二象限中圈经第一象限内圈延伸至第四象限内圈的第五Q路线段350、以及位于第三象限外圈的第六Q路线段360。其中第一Q路线段310远离第一Q路输出引线331的端部延伸出第一隔离引线311,远离第一隔离引线311的端部与第二Q路线段320位于第四象限的端部之间形成第一底层断口。第五Q路线段350位于第四象限的端部与第四Q路线段340位于第三象限的端部之间形成第二底层断口,第四Q路线段340位于第一象限的端部延伸出第二隔离引线341。第六Q路线段360远离第二隔离引线341的端部延伸出第二Q路输出引线361,远离第二Q路输出引线361的端部与第五Q路线段350位于第二象限的端部之间形成第三底层断口。第三Q路线段330远离第一隔离引线311的端部延伸出第一Q路输出引线331,远离第一Q路输出引线331的端部与第二Q路线段320位于第二象限的端部之间形成第四底层断口。The third metal layer 300 includes a first Q route segment 310 located in the outer circle of the first quadrant, a second Q route segment 320 extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant through the inner circle of the third quadrant, The third Q route segment 330 extending from the middle circle of the first quadrant to the outer circle of the fourth quadrant, the fourth Q route segment 340 extending from the outer circle of the second quadrant to the middle circle of the third quadrant, from the middle circle of the second quadrant through the An inner quadrant extends to a fifth Q-route segment 350 in the fourth quadrant inner circle, and a sixth Q-route segment 360 located in the third quadrant outer circle. The first isolation lead 311 extends from the end of the first Q route segment 310 away from the first Q route output lead 331 , and the end away from the first isolation lead 311 and the end of the second Q route segment 320 located in the fourth quadrant A first bottom layer fracture is formed between them. A second bottom layer fracture is formed between the end of the fifth Q-route segment 350 located in the fourth quadrant and the end of the fourth Q-route segment 340 located in the third quadrant, and the fourth Q-route segment 340 located at the end of the first quadrant extends out The second isolation lead 341 . The end of the sixth Q route segment 360 away from the second isolation lead 341 extends out of the second Q route output lead 361 , the end away from the second Q route output lead 361 and the end of the fifth Q route segment 350 located in the second quadrant A third bottom layer fracture is formed between them. The end of the third Q route segment 330 away from the first isolation lead 311 extends out of the first Q route output lead 331 , the end away from the first Q route output lead 331 and the end of the second Q route segment 320 located in the second quadrant A fourth bottom layer fracture is formed between them.

所述的第四金属层400包括用于接驳所述第一底层断口的第一底层跨线段410,用于接驳所述第二底层断口的第二底层跨线段420,用于接驳所述第三底层断口的第三底层跨线段430,以及用于接驳所述第四底层断口的第四底层跨线段440。The fourth metal layer 400 includes a first bottom layer jumper segment 410 for connecting the first bottom layer fracture, and a second bottom layer jumper line 420 for connecting the second bottom layer fracture, for connecting all the wires. The third bottom layer spanning line segment 430 of the third bottom layer fracture, and the fourth bottom layer spanning line segment 440 for connecting the fourth bottom layer fracture.

正交信号产生器的集总模型如图8所示,其中第二I路输出引线241等效为THU+,第一I路输出引线211等效为THU-,第二输入引线261等效为IN+,第一输入引线231等效为IN-,第二隔离引线341等效为ISO+,第一隔离引线311等效为ISO-,第二Q路输出引线361等效为CPL+,第一Q路输出引线331等效为CPL-。第二金属层200、第三金属层300以及对地之间形成等效的寄生电容Cp。第二金属层200与第三金属层300之间形成耦合系数为K的两个变压器,分别对应差分的Q路耦合。差分的输入信号在第二金属层200中对第三金属层300进行变压耦合,以实现差分的Q路对外输出。而在第二金属层200在实现差分的I路对外输出。利用金属走线的寄生电容Cp和实际的变压器进行谐振,从而不需要额外添加电容就能实现谐振,降低了功率损耗。针对传统Doherty功率放大器结构中的正交信号产生器面积大,损耗大的缺点,本发明通过将IQ两路变压器进行合理的版图布局,利用金属间上下磁耦合和侧边磁耦合相结合的方法,使之只占一个变压器的面积,实现了其小型化的目标。The lumped model of the quadrature signal generator is shown in Fig. 8, wherein the second I output lead 241 is equivalent to THU+, the first I output lead 211 is equivalent to THU-, and the second input lead 261 is equivalent to IN+ , the first input lead 231 is equivalent to IN-, the second isolation lead 341 is equivalent to ISO+, the first isolation lead 311 is equivalent to ISO-, the second Q output lead 361 is equivalent to CPL+, and the first Q output Lead 331 is equivalent to CPL-. An equivalent parasitic capacitance Cp is formed between the second metal layer 200 , the third metal layer 300 and the ground. Two transformers with a coupling coefficient of K are formed between the second metal layer 200 and the third metal layer 300 , respectively corresponding to the differential Q-channel coupling. The differential input signal is transformed and coupled to the third metal layer 300 in the second metal layer 200 to realize the external output of the differential Q channel. On the other hand, the second metal layer 200 implements the differential output of the I-channel externally. The parasitic capacitance Cp of the metal trace and the actual transformer are used for resonance, so that the resonance can be achieved without adding additional capacitance, and the power loss is reduced. Aiming at the shortcomings of the large area and large loss of the quadrature signal generator in the traditional Doherty power amplifier structure, the present invention uses the method of combining the upper and lower magnetic coupling between the metals and the side magnetic coupling by making a reasonable layout of the IQ two-way transformer. , so that it only occupies the area of one transformer and realizes its miniaturization goal.

在图9中可见,增益特性在28GHz仅有0.6dB的插入损耗,其中3dB是功率分离。而图10中可见,在20GHz-40GHz内,相位正交特性良好,有利于实现宽带应用。因此该正交信号产生器实现了良好的相位正交性。It can be seen in Figure 9 that the gain characteristic is only 0.6dB insertion loss at 28GHz, of which 3dB is the power separation. As can be seen in Figure 10, within 20GHz-40GHz, the phase quadrature characteristics are good, which is conducive to the realization of broadband applications. Therefore, the quadrature signal generator achieves good phase quadrature.

图11是本发明所述Doherty功率放大器的小信号S参数仿真结果,其显示在28GHz左右,小信号增益S21为18.7dB,其3dB带宽为26.02-29.05GHz。输入匹配S11在28GHz为-20.61dB。隔离度S12在28GHz小于-84.31dB。FIG. 11 is the small signal S-parameter simulation result of the Doherty power amplifier according to the present invention, which is displayed at about 28 GHz, the small signal gain S21 is 18.7 dB, and its 3 dB bandwidth is 26.02-29.05 GHz. Input matching S11 is -20.61dB at 28GHz. The isolation S12 is less than -84.31dB at 28GHz.

图12是本发明所述Doherty功率放大器的大信号仿真结果,其功率增益是22.1dB,功率增益抖动为0.86dB,饱和输出功率是23.3dBm,输出1dB压缩点是22.92dBm。12 is the large signal simulation result of the Doherty power amplifier according to the present invention, the power gain is 22.1dB, the power gain jitter is 0.86dB, the saturated output power is 23.3dBm, and the output 1dB compression point is 22.92dBm.

图13是本发明所述Doherty功率放大器的大信号输出功率回退仿真结果,其峰值功率附加效率是37.38%,6dB输出功率回退效率是24.5%,相比理想B类放大器,6dB功率回退效率提升了1.54倍。Figure 13 is the simulation result of the large-signal output power backoff of the Doherty power amplifier according to the present invention, the peak power added efficiency is 37.38%, and the 6dB output power backoff efficiency is 24.5%. Compared with the ideal class B amplifier, the 6dB power backoff is The efficiency is increased by 1.54 times.

通过蒙特卡洛仿真模拟,可以进一步验证了工艺角变化和不匹配所带来的影响。仿真100次的结果如图14-16所示,其显示了误差分布,与后仿真结果具有良好的一致性。证明本发明所述正交信号产生器具有小面积、低损耗等特点的同时,所述Doherty功率放大器在整体性能不变。The effects of process angle variations and mismatches can be further verified through Monte Carlo simulations. The results of 100 simulations are shown in Figure 14-16, which shows the error distribution, which is in good agreement with the post-simulation results. It is proved that the quadrature signal generator of the present invention has the characteristics of small area and low loss, while the overall performance of the Doherty power amplifier remains unchanged.

对于本领域的技术人员来说,可根据以上描述的技术方案以及构思,做出其它各种相应的改变以及形变,而所有的这些改变以及形变都应该属于本发明权利要求的保护范围之内。For those skilled in the art, various other corresponding changes and deformations can be made according to the technical solutions and concepts described above, and all these changes and deformations should fall within the protection scope of the claims of the present invention.

Claims (4)

1.一种基于小型正交信号产生器的Doherty功率放大器,其正交信号产生器的I路差分信号经过主路放大后进入输出功率合成器的I路输入,而Q路差分信号经过辅路放大后进入Q路输入,所述输出功率合成器将放大后的I路差分信号和Q路差分信号合成并对外输出;1. A Doherty power amplifier based on a small quadrature signal generator, the I-channel differential signal of the quadrature signal generator enters the I-channel input of the output power combiner after being amplified by the main circuit, and the Q-channel differential signal is amplified by the auxiliary circuit. After entering into the Q channel input, the output power combiner synthesizes the amplified I channel differential signal and the Q channel differential signal and outputs it externally; 其特征在于,It is characterized in that, 所述的正交信号产生器由上至下依次层叠的第一金属层(100)、第二金属层(200)、第三金属层(300)及第四金属层(400)组成,其中第一金属层(100)与第二金属层(200)电性连接、第二金属层(200)与第三金属层(300)绝缘连接、第三金属层(300)与第四金属层(400)电性连接:The quadrature signal generator is composed of a first metal layer (100), a second metal layer (200), a third metal layer (300) and a fourth metal layer (400) stacked in sequence from top to bottom, wherein the first metal layer (100) A metal layer (100) is electrically connected to the second metal layer (200), the second metal layer (200) is insulated and connected to the third metal layer (300), and the third metal layer (300) is connected to the fourth metal layer (400). ) electrical connection: 所述第二金属层(200)形成环状结构的I路差分信号输出线路,且设有断口供同一平面中相交干涉的线段穿过;The second metal layer (200) forms an I-channel differential signal output line of a ring structure, and is provided with a fracture for the intersecting and interfering line segments in the same plane to pass through; 所述第三金属层(300)形成环状结构的Q路差分信号输出线路,且设有断口供同一平面中相交干涉的线段穿过;The third metal layer (300) forms a Q-channel differential signal output line of a ring structure, and is provided with a fracture for the intersecting and interfering line segments in the same plane to pass through; 所述第一金属层(100)设置多条跨线段用于一一对应地接驳第二金属层(200)各断口两端;The first metal layer (100) is provided with a plurality of spanning line segments for connecting two ends of each fracture of the second metal layer (200) in a one-to-one correspondence; 所述第四金属层(400)设置多条跨线段用于一一对应地接驳第三金属层(300)各断口两端;The fourth metal layer (400) is provided with a plurality of spanning line segments for connecting two ends of each fracture of the third metal layer (300) in a one-to-one correspondence; 第三金属层(300)的环状结构与第二金属层(200)的环状结构在垂直方向重合,以及第一金属层(100)各跨线段与第四金属层(400)的跨线段在垂直方向重合。The annular structure of the third metal layer (300) and the annular structure of the second metal layer (200) overlap in the vertical direction, and each cross-line segment of the first metal layer (100) and the cross-line segment of the fourth metal layer (400) coincide in the vertical direction. 2.根据权利要求1所述一种基于小型正交信号产生器的Doherty功率放大器,其特征在于,所述的I路差分信号线路在正交信号产生器中部形成部分重叠。2 . The Doherty power amplifier based on a small quadrature signal generator according to claim 1 , wherein the I-channel differential signal lines form a partial overlap in the middle of the quadrature signal generator. 3 . 3.根据权利要求2所述一种基于小型正交信号产生器的Doherty功率放大器,其特征在于,所述的I路差分信号线路为1.5圈的环状结构。3 . The Doherty power amplifier based on a small quadrature signal generator according to claim 2 , wherein the I-channel differential signal line is a 1.5-turn ring-shaped structure. 4 . 4.根据权利要求3所述一种基于小型正交信号产生器的Doherty功率放大器,其特征在于,所述的第二金属层(200)包括位于第一象限外圈的第一I路线段(210)、由第四象限中圈经第三象限内圈延伸至第二象限内圈的第二I路线段(220)、由第一象限中圈延伸至第四象限外圈的第三I路线段(230)、由第二象限外圈延伸至第三象限中圈的第四I路线段(240)、由第二象限中圈经第一象限内圈延伸至第四象限内圈的第五I路线段(250)、以及位于第三象限外圈的第六I路线段(260);其中第一I路线段(210)远离第一输入引线(231)的端部延伸出第一I路输出引线(211),远离第一I路输出引线(211)的端部与第二I路线段(220)位于第四象限的端部之间形成第一顶层断口;第五I路线段(250)位于第四象限的端部与第四I路线段(240)位于第三象限的端部之间形成第二顶层断口,第四I路线段(240)位于第一象限的端部延伸出第二I路输出引线(241);第六I路线段(260)远离第二I路输出引线(241)的端部延伸出第二输入引线(261),远离第二输入引线(261)的端部与第五I路线段(250)位于第二象限的端部之间形成第三顶层断口;第三I路线段(230)远离第一I路输出引线(211)的端部延伸出第一输入引线(231),远离第一输入引线(231)的端部与第二I路线段(220)位于第二象限的端部之间形成第四顶层断口;4. The Doherty power amplifier based on a small quadrature signal generator according to claim 3, wherein the second metal layer (200) comprises a first I line segment ( 210), a second I route segment (220) extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant through the inner circle of the third quadrant, and the third I route extending from the middle circle of the first quadrant to the outer circle of the fourth quadrant segment (230), a fourth I route segment (240) extending from the outer circle of the second quadrant to the middle circle of the third quadrant, and a fifth route segment (240) extending from the middle circle of the second quadrant to the inner circle of the fourth quadrant through the inner circle of the first quadrant I route segment (250), and a sixth I route segment (260) located in the outer circle of the third quadrant; wherein the end of the first I route segment (210) away from the first input lead (231) extends out of the first I route The output lead (211) forms a first top layer fracture between the end of the output lead (211) away from the first I route and the end of the second I route segment (220) located in the fourth quadrant; the fifth I route segment (250) ) between the end of the fourth quadrant and the end of the fourth I route segment (240) located in the third quadrant to form a second top layer fracture, and the end of the fourth I route segment (240) located in the first quadrant extends out of the first Two I-channel output leads (241); the end of the sixth I-route segment (260) away from the second I-channel output lead (241) extends out of the second input lead (261), away from the end of the second input lead (261) A third top layer fracture is formed between the end of the fifth I route segment (250) located in the second quadrant; the third I route segment (230) extends away from the end of the first I route output lead (211) out of the first an input lead (231), a fourth top layer fracture is formed between the end away from the first input lead (231) and the end of the second I route segment (220) located in the second quadrant; 所述的第一金属层(100)包括用于接驳所述第一顶层断口的第一顶层跨线段(110),用于接驳所述第二顶层断口的第二顶层跨线段(120),用于接驳所述第三顶层断口的第三顶层跨线段(130),以及用于接驳所述第四顶层断口的第四顶层跨线段(140);The first metal layer (100) includes a first top layer spanning line segment (110) for connecting to the first top layer fracture, and a second top layer spanning line segment (120) for connecting the second top layer crack , a third top-level spanning line segment (130) for connecting the third top-level fracture, and a fourth top-level spanning line segment (140) for connecting the fourth top-level fracture; 所述的第三金属层(300)包括位于第一象限外圈的第一Q路线段(310)、由第四象限中圈经第三象限内圈延伸至第二象限内圈的第二Q路线段(320)、由第一象限中圈延伸至第四象限外圈的第三Q路线段(330)、由第二象限外圈延伸至第三象限中圈的第四Q路线段(340)、由第二象限中圈经第一象限内圈延伸至第四象限内圈的第五Q路线段(350)、以及位于第三象限外圈的第六Q路线段(360);其中第一Q路线段(310)远离第一Q路输出引线(331)的端部延伸出第一隔离引线(311),远离第一隔离引线(311)的端部与第二Q路线段(320)位于第四象限的端部之间形成第一底层断口;第五Q路线段(350)位于第四象限的端部与第四Q路线段(340)位于第三象限的端部之间形成第二底层断口,第四Q路线段(340)位于第一象限的端部延伸出第二隔离引线(341);第六Q路线段(360)远离第二隔离引线(341)的端部延伸出第二Q路输出引线(361),远离第二Q路输出引线(361)的端部与第五Q路线段(350)位于第二象限的端部之间形成第三底层断口;第三Q路线段(330)远离第一隔离引线(311)的端部延伸出第一Q路输出引线(331),远离第一Q路输出引线(331)的端部与第二Q路线段(320)位于第二象限的端部之间形成第四底层断口;The third metal layer (300) includes a first Q route segment (310) located in the outer circle of the first quadrant, and a second Q line segment (310) extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant through the inner circle of the third quadrant A route segment (320), a third Q route segment (330) extending from the first quadrant middle circle to the fourth quadrant outer circle, and a fourth Q route segment (340) extending from the second quadrant outer circle to the third quadrant middle circle ), a fifth Q route segment (350) extending from the middle circle of the second quadrant to the inner circle of the fourth quadrant through the inner circle of the first quadrant, and a sixth Q route segment (360) located in the outer circle of the third quadrant; A first isolation lead (311) extends from the end of a Q route segment (310) away from the first Q route output lead (331), and the end away from the first isolation lead (311) and the second Q route segment (320) The first bottom layer fracture is formed between the ends of the fourth quadrant; the fifth Q route segment (350) is located between the end of the fourth quadrant and the fourth Q route segment (340) is located between the ends of the third quadrant to form the first fracture. The second bottom layer is fractured, and the end of the fourth Q route segment (340) located in the first quadrant extends out of the second isolation lead (341); the sixth Q route segment (360) extends away from the end of the second isolation lead (341) A third bottom layer fracture is formed between the end of the second Q output lead (361) away from the second Q output lead (361) and the end of the fifth Q line segment (350) located in the second quadrant; the third Q The end of the route segment (330) away from the first isolation lead (311) extends out of the first Q output lead (331), and the end away from the first Q output lead (331) and the second Q route segment (320) A fourth bottom layer fracture is formed between the ends of the second quadrant; 所述的第四金属层(400)包括用于接驳所述第一底层断口的第一底层跨线段(410),用于接驳所述第二底层断口的第二底层跨线段(420),用于接驳所述第三底层断口的第三底层跨线段(430),以及用于接驳所述第四底层断口的第四底层跨线段(440)。The fourth metal layer (400) includes a first bottom layer spanning line segment (410) for connecting to the first bottom layer fracture, and a second bottom layer spanning line segment (420) for connecting the second bottom layer fracture , a third bottom layer spanning line segment (430) for connecting the third bottom layer fracture, and a fourth bottom layer spanning line segment (440) for connecting the fourth bottom layer fracture.
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