CN114501758B - A high flux X-ray source - Google Patents
A high flux X-ray source Download PDFInfo
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- CN114501758B CN114501758B CN202210024865.6A CN202210024865A CN114501758B CN 114501758 B CN114501758 B CN 114501758B CN 202210024865 A CN202210024865 A CN 202210024865A CN 114501758 B CN114501758 B CN 114501758B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
- H05G1/02—Constructional details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
- H05G1/02—Constructional details
- H05G1/025—Means for cooling the X-ray tube or the generator
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Abstract
The present invention relates to a high flux X-ray source. The device comprises an electron beam emission device, an electron focusing ring and a composite anode which are sequentially arranged from top to bottom, wherein the composite anode sequentially comprises an anode target, a diamond sheet and a substrate from top to bottom, and an electron beam emitted by the electron beam emission device passes through the electron focusing ring to reach the anode target of the composite anode. The invention can rapidly dissipate the high heat generated by the electron beam and prevent the high-temperature melting phenomenon of the anode caused by heat accumulation.
Description
Technical Field
The invention relates to the technical field of X-ray sources, in particular to a high-flux X-ray source.
Background
According to the current working principle of the X-ray source, the action process of high-energy electrons striking the anode is complex, wherein the conversion efficiency of exciting and generating X-rays is very low (about 1%), and most of the X-rays are converted into heat energy. In order to indirectly increase the flux of the emitted X-rays, the number of electrons emitted by the cathode of the X-ray source needs to be increased, so that the thermal performance of the anode is improved. Firstly, the increase of electron beam density in the unit area of the anode is indicated by the increase of electron beam density received by the anode, and the increase of electron beam density of the cathode of the X-ray source is the increase of tube current, and secondly, the heat generated by the high-density electron beam is high and concentrated in the focal area due to the limited focal size of the X-ray source, so that the requirements on the thermal performance of the anode are high, including the heat capacity and the heat conductivity coefficient of materials and the like.
The tube current of the X-ray source produced by the prior art is generally about 1-5 mA, and the tube current of the partial inlet high flux source is about 30-50 mA. It can be seen that the larger tube current can effectively increase the emergent X-ray flux, reduce the detection exposure time and improve the detection efficiency, but according to the emission mode of the current X-ray cathode, the emergent X-ray emission flux cannot be further improved, even if the tube current is improved, the current common anode cannot directly bear the heat of high heat flux density, so that the anode is destroyed.
Disclosure of Invention
The invention aims to provide a high-flux X-ray source which can rapidly dissipate heat generated by an electron beam and prevent high-temperature melting phenomenon of an anode caused by heat accumulation.
In order to achieve the above object, the present invention provides the following solutions:
The high-flux X-ray source comprises an electron beam emission device, an electron focusing ring and a composite anode which are sequentially arranged from top to bottom, wherein the composite anode sequentially comprises an anode target, a diamond sheet and a substrate from top to bottom, and an electron beam emitted by the electron beam emission device passes through the electron focusing ring to reach the anode target of the composite anode.
Optionally, the electron beam emission device comprises a cathode structure and an electron beam multiplication structure which are sequentially arranged from top to bottom, wherein the electron beam emitted by the cathode structure passes through the electron beam multiplication structure.
Optionally, the cathode structure comprises a cathode cover, a cathode, a first fixed electrode and a second fixed electrode, wherein the cathode is arranged inside the cathode cover, the first fixed electrode penetrates through the cathode cover to be connected with the cathode, and the second fixed electrode is connected with the cathode cover.
Optionally, the cathode structure further comprises a ceramic base fixed on the cathode cover, and the first fixed electrode penetrates through the ceramic base to be connected with the cathode.
Optionally, the electron beam multiplication structure comprises a third fixed electrode, a fourth fixed electrode, a first electrode ring, a microchannel plate and a second electrode ring which are sequentially arranged from top to bottom, wherein the first electrode ring is connected with the third fixed electrode, the fourth fixed electrode is connected with the second electrode ring, and an electron beam emitted by the cathode structure sequentially passes through the inner ring of the first electrode ring, the inner ring of the microchannel plate and the inner ring of the second electrode ring.
Optionally, the electron beam multiplication structure further comprises an insulating tabletting ring and a microchannel plate fixing sleeve, wherein the second electrode ring is arranged on the insulating tabletting ring, and the first electrode ring, the microchannel plate, the second electrode ring and the insulating tabletting ring are fixedly arranged in the microchannel plate fixing sleeve.
Optionally, the composite anode further comprises a solder, wherein the solder is arranged at the joint of the diamond sheet and the substrate, and the solder is used for connecting the diamond sheet and the substrate.
Optionally, a groove is formed in the upper surface of the substrate, and the diamond sheet is arranged in the groove.
Optionally, the anode target material is made of tungsten metal.
Optionally, the microchannel plate fixing sleeve is a hollow cylinder without a bottom surface, the top surface of the microchannel plate fixing sleeve is of a circular ring structure, and the electron beam emitted by the cathode structure sequentially passes through the inner ring of the top surface, the inner ring of the first electrode ring, the microchannel plate, the inner ring of the second electrode ring and the inner ring of the insulating tabletting ring.
According to the specific embodiment of the invention, the high-flux X-ray source comprises an electron beam emission device, an electron focusing ring and a composite anode which are sequentially arranged from top to bottom, wherein the composite anode sequentially comprises an anode target, a diamond sheet and a substrate from top to bottom, and the electron beam emitted by the electron beam emission device reaches the anode target of the composite anode through the electron focusing ring.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a side cross-sectional view of a high flux X-ray source provided by an embodiment of the present invention;
fig. 2 is a side sectional view of an electron beam emission device according to an embodiment of the present invention;
FIG. 3 is a front view of a cathode structure according to an embodiment of the present invention;
FIG. 4 is a bottom view of a cathode structure according to an embodiment of the present invention;
FIG. 5 is a bottom view of an electron beam multiplication structure according to an embodiment of the present invention;
FIG. 6 is a side cross-sectional view of an electron beam multiplication structure according to an embodiment of the present invention;
FIG. 7 is an enlarged view of a portion of a composite anode according to an embodiment of the present invention;
Fig. 8 is a schematic diagram of the general structure of a high-flux X-ray source provided by an embodiment of the present invention.
Symbol description:
I-high flux X-ray source, II-electron beam emission device, 1-quartz shell, 2-1-first fixed electrode, 2-2-second fixed electrode, 2-3-third fixed electrode, 2-4-fourth fixed electrode, 3-electron focusing ring, 4-composite anode, 5-high voltage connecting hole, 6-cathode structure, 7-electron beam multiplication structure, 8-cathode cover, 9-ceramic base, 10-cathode, 11-microchannel plate fixed sleeve, 12-insulating tabletting ring, 12-1-concave point, 13-1-first electrode ring, 13-2-second electrode ring, 14-microchannel plate, 15-anode target, 16-diamond sheet, 17-solder and 18-copper column.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1 and 8, the embodiment of the invention provides a high-flux X-ray source I, which comprises an electron beam emission device II, an electron focusing ring 3 and a composite anode 4 which are sequentially arranged from top to bottom, wherein the composite anode 4 comprises an anode target 15, a diamond sheet 16 and a substrate from top to bottom as shown in fig. 7, and an electron beam emitted by the electron beam emission device II reaches the anode target 15 of the composite anode 4 through the electron focusing ring 3.
As an alternative embodiment, the positions of the electron beam emitting device II, the electron focusing ring 3 and the composite anode 4, which are enclosed in the quartz envelope 1, are fixed and positioned by external electrodes.
As an alternative embodiment, as shown in fig. 2, the electron beam emission device II includes a cathode structure 6 and an electron beam multiplication structure 7 sequentially disposed from top to bottom, and the electron beam emitted by the cathode structure 6 passes through the electron beam multiplication structure 7.
As an alternative embodiment, as shown in fig. 3 and 4, the cathode structure 6 includes a cathode cover 8, a cathode 10, a first fixed electrode 2-1 and a second fixed electrode 2-2, the cathode 10 is disposed inside the cathode cover 8, the first fixed electrode 2-1 is connected with the cathode 10 through the cathode cover 8, the second fixed electrode 2-2 is connected with the cathode cover 8, and the first fixed electrode 2-1 and the second fixed electrode 2-2 penetrate through the quartz casing 1 to be externally connected with a power supply.
As an alternative embodiment, the cathode structure 6 further comprises a ceramic base 9 fixed on the cathode cover 8, the first fixed electrode 2-1 passes through the ceramic base 9 and is connected with the cathode 10, as shown in fig. 3, specifically, the first fixed electrode 2-1 passes through the quartz casing 1 and the ceramic base 9 of the X-ray source and is connected with the ceramic base 9 to form a whole, the ceramic base 9 is arranged inside the cathode cover 8 and is connected with the cathode cover 8 by pins, the cathode 10 is arranged below the ceramic base 9, and the second fixed electrode 2-2 passes through the quartz casing 1 of the X-ray source package and is welded with the cathode cover 8 to form a whole.
As an alternative embodiment, the cathode 10 is a solenoid structure having a certain length, and the head and tail ends are extended by a certain length and connected to the first fixed electrode 2-1 by pressing.
As an alternative embodiment, as shown in FIGS. 5 and 6, the electron beam multiplication structure 7 comprises a third fixed electrode 2-3, a fourth fixed electrode 2-4, and a first electrode ring 13-1, a microchannel plate 14 and a second electrode ring 13-2 which are sequentially arranged from top to bottom, wherein the first electrode ring 13-1 is connected with the third fixed electrode 2-3, the fourth fixed electrode 2-4 is connected with the second electrode ring 13-2, and the electron beam emitted by the cathode structure 6 sequentially passes through the inner ring of the first electrode ring 13-1, the microchannel plate 14 and the inner ring of the second electrode ring 13-2, and the third fixed electrode 2-3 and the fourth fixed electrode 2-4 penetrate through the quartz casing 1 to be externally connected with a power supply.
As an alternative embodiment, the electron beam multiplication structure 7 further comprises an insulating tabletting ring 12 and a microchannel plate fixing sleeve 11, wherein the second electrode ring 13-2 is arranged on the insulating tabletting ring 12, and the first electrode ring 13-1, the microchannel plate 14, the second electrode ring 13-2 and the insulating tabletting ring 12 are fixedly arranged in the microchannel plate fixing sleeve 11. Specifically, as shown in fig. 5 and 6, the electron beam multiplication structure 7 includes a microchannel plate fixing sleeve 11, an insulating sheet disposed inside the microchannel plate fixing sleeve 11, a second electrode ring 13-2 disposed inside the microchannel plate fixing sleeve 11 and above the insulating sheet ring 12, a microchannel plate 14 disposed inside the microchannel plate fixing sleeve 11 and above the second electrode ring 13-2, a first electrode ring 13-1 disposed inside the microchannel plate fixing sleeve 11 and above the microchannel plate 14, a third fixed electrode 2-3 passing through the microchannel plate fixing sleeve 11 and contacting the first electrode ring 13-1, and a fourth electrode ring 2-4 contacting the second electrode ring 13-2, the microchannel plate 14 being fixed by the first electrode ring 13-1, the second electrode ring 13-2, the first electrode ring 13-1 and the second electrode ring 13-2 simultaneously providing voltages to the microchannel plate 14, the insulating sheet ring 12 being rotationally compressed by means of a recess 12-1, the first electrode ring 13-1, the second electrode ring 13-2 and the second electrode ring 13-2 being integrally formed with the first electrode ring 13-1 and the second electrode ring 13-2, the microchannel plate 13-2 being fixed to the microchannel plate fixing sleeve 11.
As an alternative implementation mode, the electronic focusing ring 3 is a copper metal ring with a certain thickness, the fifth fixed electrode 2-5 penetrates through the quartz shell 1 of the X-ray source package to be connected with the electronic focusing ring 3 to form a whole, and the fifth fixed electrode 2-5 is externally connected with a power supply system to supply voltage to the electronic focusing ring 3. Through external power supply, the electron focusing ring 3, the first electrode ring 13-1, the second electrode ring 13-2 and the composite anode 4 can form an electron lens structure, the voltage value applied by the first electrode ring 13-1 and the second electrode ring 13-2 is V1, the voltage value applied by the electron focusing ring 3 is V2, the voltage value applied by the composite anode 4 is V3, wherein the V2 value is smaller than V1 and V3, and thus an electrostatic field area with low potential and adjustable can be formed at the position below the transmitting end of the high-flux electron beam transmitting structure and above the composite anode 4 and is used for converging secondary transmitted electron beams to a focus area range appointed by the surface of the anode target 15.
As an alternative embodiment, as shown in fig. 7, the composite anode 4 further comprises a solder 17, wherein the solder 17 is disposed at the connection between the diamond sheet 16 and the substrate, and the solder 17 is used for connecting the diamond sheet 16 and the substrate.
As an alternative embodiment, the upper surface of the substrate is provided with grooves, in which the diamond sheet 16 is arranged, which grooves may be circular grooves.
As an alternative implementation mode, the substrate is a copper column 18, the upper surface is of a wedge-shaped structure, the inclination angle is 10-20 degrees, the substrate is encapsulated in a quartz shell 1 encapsulated by an X-ray source, the lower surface of the substrate is a power supply end and is used for fixing and supplying power at high voltage, the substrate passes through the quartz shell 1 encapsulated by the X-ray source and is connected with an external power supply electrode through a high-voltage connecting hole 5 arranged in the substrate, a diamond sheet 16 is inlaid in a groove of the copper column, after the diamond sheet and the copper column are integrally coated with films by adopting an anode target, and the anode target is attached to the upper surfaces of the diamond sheet and the substrate to form a film with the thickness of micrometer level.
As an alternative embodiment, the anode target 15 is made of tungsten metal.
As an alternative implementation manner, the microchannel plate fixing sleeve 11 is a hollow cylinder without a bottom surface, the top surface of the microchannel plate fixing sleeve 11 is of a circular ring structure, and the electron beam emitted by the cathode structure 6 sequentially passes through the inner ring of the top surface, the inner ring of the first electrode ring 13-1, the inner ring of the microchannel plate 14, the inner ring of the second electrode ring 13-2 and the inner ring of the insulating tabletting ring 12.
The invention has the following technical effects:
the invention relates to a source with higher X-ray emission flux, which is mainly applied to an environment with high requirement on X-ray flux in an X-ray detection system.
The invention multiplies the quantity of electrons emitted by the cathode for multiple times by utilizing the secondary multiplication effect of the microchannel plate, thereby improving the efficiency of the electrons exciting the anode to generate X rays in unit time in probability and indirectly improving the flux of the emitted X rays. Meanwhile, the adopted composite anode has high heat conductivity and heat load capacity, can rapidly dissipate heat of high heat generated by electron beams, and prevents high Wen Ronghui phenomenon caused by heat accumulation.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, which are intended to facilitate an understanding of the principles and concepts of the invention and are to be varied in scope and detail by persons of ordinary skill in the art based on the teachings herein. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (1)
1. The high-flux X-ray source is characterized by comprising an electron beam emission device, an electron focusing ring and a composite anode which are sequentially arranged from top to bottom, wherein the composite anode sequentially comprises an anode target, a diamond sheet and a substrate from top to bottom;
The electron beam emission device, the electron focusing ring and the composite anode are packaged in the quartz shell, and the positions of the three devices are fixed and positioned through the external electrode;
The electron beam emission device comprises a cathode structure and an electron beam multiplication structure which are sequentially arranged from top to bottom, wherein an electron beam emitted by the cathode structure passes through the electron beam multiplication structure;
The cathode structure comprises a cathode cover, a cathode, a first fixed electrode and a second fixed electrode, wherein the cathode is arranged in the cathode cover, and the first fixed electrode passes through the cathode cover to be connected with the cathode;
The cathode structure also comprises a ceramic base fixed on the cathode cover, wherein the first fixed electrode passes through the ceramic base and is connected with the cathode, specifically, the first fixed electrode passes through a quartz shell of the X-ray source and the ceramic base and is connected with the ceramic base to form a whole, the ceramic base is arranged inside the cathode cover and is connected with a cathode cover pin to form a whole, the cathode is arranged below the ceramic base, and the second fixed electrode passes through the quartz shell packaged by the X-ray source and is welded with the cathode cover to form a whole;
the cathode is of a solenoid structure with a certain length, the head end and the tail end are prolonged by a certain length, and the cathode is connected with the first fixed electrode in a pressing mode;
The electron beam multiplication structure comprises a third fixed electrode, a fourth fixed electrode and a first electrode ring, a microchannel plate and a second electrode ring which are sequentially arranged from top to bottom, wherein the first electrode ring is connected with the third fixed electrode, the fourth fixed electrode is connected with the second electrode ring, the electron beam emitted by the cathode structure sequentially passes through the inner ring of the first electrode ring, the microchannel plate and the inner ring of the second electrode ring, and the third fixed electrode and the fourth fixed electrode penetrate through a quartz shell to be externally connected with a power supply;
The electron beam multiplication structure also comprises an insulating tabletting ring and a microchannel plate fixing sleeve; the electron beam multiplication structure comprises a microchannel plate fixing sleeve, an insulating sheet arranged in the microchannel plate fixing sleeve, a second electrode ring arranged in the microchannel plate fixing sleeve and positioned above the insulating sheet ring, a microchannel plate arranged in the microchannel plate fixing sleeve and positioned above the second electrode ring, a first electrode ring arranged in the microchannel plate fixing sleeve, a third fixing electrode penetrating through the microchannel plate fixing sleeve and contacting the first electrode ring and a fourth electrode ring contacting the second electrode ring, wherein the microchannel plate is fixed by the first electrode ring and the second electrode ring, the first electrode ring and the second electrode ring simultaneously provide voltages for the microchannel plate, the insulating sheet ring is fixed in the microchannel plate fixing sleeve by utilizing the rotation compaction of a concave point, the first electrode ring, the second electrode ring and the microchannel plate are fixed in the microchannel plate fixing sleeve, the first electrode ring and the second electrode ring are integrally contacted with the first electrode ring and the second electrode ring, and the first electrode ring and the second electrode ring are integrally contacted;
The electronic focusing ring is a copper metal ring with a certain thickness, the fifth fixed electrode passes through the quartz shell packaged by the X-ray source and is connected with the electronic focusing ring to form a whole, and the fifth fixed electrode is externally connected with a power supply system to provide voltage for the electronic focusing ring; the electron focusing ring, the first electrode ring, the second electrode ring and the composite anode form an electron lens structure through external power supply, the voltage value applied by the first electrode ring and the second electrode ring is V1, the voltage value applied by the electron focusing ring is V2, the voltage value applied by the composite anode is V3, wherein the V2 value is smaller than V1 and V3, and thus an electrostatic field area with low potential and adjustable is formed at the position below the transmitting end of the high-flux electron beam transmitting structure and the position above the composite anode and is used for converging secondary transmitted electron beams to a focus area range appointed by the surface of an anode target;
the composite anode also comprises a solder, wherein the solder is arranged at the joint of the diamond sheet and the substrate and is used for connecting the diamond sheet and the substrate;
the upper surface of the substrate is provided with a groove, the diamond sheet is arranged in the groove, and the groove is a circular groove;
The substrate is a copper column, the upper surface is of a wedge-shaped structure, the inclination angle is 10-20 degrees, the substrate is encapsulated in a quartz shell encapsulated by an X-ray source, the lower surface of the substrate is a power supply end and used for fixing and supplying power at high voltage, the substrate passes through the quartz shell encapsulated by the X-ray source and is connected with an external power supply electrode through a high-voltage connecting hole arranged in the substrate, a diamond sheet is inlaid in a groove of the copper column, the anode target is used for coating the surfaces of the diamond sheet and the copper column, and the anode target is attached to the upper surfaces of the diamond sheet and the substrate to form a film with the thickness of micrometer level;
the anode target is made of tungsten metal;
the micro-channel plate fixing sleeve is a hollow cylinder without a bottom surface, the top surface of the micro-channel plate fixing sleeve is of a circular ring structure, and electron beams emitted by the cathode structure sequentially pass through an inner ring of the top surface, an inner ring of the first electrode ring, the micro-channel plate, an inner ring of the second electrode ring and an inner ring of the insulating tabletting ring;
The electron emission efficiency of the cathode is increased in unit time by utilizing the secondary multiplication effect of the microchannel plate, the X-ray emission efficiency of the electron excitation anode in unit time is increased in probability, and the X-ray emission flux is indirectly increased.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210024865.6A CN114501758B (en) | 2022-01-11 | 2022-01-11 | A high flux X-ray source |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210024865.6A CN114501758B (en) | 2022-01-11 | 2022-01-11 | A high flux X-ray source |
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| CN114501758A CN114501758A (en) | 2022-05-13 |
| CN114501758B true CN114501758B (en) | 2025-03-25 |
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| CN202210024865.6A Active CN114501758B (en) | 2022-01-11 | 2022-01-11 | A high flux X-ray source |
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| CN115440553B (en) * | 2022-09-21 | 2023-07-04 | 无锡日联科技股份有限公司 | Control system and method for micro-focus X-ray source |
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| JP2009212058A (en) * | 2008-03-06 | 2009-09-17 | Rigaku Corp | X-ray generator, x-ray analysis device, x-ray transmission image measurement device, and x-ray interferometer |
| JP2011181336A (en) * | 2010-03-01 | 2011-09-15 | Hamamatsu Photonics Kk | Microchannel plate assembly |
| CN102420088A (en) * | 2011-12-05 | 2012-04-18 | 李驰 | Back grid type grid-controllable cold cathode X-ray tube |
| CN106960775A (en) * | 2017-02-14 | 2017-07-18 | 南京航空航天大学 | A kind of Laser Modulation Pulsed Xray source communicated for space X ray |
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| FR2334194A1 (en) * | 1975-12-05 | 1977-07-01 | Cgr Mev | Short impulse electron gun for particle accelerator - has pulsed light beam falling on photocathode providing electrons to electron multiplier |
| US5099128A (en) * | 1989-03-17 | 1992-03-24 | Roger Stettner | High resolution position sensitive detector |
| EP0432568A3 (en) * | 1989-12-11 | 1991-08-28 | General Electric Company | X ray tube anode and tube having same |
| JPH10283979A (en) * | 1997-04-10 | 1998-10-23 | Hamamatsu Photonics Kk | Electron detector |
| US20020191746A1 (en) * | 2001-06-19 | 2002-12-19 | Mark Dinsmore | X-ray source for materials analysis systems |
| CN105702544A (en) * | 2016-01-21 | 2016-06-22 | 中国电子科技集团公司第三十八研究所 | Diamond ray target, preparation method and application |
| KR102389448B1 (en) * | 2017-08-16 | 2022-04-22 | (주) 브이에스아이 | X-ray tube having a micro channel plate |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009212058A (en) * | 2008-03-06 | 2009-09-17 | Rigaku Corp | X-ray generator, x-ray analysis device, x-ray transmission image measurement device, and x-ray interferometer |
| JP2011181336A (en) * | 2010-03-01 | 2011-09-15 | Hamamatsu Photonics Kk | Microchannel plate assembly |
| CN102420088A (en) * | 2011-12-05 | 2012-04-18 | 李驰 | Back grid type grid-controllable cold cathode X-ray tube |
| CN106960775A (en) * | 2017-02-14 | 2017-07-18 | 南京航空航天大学 | A kind of Laser Modulation Pulsed Xray source communicated for space X ray |
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